Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (41234) > Сторінка 378 з 688
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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V1PM12-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 120V 1A DO219ADPackaging: Tape & Reel (TR) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 100pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 120 V |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
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V1PM12HM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 120V 1A DO219ADPackaging: Tape & Reel (TR) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 100pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 120 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 4500 шт В кошику од. на суму грн. | ||||||||||||
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V2PM12HM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 120V 2A DO219ADPackaging: Tape & Reel (TR) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 140pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 120 V Qualification: AEC-Q101 |
на замовлення 112500 шт: термін постачання 21-31 дні (днів) |
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V1PM15-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 150V 1A DO219ADPackaging: Tape & Reel (TR) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 65pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 150 V |
на замовлення 54000 шт: термін постачання 21-31 дні (днів) |
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V1PM15HM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 150V 1A DO219ADPackaging: Tape & Reel (TR) Package / Case: MicroSMP Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 65pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: MicroSMP (DO-219AD) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 150 V Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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VS-EPH3006L-N3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 30A TO247AD |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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VS-E4PU3006L-N3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 30A TO247ADPackaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 65 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
на замовлення 208 шт: термін постачання 21-31 дні (днів) |
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VS-C4PU3006L-N3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 15A TO247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V |
на замовлення 198 шт: термін постачання 21-31 дні (днів) |
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VS-EPH3006LHN3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 30A TO247ADPackaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 26 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A Current - Reverse Leakage @ Vr: 30 µA @ 600 V Qualification: AEC-Q101 |
на замовлення 180 шт: термін постачання 21-31 дні (днів) |
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VS-E4PH6006LHN3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 60A TO247ADPackaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 68 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 60 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V Qualification: AEC-Q101 |
на замовлення 456 шт: термін постачання 21-31 дні (днів) |
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VS-QA250FA20 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD SCHOT 200V 250A SOT227Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 54 ns Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A Current - Reverse Leakage @ Vr: 90 µA @ 200 V |
на замовлення 1381 шт: термін постачання 21-31 дні (днів) |
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V8PM10S-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 8A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 860pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 8 A Current - Reverse Leakage @ Vr: 200 µA @ 100 V |
на замовлення 6500 шт: термін постачання 21-31 дні (днів) |
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VS-30ETU12T-N3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 30A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 220 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - Forward (Vf) (Max) @ If: 2.68 V @ 30 A Current - Reverse Leakage @ Vr: 145 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-30ETU12THN3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 30A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 220 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - Forward (Vf) (Max) @ If: 2.68 V @ 30 A Current - Reverse Leakage @ Vr: 145 µA @ 1200 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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VS-ETH3007T-N3 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 650V 30A TO220AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-ETH3007THN3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 650V 30A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 37 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V Qualification: AEC-Q101 |
на замовлення 995 шт: термін постачання 21-31 дні (днів) |
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VS-ETX3007T-N3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 650V 30A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-ETX3007THN3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 650V 30A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V Qualification: AEC-Q101 |
на замовлення 964 шт: термін постачання 21-31 дні (днів) |
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SMC5K28A-M3/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 28VWM 45.4VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 110A Voltage - Reverse Standoff (Typ): 28V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 31.1V Voltage - Clamping (Max) @ Ipp: 45.4V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 850 шт В кошику од. на суму грн. | ||||||||||||
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SMC5K28A-M3/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 28VWM 45.4VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 110A Voltage - Reverse Standoff (Typ): 28V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 31.1V Voltage - Clamping (Max) @ Ipp: 45.4V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
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SMC5K30A-M3/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 30VWM 48.4VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 103A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 48.4V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 850 шт В кошику од. на суму грн. | ||||||||||||
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SMC5K30A-M3/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 30VWM 48.4VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 103A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 48.4V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active |
на замовлення 10500 шт: термін постачання 21-31 дні (днів) |
