Продукція > YANGJIE TECHNOLOGY > Всі товари виробника YANGJIE TECHNOLOGY (4047) > Сторінка 3 з 68
Фото | Назва | Виробник | Інформація |
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1N5408G | YANGJIE TECHNOLOGY |
![]() Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Mounting: THT Max. forward voltage: 1.1V Load current: 3A Max. forward impulse current: 200A Max. off-state voltage: 1kV Kind of package: tape Case: DO27 Features of semiconductor devices: glass passivated Type of diode: rectifying Semiconductor structure: single diode кількість в упаковці: 1 шт |
на замовлення 3703 шт: термін постачання 14-21 дні (днів) |
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1N5819 | YANGJIE TECHNOLOGY |
![]() Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V; tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.6V Max. forward impulse current: 30A Kind of package: tape |
на замовлення 2187 шт: термін постачання 21-30 дні (днів) |
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1N5819 | YANGJIE TECHNOLOGY |
![]() Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V; tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.6V Max. forward impulse current: 30A Kind of package: tape кількість в упаковці: 1 шт |
на замовлення 2187 шт: термін постачання 14-21 дні (днів) |
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1N5822 | YANGJIE TECHNOLOGY |
![]() Description: Diode: Schottky rectifying; THT; 40V; 3A; DO27; Ufmax: 0.525V; tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO27 Max. forward voltage: 0.525V Max. forward impulse current: 80A Kind of package: tape |
на замовлення 12035 шт: термін постачання 21-30 дні (днів) |
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1N5822 | YANGJIE TECHNOLOGY |
![]() Description: Diode: Schottky rectifying; THT; 40V; 3A; DO27; Ufmax: 0.525V; tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO27 Max. forward voltage: 0.525V Max. forward impulse current: 80A Kind of package: tape кількість в упаковці: 1 шт |
на замовлення 12035 шт: термін постачання 14-21 дні (днів) |
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1N5822 | Yangjie Technology |
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на замовлення 10 шт: термін постачання 3 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
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1SS355Q | Yangjie Technology |
![]() Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2N7002 | YANGJIE TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.272A Pulsed drain current: 1.5A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2N7002 | YANGJIE TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.272A Pulsed drain current: 1.5A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 25 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2N7002A | YANGJIE TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.272A Pulsed drain current: 1.5A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 147 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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2N7002A | YANGJIE TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.272A Pulsed drain current: 1.5A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 25 шт |
на замовлення 147 шт: термін постачання 14-21 дні (днів) |
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2N7002KC | Yangjie Technology |
![]() Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2N7002KCDW | Yangjie Technology |
![]() Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2N7002KCDWQ | Yangjie Technology |
![]() Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2N7002KCE | Yangjie Technology |
![]() Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2N7002KCQ | Yangjie Technology |
![]() Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2N7002KCW | Yangjie Technology |
![]() Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2N7002KCWQ | Yangjie Technology |
![]() Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2N7002KCX | Yangjie Technology |
![]() Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2N7002W | YANGJIE TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.272A Pulsed drain current: 1A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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2N7002W | YANGJIE TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.272A Pulsed drain current: 1A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 25 шт |
на замовлення 6000 шт: термін постачання 14-21 дні (днів) |
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2SA1037-Q | YANGJIE TECHNOLOGY |
![]() Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23 Frequency: 140MHz Type of transistor: PNP Mounting: SMD Collector current: 0.15A Power dissipation: 0.2W Collector-emitter voltage: 50V Current gain: 120...270 Kind of package: reel; tape Application: automotive industry Polarisation: bipolar Case: SOT23 |
на замовлення 1275 шт: термін постачання 21-30 дні (днів) |
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2SA1037-R | YANGJIE TECHNOLOGY |
![]() Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23 Frequency: 140MHz Type of transistor: PNP Mounting: SMD Collector current: 0.15A Power dissipation: 0.2W Collector-emitter voltage: 50V Current gain: 180...390 Kind of package: reel; tape Polarisation: bipolar Case: SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SA1037-S | YANGJIE TECHNOLOGY |
![]() Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23 Frequency: 140MHz Type of transistor: PNP Mounting: SMD Collector current: 0.15A Power dissipation: 0.2W Collector-emitter voltage: 50V Current gain: 270...560 Kind of package: reel; tape Polarisation: bipolar Case: SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SA1037-Q | Yangjie Technology | Description: Transistors - Bipolar (BJT) - Si |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SA1037-Q | YANGJIE TECHNOLOGY |
