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AOSN32338C AOSN32338C Alpha & Omega Semiconductor Inc. AOSN32338C.pdf Description: MOSFET N-CH 30V 3.7A SC70-3
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: SC-70-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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AOSP21307 AOSP21307 Alpha & Omega Semiconductor Inc. AOSP21307.pdf Description: MOSFET P-CH 30V 14A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1995 pF @ 15 V
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AOSP21311C AOSP21311C Alpha & Omega Semiconductor Inc. AOSP21311C.pdf Description: MOSFET P-CH 30V 6A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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AOSP21313C AOSP21313C Alpha & Omega Semiconductor Inc. AOSP21313C.pdf Description: MOSFET P-CH 30V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+18.96 грн
6000+16.85 грн
9000+16.13 грн
15000+14.38 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AOSP21313C AOSP21313C Alpha & Omega Semiconductor Inc. AOSP21313C.pdf Description: MOSFET P-CH 30V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
на замовлення 17957 шт:
термін постачання 21-31 дні (днів)
5+76.67 грн
10+45.95 грн
100+30.09 грн
500+21.82 грн
1000+19.76 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
AOSP21321 AOSP21321 Alpha & Omega Semiconductor Inc. AOSP21321.pdf Description: MOSFET P-CH 30V 11A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 15 V
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AOSP21321 AOSP21321 Alpha & Omega Semiconductor Inc. AOSP21321.pdf Description: MOSFET P-CH 30V 11A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 15 V
на замовлення 2830 шт:
термін постачання 21-31 дні (днів)
7+50.07 грн
10+30.21 грн
100+19.50 грн
500+13.95 грн
1000+12.55 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
AOSP21357 AOSP21357 Alpha & Omega Semiconductor Inc. AOSP21357.pdf Description: MOSFET P-CH 30V 16A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
на замовлення 1736 шт:
термін постачання 21-31 дні (днів)
3+134.56 грн
10+82.19 грн
100+55.35 грн
500+41.15 грн
1000+37.67 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
AOSP21357 AOSP21357 Alpha & Omega Semiconductor Inc. AOSP21357.pdf Description: MOSFET P-CH 30V 16A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
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AOSP32314 AOSP32314 Alpha & Omega Semiconductor Inc. AOSP32314.pdf Description: MOSFET N-CH 30V 14.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 15 V
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AOSP32314 AOSP32314 Alpha & Omega Semiconductor Inc. AOSP32314.pdf Description: MOSFET N-CH 30V 14.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 15 V
на замовлення 968 шт:
термін постачання 21-31 дні (днів)
5+69.63 грн
10+41.96 грн
100+27.44 грн
500+19.89 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
AOSP32320C AOSP32320C Alpha & Omega Semiconductor Inc. AOSP32320C.pdf Description: MOSFET N-CH 30V 8.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
на замовлення 7566 шт:
термін постачання 21-31 дні (днів)
6+61.02 грн
10+36.61 грн
100+23.75 грн
500+17.07 грн
1000+15.39 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
AOSP32320C AOSP32320C Alpha & Omega Semiconductor Inc. AOSP32320C.pdf Description: MOSFET N-CH 30V 8.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+14.66 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AOSP32368 AOSP32368 Alpha & Omega Semiconductor Inc. AOSP32368.pdf Description: MOSFET N-CH 30V 16A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
на замовлення 3122 шт:
термін постачання 21-31 дні (днів)
6+57.89 грн
10+34.58 грн
100+22.40 грн
500+16.11 грн
1000+14.53 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
AOSP32368 AOSP32368 Alpha & Omega Semiconductor Inc. AOSP32368.pdf Description: MOSFET N-CH 30V 16A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+13.85 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AOSP36326C AOSP36326C Alpha & Omega Semiconductor Inc. AOSP36326C.pdf Description: MOSFET N-CH 30V 12A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 542 pF @ 15 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
3000+11.01 грн
6000+9.71 грн
9000+9.25 грн
15000+8.20 грн
21000+7.91 грн
30000+7.63 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AOSP36326C AOSP36326C Alpha & Omega Semiconductor Inc. AOSP36326C.pdf Description: MOSFET N-CH 30V 12A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 542 pF @ 15 V
на замовлення 30957 шт:
термін постачання 21-31 дні (днів)
7+46.94 грн
11+28.25 грн
100+18.14 грн
500+12.94 грн
1000+11.63 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
AOSP62530 AOSP62530 Alpha & Omega Semiconductor Inc. AOSP62530.pdf Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 63mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 75 V
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AOSP62626E AOSP62626E Alpha & Omega Semiconductor Inc. Description: N
