Продукція > ANBON SEMICONDUCTOR (INT'L) LIMITED > Всі товари виробника ANBON SEMICONDUCTOR (INT'L) LIMITED (154) > Сторінка 1 з 3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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1.5SMC33CA | ANBON SEMICONDUCTOR (INT'L) LIMITED |
 Description: TVS DIODE 28.2VWM 45.7V DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 33.3A Voltage - Reverse Standoff (Typ): 28.2V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 31.4V Voltage - Clamping (Max) @ Ipp: 45.7V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
на замовлення 1938 шт: термін постачання 21-31 дні (днів) |
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1.5SMC33CA | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: TVS DIODE 28.2VWM 45.7V DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 33.3A Voltage - Reverse Standoff (Typ): 28.2V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 31.4V Voltage - Clamping (Max) @ Ipp: 45.7V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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1N4148W | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: DIODE STANDARD 75V 150MA SOD123 |
на замовлення 167 шт: термін постачання 21-31 дні (днів) |
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1N4148W | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: DIODE STANDARD 75V 150MA SOD123 |
на замовлення 84000 шт: термін постачання 21-31 дні (днів) |
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1N4148WS | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: DIODE STANDARD 75V 150MA SOD323 |
на замовлення 108000 шт: термін постачання 21-31 дні (днів) |
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1N4148WS | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: DIODE STANDARD 75V 150MA SOD323 |
на замовлення 1976 шт: термін постачання 21-31 дні (днів) |
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1N4148WT | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: DIODE STANDARD 75V 150MA SOD523 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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1N4148WT | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: DIODE STANDARD 75V 150MA SOD523 |
на замовлення 9871 шт: термін постачання 21-31 дні (днів) |
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2N7002EY | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: N-CHANNEL SMD MOSFET ESD PROTECT Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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2N7002EY | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: N-CHANNEL SMD MOSFET ESD PROTECT Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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30SQ045 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: DIODE SCHOTTKY 45V 30A AXIAL Packaging: Tape & Reel (TR) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 30A Supplier Device Package: Axial Operating Temperature - Junction: -55°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 30 A Current - Reverse Leakage @ Vr: 500 µA @ 45 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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30SQ045 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: DIODE SCHOTTKY 45V 30A AXIAL Packaging: Cut Tape (CT) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 30A Supplier Device Package: Axial Operating Temperature - Junction: -55°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 30 A Current - Reverse Leakage @ Vr: 500 µA @ 45 V |
на замовлення 1291 шт: термін постачання 21-31 дні (днів) |
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40SQ045 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: DIODE SCHOTTKY 45V 40A AXIAL Packaging: Cut Tape (CT) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 40A Supplier Device Package: Axial Operating Temperature - Junction: -55°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 40 A Current - Reverse Leakage @ Vr: 500 µA @ 45 V |
на замовлення 2078 шт: термін постачання 21-31 дні (днів) |
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40SQ045 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: DIODE SCHOTTKY 45V 40A AXIAL Packaging: Tape & Box (TB) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 40A Supplier Device Package: Axial Operating Temperature - Junction: -55°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 40 A Current - Reverse Leakage @ Vr: 500 µA @ 45 V |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
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AS1M025120P | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: N-CHANNEL SILICON CARBIDE POWER Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V Power Dissipation (Max): 463W (Tc) Vgs(th) (Max) @ Id: 4V @ 15mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 1000 V |
на замовлення 124 шт: термін постачання 21-31 дні (днів) |
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AS1M025120T | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: N-CHANNEL SILICON CARBIDE POWER Package / Case: TO-247-4 Packaging: Tube Supplier Device Package: TO-247-4 Vgs(th) (Max) @ Id: 4V @ 15mA Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 1000 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 20 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +25V, -10V Drive Voltage (Max Rds On, Min Rds On): 20V |
на замовлення 13 шт: термін постачання 21-31 дні (днів) |
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AS1M040120T | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: N-CHANNEL SILICON CARBIDE POWER Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 40A, 20V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2946 pF @ 1000 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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AS1M080120P | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: N-CHANNEL SILICON CARBIDE POWER Input Capacitance (Ciss) (Max) @ Vds: 1475 pF @ 1000 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 20 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +25V, -10V Drive Voltage (Max Rds On, Min Rds On): 20V Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 4V @ 5mA Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 34 шт: термін постачання 21-31 дні (днів) |