![]() Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23 Frequency: 140MHz Type of transistor: PNP Mounting: SMD Collector current: 0.15A Power dissipation: 0.2W Collector-emitter voltage: 50V Current gain: 120...270 Kind of package: reel; tape Application: automotive industry Polarisation: bipolar Case: SOT23 кількість в упаковці: 25 шт |
на замовлення 1275 шт: термін постачання 14-21 дні (днів) |
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2SA1037-R | YANGJIE TECHNOLOGY |
![]() Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23 Frequency: 140MHz Type of transistor: PNP Mounting: SMD Collector current: 0.15A Power dissipation: 0.2W Collector-emitter voltage: 50V Current gain: 180...390 Kind of package: reel; tape Polarisation: bipolar Case: SOT23 кількість в упаковці: 25 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SA1037-S | Yangjie Technology | Description: Transistors - Bipolar (BJT) - Si |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SA1037-S | YANGJIE TECHNOLOGY |
![]() Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23 Frequency: 140MHz Type of transistor: PNP Mounting: SMD Collector current: 0.15A Power dissipation: 0.2W Collector-emitter voltage: 50V Current gain: 270...560 Kind of package: reel; tape Polarisation: bipolar Case: SOT23 кількість в упаковці: 25 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SA1576A-Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SA1576A-R | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SA1576A-S | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SA812-M4 | YANGJIE TECHNOLOGY |
![]() Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 90...180 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SA812-M5 | YANGJIE TECHNOLOGY |
![]() Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 135...270 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SA812-M6 | YANGJIE TECHNOLOGY |
![]() Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 200...400 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
на замовлення 5550 шт: термін постачання 21-30 дні (днів) |
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2SA812-M7 | YANGJIE TECHNOLOGY |
![]() Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 300...600 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SA812-M4 | YANGJIE TECHNOLOGY |
![]() Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 90...180 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz кількість в упаковці: 25 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SA812-M5 | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V Frequency - Transition: 180MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SA812-M5 | YANGJIE TECHNOLOGY |
![]() Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 135...270 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz кількість в упаковці: 25 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SA812-M6 | Yangjie Technology |
Description: SOT-23 PNP 0.2W -0.1A -60V Trans Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V Frequency - Transition: 180MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SA812-M6 | YANGJIE TECHNOLOGY |
![]() Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 200...400 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz кількість в упаковці: 25 шт |
на замовлення 5550 шт: термін постачання 14-21 дні (днів) |
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2SA812-M7 | YANGJIE TECHNOLOGY |
![]() Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 300...600 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz кількість в упаковці: 3000 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SB1188-Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V Frequency - Transition: 80MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 500 mW |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
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2SB1188-R | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V Frequency - Transition: 80MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 500 mW |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
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2SB1197-Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Frequency - Transition: 50MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 200 mW |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SB1198-R | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SB1198-R | YANGJIE TECHNOLOGY | 2SB1198-R-YAN PNP SMD transistors |
на замовлення 2835 шт: термін постачання 14-21 дні (днів) |
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2SB1198-RQ | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SC1623-L6 | Yangjie Technology |
Description: SOT-23 NPN 0.2W 0.1A 60V Transis Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V Frequency - Transition: 250MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SC2383P-O | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V Frequency - Transition: 20MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 500 mW |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
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2SC2383P-Y | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V Frequency - Transition: 20MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 500 mW |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
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2SC2412-Q | YANGJIE TECHNOLOGY |
![]() Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SOT23 Current gain: 120...270 Mounting: SMD Kind of package: reel; tape Frequency: 160MHz Application: automotive industry |
на замовлення 5850 шт: термін постачання 21-30 дні (днів) |
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2SC2412-R | YANGJIE TECHNOLOGY |
![]() Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SOT23 Current gain: 180...390 Mounting: SMD Kind of package: reel; tape Frequency: 160MHz |