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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AOSP66406 AOSP66406 Alpha & Omega Semiconductor Inc. AOSP66406.pdf Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 17A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V
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AOSP66919 AOSP66919 Alpha & Omega Semiconductor Inc. Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
AOSP66920 AOSP66920 Alpha & Omega Semiconductor Inc. AOSP66920.pdf Description: MOSFET N-CH 100V 13.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+34.05 грн
6000+30.59 грн
9000+30.55 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AOSP66920 AOSP66920 Alpha & Omega Semiconductor Inc. AOSP66920.pdf Description: MOSFET N-CH 100V 13.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
на замовлення 9582 шт:
термін постачання 21-31 дні (днів)
3+124.39 грн
10+76.32 грн
100+51.31 грн
500+38.11 грн
1000+35.10 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
AOSP66923 AOSP66923 Alpha & Omega Semiconductor Inc. AOSP66923.pdf Description: MOSFET N-CH 100V 12A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
AOSP66923 AOSP66923 Alpha & Omega Semiconductor Inc. AOSP66923.pdf Description: MOSFET N-CH 100V 12A 8SOIC
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
на замовлення 3280 шт:
термін постачання 21-31 дні (днів)
4+97.79 грн
10+59.74 грн
100+39.73 грн
500+29.22 грн
1000+26.63 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
AOSP66925 AOSP66925 Alpha & Omega Semiconductor Inc. Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
AOSS21115C AOSS21115C Alpha & Omega Semiconductor Inc. combine-support-documents?resources=2436,4628,4799,6845,6997 Description: MOSFET P-CH 20V 4.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+7.11 грн
6000+6.22 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AOSS21115C AOSS21115C Alpha & Omega Semiconductor Inc. combine-support-documents?resources=2436,4628,4799,6845,6997 Description: MOSFET P-CH 20V 4.5A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, SOT-23-3 Variant
Packaging: Cut Tape (CT)
на замовлення 8406 шт:
термін постачання 21-31 дні (днів)
10+32.08 грн
16+19.06 грн
100+12.11 грн
500+8.51 грн
1000+7.59 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
AOSS21311C AOSS21311C Alpha & Omega Semiconductor Inc. AOSS21311C.pdf Description: MOSFET P-CH 30V 4.3A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, SOT-23-3 Variant
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
AOSS21311C AOSS21311C Alpha & Omega Semiconductor Inc. AOSS21311C.pdf Description: MOSFET P-CH 30V 4.3A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, SOT-23-3 Variant
Packaging: Cut Tape (CT)
на замовлення 885 шт:
термін постачання 21-31 дні (днів)
11+30.51 грн
17+18.08 грн
100+11.47 грн
500+8.06 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
AOSS21319C AOSS21319C Alpha & Omega Semiconductor Inc. AOSS21319C.pdf Description: MOSFET P-CH 30V 2.8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, SOT-23-3 Variant
Packaging: Tape & Reel (TR)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+5.90 грн
6000+5.14 грн
9000+4.87 грн
15000+4.28 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AOSS21319C AOSS21319C Alpha & Omega Semiconductor Inc. AOSS21319C.pdf Description: MOSFET P-CH 30V 2.8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, SOT-23-3 Variant
Packaging: Cut Tape (CT)
на замовлення 15822 шт:
термін постачання 21-31 дні (днів)
12+27.38 грн
19+16.20 грн
100+10.19 грн
500+7.12 грн
1000+6.33 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
AOSS32136C AOSS32136C Alpha & Omega Semiconductor Inc. AOSS32136C.pdf Description: MOSFET N-CH 20V 6.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
на замовлення 42000 шт:
термін постачання 21-31 дні (днів)
3000+8.00 грн
6000+7.00 грн
9000+6.65 грн
15000+5.86 грн
21000+5.64 грн
30000+5.42 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AOSS32136C AOSS32136C Alpha & Omega Semiconductor Inc. AOSS32136C.pdf Description: MOSFET N-CH 20V 6.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
на замовлення 42485 шт:
термін постачання 21-31 дні (днів)
9+35.99 грн
15+21.40 грн
100+13.58 грн
500+9.56 грн
1000+8.54 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
AOSS32334C AOSS32334C Alpha & Omega Semiconductor Inc. AOSS32334C.pdf Description: MOSFET N-CH 30V 6.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.2A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
3000+7.27 грн
6000+6.35 грн
9000+6.02 грн
15000+5.30 грн
21000+5.09 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AOSS32334C AOSS32334C Alpha & Omega Semiconductor Inc. AOSS32334C.pdf Description: MOSFET N-CH 30V 6.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.2A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
на замовлення 25793 шт:
термін постачання 21-31 дні (днів)
10+32.86 грн
16+19.59 грн
100+12.42 грн
500+8.72 грн
1000+7.77 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
AOSS32338C AOSS32338C Alpha & Omega Semiconductor Inc. AOSS32338C.pdf Description: MOSFET N-CH 30V 4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
на замовлення 30705 шт:
термін постачання 21-31 дні (днів)
