Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74667) > Сторінка 1116 з 1245

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DMNH10H028SCT DIODES INCORPORATED DMNH10H028SCT.pdf DMNH10H028SCT THT N channel transistors
товар відсутній
DMNH10H028SK3-13 DIODES INCORPORATED DMNH10H028SK3.pdf DMNH10H028SK3-13 SMD N channel transistors
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DMNH10H028SK3Q-13 DIODES INCORPORATED DMNH10H028SK3Q.pdf DMNH10H028SK3Q-13 SMD N channel transistors
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DMNH10H028SPS-13 DIODES INCORPORATED DMNH10H028SPS.pdf DMNH10H028SPS-13 SMD N channel transistors
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DMNH10H028SPSQ-13 DIODES INCORPORATED DMNH10H028SPSQ.pdf DMNH10H028SPSQ-13 SMD N channel transistors
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DMNH3010LK3-13 DIODES INCORPORATED DMNH3010LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10.6A; Idm: 100A; 3.2W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10.6A
Pulsed drain current: 100A
Power dissipation: 3.2W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
DMNH4005SPSQ-13 DIODES INCORPORATED DMNH4005SPSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 150A; 2.8W
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.8W
Polarisation: unipolar
Gate charge: 48nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Case: PowerDI5060-8
кількість в упаковці: 2500 шт
товар відсутній
DMNH4006SK3Q-13 DIODES INCORPORATED DMNH4006SK3Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 16A; Idm: 200A; 3.6W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Pulsed drain current: 200A
Power dissipation: 3.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
DMNH4006SPSQ-13 DIODES INCORPORATED DMNH4006SPSQ.pdf DMNH4006SPSQ-13 SMD N channel transistors
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DMNH4011SK3Q-13 DIODES INCORPORATED DMNH4011SK3Q.pdf DMNH4011SK3Q-13 SMD N channel transistors
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DMNH4011SPS-13 DIODES INCORPORATED DMNH4011SPS.pdf DMNH4011SPS-13 SMD N channel transistors
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DMNH4011SPSQ-13 DIODES INCORPORATED DMNH4011SPSQ.pdf DMNH4011SPSQ-13 SMD N channel transistors
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DMNH4015SSD-13 DMNH4015SSD-13 DIODES INCORPORATED DMNH4015SSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.8A
Pulsed drain current: 80A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
DMNH4015SSDQ-13 DMNH4015SSDQ-13 DIODES INCORPORATED DMNH4015SSDQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.8A
Pulsed drain current: 80A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
DMNH4026SSD-13 DMNH4026SSD-13 DIODES INCORPORATED DMNH4026SSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.3A; Idm: 60A; 2W; SO8
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 2W
Gate charge: 19.1nC
Polarisation: unipolar
Drain current: 5.3A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SO8
On-state resistance: 32mΩ
кількість в упаковці: 2500 шт
товар відсутній
DMNH4026SSDQ-13 DMNH4026SSDQ-13 DIODES INCORPORATED DMNH4026SSDQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.3A; Idm: 60A; 2W; SO8
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 2W
Gate charge: 19.1nC
Polarisation: unipolar
Drain current: 5.3A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Case: SO8
On-state resistance: 32mΩ
Gate-source voltage: ±20V
кількість в упаковці: 2500 шт
товар відсутній
DMNH45M7SCT DMNH45M7SCT DIODES INCORPORATED Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 155A; Idm: 200A; 96W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 155A
Pulsed drain current: 200A
Power dissipation: 96W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 36.1nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMNH6008SCT DMNH6008SCT DIODES INCORPORATED DMNH6008SCT.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; Idm: 200A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Pulsed drain current: 200A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 100 шт:
термін постачання 7-14 дні (днів)
3+99.16 грн
10+ 84.69 грн
13+ 77.22 грн
35+ 73.07 грн
Мінімальне замовлення: 3
DMNH6008SCTQ DIODES INCORPORATED DMNH6008SCTQ.pdf DMNH6008SCTQ SMD N channel transistors
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DMNH6008SPS-13 DIODES INCORPORATED DMNH6008SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 352A; 3.3W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 352A
Power dissipation: 3.3W
Gate charge: 40.1nC
Polarisation: unipolar
Drain current: 11.7A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
