Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (75032) > Сторінка 1118 з 1251
| Фото | Назва | Виробник | Інформація |
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| DMN31D5UFO-7B | DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 0.32A; Idm: 0.7A; 0.38W Mounting: SMD Kind of package: reel; tape On-state resistance: 4.5Ω Type of transistor: N-MOSFET Power dissipation: 0.38W Polarisation: unipolar Gate charge: 0.38nC Case: X2-DFN0604-3 Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 0.7A Drain-source voltage: 30V Drain current: 0.32A кількість в упаковці: 20 шт |
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| DMN31D5UFZ-7B | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 150mA; Idm: 0.5A; 393mW Mounting: SMD Kind of package: reel; tape On-state resistance: 4.5Ω Type of transistor: N-MOSFET Power dissipation: 393mW Polarisation: unipolar Gate charge: 0.35nC Case: X2-DFN0606-3 Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 0.5A Drain-source voltage: 30V Drain current: 0.15A кількість в упаковці: 10000 шт |
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DMN31D6UT-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 350mA; Idm: 0.8A; 320mW; SOT523 Mounting: SMD Kind of package: reel; tape On-state resistance: 2Ω Type of transistor: N-MOSFET Power dissipation: 0.32W Polarisation: unipolar Gate charge: 0.35nC Case: SOT523 Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 0.8A Drain-source voltage: 30V Drain current: 0.35A кількість в упаковці: 10 шт |
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DMN3200U-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.2A; Idm: 9A; 650mW; SOT23-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.2A Pulsed drain current: 9A Power dissipation: 0.65W Case: SOT23-3 Gate-source voltage: ±8V On-state resistance: 0.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
на замовлення 3605 шт: термін постачання 7-14 дні (днів) |
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DMN32D2LDF-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 400mA; 280mW; SOT353 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.4A Power dissipation: 0.28W Case: SOT353 Gate-source voltage: ±10V On-state resistance: 2.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Semiconductor structure: common source Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
на замовлення 2000 шт: термін постачання 7-14 дні (днів) |
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| DMN32D2LFB4-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; 350mW; X2-DFN1006-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.3A Power dissipation: 0.35W Case: X2-DFN1006-3 Gate-source voltage: ±10V On-state resistance: 2.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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DMN32D4SDW-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A; 350mW; SOT363 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.5A Pulsed drain current: 4A Power dissipation: 0.35W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: SMD Gate charge: 1.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10000 шт |
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DMN32D4SDW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A; 350mW; SOT363 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.5A Pulsed drain current: 4A Power dissipation: 0.35W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: SMD Gate charge: 1.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
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DMN3300UQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 8A; 1.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.6A Pulsed drain current: 8A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
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| DMN33D8LDW-13 | DIODES INCORPORATED |
DMN33D8LDW-13 Multi channel transistors |
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| DMN33D8LDW-7 | DIODES INCORPORATED |
DMN33D8LDW-7 Multi channel transistors |
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DMN33D8LT-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 115mA; 300mW; SOT523 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.115A Power dissipation: 0.3W Case: SOT523 Gate-source voltage: ±20V On-state resistance: 7Ω Mounting: SMD Gate charge: 1.23nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10000 шт |
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| DMN33D8LT-7 | DIODES INCORPORATED |
DMN33D8LT-7 SMD N channel transistors |
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| DMN33D9LV-13 | DIODES INCORPORATED | DMN33D9LV-13 Multi channel transistors |
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| DMN33D9LV-13A | DIODES INCORPORATED | DMN33D9LV-13A Multi channel transistors |
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| DMN33D9LV-7 | DIODES INCORPORATED |
DMN33D9LV-7 Multi channel transistors |
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| DMN33D9LV-7A | DIODES INCORPORATED |
DMN33D9LV-7A Multi channel transistors |
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DMN3401LDW-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 4A; 350mW Type of transistor: N-MOSFET x2 Case: SOT363 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.35W On-state resistance: 0.7Ω Polarisation: unipolar Gate charge: 1.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 4A Drain current: 0.6A Drain-source voltage: 30V кількість в упаковці: 10000 шт |
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DMN3401LDW-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 4A; 350mW Type of transistor: N-MOSFET x2 Case: SOT363 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.35W On-state resistance: 0.7Ω Polarisation: unipolar Gate charge: 1.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 4A Drain current: 0.6A Drain-source voltage: 30V кількість в упаковці: 10 шт |
