Продукція > YANGJIE TECHNOLOGY > Всі товари виробника YANGJIE TECHNOLOGY (3980) > Сторінка 16 з 67
Фото | Назва | Виробник | Інформація |
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DB156S | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 800V; If: 1.5A; Ifsm: 50A; DBS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 1.5A Max. forward impulse current: 50A Case: DBS Electrical mounting: SMT Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DB156S | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 800V; If: 1.5A; Ifsm: 50A; DBS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 1.5A Max. forward impulse current: 50A Case: DBS Electrical mounting: SMT Kind of package: reel; tape кількість в упаковці: 5 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DB157 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 1kV; If: 1.5A; Ifsm: 50A; DB; THT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 1.5A Max. forward impulse current: 50A Case: DB Electrical mounting: THT Kind of package: tube |
на замовлення 4079 шт: термін постачання 21-30 дні (днів) |
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DB157 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 1kV; If: 1.5A; Ifsm: 50A; DB; THT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 1.5A Max. forward impulse current: 50A Case: DB Electrical mounting: THT Kind of package: tube кількість в упаковці: 5 шт |
на замовлення 4079 шт: термін постачання 14-21 дні (днів) |
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DB157S | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 1kV; If: 1.5A; Ifsm: 50A; DBS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 1.5A Max. forward impulse current: 50A Case: DBS Electrical mounting: SMT Kind of package: reel; tape |
на замовлення 560 шт: термін постачання 21-30 дні (днів) |
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DB157S | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: single-phase; 1kV; If: 1.5A; Ifsm: 50A; DBS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 1.5A Max. forward impulse current: 50A Case: DBS Electrical mounting: SMT Kind of package: reel; tape кількість в упаковці: 5 шт |
на замовлення 560 шт: термін постачання 14-21 дні (днів) |
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DB205 | Yangjie Technology |
Description: DB 600V 2.0A Diodes Bridge Rec Packaging: Tube Package / Case: 4-EDIP (0.321", 8.15mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB-1 Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 250000 шт: термін постачання 21-31 дні (днів) |
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DB206 | Yangjie Technology |
![]() Packaging: Tube Package / Case: 4-EDIP (0.300", 7.62mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB-1 Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 250000 шт: термін постачання 21-31 дні (днів) |
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DB206S | Yangjie Technology |
![]() ![]() Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 150000 шт: термін постачання 21-31 дні (днів) |
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DBL207 | Yangjie Technology | Description: DBL 1000V 2.0A Diodes Bridge R |
на замовлення 250000 шт: термін постачання 21-31 дні (днів) |
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DBL207S | Yangjie Technology | Description: DBLS 1000V 2.0A Diodes Bridge |
на замовлення 150000 шт: термін постачання 21-31 дні (днів) |
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DDTA123YCA | YANGJIE TECHNOLOGY | DDTA123YCA-YAN PNP SMD transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DDTC113ZCA | Yangjie Technology |
Description: SOT-23 NPN 0.2W 0.5A Transistor Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DDTC113ZCA | YANGJIE TECHNOLOGY |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.25W; SOT23; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DDTC113ZCA | YANGJIE TECHNOLOGY |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.25W; SOT23; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ кількість в упаковці: 25 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DF25NA100 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: three-phase; Urmax: 1kV; If: 25A; Ifsm: 400A; THT Leads: flat pin Max. off-state voltage: 1kV Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.4kA Electrical mounting: THT Version: flat Type of bridge rectifier: three-phase Case: TSB-5 |
на замовлення 37 шт: термін постачання 21-30 дні (днів) |
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DF25NA100 | Yangjie Technology |
![]() Packaging: Bulk Part Status: Active |
на замовлення 9600 шт: термін постачання 21-31 дні (днів) |
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DF25NA100 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: three-phase; Urmax: 1kV; If: 25A; Ifsm: 400A; THT Leads: flat pin Max. off-state voltage: 1kV Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.4kA Electrical mounting: THT Version: flat Type of bridge rectifier: three-phase Case: TSB-5 кількість в упаковці: 1 шт |
на замовлення 37 шт: термін постачання 14-21 дні (днів) |
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DF25NA160 | Yangjie Technology |
![]() Packaging: Bulk Part Status: Active |
на замовлення 9600 шт: термін постачання 21-31 дні (днів) |
