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SMAJ18AHM3_A/H SMAJ18AHM3_A/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 18VWM 29.2VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3260 шт:
термін постачання 21-31 дні (днів)
8+43.28 грн
13+25.71 грн
100+16.36 грн
500+11.58 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
VS-63CPT100 VS-63CPT100 Vishay General Semiconductor - Diodes Division Description: DIODE ARR SCHOT 100V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
товару немає в наявності
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SMBJ28AHM3_B/H SMBJ28AHM3_B/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 28VWM 45.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.2A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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AS4PJHM3_A/H AS4PJHM3_A/H Vishay General Semiconductor - Diodes Division as4pd.pdf Description: DIODE AVALANCHE 600V 2.4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1500+52.14 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
AS4PJHM3_A/H AS4PJHM3_A/H Vishay General Semiconductor - Diodes Division as4pd.pdf Description: DIODE AVALANCHE 600V 2.4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 4470 шт:
термін постачання 21-31 дні (днів)
4+107.79 грн
10+92.47 грн
100+72.09 грн
500+55.89 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SE40PJHM3_A/I SE40PJHM3_A/I Vishay General Semiconductor - Diodes Division se40pb.pdf Description: DIODE GEN PURP 600V 2.4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.2 µs
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 6500 шт:
термін постачання 21-31 дні (днів)
6500+18.19 грн
Мінімальне замовлення: 6500
В кошику  од. на суму  грн.
SE40PJHM3_A/I SE40PJHM3_A/I Vishay General Semiconductor - Diodes Division se40pb.pdf Description: DIODE GEN PURP 600V 2.4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.2 µs
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 6500 шт:
термін постачання 21-31 дні (днів)
6+55.53 грн
10+45.53 грн
100+34.00 грн
500+25.07 грн
1000+19.38 грн
2000+17.67 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
V8PA22-M3/H V8PA22-M3/H Vishay General Semiconductor - Diodes Division v8pa22.pdf Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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V8PA22-M3/H V8PA22-M3/H Vishay General Semiconductor - Diodes Division v8pa22.pdf Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2821 шт:
термін постачання 21-31 дні (днів)
5+65.33 грн
10+41.52 грн
100+33.42 грн
500+24.26 грн
1000+21.82 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
V8PA22HM3/I V8PA22HM3/I Vishay General Semiconductor - Diodes Division v8pa22.pdf Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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V8PA22HM3/I V8PA22HM3/I Vishay General Semiconductor - Diodes Division v8pa22.pdf Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8219 шт:
термін постачання 21-31 дні (днів)
4+91.46 грн
10+54.97 грн
100+36.12 грн
500+26.29 грн
1000+23.85 грн
2000+21.79 грн
5000+19.24 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
V5NM63HM3/I V5NM63HM3/I Vishay General Semiconductor - Diodes Division v5nm63.pdf Description: 5A, 60V, DFN3820A TRENCH SKY REC
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
14000+13.35 грн
Мінімальне замовлення: 14000
В кошику  од. на суму  грн.
V5NM63HM3/I V5NM63HM3/I Vishay General Semiconductor - Diodes Division v5nm63.pdf Description: 5A, 60V, DFN3820A TRENCH SKY REC
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
8+40.83 грн
10+33.42 грн
100+24.96 грн
500+18.40 грн
1000+14.22 грн
2000+12.97 грн
5000+11.93 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V5NL63HM3/I V5NL63HM3/I Vishay General Semiconductor - Diodes Division v5nl63.pdf Description: 5A, 60V, DFN3820A TRENCH SKY REC
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 840pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
14000+13.35 грн
Мінімальне замовлення: 14000
В кошику  од. на суму  грн.
V5NL63HM3/I V5NL63HM3/I Vishay General Semiconductor - Diodes Division v5nl63.pdf Description: 5A, 60V, DFN3820A TRENCH SKY REC
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 840pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
8+40.83 грн
10+33.42 грн
100+24.96 грн
500+18.40 грн
1000+14.22 грн
2000+12.97 грн
5000+11.93 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V5NL63-M3/I V5NL63-M3/I Vishay General Semiconductor - Diodes Division v5nl63.pdf Description: 5A, 60V, DFN3820A TRENCH SKY REC
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 840pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
14000+11.88 грн
Мінімальне замовлення: 14000
В кошику  од. на суму  грн.
