Продукція > YANGJIE TECHNOLOGY > Всі товари виробника YANGJIE TECHNOLOGY (3300) > Сторінка 3 з 55
| Фото | Назва | Виробник | Інформація |
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| 1N4148W | YANGJIE TECHNOLOGY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD123; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SOD123 Max. forward voltage: 1.25V Max. forward impulse current: 2A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1N4148WQ | Yangjie Technology |
Description: SOD-123 75V 0.15A Diodes RectiPackaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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1N4148WSL | Yangjie Technology |
Description: Diodes - Rectifiers - Single SODPackaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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1N4148WSQ | Yangjie Technology |
Description: SOD-323 75V 0.15A Diodes RectiPackaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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1N4148WTQ | Yangjie Technology |
Description: Diodes - Rectifiers - Single SOD Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 800000 шт: термін постачання 21-31 дні (днів) |
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1N4448WQ | Yangjie Technology |
Description: Diodes - Rectifiers - Single SODPackaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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1N4448WS | YANGJIE TECHNOLOGY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.5A; 4ns; SOD323; Ufmax: 1V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.5A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD323 Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape |
на замовлення 525 шт: термін постачання 21-30 дні (днів) |
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1N4448WS | YANGJIE TECHNOLOGY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.5A; 4ns; SOD323; Ufmax: 1V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.5A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD323 Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 525 шт: термін постачання 7-14 дні (днів) |
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1N4448WSQ | Yangjie Technology |
Description: Diodes - Rectifiers - Single SODPackaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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1N5400 | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 50V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 150A Case: DO27 Max. forward voltage: 1V |
на замовлення 109 шт: термін постачання 21-30 дні (днів) |
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1N5400 | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 50V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 150A Case: DO27 Max. forward voltage: 1V кількість в упаковці: 1 шт |
на замовлення 109 шт: термін постачання 7-14 дні (днів) |
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1N5400G | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 50V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N5401 | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 150A Case: DO27 Max. forward voltage: 1V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N5401G | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N5402 | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 150A Case: DO27 Max. forward voltage: 1V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N5402G | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
на замовлення 2375 шт: термін постачання 21-30 дні (днів) |
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1N5402G | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
на замовлення 2375 шт: термін постачання 7-14 дні (днів) |
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1N5404 | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V Max. forward voltage: 1V Load current: 3A Max. forward impulse current: 150A Max. off-state voltage: 0.4kV Case: DO27 Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Kind of package: tape |
на замовлення 1119 шт: термін постачання 21-30 дні (днів) |
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1N5404 | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V Max. forward voltage: 1V Load current: 3A Max. forward impulse current: 150A Max. off-state voltage: 0.4kV Case: DO27 Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Kind of package: tape кількість в упаковці: 1 шт |
на замовлення 1119 шт: термін постачання 7-14 дні (днів) |
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1N5404G | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Max. forward voltage: 1.1V Load current: 3A Max. forward impulse current: 200A Max. off-state voltage: 0.4kV Case: DO27 Features of semiconductor devices: glass passivated Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Kind of package: tape |
на замовлення 3667 шт: термін постачання 21-30 дні (днів) |
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1N5404G | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Max. forward voltage: 1.1V Load current: 3A Max. forward impulse current: 200A Max. off-state voltage: 0.4kV Case: DO27 Features of semiconductor devices: glass passivated Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Kind of package: tape кількість в упаковці: 1 шт |
на замовлення 3667 шт: термін постачання 7-14 дні (днів) |
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1N5406 | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 150A Case: DO27 Max. forward voltage: 1V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N5406G | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N5407 | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 150A Case: DO27 Max. forward voltage: 1V |
на замовлення 941 шт: термін постачання 21-30 дні (днів) |
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1N5407 | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 150A Case: DO27 Max. forward voltage: 1V кількість в упаковці: 1 шт |
на замовлення 941 шт: термін постачання 7-14 дні (днів) |
