| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SMBJ13D-M3/I | VISHAY |
 Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 14.6V; 28.3A; unidirectional; DO214AA,SMB; SMBJ Type of diode: TVS Mounting: SMD Breakdown voltage: 14.6V Manufacturer series: SMBJ Max. forward impulse current: 28.3A Peak pulse power dissipation: 0.6kW Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 13V Kind of package: 13 inch reel; tape Semiconductor structure: unidirectional Leakage current: 0.5µA Case: DO214AA; SMB |
товару немає в наявності |
Мінімальне замовлення: 9600 шт В кошику од. на суму грн. | ||||||||||
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RTO020F47R00JTE3 | VISHAY |
Category: Power resistors Description: Resistor: thick film; 47Ω; THT; TO220; 20W; ±5%; 250V; -55÷155°C Type of resistor: thick film Resistance: 47Ω Mounting: THT Power: 20W Tolerance: ±5% Operating voltage: 250V Operating temperature: -55...155°C Resistor features: needs additional heatsink Recommended heatsink: thermal resistance 0,87K/W Case: TO220 Power without heatsink: 2W |
на замовлення 21 шт: термін постачання 14-30 дні (днів) |
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SI7615ADN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -35A Pulsed drain current: -80A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 4.4mΩ Mounting: SMD Gate charge: 183nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1584 шт: термін постачання 14-30 дні (днів) |
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SMF28A-HM3_A08 | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 200W; 31.1÷34.4V; 4.4A; unidirectional; DO219AB,SMF Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 4.4A Semiconductor structure: unidirectional Case: DO219AB; SMF Mounting: SMD Leakage current: 0.1µA Kind of package: 7 inch reel; tape Technology: eSMP® Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||
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SMF28A-M3-18 | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 200W; 31.1÷34.4V; 4.4A; unidirectional; DO219AB,SMF Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 4.4A Semiconductor structure: unidirectional Case: DO219AB; SMF Mounting: SMD Leakage current: 0.1µA Kind of package: 13 inch reel; tape Technology: eSMP® |
товару немає в наявності |
Мінімальне замовлення: 50000 шт В кошику од. на суму грн. | ||||||||||
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SMF28A-E3-18 | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.2kW; 31.1V; DO219AB,SMF; eSMP®; Ch: 1; 227pF; -65÷175°C Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Case: DO219AB; SMF Mounting: SMD Leakage current: 0.1µA Operating temperature: -65...175°C Technology: eSMP® Capacitance: 227pF Number of channels: 1 |
на замовлення 40000 шт: термін постачання 14-30 дні (днів) |
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SMCJ7.0CA-E3/9AT | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 7.78÷8.6V; 125A; bidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 7V Breakdown voltage: 7.78...8.6V Max. forward impulse current: 125A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 0.2mA Features of semiconductor devices: glass passivated Kind of package: 13 inch reel; tape Manufacturer series: SMCJ Technology: TransZorb® |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | ||||||||||
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SMCJ7.0CA-E3/57T | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 7.78÷8.6V; 125A; bidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 7V Breakdown voltage: 7.78...8.6V Max. forward impulse current: 125A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 0.2mA Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape Manufacturer series: SMCJ Technology: TransZorb® |
товару немає в наявності |
Мінімальне замовлення: 1700 шт В кошику од. на суму грн. | ||||||||||
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SMCJ7.0CAHE3_A/H | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 7.78÷8.6V; 125A; bidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 7V Breakdown voltage: 7.78...8.6V Max. forward impulse current: 125A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 0.2mA Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape Manufacturer series: SMCJ Technology: TransZorb® Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3400 шт В кошику од. на суму грн. | ||||||||||