V5NL63-M3/I V5NL63-M3/I Vishay General Semiconductor - Diodes Division v5nl63.pdf Description: 5A, 60V, DFN3820A TRENCH SKY REC
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 840pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
10+35.93 грн
11+29.72 грн
100+22.21 грн
500+16.38 грн
1000+12.66 грн
2000+11.54 грн
5000+10.62 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
V5NM63-M3/I V5NM63-M3/I Vishay General Semiconductor - Diodes Division v5nm63.pdf Description: 5A, 60V, DFN3820A TRENCH SKY REC
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
14000+11.88 грн
Мінімальне замовлення: 14000
В кошику  од. на суму  грн.
V5NM63-M3/I V5NM63-M3/I Vishay General Semiconductor - Diodes Division v5nm63.pdf Description: 5A, 60V, DFN3820A TRENCH SKY REC
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
10+35.93 грн
11+29.72 грн
100+22.21 грн
500+16.38 грн
1000+12.66 грн
2000+11.54 грн
5000+10.62 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
RGF1G-1HE3/67A Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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GF1G-9HE3_A/H GF1G-9HE3_A/H Vishay General Semiconductor - Diodes Division GF1x.pdf Description: DIODE GEN PURP 400V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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GF1G-9HE3_A/I GF1G-9HE3_A/I Vishay General Semiconductor - Diodes Division GF1x.pdf Description: DIODE GEN PURP 400V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
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RGF1G-1HE3_A/H Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
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SMC3K54CAHM3_A/H SMC3K54CAHM3_A/H Vishay General Semiconductor - Diodes Division smc3k10cahm3_a_thru_smc3k120cahm3_a.pdf Description: TVS DIODE 54VWM 87.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34.4A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
850+35.78 грн
Мінімальне замовлення: 850
В кошику  од. на суму  грн.
SMC3K54CAHM3_A/H SMC3K54CAHM3_A/H Vishay General Semiconductor - Diodes Division smc3k10cahm3_a_thru_smc3k120cahm3_a.pdf Description: TVS DIODE 54VWM 87.1VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34.4A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1605 шт:
термін постачання 21-31 дні (днів)
4+99.62 грн
10+73.29 грн
100+51.36 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SS2PH5HM3/84A SS2PH5HM3/84A Vishay General Semiconductor - Diodes Division ss2ph5.pdf Description: DIODE SCHOTTKY 50V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+5.23 грн
6000+4.86 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SS2PH5HM3/84A SS2PH5HM3/84A Vishay General Semiconductor - Diodes Division ss2ph5.pdf Description: DIODE SCHOTTKY 50V 2A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 17770 шт:
термін постачання 21-31 дні (днів)
10+32.66 грн
14+22.57 грн
100+11.38 грн
500+9.46 грн
1000+7.36 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BZT52C3V0-HE3_A-18 BZT52C3V0-HE3_A-18 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 3V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BZT52C3V0-HE3_A-08 BZT52C3V0-HE3_A-08 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 3V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
VS-10ETS08S-M3 VS-10ETS08S-M3 Vishay General Semiconductor - Diodes Division vs-10ets08s.pdf Description: DIODE GEN PURP 800V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
на замовлення 6817 шт:
термін постачання 21-31 дні (днів)
3+111.87 грн
50+56.88 грн
100+51.59 грн
500+42.74 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
VB30100C-E3/8W VB30100C-E3/8W Vishay General Semiconductor - Diodes Division v30100c.pdf Description: DIODE ARR SCHOT 100V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
800+66.29 грн
1600+60.09 грн
2400+57.64 грн
4000+52.48 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
VB30100C-E3/8W VB30100C-E3/8W Vishay General Semiconductor - Diodes Division v30100c.pdf Description: DIODE ARR SCHOT 100V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
на замовлення 4922 шт:
термін постачання 21-31 дні (днів)
2+168.22 грн
10+110.95 грн
100+85.45 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
VS-16TTS08S-M3 VS-16TTS08S-M3 Vishay General Semiconductor - Diodes Division vs-16tts08s-m3.pdf Description: SCR 800V 16A TO-263AB (D2PAK)
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz
Current - On State (It (AV)) (Max): 10 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.4 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-263AB (D2PAK)
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
на замовлення 6710 шт:
термін постачання 21-31 дні (днів)
2+200.07 грн
10+124.64 грн
100+85.89 грн
500+65.05 грн
1000+60.06 грн
2000+55.85 грн
5000+53.31 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