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DF25NA80 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers TSB-5 Packaging: Bulk Package / Case: 5-SIP, TSB-5 Mounting Type: Through Hole Diode Type: Three Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TSB-5 Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 9600 шт: термін постачання 21-31 дні (днів) |
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DF35NA100 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: three-phase; Urmax: 1kV; If: 35A; Ifsm: 400A; THT Type of bridge rectifier: three-phase Max. off-state voltage: 1kV Load current: 35A Max. forward impulse current: 0.4kA Electrical mounting: THT Version: flat Max. forward voltage: 1.2V Leads: flat pin Case: TSB-5 |
на замовлення 101 шт: термін постачання 21-30 дні (днів) |
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DF35NA100 | YANGJIE TECHNOLOGY |
![]() Description: Bridge rectifier: three-phase; Urmax: 1kV; If: 35A; Ifsm: 400A; THT Type of bridge rectifier: three-phase Max. off-state voltage: 1kV Load current: 35A Max. forward impulse current: 0.4kA Electrical mounting: THT Version: flat Max. forward voltage: 1.2V Leads: flat pin Case: TSB-5 кількість в упаковці: 1 шт |
на замовлення 101 шт: термін постачання 14-21 дні (днів) |
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DF35NA80 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers TSB-5 Packaging: Bulk Package / Case: 5-SIP, TSB-5 Mounting Type: Through Hole Diode Type: Three Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TSB-5 Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 17.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 9600 шт: термін постачання 21-31 дні (днів) |
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DGW15N120CTL | Yangjie Technology |
Description: Transistors - IGBTs - Single TO- Packaging: Tape & Reel (TR) Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 15A Supplier Device Package: TO-247 IGBT Type: Trench Td (on/off) @ 25°C: 45ns/128ns Switching Energy: 1.5mJ (on), 900µJ (off) Test Condition: 600V, 15A, 33Ohm, 15V Gate Charge: 140 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 200 W |
на замовлення 180000 шт: термін постачання 21-31 дні (днів) |
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DGW25N120CTL | Yangjie Technology |
Description: Transistors - IGBTs - Single TO- Packaging: Tape & Reel (TR) Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A Supplier Device Package: TO-247 IGBT Type: Trench Td (on/off) @ 25°C: 158ns/331ns Switching Energy: 1.8m (on), 1.4mJ (off) Test Condition: 600V, 25A, 18Ohm, 15V Gate Charge: 200 nC Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 326 W |
на замовлення 180000 шт: термін постачання 21-31 дні (днів) |
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DGW30N65BTH | Yangjie Technology |
Description: Transistors - IGBTs - Single TO- Packaging: Tape & Reel (TR) Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 37ns/113ns Switching Energy: 870µJ (on), 260µJ (off) Test Condition: 300V, 30A, 33Ohm, 15V Gate Charge: 150 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 187 W |
на замовлення 180000 шт: термін постачання 21-31 дні (днів) |
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DGW40N120CTL | Yangjie Technology |
Description: Transistors - IGBTs - Single TO- Packaging: Tape & Reel (TR) Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 45ns/180ns Switching Energy: 3.8mJ (on), 1.7mJ (off) Test Condition: 600V, 40A, 12Ohm, 15V Gate Charge: 330 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 428 W |
на замовлення 180000 шт: термін постачання 21-31 дні (днів) |
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DGW50N65CTL1 | Yangjie Technology |
Description: Transistors - IGBTs - Single TO- Packaging: Tape & Reel (TR) Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A Supplier Device Package: TO-247AB Td (on/off) @ 25°C: 55ns/319ns Switching Energy: 1.27mJ (on), 650µJ (off) Test Condition: 300V, 50A, 10Ohm, 15V Gate Charge: 450 nC Part Status: Active Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 326 W |
на замовлення 180000 шт: термін постачання 21-31 дні (днів) |
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DGW75N65CTL1 | Yangjie Technology |
Description: Transistors - IGBTs - Single TO- Packaging: Tape & Reel (TR) Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A Supplier Device Package: TO-247AB Td (on/off) @ 25°C: 75ns/468ns Switching Energy: 2.5mJ (on), 1.3mJ (off) Test Condition: 300V, 75A, 10Ohm, 15V Gate Charge: 580 nC Part Status: Active Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 395 W |
на замовлення 180000 шт: термін постачання 21-31 дні (днів) |
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DS521-30L2 | Yangjie Technology |
Description: Diodes - Rectifiers - Single DFN Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: DFN1006-2L Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA Current - Reverse Leakage @ Vr: 10 µA @ 10 V |
на замовлення 1000000 шт: термін постачання 21-31 дні (днів) |
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DTA113ZCA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ |
на замовлення 775 шт: термін постачання 21-30 дні (днів) |
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DTA113ZCA | Yangjie Technology | Description: SOT-23 PNP 0.2W -0.1A Transisto |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTA113ZCA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ кількість в упаковці: 25 шт |