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DMN3404L-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3A; 0.72W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3A Power dissipation: 0.72W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.082Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 9605 шт: термін постачання 7-14 дні (днів) |
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DMN3404LQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 30A; 1.4W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Pulsed drain current: 30A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
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| DMN3730U-7 | DIODES INCORPORATED |
DMN3730U-7 SMD N channel transistors |
на замовлення 1500 шт: термін постачання 7-14 дні (днів) |
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| DMN3730UFB-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW Case: X1-DFN1006-3 Mounting: SMD Kind of package: reel; tape Gate charge: 1.6nC Polarisation: unipolar Drain current: 730mA Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±8V On-state resistance: 0.73Ω Pulsed drain current: 3A Power dissipation: 0.69W кількість в упаковці: 1 шт |
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DMN3730UFB4-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 0.75A; Idm: 10A; 0.45W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Features of semiconductor devices: ESD protected gate Drain current: 0.75A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±8V On-state resistance: 0.46Ω Pulsed drain current: 10A Power dissipation: 0.45W кількість в упаковці: 3000 шт |
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| DMN3730UFB4-7B | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW Case: X2-DFN1006-3 Mounting: SMD Kind of package: reel; tape Gate charge: 1.6nC Polarisation: unipolar Drain current: 730mA Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±8V On-state resistance: 0.73Ω Pulsed drain current: 3A Power dissipation: 0.69W кількість в упаковці: 10000 шт |
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DMN3731U-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 700mA; Idm: 3A; 580mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.7A Pulsed drain current: 3A Power dissipation: 0.58W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.73Ω Mounting: SMD Gate charge: 5.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10000 шт |
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DMN3731U-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 700mA; Idm: 3A; 580mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.7A Pulsed drain current: 3A Power dissipation: 0.58W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.73Ω Mounting: SMD Gate charge: 5.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 20 шт |
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| DMN3731UFB4-7B | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 900mA; Idm: 3A; 970mW Mounting: SMD Case: X2-DFN1006-3 Kind of package: reel; tape Pulsed drain current: 3A Drain-source voltage: 30V Drain current: 0.9A On-state resistance: 0.73Ω Type of transistor: N-MOSFET Power dissipation: 970mW Polarisation: unipolar Gate charge: 5.5nC Kind of channel: enhanced Gate-source voltage: ±8V кількість в упаковці: 10000 шт |
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| DMN3900UFA-7B | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 520mA; Idm: 2.5A; 390mW Mounting: SMD Case: X2-DFN0806-3 Kind of package: reel; tape Power dissipation: 0.39W Drain-source voltage: 30V Drain current: 520mA On-state resistance: 1.5Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 0.7nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 2.5A кількість в упаковці: 10000 шт |
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| DMN4008LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W Drain-source voltage: 40V Drain current: 15.4A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 74nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 90A Mounting: SMD Case: PowerDI3333-8 кількість в упаковці: 3000 шт |
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| DMN4008LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W Drain-source voltage: 40V Drain current: 15.4A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 74nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 90A Mounting: SMD Case: PowerDI3333-8 кількість в упаковці: 2000 шт |
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| DMN4010LFG-13 | DIODES INCORPORATED |
DMN4010LFG-13 SMD N channel transistors |
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| DMN4010LFG-7 | DIODES INCORPORATED |
DMN4010LFG-7 SMD N channel transistors |
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| DMN4010LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 9.5A; Idm: 80A; 2.4W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 9.5A Pulsed drain current: 80A Power dissipation: 2.4W Case: TO252 Gate-source voltage: ±20V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
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| DMN4020LFDE-13 | DIODES INCORPORATED |
DMN4020LFDE-13 SMD N channel transistors |
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| DMN4020LFDE-7 | DIODES INCORPORATED |
DMN4020LFDE-7 SMD N channel transistors |
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| DMN4020LFDEQ-7 | DIODES INCORPORATED | DMN4020LFDEQ-7 SMD N channel transistors |
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| DMN4026SK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 70A; 2.1W; TO252 Kind of package: reel; tape Drain-source voltage: 40V Drain current: 18A On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Gate charge: 21.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 70A Mounting: SMD Case: TO252 кількість в упаковці: 1 шт |
