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DMN2040U-13 DIODES INCORPORATED DMN2040U.pdf DMN2040U-13 SMD N channel transistors
товар відсутній
DMN2040U-7 DIODES INCORPORATED DMN2040U.pdf DMN2040U-7 SMD N channel transistors
товар відсутній
DMN2041L-7 DMN2041L-7 DIODES INCORPORATED DMN2041L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.5A; Idm: 30A; 780mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.5A
Pulsed drain current: 30A
Power dissipation: 0.78W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 15.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
DMN2041LSD-13 DMN2041LSD-13 DIODES INCORPORATED ds31964.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.92A; Idm: 30A; 1.16W; SO8
Polarisation: unipolar
On-state resistance: 41mΩ
Kind of package: reel; tape
Drain current: 4.92A
Drain-source voltage: 20V
Case: SO8
Gate charge: 15.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 1.16W
кількість в упаковці: 1 шт
товар відсутній
DMN2041UFDB-7 DIODES INCORPORATED DMN2041UFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 20A; 2.2W
Mounting: SMD
Case: U-DFN2020-6
Pulsed drain current: 20A
Drain-source voltage: 20V
Drain current: 4.9A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±12V
кількість в упаковці: 3000 шт
товар відсутній
DMN2044UCB4-7 DIODES INCORPORATED DMN2044UCB4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 16A; 1.18W
Mounting: SMD
Drain current: 3.6A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.18W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 16A
Case: U-WLB1010-4
Drain-source voltage: 20V
кількість в упаковці: 1 шт
товар відсутній
DMN2046U-13 DMN2046U-13 DIODES INCORPORATED DMN2046U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.7A; Idm: 18A; 1.26W; SOT23
Kind of package: reel; tape
Pulsed drain current: 18A
Power dissipation: 1.26W
Gate charge: 3.8nC
Polarisation: unipolar
Drain current: 2.7A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Case: SOT23
On-state resistance: 0.11Ω
Gate-source voltage: ±12V
Mounting: SMD
кількість в упаковці: 10000 шт
товар відсутній
DMN2046U-7 DMN2046U-7 DIODES INCORPORATED DMN2046U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.7A; 0.76W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.7A
Power dissipation: 0.76W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
на замовлення 1655 шт:
термін постачання 7-14 дні (днів)
20+15.14 грн
50+ 5.71 грн
100+ 4.86 грн
240+ 4.12 грн
660+ 3.9 грн
Мінімальне замовлення: 20
DMN2050L-7 DMN2050L-7 DIODES INCORPORATED DMN2050L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.9A; 1.4W; SOT23
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±12V
Case: SOT23
On-state resistance: 0.1Ω
Power dissipation: 1.4W
Polarisation: unipolar
Drain current: 5.9A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
DMN2050LFDB-13 DIODES INCORPORATED DMN2050LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 25A; 900mW
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 25A
Mounting: SMD
Case: U-DFN2020-6
кількість в упаковці: 10000 шт
товар відсутній
DMN2050LFDB-7 DIODES INCORPORATED DMN2050LFDB.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.1A; 0.73W; U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±12V
Case: U-DFN2020-6
On-state resistance: 55mΩ
Power dissipation: 0.73W
Polarisation: unipolar
Drain current: 4.1A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
кількість в упаковці: 1 шт
товар відсутній
DMN2053U-13 DMN2053U-13 DIODES INCORPORATED DMN2053U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 0.8W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.4A
Pulsed drain current: 22A
Power dissipation: 0.8W
Case: SOT23-3
Gate-source voltage: ±12V
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
DMN2053U-7 DMN2053U-7 DIODES INCORPORATED DMN2053U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 1.3W; SOT23
Power dissipation: 1.3W
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Drain-source voltage: 20V
Drain current: 5.4A
On-state resistance: 91mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 4.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 22A
кількість в упаковці: 5 шт
товар відсутній
DMN2053UVT-7 DMN2053UVT-7 DIODES INCORPORATED DMN2053UVT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; Idm: 22A; 1.1W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Pulsed drain current: 22A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
DMN2053UW-7 DMN2053UW-7 DIODES INCORPORATED DMN2053UW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 1.3W; SOT23
Power dissipation: 1.3W
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Drain-source voltage: 20V
Drain current: 5.4A
On-state resistance: 91mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 4.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 22A
кількість в упаковці: 5 шт
товар відсутній
DMN2053UWQ-7 DMN2053UWQ-7 DIODES INCORPORATED DMN2053UWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; Idm: 20A; 0.47W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