на замовлення 775 шт: термін постачання 14-21 дні (днів) |
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DTA113ZE | Yangjie Technology | Description: Transistors - Bipolar (BJT) - Si |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTA113ZUA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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DTA113ZUA | Yangjie Technology | Description: SOT-323 PNP 0.2W -0.1A Transist |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTA113ZUA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ кількість в упаковці: 25 шт |
на замовлення 50 шт: термін постачання 14-21 дні (днів) |
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DTA114ECA | Yangjie Technology |
Description: SOT-23 PNP 0.2W -0.1A Transisto Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTA114ECA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
на замовлення 3950 шт: термін постачання 21-30 дні (днів) |
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DTA114ECA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ кількість в упаковці: 25 шт |
на замовлення 3950 шт: термін постачання 14-21 дні (днів) |
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DTA114EUA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
на замовлення 1975 шт: термін постачання 21-30 дні (днів) |
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DTA114EUA | Yangjie Technology |
Description: SOT-323 PNP 0.2W -0.1A Transist Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTA114EUA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ кількість в упаковці: 25 шт |
на замовлення 1975 шт: термін постачання 14-21 дні (днів) |
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DTA114YCA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
на замовлення 2950 шт: термін постачання 21-30 дні (днів) |
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DTA114YCA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ кількість в упаковці: 25 шт |
на замовлення 2950 шт: термін постачання 14-21 дні (днів) |
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DTA123ECA | Yangjie Technology |
Description: SOT-23 PNP 0.2W -0.1A Transisto Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 2.2 kOhms |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTA123ECA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Base-emitter resistor: 2.2kΩ Frequency: 250MHz Kind of transistor: BRT Base resistor: 2.2kΩ |
на замовлення 2475 шт: термін постачання 21-30 дні (днів) |
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DTA123ECA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Base-emitter resistor: 2.2kΩ Frequency: 250MHz Kind of transistor: BRT Base resistor: 2.2kΩ кількість в упаковці: 25 шт |
на замовлення 2475 шт: термін постачання 14-21 дні (днів) |
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DTA123JCA | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTA123JE | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SOT-523 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTA123JUA | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTA124ECA | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 5V Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTA124EUA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 22kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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DTA124EUA | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTA124EUA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 22kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ кількість в упаковці: 25 шт |
на замовлення 2500 шт: термін постачання 14-21 дні (днів) |
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DTA143ECA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ |
на замовлення 5350 шт: термін постачання 21-30 дні (днів) |
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DTA143ECA | Yangjie Technology |
Description: SOT-23 PNP 0.2W -0.1A Transisto Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTA143ECA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ кількість в упаковці: 25 шт |
на замовлення 5350 шт: термін постачання 14-21 дні (днів) |
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DTA143EE | Yangjie Technology |
Description: SOT-523 PNP 0.15W -0.1A Transis Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: SOT-523 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTA143EUA | Yangjie Technology |
Description: SOT-323 PNP 0.2W -0.1A Transist Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DB156S |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 1.5A; Ifsm: 50A; DBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: DBS
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 1.5A; Ifsm: 50A; DBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: DBS
Electrical mounting: SMT
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
DB156S |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 1.5A; Ifsm: 50A; DBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: DBS
Electrical mounting: SMT
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 1.5A; Ifsm: 50A; DBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: DBS
Electrical mounting: SMT
Kind of package: reel; tape
кількість в упаковці: 5 шт
товару немає в наявності
В кошику
од. на суму грн.
