Продукція > YANGJIE TECHNOLOGY > Всі товари виробника YANGJIE TECHNOLOGY (2889) > Сторінка 3 з 49
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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1N5404G | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 3A; Ifsm: 200A; DO27; tape; Ufmax: 1.1V Max. off-state voltage: 0.4kV Load current: 3A Kind of package: tape Semiconductor structure: single diode Case: DO27 Type of diode: rectifying Mounting: THT Max. forward impulse current: 200A Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
на замовлення 3667 шт: термін постачання 14-30 дні (днів) |
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1N5406 | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 3A; Ifsm: 150A; DO27; tape; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 150A Case: DO27 Kind of package: tape Max. forward voltage: 1V |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||||
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1N5407 | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 3A; Ifsm: 150A; DO27; tape; Ufmax: 1V Mounting: THT Max. forward impulse current: 150A Max. forward voltage: 1V Max. off-state voltage: 0.8kV Load current: 3A Kind of package: tape Semiconductor structure: single diode Case: DO27 Type of diode: rectifying |
на замовлення 941 шт: термін постачання 14-30 дні (днів) |
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1N5408 | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 3A; Ifsm: 150A; DO27; tape; Ufmax: 1V Max. off-state voltage: 1kV Load current: 3A Kind of package: tape Semiconductor structure: single diode Case: DO27 Type of diode: rectifying Mounting: THT Max. forward impulse current: 150A Max. forward voltage: 1V |
на замовлення 1005 шт: термін постачання 14-30 дні (днів) |
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1N5408G | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 3A; Ifsm: 200A; DO27; tape; Ufmax: 1.1V Features of semiconductor devices: glass passivated Max. off-state voltage: 1kV Load current: 3A Kind of package: tape Semiconductor structure: single diode Case: DO27 Type of diode: rectifying Mounting: THT Max. forward impulse current: 200A Max. forward voltage: 1.1V |
на замовлення 3229 шт: термін постачання 14-30 дні (днів) |
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1N5822 | YANGJIE TECHNOLOGY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 3A; DO27; Ufmax: 0.525V; tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO27 Max. forward voltage: 0.525V Max. forward impulse current: 80A Kind of package: tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| 1N5822 | Yangjie Technology |
Діод Шотткі вивідний, Io, A = 3, Uзвор, В = 40, If, А = 3, Тексп, °C = -55...+125,... Діоди Корпус: DO-27 Од. вим: шткількість в упаковці: 1000 шт |
на замовлення 30 шт: термін постачання 3 дні (днів) |
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1SS355Q | Yangjie Technology |
Description: SOD-323 80V 0.15A Diodes RectiPackaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2N7002 | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.272A Pulsed drain current: 1.5A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||||||
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2N7002K | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.272A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1.5A Version: ESD Technology: TRENCH POWER MV |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||||||
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2N7002KC | Yangjie Technology |
Description: SOT-23 N 60V 0.3A Transistors FPackaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2N7002KCDW | Yangjie Technology |
Description: SOT-363 N 60V 0.3A TransistorsPackaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2N7002KCDWQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - SiPackaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2N7002KCE | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - SiPackaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2N7002KCQ | Yangjie Technology |
Description: SOT-23 N 60V 0.3A Transistors FPackaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2N7002KCW | Yangjie Technology |
Description: SOT-323 N 60V 0.3A TransistorsPackaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2N7002KCWQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - SiPackaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2N7002KCX | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - SiPackaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2N7002W | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.272A Pulsed drain current: 1A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||||||
