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DMN53D0LDW-13 DMN53D0LDW-13 DIODES INCORPORATED DMN53D0LDW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 360mA; 310mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.36A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
DMN53D0LDW-7 DMN53D0LDW-7 DIODES INCORPORATED DMN53D0LDW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.25A; 0.31W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.25A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
на замовлення 2640 шт:
термін постачання 7-14 дні (днів)
20+14.4 грн
50+ 5.83 грн
100+ 5.06 грн
250+ 3.97 грн
690+ 3.76 грн
Мінімальне замовлення: 20
DMN53D0LDWQ-7 DMN53D0LDWQ-7 DIODES INCORPORATED DMN53D0LDWQ.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.37A; Idm: 1A; 0.4W; SOT363
Mounting: SMD
Features of semiconductor devices: ESD protected gate
Case: SOT363
Power dissipation: 0.4W
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1A
Drain-source voltage: 50V
Drain current: 0.37A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET x2
кількість в упаковці: 5 шт
товар відсутній
DMN53D0LQ-13 DMN53D0LQ-13 DIODES INCORPORATED DMN53D0LQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; 540mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
DMN53D0LQ-7 DMN53D0LQ-7 DIODES INCORPORATED DMN53D0LQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
кількість в упаковці: 5 шт
на замовлення 840 шт:
термін постачання 7-14 дні (днів)
20+14.4 грн
50+ 5.83 грн
100+ 5.06 грн
260+ 3.83 грн
715+ 3.62 грн
Мінімальне замовлення: 20
DMN53D0LT-7 DMN53D0LT-7 DIODES INCORPORATED DMN53D0LT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 350mA; 300mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10 шт
товар відсутній
DMN53D0LV-7 DIODES INCORPORATED DMN53D0LV.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; 430mW; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Power dissipation: 0.43W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
DMN53D0LW-13 DMN53D0LW-13 DIODES INCORPORATED DMN53D0LW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.7A; 420mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.7A
Power dissipation: 0.42W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
DMN53D0LW-7 DMN53D0LW-7 DIODES INCORPORATED DMN53D0LW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.7A; 420mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.7A
Power dissipation: 0.42W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 20 шт
товар відсутній
DMN53D0U-13 DMN53D0U-13 DIODES INCORPORATED DMN53D0U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 0.5A; 520mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 0.5A
Power dissipation: 0.52W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
DMN53D0U-7 DMN53D0U-7 DIODES INCORPORATED DMN53D0U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.3A; Idm: 0.5A; 0.52W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 0.5A
Power dissipation: 0.52W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
DMN55D0UT-7 DMN55D0UT-7 DIODES INCORPORATED DMN55D0UT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.16A; 0.2W; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.16A
Power dissipation: 0.2W
Case: SOT523
Gate-source voltage: ±12V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 10 шт
товар відсутній
DMN55D0UTQ-7 DMN55D0UTQ-7 DIODES INCORPORATED ds31330.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 160mA; Idm: 560A; 200mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.16A
Pulsed drain current: 560A
Power dissipation: 0.2W
Case: SOT523
Gate-source voltage: ±12V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 295nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 10 шт
товар відсутній
DMN5L06DWK-7 DMN5L06DWK-7 DIODES INCORPORATED DMN5L06DWK.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.305A; Idm: 0.8A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.305A
Pulsed drain current: 0.8A
Power dissipation: 0.25W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
DMN5L06K-7 DMN5L06K-7 DIODES INCORPORATED DMN5L06K_Rev12-3_Aug2022.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.3A; Idm: 0.8A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
на замовлення 3354 шт:
термін постачання 7-14 дні (днів)
20+14.03 грн
50+ 5.66 грн
100+ 4.91 грн
280+ 3.57 грн
765+ 3.38 грн
Мінімальне замовлення: 20
DMN5L06KQ-7 DMN5L06KQ-7 DIODES INCORPORATED DMN5L06K_Mar2014.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 800mA; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.8A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10 шт
товар відсутній
DMN5L06VAK-7 DIODES INCORPORATED DMN5_L06VK_VAK_010VAK_Rev13_Feb2017.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 280mA; Idm: 1.5A; 250mW; SOT563
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.28A
Pulsed drain current: 1.5A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±20V; ±40V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMN5L06VK-7 DMN5L06VK-7 DIODES INCORPORATED DMN5L06VK.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.28A; 0.25W; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.28A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
товар відсутній
DMN6013LFG-7 DIODES INCORPORATED DMN6013LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.3A; Idm: 58.3A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.3A
Pulsed drain current: 58.3A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 55.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
DMN6013LFGQ-13 DIODES INCORPORATED DMN6013LFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.3A; Idm: 58.3A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.3A