DB157 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 1.5A; Ifsm: 50A; DB; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: DB
Electrical mounting: THT
Kind of package: tube
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 1.5A; Ifsm: 50A; DB; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: DB
Electrical mounting: THT
Kind of package: tube
на замовлення 4079 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
35+ | 11.89 грн |
60+ | 6.50 грн |
100+ | 5.82 грн |
170+ | 5.23 грн |
465+ | 4.94 грн |
2500+ | 4.76 грн |
DB157 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 1.5A; Ifsm: 50A; DB; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: DB
Electrical mounting: THT
Kind of package: tube
кількість в упаковці: 5 шт
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 1.5A; Ifsm: 50A; DB; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: DB
Electrical mounting: THT
Kind of package: tube
кількість в упаковці: 5 шт
на замовлення 4079 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
25+ | 14.26 грн |
35+ | 8.10 грн |
100+ | 6.98 грн |
170+ | 6.28 грн |
465+ | 5.93 грн |
2500+ | 5.71 грн |
DB157S |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 1.5A; Ifsm: 50A; DBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: DBS
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 1.5A; Ifsm: 50A; DBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: DBS
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 560 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
35+ | 13.02 грн |
55+ | 7.33 грн |
100+ | 6.58 грн |
155+ | 5.90 грн |
415+ | 5.59 грн |
DB157S |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 1.5A; Ifsm: 50A; DBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: DBS
Electrical mounting: SMT
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 1.5A; Ifsm: 50A; DBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: DBS
Electrical mounting: SMT
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 560 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
20+ | 15.63 грн |
35+ | 9.14 грн |
100+ | 7.89 грн |
155+ | 7.08 грн |
415+ | 6.71 грн |
1500+ | 6.44 грн |
DB205 |
Виробник: Yangjie Technology
Description: DB 600V 2.0A Diodes Bridge Rec
Packaging: Tube
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB-1
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DB 600V 2.0A Diodes Bridge Rec
Packaging: Tube
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB-1
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 250000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 9.03 грн |
12500+ | 8.20 грн |
25000+ | 7.71 грн |
50000+ | 6.83 грн |
100000+ | 6.10 грн |
250000+ | 5.71 грн |
DB206 |
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Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers DB 2A
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB-1
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: Diodes - Bridge Rectifiers DB 2A
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB-1
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 250000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 9.66 грн |
12500+ | 8.77 грн |
25000+ | 8.24 грн |
50000+ | 7.31 грн |
100000+ | 6.53 грн |
250000+ | 6.10 грн |
DB206S |
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Виробник: Yangjie Technology
Description: DBS 800V 2.0A Diodes Bridge Re
Packaging: Tape & Reel (TR)
Part Status: Active
Description: DBS 800V 2.0A Diodes Bridge Re
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 150000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 9.66 грн |
7500+ | 8.77 грн |
15000+ | 8.24 грн |
30000+ | 7.31 грн |
60000+ | 6.53 грн |
150000+ | 6.10 грн |
DBL207 |
Виробник: Yangjie Technology
Description: DBL 1000V 2.0A Diodes Bridge R
Description: DBL 1000V 2.0A Diodes Bridge R
на замовлення 250000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 9.10 грн |
12500+ | 8.26 грн |
25000+ | 7.76 грн |
50000+ | 6.89 грн |
100000+ | 6.15 грн |
250000+ | 5.75 грн |
DBL207S |
Виробник: Yangjie Technology
Description: DBLS 1000V 2.0A Diodes Bridge
Description: DBLS 1000V 2.0A Diodes Bridge
на замовлення 150000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 9.10 грн |
7500+ | 8.26 грн |
15000+ | 7.76 грн |
30000+ | 6.89 грн |
60000+ | 6.15 грн |
150000+ | 5.75 грн |
DDTA123YCA |
Виробник: YANGJIE TECHNOLOGY
DDTA123YCA-YAN PNP SMD transistors
DDTA123YCA-YAN PNP SMD transistors
товару немає в наявності
В кошику
од. на суму грн.
DDTC113ZCA |
Виробник: Yangjie Technology
Description: SOT-23 NPN 0.2W 0.5A Transistor
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 NPN 0.2W 0.5A Transistor
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 3.14 грн |
15000+ | 2.87 грн |
30000+ | 2.72 грн |
60000+ | 2.34 грн |
120000+ | 2.13 грн |
300000+ | 1.99 грн |
DDTC113ZCA |
Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.25W; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.25W; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
товару немає в наявності
В кошику
од. на суму грн.
