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TPSMB6.8A1BHE3/5BT TPSMB6.8A1BHE3/5BT Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 5.8VWM 10.5V DO214AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 10.5V
Voltage - Breakdown (Min): 6.45V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 5.8V
Current - Peak Pulse (10/1000µs): 57.1A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
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TPSMB6.8A82HE3/5BT TPSMB6.8A82HE3/5BT Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 5.8VWM 10.5V DO214AA
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 10.5V
Voltage - Breakdown (Min): 6.45V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 5.8V
Current - Peak Pulse (10/1000µs): 57.1A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
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TPSMC36A-4HE3_A/I Vishay General Semiconductor - Diodes Division TPSMC6.8%20-%20TPSMC47A.pdf Description: TVS DIODE 30.8VWM DO214AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 30.1A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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SS2PH10HM3_A/H SS2PH10HM3_A/H Vishay General Semiconductor - Diodes Division ss2ph9.pdf Description: DIODE SCHOTTKY 100V 2A DO220AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
3000+9.59 грн
6000+8.35 грн
9000+7.91 грн
15000+7.28 грн
21000+7.26 грн
30000+7.14 грн
Мінімальне замовлення: 3000 шт
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SS8PH10HM3_A/H SS8PH10HM3_A/H Vishay General Semiconductor - Diodes Division ss8ph10.pdf Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
1500+14.24 грн
3000+12.80 грн
Мінімальне замовлення: 1500 шт
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SS2PH10HM3_A/H SS2PH10HM3_A/H Vishay General Semiconductor - Diodes Division ss2ph9.pdf Description: DIODE SCHOTTKY 100V 2A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
на замовлення 39546 шт:
термін постачання 21-31 дні (днів)
10+33.78 грн
14+22.09 грн
100+13.18 грн
500+11.32 грн
1000+10.59 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
SS8PH10HM3_A/H SS8PH10HM3_A/H Vishay General Semiconductor - Diodes Division ss8ph10.pdf Description: DIODE SCHOTTKY 100V 8A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 6669 шт:
термін постачання 21-31 дні (днів)
12+28.28 грн
16+19.37 грн
Мінімальне замовлення: 12 шт
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BAV19W-E3-08 BAV19W-E3-08 Vishay General Semiconductor - Diodes Division BAV19W_20W_21W_Rev1.6_2-18-23.pdf Description: DIODE STANDARD 100V 250MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
на замовлення 14291 шт:
термін постачання 21-31 дні (днів)
31+10.21 грн
50+6.05 грн
100+5.89 грн
500+4.26 грн
1000+3.77 грн
Мінімальне замовлення: 31 шт
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BZX384C15-E3-08 BZX384C15-E3-08 Vishay General Semiconductor - Diodes Division PdfFile_148489.pdf Description: DIODE ZENER 15V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
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BZX384C5V6-E3-08 BZX384C5V6-E3-08 Vishay General Semiconductor - Diodes Division PdfFile_148489.pdf Description: DIODE ZENER 5.6V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
на замовлення 4743 шт:
термін постачання 21-31 дні (днів)
13+24.35 грн
22+14.37 грн
100+9.05 грн
500+6.30 грн
1000+5.59 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
MMSZ5245C-E3-08 MMSZ5245C-E3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 15V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Cut Tape (CT)
на замовлення 3134 шт:
термін постачання 21-31 дні (днів)
27+11.78 грн
39+7.79 грн
100+3.63 грн
500+3.38 грн
1000+3.35 грн
Мінімальне замовлення: 27 шт
В кошику  од. на суму  грн.
VTVS11GSMF-HM3-08 VTVS11GSMF-HM3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 11.2V 18V DO219AB
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VTVS15GSMF-HM3-08 VTVS15GSMF-HM3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 15.1VWM 25VC DO219AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 25V
Voltage - Breakdown (Min): 17.6V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 15.1V
Current - Peak Pulse (10/1000µs): 15.89A
Capacitance @ Frequency: 684pF @ 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
на замовлення 2270 шт:
термін постачання 21-31 дні (днів)
5+73.06 грн
10+43.80 грн
100+28.56 грн
500+20.64 грн
1000+18.65 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
VTVS28ASMF-HM3-08 VTVS28ASMF-HM3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 27.9VWM 47VC DO219AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 47V
Voltage - Breakdown (Min): 31.4V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 27.9V
Current - Peak Pulse (10/1000µs): 8.21A
Capacitance @ Frequency: 412pF @ 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
на замовлення 25862 шт:
термін постачання 21-31 дні (днів)
14+22.78 грн
19+16.72 грн
100+10.05 грн
500+8.71 грн
1000+6.88 грн
Мінімальне замовлення: 14 шт
В кошику  од. на суму  грн.