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DMN4026SSD-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 7.2A; Idm: 70A; 1.1W; SO8 Polarisation: unipolar On-state resistance: 32mΩ Kind of package: reel; tape Drain current: 7.2A Drain-source voltage: 40V Case: SO8 Gate charge: 43nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 70A Type of transistor: N-MOSFET Mounting: SMD Power dissipation: 1.1W кількість в упаковці: 2500 шт |
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DMN4026SSDQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 7.2A; Idm: 70A; 1.1W; SO8 Kind of package: reel; tape Drain-source voltage: 40V Drain current: 7.2A On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 1.1W Polarisation: unipolar Gate charge: 43nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 70A Mounting: SMD Case: SO8 кількість в упаковці: 2500 шт |
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DMN4027SSD-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 5.7A; Idm: 28A; 2.14W; SO8 Polarisation: unipolar On-state resistance: 47mΩ Kind of package: reel; tape Drain current: 5.7A Drain-source voltage: 40V Case: SO8 Gate charge: 12.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 28A Type of transistor: N-MOSFET Mounting: SMD Power dissipation: 2.14W кількість в упаковці: 2500 шт |
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DMN4027SSDQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 5.7A; Idm: 28A; 2.14W; SO8 Kind of package: reel; tape Mounting: SMD Pulsed drain current: 28A Power dissipation: 2.14W Gate charge: 12.9nC Polarisation: unipolar Drain current: 5.7A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: SO8 On-state resistance: 47mΩ кількість в упаковці: 2500 шт |
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| DMN4030LK3-13 | DIODES INCORPORATED |
DMN4030LK3-13 SMD N channel transistors |
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DMN4031SSD-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8 Polarisation: unipolar On-state resistance: 50mΩ Kind of package: reel; tape Drain current: 5.6A Drain-source voltage: 40V Case: SO8 Gate charge: 18.6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Type of transistor: N-MOSFET Mounting: SMD Power dissipation: 2.6W кількість в упаковці: 1 шт |
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DMN4031SSDQ-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8 Kind of package: reel; tape Drain-source voltage: 40V Drain current: 5.6A On-state resistance: 50mΩ Type of transistor: N-MOSFET x2 Power dissipation: 2.6W Polarisation: unipolar Gate charge: 18.6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: SO8 кількість в упаковці: 1 шт |
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DMN4034SSD-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 24.8A; 2.14W; SO8 Polarisation: unipolar On-state resistance: 59mΩ Kind of package: reel; tape Drain current: 5A Drain-source voltage: 40V Case: SO8 Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 24.8A Type of transistor: N-MOSFET Mounting: SMD Power dissipation: 2.14W кількість в упаковці: 2500 шт |
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| DMN4034SSS-13 | DIODES INCORPORATED |
DMN4034SSS-13 SMD N channel transistors |
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| DMN4035L-13 | DIODES INCORPORATED |
DMN4035L-13 SMD N channel transistors |
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| DMN4035L-7 | DIODES INCORPORATED |
DMN4035L-7 SMD N channel transistors |
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| DMN4035LQ-7 | DIODES INCORPORATED |
DMN4035LQ-7 SMD N channel transistors |
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| DMN4036LK3-13 | DIODES INCORPORATED |
DMN4036LK3-13 SMD N channel transistors |
на замовлення 2225 шт: термін постачання 7-14 дні (днів) |
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| DMN4040SK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 11A; Idm: 50A; 8.9W; TO252 Mounting: SMD Case: TO252 Kind of package: reel; tape Pulsed drain current: 50A Power dissipation: 8.9W Gate charge: 18.6nC Polarisation: unipolar Drain current: 11A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 54mΩ кількість в упаковці: 1 шт |
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DMN4060SVT-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 45V; 4.1A; 1.2W; TSOT26 Mounting: SMD Power dissipation: 1.2W Case: TSOT26 Kind of package: reel; tape Polarisation: unipolar Drain current: 4.1A Kind of channel: enhanced Drain-source voltage: 45V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 62mΩ кількість в упаковці: 5 шт |
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DMN4468LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 50A; 1.52W; SO8 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 9A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 1.52W Polarisation: unipolar Gate charge: 18.85nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD Case: SO8 кількість в упаковці: 1 шт |
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DMN4800LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 50A; 1W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9A Pulsed drain current: 50A Power dissipation: 1W Case: SO8 Gate-source voltage: ±25V On-state resistance: 20mΩ Mounting: SMD Gate charge: 8.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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DMN4800LSSL-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; Idm: 50A; 1.46W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.3A Pulsed drain current: 50A Power dissipation: 1.46W Case: SO8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 8.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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DMN4800LSSQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 50A; 1W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9A Pulsed drain current: 50A Power dissipation: 1W Case: SO8 Gate-source voltage: ±25V On-state resistance: 20mΩ Mounting: SMD Gate charge: 8.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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DMN53D0L-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; 540mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.5A Power dissipation: 0.54W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10000 шт |
