Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (40634) > Сторінка 548 з 678
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VS-E5TH1506S2L-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 15A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 31 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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VS-E5TH1506S2L-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 15A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 31 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 1379 шт: термін постачання 21-31 дні (днів) |
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VS-E5TX2112S2L-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 20A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 115 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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VS-E5TX2112S2L-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 20A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 115 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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VS-E5TX1512S2L-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 15A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 96 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 15 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-E5TX1512S2L-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 15A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 96 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 15 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
на замовлення 1061 шт: термін постачання 21-31 дні (днів) |
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VS-E5TH1512S2L-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 15A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 95 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 15 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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VS-E5TH1512S2L-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 15A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 95 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 15 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
на замовлення 1154 шт: термін постачання 21-31 дні (днів) |
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VS-E5TH3006S2L-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 30A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 41 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A Current - Reverse Leakage @ Vr: 20 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-E5TH3006S2L-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 30A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 41 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A Current - Reverse Leakage @ Vr: 20 µA @ 600 V |
на замовлення 156 шт: термін постачання 21-31 дні (днів) |
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VS-E5TX3012S2L-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1200V 30A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-E5TX3012S2L-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1200V 30A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
на замовлення 1490 шт: термін постачання 21-31 дні (днів) |
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VS-E5TH3012S2L-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1200V 30A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 113 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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VS-E5TH3012S2L-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1200V 30A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 113 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
на замовлення 1036 шт: термін постачання 21-31 дні (днів) |
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VS-E5TX3006S2L-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 30A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 39 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A Current - Reverse Leakage @ Vr: 20 µA @ 600 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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VS-E5TX3006S2L-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 30A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 39 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A Current - Reverse Leakage @ Vr: 20 µA @ 600 V |
на замовлення 1591 шт: термін постачання 21-31 дні (днів) |
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VS-E5TX2106S2L-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 20A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 33 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.31 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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VS-E5TX2106S2L-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 20A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 33 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.31 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 1253 шт: термін постачання 21-31 дні (днів) |
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VS-E5TH2112S2L-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 20A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 125 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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VS-E5TH2112S2L-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 20A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 125 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
на замовлення 2139 шт: термін постачання 21-31 дні (днів) |
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VS-2N682 | Vishay General Semiconductor - Diodes Division |
Description: SCR 50V 25A TO208AAPackaging: Bulk Package / Case: TO-208AA, TO-48-3, Stud Mounting Type: Chassis, Stud Mount SCR Type: Standard Recovery Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 40 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 145A, 150A Current - On State (It (AV)) (Max): 16 A Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - On State (Vtm) (Max): 2 V Current - Off State (Max): 6.5 mA Supplier Device Package: TO-208AA (TO-48) Current - On State (It (RMS)) (Max): 25 A Voltage - Off State: 50 V |
на замовлення 91 шт: термін постачання 21-31 дні (днів) |
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BZX55B30-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 30V 500MW DO204AHPackaging: Cut Tape (CT) Tolerance: ±2% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 22 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 27904 шт: термін постачання 21-31 дні (днів) |
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BZX55B30-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 30V 500MW DO204AHPackaging: Tape & Box (TB) Tolerance: ±2% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 22 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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V20PWM45HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 20A SLIMDPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 3100pF @ 4V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A Current - Reverse Leakage @ Vr: 700 µA @ 45 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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V20PWM45HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 20A SLIMDPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 3100pF @ 4V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A Current - Reverse Leakage @ Vr: 700 µA @ 45 V Qualification: AEC-Q101 |
на замовлення 4618 шт: термін постачання 21-31 дні (днів) |