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P4SMA200A-E3/5A | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 190÷210V; 1.1A; unidirectional; DO214AC,SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 171V Breakdown voltage: 190...210V Max. forward impulse current: 1.1A Semiconductor structure: unidirectional Case: DO214AC; SMA Mounting: SMD Leakage current: 1µA Technology: TransZorb® Manufacturer series: P4SMA |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||
| P6KE170A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 600W; 162V; 2.6A; unidirectional; DO15,DO204AC; P6KE Type of diode: TVS Max. off-state voltage: 145V Breakdown voltage: 162V Max. forward impulse current: 2.6A Semiconductor structure: unidirectional Case: DO15; DO204AC Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated Kind of package: 13 inch reel Technology: TransZorb® |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||
| P6KE170AHE3/54 | VISHAY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 600W; 162V; 2.6A; unidirectional; DO15,DO204AC; P6KE Type of diode: TVS Max. off-state voltage: 145V Breakdown voltage: 162V Max. forward impulse current: 2.6A Semiconductor structure: unidirectional Case: DO15; DO204AC Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated Kind of package: 13 inch reel Technology: TransZorb® Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||
| P6KE170CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 162V; 2.6A; bidirectional; DO15,DO204AC; 600W; P6KE Type of diode: TVS Max. off-state voltage: 145V Breakdown voltage: 162V Max. forward impulse current: 2.6A Semiconductor structure: bidirectional Case: DO15; DO204AC Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated Kind of package: 13 inch reel Technology: TransZorb® |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||
| P6KE130CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 124V; 3.4A; bidirectional; DO15,DO204AC; 600W; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 111V Breakdown voltage: 124V Semiconductor structure: bidirectional Case: DO15; DO204AC Mounting: THT Leakage current: 1µA Manufacturer series: P6KE Kind of package: 13 inch reel Max. forward impulse current: 3.4A Technology: TransZorb® Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||
| P6KE130CAHE3/54 | VISHAY |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 124V; 3.4A; bidirectional; DO15,DO204AC; 600W; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 111V Breakdown voltage: 124V Semiconductor structure: bidirectional Case: DO15; DO204AC Mounting: THT Leakage current: 1µA Manufacturer series: P6KE Kind of package: 13 inch reel Max. forward impulse current: 3.4A Technology: TransZorb® Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||
  |
BFC233840335 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; X2; 3.3uF; 800VDC; 300VAC; THT; ±20% Mounting: THT Tolerance: ±20% Terminal pitch: 27.5mm Kind of capacitor: X2 Type of capacitor: polypropylene Capacitance: 3.3µF Operating voltage: 300V AC; 800V DC |
на замовлення 48 шт: термін постачання 14-30 дні (днів) |
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SI7336ADP-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 5.4W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Pulsed drain current: 70A Power dissipation: 5.4W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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SI7336ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 5.4W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Pulsed drain current: 70A Power dissipation: 5.4W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| SMBJ13D-M3/I |
|
Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 14.6V; 28.3A; unidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 14.6V
Manufacturer series: SMBJ
Max. forward impulse current: 28.3A
Peak pulse power dissipation: 0.6kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 13V
Kind of package: 13 inch reel; tape
Semiconductor structure: unidirectional
Leakage current: 0.5µA
Case: DO214AA; SMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 14.6V; 28.3A; unidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 14.6V
Manufacturer series: SMBJ
Max. forward impulse current: 28.3A
Peak pulse power dissipation: 0.6kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 13V
Kind of package: 13 inch reel; tape
Semiconductor structure: unidirectional
Leakage current: 0.5µA
Case: DO214AA; SMB
товару немає в наявності
Мінімальне замовлення: 9600 шт
В кошику
од. на суму грн.