товар відсутній |
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DMN53D0L-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.37W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Power dissipation: 0.37W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
на замовлення 2645 шт: термін постачання 7-14 дні (днів) |
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DMN53D0LDW-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 360mA; 310mW; SOT363 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.36A Power dissipation: 0.31W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10000 шт |
товар відсутній |
| DMN31D5UFO-7B |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.32A; Idm: 0.7A; 0.38W
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.38W
Polarisation: unipolar
Gate charge: 0.38nC
Case: X2-DFN0604-3
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 0.7A
Drain-source voltage: 30V
Drain current: 0.32A
кількість в упаковці: 20 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.32A; Idm: 0.7A; 0.38W
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.38W
Polarisation: unipolar
Gate charge: 0.38nC
Case: X2-DFN0604-3
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 0.7A
Drain-source voltage: 30V
Drain current: 0.32A
кількість в упаковці: 20 шт
товар відсутній
| DMN31D5UFZ-7B |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150mA; Idm: 0.5A; 393mW
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 393mW
Polarisation: unipolar
Gate charge: 0.35nC
Case: X2-DFN0606-3
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 0.5A
Drain-source voltage: 30V
Drain current: 0.15A
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150mA; Idm: 0.5A; 393mW
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 393mW
Polarisation: unipolar
Gate charge: 0.35nC
Case: X2-DFN0606-3
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 0.5A
Drain-source voltage: 30V
Drain current: 0.15A
кількість в упаковці: 10000 шт
товар відсутній
| DMN31D6UT-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 350mA; Idm: 0.8A; 320mW; SOT523
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 2Ω
Type of transistor: N-MOSFET
Power dissipation: 0.32W
Polarisation: unipolar
Gate charge: 0.35nC
Case: SOT523
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 0.8A
Drain-source voltage: 30V
Drain current: 0.35A
кількість в упаковці: 10 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 350mA; Idm: 0.8A; 320mW; SOT523
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 2Ω
Type of transistor: N-MOSFET
Power dissipation: 0.32W
Polarisation: unipolar
Gate charge: 0.35nC
Case: SOT523
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 0.8A
Drain-source voltage: 30V
Drain current: 0.35A
кількість в упаковці: 10 шт
товар відсутній
| DMN3200U-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.2A; Idm: 9A; 650mW; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.2A
Pulsed drain current: 9A
Power dissipation: 0.65W
Case: SOT23-3
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.2A; Idm: 9A; 650mW; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.2A
Pulsed drain current: 9A
Power dissipation: 0.65W
Case: SOT23-3
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
на замовлення 3605 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.79 грн |
| 25+ | 12.72 грн |
| 100+ | 10.78 грн |
| 110+ | 9.39 грн |
| 300+ | 8.88 грн |
| 3000+ | 8.54 грн |
| DMN32D2LDF-7 |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 400mA; 280mW; SOT353
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.28W
Case: SOT353
Gate-source voltage: ±10V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common source
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 400mA; 280mW; SOT353
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.28W
Case: SOT353
Gate-source voltage: ±10V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common source
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
на замовлення 2000 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 14.86 грн |
| 35+ | 7.85 грн |
| 100+ | 6.02 грн |
| 195+ | 5.31 грн |
| 500+ | 5.05 грн |
| 525+ | 5.02 грн |
| 3000+ | 4.83 грн |
| DMN32D2LFB4-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; 350mW; X2-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Power dissipation: 0.35W
Case: X2-DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; 350mW; X2-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Power dissipation: 0.35W
Case: X2-DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| DMN32D4SDW-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A; 350mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.5A
Pulsed drain current: 4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 1.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A; 350mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.5A
Pulsed drain current: 4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 1.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
| DMN32D4SDW-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A; 350mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.5A
Pulsed drain current: 4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 1.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A; 350mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.5A
Pulsed drain current: 4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 1.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
