| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IRL640PBF | VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±10V On-state resistance: 0.27Ω Mounting: THT Gate charge: 66nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 299 шт: термін постачання 7-14 дні (днів) |
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IRL640SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 11A; 125W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 66nC Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 124 шт: термін постачання 7-14 дні (днів) |
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IRL640STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 68A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 68A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 796 шт: термін постачання 7-14 дні (днів) |
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| IRL640STRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 17A; Idm: 68A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 17A Pulsed drain current: 68A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 800 шт |
товар відсутній |
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| IRLD014PBF | VISHAY |
IRLD014PBF THT N channel transistors |
на замовлення 110 шт: термін постачання 7-14 дні (днів) |
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IRLD024PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.3W; DIP4 Case: DIP4 Mounting: THT On-state resistance: 0.14Ω Power dissipation: 1.3W Polarisation: unipolar Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±10V Drain-source voltage: 60V Drain current: 1.8A Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
на замовлення 1431 шт: термін постачання 7-14 дні (днів) |
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IRLD110PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.7A; 1.3W; DIP4 Case: DIP4 Mounting: THT Power dissipation: 1.3W Polarisation: unipolar Gate charge: 6.1nC Kind of channel: enhanced Gate-source voltage: ±10V Drain-source voltage: 100V Drain current: 0.7A On-state resistance: 760mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
на замовлення 704 шт: термін постачання 7-14 дні (днів) |
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IRLD120PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.94A; 1.3W; DIP4 Case: DIP4 Mounting: THT Power dissipation: 1.3W Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±10V Drain-source voltage: 100V Drain current: 0.94A On-state resistance: 0.38Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
на замовлення 573 шт: термін постачання 7-14 дні (днів) |
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| IRLI520GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.2A; Idm: 29A; 37W; TO220FP Kind of package: tube Power dissipation: 37W Polarisation: unipolar Drain-source voltage: 100V Case: TO220FP Mounting: THT Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 29A On-state resistance: 0.38Ω Type of transistor: N-MOSFET Drain current: 7.2A кількість в упаковці: 1 шт |
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| IRLI530GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.7A; Idm: 39A; 42W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.7A Pulsed drain current: 39A Power dissipation: 42W Case: TO220FP Gate-source voltage: ±10V On-state resistance: 0.22Ω Mounting: THT Gate charge: 28nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| IRLI630GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 6.2A; Idm: 25A; 35W; TO220FP Kind of package: tube Power dissipation: 35W Polarisation: unipolar Drain-source voltage: 200V Case: TO220FP Mounting: THT Gate charge: 40nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 25A On-state resistance: 0.5Ω Type of transistor: N-MOSFET Drain current: 6.2A кількість в упаковці: 1 шт |
товар відсутній |
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IRLI640GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 9.9A; Idm: 40A; 40W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Power dissipation: 40W Polarisation: unipolar Gate charge: 66nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 40A Drain-source voltage: 200V Drain current: 9.9A On-state resistance: 0.18Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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| IRLIZ14GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 27W; TO220FP Kind of package: tube Power dissipation: 27W Polarisation: unipolar Drain-source voltage: 60V Case: TO220FP Mounting: THT Gate charge: 8.4nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 32A On-state resistance: 0.28Ω Type of transistor: N-MOSFET Drain current: 8A кількість в упаковці: 1 шт |
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| IRLIZ34GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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| IRLIZ44GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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IRLL014TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.7A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±10V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2708 шт: термін постачання 7-14 дні (днів) |
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| IRLL014TRPBF-BE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2.7A; Idm: 22A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.7A Pulsed drain current: 22A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±10V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
