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SIHFR110-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Case: DPAK; TO252
Mounting: SMD
Power dissipation: 25W
Pulsed drain current: 17A
Gate charge: 8.3nC
Polarisation: unipolar
Drain current: 2.7A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 0.54Ω
кількість в упаковці: 1 шт
товар відсутній
SIHFR110TR-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Case: DPAK; TO252
Mounting: SMD
Power dissipation: 25W
Pulsed drain current: 17A
Gate charge: 8.3nC
Polarisation: unipolar
Drain current: 2.7A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 0.54Ω
кількість в упаковці: 1 шт
товар відсутній
SIHFR110TRL-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Case: DPAK; TO252
Mounting: SMD
Power dissipation: 25W
Pulsed drain current: 17A
Gate charge: 8.3nC
Polarisation: unipolar
Drain current: 2.7A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 0.54Ω
кількість в упаковці: 1 шт
товар відсутній
SIHFR120-GE3 VISHAY sihfr120.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 42W
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Pulsed drain current: 31A
Gate charge: 16nC
Polarisation: unipolar
Drain current: 4.9A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
SIHFR120TR-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 42W
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Pulsed drain current: 31A
Gate charge: 16nC
Polarisation: unipolar
Drain current: 4.9A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
SIHFR120TRL-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 42W
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Pulsed drain current: 31A
Gate charge: 16nC
Polarisation: unipolar
Drain current: 4.9A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
SIHFR1N60A-GE3 SIHFR1N60A-GE3 VISHAY IRFR1N60A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.98A; 36W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.98A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 89 шт:
термін постачання 7-14 дні (днів)
4+74.59 грн
5+ 65.07 грн
20+ 55.24 грн
22+ 45.35 грн
58+ 42.87 грн
Мінімальне замовлення: 4
SIHFR1N60ATRL-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 890mA; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Pulsed drain current: 5.6A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFR210TRL-GE3 VISHAY SIHFR210TRL-GE3 SMD N channel transistors
товар відсутній
SIHFR220-GE3 SIHFR220-GE3 VISHAY IRFR220.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; Idm: 19A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3A
Pulsed drain current: 19A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIHFR220TRL-GE3 VISHAY SIHFR220TRL-GE3 SMD N channel transistors
товар відсутній
SIHFR310-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.1A
Pulsed drain current: 6A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFR310TR-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.1A
Pulsed drain current: 6A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFR320-GE3 VISHAY sihfr320.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2A; Idm: 12A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2A
Pulsed drain current: 12A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFR320TR-GE3 VISHAY sihfr320.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2A; Idm: 12A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2A
Pulsed drain current: 12A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFR420-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
SIHFR420A-GE3 VISHAY sihfr420.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 10A; 83W
Mounting: SMD
Case: DPAK; TO252
Power dissipation: 83W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 10A
On-state resistance:
Type of transistor: N-MOSFET
Drain current: 2.1A
Drain-source voltage: 500V
кількість в упаковці: 1 шт
товар відсутній
SIHFR420ATR-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 10A; 83W
Mounting: SMD
Case: DPAK; TO252
Power dissipation: 83W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 10A
On-state resistance:
Type of transistor: N-MOSFET
Drain current: 2.1A
Drain-source voltage: 500V
кількість в упаковці: 1 шт
товар відсутній
SIHFR420TR-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
SIHFR420TRL-GE3 VISHAY sihfr420.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
SIHFR430A-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.2A; Idm: 20A; 110W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.2A
Pulsed drain current: 20A
Power dissipation: 110W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFR430ATR-GE3 VISHAY sihfr430.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.2A; Idm: 20A; 110W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.2A
Pulsed drain current: 20A
Power dissipation: 110W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFR9014-GE3 VISHAY sihfr901.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W
Pulsed drain current: -20A
Power dissipation: 25W
Gate charge: 12nC
Polarisation: unipolar
Drain current: -3.2A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 0.5Ω
Gate-source voltage: ±20V
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
SIHFR9014TR-GE3 VISHAY Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W
Pulsed drain current: -20A
Power dissipation: 25W
Gate charge: 12nC
Polarisation: unipolar
Drain current: -3.2A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 0.5Ω
Gate-source voltage: ±20V
