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AOT15S65L AOT15S65L Alpha & Omega Semiconductor Inc. AOT15S65L.pdf Description: MOSFET N-CH 650V 15A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 841 pF @ 100 V
на замовлення 71 шт:
термін постачання 21-31 дні (днів)
2+240.33 грн
10+159.47 грн
Мінімальне замовлення: 2
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AOT1606L AOT1606L Alpha & Omega Semiconductor Inc. AOSGreenPolicy.pdf Description: MOSFET N-CH 60V 12A/178A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 417W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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AOT1608L AOT1608L Alpha & Omega Semiconductor Inc. TO220.pdf Description: MOSFET N-CH 60V 11A/140A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3690 pF @ 25 V
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AOT160A60L AOT160A60L Alpha & Omega Semiconductor Inc. AOT160A60L.pdf Description: MOSFET N-CH 600V 24A TO220
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AOT16N50 AOT16N50 Alpha & Omega Semiconductor Inc. TO220.pdf Description: MOSFET N-CH 500V 16A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 370mOhm @ 8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2297 pF @ 25 V
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AOT190A60CL AOT190A60CL Alpha & Omega Semiconductor Inc. AOTF190A60CL.pdf Description: MOSFET N-CH 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
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AOT190A60L AOT190A60L Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH 600V TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 7.6A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
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AOT1N60 AOT1N60 Alpha & Omega Semiconductor Inc. TO220.pdf Description: MOSFET N-CH 600V 1.3A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 650mA, 10V
Power Dissipation (Max): 41.7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
на замовлення 855 шт:
термін постачання 21-31 дні (днів)
4+81.97 грн
50+36.54 грн
100+32.39 грн
500+23.53 грн
Мінімальне замовлення: 4
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AOT20B65M1 AOT20B65M1 Alpha & Omega Semiconductor Inc. AOT20B65M1.pdf Description: IGBT 650V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 322 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 26ns/122ns
Switching Energy: 470µJ (on), 270µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 46 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 227 W
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AOT20C60 AOT20C60 Alpha & Omega Semiconductor Inc. AOT20C60.pdf Description: MOSFET N-CH 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 100 V
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AOT20C60L AOT20C60L Alpha & Omega Semiconductor Inc. AOT20C60.pdf Description: MOSFET N-CH 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 100 V
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AOT20C60PL AOT20C60PL Alpha & Omega Semiconductor Inc. AOT20C60P.pdf Description: MOSFET N-CH 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3607 pF @ 100 V
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AOT20N25L AOT20N25L Alpha & Omega Semiconductor Inc. TO220.pdf Description: MOSFET N-CH 250V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1028 pF @ 25 V
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AOT20N60L AOT20N60L Alpha & Omega Semiconductor Inc. TO220.pdf Description: MOSFET N-CH 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 370mOhm @ 10A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
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AOT20S60L AOT20S60L Alpha & Omega Semiconductor Inc. TO220.pdf Description: MOSFET N-CH 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V
на замовлення 2002 шт:
термін постачання 21-31 дні (днів)
1+319.92 грн
50+157.62 грн
100+143.05 грн
500+110.29 грн
1000+102.60 грн
2000+99.76 грн
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AOT210L AOT210L Alpha & Omega Semiconductor Inc. AOSGreenPolicy.pdf Description: MOSFET N-CH 30V 20A/105A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta), 176W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
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AOT2140L AOT2140L Alpha & Omega Semiconductor Inc. AOT2140L.pdf Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 272W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9985 pF @ 20 V
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AOT2142L AOT2142L Alpha & Omega Semiconductor Inc. Description: MOSFET N-CHANNEL 40V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