On-state resistance: 8mΩ
Gate-source voltage: ±20V
кількість в упаковці: 2500 шт
товар відсутній
DMNH6008SPSQ-13 DIODES INCORPORATED DMNH6008SPSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 352A; 3.3W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 352A
Power dissipation: 3.3W
Gate charge: 40.1nC
Polarisation: unipolar
Drain current: 11.7A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
On-state resistance: 8mΩ
Gate-source voltage: ±20V
кількість в упаковці: 2500 шт
товар відсутній
DMNH6009SPS-13 DIODES INCORPORATED DMNH6009SPS-13 SMD N channel transistors
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DMNH6010SCTB-13 DIODES INCORPORATED DMNH6010SCTB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 94A; Idm: 532A; 5W; TO263AB
Mounting: SMD
Case: TO263AB
Kind of package: reel; tape
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Pulsed drain current: 532A
Power dissipation: 5W
Gate charge: 46nC
Polarisation: unipolar
Drain current: 94A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
кількість в упаковці: 800 шт
товар відсутній
DMNH6011LK3-13 DIODES INCORPORATED DMNH6011LK3.pdf DMNH6011LK3-13 SMD N channel transistors
товар відсутній
DMNH6012LK3Q-13 DIODES INCORPORATED DMNH6012LK3Q.pdf DMNH6012LK3Q-13 SMD N channel transistors
товар відсутній
DMNH6012SPS-13 DIODES INCORPORATED DMNH6012SPS.pdf DMNH6012SPS-13 SMD N channel transistors
товар відсутній
DMNH6012SPSQ-13 DIODES INCORPORATED DMNH6012SPSQ.pdf DMNH6012SPSQ-13 SMD N channel transistors
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DMNH6021SK3-13 DIODES INCORPORATED DMNH6021SK3-13 SMD N channel transistors
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DMNH6021SK3Q-13 DIODES INCORPORATED DMNH6021SK3Q.pdf DMNH6021SK3Q-13 SMD N channel transistors
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DMNH6021SPD-13 DIODES INCORPORATED DMNH6021SPD-13 Multi channel transistors
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DMNH6021SPDQ-13 DIODES INCORPORATED DMNH6021SPDQ.pdf DMNH6021SPDQ-13 SMD N channel transistors
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DMNH6021SPDW-13 DIODES INCORPORATED DMNH6021SPDW-13 SMD N channel transistors
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DMNH6021SPSQ-13 DIODES INCORPORATED DMNH6021SPSQ-13 SMD N channel transistors
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DMNH6022SSD-13 DMNH6022SSD-13 DIODES INCORPORATED DMNH6022SSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.9A; Idm: 45A; 2.1W; SO8
Kind of package: reel; tape
Type of transistor: N-MOSFET
Case: SO8
On-state resistance: 30mΩ
Gate-source voltage: ±20V
Mounting: SMD
Pulsed drain current: 45A
Power dissipation: 2.1W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 5.9A
Kind of channel: enhanced
Drain-source voltage: 60V
кількість в упаковці: 2500 шт
товар відсутній
DMNH6022SSDQ-13 DMNH6022SSDQ-13 DIODES INCORPORATED DMNH6022SSDQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.9A; Idm: 45A; 2.1W; SO8
Kind of package: reel; tape
Type of transistor: N-MOSFET
Case: SO8
On-state resistance: 30mΩ
Gate-source voltage: ±20V
Mounting: SMD
Pulsed drain current: 45A
Power dissipation: 2.1W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 5.9A
Kind of channel: enhanced
Drain-source voltage: 60V
кількість в упаковці: 2500 шт
товар відсутній
DMNH6042SK3-13 DIODES INCORPORATED DMNH6042SK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 40A; 3.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 40A
Power dissipation: 3.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
DMNH6042SK3Q-13 DIODES INCORPORATED DMNH6042SK3Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 40A; 3.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 40A
Power dissipation: 3.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
DMNH6042SPD-13 DIODES INCORPORATED DMNH6042SPD-13 SMD N channel transistors
товар відсутній
DMNH6042SPDQ-13 DIODES INCORPORATED DMNH6042SPDQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMNH6042SPS-13 DIODES INCORPORATED DMNH6042SPS.pdf DMNH6042SPS-13 SMD N channel transistors
товар відсутній
DMNH6042SPSQ-13 DIODES INCORPORATED DMNH6042SPSQ.pdf DMNH6042SPSQ-13 SMD N channel transistors
товар відсутній
DMNH6042SSD-13 DIODES INCORPORATED DMNH6042SSD-13 Multi channel transistors
товар відсутній
DMNH6042SSDQ-13 DIODES INCORPORATED DMNH6042SSDQ.pdf DMNH6042SSDQ-13 SMD N channel transistors
товар відсутній
DMNH6065SPDW-13 DIODES INCORPORATED DMNH6065SPDW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 108A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 108A
Power dissipation: 2.4W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 79mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