товар відсутній |
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IRLL110TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223 Mounting: SMD Case: SOT223 Polarisation: unipolar On-state resistance: 760mΩ Type of transistor: N-MOSFET Power dissipation: 3.1W Kind of package: reel; tape Gate charge: 6.1nC Kind of channel: enhanced Gate-source voltage: ±10V Drain-source voltage: 100V Drain current: 0.93A кількість в упаковці: 1 шт |
на замовлення 3230 шт: термін постачання 7-14 дні (днів) |
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IRLR014PBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.7A Pulsed drain current: 31A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2977 шт: термін постачання 7-14 дні (днів) |
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| IRLR014TRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.7A Pulsed drain current: 31A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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IRLR014TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.7A Pulsed drain current: 31A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2000 шт |
товар відсутній |
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| IRLR024PBF | VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 56A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| IRLR024TRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 56A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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| IRLR024TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 56A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2000 шт |
товар відсутній |
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IRLR110PBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.7A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.54Ω Mounting: SMD Gate charge: 6.1nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1581 шт: термін постачання 7-14 дні (днів) |
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| IRLR110TRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.3A Pulsed drain current: 17A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 760mΩ Mounting: SMD Gate charge: 6.1nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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IRLR110TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.7A Pulsed drain current: 17A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.54Ω Mounting: SMD Gate charge: 6.1nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 2000 шт |
товар відсутній |
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| IRLR120PBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.7A; Idm: 31A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 7.7A Pulsed drain current: 31A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| IRLR120TRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.7A; Idm: 31A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 7.7A Pulsed drain current: 31A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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IRLR120TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.9A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1932 шт: термін постачання 7-14 дні (днів) |
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| IRLR120TRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.7A; Idm: 31A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 7.7A Pulsed drain current: 31A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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IRLU014PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; 25W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.9A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±10V On-state resistance: 0.28Ω Mounting: THT Gate charge: 8.4nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRLU024PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9.2A; 42W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9.2A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±10V On-state resistance: 0.1Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 582 шт: термін постачання 7-14 дні (днів) |
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IRLU110PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.3A Pulsed drain current: 17A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±10V On-state resistance: 0.54Ω Mounting: THT Gate charge: 6.1nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 964 шт: термін постачання 7-14 дні (днів) |
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IRLZ14PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.2A; 43W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.2A Power dissipation: 43W Case: TO220AB Gate-source voltage: ±10V On-state resistance: 0.28Ω Mounting: THT Gate charge: 8.4nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2455 шт: термін постачання 7-14 дні (днів) |
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| IRLZ14SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 40A; 43W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Pulsed drain current: 40A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| IRLZ14STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 40A; 43W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Pulsed drain current: 40A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRLZ24PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 60W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Power dissipation: 60W Case: TO220AB Gate-source voltage: ±10V On-state resistance: 0.1Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 758 шт: термін постачання 7-14 дні (днів) |