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AOT2144L AOT2144L Alpha & Omega Semiconductor Inc. AOT2144L.pdf Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 205A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5225 pF @ 20 V
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AOT2146L AOT2146L Alpha & Omega Semiconductor Inc. AOT2146L.pdf Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 20 V
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AOT22N50L AOT22N50L Alpha & Omega Semiconductor Inc. TO220.pdf Description: MOSFET N-CH 500V 22A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 11A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 25 V
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AOT240L AOT240L Alpha & Omega Semiconductor Inc. TO220.pdf Description: MOSFET N-CH 40V 20A/105A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta), 176W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
на замовлення 1273 шт:
термін постачання 21-31 дні (днів)
2+203.73 грн
50+96.67 грн
100+86.98 грн
500+65.70 грн
1000+60.58 грн
Мінімальне замовлення: 2
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AOT2500L AOT2500L Alpha & Omega Semiconductor Inc. AOT2500L.pdf Description: MOSFET N-CH 150V 11.5/152A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 152A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 75 V
на замовлення 2624 шт:
термін постачання 21-31 дні (днів)
1+374.03 грн
50+187.19 грн
100+170.49 грн
500+132.58 грн
1000+124.38 грн
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AOT2502L AOT2502L Alpha & Omega Semiconductor Inc. AOT2502L.pdf Description: MOSFET N-CH 150V 18.5/106A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 277W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3010 pF @ 75 V
на замовлення 749 шт:
термін постачання 21-31 дні (днів)
2+284.10 грн
50+151.01 грн
100+138.53 грн
500+109.19 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AOT254L AOT254L Alpha & Omega Semiconductor Inc. AOT254L.pdf Description: MOSFET N-CH 150V 4.2A/32A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 75 V
товару немає в наявності
В кошику  од. на суму  грн.
AOT25S65L AOT25S65L Alpha & Omega Semiconductor Inc. TO220.pdf Description: MOSFET N-CH 650V 25A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 12.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1278 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
AOT2606L AOT2606L Alpha & Omega Semiconductor Inc. AOT2606L.pdf Description: MOSFET N-CH 60V 13A/72A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
AOT2608L AOT2608L Alpha & Omega Semiconductor Inc. AOT2608L.pdf Description: MOSFET N-CH 60V 11A/72A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2995 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
AOT260L AOT260L Alpha & Omega Semiconductor Inc. AOT260L.pdf Description: MOSFET N-CH 60V 20A/140A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta), 330W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 30 V
на замовлення 2036 шт:
термін постачання 21-31 дні (днів)
2+315.14 грн
50+155.00 грн
100+140.63 грн
500+108.35 грн
1000+100.76 грн
2000+97.71 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AOT2610L AOT2610L Alpha & Omega Semiconductor Inc. AOT2610L.pdf Description: MOSFET N-CH 60V 9A/55A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
AOT2618L AOT2618L Alpha & Omega Semiconductor Inc. AOT2618L.pdf Description: MOSFET N-CH 60V 7A/23A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 41.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
на замовлення 1595 шт:
термін постачання 21-31 дні (днів)
3+116.19 грн
50+53.06 грн
100+47.33 грн
500+34.98 грн
1000+31.95 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
AOT262L AOT262L Alpha & Omega Semiconductor Inc. AOT262L.pdf Description: MOSFET N-CH 60V 20A/140A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
AOT264L AOT264L Alpha & Omega Semiconductor Inc. AOT264L.pdf Description: MOSFET N-CH 60V 19A/140A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
AOT266L AOT266L Alpha & Omega Semiconductor Inc. AOT266L.pdf Description: MOSFET N-CH 60V 18A/140A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 268W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5650 pF @ 30 V
на замовлення 613 шт:
термін постачання 21-31 дні (днів)
2+230.78 грн
50+110.74 грн
100+99.94 грн
500+76.02 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AOT270AL AOT270AL Alpha & Omega Semiconductor Inc. AOT270AL.pdf Description: MOSFET N-CH 75V 21.5A/140A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10830 pF @ 37.5 V
товару немає в наявності
В кошику  од. на суму  грн.
AOT270L AOT270L Alpha & Omega Semiconductor Inc. TO220.pdf Description: MOSFET N-CH 75V 21.5A/140A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10350 pF @ 37.5 V
товару немає в наявності
В кошику  од. на суму  грн.
AOT27S60L AOT27S60L Alpha & Omega Semiconductor Inc. AOB27S60L.pdf Description: MOSFET N-CH 600V 27A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 13.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 100 V
на замовлення 3170 шт:
термін постачання 21-31 дні (днів)
2+289.67 грн
50+144.87 грн
100+131.87 грн
500+119.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AOT27S60L_001 Alpha & Omega Semiconductor Inc. Description: MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 13.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
AOT280A60L AOT280A60L Alpha & Omega Semiconductor Inc. AOT280A60L.pdf Description: MOSFET N-CH 600V 14A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
AOT280L AOT280L Alpha & Omega Semiconductor Inc. AOB280L.pdf Description: MOSFET N-CH 80V 20.5A/140A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.5A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11135 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
AOT282L AOT282L Alpha & Omega Semiconductor Inc. AOT282L.pdf Description: MOSFET N-CH 80V 18.5A/105A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 272.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7765 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
AOT284L AOT284L Alpha & Omega Semiconductor Inc. AOT284L.pdf Description: MOSFET N-CH 80V 16A/105A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5154 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
AOT286L AOT286L Alpha & Omega Semiconductor Inc. TO220.pdf Description: MOSFET N-CH 80V 13A/70A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3142 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
AOT288L AOT288L Alpha & Omega Semiconductor Inc. TO220.pdf Description: MOSFET N-CH 80V 10.5A/46A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 93.5W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
AOT2904 AOT2904 Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH 100V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7085 pF @ 50 V
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В кошику  од. на суму  грн.
AOT2906 AOT2906 Alpha & Omega Semiconductor Inc. AOB2906%2C_AOT2906.pdf Description: MOSFET N-CH 100V TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 122A (Tc)
Supplier Device Package: TO-220
товару немає в наявності
В кошику  од. на суму  грн.
AOT290L AOT290L Alpha & Omega Semiconductor Inc. AOT290L.pdf Description: MOSFET N-CH 100V 18A/140A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9550 pF @ 50 V
на замовлення 1912 шт:
термін постачання 21-31 дні (днів)
2+286.49 грн
50+142.61 грн
100+129.73 грн
500+116.22 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AOT2910L AOT2910L Alpha & Omega Semiconductor Inc. TO220.pdf Description: MOSFET N CH 100V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
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AOT2916L AOT2916L Alpha & Omega Semiconductor Inc. AOT2916L.pdf Description: MOSFET N CH 100V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V
Power Dissipation (Max): 2.1W (Ta), 41.5W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V
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AOT2918L AOT2918L Alpha & Omega Semiconductor Inc. AOT2918L.pdf Description: MOSFET N-CH 100V 13A/90A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 267W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 50 V
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AOT292L AOT292L Alpha & Omega Semiconductor Inc. TO220.pdf Description: MOSFET N-CH 100V 105A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 50 V
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AOT296L AOT296L Alpha & Omega Semiconductor Inc. AOT296L.pdf Description: MOSFET N-CH 100V 9.5A/70A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
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AOT298L AOT298L Alpha & Omega Semiconductor Inc. AOT298L.pdf Description: MOSFET N-CH 100V 9A/58A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 50 V
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AOT29S50L AOT29S50L Alpha & Omega Semiconductor Inc. TO220.pdf Description: MOSFET N-CH 500V 29A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 14.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 26.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 100 V
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AOT2N60 AOT2N60 Alpha & Omega Semiconductor Inc. TO220_Dwg.pdf Description: MOSFET N-CH 600V 2A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
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AOT360A70L AOT360A70L Alpha & Omega Semiconductor Inc. AOB360A70L.pdf Description: MOSFET N-CH 700V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 6A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V
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AOT380A60CL AOT380A60CL Alpha & Omega Semiconductor Inc. AOT380A60CL.pdf Description: MOSFET N-CH 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 100 V
на замовлення 975 шт:
термін постачання 21-31 дні (днів)
2+194.97 грн
50+92.04 грн
100+82.76 грн
500+62.38 грн
Мінімальне замовлення: 2
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AOT380A60L AOT380A60L Alpha & Omega Semiconductor Inc. AOT380A60L.pdf Description: MOSFET N-CH 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 100 V
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AOT3N100 AOT3N100 Alpha & Omega Semiconductor Inc. AOT3N100.pdf Description: MOSFET N-CH 1000V 2.8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 10V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
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AOT3N50 AOT3N50 Alpha & Omega Semiconductor Inc. AOT3N50,AOTF3N50.pdf Description: MOSFET N-CH 500V 3A TO220
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AOT15S65L AOT15S65L.pdf
AOT15S65L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 15A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 841 pF @ 100 V
на замовлення 71 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+240.33 грн
10+159.47 грн
Мінімальне замовлення: 2
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AOT1606L AOSGreenPolicy.pdf
AOT1606L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 12A/178A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 417W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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AOT1608L TO220.pdf
AOT1608L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 11A/140A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3690 pF @ 25 V
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AOT160A60L AOT160A60L.pdf
AOT160A60L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 24A TO220
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AOT16N50 TO220.pdf
AOT16N50
