| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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VS-36MT60 | VISHAY |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT Type of bridge rectifier: three-phase Max. off-state voltage: 0.6kV Load current: 35A Max. forward impulse current: 475A Electrical mounting: THT Version: square Max. forward voltage: 1.19V Leads: connectors FASTON Leads dimensions: 6.3x0.8mm Case: D-63 Kind of package: bulk |
на замовлення 14 шт: термін постачання 14-30 дні (днів) |
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SIHB12N60E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Power dissipation: 147W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SIHB12N60ET1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 27A Power dissipation: 147W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SIHF12N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 27A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SIHP12N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 27A Power dissipation: 147W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRFP22N50APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Power dissipation: 277W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement |
на замовлення 136 шт: термін постачання 14-30 дні (днів) |
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IRFP250PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 19A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement |
на замовлення 237 шт: термін постачання 14-30 дні (днів) |
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IRFP260PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 29A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhancement |
на замовлення 829 шт: термін постачання 14-30 дні (днів) |
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IRFP264PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 24A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: THT Gate charge: 0.21µC Kind of package: tube Kind of channel: enhancement |
на замовлення 272 шт: термін постачання 14-30 дні (днів) |
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1.5KE6.8CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 143A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 2mA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated Technology: TransZorb® Kind of package: 13 inch reel |
на замовлення 479 шт: термін постачання 14-30 дні (днів) |
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SS34-E3/57T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 7 inch reel Mounting: SMD Kind of package: 7 inch reel Semiconductor structure: single diode Case: SMC Type of diode: Schottky rectifying Max. forward impulse current: 100A Manufacturer standard package: 850pcs. Max. forward voltage: 0.5V Max. off-state voltage: 40V Load current: 3A |
на замовлення 1722 шт: термін постачання 14-30 дні (днів) |
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| SS34-E3/9AT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel Mounting: SMD Kind of package: 13 inch reel Semiconductor structure: single diode Leakage current: 20mA Case: SMC Type of diode: Schottky rectifying Max. forward impulse current: 100A Manufacturer standard package: 3500pcs. Max. forward voltage: 0.5V Max. off-state voltage: 40V Load current: 3A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MBR20100CT-E3/4W | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.75V Kind of package: tube Manufacturer standard package: 50pcs. Max. forward impulse current: 150A Heatsink thickness: 1.14...1.39mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2N7002K-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.19A Pulsed drain current: 0.8A Power dissipation: 0.14W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 1912 шт: термін постачання 14-30 дні (днів) |
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SIHB15N65E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 38A Power dissipation: 34W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SIHF15N65E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 38A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SIHP15N65E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 38A Power dissipation: 34W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SS16-E3/5AT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 13 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 40A Kind of package: 13 inch reel Leakage current: 5mA Manufacturer standard package: 7500pcs. |
на замовлення 1936 шт: термін постачання 14-30 дні (днів) |
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SS16-E3/61T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 40A Kind of package: 7 inch reel Manufacturer standard package: 1800pcs. |
на замовлення 3602 шт: термін постачання 14-30 дні (днів) |
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SS16HE3_B/H | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 40A Kind of package: 7 inch reel Application: automotive industry Manufacturer standard package: 1800pcs. |
на замовлення 4717 шт: термін постачання 14-30 дні (днів) |
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IRF840PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
на замовлення 3572 шт: термін постачання 14-30 дні (днів) |
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BZX55B10-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode |
на замовлення 18280 шт: термін постачання 14-30 дні (днів) |
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GRC00JG3321E00L | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 3300uF; 25VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 3.3mF Operating voltage: 25V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 16x25mm |
на замовлення 87 шт: термін постачання 14-30 дні (днів) |
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IRF530PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Pulsed drain current: 56A Power dissipation: 88W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: THT Gate charge: 26nC Kind of channel: enhancement Kind of package: tube |
на замовлення 2905 шт: термін постачання 14-30 дні (днів) |
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IRF530SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Pulsed drain current: 56A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 26nC Kind of channel: enhancement Kind of package: tube |
на замовлення 493 шт: термін постачання 14-30 дні (днів) |
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BZX55C10-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 10V; DO35; single diode; Ammo Pack Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack |
на замовлення 4829 шт: термін постачання 14-30 дні (днів) |
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BZX55C12-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 12V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 17340 шт: термін постачання 14-30 дні (днів) |
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MUR460-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 4A; 13 inch reel; Ifsm: 150A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: 13 inch reel Max. forward impulse current: 150A Case: DO201AD Max. forward voltage: 1.05V Reverse recovery time: 50ns Quantity in set/package: 1400pcs. |
на замовлення 932 шт: термін постачання 14-30 дні (днів) |
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1N4007-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; 13 inch reel Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: DO41 Kind of package: 13 inch reel Max. forward voltage: 1.1V Capacitance: 15pF Manufacturer standard package: 5500pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N4007-E3/73 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ammo Pack Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: DO41 Kind of package: Ammo Pack Max. forward voltage: 1.1V Capacitance: 15pF |
на замовлення 13250 шт: термін постачання 14-30 дні (днів) |
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293D476X0025D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±20%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 25V DC Mounting: SMD Tolerance: ±20% Operating temperature: -55...125°C Case: D Case - inch: 2917 Case - mm: 7343 Manufacturer series: Tantamount |
на замовлення 6 шт: термін постачання 14-30 дні (днів) |
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293D476X9025D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 25V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case: D Case - inch: 2917 Case - mm: 7343 Manufacturer series: Tantamount |
на замовлення 3186 шт: термін постачання 14-30 дні (днів) |
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VJ1206Y104KXACW1BC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; MLCC; 100nF; 50V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 0.1µF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
на замовлення 96850 шт: термін постачання 14-30 дні (днів) |
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1N4148-TAP | VISHAY |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.15A; Ifsm: 2A; DO35; Ammo Pack; 8ns Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.15A Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Max. forward impulse current: 2A Case: DO35 Kind of package: Ammo Pack Reverse recovery time: 8ns Max. load current: 0.5A |
на замовлення 16264 шт: термін постачання 14-30 дні (днів) |
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SIHA20N50E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SIHB20N50E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: SMD Gate charge: 92nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SIHG20N50E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement |
на замовлення 135 шт: термін постачання 14-30 дні (днів) |
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| SiHH20N50E-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Pulsed drain current: 53A Power dissipation: 174W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 147mΩ Mounting: SMD Gate charge: 84nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SIHP20N50E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SIHJ7N65E-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 17A Power dissipation: 96W Case: PowerPAK® SO8 Gate-source voltage: ±30V On-state resistance: 598mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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CRCW12060000Z0TABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 0Ω; SMD; 1206; 0.25W; ±5%; 200V; -55÷155°C Type of resistor: thick film Resistance: 0Ω Power: 0.25W Operating temperature: -55...155°C Operating voltage: 200V Case - inch: 1206 Case - mm: 3216 Tolerance: ±5% Mounting: SMD |
на замовлення 97840 шт: термін постачання 14-30 дні (днів) |
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| BAV70-E3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.25A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 50µA Power dissipation: 0.35W Kind of package: 7 inch reel Manufacturer standard package: 3000pcs. Features of semiconductor devices: small signal |
на замовлення 20305 шт: термін постачання 14-30 дні (днів) |
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BAV70-G3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.25A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 50µA Power dissipation: 0.35W Kind of package: 7 inch reel Features of semiconductor devices: small signal Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LL4148-GS08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: MiniMELF; SOD80 Max. forward voltage: 0.86V Max. load current: 0.5A Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: 7 inch reel Manufacturer standard package: 2500pcs. |
на замовлення 1037493 шт: термін постачання 14-30 дні (днів) |
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LL4148-GS18 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: MiniMELF; SOD80 Max. forward voltage: 0.86V Max. load current: 0.5A Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: 13 inch reel Manufacturer standard package: 10000pcs. |
на замовлення 9959 шт: термін постачання 14-30 дні (днів) |
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GRC00JS4721E00L | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 4700uF; 25VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 4.7mF Operating voltage: 25V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 16x31.5mm |
на замовлення 355 шт: термін постачання 14-30 дні (днів) |
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293D106X0050E2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±20%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 10µF Operating voltage: 50V DC Tolerance: ±20% Operating temperature: -55...125°C Manufacturer series: Tantamount Case: E Case - inch: 2917 Case - mm: 7343 |
на замовлення 142 шт: термін постачання 14-30 дні (днів) |
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293D106X9050D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 10uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 10µF Operating voltage: 50V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case: D Case - inch: 2917 Case - mm: 7343 Manufacturer series: Tantamount |