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AS2302 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: N-CHANNEL ENHANCEMENT MODE MOSFE Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 3.81 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1.25V @ 250µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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AS2302 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: N-CHANNEL ENHANCEMENT MODE MOSFE Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1.25V @ 250µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 3.81 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V |
на замовлення 2867 шт: термін постачання 21-31 дні (днів) |
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AS2312 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: N-CHANNEL ENHANCEMENT MODE MOSFE Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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AS2312 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: N-CHANNEL ENHANCEMENT MODE MOSFE Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 1661 шт: термін постачання 21-31 дні (днів) |
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AS2324 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: N-CHANNEL ENHANCEMENT MODE MOSFE Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 280mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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AS2324 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: N-CHANNEL ENHANCEMENT MODE MOSFE Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 280mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount |
на замовлення 5029 шт: термін постачання 21-31 дні (днів) |
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AS2M040120P | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: N-CHANNEL SILICON CARBIDE POWER Input Capacitance (Ciss) (Max) @ Vds: 2946 pF @ 1000 V Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 20 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +25V, -10V Drive Voltage (Max Rds On, Min Rds On): 20V Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 4V @ 10mA Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 40A, 20V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Bulk |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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AS3400 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: N-CHANNEL ENHANCEMENT MODE MOSFE Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 5.6A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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AS3400 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: N-CHANNEL ENHANCEMENT MODE MOSFE Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 5.6A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 15 V |
на замовлення 5160 шт: термін постачання 21-31 дні (днів) |
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AS3401 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: P-CHANNEL ENHANCEMENT MODE MOSFE Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 10V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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AS3401 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: P-CHANNEL ENHANCEMENT MODE MOSFE Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 10V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 3080 шт: термін постачання 21-31 дні (днів) |
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AS3D020065A | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: 650V,20A SILICON CARBIDE SCHOTTK Packaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1190pF @ 0V, 1MHz Current - Average Rectified (Io): 56A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
на замовлення 137 шт: термін постачання 21-31 дні (днів) |
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AS3D020120C | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: 1200V,20A SILICON CARBIDE SCHOTT Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1280pF @ 0V, 1MHz Current - Average Rectified (Io): 51A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 20 µA @ 1200 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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AS3D020120P2 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: DIODE ARR SIC 1200V 30A TO247-3 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A (DC) Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A Current - Reverse Leakage @ Vr: 20 µA @ 1200 V |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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AS3D030065C | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: DIODE SIL CARB 650V 35A TO2472 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1805pF @ 0V, 1MHz Current - Average Rectified (Io): 35A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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AS3D030120P2 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: DIODE ARR SIC 1200V 42A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 42A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A Current - Reverse Leakage @ Vr: 20 µA @ 1200 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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AS3D040120P2 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: 1200V,40A SILICON CARBIDE SCHOTT Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 52A (DC) Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 20 µA @ 1200 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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AS6004 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: P-CHANNEL ENHANCEMENT MODE MOSFE Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 30 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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AS6004 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: P-CHANNEL ENHANCEMENT MODE MOSFE Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 30 V |
на замовлення 1710 шт: термін постачання 21-31 дні (днів) |