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 16A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 370mOhm @ 8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2297 pF @ 25 V
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AOT190A60CL AOTF190A60CL.pdf
AOT190A60CL
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
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AOT190A60L
AOT190A60L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 7.6A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
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AOT1N60 TO220.pdf
AOT1N60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 1.3A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 650mA, 10V
Power Dissipation (Max): 41.7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
на замовлення 855 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+81.97 грн
50+36.54 грн
100+32.39 грн
500+23.53 грн
Мінімальне замовлення: 4
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AOT20B65M1 AOT20B65M1.pdf
AOT20B65M1
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 322 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 26ns/122ns
Switching Energy: 470µJ (on), 270µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 46 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 227 W
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AOT20C60 AOT20C60.pdf
AOT20C60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 100 V
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AOT20C60L AOT20C60.pdf
AOT20C60L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 100 V
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AOT20C60PL AOT20C60P.pdf
AOT20C60PL
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3607 pF @ 100 V
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AOT20N25L TO220.pdf
AOT20N25L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 250V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1028 pF @ 25 V
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AOT20N60L TO220.pdf
AOT20N60L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 370mOhm @ 10A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
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AOT20S60L TO220.pdf
AOT20S60L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V
на замовлення 2002 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+319.92 грн
50+157.62 грн
100+143.05 грн
500+110.29 грн
1000+102.60 грн
2000+99.76 грн
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AOT210L AOSGreenPolicy.pdf
AOT210L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 20A/105A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta), 176W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
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AOT2140L AOT2140L.pdf
AOT2140L
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 272W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9985 pF @ 20 V
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AOT2142L
AOT2142L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CHANNEL 40V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
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AOT2144L AOT2144L.pdf
AOT2144L
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 205A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5225 pF @ 20 V
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AOT2146L AOT2146L.pdf
AOT2146L
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 20 V
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AOT22N50L TO220.pdf
AOT22N50L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 22A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 11A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 25 V
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AOT240L TO220.pdf
AOT240L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 20A/105A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta), 176W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
на замовлення 1273 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+203.73 грн
50+96.67 грн
100+86.98 грн
500+65.70 грн
1000+60.58 грн
Мінімальне замовлення: 2
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AOT2500L AOT2500L.pdf
AOT2500L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 150V 11.5/152A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 152A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 75 V
на замовлення 2624 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+374.03 грн
50+187.19 грн
100+170.49 грн
500+132.58 грн
1000+124.38 грн
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AOT2502L AOT2502L.pdf
AOT2502L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 150V 18.5/106A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 277W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3010 pF @ 75 V
на замовлення 749 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+284.10 грн
50+151.01 грн
100+138.53 грн
500+109.19 грн
Мінімальне замовлення: 2
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AOT254L AOT254L.pdf
AOT254L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 150V 4.2A/32A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 75 V
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AOT25S65L TO220.pdf
AOT25S65L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 25A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 12.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1278 pF @ 100 V
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AOT2606L AOT2606L.pdf
AOT2606L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 13A/72A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 30 V
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AOT2608L AOT2608L.pdf
AOT2608L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 11A/72A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2995 pF @ 30 V
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AOT260L AOT260L.pdf
AOT260L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 20A/140A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta), 330W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 30 V
на замовлення 2036 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+315.14 грн
50+155.00 грн
100+140.63 грн
500+108.35 грн
1000+100.76 грн
2000+97.71 грн
Мінімальне замовлення: 2
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AOT2610L AOT2610L.pdf
AOT2610L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 9A/55A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 30 V
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AOT2618L AOT2618L.pdf
AOT2618L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 7A/23A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 41.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
на замовлення 1595 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+116.19 грн
50+53.06 грн
100+47.33 грн
500+34.98 грн
1000+31.95 грн
Мінімальне замовлення: 3