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V40PW45C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 20A SLIMDPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 20 A Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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V40PW45C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 20A SLIMDPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 20 A Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V |
на замовлення 1893 шт: термін постачання 21-31 дні (днів) |
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V20KL45-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 5.4A FLATPAKPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 3400pF @ 4V, 1MHz Current - Average Rectified (Io): 5.4A Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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V20KL45-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 5.4A FLATPAKPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 3400pF @ 4V, 1MHz Current - Average Rectified (Io): 5.4A Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3265 шт: термін постачання 21-31 дні (днів) |
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V40DM45C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 45V 20A TO263ACPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A Current - Reverse Leakage @ Vr: 1.1 mA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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V40DM45C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 45V 20A TO263ACPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A Current - Reverse Leakage @ Vr: 1.1 mA @ 45 V |
на замовлення 1864 шт: термін постачання 21-31 дні (днів) |
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V40D45C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 45V 20A TO263ACPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A Current - Reverse Leakage @ Vr: 2.5 mA @ 45 V |
на замовлення 1965 шт: термін постачання 21-31 дні (днів) |
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TZMC3V9-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.9V 500MW SOD80 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TZMC3V9-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.9V 500MW SOD80 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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VS-8ETH06S-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 8A TO263ABPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
на замовлення 8949 шт: термін постачання 21-31 дні (днів) |
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SMAJ45AHM3/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 45VWM 72.7VC DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 5.5A Voltage - Reverse Standoff (Typ): 45V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 50V Voltage - Clamping (Max) @ Ipp: 72.7V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Part Status: Discontinued at Digi-Key Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMAJ45AHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 45VWM 72.7VC DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 5.5A Voltage - Reverse Standoff (Typ): 45V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 50V Voltage - Clamping (Max) @ Ipp: 72.7V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX55B16-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 16V 500MW DO204AHTolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 12 V Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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BZX55B16-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 16V 500MW DO204AHTolerance: ±2% Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 12 V Qualification: AEC-Q101 |
на замовлення 28090 шт: термін постачання 21-31 дні (днів) |
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SMF40A-HM3-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 40VWM 64.5VC SMFPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Capacitance @ Frequency: 172pF @ 1MHz Current - Peak Pulse (10/1000µs): 3.1A Voltage - Reverse Standoff (Typ): 40V Supplier Device Package: DO-219AB (SMF) Unidirectional Channels: 1 Voltage - Breakdown (Min): 44.4V Voltage - Clamping (Max) @ Ipp: 64.5V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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SMF40A-HM3-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 40VWM 64.5VC SMFPackaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Capacitance @ Frequency: 172pF @ 1MHz Current - Peak Pulse (10/1000µs): 3.1A Voltage - Reverse Standoff (Typ): 40V Supplier Device Package: DO-219AB (SMF) Unidirectional Channels: 1 Voltage - Breakdown (Min): 44.4V Voltage - Clamping (Max) @ Ipp: 64.5V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 27565 шт: термін постачання 21-31 дні (днів) |
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SML4740AHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 10V 1W DO214ACTolerance: ±10% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-214AC (SMA) Grade: Automotive Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 7.6 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SML4740AHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 10V 1W DO214ACTolerance: ±10% Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-214AC (SMA) Grade: Automotive Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 7.6 V Qualification: AEC-Q101 |
на замовлення 1689 шт: термін постачання 21-31 дні (днів) |
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BAS16WS-G3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 75V 250MA SOD323Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAS16WS-G3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 75V 250MA SOD323Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TZX24B-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 24V 500MW DO204AHPackaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 70 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 19 V Qualification: AEC-Q101 |
на замовлення 17855 шт: термін постачання 21-31 дні (днів) |
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TZX24B-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 24V 500MW DO204AHPackaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 70 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 19 V Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SA2G-E3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 2A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Capacitance @ Vr, F: 11pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 3 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SA2G-E3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 2A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Capacitance @ Vr, F: 11pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 3 µA @ 400 V |
на замовлення 10344 шт: термін постачання 21-31 дні (днів) |
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SA2J-E3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 2A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Capacitance @ Vr, F: 11pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V |
на замовлення 5400 шт: термін постачання 21-31 дні (днів) |
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SA2J-E3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 2A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Capacitance @ Vr, F: 11pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V |
на замовлення 7187 шт: термін постачання 21-31 дні (днів) |
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V40PW22CHM3/I | Vishay General Semiconductor - Diodes Division |
Description: 40A, 200V, SLIMDPAK, DUAL TRENCH |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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V40PW22CHM3/I | Vishay General Semiconductor - Diodes Division |