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ASB05LCDF | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: TVS DIODE 5VWM 22VC DFN2L Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TA) Applications: DVI, Telecom, USB Capacitance @ Frequency: 0.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: DFN-2L (0402) Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 22V Power - Peak Pulse: 80W Power Line Protection: No |
на замовлення 7812 шт: термін постачання 21-31 дні (днів) |
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ASB05LCDF | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: TVS DIODE 5VWM 22VC DFN2L Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TA) Applications: DVI, Telecom, USB Capacitance @ Frequency: 0.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: DFN-2L (0402) Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 22V Power - Peak Pulse: 80W Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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ASZD020120C | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: 1200V,20A SILICON CARBIDE SCHOTT Packaging: Tape & Reel (TR) |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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ASZD020120C | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: 1200V,20A SILICON CARBIDE SCHOTT Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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B5819WS | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: DIODE SCHOTTKY 40V 1A SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 120pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 40 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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B5819WS | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: DIODE SCHOTTKY 40V 1A SOD323 Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 120pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAV21W | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: DIODE STANDARD 250V 200MA SOD123 Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 250 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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BAV21W | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: DIODE STANDARD 250V 200MA SOD123 Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 250 V |
на замовлення 1329 шт: термін постачання 21-31 дні (днів) |
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BCP56-16 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: TRANS NPN 80V 1A SOT-223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Supplier Device Package: SOT-223 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.6 W |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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BCP56-16 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: TRANS NPN 80V 1A SOT-223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Supplier Device Package: SOT-223 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.6 W |
на замовлення 232 шт: термін постачання 21-31 дні (днів) |
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BSS123 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: N-CHANNEL ENHANCEMENT MODE MOSFE Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14 pF @ 50 V |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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BSS123 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: N-CHANNEL ENHANCEMENT MODE MOSFE Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14 pF @ 50 V |
на замовлення 428 шт: термін постачання 21-31 дні (днів) |
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BSS138 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: N-CHANNEL ENHANCEMENT MODE MOSFE |
на замовлення 57000 шт: термін постачання 21-31 дні (днів) |
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BSS138 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: N-CHANNEL ENHANCEMENT MODE MOSFE |
на замовлення 1197 шт: термін постачання 21-31 дні (днів) |
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BSS84 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: P-CHANNEL ENHANCEMENT MODE MOSFE |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
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BSS84 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: P-CHANNEL ENHANCEMENT MODE MOSFE |
на замовлення 1816 шт: термін постачання 21-31 дні (днів) |
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ESD3Z5.0C | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: TVS DIODE 5V VBR MIN 6V SOD-32 Applications: General Purpose Operating Temperature: 125°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Tape & Reel (TR) Power Line Protection: No Power - Peak Pulse: 320W Voltage - Clamping (Max) @ Ipp: 17V Voltage - Breakdown (Min): 6V Bidirectional Channels: 1 Supplier Device Package: SOD-323 Voltage - Reverse Standoff (Typ): 5V (Max) Current - Peak Pulse (10/1000µs): 24A Capacitance @ Frequency: 260pF @ 1MHz (Max) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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ESD3Z5.0C | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: TVS DIODE 5V VBR MIN 6V SOD-32 Power Line Protection: No Power - Peak Pulse: 320W Voltage - Breakdown (Min): 6V Bidirectional Channels: 1 Supplier Device Package: SOD-323 Voltage - Reverse Standoff (Typ): 5V (Max) Current - Peak Pulse (10/1000µs): 24A Capacitance @ Frequency: 260pF @ 1MHz (Max) Applications: General Purpose Operating Temperature: 125°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Voltage - Clamping (Max) @ Ipp: 17V Packaging: Cut Tape (CT) |
на замовлення 2980 шт: термін постачання 21-31 дні (днів) |
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ESD5Z5.0 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: TVS DIODE 5VWM 18.6VC SOD523 Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TA) Applications: General Purpose Capacitance @ Frequency: 80pF @ 1MHz Current - Peak Pulse (10/1000µs): 9.4A Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOD-523 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.2V Voltage - Clamping (Max) @ Ipp: 18.6V Power - Peak Pulse: 174W Power Line Protection: No |
на замовлення 798 шт: термін постачання 21-31 дні (днів) |