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2SA1037-Q | Yangjie Technology | Description: Transistors - Bipolar (BJT) - Si |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SA1037-Q | YANGJIE TECHNOLOGY |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23 Frequency: 140MHz Type of transistor: PNP Mounting: SMD Collector current: 0.15A Power dissipation: 0.2W Collector-emitter voltage: 50V Current gain: 120...270 Kind of package: reel; tape Application: automotive industry Polarisation: bipolar Case: SOT23 |
на замовлення 1075 шт: термін постачання 14-30 дні (днів) |
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2SA1037-S | Yangjie Technology | Description: Transistors - Bipolar (BJT) - Si |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SA1576A-Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: SOT-323 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SA1576A-R | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: SOT-323 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SA1576A-S | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: SOT-323 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SA812-M5 | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-23 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SA812-M6 | Yangjie Technology |
Description: SOT-23 PNP 0.2W -0.1A -60V Trans Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-23 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SB1188-Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 32 V Current - Collector (Ic) (Max): 2 A Part Status: Active Supplier Device Package: SOT-89 Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Operating Temperature: -55°C ~ 150°C (TJ) |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
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2SB1188-R | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 32 V Current - Collector (Ic) (Max): 2 A Part Status: Active Supplier Device Package: SOT-89 Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
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2SB1197-Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Frequency - Transition: 50MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 200 mW |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SB1198-R | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Part Status: Active Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SB1198-RQ | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Part Status: Active Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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| 2SC1623-L6 | Yangjie Technology |
Description: SOT-23 NPN 0.2W 0.1A 60V Transis Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-23 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SC2383P-O | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V Frequency - Transition: 20MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 500 mW |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
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2SC2383P-Y | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V Frequency - Transition: 20MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 500 mW |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
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2SC2412-Q | YANGJIE TECHNOLOGY |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SOT23 Current gain: 120...270 Mounting: SMD Kind of package: reel; tape Frequency: 160MHz Application: automotive industry |
на замовлення 5750 шт: термін постачання 14-30 дні (днів) |
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2SC2412-Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: SOT-23 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SC2412-R | Yangjie Technology |
Description: SOT-23 NPN 0.2W 0.15A 60V Transi Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 150MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SC2412-R | YANGJIE TECHNOLOGY |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SOT23 Current gain: 180...390 Mounting: SMD Kind of package: reel; tape Frequency: 160MHz |
на замовлення 4825 шт: термін постачання 14-30 дні (днів) |
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2SC2412-S | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: SOT-23 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SC2412-S | YANGJIE TECHNOLOGY |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SOT23 Current gain: 270...560 Mounting: SMD Kind of package: reel; tape Frequency: 160MHz |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||||||
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2SC3052-E | YANGJIE TECHNOLOGY |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.2A; 0.15W; SOT23 Mounting: SMD Collector-emitter voltage: 50V Power dissipation: 0.15W Polarisation: bipolar Type of transistor: NPN Current gain: 150...300 Kind of package: reel; tape Case: SOT23 Frequency: 180MHz Collector current: 0.2A |