Pulsed drain current: 58.3A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 55.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
DMN6013LFGQ-7 DIODES INCORPORATED DMN6013LFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.3A; Idm: 58.3A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.3A
Pulsed drain current: 58.3A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 55.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
DMN6017SFV-7 DIODES INCORPORATED DMN6017SFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 28A; Idm: 140A; 2W
Mounting: SMD
Drain-source voltage: 60V
Drain current: 28A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 55nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 140A
Case: PowerDI3333-8
кількість в упаковці: 1 шт
товар відсутній
DMN6017SK3-13 DIODES INCORPORATED DMN6017SK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.8A; Idm: 70A; 3.3W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.8A
Pulsed drain current: 70A
Power dissipation: 3.3W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
DMN601DMK-7 DMN601DMK-7 DIODES INCORPORATED ds30657.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 470mA; Idm: 0.85A; 980mW; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 470mA
Pulsed drain current: 0.85A
Power dissipation: 0.98W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 304pC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMN601DWK-7 DMN601DWK-7 DIODES INCORPORATED DMN601DWK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT363
Type of transistor: N-MOSFET
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.2W
On-state resistance: 3Ω
Polarisation: unipolar
Gate charge: 304pC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 0.8A
Drain current: 0.3A
Drain-source voltage: 60V
кількість в упаковці: 1 шт
товар відсутній
DMN601DWKQ-7 DMN601DWKQ-7 DIODES INCORPORATED DMN601DWKQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT363
Type of transistor: N-MOSFET
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.2W
On-state resistance: 3Ω
Polarisation: unipolar
Gate charge: 304pC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 0.8A
Drain current: 0.3A
Drain-source voltage: 60V
кількість в упаковці: 10 шт
товар відсутній
DMN601K-7 DMN601K-7 DIODES INCORPORATED DMN601K.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 25 шт
на замовлення 1350 шт:
термін постачання 7-14 дні (днів)
125+2.64 грн
150+ 2.01 грн
500+ 1.72 грн
675+ 1.49 грн
1875+ 1.41 грн
12000+ 1.36 грн
Мінімальне замовлення: 125
DMN601TK-7 DMN601TK-7 DIODES INCORPORATED ds30654.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 800mA; 150mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.8A
Power dissipation: 0.15W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 20 шт
товар відсутній
DMN601VK-7 DIODES INCORPORATED BC847BV.jpg Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 250mW; SOT563
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
DMN601VKQ-7 DIODES INCORPORATED DMN601VKQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 250mW; SOT563
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
DMN601WK-7 DMN601WK-7 DIODES INCORPORATED DMN601WK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.2W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
товар відсутній
DMN601WKQ-13 DMN601WKQ-13 DIODES INCORPORATED DMN601WKQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 800mA; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
DMN601WKQ-7 DMN601WKQ-7 DIODES INCORPORATED DMN601WKQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 800mA; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10 шт
товар відсутній
DMN6022SSD-13 DMN6022SSD-13 DIODES INCORPORATED DMN6022SSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 45A; 1.5W; SO8
Polarisation: unipolar
On-state resistance: 34mΩ
Kind of package: reel; tape
Drain current: 5A
Drain-source voltage: 60V
Case: SO8
Gate charge: 32nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 45A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 1.5W
кількість в упаковці: 2500 шт
товар відсутній
DMN6040SE-13 DIODES INCORPORATED DMN6040SE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.5A; Idm: 30A; 1.2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5.5A
Pulsed drain current: 30A
Power dissipation: 1.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 22.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMN6040SFDE-7 DIODES INCORPORATED DMN6040SFDE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.1A; Idm: 30A; 0.66W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 30A
Power dissipation: 0.66W
Case: U-DFN2020-6 Type E
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMN6040SFDEQ-7 DIODES INCORPORATED DMN6040SFDEQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.1A; Idm: 30A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5.1A
Pulsed drain current: 30A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 22.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
DMN6040SK3-13 DIODES INCORPORATED DMN6040SK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 30A; 17W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Pulsed drain current: 30A
Power dissipation: 17W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 22.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMN6040SK3Q-13 DIODES INCORPORATED DMN6040SK3Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 30A; 17W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Pulsed drain current: 30A
Power dissipation: 17W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 22.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