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
SIHFR9014TRL-GE3 VISHAY Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W
Pulsed drain current: -20A
Power dissipation: 25W
Gate charge: 12nC
Polarisation: unipolar
Drain current: -3.2A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 0.5Ω
Gate-source voltage: ±20V
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
SIHFR9020TR-GE3 VISHAY SIHFR9020TR-GE3 SMD P channel transistors
товар відсутній
SIHFR9024-GE3 VISHAY Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFR9024TR-GE3 VISHAY sihfr902.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFR9110TR-GE3 VISHAY SIHFR9110TR-GE3 SMD P channel transistors
товар відсутній
SIHFR9110TRL-GE3 VISHAY SIHFR9110TRL-GE3 SMD P channel transistors
товар відсутній
SIHFR9120-GE3 VISHAY sihfr912.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.6A; Idm: -22A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.6A
Pulsed drain current: -22A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFR9120TR-GE3 VISHAY Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.6A; Idm: -22A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.6A
Pulsed drain current: -22A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFR9210TR-GE3 VISHAY SIHFR9210TR-GE3 SMD P channel transistors
товар відсутній
SIHFR9214-GE3 VISHAY SIHFR9214-GE3 SMD P channel transistors
товар відсутній
SIHFR9214TR-GE3 VISHAY SIHFR9214TR-GE3 SMD P channel transistors
товар відсутній
SIHFR9220-GE3 VISHAY sihfr922.pdf SIHFR9220-GE3 SMD P channel transistors
товар відсутній
SIHFR9220TR-GE3 VISHAY SIHFR9220TR-GE3 SMD P channel transistors
товар відсутній
SIHFR9220TRL-GE3 VISHAY SIHFR9220TRL-GE3 SMD P channel transistors
товар відсутній
SIHFR9220TRR-GE3 VISHAY SIHFR9220TRR-GE3 SMD P channel transistors
товар відсутній
SIHFR9310-GE3 VISHAY sihfr931.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFR9310TR-GE3 VISHAY sihfr931.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFR9310TRL-GE3 VISHAY sihfr931.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFRC20-GE3 VISHAY SIHFRC20-GE3 SMD N channel transistors
товар відсутній
SIHFRC20TR-GE3 VISHAY sihfrc20.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
SIHFS9N60A-GE3 VISHAY sihs9n60.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; Idm: 37A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.8A
Pulsed drain current: 37A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFU020-GE3 VISHAY SIHFU020-GE3 THT N channel transistors
товар відсутній
SIHFU024-GE3 VISHAY SIHFU024-GE3 THT N channel transistors
товар відсутній
SIHFU310-GE3 VISHAY sihfr310.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.1A
Pulsed drain current: 6A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFU9020-GE3 VISHAY SIHFU9020-GE3 THT P channel transistors
товар відсутній
SIHFU9310-GE3 VISHAY Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance:
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFUC20-GE3 VISHAY SIHFUC20-GE3 THT N channel transistors
товар відсутній
SIHFZ34S-GE3 VISHAY SIHFZ34S-GE3 SMD N channel transistors
товар відсутній
SIHFZ48RS-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Mounting: SMD
Case: D2PAK; TO263
Kind of package: reel; tape
Power dissipation: 190W
Drain-source voltage: 60V
Drain current: 50A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 110nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 290A
кількість в упаковці: 1 шт
товар відсутній
SIHFZ48S-GE3 VISHAY sihfz48s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Mounting: SMD
Case: D2PAK; TO263
Kind of package: reel; tape
Power dissipation: 190W
Drain-source voltage: 60V
Drain current: 50A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 110nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 290A
кількість в упаковці: 1 шт
товар відсутній
SIHG018N60E-GE3 VISHAY sihg018n60e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 63A; Idm: 325A; 524W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 63A
Pulsed drain current: 325A
Power dissipation: 524W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHG039N60E-GE3 VISHAY sihg039n60e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; Idm: 199A; 357W; TO247AC
Case: TO247AC
Mounting: THT
Kind of package: tube
Power dissipation: 357W
Polarisation: unipolar
Gate charge: 126nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 199A
Drain-source voltage: 600V
Drain current: 40A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
SIHG050N60E-GE3 VISHAY sihg050n60e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; Idm: 155A; 278W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Pulsed drain current: 155A
Power dissipation: 278W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHG052N60EF-GE3 VISHAY sihg052n60ef.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 148A; 278W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 148A
Power dissipation: 278W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 101nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHG065N60E-GE3 VISHAY sihg065n60e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 116A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 116A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHG068N60EF-GE3 VISHAY sihg068n60ef.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 115A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 115A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
SIHFR110-GE3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Case: DPAK; TO252