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V8KM60DUHM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOT 60V 8A FLATPAKPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: FlatPAK 5x6 (Dual) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 4 A Current - Reverse Leakage @ Vr: 300 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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V8KM60DUHM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOT 60V 8A FLATPAKPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: FlatPAK 5x6 (Dual) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 4 A Current - Reverse Leakage @ Vr: 300 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||
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V8KM60DU-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOT 60V 8A FLATPAKPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: FlatPAK 5x6 (Dual) Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 4 A Current - Reverse Leakage @ Vr: 300 µA @ 60 V |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||
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V8KM60DU-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOT 60V 8A FLATPAKPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: FlatPAK 5x6 (Dual) Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 4 A Current - Reverse Leakage @ Vr: 300 µA @ 60 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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V10KM120DUHM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 120V 10A FLATPAKPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: FlatPAK 5x6 (Dual) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A Current - Reverse Leakage @ Vr: 350 µA @ 120 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||
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V10KM120DUHM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 120V 10A FLATPAKPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: FlatPAK 5x6 (Dual) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A Current - Reverse Leakage @ Vr: 350 µA @ 120 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||
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V10KM120DU-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 120V 10A FLATPAKPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: FlatPAK 5x6 (Dual) Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A Current - Reverse Leakage @ Vr: 350 µA @ 120 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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V10KM120DU-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 120V 10A FLATPAKPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: FlatPAK 5x6 (Dual) Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A Current - Reverse Leakage @ Vr: 350 µA @ 120 V |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||
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V2P6-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 2A DO219ADPackaging: Cut Tape (CT) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 195pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V |
на замовлення 19828 шт: термін постачання 21-31 дні (днів) |
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V2PM10-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 2A DO219ADPackaging: Cut Tape (CT) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 150pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
на замовлення 12237 шт: термін постачання 21-31 дні (днів) |
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V2PM10HM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 2A DO219ADPackaging: Cut Tape (CT) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 150pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 47208 шт: термін постачання 21-31 дні (днів) |
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V1PM12-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 120V 1A DO219ADPackaging: Cut Tape (CT) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 100pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 120 V |
на замовлення 97885 шт: термін постачання 21-31 дні (днів) |
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V1PM12HM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 120V 1A DO219ADPackaging: Cut Tape (CT) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 100pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 120 V Qualification: AEC-Q101 |
на замовлення 5719 шт: термін постачання 21-31 дні (днів) |
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V2PM12HM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 120V 2A DO219ADPackaging: Cut Tape (CT) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 140pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 120 V Qualification: AEC-Q101 |
на замовлення 112696 шт: термін постачання 21-31 дні (днів) |
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V1PM15-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 150V 1A DO219ADPackaging: Cut Tape (CT) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 65pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 150 V |
на замовлення 57994 шт: термін постачання 21-31 дні (днів) |
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V1PM15HM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 150V 1A DO219ADPackaging: Cut Tape (CT) Package / Case: MicroSMP Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 65pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: MicroSMP (DO-219AD) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 150 V Qualification: AEC-Q101 |
на замовлення 12579 шт: термін постачання 21-31 дні (днів) |
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VS-FC420SA10 | Vishay General Semiconductor - Diodes Division |
Description: MOSFET N-CH 100V 435A SOT227Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 435A (Tc) Rds On (Max) @ Id, Vgs: 2.15mOhm @ 200A, 10V Power Dissipation (Max): 652W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 750µA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17300 pF @ 25 V |
на замовлення 5887 шт: термін постачання 21-31 дні (днів) |
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V8PM10S-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 8A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 860pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 8 A Current - Reverse Leakage @ Vr: 200 µA @ 100 V |
на замовлення 10332 шт: термін постачання 21-31 дні (днів) |
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SMC5K28A-M3/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 28VWM 45.4VC DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 110A Voltage - Reverse Standoff (Typ): 28V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 31.1V Voltage - Clamping (Max) @ Ipp: 45.4V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No |
на замовлення 492 шт: термін постачання 21-31 дні (днів) |
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SMC5K28A-M3/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 28VWM 45.4VC DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 110A Voltage - Reverse Standoff (Typ): 28V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 31.1V Voltage - Clamping (Max) @ Ipp: 45.4V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No |