3000+6.51 грн
6000+5.68 грн
9000+5.38 грн
15000+4.73 грн
21000+4.54 грн
30000+4.36 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AOSS32338C AOSS32338C Alpha & Omega Semiconductor Inc. AOSS32338C.pdf Description: MOSFET N-CH 30V 4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
на замовлення 33156 шт:
термін постачання 21-31 дні (днів)
11+29.73 грн
17+17.78 грн
100+11.22 грн
500+7.85 грн
1000+6.99 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
AOSS62934 AOSS62934 Alpha & Omega Semiconductor Inc. AOSS62934.pdf Description: MOSFET N-CH 100V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 50 V
на замовлення 102346 шт:
термін постачання 21-31 дні (днів)
8+43.81 грн
12+25.92 грн
100+16.59 грн
500+11.77 грн
1000+10.54 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
AOSS62934 AOSS62934 Alpha & Omega Semiconductor Inc. AOSS62934.pdf Description: MOSFET N-CH 100V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 50 V
на замовлення 102000 шт:
термін постачання 21-31 дні (днів)
3000+9.94 грн
6000+8.74 грн
9000+8.31 грн
15000+7.35 грн
21000+7.08 грн
30000+6.82 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AOSX21319C AOSX21319C Alpha & Omega Semiconductor Inc. Description: MOSFET P-CH 30V 2.6A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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AOSX32128 Alpha & Omega Semiconductor Inc. Description: SINGLE
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V
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AOT095A60L AOT095A60L Alpha & Omega Semiconductor Inc. AOTF095A60L.pdf Description: MOSFET N-CH 600V 38A TO220
Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 378W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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AOT10B60D AOT10B60D Alpha & Omega Semiconductor Inc. TO220.pdf Description: IGBT 600V 20A TO-220
Test Condition: 400V, 10A, 30Ohm, 15V
Switching Energy: 260µJ (on), 70µJ (off)
Td (on/off) @ 25°C: 10ns/72ns
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A
Reverse Recovery Time (trr): 105 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 163 W
Current - Collector Pulsed (Icm): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Part Status: Not For New Designs
Gate Charge: 17.4 nC
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AOT10B60M1 AOT10B60M1 Alpha & Omega Semiconductor Inc. Description: IGBT 600V 20A TO-220
Td (on/off) @ 25°C: 5.5ns/61ns
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 10A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tape & Reel (TR)
Power - Max: 83 W
Current - Collector Pulsed (Icm): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Part Status: Active
Gate Charge: 14 nC
Test Condition: 400V, 10A, 30Ohm, 15V
Switching Energy: 190µJ (on), 140µJ (off)
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AOT10B65M1 AOT10B65M1 Alpha & Omega Semiconductor Inc. AOB10B65M1.pdf Description: IGBT 650V 10A TO220
Td (on/off) @ 25°C: 12ns/91ns
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Reverse Recovery Time (trr): 262 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 150 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 20 A
Part Status: Active
Gate Charge: 24 nC
Test Condition: 400V, 10A, 30Ohm, 15V
Switching Energy: 180µJ (on), 130µJ (off)
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
3+139.26 грн
10+111.12 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
AOT10B65M2 AOT10B65M2 Alpha & Omega Semiconductor Inc. AOT10B65M2.pdf Description: IGBT 650V 10A TO220
Power - Max: 150 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 20 A
Part Status: Active
Gate Charge: 24 nC
Test Condition: 400V, 10A, 30Ohm, 15V
Switching Energy: 180µJ (on), 130µJ (off)
Td (on/off) @ 25°C: 12ns/91ns
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Reverse Recovery Time (trr): 262 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 737 шт:
термін постачання 21-31 дні (днів)
3+141.60 грн
10+113.53 грн
100+90.36 грн
500+71.75 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
AOT10B65MQ2 Alpha & Omega Semiconductor Inc. AOT10B65MQ2.pdf Description: IGBT 10A
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 106 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 12ns/91ns
Switching Energy: 180µJ (on), 130µJ (off)
Test Condition: 400V, 10A, 30Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 150 W
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AOT10N60 AOT10N60 Alpha & Omega Semiconductor Inc. AOT10N60.pdf Description: MOSFET N-CH 600V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
на замовлення 488 шт:
термін постачання 21-31 дні (днів)
2+177.59 грн
50+83.77 грн
100+75.28 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AOT10N60_001 AOT10N60_001 Alpha & Omega Semiconductor Inc. AOT10N60.pdf Description: MOSFET N-CH 600V 10A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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AOT10N60CL Alpha & Omega Semiconductor Inc. Description: N
Packaging: Tape & Reel (TR)
Part Status: Last Time Buy
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В кошику  од. на суму  грн.