VTVS33ASMF-M3-08 VTVS33ASMF-M3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 33.3VWM 55VC DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 379pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.91A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 55V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 25711 шт:
термін постачання 21-31 дні (днів)
29+11.00 грн
38+8.02 грн
100+7.79 грн
500+7.13 грн
1000+6.35 грн
Мінімальне замовлення: 29 шт
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VTVS43ASMF-HM3-08 VTVS43ASMF-HM3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 43.2VWM 73VC DO219AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 73V
Voltage - Breakdown (Min): 48.5V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 43.2V
Current - Peak Pulse (10/1000µs): 5.23A
Capacitance @ Frequency: 292pF @ 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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VTVS47GSMF-M3-08 VTVS47GSMF-M3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 46.8VWM 80VC DO219AB
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 80V
Voltage - Breakdown (Min): 54.88V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 46.8V
Current - Peak Pulse (10/1000µs): 4.9A
Capacitance @ Frequency: 293pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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VTVS5V0ASMF-HM3-08 VTVS5V0ASMF-HM3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 5VWM 8.9VC DO219AB
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 42.95A
Capacitance @ Frequency: 2095pF @ 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 8.9V
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
на замовлення 33601 шт:
термін постачання 21-31 дні (днів)
10+31.42 грн
17+18.00 грн
100+13.19 грн
500+11.20 грн
1000+8.45 грн
Мінімальне замовлення: 10 шт
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VTVS9V4GSMF-M3-08 VTVS9V4GSMF-M3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 9.4VWM 14.9VC DO219AB
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2KBP02M-E4/72 2KBP02M-E4/72 Vishay General Semiconductor - Diodes Division 2KBP005M-10M-E4,_3N253-259-E4_Rev_Apr_2017.pdf Description: BRIDGE RECT 1PHASE 200V 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
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2KBP02ML-5301E4/72 2KBP02ML-5301E4/72 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 200V 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
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2KBP02ML-6192E4/72 2KBP02ML-6192E4/72 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 200V 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
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2KBP04M-E4/72 2KBP04M-E4/72 Vishay General Semiconductor - Diodes Division 2KBP005M-10M-E4,_3N253-259-E4_Rev_Apr_2017.pdf Description: BRIDGE RECT 1PHASE 400V 2A KBPM
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2KBP04ML-6212E4/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 400V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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2KBP04ML-6212E4/72 2KBP04ML-6212E4/72 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 400V 2A KBPM
Packaging: Box
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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2KBP04ML-6422E4/51 2KBP04ML-6422E4/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 400V 2A KBPM
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2KBP04ML-6422E4/72 2KBP04ML-6422E4/72 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 400V 2A KBPM
Packaging: Box
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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2KBP04ML-6533E4/72 2KBP04ML-6533E4/72 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 400V 2A KBPM
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2KBP06M-E4/72 2KBP06M-E4/72 Vishay General Semiconductor - Diodes Division 2KBP005M-10M-E4%2C_3N253-259-E4_Rev_Apr_2017.pdf Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Packaging: Box
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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2KBP06ML-36E4/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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2KBP06ML-5301E4/51 2KBP06ML-5301E4/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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2KBP06ML-5301E4/72 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Packaging: Box
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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2KBP06ML-5303E4/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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2KBP06ML-6145E4/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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2KBP06ML-6145E4/72 2KBP06ML-6145E4/72 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
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2KBP06ML-6420E4/72 2KBP06ML-6420E4/72 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
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2KBP06ML-6762E4/72 2KBP06ML-6762E4/72 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
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2KBP08M-23E4/51 2KBP08M-23E4/51 Vishay General Semiconductor - Diodes Division 2KBP005M-10M-E4%2C_3N253-259-E4_Rev_Apr_2017.pdf Description: BRIDGE RECT 1PHASE 800V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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2KBP08M-E4/72 2KBP08M-E4/72 Vishay General Semiconductor - Diodes Division 2KBP005M-10M-E4%2C_3N253-259-E4_Rev_Apr_2017.pdf Description: BRIDGE RECT 1PHASE 800V 2A KBPM
Packaging: Box
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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2KBP08ML-24E4/51 2KBP08ML-24E4/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 800V 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Tray
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2KBP08ML-6581E4/72 2KBP08ML-6581E4/72 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 800V 2A KBPM
Packaging: Box
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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2KBP08ML-7001E4/72 2KBP08ML-7001E4/72 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 800V 2A KBPM