DMN6040SSD-13 DMN6040SSD-13 DIODES INCORPORATED DMN6040SSD.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; 0.8W; SO8
Polarisation: unipolar
On-state resistance: 55mΩ
Kind of package: reel; tape
Drain current: 4.1A
Drain-source voltage: 60V
Case: SO8
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET x2
Mounting: SMD
Power dissipation: 0.8W
кількість в упаковці: 1 шт
на замовлення 1576 шт:
термін постачання 7-14 дні (днів)
8+37.16 грн
50+ 26.43 грн
62+ 16.34 грн
170+ 15.45 грн
Мінімальне замовлення: 8
DMN6040SSDQ-13 DMN6040SSDQ-13 DIODES INCORPORATED DMN6040SSDQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 30A; 1.1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5.3A
Pulsed drain current: 30A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 22.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMN6040SSDQ13 DMN6040SSDQ13 DIODES INCORPORATED Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; Idm: 30A; 0.8W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 30A
Power dissipation: 0.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
DMN6040SSS-13 DMN6040SSS-13 DIODES INCORPORATED DMN6040SSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.4A; 1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.4A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 4520 шт:
термін постачання 7-14 дні (днів)
10+28.24 грн
20+ 18.63 грн
76+ 13.22 грн
207+ 12.5 грн
2500+ 12.34 грн
Мінімальне замовлення: 10
DMN6040SVT-7 DMN6040SVT-7 DIODES INCORPORATED DMN6040SVT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 30A; 1.1W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5A
Pulsed drain current: 30A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 22.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMN6040SVTQ-13 DMN6040SVTQ-13 DIODES INCORPORATED DMN6040SVTQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 30A; 1.1W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5A
Pulsed drain current: 30A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 22.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
DMN6040SVTQ-7 DMN6040SVTQ-7 DIODES INCORPORATED DMN6040SVTQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 30A; 1.1W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5A
Pulsed drain current: 30A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 22.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
DMN6066SSD-13 DMN6066SSD-13 DIODES INCORPORATED DMN6066SSD.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 17A; 2.14W; SO8
Polarisation: unipolar
On-state resistance: 97mΩ
Kind of package: reel; tape
Drain current: 3.5A
Drain-source voltage: 60V
Case: SO8
Gate charge: 10.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 17A
Type of transistor: N-MOSFET x2
Mounting: SMD
Power dissipation: 2.14W
кількість в упаковці: 2500 шт
товар відсутній
DMN6066SSDQ-13 DMN6066SSDQ-13 DIODES INCORPORATED Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 17A; 2.14W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 17A
Power dissipation: 2.14W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 10.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
DMN6066SSS-13 DMN6066SSS-13 DIODES INCORPORATED DMN6066SSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 23A; 2.81W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 23A
Power dissipation: 2.81W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 10.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
DMN6068LK3-13 DIODES INCORPORATED DMN6068LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6A; Idm: 22.2A; 4.12W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6A
Pulsed drain current: 22.2A
Power dissipation: 4.12W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMN6068SE-13 DMN6068SE-13 DIODES INCORPORATED DMN6068SE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMN6068SEQ-13 DIODES INCORPORATED ds32033.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 20.8A; 3.7W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 20.8A
Power dissipation: 3.7W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 10.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
DMN6069SE-13 DIODES INCORPORATED DMN6069SE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.3A; Idm: 25A; 1.4W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.3A
Pulsed drain current: 25A
Power dissipation: 1.4W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMN6069SFG-13 DIODES INCORPORATED DMN6069SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 25A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
DMN6069SFG-7 DIODES INCORPORATED DMN6069SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 25A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMN6069SFGQ-13 DIODES INCORPORATED DMN6069SFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 25A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
DMN6069SFGQ-7 DIODES INCORPORATED DMN6069SFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 25A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
DMN6070SFCL-7 DIODES INCORPORATED DMN6070SFCL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.8W
Case: X1-DFN1616-6
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 12.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMN6070SSD-13 DMN6070SSD-13 DIODES INCORPORATED DMN6070SSD.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.6A; 1.2W; SO8
Polarisation: unipolar
On-state resistance: 0.1Ω
Kind of package: reel; tape
Drain current: 3.6A
Drain-source voltage: 60V
Case: SO8
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET x2
Mounting: SMD
Power dissipation: 1.2W
кількість в упаковці: 1 шт
на замовлення 2024 шт:
термін постачання 7-14 дні (днів)
5+57.6 грн