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1N5407G | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N5408 | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V Mounting: THT Max. forward voltage: 1V Load current: 3A Max. forward impulse current: 150A Max. off-state voltage: 1kV Kind of package: tape Case: DO27 Type of diode: rectifying Semiconductor structure: single diode |
на замовлення 1124 шт: термін постачання 21-30 дні (днів) |
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1N5408 | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V Mounting: THT Max. forward voltage: 1V Load current: 3A Max. forward impulse current: 150A Max. off-state voltage: 1kV Kind of package: tape Case: DO27 Type of diode: rectifying Semiconductor structure: single diode кількість в упаковці: 1 шт |
на замовлення 1124 шт: термін постачання 7-14 дні (днів) |
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1N5408G | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Mounting: THT Max. forward voltage: 1.1V Load current: 3A Max. forward impulse current: 200A Max. off-state voltage: 1kV Kind of package: tape Case: DO27 Features of semiconductor devices: glass passivated Type of diode: rectifying Semiconductor structure: single diode |
на замовлення 3329 шт: термін постачання 21-30 дні (днів) |
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1N5408G | YANGJIE TECHNOLOGY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Mounting: THT Max. forward voltage: 1.1V Load current: 3A Max. forward impulse current: 200A Max. off-state voltage: 1kV Kind of package: tape Case: DO27 Features of semiconductor devices: glass passivated Type of diode: rectifying Semiconductor structure: single diode кількість в упаковці: 1 шт |
на замовлення 3329 шт: термін постачання 7-14 дні (днів) |
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1N5819 | YANGJIE TECHNOLOGY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V; tape Case: DO41 Mounting: THT Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.6V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 40V Kind of package: tape |
на замовлення 520 шт: термін постачання 21-30 дні (днів) |
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1N5819 | YANGJIE TECHNOLOGY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V; tape Case: DO41 Mounting: THT Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.6V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 40V Kind of package: tape кількість в упаковці: 1 шт |
на замовлення 520 шт: термін постачання 7-14 дні (днів) |
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1N5822 | YANGJIE TECHNOLOGY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 3A; DO27; Ufmax: 0.525V; tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO27 Max. forward voltage: 0.525V Max. forward impulse current: 80A Kind of package: tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N5822 | YANGJIE TECHNOLOGY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 3A; DO27; Ufmax: 0.525V; tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO27 Max. forward voltage: 0.525V Max. forward impulse current: 80A Kind of package: tape кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| 1N5822 | Yangjie Technology |
Діод Шотткі вивідний; Io, A = 3; Uзвор, В = 40; If, А = 3; Тексп, °C = -55...+125; DO-27 |
на замовлення 10 шт: термін постачання 3 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||||||
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1SS355Q | Yangjie Technology |
Description: SOD-323 80V 0.15A Diodes RectiPackaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2N7002 | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.272A Pulsed drain current: 1.5A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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2N7002 | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.272A Pulsed drain current: 1.5A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 25 шт |
на замовлення 6000 шт: термін постачання 7-14 дні (днів) |
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2N7002A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.272A Pulsed drain current: 1.5A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3125 шт: термін постачання 21-30 дні (днів) |
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2N7002K | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.272A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement Technology: TRENCH POWER MV Pulsed drain current: 1.5A Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2N7002KC | Yangjie Technology |
Description: SOT-23 N 60V 0.3A Transistors FPackaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2N7002KCDW | Yangjie Technology |
Description: SOT-363 N 60V 0.3A TransistorsPackaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2N7002KCDWQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - SiPackaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2N7002KCE | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - SiPackaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2N7002KCQ | Yangjie Technology |
Description: SOT-23 N 60V 0.3A Transistors FPackaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2N7002KCW | Yangjie Technology |
Description: SOT-323 N 60V 0.3A TransistorsPackaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2N7002KCWQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - SiPackaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2N7002KCX | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - SiPackaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2N7002W | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.272A Pulsed drain current: 1A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2100 шт: термін постачання 21-30 дні (днів) |
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2N7002W | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.272A Pulsed drain current: 1A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 25 шт |
на замовлення 2100 шт: термін постачання 7-14 дні (днів) |