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ESD5Z5.0 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: TVS DIODE 5VWM 18.6VC SOD523 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TA) Applications: General Purpose Capacitance @ Frequency: 80pF @ 1MHz Current - Peak Pulse (10/1000µs): 9.4A Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOD-523 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.2V Voltage - Clamping (Max) @ Ipp: 18.6V Power - Peak Pulse: 174W Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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ESD5Z5.0C | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: TVS DIODE 5VWM 18.6VC SOD523 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TA) Applications: General Purpose Capacitance @ Frequency: 25pF @ 1MHz Current - Peak Pulse (10/1000µs): 9.4A Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOD-523 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 18.6V Power - Peak Pulse: 174W Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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ESD5Z5.0C | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: TVS DIODE 5VWM 18.6VC SOD523 Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TA) Applications: General Purpose Capacitance @ Frequency: 25pF @ 1MHz Current - Peak Pulse (10/1000µs): 9.4A Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOD-523 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 18.6V Power - Peak Pulse: 174W Power Line Protection: No |
на замовлення 1351 шт: термін постачання 21-31 дні (днів) |
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GBLC05C | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: TVS DIODE 5VWM 20VC SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: USB Capacitance @ Frequency: 0.8pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOD-323 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 350W Power Line Protection: No |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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| 1.5SMC33CA |
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Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: TVS DIODE 28.2VWM 45.7V DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 28.2VWM 45.7V DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 1938 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.61 грн |
| 13+ | 23.33 грн |
| 100+ | 14.90 грн |
| 500+ | 10.55 грн |
| 1000+ | 9.44 грн |
| 1.5SMC33CA |
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Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: TVS DIODE 28.2VWM 45.7V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 28.2VWM 45.7V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.89 грн |
| 6000+ | 7.80 грн |
| 9000+ | 7.42 грн |
| 1N4148W |
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Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE STANDARD 75V 150MA SOD123
Description: DIODE STANDARD 75V 150MA SOD123
на замовлення 167 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 6.99 грн |
| 87+ | 3.44 грн |
| 141+ | 2.12 грн |
| 1N4148W |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE STANDARD 75V 150MA SOD123
Description: DIODE STANDARD 75V 150MA SOD123
на замовлення 84000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.11 грн |
| 6000+ | 0.94 грн |
| 9000+ | 0.88 грн |
| 15000+ | 0.75 грн |
| 21000+ | 0.71 грн |
| 30000+ | 0.67 грн |
| 1N4148WS |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE STANDARD 75V 150MA SOD323
Description: DIODE STANDARD 75V 150MA SOD323
на замовлення 108000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.11 грн |
| 6000+ | 0.94 грн |
| 9000+ | 0.88 грн |
| 15000+ | 0.75 грн |
| 21000+ | 0.71 грн |
| 30000+ | 0.67 грн |
| 1N4148WS |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE STANDARD 75V 150MA SOD323
Description: DIODE STANDARD 75V 150MA SOD323
на замовлення 1976 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 6.99 грн |
| 87+ | 3.44 грн |
| 141+ | 2.12 грн |
| 500+ | 1.43 грн |
| 1000+ | 1.24 грн |
| 1N4148WT |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE STANDARD 75V 150MA SOD523
Description: DIODE STANDARD 75V 150MA SOD523
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 1.03 грн |
| 1N4148WT |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE STANDARD 75V 150MA SOD523
Description: DIODE STANDARD 75V 150MA SOD523
на замовлення 9871 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 6.99 грн |
| 79+ | 3.81 грн |
| 128+ | 2.34 грн |
| 500+ | 1.57 грн |
| 1000+ | 1.37 грн |
| 2000+ | 1.20 грн |
| 2N7002EY |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL SMD MOSFET ESD PROTECT
Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: N-CHANNEL SMD MOSFET ESD PROTECT
Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.72 грн |
| 6000+ | 1.47 грн |
| 9000+ | 1.37 грн |
| 15000+ | 1.19 грн |
| 21000+ | 1.13 грн |
| 30000+ | 1.07 грн |
| 2N7002EY |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL SMD MOSFET ESD PROTECT
Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: N-CHANNEL SMD MOSFET ESD PROTECT
Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| 30SQ045 |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE SCHOTTKY 45V 30A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: Axial
Operating Temperature - Junction: -55°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Description: DIODE SCHOTTKY 45V 30A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: Axial
Operating Temperature - Junction: -55°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 25.61 грн |
| 3000+ | 22.70 грн |
| 4500+ | 21.70 грн |
| 30SQ045 |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE SCHOTTKY 45V 30A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: Axial
Operating Temperature - Junction: -55°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Description: DIODE SCHOTTKY 45V 30A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: Axial
Operating Temperature - Junction: -55°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
на замовлення 1291 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 90.87 грн |
| 10+ | 55.19 грн |
| 100+ | 36.58 грн |
| 500+ | 26.80 грн |
| 40SQ045 |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE SCHOTTKY 45V 40A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: Axial