на замовлення 3611 шт: термін постачання 21-31 дні (днів) |
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SMC5K30A-M3/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 30VWM 48.4VC DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 103A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 48.4V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active |
на замовлення 307 шт: термін постачання 21-31 дні (днів) |
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SMC5K30A-M3/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 30VWM 48.4VC DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 103A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 48.4V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active |
на замовлення 12167 шт: термін постачання 21-31 дні (днів) |
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V8KM60DUHM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOT 60V 8A FLATPAKPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: FlatPAK 5x6 (Dual) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 4 A Current - Reverse Leakage @ Vr: 300 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 2910 шт: термін постачання 21-31 дні (днів) |
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V8KM60DU-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOT 60V 8A FLATPAKPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: FlatPAK 5x6 (Dual) Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 4 A Current - Reverse Leakage @ Vr: 300 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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V8KM60DU-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOT 60V 8A FLATPAKPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: FlatPAK 5x6 (Dual) Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 4 A Current - Reverse Leakage @ Vr: 300 µA @ 60 V |
на замовлення 17196 шт: термін постачання 21-31 дні (днів) |
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V10KM120DUHM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 120V 10A FLATPAKPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: FlatPAK 5x6 (Dual) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A Current - Reverse Leakage @ Vr: 350 µA @ 120 V Qualification: AEC-Q101 |
на замовлення 57 шт: термін постачання 21-31 дні (днів) |
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V10KM120DUHM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 120V 10A FLATPAKPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: FlatPAK 5x6 (Dual) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A Current - Reverse Leakage @ Vr: 350 µA @ 120 V Qualification: AEC-Q101 |
на замовлення 743 шт: термін постачання 21-31 дні (днів) |
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V10KM120DU-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 120V 10A FLATPAKPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: FlatPAK 5x6 (Dual) Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A Current - Reverse Leakage @ Vr: 350 µA @ 120 V |
на замовлення 2280 шт: термін постачання 21-31 дні (днів) |
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V10KM120DU-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 120V 10A FLATPAKPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: FlatPAK 5x6 (Dual) Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A Current - Reverse Leakage @ Vr: 350 µA @ 120 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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1.5SMC24CA-E3/57T | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 20.5VWM 33.2VC SMCPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 45.2A Voltage - Reverse Standoff (Typ): 20.5V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 33.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 1700 шт В кошику од. на суму грн. | ||||||||||||
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1.5SMC24CA-E3/9AT | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 20.5VWM 33.2VC SMCPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 45.2A Voltage - Reverse Standoff (Typ): 20.5V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 33.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | ||||||||||||
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1.5SMC24CAHE3/57T | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 20.5VWM 33.2VC SMCPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 45.2A Voltage - Reverse Standoff (Typ): 20.5V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 33.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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1.5SMC24CAHE3/9AT | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 20.5VWM 33.2VC SMCPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 45.2A Voltage - Reverse Standoff (Typ): 20.5V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 33.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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1.5SMC24CA-M3/57T | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 20.5VWM 33.2VC SMCPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 45.2A Voltage - Reverse Standoff (Typ): 20.5V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 33.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 3400 шт В кошику од. на суму грн. | ||||||||||||
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1.5SMC24CA-M3/9AT | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 20.5VWM 33.2VC SMCPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 45.2A Voltage - Reverse Standoff (Typ): 20.5V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 33.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | ||||||||||||
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1N4148W-HG3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 75V 150MA SOD123Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 µA @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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1N4148W-HG3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 75V 150MA SOD123Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 µA @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| 1N6295AHE3_A/C | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 85.5VWM 137VC 1.5KEPackaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 10.9A Voltage - Reverse Standoff (Typ): 85.5V Supplier Device Package: 1.5KE Unidirectional Channels: 1 Voltage - Breakdown (Min): 95V Voltage - Clamping (Max) @ Ipp: 137V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
| V1PM12-M3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 120 V
Description: DIODE SCHOTTKY 120V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 120 V
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4500+ | 3.19 грн |
| 9000+ | 2.77 грн |
| 13500+ | 2.62 грн |
| 22500+ | 2.29 грн |
| 31500+ | 2.20 грн |
| 45000+ | 2.10 грн |
| V1PM12HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 120 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 120V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 120 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 4500 шт
В кошику
од. на суму грн.
| V2PM12HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 2A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 120 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 120V 2A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 120 V
Qualification: AEC-Q101
на замовлення 112500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4500+ | 6.63 грн |
| 9000+ | 5.81 грн |
| 13500+ | 5.52 грн |
| 22500+ | 4.87 грн |
| 31500+ | 4.69 грн |
| 45000+ | 4.51 грн |
| V1PM15-M3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Description: DIODE SCHOTTKY 150V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4500+ | 5.48 грн |
| 9000+ | 4.79 грн |
| 13500+ | 4.54 грн |
| 22500+ | 4.00 грн |
| 31500+ | 3.84 грн |
| 45000+ | 3.69 грн |
| V1PM15HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4500+ | 5.81 грн |
| 9000+ | 5.09 грн |
| VS-EPH3006L-N3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO247AD
Description: DIODE GEN PURP 600V 30A TO247AD
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 160.87 грн |
| VS-E4PU3006L-N3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE STANDARD 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 208 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 168.57 грн |
| 25+ | 78.10 грн |
| 100+ | 77.19 грн |
| VS-C4PU3006L-N3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 15A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Description: DIODE STANDARD 600V 15A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
на замовлення 198 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 201.67 грн |
| 25+ | 101.16 грн |
| 100+ | 82.95 грн |
| VS-EPH3006LHN3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Qualification: AEC-Q101
на замовлення 180 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 130.85 грн |
| 25+ | 100.84 грн |
| 100+ | 82.96 грн |
| VS-E4PH6006LHN3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 68 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 68 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Qualification: AEC-Q101
на замовлення 456 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 214.75 грн |
| 25+ | 121.71 грн |
| 100+ | 121.13 грн |
| VS-QA250FA20 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD SCHOT 200V 250A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 54 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 90 µA @ 200 V
Description: DIODE MOD SCHOT 200V 250A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 54 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 90 µA @ 200 V
на замовлення 1381 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2182.95 грн |
| 10+ | 1541.82 грн |
| 100+ | 1226.66 грн |
| 500+ | 1149.82 грн |
| V8PM10S-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
на замовлення 6500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6500+ | 15.95 грн |
| VS-30ETU12T-N3 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 2.68 V @ 30 A
Current - Reverse Leakage @ Vr: 145 µA @ 1200 V
Description: DIODE GEN PURP 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 2.68 V @ 30 A
Current - Reverse Leakage @ Vr: 145 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-30ETU12THN3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - Forward (Vf) (Max) @ If: 2.68 V @ 30 A
Current - Reverse Leakage @ Vr: 145 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - Forward (Vf) (Max) @ If: 2.68 V @ 30 A
Current - Reverse Leakage @ Vr: 145 µA @ 1200 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| VS-ETH3007T-N3 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 650V 30A TO220AC
Description: DIODE GEN PURP 650V 30A TO220AC
товару немає в наявності
В кошику
од. на суму грн.
| VS-ETH3007THN3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 650V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Qualification: AEC-Q101
Description: DIODE STANDARD 650V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Qualification: AEC-Q101
на замовлення 995 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 134.70 грн |
| 50+ | 65.08 грн |
| 100+ | 63.60 грн |
| 500+ | 55.16 грн |
| VS-ETX3007T-N3 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 650V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE GEN PURP 650V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-ETX3007THN3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 650V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Qualification: AEC-Q101
Description: DIODE STANDARD 650V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Qualification: AEC-Q101
на замовлення 964 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 265.56 грн |
| 50+ | 129.65 грн |
| 100+ | 117.42 грн |
| 500+ | 90.06 грн |
| SMC5K28A-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 110A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 110A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товару немає в наявності
Мінімальне замовлення: 850 шт
В кошику
од. на суму грн.
| SMC5K28A-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 110A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 110A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3500+ | 26.11 грн |
| SMC5K30A-M3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 850 шт
В кошику
од. на суму грн.
| SMC5K30A-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
на замовлення 10500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3500+ | 23.15 грн |
| 7000+ | 21.90 грн |
| 10500+ | 21.18 грн |
| V8KM60DUHM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOT 60V 8A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOT 60V 8A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 23.26 грн |
| V8KM60DUHM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOT 60V 8A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOT 60V 8A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| V8KM60DU-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOT 60V 8A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Description: DIODE ARRAY SCHOT 60V 8A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| V8KM60DU-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOT 60V 8A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Description: DIODE ARRAY SCHOT 60V 8A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6000+ | 13.01 грн |
| 12000+ | 11.59 грн |
| V10KM120DUHM3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 10A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 350 µA @ 120 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 120V 10A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 350 µA @ 120 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| V10KM120DUHM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 10A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 350 µA @ 120 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 120V 10A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 350 µA @ 120 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| V10KM120DU-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 10A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 350 µA @ 120 V
Description: DIODE ARR SCHOT 120V 10A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 350 µA @ 120 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 18.13 грн |
| V10KM120DU-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 10A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 350 µA @ 120 V
Description: DIODE ARR SCHOT 120V 10A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 350 µA @ 120 V
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| V2P6-M3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 195pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Description: DIODE SCHOTTKY 60V 2A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 195pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
на замовлення 19828 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 13.86 грн |
| 34+ | 8.75 грн |
| 100+ | 7.12 грн |
| 500+ | 4.93 грн |
| 1000+ | 3.30 грн |
| 2000+ | 3.07 грн |
| V2PM10-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE SCHOTTKY 100V 2A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 12237 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 29+ | 10.78 грн |
| 47+ | 6.37 грн |
| 100+ | 5.96 грн |
| 500+ | 4.17 грн |
| 1000+ | 3.66 грн |
| V2PM10HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 2A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
на замовлення 47208 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.56 грн |
| 16+ | 18.75 грн |
| 100+ | 11.83 грн |
| 500+ | 8.30 грн |
| 1000+ | 7.39 грн |
| 2000+ | 6.62 грн |
| V1PM12-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 120 V
Description: DIODE SCHOTTKY 120V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 120 V
на замовлення 97885 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.16 грн |
| 43+ | 7.04 грн |
| 100+ | 6.80 грн |
| 500+ | 4.92 грн |
| 1000+ | 3.71 грн |
| 2000+ | 3.39 грн |
| V1PM12HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 120 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 120V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 120 V
Qualification: AEC-Q101
на замовлення 5719 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.09 грн |
| 36+ | 8.38 грн |
| 100+ | 6.58 грн |
| 500+ | 4.80 грн |
| 1000+ | 4.05 грн |
| 2000+ | 3.77 грн |
| V2PM12HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 2A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 120 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 120V 2A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 120 V
Qualification: AEC-Q101
на замовлення 112696 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.33 грн |
| 16+ | 19.12 грн |
| 100+ | 12.05 грн |
| 500+ | 8.45 грн |
| 1000+ | 7.53 грн |
| 2000+ | 6.75 грн |
| V1PM15-M3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Description: DIODE SCHOTTKY 150V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
на замовлення 57994 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.94 грн |
| 19+ | 16.08 грн |
| 100+ | 10.10 грн |
| 500+ | 7.04 грн |
| 1000+ | 6.26 грн |
| 2000+ | 5.59 грн |
| V1PM15HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
на замовлення 12579 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 28.48 грн |
| 18+ | 16.97 грн |
| 100+ | 10.67 грн |
| 500+ | 7.46 грн |
| 1000+ | 6.63 грн |
| 2000+ | 5.93 грн |
| VS-FC420SA10 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: MOSFET N-CH 100V 435A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 435A (Tc)
Rds On (Max) @ Id, Vgs: 2.15mOhm @ 200A, 10V
Power Dissipation (Max): 652W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 750µA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17300 pF @ 25 V
Description: MOSFET N-CH 100V 435A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 435A (Tc)
Rds On (Max) @ Id, Vgs: 2.15mOhm @ 200A, 10V
Power Dissipation (Max): 652W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 750µA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17300 pF @ 25 V
на замовлення 5887 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1867.37 грн |
| 10+ | 1306.70 грн |
| 100+ | 1030.09 грн |
| 500+ | 944.22 грн |
| V8PM10S-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
на замовлення 10332 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 71.58 грн |
| 10+ | 42.84 грн |
| 100+ | 27.96 грн |
| 500+ | 20.21 грн |
| 1000+ | 18.26 грн |
| 2000+ | 16.63 грн |
| SMC5K28A-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 110A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 110A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
на замовлення 492 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.12 грн |
| 10+ | 49.74 грн |
| 100+ | 38.69 грн |
| SMC5K28A-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 110A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 110A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
на замовлення 3611 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.12 грн |
| 10+ | 49.74 грн |
| 100+ | 38.69 грн |
| 500+ | 30.78 грн |
| 1000+ | 25.07 грн |
| SMC5K30A-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
на замовлення 307 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 66.20 грн |
| 10+ | 51.81 грн |
| 100+ | 37.04 грн |
| SMC5K30A-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
на замовлення 12167 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 58.50 грн |
| 10+ | 46.18 грн |
| 100+ | 35.90 грн |
| 500+ | 28.29 грн |
| 1000+ | 23.24 грн |
| V8KM60DUHM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOT 60V 8A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOT 60V 8A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Qualification: AEC-Q101
на замовлення 2910 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 84.67 грн |
| 10+ | 51.00 грн |
| 100+ | 33.56 грн |
| 500+ | 24.45 грн |
| V8KM60DU-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOT 60V 8A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Description: DIODE ARRAY SCHOT 60V 8A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
товару немає в наявності
В кошику
од. на суму грн.
| V8KM60DU-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOT 60V 8A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Description: DIODE ARRAY SCHOT 60V 8A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
на замовлення 17196 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 59.27 грн |
| 10+ | 35.58 грн |
| 100+ | 23.00 грн |
| 500+ | 16.51 грн |
| 1000+ | 14.88 грн |
| 2000+ | 13.50 грн |
| V10KM120DUHM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 10A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 350 µA @ 120 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 120V 10A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 350 µA @ 120 V
Qualification: AEC-Q101
на замовлення 57 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.42 грн |
| 10+ | 35.58 грн |
| V10KM120DUHM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 10A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 350 µA @ 120 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 120V 10A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 350 µA @ 120 V
Qualification: AEC-Q101
на замовлення 743 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.42 грн |
| 10+ | 35.58 грн |
| 100+ | 24.38 грн |
| 500+ | 18.11 грн |
| V10KM120DU-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 10A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 350 µA @ 120 V
Description: DIODE ARR SCHOT 120V 10A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 350 µA @ 120 V
на замовлення 2280 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.51 грн |
| 10+ | 40.92 грн |
| 100+ | 26.62 грн |
| 500+ | 19.20 грн |
| V10KM120DU-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 10A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 350 µA @ 120 V
Description: DIODE ARR SCHOT 120V 10A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 350 µA @ 120 V
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| 1.5SMC24CA-E3/57T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20.5VWM 33.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 45.2A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 20.5VWM 33.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 45.2A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товару немає в наявності
Мінімальне замовлення: 1700 шт
В кошику
од. на суму грн.
| 1.5SMC24CA-E3/9AT |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20.5VWM 33.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 45.2A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 20.5VWM 33.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 45.2A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику
од. на суму грн.
| 1.5SMC24CAHE3/57T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20.5VWM 33.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 45.2A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 20.5VWM 33.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 45.2A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| 1.5SMC24CAHE3/9AT |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20.5VWM 33.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 45.2A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 20.5VWM 33.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 45.2A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| 1.5SMC24CA-M3/57T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20.5VWM 33.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 45.2A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 20.5VWM 33.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 45.2A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товару немає в наявності
Мінімальне замовлення: 3400 шт
В кошику
од. на суму грн.
| 1.5SMC24CA-M3/9AT |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20.5VWM 33.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 45.2A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 20.5VWM 33.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 45.2A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику
од. на суму грн.
| 1N4148W-HG3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 75V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE STANDARD 75V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
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од. на суму грн.
| 1N4148W-HG3-18 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 75V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE STANDARD 75V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
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| 1N6295AHE3_A/C |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 85.5VWM 137VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 85.5VWM 137VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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