на замовлення 12825 шт: термін постачання 14-30 дні (днів) |
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2SC3052-E | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 200 mA Part Status: Active Supplier Device Package: SOT-23 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Operating Temperature: -55°C ~ 125°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SC3052-F | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Supplier Device Package: SOT-23 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Operating Temperature: -55°C ~ 125°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 200 mA Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SC3052-G | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 200 mA Part Status: Active Supplier Device Package: SOT-23 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Operating Temperature: -55°C ~ 125°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SC4081-Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Part Status: Active Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SC4081-S | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Part Status: Active Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SC4617-Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Tape & Reel (TR) Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: SOT-523 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SC4617-S | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: SOT-523 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SD1766-Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 32 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: SOT-89 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
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2SD1766-R | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - SiPackaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V Frequency - Transition: 100MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 500 mW |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
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2SD1781-Q | YANGJIE TECHNOLOGY |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.8A; 0.2W; SOT23 Mounting: SMD Collector-emitter voltage: 32V Power dissipation: 0.2W Polarisation: bipolar Type of transistor: NPN Current gain: 120...270 Kind of package: reel; tape Case: SOT23 Collector current: 0.8A |
на замовлення 2940 шт: термін постачання 14-30 дні (днів) |
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2SD1782-R | YANGJIE TECHNOLOGY |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 0.5A; 0.2W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.2W Polarisation: bipolar Type of transistor: NPN Current gain: 180...390 Frequency: 180MHz Collector current: 0.5A Collector-emitter voltage: 80V |
на замовлення 1875 шт: термін постачання 14-30 дні (днів) |
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3324P | Yangjie Technology |
Description: TVS - Diodes DFN2510 3.3V 4 li Power Line Protection: No Power - Peak Pulse: 65W Voltage - Clamping (Max) @ Ipp: 13V Voltage - Breakdown (Min): 5V Unidirectional Channels: 4 Supplier Device Package: DFN2510-10L Voltage - Reverse Standoff (Typ): 3.3V (Max) Current - Peak Pulse (10/1000µs): 5A (8/20µs) Capacitance @ Frequency: 0.5pF @ 1MHz Applications: DVI, HDMI, USB Operating Temperature: -40°C ~ 85°C (TA) Type: Steering (Rail to Rail) Mounting Type: Surface Mount Package / Case: 10-XFDFN Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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5.0SMDJ13A | YANGJIE TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 5kW; 14.4÷15.9V; 232.6A; unidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 13V Breakdown voltage: 14.4...15.9V Max. forward impulse current: 232.6A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 0.5mA Manufacturer series: 5.0SMDJ |
на замовлення 2978 шт: термін постачання 14-30 дні (днів) |
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| 5.0SMDJ33A | YANGJIE TECHNOLOGY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 36.7÷40.6V; 93.8A; unidirectional; DO214AB,SMC Type of diode: TVS Semiconductor structure: unidirectional Mounting: SMD Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 93.8A Manufacturer series: 5.0SMDJ Peak pulse power dissipation: 5kW Case: DO214AB; SMC Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 5.0SMDJ40CA | YANGJIE TECHNOLOGY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 44.4÷49.1V; 77.5A; bidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 77.5A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 5µA Manufacturer series: 5.0SMDJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 