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| IRLZ34PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 110A; 88W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 30A Pulsed drain current: 110A Power dissipation: 88W Case: TO220AB Gate-source voltage: ±10V On-state resistance: 70mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRLZ44PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±10V On-state resistance: 28mΩ Mounting: THT Gate charge: 66nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1007 шт: термін постачання 7-14 дні (днів) |
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| IRLZ44SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 200A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 39mΩ Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| IRLZ44STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 200A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 39mΩ Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 800 шт |
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| IRLZ44STRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 200A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 39mΩ Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 800 шт |
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| K101J15C0GL5UH5 | VISHAY |
Category: MLCC THT capacitors Description: Capacitor: ceramic; 100pF; 500V; C0G (NP0); ±5%; THT; 5mm Mounting: THT Operating temperature: -55...125°C Terminal pitch: 5mm Tolerance: ±5% Type of capacitor: ceramic Dielectric: C0G (NP0) Capacitance: 0.1nF Operating voltage: 500V кількість в упаковці: 2500 шт |
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| K101K10C0GF5UL2 | VISHAY |
Category: MLCC THT capacitors Description: Capacitor: ceramic; 100pF; 50V; C0G (NP0); ±10%; THT; 2.5mm Mounting: THT Operating temperature: -55...125°C Terminal pitch: 2.5mm Tolerance: ±10% Type of capacitor: ceramic Dielectric: C0G (NP0) Capacitance: 0.1nF Operating voltage: 50V кількість в упаковці: 2500 шт |
товар відсутній |
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| K102K15X7RH53L2 | VISHAY |
Category: MLCC THT capacitors Description: Capacitor: ceramic; 1nF; 100V; X7R; ±10%; THT; 2.5mm Mounting: THT Tolerance: ±10% Operating temperature: -55...125°C Terminal pitch: 2.5mm Operating voltage: 100V Dielectric: X7R Type of capacitor: ceramic Capacitance: 1nF кількість в упаковці: 5000 шт |
товар відсутній |
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| K102K15X7RH5TH5 | VISHAY |
Category: MLCC THT capacitors Description: Capacitor: ceramic; 1nF; 100V; X7R; ±10%; THT; 5mm Mounting: THT Tolerance: ±10% Operating temperature: -55...125°C Terminal pitch: 5mm Operating voltage: 100V Dielectric: X7R Type of capacitor: ceramic Capacitance: 1nF кількість в упаковці: 4000 шт |
товар відсутній |
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| K103K10X7RF5UH5 | VISHAY |
Category: MLCC THT capacitors Description: Capacitor: ceramic; 10nF; 50V; X7R; ±10%; THT; 5mm Mounting: THT Operating temperature: -55...125°C Operating voltage: 50V Terminal pitch: 5mm Capacitance: 10nF Dielectric: X7R Type of capacitor: ceramic Tolerance: ±10% кількість в упаковці: 2500 шт |
товар відсутній |
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| K103K10X7RH5UL2 | VISHAY |
Category: MLCC THT capacitors Description: Capacitor: ceramic; 10nF; 100V; X7R; ±10%; THT; 2.5mm Type of capacitor: ceramic Capacitance: 10nF Operating voltage: 100V Dielectric: X7R Tolerance: ±10% Mounting: THT Terminal pitch: 2.5mm Operating temperature: -55...125°C кількість в упаковці: 2500 шт |
товар відсутній |
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| K103K15X7RF53L2 | VISHAY |
Category: MLCC THT capacitors Description: Capacitor: ceramic; 10nF; 50V; X7R; ±10%; THT; 2.5mm Mounting: THT Operating temperature: -55...125°C Operating voltage: 50V Terminal pitch: 2.5mm Capacitance: 10nF Dielectric: X7R Type of capacitor: ceramic Tolerance: ±10% кількість в упаковці: 1000 шт |
товар відсутній |
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| K103K15X7RF5UH5 | VISHAY |
Category: MLCC THT capacitors Description: Capacitor: ceramic; 10nF; 50V; X7R; ±10%; THT; 5mm Mounting: THT Operating temperature: -55...125°C Operating voltage: 50V Terminal pitch: 5mm Capacitance: 10nF Dielectric: X7R Type of capacitor: ceramic Tolerance: ±10% кількість в упаковці: 2500 шт |
товар відсутній |
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 |
K104K10X7RF5UH5 | VISHAY |
Category: THT ceramic capacitors Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; THT; 5mm Mounting: THT Operating temperature: -55...125°C Terminal pitch: 5mm Tolerance: ±10% Type of capacitor: ceramic Dielectric: X7R Capacitance: 0.1µF Operating voltage: 50V кількість в упаковці: 10 шт |
на замовлення 1510 шт: термін постачання 7-14 дні (днів) |
|
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 |
K104K10X7RF5UL2 | VISHAY |
Category: THT ceramic capacitors Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; THT; 2.5mm Mounting: THT Operating temperature: -55...125°C Terminal pitch: 2.5mm Tolerance: ±10% Type of capacitor: ceramic Dielectric: X7R Capacitance: 0.1µF Operating voltage: 50V кількість в упаковці: 10 шт |
на замовлення 20 шт: термін постачання 7-14 дні (днів) |
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| K104K15X7RF5TH5 | VISHAY |