Mounting: SMD
Power dissipation: 25W
Pulsed drain current: 17A
Gate charge: 8.3nC
Polarisation: unipolar
Drain current: 2.7A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 0.54Ω
кількість в упаковці: 1 шт
товар відсутній
SIHFR110TR-GE3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Case: DPAK; TO252
Mounting: SMD
Power dissipation: 25W
Pulsed drain current: 17A
Gate charge: 8.3nC
Polarisation: unipolar
Drain current: 2.7A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 0.54Ω
кількість в упаковці: 1 шт
товар відсутній
SIHFR110TRL-GE3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Case: DPAK; TO252
Mounting: SMD
Power dissipation: 25W
Pulsed drain current: 17A
Gate charge: 8.3nC
Polarisation: unipolar
Drain current: 2.7A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 0.54Ω
кількість в упаковці: 1 шт
товар відсутній
SIHFR120-GE3 sihfr120.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 42W
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Pulsed drain current: 31A
Gate charge: 16nC
Polarisation: unipolar
Drain current: 4.9A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
SIHFR120TR-GE3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 42W
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Pulsed drain current: 31A
Gate charge: 16nC
Polarisation: unipolar
Drain current: 4.9A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
SIHFR120TRL-GE3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 42W
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Pulsed drain current: 31A
Gate charge: 16nC
Polarisation: unipolar
Drain current: 4.9A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
SIHFR1N60A-GE3 IRFR1N60A.pdf
SIHFR1N60A-GE3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.98A; 36W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.98A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 89 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
4+74.59 грн
5+ 65.07 грн
20+ 55.24 грн
22+ 45.35 грн
58+ 42.87 грн
Мінімальне замовлення: 4
SIHFR1N60ATRL-GE3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 890mA; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Pulsed drain current: 5.6A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFR210TRL-GE3
Виробник: VISHAY
SIHFR210TRL-GE3 SMD N channel transistors
товар відсутній
SIHFR220-GE3 IRFR220.pdf
SIHFR220-GE3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; Idm: 19A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3A
Pulsed drain current: 19A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIHFR220TRL-GE3
Виробник: VISHAY
SIHFR220TRL-GE3 SMD N channel transistors
товар відсутній
SIHFR310-GE3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.1A
Pulsed drain current: 6A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFR310TR-GE3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.1A
Pulsed drain current: 6A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFR320-GE3 sihfr320.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2A; Idm: 12A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2A
Pulsed drain current: 12A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFR320TR-GE3 sihfr320.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2A; Idm: 12A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2A
Pulsed drain current: 12A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFR420-GE3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
SIHFR420A-GE3 sihfr420.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 10A; 83W
Mounting: SMD
Case: DPAK; TO252
Power dissipation: 83W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 10A
On-state resistance:
Type of transistor: N-MOSFET
Drain current: 2.1A
Drain-source voltage: 500V
кількість в упаковці: 1 шт
товар відсутній
SIHFR420ATR-GE3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 10A; 83W
Mounting: SMD
Case: DPAK; TO252
Power dissipation: 83W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 10A
On-state resistance:
Type of transistor: N-MOSFET
Drain current: 2.1A
Drain-source voltage: 500V
кількість в упаковці: 1 шт
товар відсутній
SIHFR420TR-GE3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
SIHFR420TRL-GE3 sihfr420.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
SIHFR430A-GE3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.2A; Idm: 20A; 110W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.2A
Pulsed drain current: 20A
Power dissipation: 110W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFR430ATR-GE3 sihfr430.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.2A; Idm: 20A; 110W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.2A
Pulsed drain current: 20A
Power dissipation: 110W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFR9014-GE3 sihfr901.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W
Pulsed drain current: -20A
Power dissipation: 25W
Gate charge: 12nC
Polarisation: unipolar
Drain current: -3.2A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 0.5Ω
Gate-source voltage: ±20V
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
SIHFR9014TR-GE3
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W
Pulsed drain current: -20A
Power dissipation: 25W
Gate charge: 12nC
Polarisation: unipolar
Drain current: -3.2A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 0.5Ω
Gate-source voltage: ±20V
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
SIHFR9014TRL-GE3
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W
Pulsed drain current: -20A