8+ 34.4 грн
25+ 22.43 грн
66+ 15.36 грн
181+ 14.49 грн
Мінімальне замовлення: 5
DMN6070SSDQ-13 DMN6070SSDQ-13 DIODES INCORPORATED Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 2.1A; Idm: 12A; 1.5W; SO8
Kind of package: reel; tape
Pulsed drain current: 12A
Power dissipation: 1.5W
Gate charge: 12.3nC
Polarisation: unipolar
Drain current: 2.1A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Case: SO8
On-state resistance: 0.1Ω
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
DMN53D0LDW-13 DMN53D0LDW.pdf
DMN53D0LDW-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 360mA; 310mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.36A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
DMN53D0LDW-7 DMN53D0LDW.pdf
DMN53D0LDW-7
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.25A; 0.31W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.25A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
на замовлення 2640 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
20+14.4 грн
50+ 5.83 грн
100+ 5.06 грн
250+ 3.97 грн
690+ 3.76 грн
Мінімальне замовлення: 20
DMN53D0LDWQ-7 DMN53D0LDWQ.pdf
DMN53D0LDWQ-7
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.37A; Idm: 1A; 0.4W; SOT363
Mounting: SMD
Features of semiconductor devices: ESD protected gate
Case: SOT363
Power dissipation: 0.4W
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1A
Drain-source voltage: 50V
Drain current: 0.37A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET x2
кількість в упаковці: 5 шт
товар відсутній
DMN53D0LQ-13 DMN53D0LQ.pdf
DMN53D0LQ-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; 540mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
DMN53D0LQ-7 DMN53D0LQ.pdf
DMN53D0LQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
кількість в упаковці: 5 шт
на замовлення 840 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
20+14.4 грн
50+ 5.83 грн
100+ 5.06 грн
260+ 3.83 грн
715+ 3.62 грн
Мінімальне замовлення: 20
DMN53D0LT-7 DMN53D0LT.pdf
DMN53D0LT-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 350mA; 300mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10 шт
товар відсутній
DMN53D0LV-7 DMN53D0LV.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; 430mW; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Power dissipation: 0.43W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
DMN53D0LW-13 DMN53D0LW.pdf
DMN53D0LW-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.7A; 420mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.7A
Power dissipation: 0.42W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
DMN53D0LW-7 DMN53D0LW.pdf
DMN53D0LW-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.7A; 420mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.7A
Power dissipation: 0.42W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 20 шт
товар відсутній
DMN53D0U-13 DMN53D0U.pdf
DMN53D0U-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 0.5A; 520mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 0.5A
Power dissipation: 0.52W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
DMN53D0U-7 DMN53D0U.pdf
DMN53D0U-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.3A; Idm: 0.5A; 0.52W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 0.5A
Power dissipation: 0.52W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
DMN55D0UT-7 DMN55D0UT.pdf
DMN55D0UT-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.16A; 0.2W; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.16A
Power dissipation: 0.2W
Case: SOT523
Gate-source voltage: ±12V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 10 шт
товар відсутній
DMN55D0UTQ-7 ds31330.pdf
DMN55D0UTQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 160mA; Idm: 560A; 200mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.16A
Pulsed drain current: 560A
Power dissipation: 0.2W
Case: SOT523
Gate-source voltage: ±12V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 295nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 10 шт
товар відсутній
DMN5L06DWK-7 DMN5L06DWK.pdf
DMN5L06DWK-7
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.305A; Idm: 0.8A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.305A
Pulsed drain current: 0.8A
Power dissipation: 0.25W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
DMN5L06K-7 DMN5L06K_Rev12-3_Aug2022.pdf
DMN5L06K-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.3A; Idm: 0.8A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
на замовлення 3354 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
20+14.03 грн
50+ 5.66 грн
100+ 4.91 грн
280+ 3.57 грн
765+ 3.38 грн
Мінімальне замовлення: 20
DMN5L06KQ-7 DMN5L06K_Mar2014.pdf
DMN5L06KQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 800mA; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.8A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10 шт
товар відсутній
DMN5L06VAK-7 DMN5_L06VK_VAK_010VAK_Rev13_Feb2017.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 280mA; Idm: 1.5A; 250mW; SOT563
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.28A
Pulsed drain current: 1.5A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±20V; ±40V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMN5L06VK-7 DMN5L06VK.pdf
DMN5L06VK-7
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.28A; 0.25W; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.28A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
товар відсутній
DMN6013LFG-7 DMN6013LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.3A; Idm: 58.3A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.3A
Pulsed drain current: 58.3A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 55.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
