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SMBJ36CD-M3/I SMBJ36CD-M3/I Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 36VWM 57.3VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.5A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40.6V
Voltage - Clamping (Max) @ Ipp: 57.3V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 2835 шт:
термін постачання 21-31 дні (днів)
12+30.09 грн
15+22.54 грн
100+13.54 грн
500+11.76 грн
1000+8.00 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
SMBJ48CA-E3/5B SMBJ48CA-E3/5B Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 48VWM 77.4VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.8A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 991 шт:
термін постачання 21-31 дні (днів)
12+28.42 грн
18+18.67 грн
100+12.69 грн
500+10.81 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
SMBJ48CD-M3/I SMBJ48CD-M3/I Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 48VWM 76.3VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.9A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 54.1V
Voltage - Clamping (Max) @ Ipp: 76.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 973 шт:
термін постачання 21-31 дні (днів)
9+37.61 грн
15+22.29 грн
100+14.17 грн
500+9.99 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
SMBJ5.0CD-M3/I SMBJ5.0CD-M3/I Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 5VWM 9.1VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 65.9A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 9.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 5133 шт:
термін постачання 21-31 дні (днів)
8+44.30 грн
13+26.08 грн
100+16.68 грн
500+11.83 грн
1000+10.59 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SMBJ58CA-E3/5B SMBJ58CA-E3/5B Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 58VWM 93.6VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 2680 шт:
термін постачання 21-31 дні (днів)
12+29.25 грн
18+18.83 грн
100+12.79 грн
500+10.24 грн
1000+9.46 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
SMBJ58CD-M3/I SMBJ58CD-M3/I Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 58VWM 92.3VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 65.4V
Voltage - Clamping (Max) @ Ipp: 92.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 2515 шт:
термін постачання 21-31 дні (днів)
12+29.25 грн
17+19.32 грн
100+13.09 грн
500+9.55 грн
1000+8.28 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
SMBJ60CA-E3/5B SMBJ60CA-E3/5B Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 60VWM 96.8VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 2805 шт:
термін постачання 21-31 дні (днів)
12+29.25 грн
18+18.83 грн
100+12.79 грн
500+10.24 грн
1000+9.39 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
VSB1545-5300M3/73 VSB1545-5300M3/73 Vishay General Semiconductor - Diodes Division VSB1545-M3.pdf Description: DIODE SCHOTTKY 45V 6A P600
Packaging: Tape & Box (TB)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1290pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 45 V
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BYV32-150801HE3/45 BYV32-150801HE3/45 Vishay General Semiconductor - Diodes Division byv32.pdf Description: DIODE ARRAY GP 150V 18A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
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BYW29-100801HE3/45 BYW29-100801HE3/45 Vishay General Semiconductor - Diodes Division byw29200.pdf Description: DIODE ARRAY GP 100V TO-220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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FEP16BT-5001HE3/45 FEP16BT-5001HE3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 100V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
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FEP16DT-33HE3/45 FEP16DT-33HE3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 200V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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FEP16DT-5001HE3/45 FEP16DT-5001HE3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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FEP16GT-1HE3/45 FEP16GT-1HE3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 400V 16A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
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FEP16GT-5300HE3/45 FEP16GT-5300HE3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 400V 16A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
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FEP16GT-5400HE3/45 FEP16GT-5400HE3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 400V 16A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
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FES16JT-5410HE3/45 FES16JT-5410HE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE ARRAY GP 600V TO-220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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FES16JT-9HE3/45 FES16JT-9HE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE ARRAY GP 600V TO-220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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FES8BT-7005HE3/45 FES8BT-7005HE3/45 Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY GP TO220AC
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FES8CT-5400HE3/45 FES8CT-5400HE3/45 Vishay General Semiconductor - Diodes Division FES(F,B)8AT_thru_8JT.pdf Description: DIODE ARRAY GP TO220AC
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FES8DT-12HE3/45 FES8DT-12HE3/45 Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY GP 200V TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
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FES8GT-5301HE3/45 FES8GT-5301HE3/45 Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY GP 400V TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
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FES8GT-6HE3/45 FES8GT-6HE3/45 Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY GP 400V TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
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FES8JT-13HE3/45 FES8JT-13HE3/45 Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY GP 600V TO-220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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FES8JT-5410HE3/45 FES8JT-5410HE3/45 Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY GP 600V TO-220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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FES8JTL-7002E3/45 Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY GP TO220AC