на замовлення 8066 шт: термін постачання 14-30 дні (днів) |
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293D106X9050E2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 10µF Operating voltage: 50V DC Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case: E Case - inch: 2917 Case - mm: 7343 |
на замовлення 17 шт: термін постачання 14-30 дні (днів) |
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293D475X0050D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±20%; -55÷125°C Type of capacitor: tantalum Capacitance: 4.7µF Operating voltage: 50V DC Mounting: SMD Tolerance: ±20% Operating temperature: -55...125°C Manufacturer series: Tantamount Case: D Case - inch: 2917 Case - mm: 7343 |
на замовлення 327 шт: термін постачання 14-30 дні (днів) |
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293D475X9050D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 4.7µF Operating voltage: 50V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Roll diameter max.: 178mm Case: D Case - inch: 2917 Case - mm: 7343 Manufacturer series: Tantamount |
на замовлення 976 шт: термін постачання 14-30 дні (днів) |
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293D475X9025B2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 4.7uF; 25VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 4.7µF Operating voltage: 25V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case: B Case - inch: 1411 Case - mm: 3528 Manufacturer series: Tantamount |
на замовлення 570 шт: термін постачання 14-30 дні (днів) |
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293D475X9025C2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 4.7uF; 25VDC; SMD; C; 2312; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 4.7µF Operating voltage: 25V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Roll diameter max.: 178mm Case: C Case - inch: 2312 Case - mm: 6032 Manufacturer series: Tantamount |
на замовлення 4348 шт: термін постачання 14-30 дні (днів) |
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SIHA240N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 31W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 30A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SIHD240N60E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 78W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 30A Power dissipation: 78W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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293D476X0016D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±20%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 47µF Operating voltage: 16V DC Tolerance: ±20% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - inch: 2917 Case - mm: 7343 Case: D |
на замовлення 55 шт: термін постачання 14-30 дні (днів) |
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293D476X9010B2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 10V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case: B Case - inch: 1411 Case - mm: 3528 Manufacturer series: Tantamount |
на замовлення 9567 шт: термін постачання 14-30 дні (днів) |
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293D476X9010C2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 10V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case: C Case - inch: 2312 Case - mm: 6032 Manufacturer series: Tantamount |
на замовлення 1510 шт: термін постачання 14-30 дні (днів) |
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293D476X9016C2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 47µF Operating voltage: 16V DC Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - inch: 2312 Case - mm: 6032 Case: C |
на замовлення 4136 шт: термін постачання 14-30 дні (днів) |
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293D476X9016D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 47µF Operating voltage: 16V DC Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - inch: 2917 Case - mm: 7343 Case: D |
на замовлення 8613 шт: термін постачання 14-30 дні (днів) |
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| VS-36MT60 |
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Виробник: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 475A
Electrical mounting: THT
Version: square
Max. forward voltage: 1.19V
Leads: connectors FASTON
Leads dimensions: 6.3x0.8mm
Case: D-63
Kind of package: bulk
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 475A
Electrical mounting: THT
Version: square
Max. forward voltage: 1.19V
Leads: connectors FASTON
Leads dimensions: 6.3x0.8mm
Case: D-63
Kind of package: bulk
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1130.94 грн |
| 5+ | 959.79 грн |
| SIHB12N60E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHB12N60ET1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHF12N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHP12N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IRFP22N50APBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 277W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 277W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 136 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 345.14 грн |
| 10+ | 284.51 грн |
| 25+ | 272.79 грн |
| 50+ | 262.75 грн |
| 100+ | 242.67 грн |
| 125+ | 235.97 грн |
| IRFP250PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 237 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 310.90 грн |
| 5+ | 235.97 грн |
| 10+ | 211.71 грн |
| 25+ | 184.93 грн |
| 50+ | 168.19 грн |
| 100+ | 153.13 грн |
| 125+ | 148.95 грн |
| IRFP260PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 29A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 29A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 829 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 395.60 грн |
| 10+ | 215.89 грн |
| 25+ | 199.99 грн |
| 50+ | 187.44 грн |
| 100+ | 174.89 грн |
| 125+ | 172.38 грн |
| 375+ | 160.66 грн |
| IRFP264PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 272 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 480.31 грн |
| 10+ | 310.45 грн |
| 25+ | 276.14 грн |
| 100+ | 231.79 грн |
| 125+ | 225.09 грн |
| 250+ | 207.52 грн |
| 1.5KE6.8CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 2mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 2mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
на замовлення 479 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 45.96 грн |
| 12+ | 34.89 грн |
| 100+ | 26.02 грн |
| 250+ | 23.60 грн |
| SS34-E3/57T |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 7 inch reel
Mounting: SMD
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Max. forward impulse current: 100A
Manufacturer standard package: 850pcs.