Description: 40A, 200V, SLIMDPAK, DUAL TRENCH |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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V20PW22CHM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 200V SLIMDPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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V20PW22CHM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 200V SLIMDPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4652 шт: термін постачання 21-31 дні (днів) |
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V40PW22C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTTKY 200V SLIMDPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 970 mV @ 20 A Current - Reverse Leakage @ Vr: 250 µA @ 200 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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V40PW22C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTTKY 200V SLIMDPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 970 mV @ 20 A Current - Reverse Leakage @ Vr: 250 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 3703 шт: термін постачання 21-31 дні (днів) |
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V20PW22C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 200V SLIMDPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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V20PW22C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 200V SLIMDPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3622 шт: термін постачання 21-31 дні (днів) |
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SM6S12AHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 12VWM 19.9VC DO218AB |
товару немає в наявності |
В кошику од. на суму грн. |
| VS-E5TH1506S2L-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 54.43 грн |
| VS-E5TH1506S2L-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 1379 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 129.55 грн |
| 10+ | 103.75 грн |
| 100+ | 82.58 грн |
| VS-E5TX2112S2L-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 70.38 грн |
| VS-E5TX2112S2L-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 167.16 грн |
| 10+ | 134.17 грн |
| 100+ | 106.78 грн |
| VS-E5TX1512S2L-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 96 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 96 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-E5TX1512S2L-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 96 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 96 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 1061 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 158.80 грн |
| 10+ | 127.01 грн |
| 100+ | 101.09 грн |
| VS-E5TH1512S2L-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 66.63 грн |
| VS-E5TH1512S2L-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 1154 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 169.67 грн |
| 10+ | 136.02 грн |
| 100+ | 108.20 грн |
| VS-E5TH3006S2L-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-E5TH3006S2L-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
на замовлення 156 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 191.40 грн |
| 10+ | 125.72 грн |
| 100+ | 90.29 грн |
| VS-E5TX3012S2L-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-E5TX3012S2L-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 1490 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 224.83 грн |
| 10+ | 151.23 грн |
| 100+ | 112.57 грн |
| VS-E5TH3012S2L-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 113 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 113 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 100.60 грн |
| VS-E5TH3012S2L-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 113 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 113 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 1036 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 274.98 грн |
| 10+ | 176.50 грн |
| 100+ | 131.63 грн |
| VS-E5TX3006S2L-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Description: DIODE STANDARD 600V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 66.04 грн |
| VS-E5TX3006S2L-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Description: DIODE STANDARD 600V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
на замовлення 1591 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 188.06 грн |
| 10+ | 125.64 грн |
| 100+ | 92.53 грн |
| VS-E5TX2106S2L-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.31 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.31 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 55.63 грн |
| VS-E5TX2106S2L-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.31 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.31 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 1253 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 164.65 грн |
| 10+ | 108.41 грн |
| 100+ | 80.65 грн |
| VS-E5TH2112S2L-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 125 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 125 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 77.35 грн |
| 1600+ | 71.85 грн |
| VS-E5TH2112S2L-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 125 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 125 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 2139 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 242.38 грн |
| 10+ | 151.71 грн |
| 100+ | 104.98 грн |
| VS-2N682 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 50V 25A TO208AA
Packaging: Bulk
Package / Case: TO-208AA, TO-48-3, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 145A, 150A
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 2 V
Current - Off State (Max): 6.5 mA
Supplier Device Package: TO-208AA (TO-48)
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 50 V
Description: SCR 50V 25A TO208AA
Packaging: Bulk
Package / Case: TO-208AA, TO-48-3, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 145A, 150A
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 2 V
Current - Off State (Max): 6.5 mA
Supplier Device Package: TO-208AA (TO-48)
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 50 V
на замовлення 91 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 833.30 грн |
| 10+ | 578.93 грн |
| BZX55B30-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 30V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 27904 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 37+ | 9.19 грн |
| 55+ | 5.96 грн |
| 121+ | 2.68 грн |
| 500+ | 2.38 грн |
| 1000+ | 2.18 грн |
| 2000+ | 2.15 грн |
| 5000+ | 2.08 грн |
| BZX55B30-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 30V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| V20PWM45HM3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3100pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A
Current - Reverse Leakage @ Vr: 700 µA @ 45 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3100pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A
Current - Reverse Leakage @ Vr: 700 µA @ 45 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| V20PWM45HM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3100pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A
Current - Reverse Leakage @ Vr: 700 µA @ 45 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3100pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A
Current - Reverse Leakage @ Vr: 700 µA @ 45 V
Qualification: AEC-Q101
на замовлення 4618 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 93.61 грн |
| 10+ | 60.36 грн |
| 100+ | 42.03 грн |
| 500+ | 31.73 грн |
| 1000+ | 29.20 грн |
| 2000+ | 27.05 грн |
| V40PW45C-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V
Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V
товару немає в наявності
В кошику
од. на суму грн.