на замовлення 5825 шт: термін постачання 21-30 дні (днів) |
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2SC2412-S | YANGJIE TECHNOLOGY |
![]() Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SOT23 Current gain: 270...560 Mounting: SMD Kind of package: reel; tape Frequency: 160MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC2412-Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 150MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SC2412-Q | YANGJIE TECHNOLOGY |
![]() Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SOT23 Current gain: 120...270 Mounting: SMD Kind of package: reel; tape Frequency: 160MHz Application: automotive industry кількість в упаковці: 25 шт |
на замовлення 5850 шт: термін постачання 14-21 дні (днів) |
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2SC2412-R | Yangjie Technology |
Description: SOT-23 NPN 0.2W 0.15A 60V Transi Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 150MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SC2412-R | YANGJIE TECHNOLOGY |
![]() Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SOT23 Current gain: 180...390 Mounting: SMD Kind of package: reel; tape Frequency: 160MHz кількість в упаковці: 25 шт |
на замовлення 5825 шт: термін постачання 14-21 дні (днів) |
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2SC2412-S | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V Frequency - Transition: 150MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SC2412-S | YANGJIE TECHNOLOGY |
![]() Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SOT23 Current gain: 270...560 Mounting: SMD Kind of package: reel; tape Frequency: 160MHz кількість в упаковці: 25 шт |
товару немає в наявності |
В кошику од. на суму грн. |
1N5408G |
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Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Mounting: THT
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: tape
Case: DO27
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Mounting: THT
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: tape
Case: DO27
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
кількість в упаковці: 1 шт
на замовлення 3703 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
5+ | 68.20 грн |
6+ | 50.06 грн |
17+ | 17.67 грн |
25+ | 14.46 грн |
100+ | 11.25 грн |
204+ | 5.48 грн |
558+ | 5.20 грн |
1N5819 |
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Виробник: YANGJIE TECHNOLOGY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V; tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.6V
Max. forward impulse current: 30A
Kind of package: tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V; tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.6V
Max. forward impulse current: 30A
Kind of package: tape
на замовлення 2187 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
42+ | 10.18 грн |
81+ | 4.88 грн |
146+ | 2.70 грн |
500+ | 2.02 грн |
662+ | 1.39 грн |
1819+ | 1.32 грн |
1N5819 |
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Виробник: YANGJIE TECHNOLOGY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V; tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.6V
Max. forward impulse current: 30A
Kind of package: tape
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V; tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.6V
Max. forward impulse current: 30A
Kind of package: tape
кількість в упаковці: 1 шт
на замовлення 2187 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
25+ | 12.21 грн |
49+ | 6.09 грн |
100+ | 3.24 грн |
500+ | 2.43 грн |
662+ | 1.67 грн |
1819+ | 1.59 грн |
15000+ | 1.58 грн |
1N5822 |
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Виробник: YANGJIE TECHNOLOGY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO27; Ufmax: 0.525V; tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO27
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO27; Ufmax: 0.525V; tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO27
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: tape
на замовлення 12035 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.45 грн |
33+ | 12.13 грн |
100+ | 8.53 грн |
241+ | 3.85 грн |
661+ | 3.64 грн |
1N5822 |
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Виробник: YANGJIE TECHNOLOGY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO27; Ufmax: 0.525V; tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO27
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: tape
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO27; Ufmax: 0.525V; tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO27
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: tape
кількість в упаковці: 1 шт
на замовлення 12035 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
10+ | 30.54 грн |
20+ | 15.12 грн |
100+ | 10.24 грн |
241+ | 4.62 грн |
661+ | 4.37 грн |
1N5822 |
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Виробник: Yangjie Technology
Діод Шотткі вивідний; Io, A = 3; Uзвор, В = 40; If, А = 3; Тексп, °C = -55...+125; DO-27
Діод Шотткі вивідний; Io, A = 3; Uзвор, В = 40; If, А = 3; Тексп, °C = -55...+125; DO-27
на замовлення 10 шт:
термін постачання 3 дні (днів)В кошику од. на суму грн.
1SS355Q |
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Виробник: Yangjie Technology
Description: SOD-323 80V 0.15A Diodes Recti
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOD-323 80V 0.15A Diodes Recti
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.31 грн |
15000+ | 1.18 грн |
30000+ | 1.10 грн |
60000+ | 0.96 грн |
120000+ | 0.89 грн |
300000+ | 0.81 грн |
2N7002 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
2N7002 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 25 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 25 шт
товару немає в наявності
В кошику
од. на суму грн.
2N7002A |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 147 шт:
термін постачання 21-30 дні (днів)В кошику од. на суму грн.