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 3A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 7 inch reel
Mounting: SMD
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Max. forward impulse current: 100A
Manufacturer standard package: 850pcs.
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 3A
на замовлення 1722 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 43.26 грн |
| 15+ | 29.87 грн |
| 100+ | 19.33 грн |
| 200+ | 17.24 грн |
| 500+ | 14.48 грн |
| 850+ | 12.64 грн |
| 1700+ | 10.71 грн |
| SS34-E3/9AT |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel
Mounting: SMD
Kind of package: 13 inch reel
Semiconductor structure: single diode
Leakage current: 20mA
Case: SMC
Type of diode: Schottky rectifying
Max. forward impulse current: 100A
Manufacturer standard package: 3500pcs.
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 3A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel
Mounting: SMD
Kind of package: 13 inch reel
Semiconductor structure: single diode
Leakage current: 20mA
Case: SMC
Type of diode: Schottky rectifying
Max. forward impulse current: 100A
Manufacturer standard package: 3500pcs.
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 3A
товару немає в наявності
В кошику
од. на суму грн.
| MBR20100CT-E3/4W |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Kind of package: tube
Manufacturer standard package: 50pcs.
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Kind of package: tube
Manufacturer standard package: 50pcs.
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
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| 2N7002K-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Pulsed drain current: 0.8A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Pulsed drain current: 0.8A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 1912 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.22 грн |
| 42+ | 10.04 грн |
| 100+ | 5.58 грн |
| 500+ | 3.46 грн |
| 1000+ | 3.29 грн |
| SIHB15N65E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHF15N65E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHP15N65E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SS16-E3/5AT |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 13 inch reel
Leakage current: 5mA
Manufacturer standard package: 7500pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 13 inch reel
Leakage current: 5mA
Manufacturer standard package: 7500pcs.
на замовлення 1936 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.62 грн |
| 59+ | 7.20 грн |
| 100+ | 5.42 грн |
| 500+ | 4.40 грн |
| 1000+ | 4.24 грн |
| 1300+ | 4.17 грн |
| SS16-E3/61T |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Manufacturer standard package: 1800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Manufacturer standard package: 1800pcs.
на замовлення 3602 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 18.92 грн |
| 29+ | 14.73 грн |
| 33+ | 13.05 грн |
| 50+ | 9.10 грн |
| 100+ | 7.86 грн |
| 500+ | 5.90 грн |
| 1000+ | 5.20 грн |
| 1800+ | 4.79 грн |
| 3600+ | 4.41 грн |
| SS16HE3_B/H |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Application: automotive industry
Manufacturer standard package: 1800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Application: automotive industry
Manufacturer standard package: 1800pcs.
