Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (72934) > Сторінка 12 з 1216
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ZVN3320FTA | Diodes Incorporated |
Description: MOSFET N-CH 200V 60MA SOT23-3FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 330mW (Ta) Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V Current - Continuous Drain (Id) @ 25°C: 60mA (Ta) |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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ZVN3320FTA | Diodes Incorporated |
Description: MOSFET N-CH 200V 60MA SOT23-3Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 330mW (Ta) Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V Current - Continuous Drain (Id) @ 25°C: 60mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
на замовлення 40243 шт: термін постачання 21-31 дні (днів) |
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ZVN4206GTA | Diodes Incorporated |
Description: MOSFET N-CH 60V 1A SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V |
на замовлення 50000 шт: термін постачання 21-31 дні (днів) |
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ZVN4206GTA | Diodes Incorporated |
Description: MOSFET N-CH 60V 1A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V |
на замовлення 50483 шт: термін постачання 21-31 дні (днів) |
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ZVN4210A | Diodes Incorporated |
Description: MOSFET N-CH 100V 450MA TO92-3Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-92 Vgs(th) (Max) @ Id: 2.4V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
на замовлення 14023 шт: термін постачання 21-31 дні (днів) |
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ZVN4306A | Diodes Incorporated |
Description: MOSFET N-CH 60V 1.1A TO92-3Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-92 Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 850mW (Ta) Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
на замовлення 63431 шт: термін постачання 21-31 дні (днів) |
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ZVN4310A | Diodes Incorporated |
Description: MOSFET N-CH 100V 900MA TO92-3Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-92 Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 850mW (Ta) Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
на замовлення 39710 шт: термін постачання 21-31 дні (днів) |
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ZVNL110GTA | Diodes Incorporated |
Description: MOSFET N-CH 100V 600MA SOT223 |
на замовлення 17000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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ZVNL110GTA | Diodes Incorporated |
Description: MOSFET N-CH 100V 600MA SOT223 |
на замовлення 18589 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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ZVNL120A | Diodes Incorporated |
Description: MOSFET N-CH 200V 180MA TO92-3Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Part Status: Active Supplier Device Package: TO-92 Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
на замовлення 13894 шт: термін постачання 21-31 дні (днів) |
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ZVNL120GTA | Diodes Incorporated |
Description: MOSFET N-CH 200V 320MA SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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ZVNL120GTA | Diodes Incorporated |
Description: MOSFET N-CH 200V 320MA SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V |
на замовлення 2293 шт: термін постачання 21-31 дні (днів) |
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ZVP0545A | Diodes Incorporated |
Description: MOSFET P-CH 450V 45MA TO92-3Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V Drain to Source Voltage (Vdss): 450 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-92 Vgs(th) (Max) @ Id: 4.5V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 150Ohm @ 50mA, 10V Current - Continuous Drain (Id) @ 25°C: 45mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
на замовлення 10831 шт: термін постачання 21-31 дні (днів) |
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ZVP2106GTA | Diodes Incorporated |
Description: MOSFET P-CH 60V 450MA SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 18 V |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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ZVP2106GTA | Diodes Incorporated |
Description: MOSFET P-CH 60V 450MA SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 18 V |
на замовлення 17659 шт: термін постачання 21-31 дні (днів) |
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ZVP2110GTA | Diodes Incorporated |
Description: MOSFET P-CH 100V 310MA SOT223Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-223-3 Vgs(th) (Max) @ Id: 3.5V @ 1mA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 375mA, 10V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ZVP2110GTA | Diodes Incorporated |
Description: MOSFET P-CH 100V 310MA SOT223Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-223-3 Vgs(th) (Max) @ Id: 3.5V @ 1mA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 375mA, 10V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
на замовлення 4580 шт: термін постачання 21-31 дні (днів) |
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ZVP2120A | Diodes Incorporated |
Description: MOSFET P-CH 200V 120MA TO92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) Rds On (Max) @ Id, Vgs: 25Ohm @ 150mA, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: TO-92 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ZVP4105A | Diodes Incorporated |
Description: MOSFET P-CH 50V 175MA TO92-3Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Obsolete Supplier Device Package: TO-92 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Current - Continuous Drain (Id) @ 25°C: 175mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FMMT618TA | Diodes Incorporated |
Description: TRANS NPN 20V 2.5A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 2.5A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V Frequency - Transition: 140MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 625 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FMMT618TA | Diodes Incorporated |
Description: TRANS NPN 20V 2.5A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 2.5A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V Frequency - Transition: 140MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 625 mW |
на замовлення 4561 шт: термін постачання 21-31 дні (днів) |
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FMMT619TA | Diodes Incorporated |
Description: TRANS NPN 50V 2A SOT-23-3Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 2 A Part Status: Active Supplier Device Package: SOT-23-3 Frequency - Transition: 165MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 2A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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FMMT619TA | Diodes Incorporated |