Category: MLCC THT capacitors Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; THT; 5mm Mounting: THT Operating temperature: -55...125°C Terminal pitch: 5mm Tolerance: ±10% Type of capacitor: ceramic Dielectric: X7R Capacitance: 0.1µF Operating voltage: 50V кількість в упаковці: 4000 шт |
товар відсутній |
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| K104K15X7RF5TL2 | VISHAY |
Category: MLCC THT capacitors Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; THT; 2.5mm Mounting: THT Operating temperature: -55...125°C Terminal pitch: 2.5mm Tolerance: ±10% Type of capacitor: ceramic Dielectric: X7R Capacitance: 0.1µF Operating voltage: 50V кількість в упаковці: 4000 шт |
товар відсутній |
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 |
K104K20X7RH5TH5 | VISHAY |
Category: MLCC THT capacitors Description: Capacitor: ceramic; 100nF; 100V; X7R; ±10%; THT; 5mm Mounting: THT Operating temperature: -55...125°C Terminal pitch: 5mm Tolerance: ±10% Type of capacitor: ceramic Dielectric: X7R Capacitance: 0.1µF Operating voltage: 100V кількість в упаковці: 10 шт |
на замовлення 950 шт: термін постачання 7-14 дні (днів) |
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| K104M15X7RF5TH5 | VISHAY |
Category: MLCC THT capacitors Description: Capacitor: ceramic; 100nF; 50V; X7R; ±20%; THT; 5mm Mounting: THT Operating temperature: -55...125°C Terminal pitch: 5mm Tolerance: ±20% Type of capacitor: ceramic Dielectric: X7R Capacitance: 0.1µF Operating voltage: 50V кількість в упаковці: 4000 шт |
товар відсутній |
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| K154K20X7RF5TL2 | VISHAY |
Category: MLCC THT capacitors Description: Capacitor: ceramic; 150nF; 50V; X7R; ±10%; THT; 2.5mm Mounting: THT Operating temperature: -55...125°C Dielectric: X7R Type of capacitor: ceramic Tolerance: ±10% Terminal pitch: 2.5mm Capacitance: 0.15µF Operating voltage: 50V кількість в упаковці: 3000 шт |
товар відсутній |
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| K180J10C0GF5UL2 | VISHAY |
Category: MLCC THT capacitors Description: Capacitor: ceramic; 18pF; 50V; C0G (NP0); ±5%; THT; 2.5mm Type of capacitor: ceramic Capacitance: 18pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: THT Terminal pitch: 2.5mm Operating temperature: -55...125°C кількість в упаковці: 2500 шт |
товар відсутній |
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| K223K15X7RF53L2 | VISHAY |
Category: MLCC THT capacitors Description: Capacitor: ceramic; 22nF; 50V; X7R; ±10%; THT; 2.5mm Mounting: THT Terminal pitch: 2.5mm Operating temperature: -55...125°C Tolerance: ±10% Type of capacitor: ceramic Dielectric: X7R Capacitance: 22nF Operating voltage: 50V кількість в упаковці: 5000 шт |
товар відсутній |
| IRL640PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 299 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 88.81 грн |
| 10+ | 74.73 грн |
| 14+ | 68.92 грн |
| 39+ | 64.77 грн |
| 250+ | 63.93 грн |
| IRL640SPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 66nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 66nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 124 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 106.92 грн |
| 10+ | 90.51 грн |
| 12+ | 79.71 грн |
| 33+ | 75.56 грн |
| IRL640STRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 68A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 68A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 68A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 68A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 796 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 160.95 грн |
| 10+ | 131.06 грн |
| 14+ | 68.92 грн |
| 39+ | 64.77 грн |
| IRL640STRRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; Idm: 68A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; Idm: 68A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
| IRLD014PBF |
|
Виробник: VISHAY
IRLD014PBF THT N channel transistors
IRLD014PBF THT N channel transistors
на замовлення 110 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 71.45 грн |
| 34+ | 29.15 грн |
| 92+ | 27.56 грн |
| IRLD024PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.3W; DIP4
Case: DIP4
Mounting: THT
On-state resistance: 0.14Ω
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Drain-source voltage: 60V
Drain current: 1.8A
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.3W; DIP4
Case: DIP4
Mounting: THT
On-state resistance: 0.14Ω
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Drain-source voltage: 60V
Drain current: 1.8A
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 1431 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 67.96 грн |
| 6+ | 45.87 грн |
| 25+ | 39.44 грн |
| 27+ | 35.7 грн |
| 74+ | 34.04 грн |
| 500+ | 33.13 грн |
| IRLD110PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.7A; 1.3W; DIP4
Case: DIP4
Mounting: THT
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 6.1nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Drain-source voltage: 100V
Drain current: 0.7A
On-state resistance: 760mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.7A; 1.3W; DIP4
Case: DIP4
Mounting: THT
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 6.1nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Drain-source voltage: 100V
Drain current: 0.7A
On-state resistance: 760mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 704 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 73.32 грн |
| 8+ | 33.8 грн |
| 25+ | 29.23 грн |
| 37+ | 26.13 грн |
