Продукція > YANGJIE TECHNOLOGY > Всі товари виробника YANGJIE TECHNOLOGY (3031) > Сторінка 4 з 51
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2SA1576A-R | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: SOT-323 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SA1576A-S | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: SOT-323 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SA812-M5 | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-23 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SA812-M6 | Yangjie Technology |
Description: SOT-23 PNP 0.2W -0.1A -60V Trans Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-23 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SB1188-Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 32 V Current - Collector (Ic) (Max): 2 A Part Status: Active Supplier Device Package: SOT-89 Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Operating Temperature: -55°C ~ 150°C (TJ) |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
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2SB1188-R | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 32 V Current - Collector (Ic) (Max): 2 A Part Status: Active Supplier Device Package: SOT-89 Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
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2SB1197-Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Frequency - Transition: 50MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 200 mW |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SB1198-R | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Part Status: Active Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SB1198-RQ | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Part Status: Active Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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| 2SC1623-L6 | Yangjie Technology |
Description: SOT-23 NPN 0.2W 0.1A 60V Transis Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-23 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SC2383P-O | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V Frequency - Transition: 20MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 500 mW |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
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2SC2383P-Y | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V Frequency - Transition: 20MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 500 mW |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
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2SC2412-Q | YANGJIE TECHNOLOGY |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SOT23 Current gain: 120...270 Mounting: SMD Kind of package: reel; tape Frequency: 160MHz Application: automotive industry |
на замовлення 5750 шт: термін постачання 14-30 дні (днів) |
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2SC2412-R | YANGJIE TECHNOLOGY |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SOT23 Current gain: 180...390 Mounting: SMD Kind of package: reel; tape Frequency: 160MHz |
на замовлення 4825 шт: термін постачання 14-30 дні (днів) |
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2SC2412-S | YANGJIE TECHNOLOGY |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SOT23 Current gain: 270...560 Mounting: SMD Kind of package: reel; tape Frequency: 160MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC2412-Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: SOT-23 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SC2412-R | Yangjie Technology |
Description: SOT-23 NPN 0.2W 0.15A 60V Transi Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 150MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SC2412-S | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: SOT-23 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SC3052-E | YANGJIE TECHNOLOGY |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.2A; 0.15W; SOT23 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.15W Collector current: 0.2A Collector-emitter voltage: 50V Current gain: 150...300 Frequency: 180MHz Polarisation: bipolar Case: SOT23 Type of transistor: NPN |
на замовлення 12900 шт: термін постачання 14-30 дні (днів) |
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2SC3052-E | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 200 mA Part Status: Active Supplier Device Package: SOT-23 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Operating Temperature: -55°C ~ 125°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SC3052-F | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Supplier Device Package: SOT-23 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Operating Temperature: -55°C ~ 125°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 200 mA Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SC3052-G | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 200 mA Part Status: Active Supplier Device Package: SOT-23 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Operating Temperature: -55°C ~ 125°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SC4081-Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Part Status: Active Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SC4081-S | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Part Status: Active Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SC4617-Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Tape & Reel (TR) Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: SOT-523 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SC4617-R | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V Frequency - Transition: 180MHz Supplier Device Package: SOT-523 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SC4617-S | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: SOT-523 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SD1766-Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 32 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: SOT-89 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