| DMN3300UQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 8A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.6A
Pulsed drain current: 8A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 8A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.6A
Pulsed drain current: 8A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
| DMN33D8LT-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 115mA; 300mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.115A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 1.23nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 115mA; 300mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.115A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 1.23nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
| DMN3401LDW-13 |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 4A; 350mW
Type of transistor: N-MOSFET x2
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.35W
On-state resistance: 0.7Ω
Polarisation: unipolar
Gate charge: 1.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 4A
Drain current: 0.6A
Drain-source voltage: 30V
кількість в упаковці: 10000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 4A; 350mW
Type of transistor: N-MOSFET x2
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.35W
On-state resistance: 0.7Ω
Polarisation: unipolar
Gate charge: 1.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 4A
Drain current: 0.6A
Drain-source voltage: 30V
кількість в упаковці: 10000 шт
товар відсутній
| DMN3401LDW-7 |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 4A; 350mW
Type of transistor: N-MOSFET x2
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.35W
On-state resistance: 0.7Ω
Polarisation: unipolar
Gate charge: 1.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 4A
Drain current: 0.6A
Drain-source voltage: 30V
кількість в упаковці: 10 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 4A; 350mW
Type of transistor: N-MOSFET x2
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.35W
On-state resistance: 0.7Ω
Polarisation: unipolar
Gate charge: 1.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 4A
Drain current: 0.6A
Drain-source voltage: 30V
кількість в упаковці: 10 шт
товар відсутній
| DMN3404L-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3A; 0.72W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.082Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3A; 0.72W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.082Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 9605 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 18.58 грн |
| 38+ | 7.26 грн |
| 100+ | 6.21 грн |
| 185+ | 5.1 грн |
| 505+ | 4.82 грн |
| DMN3404LQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 30A; 1.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 30A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 30A; 1.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 30A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| DMN3730U-7 |
|
Виробник: DIODES INCORPORATED
DMN3730U-7 SMD N channel transistors
DMN3730U-7 SMD N channel transistors
на замовлення 1500 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 15.79 грн |
| 135+ | 7.44 грн |
| 375+ | 7.04 грн |
| DMN3730UFB-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Gate charge: 1.6nC
Polarisation: unipolar
Drain current: 730mA
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 0.73Ω
Pulsed drain current: 3A
Power dissipation: 0.69W
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Gate charge: 1.6nC
Polarisation: unipolar
Drain current: 730mA
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 0.73Ω
Pulsed drain current: 3A
Power dissipation: 0.69W
кількість в упаковці: 1 шт
товар відсутній
| DMN3730UFB4-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.75A; Idm: 10A; 0.45W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: 0.75A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 0.46Ω
Pulsed drain current: 10A
Power dissipation: 0.45W
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.75A; Idm: 10A; 0.45W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: 0.75A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 0.46Ω
Pulsed drain current: 10A
Power dissipation: 0.45W
кількість в упаковці: 3000 шт
товар відсутній
| DMN3730UFB4-7B |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW
Case: X2-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Gate charge: 1.6nC
Polarisation: unipolar
Drain current: 730mA
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 0.73Ω
Pulsed drain current: 3A
Power dissipation: 0.69W
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW
Case: X2-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Gate charge: 1.6nC
Polarisation: unipolar
Drain current: 730mA
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 0.73Ω
Pulsed drain current: 3A
Power dissipation: 0.69W
кількість в упаковці: 10000 шт
товар відсутній
| DMN3731U-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 700mA; Idm: 3A; 580mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.7A
Pulsed drain current: 3A
Power dissipation: 0.58W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.73Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 700mA; Idm: 3A; 580mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.7A
Pulsed drain current: 3A
Power dissipation: 0.58W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.73Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
| DMN3731U-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 700mA; Idm: 3A; 580mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.7A
Pulsed drain current: 3A
Power dissipation: 0.58W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.73Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 20 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 700mA; Idm: 3A; 580mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.7A