| V40PW45C-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V
Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V
на замовлення 1893 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 111.16 грн |
| 10+ | 87.41 грн |
| 100+ | 68.00 грн |
| 500+ | 54.10 грн |
| 1000+ | 44.07 грн |
| V20KL45-M3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 5.4A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3400pF @ 4V, 1MHz
Current - Average Rectified (Io): 5.4A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 45V 5.4A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3400pF @ 4V, 1MHz
Current - Average Rectified (Io): 5.4A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 20.41 грн |
| 3000+ | 19.29 грн |
| V20KL45-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 5.4A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3400pF @ 4V, 1MHz
Current - Average Rectified (Io): 5.4A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 45V 5.4A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3400pF @ 4V, 1MHz
Current - Average Rectified (Io): 5.4A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3265 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 76.89 грн |
| 10+ | 51.43 грн |
| 100+ | 36.36 грн |
| 500+ | 26.56 грн |
| V40DM45C-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 20A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.1 mA @ 45 V
Description: DIODE ARR SCHOTT 45V 20A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.1 mA @ 45 V
товару немає в наявності
В кошику
од. на суму грн.
| V40DM45C-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 20A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.1 mA @ 45 V
Description: DIODE ARR SCHOTT 45V 20A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.1 mA @ 45 V
на замовлення 1864 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 151.28 грн |
| 10+ | 121.29 грн |
| 100+ | 96.53 грн |
| 500+ | 76.65 грн |
| 1000+ | 65.04 грн |
| V40D45C-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 20A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 45 V
Description: DIODE ARR SCHOTT 45V 20A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 45 V
на замовлення 1965 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 152.95 грн |
| 10+ | 122.50 грн |
| 100+ | 97.44 грн |
| 500+ | 77.38 грн |
| 1000+ | 65.65 грн |
| TZMC3V9-GS18 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 500MW SOD80
Description: DIODE ZENER 3.9V 500MW SOD80
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.57 грн |
| TZMC3V9-GS18 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 500MW SOD80
Description: DIODE ZENER 3.9V 500MW SOD80
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 19.22 грн |
| 21+ | 15.61 грн |
| 100+ | 8.29 грн |
| 500+ | 5.12 грн |
| 1000+ | 3.48 грн |
| 2000+ | 3.14 грн |
| 5000+ | 2.68 грн |
| VS-8ETH06S-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE STANDARD 600V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 8949 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 86.09 грн |
| 50+ | 33.95 грн |
| 100+ | 33.26 грн |
| 500+ | 27.24 грн |
| 1000+ | 26.97 грн |
| 2000+ | 25.71 грн |
| 5000+ | 24.11 грн |
| SMAJ45AHM3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 45VWM 72.7VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q101
Description: TVS DIODE 45VWM 72.7VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q101
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| SMAJ45AHE3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 45VWM 72.7VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 45VWM 72.7VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| BZX55B16-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
Description: DIODE ZENER 16V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.30 грн |
| BZX55B16-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO204AH
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
Description: DIODE ZENER 16V 500MW DO204AH
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
на замовлення 28090 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 37+ | 9.19 грн |
| 53+ | 6.12 грн |
| 125+ | 2.58 грн |
| 500+ | 2.28 грн |
| 1000+ | 2.15 грн |
| 2000+ | 2.12 грн |
| 5000+ | 2.05 грн |
| SMF40A-HM3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40VWM 64.5VC SMF
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 172pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.1A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 40VWM 64.5VC SMF
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 172pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.1A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.33 грн |
| SMF40A-HM3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40VWM 64.5VC SMF
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 172pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.1A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 40VWM 64.5VC SMF
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 172pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.1A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 27565 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 29.25 грн |
| 15+ | 22.13 грн |
| 100+ | 13.30 грн |
| 500+ | 11.56 грн |
| 1000+ | 7.86 грн |
| SML4740AHE3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 1W DO214AC
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 7.6 V
Qualification: AEC-Q101
Description: DIODE ZENER 10V 1W DO214AC
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 7.6 V
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| SML4740AHE3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 1W DO214AC
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 7.6 V
Qualification: AEC-Q101
Description: DIODE ZENER 10V 1W DO214AC
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 7.6 V
Qualification: AEC-Q101
на замовлення 1689 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 65.19 грн |
| 10+ | 39.28 грн |
| 100+ | 25.41 грн |
| 500+ | 18.25 грн |
| BAS16WS-G3-18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 75V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE STANDARD 75V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
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од. на суму грн.