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2SD1766-R | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - SiPackaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V Frequency - Transition: 100MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 500 mW |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
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3324P | Yangjie Technology |
Description: TVS - Diodes DFN2510 3.3V 4 li Power Line Protection: No Power - Peak Pulse: 65W Voltage - Clamping (Max) @ Ipp: 13V Voltage - Breakdown (Min): 5V Unidirectional Channels: 4 Supplier Device Package: DFN2510-10L Voltage - Reverse Standoff (Typ): 3.3V (Max) Current - Peak Pulse (10/1000µs): 5A (8/20µs) Capacitance @ Frequency: 0.5pF @ 1MHz Applications: DVI, HDMI, USB Operating Temperature: -40°C ~ 85°C (TA) Type: Steering (Rail to Rail) Mounting Type: Surface Mount Package / Case: 10-XFDFN Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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5.0SMDJ13A | YANGJIE TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 5kW; 14.4÷15.9V; 232.6A; unidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 13V Breakdown voltage: 14.4...15.9V Max. forward impulse current: 232.6A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 0.5mA Manufacturer series: 5.0SMDJ |
на замовлення 2978 шт: термін постачання 14-30 дні (днів) |
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| 5.0SMDJ28A | YANGJIE TECHNOLOGY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 31.1÷34.4V; 110.1A; unidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 110.1A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 5µA Manufacturer series: 5.0SMDJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 5.0SMDJ33A | YANGJIE TECHNOLOGY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 36.7÷40.6V; 93.8A; unidirectional; DO214AB,SMC Type of diode: TVS Semiconductor structure: unidirectional Mounting: SMD Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 93.8A Manufacturer series: 5.0SMDJ Peak pulse power dissipation: 5kW Case: DO214AB; SMC Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 5.0SMDJ40A | YANGJIE TECHNOLOGY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 44.4÷49.1V; 77.5A; unidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 77.5A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 5µA Manufacturer series: 5.0SMDJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 5.0SMDJ40CA | YANGJIE TECHNOLOGY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 44.4÷49.1V; 77.5A; bidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 77.5A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 5µA Manufacturer series: 5.0SMDJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 5.0SMDJ54A | YANGJIE TECHNOLOGY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 60÷66.3V; 57.4A; unidirectional; DO214AB,SMC Type of diode: TVS Semiconductor structure: unidirectional Mounting: SMD Max. forward impulse current: 57.4A Max. off-state voltage: 54V Breakdown voltage: 60...66.3V Manufacturer series: 5.0SMDJ Peak pulse power dissipation: 5kW Case: DO214AB; SMC Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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5.0SMDJ58A | YANGJIE TECHNOLOGY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 64.4÷71.2V; 53.4A; unidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 53.4A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 5µA Manufacturer series: 5.0SMDJ |
на замовлення 666 шт: термін постачання 14-30 дні (днів) |
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| 5.0SMDJ64CA | YANGJIE TECHNOLOGY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 71.1÷78.6V; 48.5A; bidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 64V Breakdown voltage: 71.1...78.6V Max. forward impulse current: 48.5A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 5µA Manufacturer series: 5.0SMDJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 5.0SMDJ78CA | YANGJIE TECHNOLOGY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 86.7÷95.8V; 39.7A; bidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 78V Breakdown voltage: 86.7...95.8V Max. forward impulse current: 39.7A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 5µA Manufacturer series: 5.0SMDJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 5.0SMDJ90CA | YANGJIE TECHNOLOGY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 100÷111V; 34.2A; bidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 90V Breakdown voltage: 100...111V Max. forward impulse current: 34.2A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 5µA Manufacturer series: 5.0SMDJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