| RTO020F47R00JTE3 |
|
Виробник: VISHAY
Category: Power resistors
Description: Resistor: thick film; 47Ω; THT; TO220; 20W; ±5%; 250V; -55÷155°C
Type of resistor: thick film
Resistance: 47Ω
Mounting: THT
Power: 20W
Tolerance: ±5%
Operating voltage: 250V
Operating temperature: -55...155°C
Resistor features: needs additional heatsink
Recommended heatsink: thermal resistance 0,87K/W
Case: TO220
Power without heatsink: 2W
Category: Power resistors
Description: Resistor: thick film; 47Ω; THT; TO220; 20W; ±5%; 250V; -55÷155°C
Type of resistor: thick film
Resistance: 47Ω
Mounting: THT
Power: 20W
Tolerance: ±5%
Operating voltage: 250V
Operating temperature: -55...155°C
Resistor features: needs additional heatsink
Recommended heatsink: thermal resistance 0,87K/W
Case: TO220
Power without heatsink: 2W
на замовлення 21 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 622.64 грн |
| SI7615ADN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 183nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 183nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1584 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 59.26 грн |
| 10+ | 43.85 грн |
| 50+ | 36.06 грн |
| 100+ | 32.08 грн |
| 500+ | 27.51 грн |
| SMF28A-HM3_A08 |
|
Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 31.1÷34.4V; 4.4A; unidirectional; DO219AB,SMF
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 4.4A
Semiconductor structure: unidirectional
Case: DO219AB; SMF
Mounting: SMD
Leakage current: 0.1µA
Kind of package: 7 inch reel; tape
Technology: eSMP®
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 31.1÷34.4V; 4.4A; unidirectional; DO219AB,SMF
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 4.4A
Semiconductor structure: unidirectional
Case: DO219AB; SMF
Mounting: SMD
Leakage current: 0.1µA
Kind of package: 7 inch reel; tape
Technology: eSMP®
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| SMF28A-M3-18 |
|
Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 31.1÷34.4V; 4.4A; unidirectional; DO219AB,SMF
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 4.4A
Semiconductor structure: unidirectional
Case: DO219AB; SMF
Mounting: SMD
Leakage current: 0.1µA
Kind of package: 13 inch reel; tape
Technology: eSMP®
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 31.1÷34.4V; 4.4A; unidirectional; DO219AB,SMF
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 4.4A
Semiconductor structure: unidirectional
Case: DO219AB; SMF
Mounting: SMD
Leakage current: 0.1µA
Kind of package: 13 inch reel; tape
Technology: eSMP®
товару немає в наявності
Мінімальне замовлення: 50000 шт
В кошику
од. на суму грн.
| SMF28A-E3-18 |
|
Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 31.1V; DO219AB,SMF; eSMP®; Ch: 1; 227pF; -65÷175°C
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Case: DO219AB; SMF
Mounting: SMD
Leakage current: 0.1µA
Operating temperature: -65...175°C
Technology: eSMP®
Capacitance: 227pF
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 31.1V; DO219AB,SMF; eSMP®; Ch: 1; 227pF; -65÷175°C
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Case: DO219AB; SMF
Mounting: SMD
Leakage current: 0.1µA
Operating temperature: -65...175°C
Technology: eSMP®
Capacitance: 227pF
Number of channels: 1
на замовлення 40000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 7.02 грн |
| SMCJ7.0CA-E3/9AT |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 7.78÷8.6V; 125A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.6V
Max. forward impulse current: 125A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 0.2mA
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 7.78÷8.6V; 125A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.6V
Max. forward impulse current: 125A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 0.2mA
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику
од. на суму грн.
| SMCJ7.0CA-E3/57T |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 7.78÷8.6V; 125A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.6V
Max. forward impulse current: 125A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 0.2mA
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 7.78÷8.6V; 125A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.6V
Max. forward impulse current: 125A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 0.2mA
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
товару немає в наявності
Мінімальне замовлення: 1700 шт
В кошику
од. на суму грн.
| SMCJ7.0CAHE3_A/H |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 7.78÷8.6V; 125A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.6V
Max. forward impulse current: 125A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 0.2mA
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 7.78÷8.6V; 125A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.6V
Max. forward impulse current: 125A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 0.2mA
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3400 шт
В кошику
од. на суму грн.
| P4SMA200A-E3/5A |
|
Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 190÷210V; 1.1A; unidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 1.1A
Semiconductor structure: unidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Technology: TransZorb®
Manufacturer series: P4SMA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 190÷210V; 1.1A; unidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 1.1A
Semiconductor structure: unidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Technology: TransZorb®
Manufacturer series: P4SMA
товару немає в наявності
Мінімальне замовлення: 7500 шт
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од. на суму грн.