5.0SMDJ43A | YANGJIE TECHNOLOGY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 47.8÷52.8V; 72A; unidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 43V Max. forward impulse current: 72A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 5µA Breakdown voltage: 47.8...52.8V Manufacturer series: 5.0SMDJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 5.0SMDJ43CA | YANGJIE TECHNOLOGY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 47.8÷52.8V; 72A; bidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 43V Breakdown voltage: 47.8...52.8V Max. forward impulse current: 72A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 5µA Manufacturer series: 5.0SMDJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 5.0SMDJ54A | YANGJIE TECHNOLOGY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 60÷66.3V; 57.4A; unidirectional; DO214AB,SMC Type of diode: TVS Semiconductor structure: unidirectional Mounting: SMD Max. forward impulse current: 57.4A Max. off-state voltage: 54V Breakdown voltage: 60...66.3V Manufacturer series: 5.0SMDJ Peak pulse power dissipation: 5kW Case: DO214AB; SMC Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. |
| 1N5404G |
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Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; Ifsm: 200A; DO27; tape; Ufmax: 1.1V
Max. off-state voltage: 0.4kV
Load current: 3A
Kind of package: tape
Semiconductor structure: single diode
Case: DO27
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 200A
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; Ifsm: 200A; DO27; tape; Ufmax: 1.1V
Max. off-state voltage: 0.4kV
Load current: 3A
Kind of package: tape
Semiconductor structure: single diode
Case: DO27
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 200A
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
на замовлення 3667 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 66.00 грн |
| 10+ | 45.97 грн |
| 26+ | 16.85 грн |
| 31+ | 13.80 грн |
| 100+ | 10.75 грн |
| 250+ | 8.63 грн |
| 500+ | 7.62 грн |
| 1250+ | 6.43 грн |
| 2500+ | 5.76 грн |
| 1N5406 |
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Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 150A; DO27; tape; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Case: DO27
Kind of package: tape
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 150A; DO27; tape; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Case: DO27
Kind of package: tape
Max. forward voltage: 1V
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| 1N5407 |
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Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; Ifsm: 150A; DO27; tape; Ufmax: 1V
Mounting: THT
Max. forward impulse current: 150A
Max. forward voltage: 1V
Max. off-state voltage: 0.8kV
Load current: 3A
Kind of package: tape
Semiconductor structure: single diode
Case: DO27
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; Ifsm: 150A; DO27; tape; Ufmax: 1V
Mounting: THT
Max. forward impulse current: 150A
Max. forward voltage: 1V
Max. off-state voltage: 0.8kV
Load current: 3A
Kind of package: tape
Semiconductor structure: single diode
Case: DO27
Type of diode: rectifying
на замовлення 941 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 45.58 грн |
| 14+ | 31.07 грн |
| 38+ | 11.43 грн |
| 46+ | 9.40 грн |
| 100+ | 7.28 грн |
| 250+ | 5.84 грн |
| 500+ | 5.25 грн |
| 1N5408 |
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Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 150A; DO27; tape; Ufmax: 1V
Max. off-state voltage: 1kV
Load current: 3A
Kind of package: tape
Semiconductor structure: single diode
Case: DO27
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 150A
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 150A; DO27; tape; Ufmax: 1V
Max. off-state voltage: 1kV
Load current: 3A
Kind of package: tape
Semiconductor structure: single diode
Case: DO27
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 150A
Max. forward voltage: 1V
на замовлення 1005 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 56.25 грн |
| 11+ | 39.19 грн |
| 30+ | 14.39 грн |
| 36+ | 11.77 грн |
| 100+ | 9.14 грн |
| 250+ | 7.36 грн |
| 500+ | 6.52 грн |
| 1N5408G |
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Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 200A; DO27; tape; Ufmax: 1.1V
Features of semiconductor devices: glass passivated
Max. off-state voltage: 1kV
Load current: 3A
Kind of package: tape
Semiconductor structure: single diode
Case: DO27
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 200A
Max. forward voltage: 1.1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 200A; DO27; tape; Ufmax: 1.1V
Features of semiconductor devices: glass passivated
Max. off-state voltage: 1kV
Load current: 3A
Kind of package: tape