DMNH6069SFVW-13 DIODES INCORPORATED DMNH6069SFVW-13 SMD N channel transistors
товар відсутній
DMNH6069SFVW-7 DIODES INCORPORATED DMNH6069SFVW-7 SMD N channel transistors
товар відсутній
DMP1005UFDF-13 DIODES INCORPORATED DMP1005UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -10.3A
On-state resistance: 18.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -70A
Case: U-DFN2020-6
кількість в упаковці: 10000 шт
товар відсутній
DMP1005UFDF-7 DIODES INCORPORATED DMP1005UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -10.3A
On-state resistance: 18.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -70A
Case: U-DFN2020-6
кількість в упаковці: 3000 шт
товар відсутній
DMP1007UCB9-7 DIODES INCORPORATED DMP1007UCB9.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -7.8A; Idm: -80A; 1.53W
Case: U-WLB1515-9
Mounting: SMD
Kind of package: reel; tape
Drain current: -7.8A
On-state resistance: 9.1mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.53W
Polarisation: unipolar
Gate charge: 8.2nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -80A
Drain-source voltage: -8V
кількість в упаковці: 3000 шт
товар відсутній
DMP1009UFDF-13 DIODES INCORPORATED DMP1009UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -12A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Kind of package: reel; tape
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -70A
Case: U-DFN2020-6
кількість в упаковці: 10000 шт
товар відсутній
DMP1009UFDF-7 DIODES INCORPORATED DMP1009UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -12A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Kind of package: reel; tape
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -70A
Case: U-DFN2020-6
кількість в упаковці: 1 шт
товар відсутній
DMP1009UFDFQ-7 DIODES INCORPORATED DMP1009UFDFQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -12A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Kind of package: reel; tape
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -70A
Case: U-DFN2020-6
кількість в упаковці: 3000 шт
товар відсутній
DMP1011LFV-13 DIODES INCORPORATED DMP1011LFV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10A; Idm: -70A; 2.16W
Mounting: SMD
Power dissipation: 2.16W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.5nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -70A
Case: PowerDI3333-8
Drain-source voltage: -12V
Drain current: -10A
On-state resistance: 18.6mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
DMP1011LFV-7 DIODES INCORPORATED DMP1011LFV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10A; Idm: -70A; 2.16W
Mounting: SMD
Power dissipation: 2.16W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.5nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -70A
Case: PowerDI3333-8
Drain-source voltage: -12V
Drain current: -10A
On-state resistance: 18.6mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 2000 шт
товар відсутній
DMP1011UCB9-7 DIODES INCORPORATED DMP1011UCB9.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -6A; Idm: -50A; 1.57W
Mounting: SMD
Power dissipation: 1.57W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.5nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -50A
Case: U-WLB1515-9
Drain-source voltage: -8V
Drain current: -6A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
DMP1012UCB9-7 DIODES INCORPORATED DMP1012UCB9.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -6A; Idm: -50A; 1.57W
Mounting: SMD
Power dissipation: 1.57W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.5nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -50A
Case: U-WLB1515-9
Drain-source voltage: -8V
Drain current: -6A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
DMP1012UFDF-13 DIODES INCORPORATED DMP1012UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Gate charge: 31nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -55A
Drain current: -12.6A
On-state resistance: 40mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.36W
Polarisation: unipolar
Drain-source voltage: -12V
кількість в упаковці: 10000 шт
товар відсутній
DMP1012UFDF-7 DIODES INCORPORATED DMP1012UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Gate charge: 31nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -55A
Drain current: -12.6A
On-state resistance: 40mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.36W
Polarisation: unipolar
Drain-source voltage: -12V
кількість в упаковці: 1 шт
товар відсутній
DMP1022UFDEQ-7 DIODES INCORPORATED DMP1022UFDEQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -9A; Idm: -90A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Pulsed drain current: -90A
Drain-source voltage: -12V
Drain current: -9A
On-state resistance: 0.16Ω
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 42.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
кількість в упаковці: 3000 шт
товар відсутній
DMP1022UFDF-13 DIODES INCORPORATED DMP1022UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Pulsed drain current: -90A
Drain-source voltage: -12V
Drain current: -8.8A
On-state resistance: 32mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 48.3nC
Kind of channel: enhanced
Gate-source voltage: ±8V
кількість в упаковці: 10000 шт
товар відсутній
DMNH10H028SCT DMNH10H028SCT.pdf
Виробник: DIODES INCORPORATED
DMNH10H028SCT THT N channel transistors
товар відсутній
DMNH10H028SK3-13 DMNH10H028SK3.pdf
Виробник: DIODES INCORPORATED
DMNH10H028SK3-13 SMD N channel transistors
товар відсутній
DMNH10H028SK3Q-13 DMNH10H028SK3Q.pdf
Виробник: DIODES INCORPORATED
DMNH10H028SK3Q-13 SMD N channel transistors
товар відсутній
DMNH10H028SPS-13 DMNH10H028SPS.pdf
Виробник: DIODES INCORPORATED
DMNH10H028SPS-13 SMD N channel transistors
товар відсутній
DMNH10H028SPSQ-13 DMNH10H028SPSQ.pdf
Виробник: DIODES INCORPORATED
DMNH10H028SPSQ-13 SMD N channel transistors
товар відсутній
DMNH3010LK3-13 DMNH3010LK3.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10.6A; Idm: 100A; 3.2W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10.6A
Pulsed drain current: 100A
Power dissipation: 3.2W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
DMNH4005SPSQ-13 DMNH4005SPSQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 150A; 2.8W
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.8W
Polarisation: unipolar
Gate charge: 48nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Case: PowerDI5060-8
кількість в упаковці: 2500 шт
товар відсутній
DMNH4006SK3Q-13 DMNH4006SK3Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 16A; Idm: 200A; 3.6W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Pulsed drain current: 200A
Power dissipation: 3.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
DMNH4006SPSQ-13 DMNH4006SPSQ.pdf
Виробник: DIODES INCORPORATED
DMNH4006SPSQ-13 SMD N channel transistors
товар відсутній
DMNH4011SK3Q-13 DMNH4011SK3Q.pdf
Виробник: DIODES INCORPORATED
DMNH4011SK3Q-13 SMD N channel transistors
товар відсутній
DMNH4011SPS-13 DMNH4011SPS.pdf
Виробник: DIODES INCORPORATED
DMNH4011SPS-13 SMD N channel transistors
товар відсутній
DMNH4011SPSQ-13 DMNH4011SPSQ.pdf
Виробник: DIODES INCORPORATED
DMNH4011SPSQ-13 SMD N channel transistors
товар відсутній
DMNH4015SSD-13 DMNH4015SSD.pdf
DMNH4015SSD-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.8A
Pulsed drain current: 80A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
DMNH4015SSDQ-13 DMNH4015SSDQ.pdf
DMNH4015SSDQ-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.8A
Pulsed drain current: 80A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
DMNH4026SSD-13 DMNH4026SSD.pdf
DMNH4026SSD-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.3A; Idm: 60A; 2W; SO8
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 2W
Gate charge: 19.1nC
Polarisation: unipolar
Drain current: 5.3A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SO8
On-state resistance: 32mΩ
кількість в упаковці: 2500 шт
товар відсутній
DMNH4026SSDQ-13 DMNH4026SSDQ.pdf
DMNH4026SSDQ-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.3A; Idm: 60A; 2W; SO8
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 2W
Gate charge: 19.1nC
Polarisation: unipolar
Drain current: 5.3A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Case: SO8
On-state resistance: 32mΩ
Gate-source voltage: ±20V
кількість в упаковці: 2500 шт
товар відсутній
DMNH45M7SCT
DMNH45M7SCT
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 155A; Idm: 200A; 96W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 155A
Pulsed drain current: 200A
Power dissipation: 96W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 36.1nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMNH6008SCT DMNH6008SCT.pdf
DMNH6008SCT
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; Idm: 200A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Pulsed drain current: 200A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 100 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
3+99.16 грн
10+ 84.69 грн
13+ 77.22 грн
35+ 73.07 грн
Мінімальне замовлення: 3
DMNH6008SCTQ DMNH6008SCTQ.pdf
Виробник: DIODES INCORPORATED
DMNH6008SCTQ SMD N channel transistors
товар відсутній
DMNH6008SPS-13 DMNH6008SPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 352A; 3.3W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 352A
Power dissipation: 3.3W
Gate charge: 40.1nC
Polarisation: unipolar
Drain current: 11.7A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
On-state resistance: 8mΩ