Packaging: Box
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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2KBP10M-28E4/51 2KBP10M-28E4/51 Vishay General Semiconductor - Diodes Division 2KBP005M-10M-E4,_3N253-259-E4_Rev_Apr_2017.pdf Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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2KBP10M-E4/72 2KBP10M-E4/72 Vishay General Semiconductor - Diodes Division 2KBP005M-10M-E4,_3N253-259-E4_Rev_Apr_2017.pdf Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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2KBP10ML-001E4/51 2KBP10ML-001E4/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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2KBP10ML-5/22 2KBP10ML-5/22 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Bulk
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2KBP10ML-5E4/51 2KBP10ML-5E4/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Tray
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2KBP10ML-5E4/72 2KBP10ML-5E4/72 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
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2KBP10ML-6767E4/51 2KBP10ML-6767E4/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Tray
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2KBP10ML-6767E4/72 2KBP10ML-6767E4/72 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
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2KBP10ML-7001E4/51 2KBP10ML-7001E4/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
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3KBP02M-E4/72 3KBP02M-E4/72 Vishay General Semiconductor - Diodes Division 3KBP005%2C01%2C02%2C04%2C06%2C08M.pdf Description: BRIDGE RECT 1PHASE 200V 3A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
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3KBP04M-E4/72 3KBP04M-E4/72 Vishay General Semiconductor - Diodes Division 3KBP005,01,02,04,06,08M.pdf Description: BRIDGE RECT 1PHASE 400V 3A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 400 V
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
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3KBP06M-E4/72 3KBP06M-E4/72 Vishay General Semiconductor - Diodes Division 3KBP005%2C01%2C02%2C04%2C06%2C08M.pdf Description: BRIDGE RECT 1PHASE 600V 3A KBPM
Packaging: Box
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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3KBP08M-01E4/P 3KBP08M-01E4/P Vishay General Semiconductor - Diodes Division 3KBP005,01,02,04,06,08M.pdf Description: BRIDGE RECT 1PHASE 800V 3A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Bulk
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3KBP08M-E4/72 3KBP08M-E4/72 Vishay General Semiconductor - Diodes Division 3KBP005%2C01%2C02%2C04%2C06%2C08M.pdf Description: BRIDGE RECT 1PHASE 800V 3A KBPM
Packaging: Box
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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3N257-5410E4/51 3N257-5410E4/51 Vishay General Semiconductor - Diodes Division 2KBP005M-10M-E4,_3N253-259-E4_Rev_Apr_2017.pdf Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Tray
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3N257-E4/72 3N257-E4/72 Vishay General Semiconductor - Diodes Division 2KBP005M-10M-E4%2C_3N253-259-E4_Rev_Apr_2017.pdf Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
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3N258-E4/72 3N258-E4/72 Vishay General Semiconductor - Diodes Division 2KBP005M-10M-E4,_3N253-259-E4_Rev_Apr_2017.pdf Description: BRIDGE RECT 1PHASE 800V 2A KBPM
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KBP02M-61E4/51 KBP02M-61E4/51 Vishay General Semiconductor - Diodes Division KBP005M_thru_10M,%203N246_thru_52.pdf Description: BRIDGE RECT 1P 200V 1.5A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.57 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Tray
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TPSMB6.8A1BHE3/5BT tpsmb.pdf
TPSMB6.8A1BHE3/5BT
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.8VWM 10.5V DO214AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 10.5V
Voltage - Breakdown (Min): 6.45V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 5.8V
Current - Peak Pulse (10/1000µs): 57.1A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
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TPSMB6.8A82HE3/5BT tpsmb.pdf
TPSMB6.8A82HE3/5BT
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.8VWM 10.5V DO214AA
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 10.5V
Voltage - Breakdown (Min): 6.45V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 5.8V
Current - Peak Pulse (10/1000µs): 57.1A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
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TPSMC36A-4HE3_A/I TPSMC6.8%20-%20TPSMC47A.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30.8VWM DO214AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 30.1A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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SS2PH10HM3_A/H ss2ph9.pdf
SS2PH10HM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A DO220AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3000+9.59 грн
6000+8.35 грн
9000+7.91 грн
15000+7.28 грн
21000+7.26 грн
30000+7.14 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SS8PH10HM3_A/H ss8ph10.pdf
SS8PH10HM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
1500+14.24 грн
3000+12.80 грн
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
SS2PH10HM3_A/H ss2ph9.pdf
SS2PH10HM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
на замовлення 39546 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
10+33.78 грн
14+22.09 грн
100+13.18 грн
500+11.32 грн
1000+10.59 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
SS8PH10HM3_A/H ss8ph10.pdf
SS8PH10HM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 6669 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
12+28.28 грн
16+19.37 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
BAV19W-E3-08 BAV19W_20W_21W_Rev1.6_2-18-23.pdf
BAV19W-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 250MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
на замовлення 14291 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
31+10.21 грн
50+6.05 грн
100+5.89 грн
500+4.26 грн
1000+3.77 грн
Мінімальне замовлення: 31 шт
В кошику  од. на суму  грн.