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2SA1037-Q | YANGJIE TECHNOLOGY |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SOT23 Current gain: 120...270 Mounting: SMD Kind of package: reel; tape Frequency: 140MHz Application: automotive industry |
на замовлення 1150 шт: термін постачання 21-30 дні (днів) |
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2SA1037-R | YANGJIE TECHNOLOGY |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SOT23 Current gain: 180...390 Mounting: SMD Kind of package: reel; tape Frequency: 140MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SA1037-S | YANGJIE TECHNOLOGY |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SOT23 Current gain: 270...560 Mounting: SMD Kind of package: reel; tape Frequency: 140MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SA1037-Q | Yangjie Technology | Description: Transistors - Bipolar (BJT) - Si |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SA1037-Q | YANGJIE TECHNOLOGY |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SOT23 Current gain: 120...270 Mounting: SMD Kind of package: reel; tape Frequency: 140MHz Application: automotive industry кількість в упаковці: 25 шт |
на замовлення 1150 шт: термін постачання 7-14 дні (днів) |
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2SA1037-S | Yangjie Technology | Description: Transistors - Bipolar (BJT) - Si |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SA1576A-Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SA1576A-R | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SA1576A-S | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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2SA812-M5 | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V Frequency - Transition: 180MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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| 1N4148W |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| 1N4148WQ |
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Виробник: Yangjie Technology
Description: SOD-123 75V 0.15A Diodes Recti
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOD-123 75V 0.15A Diodes Recti
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.40 грн |
| 15000+ | 1.27 грн |
| 30000+ | 1.19 грн |
| 60000+ | 1.05 грн |
| 120000+ | 0.91 грн |
| 300000+ | 0.84 грн |
| 1N4148WSL |
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Виробник: Yangjie Technology
Description: Diodes - Rectifiers - Single SOD
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Diodes - Rectifiers - Single SOD
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.32 грн |
| 15000+ | 1.19 грн |
| 30000+ | 1.12 грн |
| 60000+ | 0.98 грн |
| 120000+ | 0.91 грн |
| 300000+ | 0.84 грн |
| 1N4148WSQ |
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Виробник: Yangjie Technology
Description: SOD-323 75V 0.15A Diodes Recti
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOD-323 75V 0.15A Diodes Recti
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.25 грн |
| 15000+ | 2.02 грн |
| 30000+ | 1.87 грн |
| 60000+ | 1.68 грн |
| 120000+ | 1.54 грн |
| 300000+ | 1.40 грн |
| 1N4148WTQ |
Виробник: Yangjie Technology
Description: Diodes - Rectifiers - Single SOD
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Diodes - Rectifiers - Single SOD
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 800000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 1.47 грн |
| 40000+ | 1.34 грн |
| 80000+ | 1.27 грн |
| 160000+ | 1.12 грн |
| 320000+ | 0.98 грн |
| 800000+ | 0.91 грн |
| 1N4448WQ |
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Виробник: Yangjie Technology
Description: Diodes - Rectifiers - Single SOD
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Diodes - Rectifiers - Single SOD
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.47 грн |
| 15000+ | 1.34 грн |
| 30000+ | 1.27 грн |
| 60000+ | 1.12 грн |
| 120000+ | 0.98 грн |
| 300000+ | 0.91 грн |
| 1N4448WS |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.5A; 4ns; SOD323; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.5A; 4ns; SOD323; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
на замовлення 525 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 125+ | 3.57 грн |
| 250+ | 1.66 грн |
| 443+ | 0.94 грн |
| 525+ | 0.83 грн |
| 1N4448WS |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.5A; 4ns; SOD323; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.5A; 4ns; SOD323; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 525 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 75+ | 4.29 грн |
| 150+ | 2.07 грн |
| 266+ | 1.12 грн |
| 500+ | 0.85 грн |
| 1000+ | 0.77 грн |
| 3000+ | 0.71 грн |
| 9000+ | 0.68 грн |
| 1N4448WSQ |
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Виробник: Yangjie Technology
Description: Diodes - Rectifiers - Single SOD
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Diodes - Rectifiers - Single SOD
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.40 грн |
| 15000+ | 1.27 грн |
| 30000+ | 1.19 грн |
| 60000+ | 1.05 грн |
| 120000+ | 0.91 грн |
| 300000+ | 0.84 грн |
| 1N5400 |
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Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1V
на замовлення 109 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 109+ | 4.47 грн |
| 1N5400 |
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Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1V
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1V
кількість в упаковці: 1 шт
на замовлення 109 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 3.22 грн |
| 1N5400G |
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Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| 1N5401 |
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Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1V
товару немає в наявності
В кошику
од. на суму грн.
| 1N5401G |
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Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| 1N5402 |
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Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1V
товару немає в наявності
В кошику
од. на суму грн.
| 1N5402G |
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Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
на замовлення 2375 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 65.20 грн |
| 10+ | 45.86 грн |
| 25+ | 16.75 грн |
| 31+ | 13.77 грн |
| 100+ | 10.70 грн |
| 250+ | 8.54 грн |
| 500+ | 7.63 грн |
| 1250+ | 6.39 грн |
| 1N5402G |
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Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
на замовлення 2375 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 78.24 грн |
| 6+ | 57.15 грн |
| 15+ | 20.10 грн |
| 25+ | 16.52 грн |
| 100+ | 12.84 грн |
| 250+ | 10.25 грн |
| 500+ | 9.16 грн |
| 1N5404 |
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Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
на замовлення 1119 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.59 грн |
| 12+ | 37.07 грн |
| 31+ | 13.60 грн |
| 38+ | 11.11 грн |
| 100+ | 8.62 грн |
| 250+ | 6.88 грн |
| 500+ | 6.22 грн |
| 1N5404 |
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Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
кількість в упаковці: 1 шт
на замовлення 1119 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 64.30 грн |
| 7+ | 46.20 грн |
| 19+ | 16.32 грн |
| 25+ | 13.34 грн |
| 100+ | 10.35 грн |
| 250+ | 8.26 грн |
| 500+ | 7.46 грн |
| 1N5404G |
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Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 0.4kV
Case: DO27
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 0.4kV
Case: DO27
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
на замовлення 3667 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.59 грн |
| 12+ | 37.57 грн |
| 30+ | 13.85 грн |
| 37+ | 11.28 грн |
| 100+ | 8.79 грн |
| 250+ | 7.05 грн |
| 500+ | 6.30 грн |
| 1250+ | 5.22 грн |
| 2500+ | 4.73 грн |
| 1N5404G |
![]() |
Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 0.4kV
Case: DO27
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 0.4kV
Case: DO27
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
кількість в упаковці: 1 шт
на замовлення 3667 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 64.30 грн |
| 7+ | 46.82 грн |
| 18+ | 16.62 грн |
| 25+ | 13.53 грн |
| 100+ | 10.55 грн |
| 250+ | 8.46 грн |
| 500+ | 7.56 грн |
| 1N5406 |
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Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1V
товару немає в наявності
В кошику
од. на суму грн.
| 1N5406G |
![]() |
Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| 1N5407 |
![]() |
Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1V
на замовлення 941 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 44.66 грн |
| 14+ | 31.26 грн |
| 37+ | 11.44 грн |
| 45+ | 9.37 грн |
| 100+ | 7.30 грн |
| 250+ | 5.81 грн |
| 500+ | 5.22 грн |
| 1N5407 |
![]() |
Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1V
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1V
кількість в упаковці: 1 шт
на замовлення 941 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 53.59 грн |
| 8+ | 38.96 грн |
| 22+ | 13.73 грн |
| 27+ | 11.25 грн |
| 100+ | 8.76 грн |
| 250+ | 6.97 грн |
| 500+ | 6.27 грн |
| 1N5407G |
![]() |
Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| 1N5408 |
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Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Mounting: THT
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 150A
Max. off-state voltage: 1kV
Kind of package: tape
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Mounting: THT
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 150A
Max. off-state voltage: 1kV
Kind of package: tape
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
на замовлення 1124 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 48.23 грн |
| 13+ | 33.17 грн |
| 35+ | 12.19 грн |
| 42+ | 9.95 грн |
| 100+ | 7.71 грн |
| 250+ | 6.22 грн |
| 500+ | 5.56 грн |
| 1N5408 |
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Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Mounting: THT
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 150A
Max. off-state voltage: 1kV
Kind of package: tape
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 150A; DO27; Ufmax: 1V
Mounting: THT
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 150A
Max. off-state voltage: 1kV
Kind of package: tape
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
кількість в упаковці: 1 шт
на замовлення 1124 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.87 грн |
| 8+ | 41.34 грн |
| 21+ | 14.63 грн |
| 25+ | 11.94 грн |
| 100+ | 9.26 грн |
| 250+ | 7.46 грн |
| 500+ | 6.67 грн |
| 1N5408G |
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Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Mounting: THT
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: tape
Case: DO27
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Mounting: THT
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: tape
Case: DO27
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
на замовлення 3329 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 55.37 грн |
| 11+ | 38.73 грн |
| 30+ | 14.18 грн |
| 36+ | 11.61 грн |
| 100+ | 9.04 грн |
| 250+ | 7.22 грн |
| 500+ | 6.47 грн |
| 1250+ | 5.39 грн |
| 2500+ | 4.89 грн |
| 1N5408G |
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Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Mounting: THT
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: tape
Case: DO27
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Mounting: THT
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: tape
Case: DO27
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
кількість в упаковці: 1 шт
на замовлення 3329 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 66.45 грн |
| 7+ | 48.26 грн |
| 18+ | 17.02 грн |
| 25+ | 13.93 грн |
| 100+ | 10.85 грн |
| 250+ | 8.66 грн |
| 500+ | 7.76 грн |
| 1N5819 |
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Виробник: YANGJIE TECHNOLOGY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V; tape
Case: DO41
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 40V
Kind of package: tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V; tape
Case: DO41
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 40V
Kind of package: tape
на замовлення 520 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.82 грн |
| 91+ | 4.56 грн |
| 162+ | 2.56 грн |
| 500+ | 1.92 грн |
| 1N5819 |
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Виробник: YANGJIE TECHNOLOGY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V; tape
Case: DO41
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 40V
Kind of package: tape
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V; tape
Case: DO41
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 40V
Kind of package: tape
кількість в упаковці: 1 шт
на замовлення 520 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 11.79 грн |
| 55+ | 5.68 грн |
| 100+ | 3.08 грн |
| 500+ | 2.31 грн |
| 1000+ | 2.07 грн |
| 5000+ | 1.65 грн |
| 15000+ | 1.61 грн |
| 1N5822 |
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Виробник: YANGJIE TECHNOLOGY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO27; Ufmax: 0.525V; tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO27
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO27; Ufmax: 0.525V; tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO27
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: tape
товару немає в наявності
В кошику
од. на суму грн.
| 1N5822 |
![]() |
Виробник: YANGJIE TECHNOLOGY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO27; Ufmax: 0.525V; tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO27
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: tape
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO27; Ufmax: 0.525V; tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO27
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: tape
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| 1N5822 |
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Виробник: Yangjie Technology
Діод Шотткі вивідний; Io, A = 3; Uзвор, В = 40; If, А = 3; Тексп, °C = -55...+125; DO-27
Діод Шотткі вивідний; Io, A = 3; Uзвор, В = 40; If, А = 3; Тексп, °C = -55...+125; DO-27
на замовлення 10 шт:
термін постачання 3 дні (днів)В кошику од. на суму грн.
| 1SS355Q |
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Виробник: Yangjie Technology
Description: SOD-323 80V 0.15A Diodes Recti
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOD-323 80V 0.15A Diodes Recti
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.24 грн |
| 15000+ | 1.12 грн |
| 30000+ | 1.04 грн |
| 60000+ | 0.91 грн |
| 120000+ | 0.84 грн |
| 300000+ | 0.77 грн |
| 2N7002 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 200+ | 2.46 грн |
| 450+ | 0.96 грн |
| 500+ | 0.85 грн |
| 3000+ | 0.77 грн |
| 2N7002 |
![]() |
Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 25 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 25 шт
на замовлення 6000 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 125+ | 2.96 грн |
| 275+ | 1.20 грн |
| 500+ | 1.03 грн |
| 3000+ | 0.93 грн |
| 12000+ | 0.87 грн |
| 2N7002A |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3125 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 225+ | 2.21 грн |
| 450+ | 0.94 грн |
| 500+ | 0.84 грн |
| 3000+ | 0.75 грн |
| 2N7002K |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TRENCH POWER MV
Pulsed drain current: 1.5A
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TRENCH POWER MV
Pulsed drain current: 1.5A
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| 2N7002KC |
![]() |
Виробник: Yangjie Technology