DMN6013LFGQ-13 DMN6013LFGQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.3A; Idm: 58.3A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.3A
Pulsed drain current: 58.3A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 55.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
DMN6013LFGQ-7 DMN6013LFGQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.3A; Idm: 58.3A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.3A
Pulsed drain current: 58.3A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 55.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
DMN6017SFV-7 DMN6017SFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 28A; Idm: 140A; 2W
Mounting: SMD
Drain-source voltage: 60V
Drain current: 28A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 55nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 140A
Case: PowerDI3333-8
кількість в упаковці: 1 шт
товар відсутній
DMN6017SK3-13 DMN6017SK3.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.8A; Idm: 70A; 3.3W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.8A
Pulsed drain current: 70A
Power dissipation: 3.3W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
DMN601DMK-7 ds30657.pdf
DMN601DMK-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 470mA; Idm: 0.85A; 980mW; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 470mA
Pulsed drain current: 0.85A
Power dissipation: 0.98W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 304pC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMN601DWK-7 DMN601DWK.pdf
DMN601DWK-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT363
Type of transistor: N-MOSFET
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.2W
On-state resistance: 3Ω
Polarisation: unipolar
Gate charge: 304pC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 0.8A
Drain current: 0.3A
Drain-source voltage: 60V
кількість в упаковці: 1 шт
товар відсутній
DMN601DWKQ-7 DMN601DWKQ.pdf
DMN601DWKQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT363
Type of transistor: N-MOSFET
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.2W
On-state resistance: 3Ω
Polarisation: unipolar
Gate charge: 304pC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 0.8A
Drain current: 0.3A
Drain-source voltage: 60V
кількість в упаковці: 10 шт
товар відсутній
DMN601K-7 DMN601K.pdf
DMN601K-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 25 шт
на замовлення 1350 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
125+2.64 грн
150+ 2.01 грн
500+ 1.72 грн
675+ 1.49 грн
1875+ 1.41 грн
12000+ 1.36 грн
Мінімальне замовлення: 125
DMN601TK-7 ds30654.pdf
DMN601TK-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 800mA; 150mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.8A
Power dissipation: 0.15W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 20 шт
товар відсутній
DMN601VK-7 BC847BV.jpg
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 250mW; SOT563
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
DMN601VKQ-7 DMN601VKQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 250mW; SOT563
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
DMN601WK-7 DMN601WK.pdf
DMN601WK-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.2W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
товар відсутній
DMN601WKQ-13 DMN601WKQ.pdf
DMN601WKQ-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 800mA; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
DMN601WKQ-7 DMN601WKQ.pdf
DMN601WKQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 800mA; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10 шт
товар відсутній
DMN6022SSD-13 DMN6022SSD.pdf
DMN6022SSD-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 45A; 1.5W; SO8
Polarisation: unipolar
On-state resistance: 34mΩ
Kind of package: reel; tape
Drain current: 5A
Drain-source voltage: 60V
Case: SO8
Gate charge: 32nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 45A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 1.5W
кількість в упаковці: 2500 шт
товар відсутній
DMN6040SE-13 DMN6040SE.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.5A; Idm: 30A; 1.2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5.5A
Pulsed drain current: 30A
Power dissipation: 1.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 22.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMN6040SFDE-7 DMN6040SFDE.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.1A; Idm: 30A; 0.66W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 30A
Power dissipation: 0.66W
Case: U-DFN2020-6 Type E
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMN6040SFDEQ-7 DMN6040SFDEQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.1A; Idm: 30A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5.1A
Pulsed drain current: 30A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 22.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
DMN6040SK3-13 DMN6040SK3.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 30A; 17W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Pulsed drain current: 30A
Power dissipation: 17W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 22.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMN6040SK3Q-13 DMN6040SK3Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 30A; 17W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Pulsed drain current: 30A
Power dissipation: 17W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 22.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
DMN6040SSD-13 DMN6040SSD.pdf
DMN6040SSD-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; 0.8W; SO8
Polarisation: unipolar
On-state resistance: 55mΩ
Kind of package: reel; tape
Drain current: 4.1A
Drain-source voltage: 60V