Pulsed drain current: 3A
Power dissipation: 0.58W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.73Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 20 шт
товар відсутній
| DMN3731UFB4-7B |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 900mA; Idm: 3A; 970mW
Mounting: SMD
Case: X2-DFN1006-3
Kind of package: reel; tape
Pulsed drain current: 3A
Drain-source voltage: 30V
Drain current: 0.9A
On-state resistance: 0.73Ω
Type of transistor: N-MOSFET
Power dissipation: 970mW
Polarisation: unipolar
Gate charge: 5.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 900mA; Idm: 3A; 970mW
Mounting: SMD
Case: X2-DFN1006-3
Kind of package: reel; tape
Pulsed drain current: 3A
Drain-source voltage: 30V
Drain current: 0.9A
On-state resistance: 0.73Ω
Type of transistor: N-MOSFET
Power dissipation: 970mW
Polarisation: unipolar
Gate charge: 5.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
кількість в упаковці: 10000 шт
товар відсутній
| DMN3900UFA-7B |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 520mA; Idm: 2.5A; 390mW
Mounting: SMD
Case: X2-DFN0806-3
Kind of package: reel; tape
Power dissipation: 0.39W
Drain-source voltage: 30V
Drain current: 520mA
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.7nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 2.5A
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 520mA; Idm: 2.5A; 390mW
Mounting: SMD
Case: X2-DFN0806-3
Kind of package: reel; tape
Power dissipation: 0.39W
Drain-source voltage: 30V
Drain current: 520mA
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.7nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 2.5A
кількість в упаковці: 10000 шт
товар відсутній
| DMN4008LFG-13 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Drain-source voltage: 40V
Drain current: 15.4A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 74nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Drain-source voltage: 40V
Drain current: 15.4A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 74nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
кількість в упаковці: 3000 шт
товар відсутній
| DMN4008LFG-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Drain-source voltage: 40V
Drain current: 15.4A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 74nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Drain-source voltage: 40V
Drain current: 15.4A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 74nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
кількість в упаковці: 2000 шт
товар відсутній
| DMN4010LK3-13 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.5A; Idm: 80A; 2.4W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 9.5A
Pulsed drain current: 80A
Power dissipation: 2.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.5A; Idm: 80A; 2.4W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 9.5A
Pulsed drain current: 80A
Power dissipation: 2.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
| DMN4020LFDE-13 |
|
Виробник: DIODES INCORPORATED
DMN4020LFDE-13 SMD N channel transistors
DMN4020LFDE-13 SMD N channel transistors
товар відсутній
| DMN4020LFDEQ-7 |
Виробник: DIODES INCORPORATED
DMN4020LFDEQ-7 SMD N channel transistors
DMN4020LFDEQ-7 SMD N channel transistors
товар відсутній
| DMN4026SK3-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 70A; 2.1W; TO252
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 18A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 21.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: SMD
Case: TO252
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 70A; 2.1W; TO252
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 18A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 21.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: SMD
Case: TO252
кількість в упаковці: 1 шт
товар відсутній
| DMN4026SSD-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.2A; Idm: 70A; 1.1W; SO8
Polarisation: unipolar
On-state resistance: 32mΩ
Kind of package: reel; tape
Drain current: 7.2A
Drain-source voltage: 40V
Case: SO8
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 1.1W
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.2A; Idm: 70A; 1.1W; SO8
Polarisation: unipolar
On-state resistance: 32mΩ
Kind of package: reel; tape
Drain current: 7.2A
Drain-source voltage: 40V
Case: SO8
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 1.1W
кількість в упаковці: 2500 шт
товар відсутній
| DMN4026SSDQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.2A; Idm: 70A; 1.1W; SO8
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 7.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: SMD
Case: SO8
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.2A; Idm: 70A; 1.1W; SO8
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 7.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: SMD
Case: SO8
кількість в упаковці: 2500 шт
товар відсутній
| DMN4027SSD-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.7A; Idm: 28A; 2.14W; SO8
Polarisation: unipolar
On-state resistance: 47mΩ
Kind of package: reel; tape
Drain current: 5.7A
Drain-source voltage: 40V
Case: SO8
Gate charge: 12.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 28A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 2.14W
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.7A; Idm: 28A; 2.14W; SO8
Polarisation: unipolar
On-state resistance: 47mΩ
Kind of package: reel; tape
Drain current: 5.7A
Drain-source voltage: 40V
Case: SO8
Gate charge: 12.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 28A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 2.14W
кількість в упаковці: 2500 шт
товар відсутній
| DMN4027SSDQ-13 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.7A; Idm: 28A; 2.14W; SO8
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 28A
Power dissipation: 2.14W
Gate charge: 12.9nC
Polarisation: unipolar
Drain current: 5.7A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SO8