Pulsed drain current: 20A
Power dissipation: 0.47W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 5 шт
товар відсутній
DMN2055U-13 DMN2055U-13 DIODES INCORPORATED DMN2055U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
DMN2055U-7 DMN2055U-7 DIODES INCORPORATED DMN2055U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
DMN2056U-13 DMN2056U-13 DIODES INCORPORATED DMN2056U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 22A; 940mW; SOT23
Polarisation: unipolar
Power dissipation: 0.94W
Kind of package: reel; tape
Gate charge: 4.3nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 22A
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
Drain current: 3.2A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 10000 шт
товар відсутній
DMN2056U-7 DMN2056U-7 DIODES INCORPORATED DMN2056U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.94W; SOT23
Polarisation: unipolar
Power dissipation: 0.94W
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
Drain current: 3.7A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 3025 шт:
термін постачання 7-14 дні (днів)
10+29.73 грн
13+ 22.04 грн
15+ 18.03 грн
50+ 12.08 грн
100+ 10.27 грн
143+ 7.14 грн
391+ 6.75 грн
Мінімальне замовлення: 10
DMN2058U-13 DMN2058U-13 DIODES INCORPORATED DMN2058U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; Idm: 24A; 1.13W; SOT23
Case: SOT23
Drain-source voltage: 20V
Drain current: 3.7A
On-state resistance: 91mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.13W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 24A
Mounting: SMD
кількість в упаковці: 10000 шт
товар відсутній
DMN2058U-7 DMN2058U-7 DIODES INCORPORATED DMN2058U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.3A; 0.74W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.3A
Power dissipation: 0.74W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
на замовлення 2500 шт:
термін постачання 7-14 дні (днів)
25+13.75 грн
30+ 8.96 грн
100+ 7.63 грн
160+ 6.28 грн
440+ 5.94 грн
Мінімальне замовлення: 25
DMN2058UW-13 DMN2058UW-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3A; Idm: 20A; 700mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3A
Pulsed drain current: 20A
Power dissipation: 0.7W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
DMN2065UW-7 DMN2065UW-7 DIODES INCORPORATED DMN2065UW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.6A; Idm: 30A; 700mW; SOT323
Mounting: SMD
Kind of package: reel; tape
Gate charge: 5.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Drain-source voltage: 20V
Drain current: 2.6A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 0.7W
Case: SOT323
Polarisation: unipolar
кількість в упаковці: 5 шт
товар відсутній
DMN2065UWQ-7 DMN2065UWQ-7 DIODES INCORPORATED DMN2065UWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.6A; Idm: 30A; 700mW; SOT323
Mounting: SMD
Kind of package: reel; tape
Gate charge: 5.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Drain-source voltage: 20V
Drain current: 2.6A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 0.7W
Case: SOT323
Polarisation: unipolar
кількість в упаковці: 5 шт
товар відсутній
DMN2075UDW-7 DMN2075UDW-7 DIODES INCORPORATED DMN2075UDW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 20A; 580mW; SOT363
Pulsed drain current: 20A
Power dissipation: 0.58W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 2.5A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SOT363
On-state resistance: 0.1Ω
Mounting: SMD
кількість в упаковці: 5 шт
товар відсутній
DMN2080UCB4-7 DIODES INCORPORATED DMN2080UCB4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 8A; 1.25W
Mounting: SMD
Case: X2-WLB0808-4
Kind of package: reel; tape
Pulsed drain current: 8A
Drain-source voltage: 20V
Drain current: 3.2A
On-state resistance: 0.115Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 7.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
товар відсутній
DMN2100UDM-7 DMN2100UDM-7 DIODES INCORPORATED DMN2100UDM.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.6W; SOT26
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT26
Drain current: 2.5A
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
On-state resistance: 0.13Ω
Type of transistor: N-MOSFET
Power dissipation: 0.6W
кількість в упаковці: 1 шт
товар відсутній
DMN21D2UFB-7 DIODES INCORPORATED DMN21D2UFB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: X1-DFN1006-3
Drain current: 0.7A
Gate charge: 930pC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 1A
Mounting: SMD
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 570mW
кількість в упаковці: 10 шт
товар відсутній
DMN21D2UFB-7B DIODES INCORPORATED DMN21D2UFB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: X1-DFN1006-3
Drain current: 0.7A
Gate charge: 930pC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 1A
Mounting: SMD
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 570mW
кількість в упаковці: 10000 шт
товар відсутній