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AOT262L AOT262L.pdf
AOT262L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 20A/140A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 30 V
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AOT264L AOT264L.pdf
AOT264L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 19A/140A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
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AOT266L AOT266L.pdf
AOT266L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 18A/140A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 268W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5650 pF @ 30 V
на замовлення 613 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+230.78 грн
50+110.74 грн
100+99.94 грн
500+76.02 грн
Мінімальне замовлення: 2
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AOT270AL AOT270AL.pdf
AOT270AL
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 75V 21.5A/140A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10830 pF @ 37.5 V
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AOT270L TO220.pdf
AOT270L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 75V 21.5A/140A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10350 pF @ 37.5 V
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AOT27S60L AOB27S60L.pdf
AOT27S60L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 27A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 13.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 100 V
на замовлення 3170 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+289.67 грн
50+144.87 грн
100+131.87 грн
500+119.41 грн
Мінімальне замовлення: 2
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AOT27S60L_001
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 13.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 100 V
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AOT280A60L AOT280A60L.pdf
AOT280A60L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 14A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
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AOT280L AOB280L.pdf
AOT280L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 80V 20.5A/140A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.5A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11135 pF @ 40 V
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AOT282L AOT282L.pdf
AOT282L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 80V 18.5A/105A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 272.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7765 pF @ 40 V
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AOT284L AOT284L.pdf
AOT284L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 80V 16A/105A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5154 pF @ 40 V
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AOT286L TO220.pdf
AOT286L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 80V 13A/70A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3142 pF @ 40 V
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AOT288L TO220.pdf
AOT288L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 80V 10.5A/46A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 93.5W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 40 V
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AOT2904
AOT2904
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7085 pF @ 50 V
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AOT2906 AOB2906%2C_AOT2906.pdf
AOT2906
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 122A (Tc)
Supplier Device Package: TO-220
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AOT290L AOT290L.pdf
AOT290L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 18A/140A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9550 pF @ 50 V
на замовлення 1912 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+286.49 грн
50+142.61 грн
100+129.73 грн
500+116.22 грн
Мінімальне замовлення: 2
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AOT2910L TO220.pdf
AOT2910L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N CH 100V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
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AOT2916L AOT2916L.pdf
AOT2916L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N CH 100V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V
Power Dissipation (Max): 2.1W (Ta), 41.5W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V
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AOT2918L AOT2918L.pdf
AOT2918L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 13A/90A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 267W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 50 V
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AOT292L TO220.pdf
AOT292L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 105A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 50 V
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AOT296L AOT296L.pdf
AOT296L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 9.5A/70A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
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AOT298L AOT298L.pdf
AOT298L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 9A/58A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 50 V
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AOT29S50L TO220.pdf
AOT29S50L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 29A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 14.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 26.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 100 V
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AOT2N60 TO220_Dwg.pdf
AOT2N60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 2A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
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AOT360A70L AOB360A70L.pdf
AOT360A70L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 6A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V
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AOT380A60CL AOT380A60CL.pdf
AOT380A60CL
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 100 V
на замовлення 975 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+194.97 грн
50+92.04 грн
100+82.76 грн
500+62.38 грн
Мінімальне замовлення: 2
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AOT380A60L AOT380A60L.pdf
AOT380A60L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 100 V
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AOT3N100 AOT3N100.pdf
AOT3N100
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 1000V 2.8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 10V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
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AOT3N50 AOT3N50,AOTF3N50.pdf
AOT3N50
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 3A TO220
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