| 100+ | 26.07 грн |
| 102+ | 24.7 грн |
| 500+ | 24.33 грн |
| IRLD120PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.94A; 1.3W; DIP4
Case: DIP4
Mounting: THT
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Drain-source voltage: 100V
Drain current: 0.94A
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.94A; 1.3W; DIP4
Case: DIP4
Mounting: THT
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Drain-source voltage: 100V
Drain current: 0.94A
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 573 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 67.06 грн |
| 8+ | 36.56 грн |
| 25+ | 31.64 грн |
| 33+ | 29.06 грн |
| 90+ | 28.23 грн |
| 500+ | 26.99 грн |
| IRLI520GPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.2A; Idm: 29A; 37W; TO220FP
Kind of package: tube
Power dissipation: 37W
Polarisation: unipolar
Drain-source voltage: 100V
Case: TO220FP
Mounting: THT
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 29A
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
Drain current: 7.2A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.2A; Idm: 29A; 37W; TO220FP
Kind of package: tube
Power dissipation: 37W
Polarisation: unipolar
Drain-source voltage: 100V
Case: TO220FP
Mounting: THT
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 29A
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
Drain current: 7.2A
кількість в упаковці: 1 шт
товар відсутній
| IRLI530GPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.7A; Idm: 39A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.7A
Pulsed drain current: 39A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±10V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.7A; Idm: 39A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.7A
Pulsed drain current: 39A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±10V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IRLI630GPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 6.2A; Idm: 25A; 35W; TO220FP
Kind of package: tube
Power dissipation: 35W
Polarisation: unipolar
Drain-source voltage: 200V
Case: TO220FP
Mounting: THT
Gate charge: 40nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 25A
On-state resistance: 0.5Ω
Type of transistor: N-MOSFET
Drain current: 6.2A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 6.2A; Idm: 25A; 35W; TO220FP
Kind of package: tube
Power dissipation: 35W
Polarisation: unipolar
Drain-source voltage: 200V
Case: TO220FP
Mounting: THT
Gate charge: 40nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 25A
On-state resistance: 0.5Ω
Type of transistor: N-MOSFET
Drain current: 6.2A
кількість в упаковці: 1 шт
товар відсутній
| IRLI640GPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.9A; Idm: 40A; 40W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 66nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 40A
Drain-source voltage: 200V
Drain current: 9.9A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.9A; Idm: 40A; 40W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 66nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 40A
Drain-source voltage: 200V
Drain current: 9.9A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| IRLIZ14GPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 27W; TO220FP
Kind of package: tube
Power dissipation: 27W
Polarisation: unipolar
Drain-source voltage: 60V
Case: TO220FP
Mounting: THT
Gate charge: 8.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 32A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Drain current: 8A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 27W; TO220FP
Kind of package: tube
Power dissipation: 27W
Polarisation: unipolar
Drain-source voltage: 60V
Case: TO220FP
Mounting: THT
Gate charge: 8.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 32A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Drain current: 8A
кількість в упаковці: 1 шт
товар відсутній
| IRLIZ34GPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| IRLIZ44GPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| IRLL014TRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.7A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.7A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2708 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.28 грн |
| 11+ | 25.01 грн |
| 25+ | 22.83 грн |
| 55+ | 17.52 грн |
| 151+ | 16.52 грн |
| IRLL014TRPBF-BE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.7A; Idm: 22A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.7A
Pulsed drain current: 22A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.7A; Idm: 22A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.7A
Pulsed drain current: 22A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
| IRLL110TRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223
Mounting: SMD
Case: SOT223
Polarisation: unipolar
On-state resistance: 760mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Kind of package: reel; tape
Gate charge: 6.1nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Drain-source voltage: 100V
Drain current: 0.93A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223
Mounting: SMD
Case: SOT223
Polarisation: unipolar
On-state resistance: 760mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Kind of package: reel; tape
Gate charge: 6.1nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Drain-source voltage: 100V
Drain current: 0.93A
кількість в упаковці: 1 шт
на замовлення 3230 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 25.66 грн |
| 25+ | 21.9 грн |
| 53+ | 18.27 грн |
