Продукція > ALPHA & OMEGA SEMICONDUCTOR INC. > Всі товари виробника ALPHA & OMEGA SEMICONDUCTOR INC. (3965) > Сторінка 31 з 67
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| AON6914 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| AON6916 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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AON6918 | Alpha & Omega Semiconductor Inc. |
 Description: MOSFET 2N-CH 25V 15A/26.5A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W, 2.2W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 15A, 26.5A Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 15V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN-EP (5x6) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| AON6920_001 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 5X6DFN |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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AON6922 | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2N-CH 25V 18A/31A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6924 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 15A/28A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W, 2.2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A, 28A Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 15V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN-EP (5x6) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6924 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 15A/28A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W, 2.2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A, 28A Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 15V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN-EP (5x6) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6926 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 11A/12A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W, 2.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A, 12A Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (5x6) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6928 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 17A/30A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6932 | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2N-CH 30V 22A/36A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6932 | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2N-CH 30V 22A/36A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6932A | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 22A/36A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6934 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 22A/30A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6934 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 22A/30A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6934A | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 22A/30A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6936 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 22A/40A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6936 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 22A/40A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6938 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 17A/33A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6938 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 17A/33A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6946 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 14A/18A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.5W, 3.9W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A, 18A Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V Rds On (Max) @ Id, Vgs: 11.6mOhm @ 13A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| AON6962 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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AON6970 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 24A/42A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 5W, 4.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 24A, 42A Input Capacitance (Ciss) (Max) @ Vds: 1171pF @ 15V Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6970_001 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6970_002 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6971 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 23A/40A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 5W, 4.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A, 40A Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6971 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 23A/40A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 5W, 4.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A, 40A Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6973A | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 22A/30A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6973A | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 22A/30A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6974 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 22A/30A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6974 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 22A/30A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6974A | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2N-CH 30V 22A/30A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6978 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 20A/28A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.6W, 4.3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A, 28A Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6978 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 20A/28A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.6W, 4.3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A, 28A Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6980 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 18A/27A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6980 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 18A/27A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| AON6982 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET Packaging: Bulk Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc), 85A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 15V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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AON6992 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 19A/31A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A, 31A Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6992 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 19A/31A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A, 31A Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Not For New Designs |
на замовлення 5595 шт: термін постачання 21-31 дні (днів) |
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AON6994 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 19A/26A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A, 26A Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6994 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 19A/26A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A, 26A Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Not For New Designs |
на замовлення 2706 шт: термін постачання 21-31 дні (днів) |
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AON6996 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 50A/60A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A, 60A Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6998 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 19A/26A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A, 26A Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON6998 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 19A/26A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A, 26A Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON7140 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CHANNEL 40V 50A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON7200 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 15.8A/40A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON7200 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 15.8A/40A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
AON7200_101 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 15.8A/40A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON7200_102 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 15.8A/40A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
AON7200L | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 15.8A/40A 8DFN Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON7202 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 20A/40A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON7202_101 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 20A/40A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON7202L | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 20A/40A 8DFN Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON7210 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 30A/50A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
AON7220 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 25V 37A/50A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON7230 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CHANNEL 100V 47A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 13A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON7232 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CHANNEL 100V 37A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 12A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON7240 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 19A/40A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 36.7W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON7240 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 19A/40A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 36.7W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON7240_101 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 19A/40A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
AON7242 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 30A/50A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2365 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. |
| AON6914 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH
Description: MOSFET N-CH
товару немає в наявності
В кошику
од. на суму грн.
| AON6916 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH
Description: MOSFET N-CH
товару немає в наявності
В кошику
од. на суму грн.
| AON6918 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 25V 15A/26.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W, 2.2W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 15A, 26.5A
Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 15V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (5x6)
Description: MOSFET 2N-CH 25V 15A/26.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W, 2.2W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 15A, 26.5A
Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 15V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (5x6)
товару немає в наявності
В кошику
од. на суму грн.