6A05GS | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 50V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Type of diode: rectifying Max. forward impulse current: 200A Semiconductor structure: single diode Mounting: THT Case: DO27 Max. off-state voltage: 50V Kind of package: tape Features of semiconductor devices: glass passivated Max. forward voltage: 1.1V Load current: 6A |
на замовлення 1212 шт: термін постачання 14-30 дні (днів) |
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6A10GS | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Semiconductor structure: single diode Case: DO27 Features of semiconductor devices: glass passivated Mounting: THT Type of diode: rectifying Max. forward voltage: 1.1V Load current: 6A Max. off-state voltage: 1kV Max. forward impulse current: 200A Kind of package: tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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6A1GS | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Type of diode: rectifying Case: DO27 Mounting: THT Max. off-state voltage: 0.1kV Load current: 6A Semiconductor structure: single diode Max. forward voltage: 1.1V Max. forward impulse current: 200A Kind of package: tape Features of semiconductor devices: glass passivated |
на замовлення 375 шт: термін постачання 14-30 дні (днів) |
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6A2GS | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 6A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Kind of package: tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1.1V |
на замовлення 284 шт: термін постачання 14-30 дні (днів) |
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ABS10 | YANGJIE TECHNOLOGY |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 1kV; If: 1A; Ifsm: 35A; ABS; SMT Electrical mounting: SMT Case: ABS Load current: 1A Max. forward impulse current: 35A Max. off-state voltage: 1kV Kind of package: reel; tape Type of bridge rectifier: single-phase |
на замовлення 744 шт: термін постачання 14-30 дні (днів) |
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ABS1506 | Yangjie Technology |
Description: ABS 600V 1.5A Diodes Bridge Re Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 400000 шт: термін постачання 21-31 дні (днів) |
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ABS1508 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers ABS 1 Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 400000 шт: термін постачання 21-31 дні (днів) |
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ABS1510 | Yangjie Technology |
Description: ABS 1000V 1.5A Diodes Bridge R Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 400000 шт: термін постачання 21-31 дні (днів) |
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ABS2 | YANGJIE TECHNOLOGY |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 200V; If: 1A; Ifsm: 35A; ABS; SMT Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Load current: 1A Max. forward impulse current: 35A Max. off-state voltage: 200V Case: ABS |
на замовлення 7150 шт: термін постачання 14-30 дні (днів) |
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ABS6 | YANGJIE TECHNOLOGY |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 600V; If: 1A; Ifsm: 35A; ABS; SMT Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Load current: 1A Max. forward impulse current: 35A Case: ABS Max. off-state voltage: 0.6kV |
на замовлення 14 шт: термін постачання 14-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
|
ASM24 | Yangjie Technology |
Description: TVS - Diodes SOT-23 24V 2 line Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 40pF @ 1MHz (Max) Current - Peak Pulse (10/1000µs): 6A (8/20µs) Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: SOT-23 Unidirectional Channels: 2 Voltage - Breakdown (Min): 27V Voltage - Clamping (Max) @ Ipp: 45V Power - Peak Pulse: 270W Power Line Protection: No Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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AU2804S8 | Yangjie Technology |
Description: TVS - Diodes SOP-8 2.8V 4 line Operating Temperature: -55°C ~ 125°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Part Status: Active Power Line Protection: No Power - Peak Pulse: 100W Voltage - Clamping (Max) @ Ipp: 10V Voltage - Breakdown (Min): 3.5V Bidirectional Channels: 4 Supplier Device Package: 8-SO Voltage - Reverse Standoff (Typ): 2.8V (Max) Current - Peak Pulse (10/1000µs): 10A Capacitance @ Frequency: 4.5pF @ 1MHz Applications: General Purpose |
на замовлення 250000 шт: термін постачання 21-31 дні (днів) |
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AZ23B10 | Yangjie Technology |
Description: Diodes - Rectifiers - Single SOT Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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AZ23B11 | Yangjie Technology |
Description: Diodes - Rectifiers - Single SOT Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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AZ23B12 | Yangjie Technology |
Description: Diodes - Rectifiers - Single SOT Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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AZ23B13 | Yangjie Technology |
Description: Diodes - Rectifiers - Single SOT Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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AZ23B15 | Yangjie Technology |
Description: Diodes - Rectifiers - Single SOT Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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AZ23B16 | Yangjie Technology |
Description: Diodes - Rectifiers - Single SOT Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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AZ23B18 | Yangjie Technology |
Description: Diodes - Rectifiers - Single SOT Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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AZ23B20 | Yangjie Technology |
Description: Diodes - Rectifiers - Single SOT Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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| 2SA1576A-R |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.33 грн |
| 15000+ | 1.21 грн |
| 30000+ | 1.13 грн |
| 60000+ | 0.99 грн |
| 120000+ | 0.92 грн |
| 300000+ | 0.85 грн |
| 2SA1576A-S |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.33 грн |
| 15000+ | 1.21 грн |
| 30000+ | 1.13 грн |
| 60000+ | 0.99 грн |
| 120000+ | 0.92 грн |
| 300000+ | 0.85 грн |
| 2SA812-M5 |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.02 грн |
| 15000+ | 0.91 грн |
| 30000+ | 0.83 грн |
| 60000+ | 0.71 грн |
| 120000+ | 0.64 грн |
| 300000+ | 0.57 грн |
| 2SA812-M6 |
Виробник: Yangjie Technology
Description: SOT-23 PNP 0.2W -0.1A -60V Trans
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: SOT-23 PNP 0.2W -0.1A -60V Trans
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.02 грн |
| 15000+ | 0.91 грн |
| 30000+ | 0.83 грн |
| 60000+ | 0.71 грн |
| 120000+ | 0.64 грн |
| 300000+ | 0.57 грн |
| 2SB1188-Q |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Description: Transistors - Bipolar (BJT) - Si
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 3.14 грн |
| 5000+ | 2.87 грн |
| 10000+ | 2.72 грн |
| 20000+ | 2.34 грн |
| 40000+ | 2.13 грн |
| 100000+ | 1.98 грн |
| 2SB1188-R |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 2.82 грн |
| 5000+ | 2.57 грн |
| 10000+ | 2.42 грн |
| 20000+ | 2.13 грн |
| 40000+ | 1.91 грн |
| 100000+ | 1.77 грн |
| 2SB1197-Q |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.57 грн |
| 15000+ | 2.33 грн |
| 30000+ | 2.19 грн |
| 60000+ | 1.92 грн |
| 120000+ | 1.72 грн |
| 300000+ | 1.59 грн |
| 2SB1198-R |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.53 грн |
| 15000+ | 3.25 грн |
| 30000+ | 3.02 грн |
| 60000+ | 2.69 грн |
| 120000+ | 2.41 грн |
| 300000+ | 2.27 грн |
| 2SB1198-RQ |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.23 грн |
| 15000+ | 3.85 грн |
| 30000+ | 3.62 грн |
| 60000+ | 3.19 грн |
| 120000+ | 2.90 грн |
| 300000+ | 2.69 грн |
| 2SC1623-L6 |
Виробник: Yangjie Technology
Description: SOT-23 NPN 0.2W 0.1A 60V Transis
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: SOT-23 NPN 0.2W 0.1A 60V Transis
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.02 грн |
| 15000+ | 0.91 грн |
| 30000+ | 0.83 грн |
| 60000+ | 0.71 грн |
| 120000+ | 0.64 грн |
| 300000+ | 0.57 грн |
| 2SC2383P-O |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 6.43 грн |
| 5000+ | 5.81 грн |
| 10000+ | 5.43 грн |
| 20000+ | 4.82 грн |
| 40000+ | 4.32 грн |
| 100000+ | 4.04 грн |
| 2SC2383P-Y |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 6.43 грн |
| 5000+ | 5.81 грн |
| 10000+ | 5.43 грн |
| 20000+ | 4.82 грн |
| 40000+ | 4.32 грн |
| 100000+ | 4.04 грн |
| 2SC2412-Q |
![]() |
Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Application: automotive industry
на замовлення 5750 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 150+ | 3.04 грн |
| 300+ | 1.42 грн |
| 500+ | 1.27 грн |
| 3000+ | 1.12 грн |
| 2SC2412-R |
![]() |
Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
на замовлення 4825 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 150+ | 3.09 грн |
| 325+ | 1.32 грн |
| 500+ | 1.18 грн |
| 3000+ | 1.05 грн |
| 2SC2412-S |
![]() |
Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
товару немає в наявності
В кошику
од. на суму грн.
| 2SC2412-Q |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.25 грн |
| 15000+ | 1.13 грн |
| 30000+ | 1.06 грн |
| 60000+ | 0.92 грн |
| 120000+ | 0.85 грн |
| 300000+ | 0.78 грн |
| 2SC2412-R |
Виробник: Yangjie Technology
Description: SOT-23 NPN 0.2W 0.15A 60V Transi
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: SOT-23 NPN 0.2W 0.15A 60V Transi
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.33 грн |
| 15000+ | 1.21 грн |
| 30000+ | 1.13 грн |
| 60000+ | 0.99 грн |
| 120000+ | 0.92 грн |
| 300000+ | 0.85 грн |
| 2SC2412-S |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.18 грн |
| 15000+ | 1.06 грн |
| 30000+ | 0.98 грн |
| 60000+ | 0.85 грн |
| 120000+ | 0.78 грн |
| 300000+ | 0.71 грн |
| 2SC3052-E |
Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.2A; 0.15W; SOT23
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.15W
Collector current: 0.2A
Collector-emitter voltage: 50V
Current gain: 150...300
Frequency: 180MHz
Polarisation: bipolar
Case: SOT23
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.2A; 0.15W; SOT23
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.15W
Collector current: 0.2A
Collector-emitter voltage: 50V
Current gain: 150...300
Frequency: 180MHz
Polarisation: bipolar
Case: SOT23
Type of transistor: NPN
на замовлення 12900 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 200+ | 2.48 грн |
| 250+ | 1.79 грн |
| 500+ | 1.07 грн |
| 3000+ | 0.96 грн |
| 2SC3052-E |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.18 грн |
| 15000+ | 1.06 грн |
| 30000+ | 0.98 грн |
| 60000+ | 0.85 грн |
| 120000+ | 0.78 грн |