DMN2230U-7 DMN2230U-7 DIODES INCORPORATED DMN2230U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Power dissipation: 0.6W
Polarisation: unipolar
Drain current: 2A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.23Ω
Mounting: SMD
кількість в упаковці: 5 шт
на замовлення 2549 шт:
термін постачання 7-14 дні (днів)
20+15.14 грн
25+ 11.83 грн
100+ 10.09 грн
115+ 8.95 грн
310+ 8.46 грн
Мінімальне замовлення: 20
DMN2230UQ-13 DMN2230UQ-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 7A; 600mW; SOT23
Pulsed drain current: 7A
Power dissipation: 0.6W
Gate charge: 2.3nC
Polarisation: unipolar
Drain current: 2A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.23Ω
Mounting: SMD
кількість в упаковці: 10000 шт
товар відсутній
DMN2230UQ-7 DMN2230UQ-7 DIODES INCORPORATED DMN2230UQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Power dissipation: 0.6W
Polarisation: unipolar
Drain current: 2A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.11Ω
Mounting: SMD
кількість в упаковці: 5 шт
на замовлення 3355 шт:
термін постачання 7-14 дні (днів)
20+15.79 грн
25+ 12.72 грн
100+ 10.87 грн
115+ 8.9 грн
310+ 8.41 грн
Мінімальне замовлення: 20
DMN2250UFB-7B DIODES INCORPORATED DMN2250UFB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.03A; Idm: 6A; 300mW
Mounting: SMD
Case: X1-DFN1006-3
Kind of package: reel; tape
Power dissipation: 0.3W
Drain-source voltage: 20V
Drain current: 1.03A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 3.1nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6A
кількість в упаковці: 10000 шт
товар відсутній
DMN2300U-7 DMN2300U-7 DIODES INCORPORATED DMN2300U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.01A; Idm: 11A; 550mW; SOT23
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 11A
Gate charge: 1.6nC
Case: SOT23
Drain-source voltage: 20V
Drain current: 1.01A
On-state resistance: 0.36Ω
Type of transistor: N-MOSFET
Power dissipation: 0.55W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
DMN2300UFB-7B DIODES INCORPORATED DMN2300UFB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 940mA; Idm: 8A; 1.2W
Mounting: SMD
Case: X1-DFN1006-3
Drain-source voltage: 20V
Drain current: 0.94A
On-state resistance: 0.36Ω
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 0.89nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 8A
кількість в упаковці: 10000 шт
товар відсутній
DMN2300UFB4-7B DMN2300UFB4-7B DIODES INCORPORATED DMN2300UFB4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.96A; 0.5W; X1-DFN1006-3
Features of semiconductor devices: ESD protected gate
Mounting: SMD
Case: X1-DFN1006-3
Drain-source voltage: 20V
Drain current: 0.96A
On-state resistance: 0.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
товар відсутній
DMN2300UFD-7 DIODES INCORPORATED DMN2300UFD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.34A; Idm: 6A; 470mW
Mounting: SMD
Case: X1-DFN1212-3
Drain-source voltage: 20V
Drain current: 1.34A
On-state resistance: 0.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.47W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6A
кількість в упаковці: 5 шт
товар відсутній
DMN2300UFL4-7 DIODES INCORPORATED DMN2300UFL4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.19A; Idm: 6A; 1.39W
Mounting: SMD
Case: X2-DFN1310-6
Drain-source voltage: 20V
Drain current: 1.19A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 1.39W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 3.2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6A
кількість в упаковці: 1 шт
товар відсутній
DMN2310U-7 DMN2310U-7 DIODES INCORPORATED DMN2310U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 680mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Pulsed drain current: 4.8A
Power dissipation: 0.68W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 20 шт
товар відсутній
DMN2310UW-7 DMN2310UW-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; Idm: 4.4A; 550mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.1A
Pulsed drain current: 4.4A
Power dissipation: 0.55W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 20 шт
товар відсутній
DMN2310UWQ-7 DMN2310UWQ-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; Idm: 4.4A; 550mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.1A
Pulsed drain current: 4.4A
Power dissipation: 0.55W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10 шт
товар відсутній
DMN2320UFB4-7B DIODES INCORPORATED DMN2320UFB4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 6A; 1.07W
Mounting: SMD
Power dissipation: 1.07W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 0.89nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6A
Case: X2-DFN1006-3
Drain-source voltage: 20V
Drain current: 0.7A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
кількість в упаковці: 10000 шт
товар відсутній
DMN2400UFB-7 DIODES INCORPORATED ds31963.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 550mA; Idm: 3A; 470mW
Polarisation: unipolar
Power dissipation: 0.47W
Gate charge: 0.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 3A