Semiconductor structure: single diode
Case: DO27
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 200A
Max. forward voltage: 1.1V
на замовлення 3229 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 65.64 грн |
| 10+ | 45.71 грн |
| 26+ | 16.76 грн |
| 31+ | 13.71 грн |
| 100+ | 10.67 грн |
| 250+ | 8.55 грн |
| 500+ | 7.62 грн |
| 1250+ | 6.35 грн |
| 2500+ | 5.76 грн |
| 1N5822 |
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Виробник: YANGJIE TECHNOLOGY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO27; Ufmax: 0.525V; tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO27
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO27; Ufmax: 0.525V; tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO27
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: tape
товару немає в наявності
В кошику
од. на суму грн.
| 1N5822 |
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Виробник: Yangjie Technology
Діод Шотткі вивідний, Io, A = 3, Uзвор, В = 40, If, А = 3, Тексп, °C = -55...+125,... Діоди Корпус: DO-27 Од. вим: шт
кількість в упаковці: 1000 шт
Діод Шотткі вивідний, Io, A = 3, Uзвор, В = 40, If, А = 3, Тексп, °C = -55...+125,... Діоди Корпус: DO-27 Од. вим: шт
кількість в упаковці: 1000 шт
на замовлення 30 шт:
термін постачання 3 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 4.87 грн |
| 5000+ | 4.54 грн |
| 1SS355Q |
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Виробник: Yangjie Technology
Description: SOD-323 80V 0.15A Diodes Recti
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOD-323 80V 0.15A Diodes Recti
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.27 грн |
| 15000+ | 1.14 грн |
| 30000+ | 1.07 грн |
| 60000+ | 0.93 грн |
| 120000+ | 0.86 грн |
| 300000+ | 0.79 грн |
| 2N7002 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| 2N7002K |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.5A
Version: ESD
Technology: TRENCH POWER MV
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.5A
Version: ESD
Technology: TRENCH POWER MV
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| 2N7002KC |
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Виробник: Yangjie Technology
Description: SOT-23 N 60V 0.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 N 60V 0.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.27 грн |
| 15000+ | 1.14 грн |
| 30000+ | 1.07 грн |
| 60000+ | 0.93 грн |
| 120000+ | 0.86 грн |
| 300000+ | 0.79 грн |
| 2N7002KCDW |
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Виробник: Yangjie Technology
Description: SOT-363 N 60V 0.3A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-363 N 60V 0.3A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.14 грн |
| 15000+ | 1.90 грн |
| 30000+ | 1.83 грн |
| 60000+ | 1.57 грн |
| 120000+ | 1.43 грн |
| 300000+ | 1.29 грн |
| 2N7002KCDWQ |
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Виробник: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.32 грн |
| 15000+ | 3.05 грн |
| 30000+ | 2.90 грн |
| 60000+ | 2.50 грн |
| 120000+ | 2.29 грн |
| 300000+ | 2.07 грн |
| 2N7002KCE |
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Виробник: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.58 грн |
| 15000+ | 1.45 грн |
| 30000+ | 1.30 грн |
| 60000+ | 1.14 грн |
| 120000+ | 1.07 грн |
| 300000+ | 1.00 грн |
| 2N7002KCQ |
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Виробник: Yangjie Technology
Description: SOT-23 N 60V 0.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 N 60V 0.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.61 грн |
| 15000+ | 2.36 грн |
| 30000+ | 2.21 грн |
| 60000+ | 1.93 грн |
| 120000+ | 1.79 грн |
| 300000+ | 1.64 грн |
| 2N7002KCW |
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Виробник: Yangjie Technology
Description: SOT-323 N 60V 0.3A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-323 N 60V 0.3A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.50 грн |
| 15000+ | 1.37 грн |
| 30000+ | 1.30 грн |
| 60000+ | 1.14 грн |
| 120000+ | 1.00 грн |
| 300000+ | 0.93 грн |
| 2N7002KCWQ |
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Виробник: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.93 грн |
| 15000+ | 2.67 грн |
| 30000+ | 2.51 грн |
| 60000+ | 2.22 грн |
| 120000+ | 1.93 грн |
| 300000+ | 1.79 грн |
| 2N7002KCX |
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Виробник: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.45 грн |
| 15000+ | 2.21 грн |
| 30000+ | 2.06 грн |
| 60000+ | 1.86 грн |
| 120000+ | 1.64 грн |
| 300000+ | 1.50 грн |
| 2N7002W |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| 2SA1037-Q |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Description: Transistors - Bipolar (BJT) - Si
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.16 грн |
| 15000+ | 1.04 грн |