Packaging: Tube
Part Status: Obsolete
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FES8JTL-7002HE3/45 Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY GP TO220AC
Packaging: Tube
Part Status: Obsolete
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MBR1035-4HE3/45 MBR1035-4HE3/45 Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY ARRAY TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
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MBR1045-10HE3/45 MBR1045-10HE3/45 Vishay General Semiconductor - Diodes Division mbr10xx.pdf Description: DIODE ARRAY SCHOTTKY 45V TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
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MBR1060-5410HE3/45 MBR1060-5410HE3/45 Vishay General Semiconductor - Diodes Division mbr10xx.pdf Description: DIODE ARRAY SCHOTTKY 60V TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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MBR1545CT-1HE3/45 MBR1545CT-1HE3/45 Vishay General Semiconductor - Diodes Division MBR%28F%2CB%2915H35CT%20-%2015H60CT.pdf Description: DIODE ARR SCHOT 45V 7.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
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MBR1545CT801HE3/45 MBR1545CT801HE3/45 Vishay General Semiconductor - Diodes Division MBR%28F%2CB%2915H35CT%20-%2015H60CT.pdf Description: DIODE ARR SCHOT 45V 7.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
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MBR1545CT802HE3/45 MBR1545CT802HE3/45 Vishay General Semiconductor - Diodes Division MBR%28F%2CB%2915H35CT%20-%2015H60CT.pdf Description: DIODE ARR SCHOT 45V 7.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
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MBR1560CT-2HE3/45 MBR1560CT-2HE3/45 Vishay General Semiconductor - Diodes Division MBR%28F%2CB%2915H35CT%20-%2015H60CT.pdf Description: DIODE ARR SCHOT 60V 7.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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MBR1635-1HE3/45 MBR1635-1HE3/45 Vishay General Semiconductor - Diodes Division mbrf16xx.pdf Description: DIODE SCHOTTKY ARRAY TO220AB
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
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MBR1645-10HE3/45 MBR1645-10HE3/45 Vishay General Semiconductor - Diodes Division mbrf16xx.pdf Description: DIODE ARRAY SCHOTTKY 45V TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 16
Voltage Coupled to Current - Reverse Leakage @ Vr: 45
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MBR1645-2HE3/45 MBR1645-2HE3/45 Vishay General Semiconductor - Diodes Division mbrf16xx.pdf Description: DIODE ARRAY SCHOTTKY 45V TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 16
Voltage Coupled to Current - Reverse Leakage @ Vr: 45
Grade: Automotive
Qualification: AEC-Q101
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MBR1660-5300HE3/45 MBR1660-5300HE3/45 Vishay General Semiconductor - Diodes Division mbrf16xx.pdf Description: DIODE ARRAY SCHOTT 60V ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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MBR2545CT-7HE3/45 MBR2545CT-7HE3/45 Vishay General Semiconductor - Diodes Division mbr25xxct.pdf Description: DIODE ARR SCHOT 45V 12.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
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MBR2545CT801HE3/45 MBR2545CT801HE3/45 Vishay General Semiconductor - Diodes Division mbr25xxct.pdf Description: DIODE ARR SCHOT 45V 12.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 30
Voltage Coupled to Current - Reverse Leakage @ Vr: 45
Grade: Automotive
Qualification: AEC-Q101
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SBL1040CT804HE3/45 SBL1040CT804HE3/45 Vishay General Semiconductor - Diodes Division bl1040ct.pdf Description: DIODE ARR SCHOTT 40V 5A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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UG18DCT-5410HE3/45 UG18DCT-5410HE3/45 Vishay General Semiconductor - Diodes Division UG%28F%2CB%2918ACT%20thru%20UG%28F%2CB%2918DCT.pdf Description: DIODE ARRAY GP 200V 18A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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V80100PW-M3R/4W Vishay General Semiconductor - Diodes Division v80100pw.pdf Description: DIODE ARRAY SCHOTTKY TO3PW
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VSB3200-M3/51 VSB3200-M3/51 Vishay General Semiconductor - Diodes Division VSB3200.pdf Description: DIODE SCHOTTKY 200V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 60 µA @ 200 V
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V1PM10-M3/H V1PM10-M3/H Vishay General Semiconductor - Diodes Division v1pm10.pdf Description: DIODE SCHOTTKY 100V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 31085 шт:
термін постачання 21-31 дні (днів)
12+29.25 грн
19+17.47 грн
100+10.96 грн
500+7.64 грн
1000+6.78 грн
2000+6.06 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
V1PM10HM3/H V1PM10HM3/H Vishay General Semiconductor - Diodes Division v1pm10.pdf Description: DIODE SCHOTTKY 100V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 13754 шт:
термін постачання 21-31 дні (днів)
11+30.92 грн
18+18.43 грн
100+11.57 грн
500+8.07 грн
1000+7.17 грн
2000+6.42 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
PLZ15B-G3/H PLZ15B-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 15V 500MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 11 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
14+24.24 грн
21+16.02 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
PLZ24A-G3/H PLZ24A-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 24V 500MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±2.5%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
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PLZ2V0A-G3/H PLZ2V0A-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 1.99V 960MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±5.53%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 1.99 V
Impedance (Max) (Zzt): 140 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 120 µA @ 500 mV
Qualification: AEC-Q101
на замовлення 5367 шт:
термін постачання 21-31 дні (днів)
19+18.39 грн
32+10.38 грн
100+6.48 грн
500+4.45 грн
1000+3.93 грн
2000+3.48 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
PLZ2V2A-G3/H PLZ2V2A-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 2.21V 960MW DO219AC