AOT10N60L AOT10N60L Alpha & Omega Semiconductor Inc. AOT10N60.pdf Description: MOSFET N-CHANNEL 600V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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AOT10N65 AOT10N65 Alpha & Omega Semiconductor Inc. TO220.pdf Description: MOSFET N-CH 650V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 25 V
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AOT10T60L AOT10T60L Alpha & Omega Semiconductor Inc. AOTF10T60.pdf Description: MOSFET N-CH 600V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 100 V
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AOT10T60P AOT10T60P Alpha & Omega Semiconductor Inc. AOT10T60P.pdf Description: MOSFET N-CHANNEL 600V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 100 V
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AOT10T60PL AOT10T60PL Alpha & Omega Semiconductor Inc. AOT10T60P.pdf Description: MOSFET N-CH 600V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 100 V
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AOT1100L AOT1100L Alpha & Omega Semiconductor Inc. AOT1100L.pdf Description: MOSFET N-CH 100V 8A/130A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4833 pF @ 25 V
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AOT11C60 AOT11C60 Alpha & Omega Semiconductor Inc. AOT11C60.pdf Description: MOSFET N-CHANNEL 600V 11A TO220
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AOT11C60L AOT11C60L Alpha & Omega Semiconductor Inc. AOB11C60.pdf Description: MOSFET N-CH 600V 11A TO220
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AOT11C60PL AOT11C60PL Alpha & Omega Semiconductor Inc. AOT11C60P.pdf Description: MOSFET N-CH 600V 11A TO220
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AOSN32338C AOSN32338C.pdf
AOSN32338C
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 3.7A SC70-3
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: SC-70-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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AOSP21307 AOSP21307.pdf
AOSP21307
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 14A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1995 pF @ 15 V
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AOSP21311C AOSP21311C.pdf
AOSP21311C
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 6A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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AOSP21313C AOSP21313C.pdf
AOSP21313C
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+18.96 грн
6000+16.85 грн
9000+16.13 грн
15000+14.38 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AOSP21313C AOSP21313C.pdf
AOSP21313C
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
на замовлення 17957 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+76.67 грн
10+45.95 грн
100+30.09 грн
500+21.82 грн
1000+19.76 грн
Мінімальне замовлення: 5
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AOSP21321 AOSP21321.pdf
AOSP21321
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 11A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 15 V
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AOSP21321 AOSP21321.pdf
AOSP21321
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 11A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 15 V
на замовлення 2830 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+50.07 грн
10+30.21 грн
100+19.50 грн
500+13.95 грн
1000+12.55 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
AOSP21357 AOSP21357.pdf
AOSP21357
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 16A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
на замовлення 1736 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+134.56 грн
10+82.19 грн
100+55.35 грн
500+41.15 грн
1000+37.67 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
AOSP21357 AOSP21357.pdf
AOSP21357
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 16A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
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AOSP32314 AOSP32314.pdf
AOSP32314
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 14.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 15 V
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AOSP32314 AOSP32314.pdf
AOSP32314
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 14.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 15 V
на замовлення 968 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+69.63 грн
10+41.96 грн
100+27.44 грн
500+19.89 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
AOSP32320C AOSP32320C.pdf
AOSP32320C
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 8.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
на замовлення 7566 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+61.02 грн
10+36.61 грн
100+23.75 грн
500+17.07 грн
1000+15.39 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
AOSP32320C AOSP32320C.pdf
AOSP32320C
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 8.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+14.66 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AOSP32368 AOSP32368.pdf
AOSP32368
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 16A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
на замовлення 3122 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+57.89 грн
10+34.58 грн
100+22.40 грн
500+16.11 грн
1000+14.53 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
AOSP32368 AOSP32368.pdf
AOSP32368
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 16A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+13.85 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AOSP36326C AOSP36326C.pdf
AOSP36326C
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 12A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 542 pF @ 15 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+11.01 грн
6000+9.71 грн
9000+9.25 грн
15000+8.20 грн
21000+7.91 грн
30000+7.63 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AOSP36326C AOSP36326C.pdf
AOSP36326C
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 12A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 542 pF @ 15 V
на замовлення 30957 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+46.94 грн
11+28.25 грн
100+18.14 грн
500+12.94 грн
1000+11.63 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
AOSP62530 AOSP62530.pdf
AOSP62530
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 63mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 75 V
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AOSP62626E
AOSP62626E