| 30000+ | 0.98 грн |
| 60000+ | 0.85 грн |
| 120000+ | 0.78 грн |
| 300000+ | 0.72 грн |
| 2SA1037-Q |
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Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Frequency: 140MHz
Type of transistor: PNP
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 120...270
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Case: SOT23
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Frequency: 140MHz
Type of transistor: PNP
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 120...270
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Case: SOT23
на замовлення 1075 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 3.10 грн |
| 300+ | 1.44 грн |
| 500+ | 1.30 грн |
| 2SA1037-S |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Description: Transistors - Bipolar (BJT) - Si
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.08 грн |
| 15000+ | 0.98 грн |
| 30000+ | 0.91 грн |
| 60000+ | 0.78 грн |
| 120000+ | 0.72 грн |
| 300000+ | 0.65 грн |
| 2SA1576A-Q |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.50 грн |
| 15000+ | 1.37 грн |
| 30000+ | 1.30 грн |
| 60000+ | 1.07 грн |
| 120000+ | 1.00 грн |
| 300000+ | 0.93 грн |
| 2SA1576A-R |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.34 грн |
| 15000+ | 1.22 грн |
| 30000+ | 1.14 грн |
| 60000+ | 1.00 грн |
| 120000+ | 0.93 грн |
| 300000+ | 0.86 грн |
| 2SA1576A-S |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.34 грн |
| 15000+ | 1.22 грн |
| 30000+ | 1.14 грн |
| 60000+ | 1.00 грн |
| 120000+ | 0.93 грн |
| 300000+ | 0.86 грн |
| 2SA812-M5 |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.03 грн |
| 15000+ | 0.91 грн |
| 30000+ | 0.84 грн |
| 60000+ | 0.71 грн |
| 120000+ | 0.64 грн |
| 300000+ | 0.57 грн |
| 2SA812-M6 |
Виробник: Yangjie Technology
Description: SOT-23 PNP 0.2W -0.1A -60V Trans
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: SOT-23 PNP 0.2W -0.1A -60V Trans
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.03 грн |
| 15000+ | 0.91 грн |
| 30000+ | 0.84 грн |
| 60000+ | 0.71 грн |
| 120000+ | 0.64 грн |
| 300000+ | 0.57 грн |
| 2SB1188-Q |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Description: Transistors - Bipolar (BJT) - Si
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 3.16 грн |
| 5000+ | 2.90 грн |
| 10000+ | 2.74 грн |
| 20000+ | 2.36 грн |
| 40000+ | 2.14 грн |
| 100000+ | 2.00 грн |
| 2SB1188-R |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 2.85 грн |
| 5000+ | 2.59 грн |
| 10000+ | 2.44 грн |
| 20000+ | 2.14 грн |
| 40000+ | 1.93 грн |
| 100000+ | 1.79 грн |
| 2SB1197-Q |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.59 грн |
| 15000+ | 2.35 грн |
| 30000+ | 2.21 грн |
| 60000+ | 1.94 грн |
| 120000+ | 1.74 грн |
| 300000+ | 1.61 грн |
| 2SB1198-R |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.56 грн |
| 15000+ | 3.28 грн |
| 30000+ | 3.05 грн |
| 60000+ | 2.72 грн |
| 120000+ | 2.43 грн |
| 300000+ | 2.29 грн |
| 2SB1198-RQ |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.27 грн |
| 15000+ | 3.89 грн |
| 30000+ | 3.66 грн |
| 60000+ | 3.22 грн |
| 120000+ | 2.93 грн |
| 300000+ | 2.72 грн |
| 2SC1623-L6 |
Виробник: Yangjie Technology
Description: SOT-23 NPN 0.2W 0.1A 60V Transis
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: SOT-23 NPN 0.2W 0.1A 60V Transis
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.03 грн |
| 15000+ | 0.91 грн |
| 30000+ | 0.84 грн |
| 60000+ | 0.71 грн |
| 120000+ | 0.64 грн |
| 300000+ | 0.57 грн |
| 2SC2383P-O |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 6.49 грн |
| 5000+ | 5.87 грн |
| 10000+ | 5.49 грн |
| 20000+ | 4.86 грн |
| 40000+ | 4.36 грн |
| 100000+ | 4.08 грн |
| 2SC2383P-Y |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 6.49 грн |
| 5000+ | 5.87 грн |
| 10000+ | 5.49 грн |
| 20000+ | 4.86 грн |
| 40000+ | 4.36 грн |
| 100000+ | 4.08 грн |
| 2SC2412-Q |
![]() |
Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Application: automotive industry
на замовлення 5750 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.52 грн |
| 350+ | 1.28 грн |
| 500+ | 1.11 грн |
| 3000+ | 1.02 грн |
| 2SC2412-Q |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.27 грн |
| 15000+ | 1.14 грн |
| 30000+ | 1.07 грн |
| 60000+ | 0.93 грн |
| 120000+ | 0.86 грн |
| 300000+ | 0.79 грн |
| 2SC2412-R |
Виробник: Yangjie Technology
Description: SOT-23 NPN 0.2W 0.15A 60V Transi
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: SOT-23 NPN 0.2W 0.15A 60V Transi
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.34 грн |
| 15000+ | 1.22 грн |
| 30000+ | 1.14 грн |
| 60000+ | 1.00 грн |
| 120000+ | 0.93 грн |
| 300000+ | 0.86 грн |
| 2SC2412-R |
![]() |
Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
на замовлення 4825 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.60 грн |