Type of transistor: N-MOSFET
On-state resistance: 0.9Ω
Drain current: 0.55A
Drain-source voltage: 20V
Case: X1-DFN1006-3
Kind of package: reel; tape
Mounting: SMD
кількість в упаковці: 10 шт
товар відсутній
DMN2400UFDQ-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 3A; 850mW
Polarisation: unipolar
Power dissipation: 0.85W
Gate charge: 0.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 3A
Type of transistor: N-MOSFET
On-state resistance: 1.6Ω
Drain current: 0.7A
Drain-source voltage: 20V
Case: U-DFN1212-3
Kind of package: reel; tape
Mounting: SMD
кількість в упаковці: 5 шт
товар відсутній
DMN2400UV-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 840mA; Idm: 3A; 530mW; SOT563
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.84A
Pulsed drain current: 3A
Power dissipation: 0.53W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
DMN2400UV-7 DMN2400UV-7 DIODES INCORPORATED DMN2400UV.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.84A; 0.53W; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.84A
Power dissipation: 0.53W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
на замовлення 2835 шт:
термін постачання 7-14 дні (днів)
20+15.98 грн
35+ 8.51 грн
100+ 7.33 грн
155+ 6.59 грн
420+ 6.23 грн
3000+ 6.04 грн
Мінімальне замовлення: 20
DMN2450UFB4-7B DIODES INCORPORATED DMN2450UFB4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW
Mounting: SMD
Case: X2-DFN1006-3
Kind of package: reel; tape
Power dissipation: 0.9W
Drain-source voltage: 20V
Drain current: 0.8A
On-state resistance: 0.7Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 1.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 3A
кількість в упаковці: 10000 шт
товар відсутній
DMN2450UFB4-7R DIODES INCORPORATED DMN2450UFB4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW
Mounting: SMD
Case: X2-DFN1006-3
Kind of package: reel; tape
Power dissipation: 0.9W
Drain-source voltage: 20V
Drain current: 0.8A
On-state resistance: 0.7Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 1.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 3A
кількість в упаковці: 20 шт
товар відсутній
DMN2450UFD-7 DIODES INCORPORATED DMN2450UFD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 3A; 890mW
Mounting: SMD
Case: X1-DFN1212-3
Kind of package: reel; tape
Power dissipation: 0.89W
Drain-source voltage: 20V
Drain current: 0.7A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 3A
кількість в упаковці: 10 шт
товар відсутній
DMN2451UFB4Q-7B DIODES INCORPORATED DMN2451UFB4Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMN24H11DS-7 DMN24H11DS-7 DIODES INCORPORATED DMN24H11DS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 220mA; Idm: 0.8A; 1.2W; SOT23
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 0.8A
Case: SOT23
Drain-source voltage: 240V
Drain current: 0.22A
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 3.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
DMN24H11DSQ-13 DMN24H11DSQ-13 DIODES INCORPORATED DMN24H11DSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 220mA; Idm: 0.8A; 1.2W; SOT23
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 0.8A
Case: SOT23
Drain-source voltage: 240V
Drain current: 0.22A
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 3.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 10000 шт
товар відсутній
DMN24H11DSQ-7 DMN24H11DSQ-7 DIODES INCORPORATED DMN24H11DSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 220mA; Idm: 0.8A; 1.2W; SOT23
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 0.8A
Case: SOT23
Drain-source voltage: 240V
Drain current: 0.22A
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 3.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
DMN24H3D5L-13 DIODES INCORPORATED DMN24H3D5L.pdf DMN24H3D5L-13 SMD N channel transistors
товар відсутній
DMN24H3D5L-7 DIODES INCORPORATED DMN24H3D5L.pdf DMN24H3D5L-7 SMD N channel transistors
товар відсутній
DMN2501UFB4-7 DIODES INCORPORATED DMN2501UFB4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; Idm: 6A; 700mW
Case: X2-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.7Ω
Type of transistor: N-MOSFET
Power dissipation: 0.7W
Polarisation: unipolar
Gate charge: 2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6A
Drain-source voltage: 20V
Drain current: 1.4A
кількість в упаковці: 5 шт
товар відсутній
DMN2550UFA-7B DIODES INCORPORATED DMN2550UFA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1.5A; 360mW
Mounting: SMD
Case: X2-DFN0806-3
Kind of package: reel; tape
Power dissipation: 0.36W
Drain-source voltage: 20V
Drain current: 0.5A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 880pC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
кількість в упаковці: 10000 шт
товар відсутній
DMN2600UFB-7 DIODES INCORPORATED ds31983.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 900mA; Idm: 3A; 540mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.9A
Pulsed drain current: 3A
Power dissipation: 0.54W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 0.85nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10 шт