Gate-source voltage: ±20V
кількість в упаковці: 2500 шт
товар відсутній
DMNH6008SPSQ-13 DMNH6008SPSQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 352A; 3.3W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 352A
Power dissipation: 3.3W
Gate charge: 40.1nC
Polarisation: unipolar
Drain current: 11.7A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
On-state resistance: 8mΩ
Gate-source voltage: ±20V
кількість в упаковці: 2500 шт
товар відсутній
DMNH6009SPS-13
Виробник: DIODES INCORPORATED
DMNH6009SPS-13 SMD N channel transistors
товар відсутній
DMNH6010SCTB-13 DMNH6010SCTB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 94A; Idm: 532A; 5W; TO263AB
Mounting: SMD
Case: TO263AB
Kind of package: reel; tape
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Pulsed drain current: 532A
Power dissipation: 5W
Gate charge: 46nC
Polarisation: unipolar
Drain current: 94A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
кількість в упаковці: 800 шт
товар відсутній
DMNH6011LK3-13 DMNH6011LK3.pdf
Виробник: DIODES INCORPORATED
DMNH6011LK3-13 SMD N channel transistors
товар відсутній
DMNH6012LK3Q-13 DMNH6012LK3Q.pdf
Виробник: DIODES INCORPORATED
DMNH6012LK3Q-13 SMD N channel transistors
товар відсутній
DMNH6012SPS-13 DMNH6012SPS.pdf
Виробник: DIODES INCORPORATED
DMNH6012SPS-13 SMD N channel transistors
товар відсутній
DMNH6012SPSQ-13 DMNH6012SPSQ.pdf
Виробник: DIODES INCORPORATED
DMNH6012SPSQ-13 SMD N channel transistors
товар відсутній
DMNH6021SK3-13
Виробник: DIODES INCORPORATED
DMNH6021SK3-13 SMD N channel transistors
товар відсутній
DMNH6021SK3Q-13 DMNH6021SK3Q.pdf
Виробник: DIODES INCORPORATED
DMNH6021SK3Q-13 SMD N channel transistors
товар відсутній
DMNH6021SPD-13
Виробник: DIODES INCORPORATED
DMNH6021SPD-13 Multi channel transistors
товар відсутній
DMNH6021SPDQ-13 DMNH6021SPDQ.pdf
Виробник: DIODES INCORPORATED
DMNH6021SPDQ-13 SMD N channel transistors
товар відсутній
DMNH6021SPDW-13
Виробник: DIODES INCORPORATED
DMNH6021SPDW-13 SMD N channel transistors
товар відсутній
DMNH6021SPSQ-13
Виробник: DIODES INCORPORATED
DMNH6021SPSQ-13 SMD N channel transistors
товар відсутній
DMNH6022SSD-13 DMNH6022SSD.pdf
DMNH6022SSD-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.9A; Idm: 45A; 2.1W; SO8
Kind of package: reel; tape
Type of transistor: N-MOSFET
Case: SO8
On-state resistance: 30mΩ
Gate-source voltage: ±20V
Mounting: SMD
Pulsed drain current: 45A
Power dissipation: 2.1W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 5.9A
Kind of channel: enhanced
Drain-source voltage: 60V
кількість в упаковці: 2500 шт
товар відсутній
DMNH6022SSDQ-13 DMNH6022SSDQ.pdf
DMNH6022SSDQ-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.9A; Idm: 45A; 2.1W; SO8
Kind of package: reel; tape
Type of transistor: N-MOSFET
Case: SO8
On-state resistance: 30mΩ
Gate-source voltage: ±20V
Mounting: SMD
Pulsed drain current: 45A
Power dissipation: 2.1W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 5.9A
Kind of channel: enhanced
Drain-source voltage: 60V
кількість в упаковці: 2500 шт
товар відсутній
DMNH6042SK3-13 DMNH6042SK3.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 40A; 3.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 40A
Power dissipation: 3.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
DMNH6042SK3Q-13 DMNH6042SK3Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 40A; 3.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 40A
Power dissipation: 3.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
DMNH6042SPD-13
Виробник: DIODES INCORPORATED
DMNH6042SPD-13 SMD N channel transistors
товар відсутній
DMNH6042SPDQ-13 DMNH6042SPDQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMNH6042SPS-13 DMNH6042SPS.pdf
Виробник: DIODES INCORPORATED
DMNH6042SPS-13 SMD N channel transistors
товар відсутній
DMNH6042SPSQ-13 DMNH6042SPSQ.pdf
Виробник: DIODES INCORPORATED
DMNH6042SPSQ-13 SMD N channel transistors
товар відсутній
DMNH6042SSD-13
Виробник: DIODES INCORPORATED
DMNH6042SSD-13 Multi channel transistors
товар відсутній
DMNH6042SSDQ-13 DMNH6042SSDQ.pdf
Виробник: DIODES INCORPORATED
DMNH6042SSDQ-13 SMD N channel transistors
товар відсутній
DMNH6065SPDW-13 DMNH6065SPDW.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 108A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 108A
Power dissipation: 2.4W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 79mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
DMNH6069SFVW-13
Виробник: DIODES INCORPORATED
DMNH6069SFVW-13 SMD N channel transistors
товар відсутній
DMNH6069SFVW-7
Виробник: DIODES INCORPORATED
DMNH6069SFVW-7 SMD N channel transistors
товар відсутній
DMP1005UFDF-13 DMP1005UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -10.3A