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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AOSP66406 AOSP66406.pdf
AOSP66406
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 17A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V
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AOSP66919
AOSP66919
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V
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AOSP66920 AOSP66920.pdf
AOSP66920
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 13.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+34.05 грн
6000+30.59 грн
9000+30.55 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AOSP66920 AOSP66920.pdf
AOSP66920
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 13.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
на замовлення 9582 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+124.39 грн
10+76.32 грн
100+51.31 грн
500+38.11 грн
1000+35.10 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
AOSP66923 AOSP66923.pdf
AOSP66923
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 12A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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AOSP66923 AOSP66923.pdf
AOSP66923
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 12A 8SOIC
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
на замовлення 3280 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+97.79 грн
10+59.74 грн
100+39.73 грн
500+29.22 грн
1000+26.63 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
AOSP66925
AOSP66925
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 50 V
товару немає в наявності
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AOSS21115C combine-support-documents?resources=2436,4628,4799,6845,6997
AOSS21115C
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 4.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+7.11 грн
6000+6.22 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AOSS21115C combine-support-documents?resources=2436,4628,4799,6845,6997
AOSS21115C
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 4.5A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, SOT-23-3 Variant
Packaging: Cut Tape (CT)
на замовлення 8406 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+32.08 грн
16+19.06 грн
100+12.11 грн
500+8.51 грн
1000+7.59 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
AOSS21311C AOSS21311C.pdf
AOSS21311C
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 4.3A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, SOT-23-3 Variant
Packaging: Tape & Reel (TR)
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В кошику  од. на суму  грн.
AOSS21311C AOSS21311C.pdf
AOSS21311C
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 4.3A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, SOT-23-3 Variant
Packaging: Cut Tape (CT)
на замовлення 885 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+30.51 грн
17+18.08 грн
100+11.47 грн
500+8.06 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
AOSS21319C AOSS21319C.pdf
AOSS21319C
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 2.8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, SOT-23-3 Variant
Packaging: Tape & Reel (TR)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+5.90 грн
6000+5.14 грн
9000+4.87 грн
15000+4.28 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AOSS21319C AOSS21319C.pdf
AOSS21319C
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 2.8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, SOT-23-3 Variant
Packaging: Cut Tape (CT)
на замовлення 15822 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+27.38 грн
19+16.20 грн
100+10.19 грн
500+7.12 грн
1000+6.33 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
AOSS32136C AOSS32136C.pdf
AOSS32136C
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 6.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
на замовлення 42000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+8.00 грн
6000+7.00 грн
9000+6.65 грн
15000+5.86 грн
21000+5.64 грн
30000+5.42 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AOSS32136C AOSS32136C.pdf
AOSS32136C
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 6.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
на замовлення 42485 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+35.99 грн
15+21.40 грн
100+13.58 грн
500+9.56 грн
1000+8.54 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
AOSS32334C AOSS32334C.pdf
AOSS32334C
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 6.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.2A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+7.27 грн
6000+6.35 грн
9000+6.02 грн
15000+5.30 грн
21000+5.09 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AOSS32334C AOSS32334C.pdf
AOSS32334C
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 6.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.2A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
на замовлення 25793 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+32.86 грн
16+19.59 грн
100+12.42 грн
500+8.72 грн
1000+7.77 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
AOSS32338C AOSS32338C.pdf
AOSS32338C
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
на замовлення 30705 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+6.51 грн
6000+5.68 грн
9000+5.38 грн
15000+4.73 грн
21000+4.54 грн
30000+4.36 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AOSS32338C AOSS32338C.pdf
AOSS32338C
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
на замовлення 33156 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+29.73 грн
17+17.78 грн
100+11.22 грн
500+7.85 грн
1000+6.99 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
AOSS62934 AOSS62934.pdf
AOSS62934
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 50 V
на замовлення 102346 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+43.81 грн
12+25.92 грн
100+16.59 грн
500+11.77 грн
1000+10.54 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
AOSS62934 AOSS62934.pdf
AOSS62934
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 50 V
на замовлення 102000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+9.94 грн
6000+8.74 грн
9000+8.31 грн
15000+7.35 грн
21000+7.08 грн
30000+6.82 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AOSX21319C
AOSX21319C
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 2.6A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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AOSX32128
Виробник: Alpha & Omega Semiconductor Inc.