| 145+ | 17.27 грн |
| 2500+ | 16.61 грн |
| IRLR014PBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2977 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 54.55 грн |
| 10+ | 31.39 грн |
| 44+ | 22.09 грн |
| 121+ | 20.92 грн |
| 3000+ | 20.09 грн |
| IRLR014TRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| IRLR014TRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
| IRLR024PBF | |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IRLR024TRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| IRLR024TRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
| IRLR110PBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1581 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 69.75 грн |
| 8+ | 32.77 грн |
| 25+ | 28.31 грн |
| 43+ | 22.61 грн |
| 118+ | 21.38 грн |
| IRLR110TRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.3A
Pulsed drain current: 17A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 760mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.3A
Pulsed drain current: 17A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 760mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| IRLR110TRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Pulsed drain current: 17A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Pulsed drain current: 17A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 2000 шт
товар відсутній
| IRLR120PBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.7A; Idm: 31A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.7A; Idm: 31A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IRLR120TRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.7A; Idm: 31A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.7A; Idm: 31A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| IRLR120TRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.9A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.9A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1932 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 69.75 грн |
| 8+ | 34.84 грн |
| 25+ | 29.64 грн |
| 38+ | 25.69 грн |
| 104+ | 24.29 грн |
| IRLR120TRRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.7A; Idm: 31A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.7A; Idm: 31A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| IRLU014PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; 25W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.9A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 8.4nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; 25W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.9A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 8.4nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IRLU024PBF | |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.2A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9.2A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.2A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9.2A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 582 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 70.64 грн |
| 7+ | 37.94 грн |
| 25+ | 32.3 грн |
| 32+ | 30.3 грн |
| 75+ | 29.06 грн |
| 88+ | 28.65 грн |
| 300+ | 27.57 грн |
| IRLU110PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.3A
Pulsed drain current: 17A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±10V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 6.1nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.3A
Pulsed drain current: 17A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±10V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 6.1nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 964 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 76.9 грн |
| 8+ | 36.21 грн |
| 25+ | 31.3 грн |
| 41+ | 23.96 грн |
| 111+ | 22.66 грн |
| IRLZ14PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.2A; 43W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.2A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 8.4nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.2A; 43W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.2A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 8.4nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2455 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 71.54 грн |
| 7+ | 42.51 грн |
| 10+ | 36.87 грн |
| 33+ | 29.33 грн |
| 91+ | 27.73 грн |
| IRLZ14SPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 40A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 40A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IRLZ14STRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 40A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 40A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IRLZ24PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 758 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 68.85 грн |
| 7+ | 40.78 грн |
| 10+ | 35.45 грн |
| 31+ | 31.55 грн |
| 85+ | 29.89 грн |
| IRLZ34PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 110A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 110A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 110A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 110A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IRLZ44PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1007 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 95.68 грн |
| 4+ | 84.5 грн |
| 10+ | 71.41 грн |
| 16+ | 63.1 грн |
| 43+ | 58.95 грн |
| IRLZ44SPBF | |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IRLZ44STRLPBF |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