товар відсутній
DMN26D0UFB4-7 DMN26D0UFB4-7 DIODES INCORPORATED DMN26D0UFB4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 0.35W; X1-DFN1006-3
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Case: X1-DFN1006-3
Drain-source voltage: 20V
Drain current: 0.18A
On-state resistance: 6Ω
кількість в упаковці: 5 шт
товар відсутній
DMN2040U-13 DMN2040U.pdf
Виробник: DIODES INCORPORATED
DMN2040U-13 SMD N channel transistors
товар відсутній
DMN2040U-7 DMN2040U.pdf
Виробник: DIODES INCORPORATED
DMN2040U-7 SMD N channel transistors
товар відсутній
DMN2041L-7 DMN2041L.pdf
DMN2041L-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.5A; Idm: 30A; 780mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.5A
Pulsed drain current: 30A
Power dissipation: 0.78W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 15.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
DMN2041LSD-13 ds31964.pdf
DMN2041LSD-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.92A; Idm: 30A; 1.16W; SO8
Polarisation: unipolar
On-state resistance: 41mΩ
Kind of package: reel; tape
Drain current: 4.92A
Drain-source voltage: 20V
Case: SO8
Gate charge: 15.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 1.16W
кількість в упаковці: 1 шт
товар відсутній
DMN2041UFDB-7 DMN2041UFDB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 20A; 2.2W
Mounting: SMD
Case: U-DFN2020-6
Pulsed drain current: 20A
Drain-source voltage: 20V
Drain current: 4.9A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±12V
кількість в упаковці: 3000 шт
товар відсутній
DMN2044UCB4-7 DMN2044UCB4.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 16A; 1.18W
Mounting: SMD
Drain current: 3.6A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.18W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 16A
Case: U-WLB1010-4
Drain-source voltage: 20V
кількість в упаковці: 1 шт
товар відсутній
DMN2046U-13 DMN2046U.pdf
DMN2046U-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.7A; Idm: 18A; 1.26W; SOT23
Kind of package: reel; tape
Pulsed drain current: 18A
Power dissipation: 1.26W
Gate charge: 3.8nC
Polarisation: unipolar
Drain current: 2.7A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Case: SOT23
On-state resistance: 0.11Ω
Gate-source voltage: ±12V
Mounting: SMD
кількість в упаковці: 10000 шт
товар відсутній
DMN2046U-7 DMN2046U.pdf
DMN2046U-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.7A; 0.76W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.7A
Power dissipation: 0.76W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
на замовлення 1655 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
20+15.14 грн
50+ 5.71 грн
100+ 4.86 грн
240+ 4.12 грн
660+ 3.9 грн
Мінімальне замовлення: 20
DMN2050L-7 DMN2050L.pdf
DMN2050L-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.9A; 1.4W; SOT23
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±12V
Case: SOT23
On-state resistance: 0.1Ω
Power dissipation: 1.4W
Polarisation: unipolar
Drain current: 5.9A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
DMN2050LFDB-13 DMN2050LFDB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 25A; 900mW
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 25A
Mounting: SMD
Case: U-DFN2020-6
кількість в упаковці: 10000 шт
товар відсутній
DMN2050LFDB-7 DMN2050LFDB.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.1A; 0.73W; U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±12V
Case: U-DFN2020-6
On-state resistance: 55mΩ
Power dissipation: 0.73W
Polarisation: unipolar
Drain current: 4.1A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
кількість в упаковці: 1 шт
товар відсутній
DMN2053U-13 DMN2053U.pdf
DMN2053U-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 0.8W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.4A
Pulsed drain current: 22A
Power dissipation: 0.8W
Case: SOT23-3
Gate-source voltage: ±12V
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
DMN2053U-7 DMN2053U.pdf
DMN2053U-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 1.3W; SOT23
Power dissipation: 1.3W
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Drain-source voltage: 20V
Drain current: 5.4A
On-state resistance: 91mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 4.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 22A
кількість в упаковці: 5 шт
товар відсутній
DMN2053UVT-7 DMN2053UVT.pdf
DMN2053UVT-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; Idm: 22A; 1.1W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Pulsed drain current: 22A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
DMN2053UW-7 DMN2053UW.pdf
DMN2053UW-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 1.3W; SOT23
Power dissipation: 1.3W
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Drain-source voltage: 20V
Drain current: 5.4A
On-state resistance: 91mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 4.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 22A
кількість в упаковці: 5 шт
товар відсутній