2N7002A |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 25 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 25 шт
на замовлення 147 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
125+ | 2.65 грн |
150+ | 1.96 грн |
500+ | 1.01 грн |
1275+ | 0.88 грн |
3450+ | 0.83 грн |
15000+ | 0.80 грн |
2N7002KC |
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Виробник: Yangjie Technology
Description: SOT-23 N 60V 0.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 N 60V 0.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.31 грн |
15000+ | 1.18 грн |
30000+ | 1.10 грн |
60000+ | 0.96 грн |
120000+ | 0.89 грн |
300000+ | 0.81 грн |
2N7002KCDW |
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Виробник: Yangjie Technology
Description: SOT-363 N 60V 0.3A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-363 N 60V 0.3A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.21 грн |
15000+ | 1.97 грн |
30000+ | 1.89 грн |
60000+ | 1.63 грн |
120000+ | 1.48 грн |
300000+ | 1.33 грн |
2N7002KCDWQ |
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Виробник: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 3.44 грн |
15000+ | 3.15 грн |
30000+ | 2.99 грн |
60000+ | 2.59 грн |
120000+ | 2.37 грн |
300000+ | 2.14 грн |
2N7002KCE |
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Виробник: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.64 грн |
15000+ | 1.50 грн |
30000+ | 1.34 грн |
60000+ | 1.18 грн |
120000+ | 1.11 грн |
300000+ | 1.03 грн |
2N7002KCQ |
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Виробник: Yangjie Technology
Description: SOT-23 N 60V 0.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 N 60V 0.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.70 грн |
15000+ | 2.44 грн |
30000+ | 2.28 грн |
60000+ | 2.00 грн |
120000+ | 1.85 грн |
300000+ | 1.70 грн |
2N7002KCW |
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Виробник: Yangjie Technology
Description: SOT-323 N 60V 0.3A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-323 N 60V 0.3A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.55 грн |
15000+ | 1.42 грн |
30000+ | 1.34 грн |
60000+ | 1.18 грн |
120000+ | 1.03 грн |
300000+ | 0.96 грн |
2N7002KCWQ |
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Виробник: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 3.03 грн |
15000+ | 2.76 грн |
30000+ | 2.60 грн |
60000+ | 2.29 грн |
120000+ | 2.00 грн |
300000+ | 1.85 грн |
2N7002KCX |
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Виробник: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.54 грн |
15000+ | 2.28 грн |
30000+ | 2.13 грн |
60000+ | 1.92 грн |
120000+ | 1.70 грн |
300000+ | 1.55 грн |
2N7002W |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
200+ | 2.41 грн |
425+ | 0.95 грн |
500+ | 0.85 грн |
1250+ | 0.75 грн |
3425+ | 0.71 грн |
2N7002W |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 25 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 25 шт
на замовлення 6000 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
125+ | 2.89 грн |
250+ | 1.19 грн |
500+ | 1.02 грн |
1250+ | 0.90 грн |
3425+ | 0.85 грн |
15000+ | 0.82 грн |
2SA1037-Q |
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Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Frequency: 140MHz
Type of transistor: PNP
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 120...270
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Case: SOT23
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Frequency: 140MHz
Type of transistor: PNP
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 120...270
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Case: SOT23
на замовлення 1275 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
175+ | 2.68 грн |
325+ | 1.24 грн |
500+ | 1.11 грн |
1100+ | 0.85 грн |
2SA1037-R |
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Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Frequency: 140MHz
Type of transistor: PNP
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 180...390
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT23
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Frequency: 140MHz
Type of transistor: PNP
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 180...390
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT23
товару немає в наявності
В кошику
од. на суму грн.
2SA1037-S |
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Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Frequency: 140MHz
Type of transistor: PNP
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 270...560
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT23
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Frequency: 140MHz
Type of transistor: PNP
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 270...560
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT23
товару немає в наявності
В кошику
од. на суму грн.