On-state resistance: 18.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -70A
Case: U-DFN2020-6
кількість в упаковці: 10000 шт
товар відсутній
DMP1005UFDF-7 DMP1005UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -10.3A
On-state resistance: 18.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -70A
Case: U-DFN2020-6
кількість в упаковці: 3000 шт
товар відсутній
DMP1007UCB9-7 DMP1007UCB9.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -7.8A; Idm: -80A; 1.53W
Case: U-WLB1515-9
Mounting: SMD
Kind of package: reel; tape
Drain current: -7.8A
On-state resistance: 9.1mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.53W
Polarisation: unipolar
Gate charge: 8.2nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -80A
Drain-source voltage: -8V
кількість в упаковці: 3000 шт
товар відсутній
DMP1009UFDF-13 DMP1009UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -12A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Kind of package: reel; tape
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -70A
Case: U-DFN2020-6
кількість в упаковці: 10000 шт
товар відсутній
DMP1009UFDF-7 DMP1009UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -12A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Kind of package: reel; tape
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -70A
Case: U-DFN2020-6
кількість в упаковці: 1 шт
товар відсутній
DMP1009UFDFQ-7 DMP1009UFDFQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -12A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Kind of package: reel; tape
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -70A
Case: U-DFN2020-6
кількість в упаковці: 3000 шт
товар відсутній
DMP1011LFV-13 DMP1011LFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10A; Idm: -70A; 2.16W
Mounting: SMD
Power dissipation: 2.16W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.5nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -70A
Case: PowerDI3333-8
Drain-source voltage: -12V
Drain current: -10A
On-state resistance: 18.6mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
DMP1011LFV-7 DMP1011LFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10A; Idm: -70A; 2.16W
Mounting: SMD
Power dissipation: 2.16W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.5nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -70A
Case: PowerDI3333-8
Drain-source voltage: -12V
Drain current: -10A
On-state resistance: 18.6mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 2000 шт
товар відсутній
DMP1011UCB9-7 DMP1011UCB9.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -6A; Idm: -50A; 1.57W
Mounting: SMD
Power dissipation: 1.57W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.5nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -50A
Case: U-WLB1515-9
Drain-source voltage: -8V
Drain current: -6A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
DMP1012UCB9-7 DMP1012UCB9.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -6A; Idm: -50A; 1.57W
Mounting: SMD
Power dissipation: 1.57W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.5nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -50A
Case: U-WLB1515-9
Drain-source voltage: -8V
Drain current: -6A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
DMP1012UFDF-13 DMP1012UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Gate charge: 31nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -55A
Drain current: -12.6A
On-state resistance: 40mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.36W
Polarisation: unipolar
Drain-source voltage: -12V
кількість в упаковці: 10000 шт
товар відсутній
DMP1012UFDF-7 DMP1012UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Gate charge: 31nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -55A
Drain current: -12.6A
On-state resistance: 40mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.36W
Polarisation: unipolar
Drain-source voltage: -12V
кількість в упаковці: 1 шт
товар відсутній
DMP1022UFDEQ-7 DMP1022UFDEQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -9A; Idm: -90A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Pulsed drain current: -90A
Drain-source voltage: -12V
Drain current: -9A
On-state resistance: 0.16Ω
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 42.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
кількість в упаковці: 3000 шт
товар відсутній
DMP1022UFDF-13 DMP1022UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Pulsed drain current: -90A
Drain-source voltage: -12V
Drain current: -8.8A
On-state resistance: 32mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 48.3nC
Kind of channel: enhanced
Gate-source voltage: ±8V
кількість в упаковці: 10000 шт
товар відсутній
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