| IRLZ44STRRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
| K101J15C0GL5UH5 |
|
Виробник: VISHAY
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 100pF; 500V; C0G (NP0); ±5%; THT; 5mm
Mounting: THT
Operating temperature: -55...125°C
Terminal pitch: 5mm
Tolerance: ±5%
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 0.1nF
Operating voltage: 500V
кількість в упаковці: 2500 шт
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 100pF; 500V; C0G (NP0); ±5%; THT; 5mm
Mounting: THT
Operating temperature: -55...125°C
Terminal pitch: 5mm
Tolerance: ±5%
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 0.1nF
Operating voltage: 500V
кількість в упаковці: 2500 шт
товар відсутній
| K101K10C0GF5UL2 |
|
Виробник: VISHAY
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 100pF; 50V; C0G (NP0); ±10%; THT; 2.5mm
Mounting: THT
Operating temperature: -55...125°C
Terminal pitch: 2.5mm
Tolerance: ±10%
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 0.1nF
Operating voltage: 50V
кількість в упаковці: 2500 шт
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 100pF; 50V; C0G (NP0); ±10%; THT; 2.5mm
Mounting: THT
Operating temperature: -55...125°C
Terminal pitch: 2.5mm
Tolerance: ±10%
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 0.1nF
Operating voltage: 50V
кількість в упаковці: 2500 шт
товар відсутній
| K102K15X7RH53L2 |
|
Виробник: VISHAY
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 1nF; 100V; X7R; ±10%; THT; 2.5mm
Mounting: THT
Tolerance: ±10%
Operating temperature: -55...125°C
Terminal pitch: 2.5mm
Operating voltage: 100V
Dielectric: X7R
Type of capacitor: ceramic
Capacitance: 1nF
кількість в упаковці: 5000 шт
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 1nF; 100V; X7R; ±10%; THT; 2.5mm
Mounting: THT
Tolerance: ±10%
Operating temperature: -55...125°C
Terminal pitch: 2.5mm
Operating voltage: 100V
Dielectric: X7R
Type of capacitor: ceramic
Capacitance: 1nF
кількість в упаковці: 5000 шт
товар відсутній
| K102K15X7RH5TH5 |
|
Виробник: VISHAY
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 1nF; 100V; X7R; ±10%; THT; 5mm
Mounting: THT
Tolerance: ±10%
Operating temperature: -55...125°C
Terminal pitch: 5mm
Operating voltage: 100V
Dielectric: X7R
Type of capacitor: ceramic
Capacitance: 1nF
кількість в упаковці: 4000 шт
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 1nF; 100V; X7R; ±10%; THT; 5mm
Mounting: THT
Tolerance: ±10%
Operating temperature: -55...125°C
Terminal pitch: 5mm
Operating voltage: 100V
Dielectric: X7R
Type of capacitor: ceramic
Capacitance: 1nF
кількість в упаковці: 4000 шт
товар відсутній
| K103K10X7RF5UH5 |
|
Виробник: VISHAY
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 10nF; 50V; X7R; ±10%; THT; 5mm
Mounting: THT
Operating temperature: -55...125°C
Operating voltage: 50V
Terminal pitch: 5mm
Capacitance: 10nF
Dielectric: X7R
Type of capacitor: ceramic
Tolerance: ±10%
кількість в упаковці: 2500 шт
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 10nF; 50V; X7R; ±10%; THT; 5mm
Mounting: THT
Operating temperature: -55...125°C
Operating voltage: 50V
Terminal pitch: 5mm
Capacitance: 10nF
Dielectric: X7R
Type of capacitor: ceramic
Tolerance: ±10%
кількість в упаковці: 2500 шт
товар відсутній
| K103K10X7RH5UL2 |
|
Виробник: VISHAY
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 10nF; 100V; X7R; ±10%; THT; 2.5mm
Type of capacitor: ceramic
Capacitance: 10nF
Operating voltage: 100V
Dielectric: X7R
Tolerance: ±10%
Mounting: THT
Terminal pitch: 2.5mm
Operating temperature: -55...125°C
кількість в упаковці: 2500 шт
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 10nF; 100V; X7R; ±10%; THT; 2.5mm
Type of capacitor: ceramic
Capacitance: 10nF
Operating voltage: 100V
Dielectric: X7R
Tolerance: ±10%
Mounting: THT
Terminal pitch: 2.5mm
Operating temperature: -55...125°C
кількість в упаковці: 2500 шт
товар відсутній
| K103K15X7RF53L2 |
|
Виробник: VISHAY
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 10nF; 50V; X7R; ±10%; THT; 2.5mm
Mounting: THT
Operating temperature: -55...125°C
Operating voltage: 50V
Terminal pitch: 2.5mm
Capacitance: 10nF
Dielectric: X7R
Type of capacitor: ceramic
Tolerance: ±10%
кількість в упаковці: 1000 шт
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 10nF; 50V; X7R; ±10%; THT; 2.5mm
Mounting: THT
Operating temperature: -55...125°C
Operating voltage: 50V
Terminal pitch: 2.5mm
Capacitance: 10nF
Dielectric: X7R
Type of capacitor: ceramic
Tolerance: ±10%
кількість в упаковці: 1000 шт
товар відсутній
| K103K15X7RF5UH5 |
|
Виробник: VISHAY
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 10nF; 50V; X7R; ±10%; THT; 5mm
Mounting: THT
Operating temperature: -55...125°C
Operating voltage: 50V
Terminal pitch: 5mm
Capacitance: 10nF
Dielectric: X7R
Type of capacitor: ceramic
Tolerance: ±10%
кількість в упаковці: 2500 шт
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 10nF; 50V; X7R; ±10%; THT; 5mm
Mounting: THT
Operating temperature: -55...125°C
Operating voltage: 50V
Terminal pitch: 5mm
Capacitance: 10nF
Dielectric: X7R
Type of capacitor: ceramic
Tolerance: ±10%
кількість в упаковці: 2500 шт
товар відсутній
| K104K10X7RF5UH5 |
|
Виробник: VISHAY
Category: THT ceramic capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; THT; 5mm
Mounting: THT
Operating temperature: -55...125°C
Terminal pitch: 5mm
Tolerance: ±10%
Type of capacitor: ceramic
Dielectric: X7R
Capacitance: 0.1µF
Operating voltage: 50V
кількість в упаковці: 10 шт
Category: THT ceramic capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; THT; 5mm