| 300000+ | 0.71 грн |
| 2SC3052-F |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Description: Transistors - Bipolar (BJT) - Si
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.18 грн |
| 15000+ | 1.06 грн |
| 30000+ | 0.98 грн |
| 60000+ | 0.85 грн |
| 120000+ | 0.78 грн |
| 300000+ | 0.71 грн |
| 2SC3052-G |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.18 грн |
| 15000+ | 1.06 грн |
| 30000+ | 0.98 грн |
| 60000+ | 0.85 грн |
| 120000+ | 0.78 грн |
| 300000+ | 0.71 грн |
| 2SC4081-Q |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.49 грн |
| 15000+ | 1.36 грн |
| 30000+ | 1.28 грн |
| 60000+ | 1.06 грн |
| 120000+ | 0.99 грн |
| 300000+ | 0.92 грн |
| 2SC4081-S |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.33 грн |
| 15000+ | 1.21 грн |
| 30000+ | 1.13 грн |
| 60000+ | 0.99 грн |
| 120000+ | 0.92 грн |
| 300000+ | 0.85 грн |
| 2SC4617-Q |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-523
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Description: Transistors - Bipolar (BJT) - Si
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-523
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.57 грн |
| 15000+ | 1.43 грн |
| 30000+ | 1.36 грн |
| 60000+ | 1.20 грн |
| 120000+ | 1.06 грн |
| 300000+ | 0.99 грн |
| 2SC4617-R |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.41 грн |
| 15000+ | 1.28 грн |
| 30000+ | 1.21 грн |
| 60000+ | 1.06 грн |
| 120000+ | 0.99 грн |
| 300000+ | 0.92 грн |
| 2SC4617-S |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-523
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-523
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.18 грн |
| 15000+ | 1.06 грн |
| 30000+ | 0.98 грн |
| 60000+ | 0.85 грн |
| 120000+ | 0.78 грн |
| 300000+ | 0.71 грн |
| 2SD1766-Q |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 3.14 грн |
| 5000+ | 2.87 грн |
| 10000+ | 2.72 грн |
| 20000+ | 2.34 грн |
| 40000+ | 2.13 грн |
| 100000+ | 1.98 грн |
| 2SD1766-R |
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Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 500 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 500 mW
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 2.82 грн |
| 5000+ | 2.57 грн |
| 10000+ | 2.42 грн |
| 20000+ | 2.13 грн |
| 40000+ | 1.91 грн |
| 100000+ | 1.77 грн |
| 3324P |
Виробник: Yangjie Technology
Description: TVS - Diodes DFN2510 3.3V 4 li
Power Line Protection: No
Power - Peak Pulse: 65W
Voltage - Clamping (Max) @ Ipp: 13V
Voltage - Breakdown (Min): 5V
Unidirectional Channels: 4
Supplier Device Package: DFN2510-10L
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 0.5pF @ 1MHz
Applications: DVI, HDMI, USB
Operating Temperature: -40°C ~ 85°C (TA)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 10-XFDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TVS - Diodes DFN2510 3.3V 4 li
Power Line Protection: No
Power - Peak Pulse: 65W
Voltage - Clamping (Max) @ Ipp: 13V
Voltage - Breakdown (Min): 5V
Unidirectional Channels: 4
Supplier Device Package: DFN2510-10L
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 0.5pF @ 1MHz
Applications: DVI, HDMI, USB
Operating Temperature: -40°C ~ 85°C (TA)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 10-XFDFN
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.68 грн |
| 15000+ | 3.32 грн |
| 30000+ | 3.17 грн |
| 60000+ | 2.76 грн |
| 120000+ | 2.48 грн |
| 300000+ | 2.34 грн |
| 5.0SMDJ13A |
Виробник: YANGJIE TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 14.4÷15.9V; 232.6A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 232.6A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 0.5mA
Manufacturer series: 5.0SMDJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 14.4÷15.9V; 232.6A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 232.6A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 0.5mA
Manufacturer series: 5.0SMDJ
на замовлення 2978 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 58.52 грн |
| 16+ | 27.76 грн |
| 100+ | 24.49 грн |
| 500+ | 21.80 грн |
| 1000+ | 19.88 грн |
| 5.0SMDJ28A |
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Виробник: YANGJIE TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 31.1÷34.4V; 110.1A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 110.1A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 5.0SMDJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 31.1÷34.4V; 110.1A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 110.1A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 5.0SMDJ
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| 5.0SMDJ33A |
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Виробник: YANGJIE TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.8A; unidirectional; DO214AB,SMC
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.8A
Manufacturer series: 5.0SMDJ
Peak pulse power dissipation: 5kW
Case: DO214AB; SMC
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.8A; unidirectional; DO214AB,SMC
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.8A
Manufacturer series: 5.0SMDJ
Peak pulse power dissipation: 5kW
Case: DO214AB; SMC
Leakage current: 5µA
товару немає в наявності
В кошику
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| 5.0SMDJ40A |
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Виробник: YANGJIE TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 44.4÷49.1V; 77.5A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 77.5A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 5.0SMDJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 44.4÷49.1V; 77.5A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 77.5A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 5.0SMDJ
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| 5.0SMDJ40CA |
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Виробник: YANGJIE TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 44.4÷49.1V; 77.5A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 77.5A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 5.0SMDJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 44.4÷49.1V; 77.5A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 77.5A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 5.0SMDJ
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од. на суму грн.
| 5.0SMDJ54A |
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Виробник: YANGJIE TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 60÷66.3V; 57.4A; unidirectional; DO214AB,SMC
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Max. forward impulse current: 57.4A
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Manufacturer series: 5.0SMDJ
Peak pulse power dissipation: 5kW
Case: DO214AB; SMC
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 60÷66.3V; 57.4A; unidirectional; DO214AB,SMC
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Max. forward impulse current: 57.4A
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Manufacturer series: 5.0SMDJ
Peak pulse power dissipation: 5kW
Case: DO214AB; SMC
Leakage current: 5µA
товару немає в наявності
В кошику
од. на суму грн.
| 5.0SMDJ58A |
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Виробник: YANGJIE TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 64.4÷71.2V; 53.4A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 53.4A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 5.0SMDJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 64.4÷71.2V; 53.4A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 53.4A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 5.0SMDJ
на замовлення 666 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 58.52 грн |
| 16+ | 27.76 грн |
| 100+ | 24.49 грн |
| 500+ | 21.80 грн |
| 5.0SMDJ64CA |
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Виробник: YANGJIE TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 71.1÷78.6V; 48.5A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 48.5A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 5.0SMDJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 71.1÷78.6V; 48.5A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 48.5A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 5.0SMDJ
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од. на суму грн.
| 5.0SMDJ78CA |
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Виробник: YANGJIE TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 86.7÷95.8V; 39.7A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 39.7A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 5.0SMDJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 86.7÷95.8V; 39.7A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 39.7A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 5.0SMDJ
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од. на суму грн.
| 5.0SMDJ90CA |
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Виробник: YANGJIE TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 100÷111V; 34.2A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 34.2A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 5.0SMDJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 100÷111V; 34.2A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 34.2A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 5.0SMDJ
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од. на суму грн.
| 6A05GS |
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Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Max. forward impulse current: 200A
Semiconductor structure: single diode
Mounting: THT
Case: DO27
Max. off-state voltage: 50V
Kind of package: tape
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
Load current: 6A
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Max. forward impulse current: 200A
Semiconductor structure: single diode
Mounting: THT
Case: DO27
Max. off-state voltage: 50V
Kind of package: tape
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
Load current: 6A
на замовлення 1212 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 77.67 грн |
| 8+ | 53.93 грн |
| 22+ | 19.71 грн |
| 26+ | 16.19 грн |
| 100+ | 12.58 грн |
| 250+ | 10.06 грн |
| 500+ | 8.97 грн |
| 6A10GS |
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Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Semiconductor structure: single diode
Case: DO27
Features of semiconductor devices: glass passivated
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.1V
Load current: 6A
Max. off-state voltage: 1kV
Max. forward impulse current: 200A
Kind of package: tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Semiconductor structure: single diode
Case: DO27
Features of semiconductor devices: glass passivated
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.1V
Load current: 6A
Max. off-state voltage: 1kV
Max. forward impulse current: 200A
Kind of package: tape
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од. на суму грн.