на замовлення 17685 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
PLZ2V4A-G3/H PLZ2V4A-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 2.43V 960MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±3.92%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.43 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 120 µA @ 1 V
на замовлення 17829 шт:
термін постачання 21-31 дні (днів)
16+21.73 грн
23+14.17 грн
100+6.94 грн
500+5.43 грн
1000+3.77 грн
2000+3.27 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
PLZ2V7A-G3/H PLZ2V7A-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 2.65V 960MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±3.97%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.65 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
на замовлення 6477 шт:
термін постачання 21-31 дні (днів)
16+21.73 грн
23+14.17 грн
100+6.94 грн
500+5.43 грн
1000+3.77 грн
2000+3.27 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
PLZ30A-G3/H PLZ30A-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 30V 500MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 23 V
товару немає в наявності
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PLZ33A-G3/H PLZ33A-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 33V 500MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
PLZ33B-G3/H PLZ33B-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 33V 500MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 25 V
товару немає в наявності
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PLZ36B-G3/H PLZ36B-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 36V 500MW DO219AC
на замовлення 44 шт:
термін постачання 21-31 дні (днів)
13+26.75 грн
16+20.93 грн
Мінімальне замовлення: 13
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PLZ39A-G3/H PLZ39A-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 39V 500MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
на замовлення 19472 шт:
термін постачання 21-31 дні (днів)
18+19.22 грн
29+11.35 грн
100+7.07 грн
500+4.87 грн
1000+4.29 грн
2000+3.81 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
PLZ3V3A-G3/H PLZ3V3A-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 3.27V 960MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±3.36%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.27 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
на замовлення 30576 шт:
термін постачання 21-31 дні (днів)
16+21.73 грн
23+14.17 грн
100+6.94 грн
500+5.43 грн
1000+3.77 грн
2000+3.27 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
PLZ3V3B-G3/H PLZ3V3B-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 3.43V 960MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±3.07%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.43 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
на замовлення 37116 шт:
термін постачання 21-31 дні (днів)
29+11.70 грн
45+7.16 грн
111+2.92 грн
500+2.54 грн
1000+2.15 грн
2000+2.10 грн
Мінімальне замовлення: 29
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PLZ3V6A-G3/H PLZ3V6A-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 3.58V 960MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±3.36%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.58 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
на замовлення 13359 шт:
термін постачання 21-31 дні (днів)
16+21.73 грн
23+14.17 грн
100+6.94 грн
500+5.43 грн
1000+3.77 грн
2000+3.27 грн
Мінімальне замовлення: 16
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SMBJ36CD-M3/I smbj5cdthrusmbj120cd.pdf
SMBJ36CD-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 57.3VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.5A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40.6V
Voltage - Clamping (Max) @ Ipp: 57.3V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 2835 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+30.09 грн
15+22.54 грн
100+13.54 грн
500+11.76 грн
1000+8.00 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
SMBJ48CA-E3/5B smbj.pdf
SMBJ48CA-E3/5B
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 48VWM 77.4VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.8A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 991 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+28.42 грн
18+18.67 грн
100+12.69 грн
500+10.81 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
SMBJ48CD-M3/I smbj5cdthrusmbj120cd.pdf
SMBJ48CD-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 48VWM 76.3VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.9A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 54.1V
Voltage - Clamping (Max) @ Ipp: 76.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 973 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+37.61 грн
15+22.29 грн
100+14.17 грн
500+9.99 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
SMBJ5.0CD-M3/I smbj5cdthrusmbj120cd.pdf
SMBJ5.0CD-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 9.1VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 65.9A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 9.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 5133 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+44.30 грн
13+26.08 грн
100+16.68 грн
500+11.83 грн
1000+10.59 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SMBJ58CA-E3/5B smbj.pdf
SMBJ58CA-E3/5B
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 58VWM 93.6VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 2680 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+29.25 грн
18+18.83 грн
100+12.79 грн
500+10.24 грн
1000+9.46 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
SMBJ58CD-M3/I smbj5cdthrusmbj120cd.pdf
SMBJ58CD-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 58VWM 92.3VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 65.4V
Voltage - Clamping (Max) @ Ipp: 92.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 2515 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+29.25 грн
17+19.32 грн
100+13.09 грн
500+9.55 грн
1000+8.28 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
SMBJ60CA-E3/5B smbj.pdf
SMBJ60CA-E3/5B
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 60VWM 96.8VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 2805 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+29.25 грн
18+18.83 грн
100+12.79 грн
500+10.24 грн
1000+9.39 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
VSB1545-5300M3/73 VSB1545-M3.pdf
VSB1545-5300M3/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 6A P600