Operating Temperature - Junction: -55°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 40 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Description: DIODE SCHOTTKY 45V 40A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: Axial
Operating Temperature - Junction: -55°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 40 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
на замовлення 2078 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 126.59 грн |
| 10+ | 77.33 грн |
| 100+ | 52.10 грн |
| 500+ | 38.74 грн |
| 40SQ045 |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE SCHOTTKY 45V 40A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: Axial
Operating Temperature - Junction: -55°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 40 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Description: DIODE SCHOTTKY 45V 40A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: Axial
Operating Temperature - Junction: -55°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 40 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| AS1M025120P |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL SILICON CARBIDE POWER
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 4V @ 15mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 1000 V
Description: N-CHANNEL SILICON CARBIDE POWER
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 4V @ 15mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 1000 V
на замовлення 124 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2134.97 грн |
| 30+ | 1603.61 грн |
| AS1M025120T |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL SILICON CARBIDE POWER
Package / Case: TO-247-4
Packaging: Tube
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 4V @ 15mA
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Description: N-CHANNEL SILICON CARBIDE POWER
Package / Case: TO-247-4
Packaging: Tube
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 4V @ 15mA
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2513.19 грн |
| AS1M040120T |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL SILICON CARBIDE POWER
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 40A, 20V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2946 pF @ 1000 V
Description: N-CHANNEL SILICON CARBIDE POWER
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 40A, 20V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2946 pF @ 1000 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1550.94 грн |
| AS1M080120P |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL SILICON CARBIDE POWER
Input Capacitance (Ciss) (Max) @ Vds: 1475 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 5mA
Power Dissipation (Max): 192W (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: N-CHANNEL SILICON CARBIDE POWER
Input Capacitance (Ciss) (Max) @ Vds: 1475 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 5mA
Power Dissipation (Max): 192W (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 34 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 918.76 грн |
| 30+ | 537.14 грн |
| AS2302 |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.81 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.81 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.19 грн |
| 6000+ | 1.88 грн |
| 9000+ | 1.76 грн |
| 15000+ | 1.53 грн |
| AS2302 |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.81 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.81 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
на замовлення 2867 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.65 грн |
| 46+ | 6.51 грн |
| 100+ | 4.04 грн |
| 500+ | 2.75 грн |
| 1000+ | 2.41 грн |
| AS2312 |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.07 грн |
| 6000+ | 2.67 грн |
| 9000+ | 2.53 грн |
| 15000+ | 2.22 грн |
| 21000+ | 2.13 грн |
| AS2312 |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 1661 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 17.09 грн |
| 30+ | 10.10 грн |
| 100+ | 6.27 грн |
| 500+ | 4.31 грн |
| 1000+ | 3.80 грн |
| AS2324 |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.33 грн |
| 6000+ | 2.98 грн |
| 9000+ | 2.47 грн |
| AS2324 |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
на замовлення 5029 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 20.19 грн |
| 23+ | 13.09 грн |
| 100+ | 6.39 грн |
| 500+ | 5.00 грн |
| 1000+ | 3.48 грн |
| AS2M040120P |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL SILICON CARBIDE POWER
Input Capacitance (Ciss) (Max) @ Vds: 2946 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 10mA
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 40A, 20V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Description: N-CHANNEL SILICON CARBIDE POWER
Input Capacitance (Ciss) (Max) @ Vds: 2946 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 10mA
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 40A, 20V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1549.38 грн |
| 30+ | 947.87 грн |
| AS3400 |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.6A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 15 V
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.6A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AS3400 |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.6A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 15 V
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.6A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 15 V
на замовлення 5160 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 14.76 грн |
| 34+ | 9.05 грн |
| 100+ | 5.60 грн |
| 500+ | 3.85 грн |
| 1000+ | 3.39 грн |
| AS3401 |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: P-CHANNEL ENHANCEMENT MODE MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: P-CHANNEL ENHANCEMENT MODE MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.18 грн |
| 6000+ | 2.75 грн |
| 9000+ | 2.58 грн |
| 15000+ | 2.25 грн |
| 21000+ | 2.15 грн |
| AS3401 |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: P-CHANNEL ENHANCEMENT MODE MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: P-CHANNEL ENHANCEMENT MODE MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 3080 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.53 грн |
| 33+ | 9.27 грн |
| 100+ | 5.73 грн |