Mounting: THT
Operating temperature: -55...125°C
Terminal pitch: 5mm
Tolerance: ±10%
Type of capacitor: ceramic
Dielectric: X7R
Capacitance: 0.1µF
Operating voltage: 50V
кількість в упаковці: 10 шт
на замовлення 1510 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 10.55 грн |
| 100+ | 5.9 грн |
| 300+ | 3.29 грн |
| 810+ | 3.11 грн |
| K104K10X7RF5UL2 |
|
Виробник: VISHAY
Category: THT ceramic capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; THT; 2.5mm
Mounting: THT
Operating temperature: -55...125°C
Terminal pitch: 2.5mm
Tolerance: ±10%
Type of capacitor: ceramic
Dielectric: X7R
Capacitance: 0.1µF
Operating voltage: 50V
кількість в упаковці: 10 шт
Category: THT ceramic capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; THT; 2.5mm
Mounting: THT
Operating temperature: -55...125°C
Terminal pitch: 2.5mm
Tolerance: ±10%
Type of capacitor: ceramic
Dielectric: X7R
Capacitance: 0.1µF
Operating voltage: 50V
кількість в упаковці: 10 шт
на замовлення 20 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 13.41 грн |
| 100+ | 5.54 грн |
| 290+ | 3.36 грн |
| 790+ | 3.18 грн |
| K104K15X7RF5TH5 |
|
Виробник: VISHAY
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; THT; 5mm
Mounting: THT
Operating temperature: -55...125°C
Terminal pitch: 5mm
Tolerance: ±10%
Type of capacitor: ceramic
Dielectric: X7R
Capacitance: 0.1µF
Operating voltage: 50V
кількість в упаковці: 4000 шт
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; THT; 5mm
Mounting: THT
Operating temperature: -55...125°C
Terminal pitch: 5mm
Tolerance: ±10%
Type of capacitor: ceramic
Dielectric: X7R
Capacitance: 0.1µF
Operating voltage: 50V
кількість в упаковці: 4000 шт
товар відсутній
| K104K15X7RF5TL2 |
|
Виробник: VISHAY
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; THT; 2.5mm
Mounting: THT
Operating temperature: -55...125°C
Terminal pitch: 2.5mm
Tolerance: ±10%
Type of capacitor: ceramic
Dielectric: X7R
Capacitance: 0.1µF
Operating voltage: 50V
кількість в упаковці: 4000 шт
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; THT; 2.5mm
Mounting: THT
Operating temperature: -55...125°C
Terminal pitch: 2.5mm
Tolerance: ±10%
Type of capacitor: ceramic
Dielectric: X7R
Capacitance: 0.1µF
Operating voltage: 50V
кількість в упаковці: 4000 шт
товар відсутній
| K104K20X7RH5TH5 |
|
Виробник: VISHAY
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 100nF; 100V; X7R; ±10%; THT; 5mm
Mounting: THT
Operating temperature: -55...125°C
Terminal pitch: 5mm
Tolerance: ±10%
Type of capacitor: ceramic
Dielectric: X7R
Capacitance: 0.1µF
Operating voltage: 100V
кількість в упаковці: 10 шт
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 100nF; 100V; X7R; ±10%; THT; 5mm
Mounting: THT
Operating temperature: -55...125°C
Terminal pitch: 5mm
Tolerance: ±10%
Type of capacitor: ceramic
Dielectric: X7R
Capacitance: 0.1µF
Operating voltage: 100V
кількість в упаковці: 10 шт
на замовлення 950 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.63 грн |
| 100+ | 12.33 грн |
| 110+ | 8.88 грн |
| 300+ | 8.39 грн |
| 3000+ | 8.14 грн |
| K104M15X7RF5TH5 |
|
Виробник: VISHAY
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±20%; THT; 5mm
Mounting: THT
Operating temperature: -55...125°C
Terminal pitch: 5mm
Tolerance: ±20%
Type of capacitor: ceramic
Dielectric: X7R
Capacitance: 0.1µF
Operating voltage: 50V
кількість в упаковці: 4000 шт
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±20%; THT; 5mm
Mounting: THT
Operating temperature: -55...125°C
Terminal pitch: 5mm
Tolerance: ±20%
Type of capacitor: ceramic
Dielectric: X7R
Capacitance: 0.1µF
Operating voltage: 50V
кількість в упаковці: 4000 шт
товар відсутній
| K154K20X7RF5TL2 |
|
Виробник: VISHAY
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 150nF; 50V; X7R; ±10%; THT; 2.5mm
Mounting: THT
Operating temperature: -55...125°C
Dielectric: X7R
Type of capacitor: ceramic
Tolerance: ±10%
Terminal pitch: 2.5mm
Capacitance: 0.15µF
Operating voltage: 50V
кількість в упаковці: 3000 шт
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 150nF; 50V; X7R; ±10%; THT; 2.5mm
Mounting: THT
Operating temperature: -55...125°C
Dielectric: X7R
Type of capacitor: ceramic
Tolerance: ±10%
Terminal pitch: 2.5mm
Capacitance: 0.15µF
Operating voltage: 50V
кількість в упаковці: 3000 шт
товар відсутній
| K180J10C0GF5UL2 |
|
Виробник: VISHAY
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 18pF; 50V; C0G (NP0); ±5%; THT; 2.5mm
Type of capacitor: ceramic
Capacitance: 18pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: THT
Terminal pitch: 2.5mm
Operating temperature: -55...125°C
кількість в упаковці: 2500 шт
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 18pF; 50V; C0G (NP0); ±5%; THT; 2.5mm
Type of capacitor: ceramic
Capacitance: 18pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: THT
Terminal pitch: 2.5mm
Operating temperature: -55...125°C
кількість в упаковці: 2500 шт
товар відсутній
| K223K15X7RF53L2 |
|
Виробник: VISHAY
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 22nF; 50V; X7R; ±10%; THT; 2.5mm
Mounting: THT
Terminal pitch: 2.5mm
Operating temperature: -55...125°C
Tolerance: ±10%
Type of capacitor: ceramic
Dielectric: X7R
Capacitance: 22nF
Operating voltage: 50V
кількість в упаковці: 5000 шт
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 22nF; 50V; X7R; ±10%; THT; 2.5mm
Mounting: THT
Terminal pitch: 2.5mm
Operating temperature: -55...125°C
Tolerance: ±10%
Type of capacitor: ceramic
Dielectric: X7R
Capacitance: 22nF
Operating voltage: 50V
кількість в упаковці: 5000 шт
товар відсутній