2SA1037-Q |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Description: Transistors - Bipolar (BJT) - Si
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.20 грн |
15000+ | 1.08 грн |
30000+ | 1.01 грн |
60000+ | 0.88 грн |
120000+ | 0.81 грн |
300000+ | 0.74 грн |
2SA1037-Q |
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Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Frequency: 140MHz
Type of transistor: PNP
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 120...270
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Case: SOT23
кількість в упаковці: 25 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Frequency: 140MHz
Type of transistor: PNP
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 120...270
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Case: SOT23
кількість в упаковці: 25 шт
на замовлення 1275 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
100+ | 3.22 грн |
200+ | 1.54 грн |
500+ | 1.33 грн |
1100+ | 1.02 грн |
3000+ | 0.96 грн |
2SA1037-R |
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Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Frequency: 140MHz
Type of transistor: PNP
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 180...390
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT23
кількість в упаковці: 25 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Frequency: 140MHz
Type of transistor: PNP
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 180...390
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT23
кількість в упаковці: 25 шт
товару немає в наявності
В кошику
од. на суму грн.
2SA1037-S |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Description: Transistors - Bipolar (BJT) - Si
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.12 грн |
15000+ | 1.01 грн |
30000+ | 0.94 грн |
60000+ | 0.81 грн |
120000+ | 0.74 грн |
300000+ | 0.68 грн |
2SA1037-S |
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Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Frequency: 140MHz
Type of transistor: PNP
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 270...560
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT23
кількість в упаковці: 25 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Frequency: 140MHz
Type of transistor: PNP
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 270...560
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT23
кількість в упаковці: 25 шт
товару немає в наявності
В кошику
од. на суму грн.
2SA1576A-Q |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.55 грн |
15000+ | 1.42 грн |
30000+ | 1.34 грн |
60000+ | 1.11 грн |
120000+ | 1.03 грн |
300000+ | 0.96 грн |
2SA1576A-R |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.39 грн |
15000+ | 1.26 грн |
30000+ | 1.18 грн |
60000+ | 1.03 грн |
120000+ | 0.96 грн |
300000+ | 0.89 грн |
2SA1576A-S |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.39 грн |
15000+ | 1.26 грн |
30000+ | 1.18 грн |
60000+ | 1.03 грн |
120000+ | 0.96 грн |
300000+ | 0.89 грн |
2SA812-M4 |
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Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 90...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 90...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
товару немає в наявності
В кошику
од. на суму грн.
2SA812-M5 |
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Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 135...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 135...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
товару немає в наявності
В кошику
од. на суму грн.
2SA812-M6 |
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Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
на замовлення 5550 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
200+ | 2.21 грн |
425+ | 0.94 грн |
500+ | 0.84 грн |
1250+ | 0.75 грн |
3400+ | 0.71 грн |
2SA812-M7 |
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Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 300...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 300...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
товару немає в наявності
В кошику
од. на суму грн.
2SA812-M4 |
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Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 90...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
кількість в упаковці: 25 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 90...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
кількість в упаковці: 25 шт
товару немає в наявності
В кошику
од. на суму грн.
2SA812-M5 |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.06 грн |
15000+ | 0.95 грн |
30000+ | 0.87 грн |
60000+ | 0.74 грн |
120000+ | 0.67 грн |
300000+ | 0.59 грн |
2SA812-M5 |
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Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 135...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
кількість в упаковці: 25 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 135...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
кількість в упаковці: 25 шт
товару немає в наявності
В кошику
од. на суму грн.
2SA812-M6 |
Виробник: Yangjie Technology
Description: SOT-23 PNP 0.2W -0.1A -60V Trans
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: SOT-23 PNP 0.2W -0.1A -60V Trans
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.06 грн |
15000+ | 0.95 грн |
30000+ | 0.87 грн |
60000+ | 0.74 грн |
120000+ | 0.67 грн |
300000+ | 0.59 грн |
2SA812-M6 |
![]() |
Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
кількість в упаковці: 25 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
кількість в упаковці: 25 шт
на замовлення 5550 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
125+ | 2.65 грн |
275+ | 1.17 грн |
500+ | 1.01 грн |
1250+ | 0.90 грн |
3400+ | 0.85 грн |
15000+ | 0.81 грн |
2SA812-M7 |
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Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 300...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
кількість в упаковці: 3000 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 300...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
кількість в упаковці: 3000 шт
товару немає в наявності
В кошику
од. на суму грн.
