Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (40028) > Сторінка 66 з 668
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BZW04P58B-E3/73 | Vishay General Semiconductor - Diodes Division |
 Description: TVS DIODE 58.1VWM 92VC DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZW04P5V8-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5.8VWM 10.5VC DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZW04P5V8B-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5.8VWM 10.5VC DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZW04P5V8BHE3/73 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5.8VWM 10.5VC DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZW04P64B-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 64.1VWM 103VC DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZW04P70B-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 70.1VWM 113VC DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 3.5A Voltage - Reverse Standoff (Typ): 70.1V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 77.9V Voltage - Clamping (Max) @ Ipp: 113V Power - Peak Pulse: 400W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZW04P70BHE3/73 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 70.1VWM 113VC DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 3.5A Voltage - Reverse Standoff (Typ): 70.1V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 77.9V Voltage - Clamping (Max) @ Ipp: 113V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZW04P85HE3/73 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 85.5VWM 137VC DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZW04P8V5BHE3/73 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 8.55VWM 14.5VC DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZW04P9V4HE3/73 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 9.4VWM 15.6VC DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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DGP15-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.5KV 1.5A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1500 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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EGP10A-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 1A DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP10AHE3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 22pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP10B-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP10BHE3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 22pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP10C-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 22pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP10CHE3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 22pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP10D-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 22pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP10DHE3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 22pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP10F-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 300V 1A DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP10FHE3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 300V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP10G-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP10GHE3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP20B-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 2A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 70pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
на замовлення 3994 шт: термін постачання 21-31 дні (днів) |
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EGP20BHE3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 2A DO204AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP20C-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 2A DO204AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP20CHE3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 2A DO204AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP20D-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 2A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 70pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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EGP20DHE3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 2A DO204AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP20G-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 2A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP20GHE3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 2A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP30B-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 3A GP20 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP30BHE3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 3A GP20 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP30C-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 3A GP20 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP30CHE3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 3A GP20 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP30D-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 3A GP20 Packaging: Tape & Box (TB) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: GP20 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP30DHE3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 3A GP20 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP30F-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 300V 3A GP20 Packaging: Tape & Box (TB) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: GP20 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP30FHE3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 300V 3A GP20 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP30G-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 3A GP20 Packaging: Tape & Box (TB) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: GP20 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP30GHE3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 3A GP20 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP50A-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 50V 5A GP20 Packaging: Tape & Box (TB) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 95pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: GP20 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP50AHE3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 5A GP20 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP50B-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 5A GP20 Packaging: Tape & Box (TB) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 95pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: GP20 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP50BHE3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 5A GP20 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP50C-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 150V 5A GP20 Packaging: Tape & Box (TB) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 95pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: GP20 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP50CHE3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 5A GP20 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP50D-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 5A GP20 Packaging: Tape & Box (TB) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 95pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: GP20 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP50DHE3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 5A GP20 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP50F-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 300V 5A GP20 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP50FHE3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 300V 5A GP20 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP50G-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 5A GP20 Packaging: Tape & Box (TB) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 75pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: GP20 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EGP50GHE3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 5A GP20 Packaging: Tape & Box (TB) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 75pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: GP20 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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FGP50B-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 5A GP20 Packaging: Tape & Box (TB) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 100pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: GP20 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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FGP50BHE3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 5A GP20 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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FGP50C-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 5A GP20 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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FGP50CHE3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 5A GP20 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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FGP50D-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 5A GP20 Packaging: Tape & Box (TB) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 100pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: GP20 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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FGP50DHE3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 5A GP20 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| GHR16-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.6KV 500MA R1 |
товару немає в наявності |
В кошику од. на суму грн. |
| BZW04P58B-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 58.1VWM 92VC DO204AL
Description: TVS DIODE 58.1VWM 92VC DO204AL
товару немає в наявності
В кошику
од. на суму грн.
| BZW04P5V8-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
товару немає в наявності
В кошику
од. на суму грн.
| BZW04P5V8B-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
товару немає в наявності
В кошику
од. на суму грн.
| BZW04P5V8BHE3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
товару немає в наявності
В кошику
од. на суму грн.
| BZW04P64B-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 64.1VWM 103VC DO204AL
Description: TVS DIODE 64.1VWM 103VC DO204AL
товару немає в наявності
В кошику
од. на суму грн.
| BZW04P70B-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 70.1VWM 113VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.5A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 70.1VWM 113VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.5A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 400W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| BZW04P70BHE3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 70.1VWM 113VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 3.5A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 70.1VWM 113VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 3.5A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BZW04P85HE3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 85.5VWM 137VC DO204AL
Description: TVS DIODE 85.5VWM 137VC DO204AL
товару немає в наявності
В кошику
од. на суму грн.
| BZW04P8V5BHE3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.55VWM 14.5VC DO204AL
Description: TVS DIODE 8.55VWM 14.5VC DO204AL
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В кошику
од. на суму грн.
| BZW04P9V4HE3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 9.4VWM 15.6VC DO204AL
Description: TVS DIODE 9.4VWM 15.6VC DO204AL
товару немає в наявності
В кошику
од. на суму грн.