Description: SOT-23 N 60V 0.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 N 60V 0.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.24 грн |
| 15000+ | 1.12 грн |
| 30000+ | 1.04 грн |
| 60000+ | 0.91 грн |
| 120000+ | 0.84 грн |
| 300000+ | 0.77 грн |
| 2N7002KCDW |
![]() |
Виробник: Yangjie Technology
Description: SOT-363 N 60V 0.3A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-363 N 60V 0.3A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.09 грн |
| 15000+ | 1.87 грн |
| 30000+ | 1.79 грн |
| 60000+ | 1.54 грн |
| 120000+ | 1.40 грн |
| 300000+ | 1.26 грн |
| 2N7002KCDWQ |
![]() |
Виробник: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.26 грн |
| 15000+ | 2.99 грн |
| 30000+ | 2.84 грн |
| 60000+ | 2.45 грн |
| 120000+ | 2.24 грн |
| 300000+ | 2.03 грн |
| 2N7002KCE |
![]() |
Виробник: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.55 грн |
| 15000+ | 1.42 грн |
| 30000+ | 1.27 грн |
| 60000+ | 1.12 грн |
| 120000+ | 1.05 грн |
| 300000+ | 0.98 грн |
| 2N7002KCQ |
![]() |
Виробник: Yangjie Technology
Description: SOT-23 N 60V 0.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 N 60V 0.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.56 грн |
| 15000+ | 2.31 грн |
| 30000+ | 2.16 грн |
| 60000+ | 1.89 грн |
| 120000+ | 1.75 грн |
| 300000+ | 1.61 грн |
| 2N7002KCW |
![]() |
Виробник: Yangjie Technology
Description: SOT-323 N 60V 0.3A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-323 N 60V 0.3A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.47 грн |
| 15000+ | 1.34 грн |
| 30000+ | 1.27 грн |
| 60000+ | 1.12 грн |
| 120000+ | 0.98 грн |
| 300000+ | 0.91 грн |
| 2N7002KCWQ |
![]() |
Виробник: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.87 грн |
| 15000+ | 2.61 грн |
| 30000+ | 2.46 грн |
| 60000+ | 2.17 грн |
| 120000+ | 1.89 грн |
| 300000+ | 1.75 грн |
| 2N7002KCX |
![]() |
Виробник: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.40 грн |
| 15000+ | 2.16 грн |
| 30000+ | 2.02 грн |
| 60000+ | 1.82 грн |
| 120000+ | 1.61 грн |
| 300000+ | 1.47 грн |
| 2N7002W |
![]() |
Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 200+ | 2.36 грн |
| 475+ | 0.92 грн |
| 500+ | 0.83 грн |
| 2N7002W |
![]() |
Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 25 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.272A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 25 шт
на замовлення 2100 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 125+ | 2.83 грн |
| 275+ | 1.15 грн |
| 500+ | 1.00 грн |
| 3000+ | 0.89 грн |
| 15000+ | 0.86 грн |
| 2SA1037-Q |
![]() |
Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Application: automotive industry
на замовлення 1150 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 175+ | 2.68 грн |
| 350+ | 1.24 грн |
| 500+ | 1.10 грн |
| 2SA1037-R |
![]() |
Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
товару немає в наявності
В кошику
од. на суму грн.
| 2SA1037-S |
![]() |
Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
товару немає в наявності
В кошику
од. на суму грн.
| 2SA1037-Q |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Description: Transistors - Bipolar (BJT) - Si
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.13 грн |
| 15000+ | 1.02 грн |
| 30000+ | 0.96 грн |
| 60000+ | 0.83 грн |
| 120000+ | 0.77 грн |
| 300000+ | 0.70 грн |
| 2SA1037-Q |
![]() |
Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Application: automotive industry
кількість в упаковці: 25 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SOT23
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Application: automotive industry
кількість в упаковці: 25 шт
на замовлення 1150 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 3.22 грн |
| 225+ | 1.54 грн |
| 500+ | 1.32 грн |
| 3000+ | 1.17 грн |
| 15000+ | 1.05 грн |
| 2SA1037-S |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Description: Transistors - Bipolar (BJT) - Si
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.06 грн |
| 15000+ | 0.96 грн |
| 30000+ | 0.89 грн |
| 60000+ | 0.77 грн |
| 120000+ | 0.70 грн |
| 300000+ | 0.64 грн |
| 2SA1576A-Q |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.47 грн |
| 15000+ | 1.34 грн |
| 30000+ | 1.27 грн |
| 60000+ | 1.05 грн |
| 120000+ | 0.98 грн |
| 300000+ | 0.91 грн |
| 2SA1576A-R |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.32 грн |
| 15000+ | 1.19 грн |
| 30000+ | 1.12 грн |
| 60000+ | 0.98 грн |
| 120000+ | 0.91 грн |
| 300000+ | 0.84 грн |
| 2SA1576A-S |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.32 грн |
| 15000+ | 1.19 грн |
| 30000+ | 1.12 грн |
| 60000+ | 0.98 грн |
| 120000+ | 0.91 грн |
| 300000+ | 0.84 грн |
| 2SA812-M5 |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.01 грн |
| 15000+ | 0.90 грн |
| 30000+ | 0.82 грн |
| 60000+ | 0.70 грн |
| 120000+ | 0.63 грн |
| 300000+ | 0.56 грн |









-Limited/MFG_4024_SOT-363.jpg)