на замовлення 4717 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 18.02 грн |
| 38+ | 11.13 грн |
| 40+ | 10.63 грн |
| 50+ | 9.12 грн |
| 100+ | 8.20 грн |
| 500+ | 6.19 грн |
| 1000+ | 5.94 грн |
| 1800+ | 5.44 грн |
| IRF840PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
на замовлення 3572 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 153.20 грн |
| 5+ | 102.92 грн |
| 10+ | 90.37 грн |
| 50+ | 68.62 грн |
| 100+ | 64.43 грн |
| 250+ | 59.41 грн |
| 500+ | 56.06 грн |
| 1000+ | 51.88 грн |
| 2000+ | 49.37 грн |
| BZX55B10-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
на замовлення 18280 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 140+ | 3.29 грн |
| 235+ | 1.82 грн |
| 500+ | 1.61 грн |
| 2500+ | 1.51 грн |
| GRC00JG3321E00L |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3300uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3mF
Operating voltage: 25V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x25mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3300uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3mF
Operating voltage: 25V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x25mm
на замовлення 87 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 67.59 грн |
| 12+ | 36.40 грн |
| 50+ | 29.29 грн |
| IRF530PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 26nC
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 26nC
Kind of channel: enhancement
Kind of package: tube
на замовлення 2905 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 95.52 грн |
| 10+ | 48.70 грн |
| 50+ | 43.68 грн |
| 100+ | 41.42 грн |
| 250+ | 38.41 грн |
| 500+ | 36.23 грн |
| 1000+ | 34.06 грн |
| 2000+ | 31.97 грн |
| IRF530SPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of channel: enhancement
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of channel: enhancement
Kind of package: tube
на замовлення 493 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 143.28 грн |
| 10+ | 87.86 грн |
| 50+ | 70.29 грн |
| 100+ | 65.27 грн |
| 250+ | 60.25 грн |
| BZX55C10-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; DO35; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; DO35; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
на замовлення 4829 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.81 грн |
| 125+ | 3.35 грн |
| 135+ | 3.10 грн |
| 250+ | 2.79 грн |
| 500+ | 2.57 грн |
| 1000+ | 2.39 грн |
| BZX55C12-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 17340 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.32 грн |
| 139+ | 3.01 грн |
| 10000+ | 2.08 грн |
| MUR460-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 4A; 13 inch reel; Ifsm: 150A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: 13 inch reel
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1.05V
Reverse recovery time: 50ns
Quantity in set/package: 1400pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 4A; 13 inch reel; Ifsm: 150A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: 13 inch reel
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1.05V
Reverse recovery time: 50ns
Quantity in set/package: 1400pcs.
на замовлення 932 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.54 грн |
| 16+ | 27.36 грн |
| 100+ | 25.69 грн |
| 500+ | 24.27 грн |
| 1N4007-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; 13 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Kind of package: 13 inch reel
Max. forward voltage: 1.1V
Capacitance: 15pF
Manufacturer standard package: 5500pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; 13 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Kind of package: 13 inch reel
Max. forward voltage: 1.1V
Capacitance: 15pF
Manufacturer standard package: 5500pcs.
товару немає в наявності
В кошику
од. на суму грн.
| 1N4007-E3/73 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ammo Pack
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Kind of package: Ammo Pack
Max. forward voltage: 1.1V
Capacitance: 15pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ammo Pack
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Kind of package: Ammo Pack
Max. forward voltage: 1.1V
Capacitance: 15pF
на замовлення 13250 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 18.02 грн |
| 30+ | 14.06 грн |
| 33+ | 12.97 грн |
| 100+ | 6.79 грн |
| 500+ | 5.71 грн |
| 1000+ | 5.31 грн |
| 3000+ | 4.64 грн |
| 6000+ | 4.20 грн |
| 9000+ | 3.92 грн |
| 293D476X0025D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 76.60 грн |
| 293D476X9025D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
на замовлення 3186 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 107.24 грн |
| 10+ | 58.66 грн |
| 50+ | 40.50 грн |
| 100+ | 35.23 грн |
| 500+ | 29.71 грн |
| 1000+ | 28.79 грн |
| 1500+ | 28.12 грн |
| 2000+ | 27.95 грн |
| 2500+ | 27.36 грн |
| VJ1206Y104KXACW1BC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
на замовлення 96850 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 9.01 грн |
| 117+ | 3.60 грн |
| 268+ | 1.56 грн |
| 500+ | 1.12 грн |
| 1000+ | 1.02 грн |
| 4000+ | 0.91 грн |
| 8000+ | 0.89 грн |
| 12000+ | 0.88 грн |
| 20000+ | 0.86 грн |
| 1N4148-TAP |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ifsm: 2A; DO35; Ammo Pack; 8ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Max. forward impulse current: 2A
Case: DO35
Kind of package: Ammo Pack
Reverse recovery time: 8ns
Max. load current: 0.5A
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ifsm: 2A; DO35; Ammo Pack; 8ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Max. forward impulse current: 2A
Case: DO35
Kind of package: Ammo Pack
Reverse recovery time: 8ns
Max. load current: 0.5A
на замовлення 16264 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.81 грн |
| 64+ | 6.61 грн |
| 135+ | 3.10 грн |
| 500+ | 2.00 грн |
| 1000+ | 1.80 грн |
| 2000+ | 1.64 грн |
| 5000+ | 1.46 грн |
| 10000+ | 1.36 грн |
| SIHA20N50E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
од. на суму грн.