| 500+ | 3.94 грн |
| 1000+ | 3.47 грн |
| AS3D020065A |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: 650V,20A SILICON CARBIDE SCHOTTK
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1190pF @ 0V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: 650V,20A SILICON CARBIDE SCHOTTK
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1190pF @ 0V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 137 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 334.73 грн |
| 50+ | 180.88 грн |
| 100+ | 166.51 грн |
| AS3D020120C |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: 1200V,20A SILICON CARBIDE SCHOTT
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1280pF @ 0V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Description: 1200V,20A SILICON CARBIDE SCHOTT
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1280pF @ 0V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 459.77 грн |
| 10+ | 379.69 грн |
| AS3D020120P2 |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE ARR SIC 1200V 30A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Description: DIODE ARR SIC 1200V 30A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 476.85 грн |
| 30+ | 281.32 грн |
| AS3D030065C |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE SIL CARB 650V 35A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1805pF @ 0V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARB 650V 35A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1805pF @ 0V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 616.65 грн |
| 30+ | 346.11 грн |
| AS3D030120P2 |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE ARR SIC 1200V 42A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 42A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Description: DIODE ARR SIC 1200V 42A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 42A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 740.91 грн |
| 30+ | 422.20 грн |
| AS3D040120P2 |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: 1200V,40A SILICON CARBIDE SCHOTT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 52A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Description: 1200V,40A SILICON CARBIDE SCHOTT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 52A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 852.74 грн |
| 10+ | 741.96 грн |
| AS6004 |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: P-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 30 V
Description: P-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 30 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.33 грн |
| 6000+ | 6.41 грн |
| AS6004 |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: P-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 30 V
Description: P-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 30 V
на замовлення 1710 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.62 грн |
| 16+ | 19.67 грн |
| 100+ | 12.46 грн |
| 500+ | 8.77 грн |
| 1000+ | 7.82 грн |
| ASB05LCDF |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: TVS DIODE 5VWM 22VC DFN2L
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: DVI, Telecom, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN-2L (0402)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 80W
Power Line Protection: No
Description: TVS DIODE 5VWM 22VC DFN2L
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: DVI, Telecom, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN-2L (0402)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 80W
Power Line Protection: No
на замовлення 7812 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 7.77 грн |
| 182+ | 1.65 грн |
| 223+ | 1.26 грн |
| 240+ | 1.17 грн |
| 267+ | 1.05 грн |
| 500+ | 0.96 грн |
| 1000+ | 0.89 грн |
| 5000+ | 0.74 грн |
| ASB05LCDF |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: TVS DIODE 5VWM 22VC DFN2L
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: DVI, Telecom, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN-2L (0402)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 80W
Power Line Protection: No
Description: TVS DIODE 5VWM 22VC DFN2L
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: DVI, Telecom, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN-2L (0402)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 80W
Power Line Protection: No
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| ASZD020120C |
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: 1200V,20A SILICON CARBIDE SCHOTT
Packaging: Tape & Reel (TR)
Description: 1200V,20A SILICON CARBIDE SCHOTT
Packaging: Tape & Reel (TR)
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 148.28 грн |
| ASZD020120C |
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: 1200V,20A SILICON CARBIDE SCHOTT
Packaging: Cut Tape (CT)
Description: 1200V,20A SILICON CARBIDE SCHOTT
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| B5819WS |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE SCHOTTKY 40V 1A SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Description: DIODE SCHOTTKY 40V 1A SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| B5819WS |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE SCHOTTKY 40V 1A SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Description: DIODE SCHOTTKY 40V 1A SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
| BAV21W |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE STANDARD 250V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 250 V
Description: DIODE STANDARD 250V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 250 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.18 грн |
| 6000+ | 1.00 грн |
| 9000+ | 0.93 грн |
| BAV21W |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE STANDARD 250V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 250 V
Description: DIODE STANDARD 250V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 250 V
на замовлення 1329 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 6.99 грн |
| 82+ | 3.66 грн |
| 133+ | 2.25 грн |
| 500+ | 1.51 грн |
| 1000+ | 1.32 грн |
| BCP56-16 |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: TRANS NPN 80V 1A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.6 W
Description: TRANS NPN 80V 1A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.6 W