DMN2053UWQ-7 DMN2053UWQ.pdf
DMN2053UWQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; Idm: 20A; 0.47W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
Pulsed drain current: 20A
Power dissipation: 0.47W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 5 шт
товар відсутній
DMN2055U-13 DMN2055U.pdf
DMN2055U-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
DMN2055U-7 DMN2055U.pdf
DMN2055U-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
DMN2056U-13 DMN2056U.pdf
DMN2056U-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 22A; 940mW; SOT23
Polarisation: unipolar
Power dissipation: 0.94W
Kind of package: reel; tape
Gate charge: 4.3nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 22A
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
Drain current: 3.2A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 10000 шт
товар відсутній
DMN2056U-7 DMN2056U.pdf
DMN2056U-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.94W; SOT23
Polarisation: unipolar
Power dissipation: 0.94W
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
Drain current: 3.7A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 3025 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
10+29.73 грн
13+ 22.04 грн
15+ 18.03 грн
50+ 12.08 грн
100+ 10.27 грн
143+ 7.14 грн
391+ 6.75 грн
Мінімальне замовлення: 10
DMN2058U-13 DMN2058U.pdf
DMN2058U-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; Idm: 24A; 1.13W; SOT23
Case: SOT23
Drain-source voltage: 20V
Drain current: 3.7A
On-state resistance: 91mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.13W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 24A
Mounting: SMD
кількість в упаковці: 10000 шт
товар відсутній
DMN2058U-7 DMN2058U.pdf
DMN2058U-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.3A; 0.74W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.3A
Power dissipation: 0.74W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
на замовлення 2500 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
25+13.75 грн
30+ 8.96 грн
100+ 7.63 грн
160+ 6.28 грн
440+ 5.94 грн
Мінімальне замовлення: 25
DMN2058UW-13
DMN2058UW-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3A; Idm: 20A; 700mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3A
Pulsed drain current: 20A
Power dissipation: 0.7W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
DMN2065UW-7 DMN2065UW.pdf
DMN2065UW-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.6A; Idm: 30A; 700mW; SOT323
Mounting: SMD
Kind of package: reel; tape
Gate charge: 5.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Drain-source voltage: 20V
Drain current: 2.6A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 0.7W
Case: SOT323
Polarisation: unipolar
кількість в упаковці: 5 шт
товар відсутній
DMN2065UWQ-7 DMN2065UWQ.pdf
DMN2065UWQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.6A; Idm: 30A; 700mW; SOT323
Mounting: SMD
Kind of package: reel; tape
Gate charge: 5.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Drain-source voltage: 20V
Drain current: 2.6A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 0.7W
Case: SOT323
Polarisation: unipolar
кількість в упаковці: 5 шт
товар відсутній
DMN2075UDW-7 DMN2075UDW.pdf
DMN2075UDW-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 20A; 580mW; SOT363
Pulsed drain current: 20A
Power dissipation: 0.58W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 2.5A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SOT363
On-state resistance: 0.1Ω
Mounting: SMD
кількість в упаковці: 5 шт
товар відсутній
DMN2080UCB4-7 DMN2080UCB4.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 8A; 1.25W
Mounting: SMD
Case: X2-WLB0808-4
Kind of package: reel; tape
Pulsed drain current: 8A
Drain-source voltage: 20V
Drain current: 3.2A
On-state resistance: 0.115Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 7.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
товар відсутній
DMN2100UDM-7 DMN2100UDM.pdf
DMN2100UDM-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.6W; SOT26
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT26
Drain current: 2.5A
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
On-state resistance: 0.13Ω
Type of transistor: N-MOSFET
Power dissipation: 0.6W
кількість в упаковці: 1 шт
товар відсутній
DMN21D2UFB-7 DMN21D2UFB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: X1-DFN1006-3
Drain current: 0.7A
Gate charge: 930pC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 1A
Mounting: SMD
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 570mW
кількість в упаковці: 10 шт
товар відсутній
DMN21D2UFB-7B DMN21D2UFB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: X1-DFN1006-3
Drain current: 0.7A
Gate charge: 930pC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 1A
Mounting: SMD
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 570mW
кількість в упаковці: 10000 шт
товар відсутній
DMN2230U-7 DMN2230U.pdf
DMN2230U-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Power dissipation: 0.6W