2SB1188-Q |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 500 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 500 mW
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 3.27 грн |
5000+ | 2.99 грн |
10000+ | 2.84 грн |
20000+ | 2.44 грн |
40000+ | 2.22 грн |
100000+ | 2.07 грн |
2SB1188-R |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 500 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 500 mW
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 2.94 грн |
5000+ | 2.68 грн |
10000+ | 2.52 грн |
20000+ | 2.22 грн |
40000+ | 2.00 грн |
100000+ | 1.85 грн |
2SB1197-Q |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.68 грн |
15000+ | 2.43 грн |
30000+ | 2.28 грн |
60000+ | 2.01 грн |
120000+ | 1.80 грн |
300000+ | 1.66 грн |
2SB1198-R |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 3.68 грн |
15000+ | 3.39 грн |
30000+ | 3.15 грн |
60000+ | 2.81 грн |
120000+ | 2.51 грн |
300000+ | 2.37 грн |
2SB1198-R |
Виробник: YANGJIE TECHNOLOGY
2SB1198-R-YAN PNP SMD transistors
2SB1198-R-YAN PNP SMD transistors
на замовлення 2835 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
32+ | 9.71 грн |
725+ | 1.53 грн |
1985+ | 1.45 грн |
2SB1198-RQ |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 4.42 грн |
15000+ | 4.02 грн |
30000+ | 3.78 грн |
60000+ | 3.33 грн |
120000+ | 3.03 грн |
300000+ | 2.81 грн |
2SC1623-L6 |
Виробник: Yangjie Technology
Description: SOT-23 NPN 0.2W 0.1A 60V Transis
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: SOT-23 NPN 0.2W 0.1A 60V Transis
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.06 грн |
15000+ | 0.95 грн |
30000+ | 0.87 грн |
60000+ | 0.74 грн |
120000+ | 0.67 грн |
300000+ | 0.59 грн |
2SC2383P-O |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 6.71 грн |
5000+ | 6.06 грн |
10000+ | 5.67 грн |
20000+ | 5.03 грн |
40000+ | 4.51 грн |
100000+ | 4.21 грн |
2SC2383P-Y |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 6.71 грн |
5000+ | 6.06 грн |
10000+ | 5.67 грн |
20000+ | 5.03 грн |
40000+ | 4.51 грн |
100000+ | 4.21 грн |
2SC2412-Q |
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Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Application: automotive industry
на замовлення 5850 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
175+ | 2.71 грн |
325+ | 1.25 грн |
500+ | 1.13 грн |
1075+ | 0.87 грн |
2950+ | 0.82 грн |
2SC2412-R |
![]() |
Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
на замовлення 5825 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
175+ | 2.75 грн |
350+ | 1.17 грн |
500+ | 1.05 грн |
1025+ | 0.91 грн |
2825+ | 0.86 грн |
2SC2412-S |
![]() |
Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
товару немає в наявності
В кошику
од. на суму грн.
2SC2412-Q |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.31 грн |
15000+ | 1.18 грн |
30000+ | 1.10 грн |
60000+ | 0.96 грн |
120000+ | 0.89 грн |
300000+ | 0.81 грн |
2SC2412-Q |
![]() |
Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Application: automotive industry
кількість в упаковці: 25 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Application: automotive industry
кількість в упаковці: 25 шт
на замовлення 5850 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
100+ | 3.26 грн |
200+ | 1.56 грн |
500+ | 1.35 грн |
1075+ | 1.04 грн |
2950+ | 0.98 грн |
2SC2412-R |
Виробник: Yangjie Technology
Description: SOT-23 NPN 0.2W 0.15A 60V Transi
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: SOT-23 NPN 0.2W 0.15A 60V Transi
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.39 грн |
15000+ | 1.26 грн |
30000+ | 1.18 грн |
60000+ | 1.03 грн |
120000+ | 0.96 грн |
300000+ | 0.89 грн |
2SC2412-R |
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Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
кількість в упаковці: 25 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
кількість в упаковці: 25 шт
на замовлення 5825 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
100+ | 3.30 грн |
225+ | 1.45 грн |
500+ | 1.26 грн |
1025+ | 1.09 грн |
2825+ | 1.03 грн |
15000+ | 1.00 грн |
2SC2412-S |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.23 грн |
15000+ | 1.10 грн |
30000+ | 1.02 грн |
60000+ | 0.89 грн |
120000+ | 0.81 грн |
300000+ | 0.74 грн |
2SC2412-S |
![]() |
Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
кількість в упаковці: 25 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
кількість в упаковці: 25 шт
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