DDTC113ZCA |
Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.25W; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
кількість в упаковці: 25 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.25W; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
кількість в упаковці: 25 шт
товару немає в наявності
В кошику
од. на суму грн.
DF25NA100 |
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Виробник: YANGJIE TECHNOLOGY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1kV; If: 25A; Ifsm: 400A; THT
Leads: flat pin
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.4kA
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Case: TSB-5
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1kV; If: 25A; Ifsm: 400A; THT
Leads: flat pin
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.4kA
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Case: TSB-5
на замовлення 37 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 131.06 грн |
5+ | 109.61 грн |
10+ | 92.98 грн |
27+ | 87.68 грн |
DF25NA100 |
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Виробник: Yangjie Technology
Description: TSB-5 1000V 25.0A Diodes Bridg
Packaging: Bulk
Part Status: Active
Description: TSB-5 1000V 25.0A Diodes Bridg
Packaging: Bulk
Part Status: Active
на замовлення 9600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
96+ | 146.95 грн |
480+ | 133.64 грн |
960+ | 125.78 грн |
1920+ | 110.66 грн |
3840+ | 99.60 грн |
9600+ | 92.22 грн |
DF25NA100 |
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Виробник: YANGJIE TECHNOLOGY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1kV; If: 25A; Ifsm: 400A; THT
Leads: flat pin
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.4kA
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Case: TSB-5
кількість в упаковці: 1 шт
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1kV; If: 25A; Ifsm: 400A; THT
Leads: flat pin
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.4kA
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Case: TSB-5
кількість в упаковці: 1 шт
на замовлення 37 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
2+ | 157.27 грн |
5+ | 136.59 грн |
10+ | 111.57 грн |
27+ | 105.22 грн |
DF25NA160 |
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Виробник: Yangjie Technology
Description: TSB-5 1600V 25.0A Diodes Bridg
Packaging: Bulk
Part Status: Active
Description: TSB-5 1600V 25.0A Diodes Bridg
Packaging: Bulk
Part Status: Active
на замовлення 9600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
96+ | 179.45 грн |
480+ | 163.20 грн |
960+ | 153.60 грн |
1920+ | 135.14 грн |
3840+ | 121.59 грн |
9600+ | 112.58 грн |
DF25NA80 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers TSB-5
Packaging: Bulk
Package / Case: 5-SIP, TSB-5
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TSB-5
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: Diodes - Bridge Rectifiers TSB-5
Packaging: Bulk
Package / Case: 5-SIP, TSB-5
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TSB-5
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 9600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
96+ | 146.95 грн |
480+ | 133.64 грн |
960+ | 125.78 грн |
1920+ | 110.66 грн |
3840+ | 99.60 грн |
9600+ | 92.22 грн |
DF35NA100 |
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Виробник: YANGJIE TECHNOLOGY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1kV; If: 35A; Ifsm: 400A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.2V
Leads: flat pin
Case: TSB-5
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1kV; If: 35A; Ifsm: 400A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.2V
Leads: flat pin
Case: TSB-5
на замовлення 101 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 190.49 грн |
5+ | 158.74 грн |
7+ | 138.33 грн |
18+ | 130.77 грн |
96+ | 126.24 грн |
DF35NA100 |
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Виробник: YANGJIE TECHNOLOGY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1kV; If: 35A; Ifsm: 400A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.2V
Leads: flat pin
Case: TSB-5
кількість в упаковці: 1 шт
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1kV; If: 35A; Ifsm: 400A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.2V
Leads: flat pin
Case: TSB-5
кількість в упаковці: 1 шт
на замовлення 101 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
2+ | 228.58 грн |
5+ | 197.81 грн |
7+ | 166.00 грн |
18+ | 156.92 грн |
96+ | 151.48 грн |
DF35NA80 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers TSB-5