Polarisation: unipolar
Drain current: 2A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.23Ω
Mounting: SMD
кількість в упаковці: 5 шт
на замовлення 2549 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
20+15.14 грн
25+ 11.83 грн
100+ 10.09 грн
115+ 8.95 грн
310+ 8.46 грн
Мінімальне замовлення: 20
DMN2230UQ-13
DMN2230UQ-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 7A; 600mW; SOT23
Pulsed drain current: 7A
Power dissipation: 0.6W
Gate charge: 2.3nC
Polarisation: unipolar
Drain current: 2A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.23Ω
Mounting: SMD
кількість в упаковці: 10000 шт
товар відсутній
DMN2230UQ-7 DMN2230UQ.pdf
DMN2230UQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Power dissipation: 0.6W
Polarisation: unipolar
Drain current: 2A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.11Ω
Mounting: SMD
кількість в упаковці: 5 шт
на замовлення 3355 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
20+15.79 грн
25+ 12.72 грн
100+ 10.87 грн
115+ 8.9 грн
310+ 8.41 грн
Мінімальне замовлення: 20
DMN2250UFB-7B DMN2250UFB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.03A; Idm: 6A; 300mW
Mounting: SMD
Case: X1-DFN1006-3
Kind of package: reel; tape
Power dissipation: 0.3W
Drain-source voltage: 20V
Drain current: 1.03A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 3.1nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6A
кількість в упаковці: 10000 шт
товар відсутній
DMN2300U-7 DMN2300U.pdf
DMN2300U-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.01A; Idm: 11A; 550mW; SOT23
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 11A
Gate charge: 1.6nC
Case: SOT23
Drain-source voltage: 20V
Drain current: 1.01A
On-state resistance: 0.36Ω
Type of transistor: N-MOSFET
Power dissipation: 0.55W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
DMN2300UFB-7B DMN2300UFB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 940mA; Idm: 8A; 1.2W
Mounting: SMD
Case: X1-DFN1006-3
Drain-source voltage: 20V
Drain current: 0.94A
On-state resistance: 0.36Ω
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 0.89nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 8A
кількість в упаковці: 10000 шт
товар відсутній
DMN2300UFB4-7B DMN2300UFB4.pdf
DMN2300UFB4-7B
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.96A; 0.5W; X1-DFN1006-3
Features of semiconductor devices: ESD protected gate
Mounting: SMD
Case: X1-DFN1006-3
Drain-source voltage: 20V
Drain current: 0.96A
On-state resistance: 0.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
товар відсутній
DMN2300UFD-7 DMN2300UFD.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.34A; Idm: 6A; 470mW
Mounting: SMD
Case: X1-DFN1212-3
Drain-source voltage: 20V
Drain current: 1.34A
On-state resistance: 0.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.47W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6A
кількість в упаковці: 5 шт
товар відсутній
DMN2300UFL4-7 DMN2300UFL4.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.19A; Idm: 6A; 1.39W
Mounting: SMD
Case: X2-DFN1310-6
Drain-source voltage: 20V
Drain current: 1.19A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 1.39W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 3.2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6A
кількість в упаковці: 1 шт
товар відсутній
DMN2310U-7 DMN2310U.pdf
DMN2310U-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 680mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Pulsed drain current: 4.8A
Power dissipation: 0.68W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 20 шт
товар відсутній
DMN2310UW-7
DMN2310UW-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; Idm: 4.4A; 550mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.1A
Pulsed drain current: 4.4A
Power dissipation: 0.55W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 20 шт
товар відсутній
DMN2310UWQ-7
DMN2310UWQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; Idm: 4.4A; 550mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.1A
Pulsed drain current: 4.4A
Power dissipation: 0.55W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10 шт
товар відсутній
DMN2320UFB4-7B DMN2320UFB4.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 6A; 1.07W
Mounting: SMD
Power dissipation: 1.07W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 0.89nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6A
Case: X2-DFN1006-3
Drain-source voltage: 20V
Drain current: 0.7A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
кількість в упаковці: 10000 шт
товар відсутній
DMN2400UFB-7 ds31963.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 550mA; Idm: 3A; 470mW
Polarisation: unipolar
Power dissipation: 0.47W
Gate charge: 0.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 3A
Type of transistor: N-MOSFET
On-state resistance: 0.9Ω
Drain current: 0.55A
Drain-source voltage: 20V
Case: X1-DFN1006-3
Kind of package: reel; tape
Mounting: SMD
кількість в упаковці: 10 шт
товар відсутній
DMN2400UFDQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 3A; 850mW