VS-MBRB20100CTR-M3 VS-MBRB20100CTR-M3 Vishay General Semiconductor - Diodes Division vs-mbrb20ct-m3.pdf Description: DIODE ARR SCHOT 100V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3800 шт:
термін постачання 21-31 дні (днів)
3+149.44 грн
10+93.03 грн
100+68.71 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MB10H100CTHE3_B/I MB10H100CTHE3_B/I Vishay General Semiconductor - Diodes Division aztronic Description: DIODE ARR SCHOTT 100V 5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 5 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
MBR10H100CT-E3/4W MBR10H100CT-E3/4W Vishay General Semiconductor - Diodes Division mbr10hxxct.pdf Description: DIODE ARR SCHOTT 100V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 5 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
M10H100CTHE3_A/P M10H100CTHE3_A/P Vishay General Semiconductor - Diodes Division mbr10hxxct.pdf Description: DIODE ARR SCHOTT 100V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
T6N36AHM3/I T6N36AHM3/I Vishay General Semiconductor - Diodes Division t6n12athrut6n51a.pdf Description: LOW-PROFILE VERSION 600 W UNI-DI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
14000+9.57 грн
Мінімальне замовлення: 14000
В кошику  од. на суму  грн.
T6N36AHM3/I T6N36AHM3/I Vishay General Semiconductor - Diodes Division t6n12athrut6n51a.pdf Description: LOW-PROFILE VERSION 600 W UNI-DI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
10+32.66 грн
12+26.50 грн
100+18.43 грн
500+13.51 грн
1000+10.98 грн
2000+9.81 грн
5000+9.16 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
MSMP11A-M3/89A MSMP11A-M3/89A Vishay General Semiconductor - Diodes Division msmp6a.pdf Description: TVS DIODE 11VWM 18.2VC MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.2A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: MicroSMP (DO-219AD)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 150W
Power Line Protection: No
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)
4500+4.40 грн
9000+3.26 грн
Мінімальне замовлення: 4500
В кошику  од. на суму  грн.
MSMP11A-M3/89A MSMP11A-M3/89A Vishay General Semiconductor - Diodes Division msmp6a.pdf Description: TVS DIODE 11VWM 18.2VC MICROSMP
Packaging: Cut Tape (CT)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.2A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: MicroSMP (DO-219AD)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 150W
Power Line Protection: No
на замовлення 21395 шт:
термін постачання 21-31 дні (днів)
13+26.13 грн
19+17.30 грн
100+8.45 грн
500+6.61 грн
1000+4.59 грн
2000+3.98 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
SMC5K51A-M3/I SMC5K51A-M3/I Vishay General Semiconductor - Diodes Division smc5k10a.pdf Description: TVS DIODE 51VWM 82.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 60.7A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
SMC5K51A-M3/I SMC5K51A-M3/I Vishay General Semiconductor - Diodes Division smc5k10a.pdf Description: TVS DIODE 51VWM 82.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 60.7A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
на замовлення 885 шт:
термін постачання 21-31 дні (днів)
4+83.29 грн
10+53.94 грн
100+37.46 грн
500+28.19 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
1.5KE68AHE3_B/C 1.5KE68AHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 58.1VWM 92VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
1N6300AHE3_B/C 1N6300AHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 136VWM 219VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.8A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BYWB29-100HE3_A/P BYWB29-100HE3_A/P Vishay General Semiconductor - Diodes Division byw29200.pdf Description: DIODE GEN PURP 100V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
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BYWB29-100HE3_A/I BYWB29-100HE3_A/I Vishay General Semiconductor - Diodes Division byw29200.pdf Description: DIODE GEN PURP 100V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
1.5KE8.2CAHE3_B/C 1.5KE8.2CAHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 7VWM 12.1VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 130A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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1.5KE82CAHE3_B/C 1.5KE82CAHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 70.1VWM 113VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.9A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MB30H100CTHE3_B/P MB30H100CTHE3_B/P Vishay General Semiconductor - Diodes Division mb30hxxct.pdf Description: DIODE ARR SCHOT 100V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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MB30H100CTHE3_B/I MB30H100CTHE3_B/I Vishay General Semiconductor - Diodes Division mb30hxxct.pdf Description: DIODE ARR SCHOT 100V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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SMBJ5.0AHM3_B/H SMBJ5.0AHM3_B/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 5VWM 9.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ5.0AHM3_B/I SMBJ5.0AHM3_B/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 5VWM 9.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ5.0AHE3_B/I SMBJ5.0AHE3_B/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 5VWM 9.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SS10PH45-M3/87A SS10PH45-M3/87A Vishay General Semiconductor - Diodes Division ss10ph45.pdf Description: DIODE SCHOTTKY 45V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 270pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