Description: SINGLE
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V
товару немає в наявності
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AOT095A60L AOTF095A60L.pdf
AOT095A60L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 38A TO220
Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 378W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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AOT10B60D TO220.pdf
AOT10B60D
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 600V 20A TO-220
Test Condition: 400V, 10A, 30Ohm, 15V
Switching Energy: 260µJ (on), 70µJ (off)
Td (on/off) @ 25°C: 10ns/72ns
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A
Reverse Recovery Time (trr): 105 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 163 W
Current - Collector Pulsed (Icm): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Part Status: Not For New Designs
Gate Charge: 17.4 nC
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AOT10B60M1
AOT10B60M1
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 600V 20A TO-220
Td (on/off) @ 25°C: 5.5ns/61ns
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 10A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tape & Reel (TR)
Power - Max: 83 W
Current - Collector Pulsed (Icm): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Part Status: Active
Gate Charge: 14 nC
Test Condition: 400V, 10A, 30Ohm, 15V
Switching Energy: 190µJ (on), 140µJ (off)
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AOT10B65M1 AOB10B65M1.pdf
AOT10B65M1
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 10A TO220
Td (on/off) @ 25°C: 12ns/91ns
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Reverse Recovery Time (trr): 262 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 150 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 20 A
Part Status: Active
Gate Charge: 24 nC
Test Condition: 400V, 10A, 30Ohm, 15V
Switching Energy: 180µJ (on), 130µJ (off)
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+139.26 грн
10+111.12 грн
Мінімальне замовлення: 3
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AOT10B65M2 AOT10B65M2.pdf
AOT10B65M2
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 10A TO220
Power - Max: 150 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 20 A
Part Status: Active
Gate Charge: 24 nC
Test Condition: 400V, 10A, 30Ohm, 15V
Switching Energy: 180µJ (on), 130µJ (off)
Td (on/off) @ 25°C: 12ns/91ns
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Reverse Recovery Time (trr): 262 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 737 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+141.60 грн
10+113.53 грн
100+90.36 грн
500+71.75 грн
Мінімальне замовлення: 3
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AOT10B65MQ2 AOT10B65MQ2.pdf
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 10A
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 106 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 12ns/91ns
Switching Energy: 180µJ (on), 130µJ (off)
Test Condition: 400V, 10A, 30Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 150 W
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AOT10N60 AOT10N60.pdf
AOT10N60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
на замовлення 488 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+177.59 грн
50+83.77 грн
100+75.28 грн
Мінімальне замовлення: 2
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AOT10N60_001 AOT10N60.pdf
AOT10N60_001
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 10A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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AOT10N60CL
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Part Status: Last Time Buy
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AOT10N60L AOT10N60.pdf
AOT10N60L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CHANNEL 600V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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AOT10N65 TO220.pdf
AOT10N65
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 25 V
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AOT10T60L AOTF10T60.pdf
AOT10T60L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 100 V
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AOT10T60P AOT10T60P.pdf
AOT10T60P
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CHANNEL 600V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 100 V
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AOT10T60PL AOT10T60P.pdf
AOT10T60PL
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 100 V
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AOT1100L AOT1100L.pdf
AOT1100L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 8A/130A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4833 pF @ 25 V
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AOT11C60 AOT11C60.pdf
AOT11C60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CHANNEL 600V 11A TO220
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AOT11C60L AOB11C60.pdf
AOT11C60L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 11A TO220
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AOT11C60PL AOT11C60P.pdf
AOT11C60PL
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 11A TO220
товару немає в наявності
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