Packaging: Tape & Box (TB)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1290pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 45 V
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BYV32-150801HE3/45 byv32.pdf
BYV32-150801HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 150V 18A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
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BYW29-100801HE3/45 byw29200.pdf
BYW29-100801HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 100V TO-220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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FEP16BT-5001HE3/45 fep16jt.pdf
FEP16BT-5001HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 100V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
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FEP16DT-33HE3/45 fep16jt.pdf
FEP16DT-33HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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FEP16DT-5001HE3/45 fep16jt.pdf
FEP16DT-5001HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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FEP16GT-1HE3/45 fep16jt.pdf
FEP16GT-1HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 400V 16A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
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FEP16GT-5300HE3/45 fep16jt.pdf
FEP16GT-5300HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 400V 16A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
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FEP16GT-5400HE3/45 fep16jt.pdf
FEP16GT-5400HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 400V 16A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
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FES16JT-5410HE3/45 fes16jt.pdf
FES16JT-5410HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V TO-220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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FES16JT-9HE3/45 fes16jt.pdf
FES16JT-9HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V TO-220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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FES8BT-7005HE3/45
FES8BT-7005HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP TO220AC
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FES8CT-5400HE3/45 FES(F,B)8AT_thru_8JT.pdf
FES8CT-5400HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP TO220AC
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FES8DT-12HE3/45
FES8DT-12HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
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FES8GT-5301HE3/45
FES8GT-5301HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 400V TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
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FES8GT-6HE3/45
FES8GT-6HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 400V TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
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FES8JT-13HE3/45
FES8JT-13HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V TO-220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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FES8JT-5410HE3/45
FES8JT-5410HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V TO-220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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FES8JTL-7002E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP TO220AC
Packaging: Tube
Part Status: Obsolete
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FES8JTL-7002HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP TO220AC
Packaging: Tube
Part Status: Obsolete
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MBR1035-4HE3/45
MBR1035-4HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY ARRAY TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
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MBR1045-10HE3/45 mbr10xx.pdf
MBR1045-10HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 45V TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
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MBR1060-5410HE3/45 mbr10xx.pdf
MBR1060-5410HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 60V TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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MBR1545CT-1HE3/45 MBR%28F%2CB%2915H35CT%20-%2015H60CT.pdf
MBR1545CT-1HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 45V 7.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
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MBR1545CT801HE3/45 MBR%28F%2CB%2915H35CT%20-%2015H60CT.pdf
MBR1545CT801HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 45V 7.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
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MBR1545CT802HE3/45 MBR%28F%2CB%2915H35CT%20-%2015H60CT.pdf
MBR1545CT802HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 45V 7.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
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MBR1560CT-2HE3/45 MBR%28F%2CB%2915H35CT%20-%2015H60CT.pdf
MBR1560CT-2HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 60V 7.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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MBR1635-1HE3/45 mbrf16xx.pdf
MBR1635-1HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY ARRAY TO220AB
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
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MBR1645-10HE3/45 mbrf16xx.pdf
MBR1645-10HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 45V TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 16
Voltage Coupled to Current - Reverse Leakage @ Vr: 45
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MBR1645-2HE3/45 mbrf16xx.pdf
MBR1645-2HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 45V TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 16
Voltage Coupled to Current - Reverse Leakage @ Vr: 45
Grade: Automotive
Qualification: AEC-Q101
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MBR1660-5300HE3/45 mbrf16xx.pdf
MBR1660-5300HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 60V ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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MBR2545CT-7HE3/45 mbr25xxct.pdf
MBR2545CT-7HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 45V 12.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
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MBR2545CT801HE3/45 mbr25xxct.pdf