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SS10PH45-M3/87A SS10PH45-M3/87A Vishay General Semiconductor - Diodes Division ss10ph45.pdf Description: DIODE SCHOTTKY 45V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 270pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
на замовлення 5276 шт:
термін постачання 21-31 дні (днів)
8+46.55 грн
10+35.62 грн
100+25.85 грн
500+18.60 грн
1000+15.53 грн
2000+15.24 грн
Мінімальне замовлення: 8
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SMBJ100AHE3_B/I SMBJ100AHE3_B/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 100VWM 162VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ100AHM3_B/I SMBJ100AHM3_B/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 100VWM 162VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ100AHM3_B/H SMBJ100AHM3_B/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 100VWM 162VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ100AHE3_B/H SMBJ100AHE3_B/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 100VWM 162VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJ18AHM3_A/H smaj50a.pdf
SMAJ18AHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 29.2VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3260 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+43.28 грн
13+25.71 грн
100+16.36 грн
500+11.58 грн
Мінімальне замовлення: 8
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VS-63CPT100
VS-63CPT100
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
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SMBJ28AHM3_B/H smbj.pdf
SMBJ28AHM3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28VWM 45.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.2A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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AS4PJHM3_A/H as4pd.pdf
AS4PJHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2.4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+52.14 грн
Мінімальне замовлення: 1500
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AS4PJHM3_A/H as4pd.pdf
AS4PJHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2.4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 4470 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+107.79 грн
10+92.47 грн
100+72.09 грн
500+55.89 грн
Мінімальне замовлення: 4
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SE40PJHM3_A/I se40pb.pdf
SE40PJHM3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2.4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.2 µs
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 6500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6500+18.19 грн
Мінімальне замовлення: 6500
В кошику  од. на суму  грн.
SE40PJHM3_A/I se40pb.pdf
SE40PJHM3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2.4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.2 µs
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 6500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+55.53 грн
10+45.53 грн
100+34.00 грн
500+25.07 грн
1000+19.38 грн
2000+17.67 грн
Мінімальне замовлення: 6
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V8PA22-M3/H v8pa22.pdf
V8PA22-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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V8PA22-M3/H v8pa22.pdf
V8PA22-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2821 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+65.33 грн
10+41.52 грн
100+33.42 грн
500+24.26 грн
1000+21.82 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
V8PA22HM3/I v8pa22.pdf
V8PA22HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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V8PA22HM3/I v8pa22.pdf
V8PA22HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8219 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+91.46 грн
10+54.97 грн
100+36.12 грн
500+26.29 грн
1000+23.85 грн
2000+21.79 грн
5000+19.24 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
V5NM63HM3/I v5nm63.pdf
V5NM63HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 5A, 60V, DFN3820A TRENCH SKY REC
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14000+13.35 грн
Мінімальне замовлення: 14000
В кошику  од. на суму  грн.