Packaging: Bulk
Package / Case: 5-SIP, TSB-5
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TSB-5
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: Diodes - Bridge Rectifiers TSB-5
Packaging: Bulk
Package / Case: 5-SIP, TSB-5
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TSB-5
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 9600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
96+ | 228.66 грн |
480+ | 207.95 грн |
960+ | 195.70 грн |
1920+ | 172.24 грн |
3840+ | 155.00 грн |
9600+ | 143.51 грн |
DGW15N120CTL |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 15A
Supplier Device Package: TO-247
IGBT Type: Trench
Td (on/off) @ 25°C: 45ns/128ns
Switching Energy: 1.5mJ (on), 900µJ (off)
Test Condition: 600V, 15A, 33Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 200 W
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 15A
Supplier Device Package: TO-247
IGBT Type: Trench
Td (on/off) @ 25°C: 45ns/128ns
Switching Energy: 1.5mJ (on), 900µJ (off)
Test Condition: 600V, 15A, 33Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 200 W
на замовлення 180000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1800+ | 175.68 грн |
9000+ | 159.80 грн |
18000+ | 150.35 грн |
36000+ | 132.30 грн |
72000+ | 119.11 грн |
180000+ | 110.24 грн |
DGW25N120CTL |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A
Supplier Device Package: TO-247
IGBT Type: Trench
Td (on/off) @ 25°C: 158ns/331ns
Switching Energy: 1.8m (on), 1.4mJ (off)
Test Condition: 600V, 25A, 18Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 326 W
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A
Supplier Device Package: TO-247
IGBT Type: Trench
Td (on/off) @ 25°C: 158ns/331ns
Switching Energy: 1.8m (on), 1.4mJ (off)
Test Condition: 600V, 25A, 18Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 326 W
на замовлення 180000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1800+ | 253.23 грн |
9000+ | 230.25 грн |
18000+ | 216.72 грн |
36000+ | 190.68 грн |
72000+ | 171.60 грн |
180000+ | 158.90 грн |
DGW30N65BTH |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 37ns/113ns
Switching Energy: 870µJ (on), 260µJ (off)
Test Condition: 300V, 30A, 33Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 37ns/113ns
Switching Energy: 870µJ (on), 260µJ (off)
Test Condition: 300V, 30A, 33Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
на замовлення 180000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1800+ | 175.52 грн |
9000+ | 159.65 грн |
18000+ | 150.27 грн |
36000+ | 132.23 грн |
72000+ | 118.96 грн |
180000+ | 110.17 грн |
DGW40N120CTL |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 45ns/180ns
Switching Energy: 3.8mJ (on), 1.7mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 428 W
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 45ns/180ns
Switching Energy: 3.8mJ (on), 1.7mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 428 W
на замовлення 180000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1800+ | 337.62 грн |
9000+ | 307.05 грн |
18000+ | 288.98 грн |
36000+ | 254.24 грн |
72000+ | 228.85 грн |
180000+ | 211.89 грн |
DGW50N65CTL1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
Supplier Device Package: TO-247AB
Td (on/off) @ 25°C: 55ns/319ns
Switching Energy: 1.27mJ (on), 650µJ (off)
Test Condition: 300V, 50A, 10Ohm, 15V
Gate Charge: 450 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 326 W
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
Supplier Device Package: TO-247AB
Td (on/off) @ 25°C: 55ns/319ns
Switching Energy: 1.27mJ (on), 650µJ (off)
Test Condition: 300V, 50A, 10Ohm, 15V
Gate Charge: 450 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 326 W
на замовлення 180000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1800+ | 293.74 грн |
9000+ | 267.13 грн |
18000+ | 251.41 грн |
36000+ | 221.19 грн |
72000+ | 199.05 грн |
180000+ | 184.30 грн |
DGW75N65CTL1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
Supplier Device Package: TO-247AB
Td (on/off) @ 25°C: 75ns/468ns
Switching Energy: 2.5mJ (on), 1.3mJ (off)
Test Condition: 300V, 75A, 10Ohm, 15V
Gate Charge: 580 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
Supplier Device Package: TO-247AB
Td (on/off) @ 25°C: 75ns/468ns
Switching Energy: 2.5mJ (on), 1.3mJ (off)
Test Condition: 300V, 75A, 10Ohm, 15V
Gate Charge: 580 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
на замовлення 180000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1800+ | 506.39 грн |
9000+ | 460.57 грн |
18000+ | 433.51 грн |