| SIHB20N50E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHG20N50E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 135 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 267.77 грн |
| 5+ | 230.11 грн |
| 10+ | 206.69 грн |
| 25+ | 181.58 грн |
| 100+ | 153.13 грн |
| SiHH20N50E-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 53A
Power dissipation: 174W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 53A
Power dissipation: 174W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHP20N50E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHJ7N65E-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 17A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±30V
On-state resistance: 598mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 17A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±30V
On-state resistance: 598mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| CRCW12060000Z0TABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0Ω; SMD; 1206; 0.25W; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 0Ω
Power: 0.25W
Operating temperature: -55...155°C
Operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Tolerance: ±5%
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; 0Ω; SMD; 1206; 0.25W; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 0Ω
Power: 0.25W
Operating temperature: -55...155°C
Operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Tolerance: ±5%
Mounting: SMD
на замовлення 97840 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 756+ | 0.60 грн |
| 848+ | 0.49 грн |
| 1023+ | 0.41 грн |
| 1163+ | 0.36 грн |
| 5000+ | 0.26 грн |
| 10000+ | 0.25 грн |
| 25000+ | 0.24 грн |
| 50000+ | 0.23 грн |
| 75000+ | 0.22 грн |
| BAV70-E3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Manufacturer standard package: 3000pcs.
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Manufacturer standard package: 3000pcs.
Features of semiconductor devices: small signal
на замовлення 20305 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.62 грн |
| 53+ | 8.03 грн |
| 100+ | 5.02 грн |
| 500+ | 3.61 грн |
| 1000+ | 3.13 грн |
| 3000+ | 2.49 грн |
| 6000+ | 2.17 грн |
| 9000+ | 2.00 грн |
| 15000+ | 1.81 грн |
| BAV70-G3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
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В кошику
од. на суму грн.
| LL4148-GS08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 7 inch reel
Manufacturer standard package: 2500pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 7 inch reel
Manufacturer standard package: 2500pcs.
на замовлення 1037493 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 84+ | 5.41 грн |
| 152+ | 2.76 грн |
| 274+ | 1.53 грн |
| 511+ | 0.82 грн |
| 1000+ | 0.64 грн |
| 2500+ | 0.54 грн |
| 5000+ | 0.53 грн |
| 12500+ | 0.51 грн |
| 25000+ | 0.50 грн |
| LL4148-GS18 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 13 inch reel
Manufacturer standard package: 10000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 13 inch reel
Manufacturer standard package: 10000pcs.