| 325+ | 1.33 грн |
| 500+ | 1.16 грн |
| 3000+ | 1.06 грн |
| 2SC2412-S |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.19 грн |
| 15000+ | 1.07 грн |
| 30000+ | 0.99 грн |
| 60000+ | 0.86 грн |
| 120000+ | 0.79 грн |
| 300000+ | 0.71 грн |
| 2SC2412-S |
![]() |
Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| 2SC3052-E |
Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.2A; 0.15W; SOT23
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.15W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 150...300
Kind of package: reel; tape
Case: SOT23
Frequency: 180MHz
Collector current: 0.2A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.2A; 0.15W; SOT23
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.15W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 150...300
Kind of package: reel; tape
Case: SOT23
Frequency: 180MHz
Collector current: 0.2A
на замовлення 12825 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.50 грн |
| 250+ | 1.80 грн |
| 500+ | 1.08 грн |
| 3000+ | 0.97 грн |
| 2SC3052-E |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.19 грн |
| 15000+ | 1.07 грн |
| 30000+ | 0.99 грн |
| 60000+ | 0.86 грн |
| 120000+ | 0.79 грн |
| 300000+ | 0.71 грн |
| 2SC3052-F |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Description: Transistors - Bipolar (BJT) - Si
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.19 грн |
| 15000+ | 1.07 грн |
| 30000+ | 0.99 грн |
| 60000+ | 0.86 грн |
| 120000+ | 0.79 грн |
| 300000+ | 0.71 грн |
| 2SC3052-G |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.19 грн |
| 15000+ | 1.07 грн |
| 30000+ | 0.99 грн |
| 60000+ | 0.86 грн |
| 120000+ | 0.79 грн |
| 300000+ | 0.71 грн |
| 2SC4081-Q |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.50 грн |
| 15000+ | 1.37 грн |
| 30000+ | 1.30 грн |
| 60000+ | 1.07 грн |
| 120000+ | 1.00 грн |
| 300000+ | 0.93 грн |
| 2SC4081-S |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.34 грн |
| 15000+ | 1.22 грн |
| 30000+ | 1.14 грн |
| 60000+ | 1.00 грн |
| 120000+ | 0.93 грн |
| 300000+ | 0.86 грн |
| 2SC4617-Q |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-523
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Description: Transistors - Bipolar (BJT) - Si
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-523
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.58 грн |
| 15000+ | 1.45 грн |
| 30000+ | 1.37 грн |
| 60000+ | 1.22 грн |
| 120000+ | 1.07 грн |
| 300000+ | 1.00 грн |
| 2SC4617-S |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-523
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-523
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.19 грн |
| 15000+ | 1.07 грн |
| 30000+ | 0.99 грн |
| 60000+ | 0.86 грн |
| 120000+ | 0.79 грн |
| 300000+ | 0.71 грн |
| 2SD1766-Q |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 3.16 грн |
| 5000+ | 2.90 грн |
| 10000+ | 2.74 грн |
| 20000+ | 2.36 грн |
| 40000+ | 2.14 грн |
| 100000+ | 2.00 грн |
| 2SD1766-R |
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Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 500 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 500 mW
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 2.85 грн |
| 5000+ | 2.59 грн |
| 10000+ | 2.44 грн |
| 20000+ | 2.14 грн |
| 40000+ | 1.93 грн |
| 100000+ | 1.79 грн |
| 2SD1781-Q |
Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 0.2W; SOT23
Mounting: SMD
Collector-emitter voltage: 32V
Power dissipation: 0.2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 120...270
Kind of package: reel; tape
Case: SOT23
Collector current: 0.8A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 0.2W; SOT23
Mounting: SMD
Collector-emitter voltage: 32V
Power dissipation: 0.2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 120...270
Kind of package: reel; tape
Case: SOT23
Collector current: 0.8A
на замовлення 2940 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 11.50 грн |
| 70+ | 6.10 грн |
| 135+ | 3.21 грн |
| 500+ | 2.89 грн |
| 2SD1782-R |
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Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.2W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 180...390
Frequency: 180MHz
Collector current: 0.5A
Collector-emitter voltage: 80V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.2W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 180...390
Frequency: 180MHz
Collector current: 0.5A
Collector-emitter voltage: 80V
на замовлення 1875 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 55+ | 8.60 грн |
| 110+ | 4.00 грн |
| 205+ | 2.10 грн |
| 500+ | 1.89 грн |
| 3324P |
Виробник: Yangjie Technology
Description: TVS - Diodes DFN2510 3.3V 4 li
Power Line Protection: No
Power - Peak Pulse: 65W
Voltage - Clamping (Max) @ Ipp: 13V