36000+ | 381.36 грн |
72000+ | 343.20 грн |
180000+ | 317.80 грн |
DS521-30L2 |
Виробник: Yangjie Technology
Description: Diodes - Rectifiers - Single DFN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: DFN1006-2L
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Description: Diodes - Rectifiers - Single DFN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: DFN1006-2L
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
на замовлення 1000000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10000+ | 1.57 грн |
50000+ | 1.44 грн |
100000+ | 1.36 грн |
200000+ | 1.21 грн |
400000+ | 1.06 грн |
1000000+ | 0.99 грн |
DTA113ZCA |
Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
на замовлення 775 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
175+ | 2.41 грн |
350+ | 1.16 грн |
500+ | 1.02 грн |
DTA113ZCA |
Виробник: Yangjie Technology
Description: SOT-23 PNP 0.2W -0.1A Transisto
Description: SOT-23 PNP 0.2W -0.1A Transisto
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.43 грн |
15000+ | 1.31 грн |
30000+ | 1.24 грн |
60000+ | 1.10 грн |
120000+ | 0.97 грн |
300000+ | 0.91 грн |
DTA113ZCA |
Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
кількість в упаковці: 25 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
кількість в упаковці: 25 шт
на замовлення 775 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
125+ | 2.89 грн |
200+ | 1.44 грн |
500+ | 1.22 грн |
2400+ | 1.17 грн |
3000+ | 1.12 грн |
DTA113ZE |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Description: Transistors - Bipolar (BJT) - Si
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.51 грн |
15000+ | 1.38 грн |
30000+ | 1.31 грн |
60000+ | 1.17 грн |
120000+ | 1.04 грн |
300000+ | 0.97 грн |
DTA113ZUA |
Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
на замовлення 50 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.14 грн |
DTA113ZUA |
Виробник: Yangjie Technology
Description: SOT-323 PNP 0.2W -0.1A Transist
Description: SOT-323 PNP 0.2W -0.1A Transist
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.43 грн |
15000+ | 1.31 грн |
30000+ | 1.24 грн |
60000+ | 1.10 грн |
120000+ | 0.97 грн |
300000+ | 0.91 грн |
DTA113ZUA |
Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
кількість в упаковці: 25 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
кількість в упаковці: 25 шт
на замовлення 50 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
50+ | 5.86 грн |
100+ | 2.83 грн |
500+ | 1.14 грн |
1075+ | 1.00 грн |
2950+ | 0.94 грн |
DTA114ECA |
Виробник: Yangjie Technology
Description: SOT-23 PNP 0.2W -0.1A Transisto
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Description: SOT-23 PNP 0.2W -0.1A Transisto
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.57 грн |
15000+ | 1.44 грн |
30000+ | 1.36 грн |
60000+ | 1.21 грн |
120000+ | 1.06 грн |
300000+ | 0.99 грн |
DTA114ECA |
Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
на замовлення 3950 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
200+ | 2.18 грн |
375+ | 1.05 грн |
500+ | 0.93 грн |
2625+ | 0.88 грн |
3000+ | 0.85 грн |
DTA114ECA |
Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
кількість в упаковці: 25 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
кількість в упаковці: 25 шт
на замовлення 3950 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
125+ | 2.62 грн |
225+ | 1.31 грн |
500+ | 1.12 грн |
2625+ | 1.06 грн |
3000+ | 1.02 грн |
DTA114EUA |
Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
на замовлення 1975 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
200+ | 2.18 грн |
350+ | 1.16 грн |
500+ | 1.02 грн |
DTA114EUA |
Виробник: Yangjie Technology
Description: SOT-323 PNP 0.2W -0.1A Transist
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Description: SOT-323 PNP 0.2W -0.1A Transist
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.57 грн |
15000+ | 1.44 грн |
30000+ | 1.36 грн |
60000+ | 1.21 грн |
120000+ | 1.06 грн |
300000+ | 0.99 грн |
DTA114EUA |
Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
кількість в упаковці: 25 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
кількість в упаковці: 25 шт
на замовлення 1975 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
125+ | 2.62 грн |
200+ | 1.44 грн |
500+ | 1.22 грн |
2400+ | 1.17 грн |
3000+ | 1.12 грн |
DTA114YCA |
Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
на замовлення 2950 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
200+ | 2.18 грн |
350+ | 1.16 грн |
500+ | 1.02 грн |
1025+ | 0.89 грн |
2775+ | 0.84 грн |