| P6KE170A-E3/54 |
|
Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 162V; 2.6A; unidirectional; DO15,DO204AC; P6KE
Type of diode: TVS
Max. off-state voltage: 145V
Breakdown voltage: 162V
Max. forward impulse current: 2.6A
Semiconductor structure: unidirectional
Case: DO15; DO204AC
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Technology: TransZorb®
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 162V; 2.6A; unidirectional; DO15,DO204AC; P6KE
Type of diode: TVS
Max. off-state voltage: 145V
Breakdown voltage: 162V
Max. forward impulse current: 2.6A
Semiconductor structure: unidirectional
Case: DO15; DO204AC
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Technology: TransZorb®
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| P6KE170AHE3/54 |
|
Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 162V; 2.6A; unidirectional; DO15,DO204AC; P6KE
Type of diode: TVS
Max. off-state voltage: 145V
Breakdown voltage: 162V
Max. forward impulse current: 2.6A
Semiconductor structure: unidirectional
Case: DO15; DO204AC
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Technology: TransZorb®
Application: automotive industry
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 162V; 2.6A; unidirectional; DO15,DO204AC; P6KE
Type of diode: TVS
Max. off-state voltage: 145V
Breakdown voltage: 162V
Max. forward impulse current: 2.6A
Semiconductor structure: unidirectional
Case: DO15; DO204AC
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Technology: TransZorb®
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| P6KE170CA-E3/54 |
|
Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 162V; 2.6A; bidirectional; DO15,DO204AC; 600W; P6KE
Type of diode: TVS
Max. off-state voltage: 145V
Breakdown voltage: 162V
Max. forward impulse current: 2.6A
Semiconductor structure: bidirectional
Case: DO15; DO204AC
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Technology: TransZorb®
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 162V; 2.6A; bidirectional; DO15,DO204AC; 600W; P6KE
Type of diode: TVS
Max. off-state voltage: 145V
Breakdown voltage: 162V
Max. forward impulse current: 2.6A
Semiconductor structure: bidirectional
Case: DO15; DO204AC
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Technology: TransZorb®
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| P6KE130CA-E3/54 |
|
Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 124V; 3.4A; bidirectional; DO15,DO204AC; 600W; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 111V
Breakdown voltage: 124V
Semiconductor structure: bidirectional
Case: DO15; DO204AC
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Kind of package: 13 inch reel
Max. forward impulse current: 3.4A
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 124V; 3.4A; bidirectional; DO15,DO204AC; 600W; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 111V
Breakdown voltage: 124V
Semiconductor structure: bidirectional
Case: DO15; DO204AC
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Kind of package: 13 inch reel
Max. forward impulse current: 3.4A
Technology: TransZorb®
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| P6KE130CAHE3/54 |
|
Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 124V; 3.4A; bidirectional; DO15,DO204AC; 600W; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 111V
Breakdown voltage: 124V
Semiconductor structure: bidirectional
Case: DO15; DO204AC
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Kind of package: 13 inch reel
Max. forward impulse current: 3.4A
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 124V; 3.4A; bidirectional; DO15,DO204AC; 600W; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 111V
Breakdown voltage: 124V
Semiconductor structure: bidirectional
Case: DO15; DO204AC
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Kind of package: 13 inch reel
Max. forward impulse current: 3.4A
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| BFC233840335 |
|
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 3.3uF; 800VDC; 300VAC; THT; ±20%
Mounting: THT
Tolerance: ±20%
Terminal pitch: 27.5mm
Kind of capacitor: X2
Type of capacitor: polypropylene
Capacitance: 3.3µF
Operating voltage: 300V AC; 800V DC
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 3.3uF; 800VDC; 300VAC; THT; ±20%
Mounting: THT
Tolerance: ±20%
Terminal pitch: 27.5mm
Kind of capacitor: X2
Type of capacitor: polypropylene
Capacitance: 3.3µF
Operating voltage: 300V AC; 800V DC
на замовлення 48 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1702.92 грн |
| 5+ | 1402.67 грн |
| 10+ | 1113.16 грн |
| 25+ | 897.30 грн |
| SI7336ADP-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 5.4W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 70A
Power dissipation: 5.4W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 5.4W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 70A
Power dissipation: 5.4W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SI7336ADP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 5.4W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 70A
Power dissipation: 5.4W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 5.4W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 70A
Power dissipation: 5.4W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.