Voltage - Breakdown (Min): 5V
Unidirectional Channels: 4
Supplier Device Package: DFN2510-10L
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 0.5pF @ 1MHz
Applications: DVI, HDMI, USB
Operating Temperature: -40°C ~ 85°C (TA)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 10-XFDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TVS - Diodes DFN2510 3.3V 4 li
Power Line Protection: No
Power - Peak Pulse: 65W
Voltage - Clamping (Max) @ Ipp: 13V
Voltage - Breakdown (Min): 5V
Unidirectional Channels: 4
Supplier Device Package: DFN2510-10L
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 0.5pF @ 1MHz
Applications: DVI, HDMI, USB
Operating Temperature: -40°C ~ 85°C (TA)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 10-XFDFN
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.72 грн |
| 15000+ | 3.35 грн |
| 30000+ | 3.20 грн |
| 60000+ | 2.79 грн |
| 120000+ | 2.50 грн |
| 300000+ | 2.36 грн |
| 5.0SMDJ13A |
Виробник: YANGJIE TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 14.4÷15.9V; 232.6A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 232.6A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 0.5mA
Manufacturer series: 5.0SMDJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 14.4÷15.9V; 232.6A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 232.6A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 0.5mA
Manufacturer series: 5.0SMDJ
на замовлення 2978 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 59.44 грн |
| 16+ | 28.19 грн |
| 100+ | 24.89 грн |
| 500+ | 22.18 грн |
| 1000+ | 20.23 грн |
| 5.0SMDJ33A |
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Виробник: YANGJIE TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.8A; unidirectional; DO214AB,SMC
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.8A
Manufacturer series: 5.0SMDJ
Peak pulse power dissipation: 5kW
Case: DO214AB; SMC
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.8A; unidirectional; DO214AB,SMC
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.8A
Manufacturer series: 5.0SMDJ
Peak pulse power dissipation: 5kW
Case: DO214AB; SMC
Leakage current: 5µA
товару немає в наявності
В кошику
од. на суму грн.
| 5.0SMDJ40CA |
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Виробник: YANGJIE TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 44.4÷49.1V; 77.5A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 77.5A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 5.0SMDJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 44.4÷49.1V; 77.5A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 77.5A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 5.0SMDJ
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В кошику
од. на суму грн.
| 5.0SMDJ43A |
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Виробник: YANGJIE TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 47.8÷52.8V; 72A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 43V
Max. forward impulse current: 72A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Breakdown voltage: 47.8...52.8V
Manufacturer series: 5.0SMDJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 47.8÷52.8V; 72A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 43V
Max. forward impulse current: 72A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Breakdown voltage: 47.8...52.8V
Manufacturer series: 5.0SMDJ
товару немає в наявності
В кошику
од. на суму грн.
| 5.0SMDJ43CA |
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Виробник: YANGJIE TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 47.8÷52.8V; 72A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 72A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 5.0SMDJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 47.8÷52.8V; 72A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 72A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 5.0SMDJ
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| 5.0SMDJ54A |
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Виробник: YANGJIE TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 60÷66.3V; 57.4A; unidirectional; DO214AB,SMC
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Max. forward impulse current: 57.4A
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Manufacturer series: 5.0SMDJ
Peak pulse power dissipation: 5kW
Case: DO214AB; SMC
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 60÷66.3V; 57.4A; unidirectional; DO214AB,SMC
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Max. forward impulse current: 57.4A
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Manufacturer series: 5.0SMDJ
Peak pulse power dissipation: 5kW
Case: DO214AB; SMC
Leakage current: 5µA
товару немає в наявності
В кошику
од. на суму грн.







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