| 6A1GS |
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Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Case: DO27
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Max. forward impulse current: 200A
Kind of package: tape
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Case: DO27
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Max. forward impulse current: 200A
Kind of package: tape
Features of semiconductor devices: glass passivated
на замовлення 375 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 69.54 грн |
| 9+ | 48.64 грн |
| 24+ | 17.78 грн |
| 29+ | 14.51 грн |
| 100+ | 11.32 грн |
| 250+ | 9.06 грн |
| 6A2GS |
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Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 6A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 6A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
на замовлення 284 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 52.38 грн |
| 12+ | 36.06 грн |
| 32+ | 13.25 грн |
| 39+ | 10.82 грн |
| 100+ | 8.39 грн |
| 250+ | 6.71 грн |
| ABS10 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 1A; Ifsm: 35A; ABS; SMT
Electrical mounting: SMT
Case: ABS
Load current: 1A
Max. forward impulse current: 35A
Max. off-state voltage: 1kV
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 1A; Ifsm: 35A; ABS; SMT
Electrical mounting: SMT
Case: ABS
Load current: 1A
Max. forward impulse current: 35A
Max. off-state voltage: 1kV
Kind of package: reel; tape
Type of bridge rectifier: single-phase
на замовлення 744 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 12.52 грн |
| 90+ | 4.77 грн |
| 100+ | 4.30 грн |
| 500+ | 3.80 грн |
| ABS1506 |
Виробник: Yangjie Technology
Description: ABS 600V 1.5A Diodes Bridge Re
Packaging: Tape & Reel (TR)
Part Status: Active
Description: ABS 600V 1.5A Diodes Bridge Re
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 400000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 4.70 грн |
| 20000+ | 4.30 грн |
| 40000+ | 4.08 грн |
| 80000+ | 3.54 грн |
| 160000+ | 3.19 грн |
| 400000+ | 2.98 грн |
| ABS1508 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers ABS 1
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Diodes - Bridge Rectifiers ABS 1
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 400000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 4.70 грн |
| 20000+ | 4.30 грн |
| 40000+ | 4.08 грн |
| 80000+ | 3.54 грн |
| 160000+ | 3.19 грн |
| 400000+ | 2.98 грн |
| ABS1510 |
Виробник: Yangjie Technology
Description: ABS 1000V 1.5A Diodes Bridge R
Packaging: Tape & Reel (TR)
Part Status: Active
Description: ABS 1000V 1.5A Diodes Bridge R
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 400000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 3.61 грн |
| 20000+ | 3.25 грн |
| 40000+ | 3.09 грн |
| 80000+ | 2.69 грн |
| 160000+ | 2.41 грн |
| 400000+ | 2.27 грн |
| ABS2 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 1A; Ifsm: 35A; ABS; SMT
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward impulse current: 35A
Max. off-state voltage: 200V
Case: ABS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 1A; Ifsm: 35A; ABS; SMT
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward impulse current: 35A
Max. off-state voltage: 200V
Case: ABS
на замовлення 7150 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 12.28 грн |
| 110+ | 3.94 грн |
| 120+ | 3.57 грн |
| 500+ | 3.16 грн |
| 4000+ | 2.89 грн |
| ABS6 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 1A; Ifsm: 35A; ABS; SMT
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward impulse current: 35A
Case: ABS
Max. off-state voltage: 0.6kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 1A; Ifsm: 35A; ABS; SMT
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward impulse current: 35A
Case: ABS
Max. off-state voltage: 0.6kV
на замовлення 14 шт:
термін постачання 14-30 дні (днів)В кошику од. на суму грн.
| ASM24 |
Виробник: Yangjie Technology
Description: TVS - Diodes SOT-23 24V 2 line
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23
Unidirectional Channels: 2
Voltage - Breakdown (Min): 27V
Voltage - Clamping (Max) @ Ipp: 45V
Power - Peak Pulse: 270W
Power Line Protection: No
Part Status: Active
Description: TVS - Diodes SOT-23 24V 2 line
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23
Unidirectional Channels: 2
Voltage - Breakdown (Min): 27V
Voltage - Clamping (Max) @ Ipp: 45V
Power - Peak Pulse: 270W
Power Line Protection: No
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.21 грн |
| 15000+ | 2.94 грн |
| 30000+ | 2.79 грн |
| 60000+ | 2.48 грн |
| 120000+ | 2.20 грн |
| 300000+ | 2.05 грн |
| AU2804S8 |
Виробник: Yangjie Technology
Description: TVS - Diodes SOP-8 2.8V 4 line
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 100W
Voltage - Clamping (Max) @ Ipp: 10V
Voltage - Breakdown (Min): 3.5V
Bidirectional Channels: 4
Supplier Device Package: 8-SO
Voltage - Reverse Standoff (Typ): 2.8V (Max)
Current - Peak Pulse (10/1000µs): 10A
Capacitance @ Frequency: 4.5pF @ 1MHz
Applications: General Purpose
Description: TVS - Diodes SOP-8 2.8V 4 line
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 100W
Voltage - Clamping (Max) @ Ipp: 10V
Voltage - Breakdown (Min): 3.5V
Bidirectional Channels: 4
Supplier Device Package: 8-SO
Voltage - Reverse Standoff (Typ): 2.8V (Max)
Current - Peak Pulse (10/1000µs): 10A
Capacitance @ Frequency: 4.5pF @ 1MHz
Applications: General Purpose
на замовлення 250000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 24.06 грн |
| 12500+ | 21.89 грн |
| 25000+ | 20.61 грн |
| 50000+ | 18.13 грн |
| 100000+ | 16.29 грн |
| 250000+ | 15.09 грн |
| AZ23B10 |
Виробник: Yangjie Technology
Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.98 грн |
| 15000+ | 1.84 грн |
| 30000+ | 1.69 грн |
| 60000+ | 1.52 грн |
| 120000+ | 1.39 грн |
| 300000+ | 1.26 грн |
| AZ23B11 |
Виробник: Yangjie Technology
Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.98 грн |
| 15000+ | 1.84 грн |
| 30000+ | 1.69 грн |
| 60000+ | 1.52 грн |
| 120000+ | 1.39 грн |
| 300000+ | 1.26 грн |
| AZ23B12 |
Виробник: Yangjie Technology
Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.98 грн |
| 15000+ | 1.84 грн |
| 30000+ | 1.69 грн |
| 60000+ | 1.52 грн |
| 120000+ | 1.39 грн |
| 300000+ | 1.26 грн |
| AZ23B13 |
Виробник: Yangjie Technology
Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.98 грн |
| 15000+ | 1.84 грн |
| 30000+ | 1.69 грн |
| 60000+ | 1.52 грн |
| 120000+ | 1.39 грн |
| 300000+ | 1.26 грн |
| AZ23B15 |
Виробник: Yangjie Technology
Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.98 грн |
| 15000+ | 1.84 грн |
| 30000+ | 1.69 грн |
| 60000+ | 1.52 грн |
| 120000+ | 1.39 грн |
| 300000+ | 1.26 грн |
| AZ23B16 |
Виробник: Yangjie Technology
Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.98 грн |
| 15000+ | 1.84 грн |
| 30000+ | 1.69 грн |
| 60000+ | 1.52 грн |
| 120000+ | 1.39 грн |
| 300000+ | 1.26 грн |
| AZ23B18 |
Виробник: Yangjie Technology
Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.98 грн |
| 15000+ | 1.84 грн |
| 30000+ | 1.69 грн |
| 60000+ | 1.52 грн |
| 120000+ | 1.39 грн |
| 300000+ | 1.26 грн |
| AZ23B20 |
Виробник: Yangjie Technology
Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.98 грн |
| 15000+ | 1.84 грн |
| 30000+ | 1.69 грн |
| 60000+ | 1.52 грн |
| 120000+ | 1.39 грн |
| 300000+ | 1.26 грн |