| DGP15-E3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.5KV 1.5A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
Description: DIODE GP 1.5KV 1.5A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 21.89 грн |
| EGP10A-E3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO204AL
Description: DIODE GEN PURP 50V 1A DO204AL
товару немає в наявності
В кошику
од. на суму грн.
| EGP10AHE3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE GEN PURP 50V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| EGP10B-E3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO204AL
Description: DIODE GEN PURP 100V 1A DO204AL
товару немає в наявності
В кошику
од. на суму грн.
| EGP10BHE3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| EGP10C-E3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE GEN PURP 150V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
товару немає в наявності
В кошику
од. на суму грн.
| EGP10CHE3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE GEN PURP 150V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
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В кошику
од. на суму грн.
| EGP10D-E3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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В кошику
од. на суму грн.
| EGP10DHE3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| EGP10F-E3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 1A DO204AL
Description: DIODE GEN PURP 300V 1A DO204AL
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В кошику
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| EGP10FHE3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE GEN PURP 300V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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| EGP10G-E3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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| EGP10GHE3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| EGP20B-E3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 3994 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 26.28 грн |
| EGP20BHE3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO204AC
Description: DIODE GEN PURP 100V 2A DO204AC
товару немає в наявності
В кошику
од. на суму грн.
| EGP20C-E3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 2A DO204AC
Description: DIODE GEN PURP 150V 2A DO204AC
товару немає в наявності
В кошику
од. на суму грн.
| EGP20CHE3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 2A DO204AC
Description: DIODE GEN PURP 150V 2A DO204AC
товару немає в наявності
В кошику
од. на суму грн.
| EGP20D-E3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 27.36 грн |
| 6000+ | 25.09 грн |
| 10000+ | 23.93 грн |
| EGP20DHE3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO204AC
Description: DIODE GEN PURP 200V 2A DO204AC
товару немає в наявності
В кошику
од. на суму грн.
| EGP20G-E3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| EGP20GHE3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| EGP30B-E3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A GP20
Description: DIODE GEN PURP 100V 3A GP20
товару немає в наявності
В кошику
од. на суму грн.
| EGP30BHE3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A GP20
Description: DIODE GEN PURP 100V 3A GP20
товару немає в наявності
В кошику
од. на суму грн.
| EGP30C-E3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 3A GP20
Description: DIODE GEN PURP 150V 3A GP20
товару немає в наявності
В кошику
од. на суму грн.
| EGP30CHE3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 3A GP20
Description: DIODE GEN PURP 150V 3A GP20
товару немає в наявності
В кошику
од. на суму грн.
| EGP30D-E3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 3A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 3A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| EGP30DHE3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3A GP20
Description: DIODE GEN PURP 200V 3A GP20
товару немає в наявності
В кошику
од. на суму грн.
| EGP30F-E3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 300V 3A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE STANDARD 300V 3A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товару немає в наявності
В кошику
од. на суму грн.
| EGP30FHE3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 3A GP20
Description: DIODE GEN PURP 300V 3A GP20
товару немає в наявності
В кошику
од. на суму грн.
| EGP30G-E3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 3A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| EGP30GHE3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A GP20
Description: DIODE GEN PURP 400V 3A GP20
товару немає в наявності
В кошику
од. на суму грн.
| EGP50A-E3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE STANDARD 50V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| EGP50AHE3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 5A GP20
Description: DIODE GEN PURP 50V 5A GP20
товару немає в наявності
В кошику
од. на суму грн.
| EGP50B-E3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE STANDARD 100V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| EGP50BHE3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 5A GP20
Description: DIODE GEN PURP 100V 5A GP20
товару немає в наявності
В кошику
од. на суму грн.
| EGP50C-E3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 150V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE STANDARD 150V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
товару немає в наявності
В кошику
од. на суму грн.
| EGP50CHE3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 5A GP20
Description: DIODE GEN PURP 150V 5A GP20
товару немає в наявності
В кошику
од. на суму грн.
| EGP50D-E3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| EGP50DHE3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 5A GP20
Description: DIODE GEN PURP 200V 5A GP20
товару немає в наявності
В кошику
од. на суму грн.
| EGP50F-E3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 5A GP20
Description: DIODE GEN PURP 300V 5A GP20
товару немає в наявності
В кошику
од. на суму грн.
| EGP50FHE3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 5A GP20
Description: DIODE GEN PURP 300V 5A GP20
товару немає в наявності
В кошику
од. на суму грн.
| EGP50G-E3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| EGP50GHE3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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В кошику
од. на суму грн.
| FGP50B-E3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE STANDARD 100V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| FGP50BHE3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 5A GP20
Description: DIODE GEN PURP 100V 5A GP20
товару немає в наявності
В кошику
од. на суму грн.
| FGP50C-E3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 5A GP20
Description: DIODE GEN PURP 150V 5A GP20
товару немає в наявності
В кошику
од. на суму грн.
| FGP50CHE3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 5A GP20
Description: DIODE GEN PURP 150V 5A GP20
товару немає в наявності
В кошику
од. на суму грн.
| FGP50D-E3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 5A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| FGP50DHE3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 5A GP20
Description: DIODE GEN PURP 200V 5A GP20
товару немає в наявності
В кошику
од. на суму грн.
| GHR16-E3/73 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.6KV 500MA R1
Description: DIODE GEN PURP 1.6KV 500MA R1
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од. на суму грн.