BZX384C15-E3-08 PdfFile_148489.pdf
BZX384C15-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
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BZX384C5V6-E3-08 PdfFile_148489.pdf
BZX384C5V6-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
на замовлення 4743 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
13+24.35 грн
22+14.37 грн
100+9.05 грн
500+6.30 грн
1000+5.59 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
MMSZ5245C-E3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5245C-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Cut Tape (CT)
на замовлення 3134 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
27+11.78 грн
39+7.79 грн
100+3.63 грн
500+3.38 грн
1000+3.35 грн
Мінімальне замовлення: 27 шт
В кошику  од. на суму  грн.
VTVS11GSMF-HM3-08 vtvs3v3asmf.pdf
VTVS11GSMF-HM3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 11.2V 18V DO219AB
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VTVS15GSMF-HM3-08 vtvs3v3asmf.pdf
VTVS15GSMF-HM3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15.1VWM 25VC DO219AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 25V
Voltage - Breakdown (Min): 17.6V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 15.1V
Current - Peak Pulse (10/1000µs): 15.89A
Capacitance @ Frequency: 684pF @ 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
на замовлення 2270 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
5+73.06 грн
10+43.80 грн
100+28.56 грн
500+20.64 грн
1000+18.65 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
VTVS28ASMF-HM3-08 vtvs3v3asmf.pdf
VTVS28ASMF-HM3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 27.9VWM 47VC DO219AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 47V
Voltage - Breakdown (Min): 31.4V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 27.9V
Current - Peak Pulse (10/1000µs): 8.21A
Capacitance @ Frequency: 412pF @ 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
на замовлення 25862 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
14+22.78 грн
19+16.72 грн
100+10.05 грн
500+8.71 грн
1000+6.88 грн
Мінімальне замовлення: 14 шт
В кошику  од. на суму  грн.
VTVS33ASMF-M3-08 vtvs3v3asmf.pdf
VTVS33ASMF-M3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 55VC DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 379pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.91A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 55V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 25711 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
29+11.00 грн
38+8.02 грн
100+7.79 грн
500+7.13 грн
1000+6.35 грн
Мінімальне замовлення: 29 шт
В кошику  од. на суму  грн.
VTVS43ASMF-HM3-08 vtvs3v3asmf.pdf
VTVS43ASMF-HM3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 43.2VWM 73VC DO219AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 73V
Voltage - Breakdown (Min): 48.5V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 43.2V
Current - Peak Pulse (10/1000µs): 5.23A
Capacitance @ Frequency: 292pF @ 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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VTVS47GSMF-M3-08 vtvs3v3asmf.pdf
VTVS47GSMF-M3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 46.8VWM 80VC DO219AB
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 80V
Voltage - Breakdown (Min): 54.88V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 46.8V
Current - Peak Pulse (10/1000µs): 4.9A
Capacitance @ Frequency: 293pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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VTVS5V0ASMF-HM3-08 vtvs3v3asmf.pdf
VTVS5V0ASMF-HM3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 8.9VC DO219AB
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 42.95A
Capacitance @ Frequency: 2095pF @ 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 8.9V
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
на замовлення 33601 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
10+31.42 грн
17+18.00 грн
100+13.19 грн
500+11.20 грн
1000+8.45 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
VTVS9V4GSMF-M3-08 vtvs3v3asmf.pdf
VTVS9V4GSMF-M3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 9.4VWM 14.9VC DO219AB
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2KBP02M-E4/72 2KBP005M-10M-E4,_3N253-259-E4_Rev_Apr_2017.pdf
2KBP02M-E4/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
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2KBP02ML-5301E4/72
2KBP02ML-5301E4/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
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2KBP02ML-6192E4/72
2KBP02ML-6192E4/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
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2KBP04M-E4/72 2KBP005M-10M-E4,_3N253-259-E4_Rev_Apr_2017.pdf
2KBP04M-E4/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 2A KBPM
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2KBP04ML-6212E4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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2KBP04ML-6212E4/72
2KBP04ML-6212E4/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 2A KBPM
Packaging: Box
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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2KBP04ML-6422E4/51
2KBP04ML-6422E4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 2A KBPM
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2KBP04ML-6422E4/72
2KBP04ML-6422E4/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 2A KBPM
Packaging: Box
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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2KBP04ML-6533E4/72
2KBP04ML-6533E4/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 2A KBPM