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BCP56-16 |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: TRANS NPN 80V 1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.6 W
Description: TRANS NPN 80V 1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.6 W
на замовлення 232 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.63 грн |
| 20+ | 15.18 грн |
| 100+ | 9.54 грн |
| BSS123 |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14 pF @ 50 V
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14 pF @ 50 V
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.78 грн |
| 6000+ | 1.52 грн |
| 9000+ | 1.42 грн |
| 15000+ | 1.23 грн |
| 21000+ | 1.17 грн |
| 30000+ | 1.11 грн |
| BSS123 |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14 pF @ 50 V
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14 pF @ 50 V
на замовлення 428 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 9.32 грн |
| 56+ | 5.38 грн |
| 100+ | 3.32 грн |
| BSS138 |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.69 грн |
| 6000+ | 1.44 грн |
| 9000+ | 1.35 грн |
| 15000+ | 1.17 грн |
| 21000+ | 1.11 грн |
| 30000+ | 1.05 грн |
| BSS138 |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
на замовлення 1197 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 37+ | 8.54 грн |
| 58+ | 5.16 грн |
| 100+ | 3.16 грн |
| 500+ | 2.14 грн |
| 1000+ | 1.87 грн |
| BSS84 |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: P-CHANNEL ENHANCEMENT MODE MOSFE
Description: P-CHANNEL ENHANCEMENT MODE MOSFE
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.33 грн |
| 6000+ | 1.99 грн |
| 9000+ | 1.87 грн |
| 15000+ | 1.62 грн |
| 21000+ | 1.54 грн |
| 30000+ | 1.47 грн |
| BSS84 |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: P-CHANNEL ENHANCEMENT MODE MOSFE
Description: P-CHANNEL ENHANCEMENT MODE MOSFE
на замовлення 1816 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.65 грн |
| 44+ | 6.96 грн |
| 100+ | 4.28 грн |
| 500+ | 2.92 грн |
| 1000+ | 2.56 грн |
| ESD3Z5.0C |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: TVS DIODE 5V VBR MIN 6V SOD-32
Applications: General Purpose
Operating Temperature: 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 320W
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 24A
Capacitance @ Frequency: 260pF @ 1MHz (Max)
Description: TVS DIODE 5V VBR MIN 6V SOD-32
Applications: General Purpose
Operating Temperature: 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 320W
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 24A
Capacitance @ Frequency: 260pF @ 1MHz (Max)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ESD3Z5.0C |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: TVS DIODE 5V VBR MIN 6V SOD-32
Power Line Protection: No
Power - Peak Pulse: 320W
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 24A
Capacitance @ Frequency: 260pF @ 1MHz (Max)
Applications: General Purpose
Operating Temperature: 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Voltage - Clamping (Max) @ Ipp: 17V
Packaging: Cut Tape (CT)
Description: TVS DIODE 5V VBR MIN 6V SOD-32
Power Line Protection: No
Power - Peak Pulse: 320W
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 24A
Capacitance @ Frequency: 260pF @ 1MHz (Max)
Applications: General Purpose
Operating Temperature: 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Voltage - Clamping (Max) @ Ipp: 17V
Packaging: Cut Tape (CT)
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 6.99 грн |
| 75+ | 4.04 грн |
| 77+ | 3.89 грн |
| 87+ | 3.24 грн |
| 100+ | 3.01 грн |
| 250+ | 2.68 грн |
| 500+ | 2.20 грн |
| 1000+ | 2.09 грн |
| ESD5Z5.0 |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: TVS DIODE 5VWM 18.6VC SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 80pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 18.6V
Power - Peak Pulse: 174W
Power Line Protection: No
Description: TVS DIODE 5VWM 18.6VC SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 80pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 18.6V
Power - Peak Pulse: 174W
Power Line Protection: No
на замовлення 798 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 38+ | 8.27 грн |
| 62+ | 4.87 грн |
| 101+ | 2.99 грн |
| 500+ | 2.03 грн |
| ESD5Z5.0 |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: TVS DIODE 5VWM 18.6VC SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 80pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 18.6V
Power - Peak Pulse: 174W
Power Line Protection: No
Description: TVS DIODE 5VWM 18.6VC SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 80pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 18.6V
Power - Peak Pulse: 174W
Power Line Protection: No
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ESD5Z5.0C |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: TVS DIODE 5VWM 18.6VC SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-523
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 18.6V
Power - Peak Pulse: 174W
Power Line Protection: No
Description: TVS DIODE 5VWM 18.6VC SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-523
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 18.6V
Power - Peak Pulse: 174W
Power Line Protection: No
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ESD5Z5.0C |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: TVS DIODE 5VWM 18.6VC SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-523
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 18.6V
Power - Peak Pulse: 174W
Power Line Protection: No
Description: TVS DIODE 5VWM 18.6VC SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-523
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 18.6V
Power - Peak Pulse: 174W
Power Line Protection: No
на замовлення 1351 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 9.32 грн |
| 58+ | 5.24 грн |
| 100+ | 3.22 грн |
| 500+ | 2.18 грн |
| 1000+ | 1.91 грн |
| GBLC05C |
|
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: TVS DIODE 5VWM 20VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 350W
Power Line Protection: No
Description: TVS DIODE 5VWM 20VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 350W
Power Line Protection: No
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.34 грн |
| 6000+ | 2.89 грн |
| 9000+ | 2.72 грн |
| 15000+ | 2.37 грн |