Продукція > CAMBRIDGE GAN DEVICES > Всі товари виробника CAMBRIDGE GAN DEVICES (18) > Сторінка 1 з 1

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CGD65A055S2-T07 CGD65A055S2-T07 Cambridge GaN Devices CGD65A055S2.pdf Description: 650V GAN HEMT, 55MOHM, DFN8X8. W
Packaging: Cut Tape (CT)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 2.2A, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 10mA
Supplier Device Package: 16-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 12 V
на замовлення 646 шт:
термін постачання 21-31 дні (днів)
1+1160.38 грн
10+791.15 грн
100+732.31 грн
В кошику  од. на суму  грн.
CGD65A055S2-T07 CGD65A055S2-T07 Cambridge GaN Devices CGD65A055S2.pdf Description: 650V GAN HEMT, 55MOHM, DFN8X8. W
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 2.2A, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 10mA
Supplier Device Package: 16-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 12 V
товару немає в наявності
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CGD65A055SH2 CGD65A055SH2 Cambridge GaN Devices product-CGD65A055SH2 Description: 650V GAN HEMT, 55MOHM, DFN8X8. W
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A
Rds On (Max) @ Id, Vgs: 77mOhm @ 2.2A, 12V
Vgs(th) (Max) @ Id: 4.2V @ 10mA
Supplier Device Package: 16-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 12 V
товару немає в наявності
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CGD65A055SH2 CGD65A055SH2 Cambridge GaN Devices product-CGD65A055SH2 Description: 650V GAN HEMT, 55MOHM, DFN8X8. W
Packaging: Cut Tape (CT)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A
Rds On (Max) @ Id, Vgs: 77mOhm @ 2.2A, 12V
Vgs(th) (Max) @ Id: 4.2V @ 10mA
Supplier Device Package: 16-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 12 V
на замовлення 3090 шт:
термін постачання 21-31 дні (днів)
1+881.92 грн
10+592.20 грн
100+513.65 грн
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CGD65A130S2-T13 CGD65A130S2-T13 Cambridge GaN Devices Description: 650V GAN HEMT, 130MOHM, DFN8X8.
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 16-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V
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CGD65A130S2-T13 CGD65A130S2-T13 Cambridge GaN Devices Description: 650V GAN HEMT, 130MOHM, DFN8X8.
Packaging: Cut Tape (CT)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 16-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V
на замовлення 3306 шт:
термін постачання 21-31 дні (днів)
1+537.32 грн
10+351.42 грн
100+268.17 грн
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CGD65A130SH2 CGD65A130SH2 Cambridge GaN Devices CGD65A130SH2.pdf Description: 650V GAN HEMT, 130MOHM, DFN8X8.
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 16-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 12 V
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CGD65A130SH2 CGD65A130SH2 Cambridge GaN Devices CGD65A130SH2.pdf Description: 650V GAN HEMT, 130MOHM, DFN8X8.
Packaging: Cut Tape (CT)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 16-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 12 V
на замовлення 3423 шт:
термін постачання 21-31 дні (днів)
1+542.22 грн
10+353.86 грн
100+268.67 грн
В кошику  од. на суму  грн.
CGD65B130S2-T13 CGD65B130S2-T13 Cambridge GaN Devices CGD65B130S2.pdf Description: 650V GAN HEMT, 130MOHM, DFN5X6.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 9V, 20V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V
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CGD65B130S2-T13 CGD65B130S2-T13 Cambridge GaN Devices CGD65B130S2.pdf Description: 650V GAN HEMT, 130MOHM, DFN5X6.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 9V, 20V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V
на замовлення 4851 шт:
термін постачання 21-31 дні (днів)
1+506.29 грн
10+329.87 грн
100+247.54 грн
В кошику  од. на суму  грн.
CGD65B130SH2 CGD65B130SH2 Cambridge GaN Devices product-CGD65B130SH2 Description: 650V GAN HEMT, 130MOHM, DFN5X6.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 12 V
на замовлення 4953 шт:
термін постачання 21-31 дні (днів)
1+509.56 грн
10+331.60 грн
100+247.52 грн
В кошику  од. на суму  грн.
CGD65B130SH2 CGD65B130SH2 Cambridge GaN Devices product-CGD65B130SH2 Description: 650V GAN HEMT, 130MOHM, DFN5X6.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 12 V
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CGD65B200S2-T13 CGD65B200S2-T13 Cambridge GaN Devices CGD65B200S2.pdf Description: 650V GAN HEMT, 200MOHM, DFN5X6.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 600mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 2.75mA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 9V, 20V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 12 V
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CGD65B200S2-T13 CGD65B200S2-T13 Cambridge GaN Devices CGD65B200S2.pdf Description: 650V GAN HEMT, 200MOHM, DFN5X6.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 600mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 2.75mA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 9V, 20V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 12 V
на замовлення 4139 шт:
термін постачання 21-31 дні (днів)
1+391.15 грн
10+251.40 грн
100+180.35 грн
500+164.55 грн
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CGD65B240SH2 CGD65B240SH2 Cambridge GaN Devices product-CGD65B240SH2 Description: 650V GAN HEMT, 240MOHM, DFN5X6.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 12 V
Rds On (Max) @ Id, Vgs: 336mOhm @ 500mA, 12V
Vgs(th) (Max) @ Id: 4.2V @ 2.3mA
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CGD65B240SH2 CGD65B240SH2 Cambridge GaN Devices product-CGD65B240SH2 Description: 650V GAN HEMT, 240MOHM, DFN5X6.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 12 V
Rds On (Max) @ Id, Vgs: 336mOhm @ 500mA, 12V
Vgs(th) (Max) @ Id: 4.2V @ 2.3mA
на замовлення 4715 шт:
термін постачання 21-31 дні (днів)
1+343.79 грн
10+230.16 грн
100+170.39 грн
500+137.84 грн
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CGD65C025SP2 CGD65C025SP2 Cambridge GaN Devices CGD_65_C025_SP_2_BHDFN_preliminary_datasheet_eeee687740.pdf Description: 650V GAN HEMT, 25 MOHM, 60A, BHD
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount, Wettable Flank
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 15V
Vgs(th) (Max) @ Id: 4.2V @ 22mA
Supplier Device Package: BHDFN-9-1
Drain to Source Voltage (Vdss): 650 V
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CGD65C025SP2 CGD65C025SP2 Cambridge GaN Devices CGD_65_C025_SP_2_BHDFN_preliminary_datasheet_eeee687740.pdf Description: 650V GAN HEMT, 25 MOHM, 60A, BHD
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount, Wettable Flank
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 15V
Vgs(th) (Max) @ Id: 4.2V @ 22mA
Supplier Device Package: BHDFN-9-1
Drain to Source Voltage (Vdss): 650 V
на замовлення 1489 шт:
термін постачання 21-31 дні (днів)
1+1749.15 грн
10+1237.72 грн
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CGD65A055S2-T07 CGD65A055S2.pdf
CGD65A055S2-T07
Виробник: Cambridge GaN Devices
Description: 650V GAN HEMT, 55MOHM, DFN8X8. W
Packaging: Cut Tape (CT)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 2.2A, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 10mA
Supplier Device Package: 16-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 12 V
на замовлення 646 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1160.38 грн
10+791.15 грн
100+732.31 грн
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CGD65A055S2-T07 CGD65A055S2.pdf
CGD65A055S2-T07
Виробник: Cambridge GaN Devices
Description: 650V GAN HEMT, 55MOHM, DFN8X8. W
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 2.2A, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 10mA
Supplier Device Package: 16-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 12 V
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CGD65A055SH2 product-CGD65A055SH2
CGD65A055SH2
Виробник: Cambridge GaN Devices
Description: 650V GAN HEMT, 55MOHM, DFN8X8. W
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A
Rds On (Max) @ Id, Vgs: 77mOhm @ 2.2A, 12V
Vgs(th) (Max) @ Id: 4.2V @ 10mA
Supplier Device Package: 16-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 12 V
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CGD65A055SH2 product-CGD65A055SH2
CGD65A055SH2
Виробник: Cambridge GaN Devices
Description: 650V GAN HEMT, 55MOHM, DFN8X8. W
Packaging: Cut Tape (CT)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A
Rds On (Max) @ Id, Vgs: 77mOhm @ 2.2A, 12V
Vgs(th) (Max) @ Id: 4.2V @ 10mA
Supplier Device Package: 16-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 12 V
на замовлення 3090 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+881.92 грн
10+592.20 грн
100+513.65 грн
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CGD65A130S2-T13
CGD65A130S2-T13
Виробник: Cambridge GaN Devices
Description: 650V GAN HEMT, 130MOHM, DFN8X8.
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 16-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V
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CGD65A130S2-T13
CGD65A130S2-T13
Виробник: Cambridge GaN Devices
Description: 650V GAN HEMT, 130MOHM, DFN8X8.
Packaging: Cut Tape (CT)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 16-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V
на замовлення 3306 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+537.32 грн
10+351.42 грн
100+268.17 грн
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CGD65A130SH2 CGD65A130SH2.pdf
CGD65A130SH2
Виробник: Cambridge GaN Devices
Description: 650V GAN HEMT, 130MOHM, DFN8X8.
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 16-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 12 V
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CGD65A130SH2 CGD65A130SH2.pdf
CGD65A130SH2
Виробник: Cambridge GaN Devices
Description: 650V GAN HEMT, 130MOHM, DFN8X8.
Packaging: Cut Tape (CT)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 16-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 12 V
на замовлення 3423 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+542.22 грн
10+353.86 грн
100+268.67 грн
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CGD65B130S2-T13 CGD65B130S2.pdf
CGD65B130S2-T13
Виробник: Cambridge GaN Devices
Description: 650V GAN HEMT, 130MOHM, DFN5X6.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 9V, 20V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V
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CGD65B130S2-T13 CGD65B130S2.pdf
CGD65B130S2-T13
Виробник: Cambridge GaN Devices
Description: 650V GAN HEMT, 130MOHM, DFN5X6.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 9V, 20V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V
на замовлення 4851 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+506.29 грн
10+329.87 грн
100+247.54 грн
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CGD65B130SH2 product-CGD65B130SH2
CGD65B130SH2
Виробник: Cambridge GaN Devices
Description: 650V GAN HEMT, 130MOHM, DFN5X6.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 12 V
на замовлення 4953 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+509.56 грн
10+331.60 грн
100+247.52 грн
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CGD65B130SH2 product-CGD65B130SH2
CGD65B130SH2
Виробник: Cambridge GaN Devices
Description: 650V GAN HEMT, 130MOHM, DFN5X6.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 12 V
товару немає в наявності
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CGD65B200S2-T13 CGD65B200S2.pdf
CGD65B200S2-T13
Виробник: Cambridge GaN Devices
Description: 650V GAN HEMT, 200MOHM, DFN5X6.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 600mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 2.75mA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 9V, 20V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 12 V
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CGD65B200S2-T13 CGD65B200S2.pdf
CGD65B200S2-T13
Виробник: Cambridge GaN Devices
Description: 650V GAN HEMT, 200MOHM, DFN5X6.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 600mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 2.75mA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 9V, 20V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 12 V
на замовлення 4139 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+391.15 грн
10+251.40 грн
100+180.35 грн
500+164.55 грн
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CGD65B240SH2 product-CGD65B240SH2
CGD65B240SH2
Виробник: Cambridge GaN Devices
Description: 650V GAN HEMT, 240MOHM, DFN5X6.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 12 V
Rds On (Max) @ Id, Vgs: 336mOhm @ 500mA, 12V
Vgs(th) (Max) @ Id: 4.2V @ 2.3mA
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CGD65B240SH2 product-CGD65B240SH2
CGD65B240SH2
Виробник: Cambridge GaN Devices
Description: 650V GAN HEMT, 240MOHM, DFN5X6.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 12 V
Rds On (Max) @ Id, Vgs: 336mOhm @ 500mA, 12V
Vgs(th) (Max) @ Id: 4.2V @ 2.3mA
на замовлення 4715 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+343.79 грн
10+230.16 грн
100+170.39 грн
500+137.84 грн
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CGD65C025SP2 CGD_65_C025_SP_2_BHDFN_preliminary_datasheet_eeee687740.pdf
CGD65C025SP2
Виробник: Cambridge GaN Devices
Description: 650V GAN HEMT, 25 MOHM, 60A, BHD
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount, Wettable Flank
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 15V
Vgs(th) (Max) @ Id: 4.2V @ 22mA
Supplier Device Package: BHDFN-9-1
Drain to Source Voltage (Vdss): 650 V
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CGD65C025SP2 CGD_65_C025_SP_2_BHDFN_preliminary_datasheet_eeee687740.pdf
CGD65C025SP2
Виробник: Cambridge GaN Devices
Description: 650V GAN HEMT, 25 MOHM, 60A, BHD
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount, Wettable Flank
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 15V
Vgs(th) (Max) @ Id: 4.2V @ 22mA
Supplier Device Package: BHDFN-9-1
Drain to Source Voltage (Vdss): 650 V
на замовлення 1489 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1749.15 грн
10+1237.72 грн
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