| AON6920_001 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 5X6DFN
Description: MOSFET 2N-CH 30V 5X6DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON6922 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 25V 18A/31A 8DFN
Description: MOSFET 2N-CH 25V 18A/31A 8DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON6924 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 15A/28A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W, 2.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A, 28A
Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 15V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (5x6)
Description: MOSFET 2N-CH 30V 15A/28A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W, 2.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A, 28A
Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 15V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (5x6)
товару немає в наявності
В кошику
од. на суму грн.
| AON6924 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 15A/28A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W, 2.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A, 28A
Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 15V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (5x6)
Description: MOSFET 2N-CH 30V 15A/28A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W, 2.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A, 28A
Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 15V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (5x6)
товару немає в наявності
В кошику
од. на суму грн.
| AON6926 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 11A/12A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W, 2.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A, 12A
Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET 2N-CH 30V 11A/12A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W, 2.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A, 12A
Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
товару немає в наявності
В кошику
од. на суму грн.
| AON6928 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 17A/30A 8DFN
Description: MOSFET 2N-CH 30V 17A/30A 8DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON6932 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 22A/36A 8DFN
Description: MOSFET 2N-CH 30V 22A/36A 8DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON6932 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 22A/36A 8DFN
Description: MOSFET 2N-CH 30V 22A/36A 8DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON6932A |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 22A/36A 8DFN
Description: MOSFET 2N-CH 30V 22A/36A 8DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON6934 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 22A/30A 8DFN
Description: MOSFET 2N-CH 30V 22A/30A 8DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON6934 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 22A/30A 8DFN
Description: MOSFET 2N-CH 30V 22A/30A 8DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON6934A |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 22A/30A 8DFN
Description: MOSFET 2N-CH 30V 22A/30A 8DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON6936 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 22A/40A 8DFN
Description: MOSFET 2N-CH 30V 22A/40A 8DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON6936 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 22A/40A 8DFN
Description: MOSFET 2N-CH 30V 22A/40A 8DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON6938 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 17A/33A 8DFN
Description: MOSFET 2N-CH 30V 17A/33A 8DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON6938 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 17A/33A 8DFN
Description: MOSFET 2N-CH 30V 17A/33A 8DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON6946 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 14A/18A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W, 3.9W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A, 18A
Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET 2N-CH 30V 14A/18A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W, 3.9W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A, 18A
Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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| AON6970 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 24A/42A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W, 4.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 24A, 42A
Input Capacitance (Ciss) (Max) @ Vds: 1171pF @ 15V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Obsolete
Description: MOSFET 2N-CH 30V 24A/42A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W, 4.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 24A, 42A
Input Capacitance (Ciss) (Max) @ Vds: 1171pF @ 15V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Obsolete
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| AON6970_001 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6)
Part Status: Obsolete
Description: MOSFET N-CH DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6)
Part Status: Obsolete
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| AON6970_002 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6)
Part Status: Obsolete
Description: MOSFET N-CH DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6)
Part Status: Obsolete
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| AON6971 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 23A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W, 4.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23A, 40A
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET 2N-CH 30V 23A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W, 4.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23A, 40A
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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| AON6971 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 23A/40A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W, 4.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23A, 40A
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET 2N-CH 30V 23A/40A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W, 4.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23A, 40A
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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| AON6973A |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 22A/30A 8DFN
Description: MOSFET 2N-CH 30V 22A/30A 8DFN
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| AON6973A |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 22A/30A 8DFN
Description: MOSFET 2N-CH 30V 22A/30A 8DFN
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| AON6974 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 22A/30A 8DFN
Description: MOSFET 2N-CH 30V 22A/30A 8DFN
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од. на суму грн.
| AON6974 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 22A/30A 8DFN
Description: MOSFET 2N-CH 30V 22A/30A 8DFN
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од. на суму грн.
| AON6974A |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 22A/30A 8DFN
Description: MOSFET 2N-CH 30V 22A/30A 8DFN
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В кошику
од. на суму грн.
| AON6978 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 20A/28A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.6W, 4.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A, 28A
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET 2N-CH 30V 20A/28A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.6W, 4.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A, 28A
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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| AON6978 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 20A/28A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.6W, 4.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A, 28A
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET 2N-CH 30V 20A/28A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.6W, 4.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A, 28A
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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| AON6980 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 18A/27A 8DFN
Description: MOSFET 2N-CH 30V 18A/27A 8DFN
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| AON6980 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 18A/27A 8DFN
Description: MOSFET 2N-CH 30V 18A/27A 8DFN
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од. на суму грн.
| AON6982 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 15V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 15V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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| AON6992 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 19A/31A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 19A, 31A
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Not For New Designs
Description: MOSFET 2N-CH 30V 19A/31A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 19A, 31A
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Not For New Designs
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| AON6992 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 19A/31A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 19A, 31A
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Not For New Designs
Description: MOSFET 2N-CH 30V 19A/31A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 19A, 31A
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Not For New Designs
на замовлення 5595 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 131.31 грн |
| 10+ | 80.01 грн |
| 100+ | 53.65 грн |
| 500+ | 39.72 грн |
| 1000+ | 36.30 грн |
| AON6994 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 19A/26A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 19A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Not For New Designs
Description: MOSFET 2N-CH 30V 19A/26A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 19A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Not For New Designs
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| AON6994 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 19A/26A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 19A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Not For New Designs
Description: MOSFET 2N-CH 30V 19A/26A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 19A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Not For New Designs
на замовлення 2706 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 117.78 грн |
| 10+ | 71.50 грн |
| 100+ | 47.73 грн |
| 500+ | 35.22 грн |
| 1000+ | 32.14 грн |
| AON6996 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 50A/60A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 50A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET 2N-CH 30V 50A/60A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 50A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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| AON6998 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 19A/26A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 19A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Not For New Designs
Description: MOSFET 2N-CH 30V 19A/26A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 19A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Not For New Designs
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| AON6998 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 19A/26A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 19A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Not For New Designs
Description: MOSFET 2N-CH 30V 19A/26A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 19A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Not For New Designs
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| AON7140 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CHANNEL 40V 50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 20 V
Description: MOSFET N-CHANNEL 40V 50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 20 V
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| AON7200 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 15.8A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Description: MOSFET N-CH 30V 15.8A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
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| AON7200 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 15.8A/40A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Description: MOSFET N-CH 30V 15.8A/40A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
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| AON7200_101 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 15.8A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Description: MOSFET N-CH 30V 15.8A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
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| AON7200_102 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 15.8A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Description: MOSFET N-CH 30V 15.8A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
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| AON7200L |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 15.8A/40A 8DFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Description: MOSFET N-CH 30V 15.8A/40A 8DFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
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| AON7202 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 20A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
Description: MOSFET N-CH 30V 20A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
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| AON7202_101 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 20A/40A 8DFN
Description: MOSFET N-CH 30V 20A/40A 8DFN
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| AON7202L |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 20A/40A 8DFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
Description: MOSFET N-CH 30V 20A/40A 8DFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
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| AON7210 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 30A/50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Description: MOSFET N-CH 30V 30A/50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
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| AON7220 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 25V 37A/50A 8DFN
Description: MOSFET N-CH 25V 37A/50A 8DFN
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| AON7230 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CHANNEL 100V 47A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 13A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 50 V
Description: MOSFET N-CHANNEL 100V 47A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 13A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 50 V
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| AON7232 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CHANNEL 100V 37A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 12A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 50 V
Description: MOSFET N-CHANNEL 100V 37A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 12A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 50 V
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| AON7240 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 19A/40A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 36.7W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 20 V
Description: MOSFET N-CH 40V 19A/40A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 36.7W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 20 V
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од. на суму грн.
| AON7240 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 19A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 36.7W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 20 V
Description: MOSFET N-CH 40V 19A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 36.7W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 20 V
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| AON7240_101 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 19A/40A 8DFN
Description: MOSFET N-CH 40V 19A/40A 8DFN
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од. на суму грн.
| AON7242 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 30A/50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2365 pF @ 20 V
Description: MOSFET N-CH 40V 30A/50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2365 pF @ 20 V
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од. на суму грн.