MBR2545CT801HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 45V 12.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 30
Voltage Coupled to Current - Reverse Leakage @ Vr: 45
Grade: Automotive
Qualification: AEC-Q101
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SBL1040CT804HE3/45 bl1040ct.pdf
SBL1040CT804HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 40V 5A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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UG18DCT-5410HE3/45 UG%28F%2CB%2918ACT%20thru%20UG%28F%2CB%2918DCT.pdf
UG18DCT-5410HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 18A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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V80100PW-M3R/4W v80100pw.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY TO3PW
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VSB3200-M3/51 VSB3200.pdf
VSB3200-M3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 60 µA @ 200 V
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V1PM10-M3/H v1pm10.pdf
V1PM10-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 31085 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+29.25 грн
19+17.47 грн
100+10.96 грн
500+7.64 грн
1000+6.78 грн
2000+6.06 грн
Мінімальне замовлення: 12
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V1PM10HM3/H v1pm10.pdf
V1PM10HM3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 13754 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+30.92 грн
18+18.43 грн
100+11.57 грн
500+8.07 грн
1000+7.17 грн
2000+6.42 грн
Мінімальне замовлення: 11
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PLZ15B-G3/H plzseries.pdf
PLZ15B-G3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 500MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 11 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+24.24 грн
21+16.02 грн
Мінімальне замовлення: 14
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PLZ24A-G3/H plzseries.pdf
PLZ24A-G3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±2.5%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
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PLZ2V0A-G3/H plzseries.pdf
PLZ2V0A-G3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 1.99V 960MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±5.53%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 1.99 V
Impedance (Max) (Zzt): 140 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 120 µA @ 500 mV
Qualification: AEC-Q101
на замовлення 5367 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
19+18.39 грн
32+10.38 грн
100+6.48 грн
500+4.45 грн
1000+3.93 грн
2000+3.48 грн
Мінімальне замовлення: 19
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PLZ2V2A-G3/H plzseries.pdf
PLZ2V2A-G3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.21V 960MW DO219AC
на замовлення 17685 шт:
термін постачання 21-31 дні (днів)
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PLZ2V4A-G3/H plzseries.pdf
PLZ2V4A-G3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.43V 960MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±3.92%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.43 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 120 µA @ 1 V
на замовлення 17829 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
16+21.73 грн
23+14.17 грн
100+6.94 грн
500+5.43 грн
1000+3.77 грн
2000+3.27 грн
Мінімальне замовлення: 16
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PLZ2V7A-G3/H plzseries.pdf
PLZ2V7A-G3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.65V 960MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±3.97%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.65 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
на замовлення 6477 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
16+21.73 грн
23+14.17 грн
100+6.94 грн
500+5.43 грн
1000+3.77 грн
2000+3.27 грн
Мінімальне замовлення: 16
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PLZ30A-G3/H plzseries.pdf
PLZ30A-G3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 23 V
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PLZ33A-G3/H plzseries.pdf
PLZ33A-G3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 25 V
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PLZ33B-G3/H plzseries.pdf
PLZ33B-G3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 25 V
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PLZ36B-G3/H plzseries.pdf
PLZ36B-G3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 500MW DO219AC
на замовлення 44 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+26.75 грн
16+20.93 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
PLZ39A-G3/H plzseries.pdf
PLZ39A-G3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 500MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
на замовлення 19472 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
18+19.22 грн
29+11.35 грн
100+7.07 грн
500+4.87 грн
1000+4.29 грн
2000+3.81 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
PLZ3V3A-G3/H plzseries.pdf
PLZ3V3A-G3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.27V 960MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±3.36%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.27 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
на замовлення 30576 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
16+21.73 грн
23+14.17 грн
100+6.94 грн
500+5.43 грн
1000+3.77 грн
2000+3.27 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
PLZ3V3B-G3/H plzseries.pdf
PLZ3V3B-G3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.43V 960MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±3.07%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.43 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
на замовлення 37116 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
29+11.70 грн
45+7.16 грн
111+2.92 грн
500+2.54 грн
1000+2.15 грн
2000+2.10 грн
Мінімальне замовлення: 29
В кошику  од. на суму  грн.
PLZ3V6A-G3/H plzseries.pdf
PLZ3V6A-G3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.58V 960MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±3.36%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.58 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
на замовлення 13359 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
16+21.73 грн
23+14.17 грн
100+6.94 грн
500+5.43 грн
1000+3.77 грн
2000+3.27 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
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