On-state resistance: 47mΩ
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.7A; Idm: 28A; 2.14W; SO8
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 28A
Power dissipation: 2.14W
Gate charge: 12.9nC
Polarisation: unipolar
Drain current: 5.7A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SO8
On-state resistance: 47mΩ
кількість в упаковці: 2500 шт
товар відсутній
| DMN4031SSD-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Polarisation: unipolar
On-state resistance: 50mΩ
Kind of package: reel; tape
Drain current: 5.6A
Drain-source voltage: 40V
Case: SO8
Gate charge: 18.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 2.6W
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Polarisation: unipolar
On-state resistance: 50mΩ
Kind of package: reel; tape
Drain current: 5.6A
Drain-source voltage: 40V
Case: SO8
Gate charge: 18.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 2.6W
кількість в упаковці: 1 шт
товар відсутній
| DMN4031SSDQ-13 |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 5.6A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 18.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: SO8
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 5.6A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 18.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: SO8
кількість в упаковці: 1 шт
товар відсутній
| DMN4034SSD-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 24.8A; 2.14W; SO8
Polarisation: unipolar
On-state resistance: 59mΩ
Kind of package: reel; tape
Drain current: 5A
Drain-source voltage: 40V
Case: SO8
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24.8A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 2.14W
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 24.8A; 2.14W; SO8
Polarisation: unipolar
On-state resistance: 59mΩ
Kind of package: reel; tape
Drain current: 5A
Drain-source voltage: 40V
Case: SO8
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24.8A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 2.14W
кількість в упаковці: 2500 шт
товар відсутній
| DMN4036LK3-13 |
|
Виробник: DIODES INCORPORATED
DMN4036LK3-13 SMD N channel transistors
DMN4036LK3-13 SMD N channel transistors
на замовлення 2225 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 28.52 грн |
| 59+ | 17.34 грн |
| 160+ | 16.39 грн |
| DMN4040SK3-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; Idm: 50A; 8.9W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Pulsed drain current: 50A
Power dissipation: 8.9W
Gate charge: 18.6nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 54mΩ
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; Idm: 50A; 8.9W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Pulsed drain current: 50A
Power dissipation: 8.9W
Gate charge: 18.6nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 54mΩ
кількість в упаковці: 1 шт
товар відсутній
| DMN4060SVT-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 4.1A; 1.2W; TSOT26
Mounting: SMD
Power dissipation: 1.2W
Case: TSOT26
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 4.1A
Kind of channel: enhanced
Drain-source voltage: 45V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 62mΩ
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 4.1A; 1.2W; TSOT26
Mounting: SMD
Power dissipation: 1.2W
Case: TSOT26
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 4.1A
Kind of channel: enhanced
Drain-source voltage: 45V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 62mΩ
кількість в упаковці: 5 шт
товар відсутній
| DMN4468LSS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 50A; 1.52W; SO8
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 9A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.52W
Polarisation: unipolar
Gate charge: 18.85nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: SO8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 50A; 1.52W; SO8
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 9A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.52W
Polarisation: unipolar
Gate charge: 18.85nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: SO8
кількість в упаковці: 1 шт
товар відсутній
| DMN4800LSS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 50A; 1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 50A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 50A; 1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 50A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| DMN4800LSSL-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; Idm: 50A; 1.46W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Pulsed drain current: 50A
Power dissipation: 1.46W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; Idm: 50A; 1.46W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Pulsed drain current: 50A
Power dissipation: 1.46W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| DMN4800LSSQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 50A; 1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 50A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 50A; 1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 50A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| DMN53D0L-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; 540mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; 540mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
| DMN53D0L-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
на замовлення 2645 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 13.75 грн |
| 50+ | 5.55 грн |
| 100+ | 4.81 грн |
| 275+ | 3.65 грн |
| 750+ | 3.45 грн |
| DMN53D0LDW-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 360mA; 310mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.36A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 360mA; 310mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.36A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній