Продукція > ALPHA & OMEGA SEMICONDUCTOR INC. > Всі товари виробника ALPHA & OMEGA SEMICONDUCTOR INC. (3943) > Сторінка 32 з 66
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AON7254 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 150V 5.5A/17A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V Power Dissipation (Max): 4.1W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 75 V |
на замовлення 22273 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AON7262E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 21A/34A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AON7262E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 21A/34A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 30 V |
на замовлення 3271 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AON7264C | Alpha & Omega Semiconductor Inc. |
Description: NPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 13.2mOhm @ 13A, 10V Power Dissipation (Max): 4.1W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 895 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AON7264E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CHANNEL 60V 28A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V Power Dissipation (Max): 27.5W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AON7280 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 80V 20A/50A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Power Dissipation (Max): 6.3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 40 V |
на замовлення 8500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AON7280 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 80V 20A/50A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Power Dissipation (Max): 6.3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 40 V |
на замовлення 8657 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AON7290 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N CH 100V 15A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 15A, 10V Power Dissipation (Max): 6.25W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AON7292 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 9A/23A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V Power Dissipation (Max): 4.1W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V |
на замовлення 54000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AON7292 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 9A/23A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V Power Dissipation (Max): 4.1W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V |
на замовлення 56073 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AON7296 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 5A/12.5A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 12.5A (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V |
на замовлення 42567 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AON7296 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 5A/12.5A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 12.5A (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AON7318 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 36.5A/50A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36.5A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 20A, 10V Power Dissipation (Max): 4.1W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AON7318 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 36.5A/50A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36.5A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 20A, 10V Power Dissipation (Max): 4.1W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V |
на замовлення 12504 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AON7380 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 24A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V Power Dissipation (Max): 4.1W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AON7400 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 10A/26A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 26A (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1452 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AON7400A | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 15A/40A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AON7400A | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 15A/40A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V |
на замовлення 8197 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AON7400AL | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 15A/40A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AON7400AL_101 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 15A/40A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AON7400AL_102 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 15A/40A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AON7400AL_103 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 15A/40A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AON7400B | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 18A/40A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V Power Dissipation (Max): 4.1W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
AON7400B_101 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 18A/40A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V Power Dissipation (Max): 4.1W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AON7401 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 12A/35A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V Power Dissipation (Max): 3.1W (Ta), 29W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
AON7401_101 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 12A/35A 8DFNPackaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V Power Dissipation (Max): 3.1W (Ta), 29W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AON7401L | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 9A/20A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 20V Power Dissipation (Max): 1.6W (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AON7402 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 13.5A/39A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 39A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 26W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
AON7402_101 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 13.5A/39A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 39A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 26W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AON7402L | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 13.5A/39A 8DFN Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 39A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 26W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AON7403 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 11A/29A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 29A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V Power Dissipation (Max): 3.1W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 15 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AON7403 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 11A/29A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 29A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V Power Dissipation (Max): 3.1W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 15 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AON7403L | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 8A/20A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V Power Dissipation (Max): 1.6W (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
AON7403L_001 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 11A/29A 8DFNPackaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 29A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V Power Dissipation (Max): 4.1W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AON7404 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 20V 20A/40A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 4.5V Power Dissipation (Max): 3.1W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4630 pF @ 10 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AON7404 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 20V 20A/40A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 4.5V Power Dissipation (Max): 3.1W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4630 pF @ 10 V |
на замовлення 8812 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AON7404G | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 20V 20A/20A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 4.5V Power Dissipation (Max): 5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V |
на замовлення 3558 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AON7404G | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 20V 20A/20A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 4.5V Power Dissipation (Max): 5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AON7405 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 25A/50A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
AON7405_001 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 25A/50A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AON7406 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 9A/25A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 3.1W (Ta), 15.5W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 15 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AON7406 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 9A/25A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 3.1W (Ta), 15.5W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 15 V |
на замовлення 22218 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
| AON7406L | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 8DFN Packaging: Tape & Reel (TR) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
AON7407 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 20V 14.5A/40A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 4.5V Power Dissipation (Max): 3.1W (Ta), 29W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4195 pF @ 10 V |
на замовлення 9336 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AON7407 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 20V 14.5A/40A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 4.5V Power Dissipation (Max): 3.1W (Ta), 29W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4195 pF @ 10 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AON7408 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 10A/18A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta), 11W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AON7408 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 10A/18A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta), 11W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AON7408L | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 7.5A/20A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 20A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 9A, 10V Power Dissipation (Max): 1.7W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AON7409 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 16A/32A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16A, 10V Power Dissipation (Max): 3.1W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AON7410 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 9.5A/24A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 3.1W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V |
на замовлення 240000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AON7410 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 9.5A/24A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 3.1W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V |
на замовлення 248937 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
AON7410_106 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 9.5A/24A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 3.1W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AON7410L | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 8A/20A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 1.7W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
AON7410L_101 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 9.5A/24A 8DFNPackaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 3.1W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
AON7410L_105 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 8A/20A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 1.7W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AON7412 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 10A/16A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 466 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AON7412 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 10A/16A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 466 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AON7414 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 12.5A/20A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Power Dissipation (Max): 4.1W (Ta), 15.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AON7416 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 14A/40A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 1.7V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AON7416 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 14A/40A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 1.7V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 |
товару немає в наявності |
В кошику од. на суму грн. |
| AON7254 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 150V 5.5A/17A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Power Dissipation (Max): 4.1W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 75 V
Description: MOSFET N-CH 150V 5.5A/17A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Power Dissipation (Max): 4.1W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 75 V
на замовлення 22273 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 131.78 грн |
| 10+ | 80.40 грн |
| 100+ | 54.11 грн |
| 500+ | 40.19 грн |
| 1000+ | 37.05 грн |
| AON7262E |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 21A/34A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 30 V
Description: MOSFET N-CH 60V 21A/34A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| AON7262E |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 21A/34A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 30 V
Description: MOSFET N-CH 60V 21A/34A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 30 V
на замовлення 3271 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 106.41 грн |
| 10+ | 64.79 грн |
| 100+ | 43.14 грн |
| 500+ | 31.75 грн |
| 1000+ | 28.94 грн |
| 2000+ | 27.76 грн |
| AON7264C |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 13A, 10V
Power Dissipation (Max): 4.1W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 895 pF @ 30 V
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 13A, 10V
Power Dissipation (Max): 4.1W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 895 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| AON7264E |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CHANNEL 60V 28A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V
Power Dissipation (Max): 27.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
Description: MOSFET N-CHANNEL 60V 28A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V
Power Dissipation (Max): 27.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| AON7280 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 80V 20A/50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 40 V
Description: MOSFET N-CH 80V 20A/50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 40 V
на замовлення 8500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 45.30 грн |
| 6000+ | 42.21 грн |
| AON7280 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 80V 20A/50A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 40 V
Description: MOSFET N-CH 80V 20A/50A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 40 V
на замовлення 8657 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 159.61 грн |
| 10+ | 98.45 грн |
| 100+ | 66.95 грн |
| 500+ | 50.17 грн |
| 1000+ | 48.48 грн |
| AON7290 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N CH 100V 15A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 15A, 10V
Power Dissipation (Max): 6.25W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 50 V
Description: MOSFET N CH 100V 15A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 15A, 10V
Power Dissipation (Max): 6.25W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| AON7292 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 9A/23A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Power Dissipation (Max): 4.1W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V
Description: MOSFET N-CH 100V 9A/23A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Power Dissipation (Max): 4.1W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 32.40 грн |
| 6000+ | 29.06 грн |
| 9000+ | 28.59 грн |
| AON7292 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 9A/23A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Power Dissipation (Max): 4.1W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V
Description: MOSFET N-CH 100V 9A/23A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Power Dissipation (Max): 4.1W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V
на замовлення 56073 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 120.32 грн |
| 10+ | 73.46 грн |
| 100+ | 49.22 грн |
| 500+ | 36.42 грн |
| 1000+ | 33.27 грн |
| AON7296 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 5A/12.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
Description: MOSFET N-CH 100V 5A/12.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
на замовлення 42567 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 71.21 грн |
| 10+ | 42.80 грн |
| 100+ | 27.93 грн |
| 500+ | 20.20 грн |
| 1000+ | 18.27 грн |
| 2000+ | 16.64 грн |
| AON7296 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 5A/12.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
Description: MOSFET N-CH 100V 5A/12.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 16.46 грн |
| 10000+ | 14.69 грн |
| 15000+ | 14.10 грн |
| 25000+ | 12.94 грн |
| AON7318 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 36.5A/50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 20A, 10V
Power Dissipation (Max): 4.1W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V
Description: MOSFET N-CH 30V 36.5A/50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 20A, 10V
Power Dissipation (Max): 4.1W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 24.85 грн |
| 6000+ | 22.20 грн |
| 9000+ | 21.31 грн |
| AON7318 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 36.5A/50A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 20A, 10V
Power Dissipation (Max): 4.1W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V
Description: MOSFET N-CH 30V 36.5A/50A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 20A, 10V
Power Dissipation (Max): 4.1W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V
на замовлення 12504 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 96.59 грн |
| 10+ | 58.25 грн |
| 100+ | 38.54 грн |
| 500+ | 28.25 грн |
| 1000+ | 25.70 грн |
| AON7380 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 24A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V
Power Dissipation (Max): 4.1W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 15 V
Description: MOSFET N-CH 30V 24A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V
Power Dissipation (Max): 4.1W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| AON7400 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 10A/26A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1452 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Description: MOSFET N-CH 30V 10A/26A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1452 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
товару немає в наявності
В кошику
од. на суму грн.
| AON7400A |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 15A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V
Description: MOSFET N-CH 30V 15A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 10.25 грн |
| AON7400A |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 15A/40A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V
Description: MOSFET N-CH 30V 15A/40A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V
на замовлення 8197 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 47.48 грн |
| 12+ | 28.30 грн |
| 100+ | 18.15 грн |
| 500+ | 12.92 грн |
| 1000+ | 11.59 грн |
| 2000+ | 10.48 грн |
| AON7400AL |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 15A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Description: MOSFET N-CH 30V 15A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
товару немає в наявності
В кошику
од. на суму грн.
| AON7400AL_101 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 15A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V
Description: MOSFET N-CH 30V 15A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| AON7400AL_102 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 15A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V
Description: MOSFET N-CH 30V 15A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| AON7400AL_103 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 15A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V
Description: MOSFET N-CH 30V 15A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| AON7400B |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 18A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V
Power Dissipation (Max): 4.1W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 15 V
Description: MOSFET N-CH 30V 18A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V
Power Dissipation (Max): 4.1W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| AON7400B_101 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 18A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V
Power Dissipation (Max): 4.1W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 15 V
Description: MOSFET N-CH 30V 18A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V
Power Dissipation (Max): 4.1W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| AON7401 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 12A/35A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V
Power Dissipation (Max): 3.1W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Description: MOSFET P-CH 30V 12A/35A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V
Power Dissipation (Max): 3.1W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
товару немає в наявності
В кошику
од. на суму грн.
| AON7401_101 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 12A/35A 8DFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V
Power Dissipation (Max): 3.1W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Description: MOSFET P-CH 30V 12A/35A 8DFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V
Power Dissipation (Max): 3.1W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| AON7401L |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 9A/20A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 20V
Power Dissipation (Max): 1.6W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Description: MOSFET P-CH 30V 9A/20A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 20V
Power Dissipation (Max): 1.6W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
товару немає в наявності
В кошику
од. на суму грн.
| AON7402 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 13.5A/39A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Description: MOSFET N-CH 30V 13.5A/39A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
товару немає в наявності
В кошику
од. на суму грн.
| AON7402_101 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 13.5A/39A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
Description: MOSFET N-CH 30V 13.5A/39A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| AON7402L |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 13.5A/39A 8DFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Description: MOSFET N-CH 30V 13.5A/39A 8DFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
товару немає в наявності
В кошику
од. на суму грн.
| AON7403 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 11A/29A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 15
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Description: MOSFET P-CH 30V 11A/29A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 15
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
товару немає в наявності
В кошику
од. на суму грн.
| AON7403 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 11A/29A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 15
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Description: MOSFET P-CH 30V 11A/29A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 15
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
товару немає в наявності
В кошику
од. на суму грн.
| AON7403L |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 8A/20A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Power Dissipation (Max): 1.6W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Description: MOSFET P-CH 30V 8A/20A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Power Dissipation (Max): 1.6W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
товару немає в наявності
В кошику
од. на суму грн.
| AON7403L_001 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 11A/29A 8DFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Power Dissipation (Max): 4.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Description: MOSFET P-CH 30V 11A/29A 8DFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Power Dissipation (Max): 4.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| AON7404 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 20A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 4.5V
Power Dissipation (Max): 3.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4630 pF @ 10 V
Description: MOSFET N-CH 20V 20A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 4.5V
Power Dissipation (Max): 3.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4630 pF @ 10 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 22.01 грн |
| AON7404 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 20A/40A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 4.5V
Power Dissipation (Max): 3.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4630 pF @ 10 V
Description: MOSFET N-CH 20V 20A/40A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 4.5V
Power Dissipation (Max): 3.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4630 pF @ 10 V
на замовлення 8812 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 90.86 грн |
| 10+ | 55.10 грн |
| 100+ | 36.36 грн |
| 500+ | 26.58 грн |
| 1000+ | 24.15 грн |
| 2000+ | 22.29 грн |
| AON7404G |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 20A/20A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 4.5V
Power Dissipation (Max): 5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V
Description: MOSFET N-CH 20V 20A/20A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 4.5V
Power Dissipation (Max): 5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V
на замовлення 3558 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 59.75 грн |
| 10+ | 35.39 грн |
| 100+ | 22.90 грн |
| 500+ | 16.44 грн |
| 1000+ | 14.82 грн |
| 2000+ | 13.45 грн |
| AON7404G |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 20A/20A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 4.5V
Power Dissipation (Max): 5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V
Description: MOSFET N-CH 20V 20A/20A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 4.5V
Power Dissipation (Max): 5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| AON7405 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 25A/50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Description: MOSFET P-CH 30V 25A/50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
товару немає в наявності
В кошику
од. на суму грн.
| AON7405_001 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 25A/50A 8DFN
Description: MOSFET P-CH 30V 25A/50A 8DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON7406 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 9A/25A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 3.1W (Ta), 15.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 15 V
Description: MOSFET N-CH 30V 9A/25A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 3.1W (Ta), 15.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 15 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 8.75 грн |
| 10000+ | 7.73 грн |
| 15000+ | 7.37 грн |
| AON7406 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 9A/25A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 3.1W (Ta), 15.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 15 V
Description: MOSFET N-CH 30V 9A/25A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 3.1W (Ta), 15.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 15 V
на замовлення 22218 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 41.75 грн |
| 13+ | 24.67 грн |
| 100+ | 15.71 грн |
| 500+ | 11.13 грн |
| 1000+ | 9.96 грн |
| 2000+ | 8.98 грн |
| AON7406L |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 8DFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: MOSFET N-CH 30V 8DFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| AON7407 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 14.5A/40A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 4.5V
Power Dissipation (Max): 3.1W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4195 pF @ 10 V
Description: MOSFET P-CH 20V 14.5A/40A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 4.5V
Power Dissipation (Max): 3.1W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4195 pF @ 10 V
на замовлення 9336 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 64.66 грн |
| 10+ | 38.47 грн |
| 100+ | 24.97 грн |
| 500+ | 17.99 грн |
| 1000+ | 16.23 грн |
| 2000+ | 14.76 грн |
| AON7407 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 14.5A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 4.5V
Power Dissipation (Max): 3.1W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4195 pF @ 10 V
Description: MOSFET P-CH 20V 14.5A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 4.5V
Power Dissipation (Max): 3.1W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4195 pF @ 10 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 14.56 грн |
| AON7408 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 10A/18A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 11W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Description: MOSFET N-CH 30V 10A/18A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 11W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
товару немає в наявності
В кошику
од. на суму грн.
| AON7408 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 10A/18A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 11W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Description: MOSFET N-CH 30V 10A/18A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 11W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
товару немає в наявності
В кошику
од. на суму грн.
| AON7408L |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 7.5A/20A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 20A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 9A, 10V
Power Dissipation (Max): 1.7W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Description: MOSFET N-CH 30V 7.5A/20A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 20A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 9A, 10V
Power Dissipation (Max): 1.7W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| AON7409 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 16A/32A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Description: MOSFET P-CH 30V 16A/32A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
товару немає в наявності
В кошику
од. на суму грн.
| AON7410 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 9.5A/24A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Description: MOSFET N-CH 30V 9.5A/24A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
на замовлення 240000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 6.95 грн |
| 10000+ | 6.13 грн |
| 15000+ | 5.96 грн |
| AON7410 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 9.5A/24A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Description: MOSFET N-CH 30V 9.5A/24A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
на замовлення 248937 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 39.29 грн |
| 14+ | 23.25 грн |
| 100+ | 14.77 грн |
| 500+ | 10.44 грн |
| 1000+ | 9.34 грн |
| 2000+ | 8.40 грн |
| AON7410_106 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 9.5A/24A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Description: MOSFET N-CH 30V 9.5A/24A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| AON7410L |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 8A/20A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 1.7W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Description: MOSFET N-CH 30V 8A/20A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 1.7W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| AON7410L_101 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 9.5A/24A 8DFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Description: MOSFET N-CH 30V 9.5A/24A 8DFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| AON7410L_105 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 8A/20A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 1.7W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Description: MOSFET N-CH 30V 8A/20A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 1.7W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| AON7412 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 10A/16A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 466 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Description: MOSFET N-CH 30V 10A/16A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 466 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
товару немає в наявності
В кошику
од. на суму грн.
| AON7412 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 10A/16A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 466 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Description: MOSFET N-CH 30V 10A/16A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 466 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
товару немає в наявності
В кошику
од. на суму грн.
| AON7414 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 12.5A/20A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Power Dissipation (Max): 4.1W (Ta), 15.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Description: MOSFET N-CH 30V 12.5A/20A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Power Dissipation (Max): 4.1W (Ta), 15.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
товару немає в наявності
В кошику
од. на суму грн.
| AON7416 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 14A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 1.7V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Description: MOSFET N-CH 30V 14A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 1.7V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
товару немає в наявності
В кошику
од. на суму грн.
| AON7416 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 14A/40A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 1.7V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Description: MOSFET N-CH 30V 14A/40A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 1.7V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
товару немає в наявності
В кошику
од. на суму грн.