Power dissipation: 25W
Gate charge: 12nC
Polarisation: unipolar
Drain current: -3.2A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 0.5Ω
Gate-source voltage: ±20V
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
SIHFR9020TR-GE3
Виробник: VISHAY
SIHFR9020TR-GE3 SMD P channel transistors
товар відсутній
SIHFR9024-GE3
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFR9024TR-GE3 sihfr902.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFR9110TR-GE3
Виробник: VISHAY
SIHFR9110TR-GE3 SMD P channel transistors
товар відсутній
SIHFR9110TRL-GE3
Виробник: VISHAY
SIHFR9110TRL-GE3 SMD P channel transistors
товар відсутній
SIHFR9120-GE3 sihfr912.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.6A; Idm: -22A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.6A
Pulsed drain current: -22A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFR9120TR-GE3
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.6A; Idm: -22A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.6A
Pulsed drain current: -22A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFR9210TR-GE3
Виробник: VISHAY
SIHFR9210TR-GE3 SMD P channel transistors
товар відсутній
SIHFR9214-GE3
Виробник: VISHAY
SIHFR9214-GE3 SMD P channel transistors
товар відсутній
SIHFR9214TR-GE3
Виробник: VISHAY
SIHFR9214TR-GE3 SMD P channel transistors
товар відсутній
SIHFR9220-GE3 sihfr922.pdf
Виробник: VISHAY
SIHFR9220-GE3 SMD P channel transistors
товар відсутній
SIHFR9220TR-GE3
Виробник: VISHAY
SIHFR9220TR-GE3 SMD P channel transistors
товар відсутній
SIHFR9220TRL-GE3
Виробник: VISHAY
SIHFR9220TRL-GE3 SMD P channel transistors
товар відсутній
SIHFR9220TRR-GE3
Виробник: VISHAY
SIHFR9220TRR-GE3 SMD P channel transistors
товар відсутній
SIHFR9310-GE3 sihfr931.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFR9310TR-GE3 sihfr931.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFR9310TRL-GE3 sihfr931.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFRC20-GE3
Виробник: VISHAY
SIHFRC20-GE3 SMD N channel transistors
товар відсутній
SIHFRC20TR-GE3 sihfrc20.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
SIHFS9N60A-GE3 sihs9n60.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; Idm: 37A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.8A
Pulsed drain current: 37A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFU020-GE3
Виробник: VISHAY
SIHFU020-GE3 THT N channel transistors
товар відсутній
SIHFU024-GE3
Виробник: VISHAY
SIHFU024-GE3 THT N channel transistors
товар відсутній
SIHFU310-GE3 sihfr310.pdf
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.1A; Idm: 6A; 25W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.1A
Pulsed drain current: 6A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFU9020-GE3
Виробник: VISHAY
SIHFU9020-GE3 THT P channel transistors
товар відсутній
SIHFU9310-GE3
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance:
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHFUC20-GE3
Виробник: VISHAY
SIHFUC20-GE3 THT N channel transistors
товар відсутній
SIHFZ34S-GE3
Виробник: VISHAY
SIHFZ34S-GE3 SMD N channel transistors
товар відсутній
SIHFZ48RS-GE3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Mounting: SMD
Case: D2PAK; TO263
Kind of package: reel; tape
Power dissipation: 190W
Drain-source voltage: 60V
Drain current: 50A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 110nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 290A
кількість в упаковці: 1 шт
товар відсутній
SIHFZ48S-GE3 sihfz48s.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Mounting: SMD
Case: D2PAK; TO263
Kind of package: reel; tape
Power dissipation: 190W
Drain-source voltage: 60V
Drain current: 50A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 110nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 290A
кількість в упаковці: 1 шт
товар відсутній
SIHG018N60E-GE3 sihg018n60e.pdf
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 63A; Idm: 325A; 524W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 63A
Pulsed drain current: 325A
Power dissipation: 524W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHG039N60E-GE3 sihg039n60e.pdf
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; Idm: 199A; 357W; TO247AC
Case: TO247AC
Mounting: THT
Kind of package: tube
Power dissipation: 357W
Polarisation: unipolar
Gate charge: 126nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 199A
Drain-source voltage: 600V
Drain current: 40A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
SIHG050N60E-GE3 sihg050n60e.pdf
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; Idm: 155A; 278W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Pulsed drain current: 155A
Power dissipation: 278W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHG052N60EF-GE3 sihg052n60ef.pdf
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 148A; 278W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 148A
Power dissipation: 278W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 101nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHG065N60E-GE3 sihg065n60e.pdf
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 116A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 116A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHG068N60EF-GE3 sihg068n60ef.pdf
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 115A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 115A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
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