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2KBP06M-E4/72 2KBP005M-10M-E4%2C_3N253-259-E4_Rev_Apr_2017.pdf
2KBP06M-E4/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Packaging: Box
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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2KBP06ML-36E4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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2KBP06ML-5301E4/51
2KBP06ML-5301E4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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2KBP06ML-5301E4/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Packaging: Box
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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2KBP06ML-5303E4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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2KBP06ML-6145E4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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2KBP06ML-6145E4/72
2KBP06ML-6145E4/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
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2KBP06ML-6420E4/72
2KBP06ML-6420E4/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
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2KBP06ML-6762E4/72
2KBP06ML-6762E4/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
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2KBP08M-23E4/51 2KBP005M-10M-E4%2C_3N253-259-E4_Rev_Apr_2017.pdf
2KBP08M-23E4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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2KBP08M-E4/72 2KBP005M-10M-E4%2C_3N253-259-E4_Rev_Apr_2017.pdf
2KBP08M-E4/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2A KBPM
Packaging: Box
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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2KBP08ML-24E4/51
2KBP08ML-24E4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Tray
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2KBP08ML-6581E4/72
2KBP08ML-6581E4/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2A KBPM
Packaging: Box
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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2KBP08ML-7001E4/72
2KBP08ML-7001E4/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2A KBPM
Packaging: Box
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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2KBP10M-28E4/51 2KBP005M-10M-E4,_3N253-259-E4_Rev_Apr_2017.pdf
2KBP10M-28E4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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2KBP10M-E4/72 2KBP005M-10M-E4,_3N253-259-E4_Rev_Apr_2017.pdf
2KBP10M-E4/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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2KBP10ML-001E4/51
2KBP10ML-001E4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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2KBP10ML-5/22
2KBP10ML-5/22
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Bulk
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2KBP10ML-5E4/51
2KBP10ML-5E4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Tray
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2KBP10ML-5E4/72
2KBP10ML-5E4/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
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2KBP10ML-6767E4/51
2KBP10ML-6767E4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Tray
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2KBP10ML-6767E4/72
2KBP10ML-6767E4/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
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2KBP10ML-7001E4/51
2KBP10ML-7001E4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
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3KBP02M-E4/72 3KBP005%2C01%2C02%2C04%2C06%2C08M.pdf
3KBP02M-E4/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 3A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
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3KBP04M-E4/72 3KBP005,01,02,04,06,08M.pdf
3KBP04M-E4/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 3A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 400 V
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
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3KBP06M-E4/72 3KBP005%2C01%2C02%2C04%2C06%2C08M.pdf
3KBP06M-E4/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3A KBPM
Packaging: Box
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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3KBP08M-01E4/P 3KBP005,01,02,04,06,08M.pdf
3KBP08M-01E4/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Bulk
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3KBP08M-E4/72 3KBP005%2C01%2C02%2C04%2C06%2C08M.pdf
3KBP08M-E4/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3A KBPM
Packaging: Box
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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3N257-5410E4/51 2KBP005M-10M-E4,_3N253-259-E4_Rev_Apr_2017.pdf
3N257-5410E4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Tray
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3N257-E4/72 2KBP005M-10M-E4%2C_3N253-259-E4_Rev_Apr_2017.pdf
3N257-E4/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Box
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3N258-E4/72 2KBP005M-10M-E4,_3N253-259-E4_Rev_Apr_2017.pdf
3N258-E4/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2A KBPM
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KBP02M-61E4/51 KBP005M_thru_10M,%203N246_thru_52.pdf
KBP02M-61E4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 1.5A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.57 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Tray
товару немає в наявності
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