| BAS16WS-G3-18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 75V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE STANDARD 75V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 11.70 грн |
| 44+ | 7.32 грн |
| 100+ | 5.89 грн |
| 500+ | 4.15 грн |
| 1000+ | 3.56 грн |
| 2000+ | 3.36 грн |
| 5000+ | 2.71 грн |
| TZX24B-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 19 V
Qualification: AEC-Q101
Description: DIODE ZENER 24V 500MW DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 19 V
Qualification: AEC-Q101
на замовлення 17855 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 37+ | 9.19 грн |
| 51+ | 6.36 грн |
| 116+ | 2.78 грн |
| 500+ | 2.48 грн |
| 1000+ | 2.22 грн |
| 2000+ | 2.19 грн |
| 5000+ | 2.12 грн |
| TZX24B-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 19 V
Qualification: AEC-Q101
Description: DIODE ZENER 24V 500MW DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 19 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 1.66 грн |
| SA2G-E3/5AT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 400 V
Description: DIODE STANDARD 400V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| SA2G-E3/5AT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 400 V
Description: DIODE STANDARD 400V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 400 V
на замовлення 10344 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 20.06 грн |
| 26+ | 12.72 грн |
| 100+ | 9.01 грн |
| 500+ | 6.26 грн |
| 1000+ | 4.12 грн |
| 2000+ | 3.83 грн |
| SA2J-E3/61T |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Description: DIODE STANDARD 600V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
на замовлення 5400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1800+ | 3.28 грн |
| 3600+ | 3.06 грн |
| 5400+ | 3.04 грн |
| SA2J-E3/61T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Description: DIODE STANDARD 600V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
на замовлення 7187 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 17.55 грн |
| 29+ | 11.19 грн |
| 100+ | 9.01 грн |
| 500+ | 6.26 грн |
| V40PW22CHM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 40A, 200V, SLIMDPAK, DUAL TRENCH
Description: 40A, 200V, SLIMDPAK, DUAL TRENCH
товару немає в наявності
В кошику
од. на суму грн.
| V40PW22CHM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 40A, 200V, SLIMDPAK, DUAL TRENCH
Description: 40A, 200V, SLIMDPAK, DUAL TRENCH
товару немає в наявності
В кошику
од. на суму грн.
| V20PW22CHM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 200V SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 200V SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| V20PW22CHM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 200V SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 200V SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4652 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 180.53 грн |
| 10+ | 118.31 грн |
| 100+ | 84.77 грн |
| 500+ | 65.61 грн |
| 1000+ | 61.06 грн |
| 2000+ | 59.56 грн |
| V40PW22C-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTTKY 200V SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 20 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTTKY 200V SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 20 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| V40PW22C-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTTKY 200V SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 20 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTTKY 200V SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 20 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Qualification: AEC-Q101
на замовлення 3703 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 193.07 грн |
| 10+ | 130.39 грн |
| 100+ | 92.48 грн |
| 500+ | 72.32 грн |
| V20PW22C-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 200V SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 200V SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| V20PW22C-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 200V SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 200V SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3622 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 112.83 грн |
| 10+ | 73.72 грн |
| 100+ | 51.77 грн |
| 500+ | 39.37 грн |
| 1000+ | 36.35 грн |
| 2000+ | 33.79 грн |
| SM6S12AHE3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 19.9VC DO218AB
Description: TVS DIODE 12VWM 19.9VC DO218AB
товару немає в наявності
В кошику
од. на суму грн.












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