V5NM63HM3/I v5nm63.pdf
V5NM63HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 5A, 60V, DFN3820A TRENCH SKY REC
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+40.83 грн
10+33.42 грн
100+24.96 грн
500+18.40 грн
1000+14.22 грн
2000+12.97 грн
5000+11.93 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V5NL63HM3/I v5nl63.pdf
V5NL63HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 5A, 60V, DFN3820A TRENCH SKY REC
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 840pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14000+13.35 грн
Мінімальне замовлення: 14000
В кошику  од. на суму  грн.
V5NL63HM3/I v5nl63.pdf
V5NL63HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 5A, 60V, DFN3820A TRENCH SKY REC
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 840pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+40.83 грн
10+33.42 грн
100+24.96 грн
500+18.40 грн
1000+14.22 грн
2000+12.97 грн
5000+11.93 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V5NL63-M3/I v5nl63.pdf
V5NL63-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 5A, 60V, DFN3820A TRENCH SKY REC
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 840pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14000+11.88 грн
Мінімальне замовлення: 14000
В кошику  од. на суму  грн.
V5NL63-M3/I v5nl63.pdf
V5NL63-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 5A, 60V, DFN3820A TRENCH SKY REC
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 840pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+35.93 грн
11+29.72 грн
100+22.21 грн
500+16.38 грн
1000+12.66 грн
2000+11.54 грн
5000+10.62 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
V5NM63-M3/I v5nm63.pdf
V5NM63-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 5A, 60V, DFN3820A TRENCH SKY REC
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14000+11.88 грн
Мінімальне замовлення: 14000
В кошику  од. на суму  грн.
V5NM63-M3/I v5nm63.pdf
V5NM63-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 5A, 60V, DFN3820A TRENCH SKY REC
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+35.93 грн
11+29.72 грн
100+22.21 грн
500+16.38 грн
1000+12.66 грн
2000+11.54 грн
5000+10.62 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
RGF1G-1HE3/67A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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GF1G-9HE3_A/H GF1x.pdf
GF1G-9HE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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GF1G-9HE3_A/I GF1x.pdf
GF1G-9HE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
RGF1G-1HE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
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SMC3K54CAHM3_A/H smc3k10cahm3_a_thru_smc3k120cahm3_a.pdf
SMC3K54CAHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 54VWM 87.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34.4A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
850+35.78 грн
Мінімальне замовлення: 850
В кошику  од. на суму  грн.
SMC3K54CAHM3_A/H smc3k10cahm3_a_thru_smc3k120cahm3_a.pdf
SMC3K54CAHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 54VWM 87.1VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34.4A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1605 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+99.62 грн
10+73.29 грн
100+51.36 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SS2PH5HM3/84A ss2ph5.pdf
SS2PH5HM3/84A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+5.23 грн
6000+4.86 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SS2PH5HM3/84A ss2ph5.pdf
SS2PH5HM3/84A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 2A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 17770 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+32.66 грн
14+22.57 грн
100+11.38 грн
500+9.46 грн
1000+7.36 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BZT52C3V0-HE3_A-18 bzt52_series.pdf
BZT52C3V0-HE3_A-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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BZT52C3V0-HE3_A-08 bzt52_series.pdf
BZT52C3V0-HE3_A-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
VS-10ETS08S-M3 vs-10ets08s.pdf
VS-10ETS08S-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
на замовлення 6817 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+111.87 грн
50+56.88 грн
100+51.59 грн
500+42.74 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
VB30100C-E3/8W v30100c.pdf
VB30100C-E3/8W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+66.29 грн
1600+60.09 грн
2400+57.64 грн
4000+52.48 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
VB30100C-E3/8W v30100c.pdf
VB30100C-E3/8W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
на замовлення 4922 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+168.22 грн
10+110.95 грн
100+85.45 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
VS-16TTS08S-M3 vs-16tts08s-m3.pdf
VS-16TTS08S-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 16A TO-263AB (D2PAK)
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz
Current - On State (It (AV)) (Max): 10 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.4 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-263AB (D2PAK)
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
на замовлення 6710 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+200.07 грн
10+124.64 грн
100+85.89 грн
500+65.05 грн
1000+60.06 грн
2000+55.85 грн
5000+53.31 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
VS-MBRB20100CTR-M3 vs-mbrb20ct-m3.pdf
VS-MBRB20100CTR-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+149.44 грн
10+93.03 грн
100+68.71 грн
Мінімальне замовлення: 3
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MB10H100CTHE3_B/I aztronic
MB10H100CTHE3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 5 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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MBR10H100CT-E3/4W mbr10hxxct.pdf