на замовлення 9959 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 84+ | 5.41 грн |
| 167+ | 2.51 грн |
| 302+ | 1.39 грн |
| 500+ | 0.92 грн |
| 1000+ | 0.79 грн |
| 2000+ | 0.68 грн |
| 5000+ | 0.60 грн |
| GRC00JS4721E00L |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4700uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7mF
Operating voltage: 25V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x31.5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4700uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7mF
Operating voltage: 25V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x31.5mm
на замовлення 355 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 66.23 грн |
| 12+ | 36.40 грн |
| 50+ | 28.20 грн |
| 100+ | 22.59 грн |
| 293D106X0050E2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 10µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case: E
Case - inch: 2917
Case - mm: 7343
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 10µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case: E
Case - inch: 2917
Case - mm: 7343
на замовлення 142 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 111.74 грн |
| 10+ | 82.84 грн |
| 50+ | 73.64 грн |
| 100+ | 65.27 грн |
| 293D106X9050D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 10µF
Operating voltage: 50V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 10µF
Operating voltage: 50V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
на замовлення 8066 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 75.70 грн |
| 10+ | 41.92 грн |
| 25+ | 35.48 грн |
| 50+ | 34.06 грн |
| 100+ | 32.63 грн |
| 250+ | 31.80 грн |
| 293D106X9050E2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 10µF
Operating voltage: 50V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case: E
Case - inch: 2917
Case - mm: 7343
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 10µF
Operating voltage: 50V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case: E
Case - inch: 2917
Case - mm: 7343
на замовлення 17 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 103.63 грн |
| 10+ | 68.53 грн |
| 293D475X0050D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 50V DC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case: D
Case - inch: 2917
Case - mm: 7343
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 50V DC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case: D
Case - inch: 2917
Case - mm: 7343
на замовлення 327 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 76.60 грн |
| 293D475X9050D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 50V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Roll diameter max.: 178mm
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 50V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Roll diameter max.: 178mm
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
на замовлення 976 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 75.70 грн |
| 10+ | 50.12 грн |
| 50+ | 38.91 грн |
| 100+ | 34.73 грн |
| 500+ | 26.27 грн |
| 293D475X9025B2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: B
Case - inch: 1411
Case - mm: 3528
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: B
Case - inch: 1411
Case - mm: 3528
Manufacturer series: Tantamount
на замовлення 570 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 28.84 грн |
| 23+ | 18.74 грн |
| 50+ | 12.22 грн |
| 100+ | 10.21 грн |
| 250+ | 8.28 грн |
| 500+ | 7.20 грн |
| 293D475X9025C2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Roll diameter max.: 178mm
Case: C
Case - inch: 2312
Case - mm: 6032
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Roll diameter max.: 178mm
Case: C
Case - inch: 2312
Case - mm: 6032
Manufacturer series: Tantamount
на замовлення 4348 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.23 грн |
| 22+ | 19.41 грн |
| 25+ | 17.41 грн |
| 50+ | 14.48 грн |
| 100+ | 12.55 грн |
| 200+ | 10.79 грн |
| 500+ | 9.29 грн |
| SIHA240N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHD240N60E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| 293D476X0016D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 16V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 16V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
на замовлення 55 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 47.76 грн |
| 293D476X9010B2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: B
Case - inch: 1411
Case - mm: 3528
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: B
Case - inch: 1411
Case - mm: 3528
Manufacturer series: Tantamount
на замовлення 9567 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 18.02 грн |
| 33+ | 13.05 грн |
| 36+ | 11.71 грн |
| 50+ | 9.46 грн |
| 100+ | 8.79 грн |
| 250+ | 8.20 грн |
| 293D476X9010C2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: C
Case - inch: 2312
Case - mm: 6032
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: C
Case - inch: 2312
Case - mm: 6032
Manufacturer series: Tantamount
на замовлення 1510 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 42.35 грн |
| 14+ | 30.71 грн |
| 50+ | 19.25 грн |
| 100+ | 15.40 грн |
| 200+ | 12.72 грн |
| 250+ | 12.55 грн |
| 293D476X9016C2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 16V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2312
Case - mm: 6032
Case: C
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 16V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2312
Case - mm: 6032
Case: C
на замовлення 4136 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.85 грн |
| 23+ | 18.41 грн |
| 50+ | 12.47 грн |
| 100+ | 11.30 грн |
| 500+ | 10.29 грн |
| 1000+ | 10.21 грн |
| 1500+ | 10.04 грн |
| 2500+ | 9.87 грн |
| 293D476X9016D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 16V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 16V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
на замовлення 8613 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.34 грн |
| 19+ | 22.68 грн |
| 50+ | 18.16 грн |
| 100+ | 16.57 грн |
| 500+ | 13.64 грн |
| 1000+ | 12.72 грн |
| 1500+ | 12.22 грн |
| 2500+ | 11.97 грн |






