Case: SO8
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET x2
Mounting: SMD
Power dissipation: 0.8W
кількість в упаковці: 1 шт
на замовлення 1576 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
8+37.16 грн
50+ 26.43 грн
62+ 16.34 грн
170+ 15.45 грн
Мінімальне замовлення: 8
DMN6040SSDQ-13 DMN6040SSDQ.pdf
DMN6040SSDQ-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 30A; 1.1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5.3A
Pulsed drain current: 30A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 22.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMN6040SSDQ13
DMN6040SSDQ13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; Idm: 30A; 0.8W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 30A
Power dissipation: 0.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
DMN6040SSS-13 DMN6040SSS.pdf
DMN6040SSS-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.4A; 1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.4A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 4520 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
10+28.24 грн
20+ 18.63 грн
76+ 13.22 грн
207+ 12.5 грн
2500+ 12.34 грн
Мінімальне замовлення: 10
DMN6040SVT-7 DMN6040SVT.pdf
DMN6040SVT-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 30A; 1.1W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5A
Pulsed drain current: 30A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 22.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMN6040SVTQ-13 DMN6040SVTQ.pdf
DMN6040SVTQ-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 30A; 1.1W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5A
Pulsed drain current: 30A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 22.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
DMN6040SVTQ-7 DMN6040SVTQ.pdf
DMN6040SVTQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 30A; 1.1W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5A
Pulsed drain current: 30A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 22.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
DMN6066SSD-13 DMN6066SSD.pdf
DMN6066SSD-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 17A; 2.14W; SO8
Polarisation: unipolar
On-state resistance: 97mΩ
Kind of package: reel; tape
Drain current: 3.5A
Drain-source voltage: 60V
Case: SO8
Gate charge: 10.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 17A
Type of transistor: N-MOSFET x2
Mounting: SMD
Power dissipation: 2.14W
кількість в упаковці: 2500 шт
товар відсутній
DMN6066SSDQ-13
DMN6066SSDQ-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 17A; 2.14W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 17A
Power dissipation: 2.14W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 10.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
DMN6066SSS-13 DMN6066SSS.pdf
DMN6066SSS-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 23A; 2.81W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 23A
Power dissipation: 2.81W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 10.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
DMN6068LK3-13 DMN6068LK3.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6A; Idm: 22.2A; 4.12W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6A
Pulsed drain current: 22.2A
Power dissipation: 4.12W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMN6068SE-13 DMN6068SE.pdf
DMN6068SE-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMN6068SEQ-13 ds32033.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 20.8A; 3.7W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 20.8A
Power dissipation: 3.7W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 10.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
DMN6069SE-13 DMN6069SE.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.3A; Idm: 25A; 1.4W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.3A
Pulsed drain current: 25A
Power dissipation: 1.4W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMN6069SFG-13 DMN6069SFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 25A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
DMN6069SFG-7 DMN6069SFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 25A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMN6069SFGQ-13 DMN6069SFGQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 25A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
DMN6069SFGQ-7 DMN6069SFGQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 25A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
DMN6070SFCL-7 DMN6070SFCL.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.8W
Case: X1-DFN1616-6
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 12.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
DMN6070SSD-13 DMN6070SSD.pdf
DMN6070SSD-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.6A; 1.2W; SO8
Polarisation: unipolar
On-state resistance: 0.1Ω
Kind of package: reel; tape
Drain current: 3.6A
Drain-source voltage: 60V
Case: SO8
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET x2
Mounting: SMD
Power dissipation: 1.2W
кількість в упаковці: 1 шт
на замовлення 2024 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
5+57.6 грн
8+ 34.4 грн
25+ 22.43 грн
66+ 15.36 грн
181+ 14.49 грн
Мінімальне замовлення: 5
DMN6070SSDQ-13
DMN6070SSDQ-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 2.1A; Idm: 12A; 1.5W; SO8
Kind of package: reel; tape
Pulsed drain current: 12A
Power dissipation: 1.5W
Gate charge: 12.3nC
Polarisation: unipolar
Drain current: 2.1A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Case: SO8
On-state resistance: 0.1Ω
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
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