MBR10H100CT-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 5 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
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M10H100CTHE3_A/P mbr10hxxct.pdf
M10H100CTHE3_A/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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T6N36AHM3/I t6n12athrut6n51a.pdf
T6N36AHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: LOW-PROFILE VERSION 600 W UNI-DI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14000+9.57 грн
Мінімальне замовлення: 14000
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T6N36AHM3/I t6n12athrut6n51a.pdf
T6N36AHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: LOW-PROFILE VERSION 600 W UNI-DI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+32.66 грн
12+26.50 грн
100+18.43 грн
500+13.51 грн
1000+10.98 грн
2000+9.81 грн
5000+9.16 грн
Мінімальне замовлення: 10
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MSMP11A-M3/89A msmp6a.pdf
MSMP11A-M3/89A
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 11VWM 18.2VC MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.2A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: MicroSMP (DO-219AD)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 150W
Power Line Protection: No
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4500+4.40 грн
9000+3.26 грн
Мінімальне замовлення: 4500
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MSMP11A-M3/89A msmp6a.pdf
MSMP11A-M3/89A
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 11VWM 18.2VC MICROSMP
Packaging: Cut Tape (CT)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.2A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: MicroSMP (DO-219AD)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 150W
Power Line Protection: No
на замовлення 21395 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+26.13 грн
19+17.30 грн
100+8.45 грн
500+6.61 грн
1000+4.59 грн
2000+3.98 грн
Мінімальне замовлення: 13
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SMC5K51A-M3/I smc5k10a.pdf
SMC5K51A-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 51VWM 82.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 60.7A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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SMC5K51A-M3/I smc5k10a.pdf
SMC5K51A-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 51VWM 82.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 60.7A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
на замовлення 885 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+83.29 грн
10+53.94 грн
100+37.46 грн
500+28.19 грн
Мінімальне замовлення: 4
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1.5KE68AHE3_B/C 15ke.pdf
1.5KE68AHE3_B/C
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 58.1VWM 92VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1N6300AHE3_B/C 15ke.pdf
1N6300AHE3_B/C
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 136VWM 219VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.8A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BYWB29-100HE3_A/P byw29200.pdf
BYWB29-100HE3_A/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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BYWB29-100HE3_A/I byw29200.pdf
BYWB29-100HE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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1.5KE8.2CAHE3_B/C 15ke.pdf
1.5KE8.2CAHE3_B/C
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7VWM 12.1VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 130A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5KE82CAHE3_B/C 15ke.pdf
1.5KE82CAHE3_B/C
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 70.1VWM 113VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.9A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MB30H100CTHE3_B/P mb30hxxct.pdf
MB30H100CTHE3_B/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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MB30H100CTHE3_B/I mb30hxxct.pdf
MB30H100CTHE3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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SMBJ5.0AHM3_B/H smbj.pdf
SMBJ5.0AHM3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 9.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ5.0AHM3_B/I smbj.pdf
SMBJ5.0AHM3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 9.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ5.0AHE3_B/I smbj.pdf
SMBJ5.0AHE3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 9.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SS10PH45-M3/87A ss10ph45.pdf
SS10PH45-M3/87A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 270pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
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SS10PH45-M3/87A ss10ph45.pdf
SS10PH45-M3/87A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 270pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
на замовлення 5276 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+46.55 грн
10+35.62 грн
100+25.85 грн
500+18.60 грн
1000+15.53 грн
2000+15.24 грн
Мінімальне замовлення: 8
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SMBJ100AHE3_B/I smbj.pdf
SMBJ100AHE3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 162VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ100AHM3_B/I smbj.pdf
SMBJ100AHM3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 162VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ100AHM3_B/H smbj.pdf
SMBJ100AHM3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 162VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ100AHE3_B/H smbj.pdf
SMBJ100AHE3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 162VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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