Polarisation: unipolar
Power dissipation: 0.85W
Gate charge: 0.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 3A
Type of transistor: N-MOSFET
On-state resistance: 1.6Ω
Drain current: 0.7A
Drain-source voltage: 20V
Case: U-DFN1212-3
Kind of package: reel; tape
Mounting: SMD
кількість в упаковці: 5 шт
товар відсутній
DMN2400UV-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 840mA; Idm: 3A; 530mW; SOT563
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.84A
Pulsed drain current: 3A
Power dissipation: 0.53W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
DMN2400UV-7 DMN2400UV.pdf
DMN2400UV-7
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.84A; 0.53W; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.84A
Power dissipation: 0.53W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
на замовлення 2835 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
20+15.98 грн
35+ 8.51 грн
100+ 7.33 грн
155+ 6.59 грн
420+ 6.23 грн
3000+ 6.04 грн
Мінімальне замовлення: 20
DMN2450UFB4-7B DMN2450UFB4.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW
Mounting: SMD
Case: X2-DFN1006-3
Kind of package: reel; tape
Power dissipation: 0.9W
Drain-source voltage: 20V
Drain current: 0.8A
On-state resistance: 0.7Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 1.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 3A
кількість в упаковці: 10000 шт
товар відсутній
DMN2450UFB4-7R DMN2450UFB4.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW
Mounting: SMD
Case: X2-DFN1006-3
Kind of package: reel; tape
Power dissipation: 0.9W
Drain-source voltage: 20V
Drain current: 0.8A
On-state resistance: 0.7Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 1.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 3A
кількість в упаковці: 20 шт
товар відсутній
DMN2450UFD-7 DMN2450UFD.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 3A; 890mW
Mounting: SMD
Case: X1-DFN1212-3
Kind of package: reel; tape
Power dissipation: 0.89W
Drain-source voltage: 20V
Drain current: 0.7A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 3A
кількість в упаковці: 10 шт
товар відсутній
DMN2451UFB4Q-7B DMN2451UFB4Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMN24H11DS-7 DMN24H11DS.pdf
DMN24H11DS-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 220mA; Idm: 0.8A; 1.2W; SOT23
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 0.8A
Case: SOT23
Drain-source voltage: 240V
Drain current: 0.22A
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 3.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
DMN24H11DSQ-13 DMN24H11DSQ.pdf
DMN24H11DSQ-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 220mA; Idm: 0.8A; 1.2W; SOT23
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 0.8A
Case: SOT23
Drain-source voltage: 240V
Drain current: 0.22A
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 3.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 10000 шт
товар відсутній
DMN24H11DSQ-7 DMN24H11DSQ.pdf
DMN24H11DSQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 220mA; Idm: 0.8A; 1.2W; SOT23
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 0.8A
Case: SOT23
Drain-source voltage: 240V
Drain current: 0.22A
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 3.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
DMN24H3D5L-13 DMN24H3D5L.pdf
Виробник: DIODES INCORPORATED
DMN24H3D5L-13 SMD N channel transistors
товар відсутній
DMN24H3D5L-7 DMN24H3D5L.pdf
Виробник: DIODES INCORPORATED
DMN24H3D5L-7 SMD N channel transistors
товар відсутній
DMN2501UFB4-7 DMN2501UFB4.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; Idm: 6A; 700mW
Case: X2-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.7Ω
Type of transistor: N-MOSFET
Power dissipation: 0.7W
Polarisation: unipolar
Gate charge: 2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6A
Drain-source voltage: 20V
Drain current: 1.4A
кількість в упаковці: 5 шт
товар відсутній
DMN2550UFA-7B DMN2550UFA.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1.5A; 360mW
Mounting: SMD
Case: X2-DFN0806-3
Kind of package: reel; tape
Power dissipation: 0.36W
Drain-source voltage: 20V
Drain current: 0.5A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 880pC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
кількість в упаковці: 10000 шт
товар відсутній
DMN2600UFB-7 ds31983.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 900mA; Idm: 3A; 540mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.9A
Pulsed drain current: 3A
Power dissipation: 0.54W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 0.85nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10 шт
товар відсутній
DMN26D0UFB4-7 DMN26D0UFB4.pdf
DMN26D0UFB4-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 0.35W; X1-DFN1006-3
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Case: X1-DFN1006-3
Drain-source voltage: 20V
Drain current: 0.18A
On-state resistance: 6Ω
кількість в упаковці: 5 шт
товар відсутній
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