DTA114YCA |
Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 25 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 25 шт
на замовлення 2950 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
125+ | 2.62 грн |
200+ | 1.44 грн |
500+ | 1.22 грн |
1025+ | 1.07 грн |
2775+ | 1.01 грн |
DTA123ECA |
Виробник: Yangjie Technology
Description: SOT-23 PNP 0.2W -0.1A Transisto
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Description: SOT-23 PNP 0.2W -0.1A Transisto
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.57 грн |
15000+ | 1.44 грн |
30000+ | 1.36 грн |
60000+ | 1.21 грн |
120000+ | 1.06 грн |
300000+ | 0.99 грн |
DTA123ECA |
Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 2.2kΩ
Frequency: 250MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 2.2kΩ
Frequency: 250MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
на замовлення 2475 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
200+ | 2.21 грн |
350+ | 1.16 грн |
500+ | 1.02 грн |
2400+ | 0.97 грн |
DTA123ECA |
Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 2.2kΩ
Frequency: 250MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
кількість в упаковці: 25 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 2.2kΩ
Frequency: 250MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
кількість в упаковці: 25 шт
на замовлення 2475 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
125+ | 2.66 грн |
200+ | 1.44 грн |
500+ | 1.22 грн |
2400+ | 1.17 грн |
3000+ | 1.12 грн |
DTA123JCA |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.88 грн |
15000+ | 1.74 грн |
30000+ | 1.59 грн |
60000+ | 1.42 грн |
120000+ | 1.28 грн |
300000+ | 1.21 грн |
DTA123JE |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.65 грн |
15000+ | 1.51 грн |
30000+ | 1.44 грн |
60000+ | 1.28 грн |
120000+ | 1.14 грн |
300000+ | 1.06 грн |
DTA123JUA |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.88 грн |
15000+ | 1.74 грн |
30000+ | 1.59 грн |
60000+ | 1.42 грн |
120000+ | 1.28 грн |
300000+ | 1.21 грн |
DTA124ECA |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.88 грн |
15000+ | 1.74 грн |
30000+ | 1.59 грн |
60000+ | 1.42 грн |
120000+ | 1.28 грн |
300000+ | 1.21 грн |
DTA124EUA |
Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
175+ | 2.41 грн |
350+ | 1.16 грн |
500+ | 1.02 грн |
2400+ | 0.97 грн |
DTA124EUA |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.57 грн |
15000+ | 1.44 грн |
30000+ | 1.36 грн |
60000+ | 1.21 грн |
120000+ | 1.06 грн |
300000+ | 0.99 грн |
DTA124EUA |
Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
кількість в упаковці: 25 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
кількість в упаковці: 25 шт
на замовлення 2500 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
125+ | 2.89 грн |
200+ | 1.44 грн |
500+ | 1.22 грн |
2400+ | 1.17 грн |
3000+ | 1.12 грн |
DTA143ECA |
Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
на замовлення 5350 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
200+ | 2.18 грн |
400+ | 0.96 грн |
500+ | 0.85 грн |
1100+ | 0.83 грн |
2975+ | 0.78 грн |
3000+ | 0.76 грн |
DTA143ECA |
Виробник: Yangjie Technology
Description: SOT-23 PNP 0.2W -0.1A Transisto
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Description: SOT-23 PNP 0.2W -0.1A Transisto
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.57 грн |
15000+ | 1.44 грн |
30000+ | 1.36 грн |
60000+ | 1.21 грн |
120000+ | 1.06 грн |
300000+ | 0.99 грн |
DTA143ECA |
Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
кількість в упаковці: 25 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
кількість в упаковці: 25 шт
на замовлення 5350 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
125+ | 2.62 грн |
250+ | 1.20 грн |
500+ | 1.02 грн |
1100+ | 0.99 грн |
2975+ | 0.94 грн |
3000+ | 0.92 грн |
15000+ | 0.90 грн |
DTA143EE |
Виробник: Yangjie Technology
Description: SOT-523 PNP 0.15W -0.1A Transis
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Description: SOT-523 PNP 0.15W -0.1A Transis
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.04 грн |
15000+ | 1.81 грн |
30000+ | 1.74 грн |
60000+ | 1.49 грн |
120000+ | 1.35 грн |
300000+ | 1.28 грн |
DTA143EUA |
Виробник: Yangjie Technology
Description: SOT-323 PNP 0.2W -0.1A Transist
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Description: SOT-323 PNP 0.2W -0.1A Transist
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.57 грн |
15000+ | 1.44 грн |
30000+ | 1.36 грн |
60000+ | 1.21 грн |
120000+ | 1.06 грн |
300000+ | 0.99 грн |