Description: TRANS NPN 50V 2A SOT-23-3Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 2 A Part Status: Active Supplier Device Package: SOT-23-3 Frequency - Transition: 165MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 2A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 34768 шт: термін постачання 21-31 дні (днів) |
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FMMT624TA | Diodes Incorporated |
Description: TRANS NPN 125V 1A SOT-23-3Qualification: AEC-Q101 Grade: Automotive Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 125 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: SOT-23-3 Frequency - Transition: 155MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 10V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 51000 шт: термін постачання 21-31 дні (днів) |
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FMMT624TA | Diodes Incorporated |
Description: TRANS NPN 125V 1A SOT-23-3Qualification: AEC-Q101 Grade: Automotive Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 125 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: SOT-23-3 Frequency - Transition: 155MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 10V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 53176 шт: термін постачання 21-31 дні (днів) |
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FMMT625TA | Diodes Incorporated |
Description: TRANS NPN 150V 1A SOT-23-3Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 150 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: SOT-23-3 Frequency - Transition: 135MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 10V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 17950 шт: термін постачання 21-31 дні (днів) |
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FMMT625TA | Diodes Incorporated |
Description: TRANS NPN 150V 1A SOT-23-3Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 150 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: SOT-23-3 Frequency - Transition: 135MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 10V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 17958 шт: термін постачання 21-31 дні (днів) |
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FMMT718TA | Diodes Incorporated |
Description: TRANS PNP 20V 1.5A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 1.5A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Frequency - Transition: 180MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 625 mW |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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FMMT718TA | Diodes Incorporated |
Description: TRANS PNP 20V 1.5A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 1.5A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Frequency - Transition: 180MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 625 mW |
на замовлення 11623 шт: термін постачання 21-31 дні (днів) |
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FMMT720TA | Diodes Incorporated |
Description: TRANS PNP 40V 1.5A SOT-23-3Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 1.5 A Part Status: Active Supplier Device Package: SOT-23-3 Frequency - Transition: 190MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1.5A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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FMMT720TA | Diodes Incorporated |
Description: TRANS PNP 40V 1.5A SOT-23-3DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1.5A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Part Status: Active Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 1.5 A Supplier Device Package: SOT-23-3 Frequency - Transition: 190MHz |
на замовлення 29584 шт: термін постачання 21-31 дні (днів) |
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FMMT722TA | Diodes Incorporated |
Description: TRANS PNP 70V 1.5A SOT-23-3Part Status: Active Supplier Device Package: SOT-23-3 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 70 V Current - Collector (Ic) (Max): 1.5 A |
на замовлення 69000 шт: термін постачання 21-31 дні (днів) |
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FMMT722TA | Diodes Incorporated |
Description: TRANS PNP 70V 1.5A SOT-23-3Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 70 V Current - Collector (Ic) (Max): 1.5 A Part Status: Active Supplier Device Package: SOT-23-3 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 71506 шт: термін постачання 21-31 дні (днів) |
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FMMT723TA | Diodes Incorporated |
Description: TRANS PNP 100V 1A SOT-23-3DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 10V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 330mV @ 150mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: SOT-23-3 Frequency - Transition: 200MHz |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FMMT723TA | Diodes Incorporated |
Description: TRANS PNP 100V 1A SOT-23-3Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 10V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 330mV @ 150mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: SOT-23-3 |
на замовлення 3563 шт: термін постачання 21-31 дні (днів) |
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1N4003G-T | Diodes Incorporated |
Description: DIODE STANDARD 200V 1A DO41Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 17263 шт: термін постачання 21-31 дні (днів) |
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1N4004G-T | Diodes Incorporated |
Description: DIODE STANDARD 400V 1A DO41Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1 Voltage Coupled to Current - Reverse Leakage @ Vr: 400 |
на замовлення 13003 шт: термін постачання 21-31 дні (днів) |
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1N4005-T | Diodes Incorporated |
Description: DIODE STANDARD 600V 1A DO41Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4005G-T | Diodes Incorporated |
Description: DIODE STANDARD 600V 1A DO41Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 55476 шт: термін постачання 21-31 дні (днів) |
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FZT849TA | Diodes Incorporated |
Description: TRANS NPN 30V 7A SOT-223-3Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 6.5A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-223-3 Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 3 W |
на замовлення 10724 шт: термін постачання 21-31 дні (днів) |
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1N4006G-T | Diodes Incorporated |
Description: DIODE STANDARD 800V 1A DO41Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 37785 шт: термін постачання 21-31 дні (днів) |
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FCX491TA | Diodes Incorporated |
Description: TRANS NPN 60V 1A SOT-89-3Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: SOT-89-3 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
на замовлення 4491 шт: термін постачання 21-31 дні (днів) |
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1N4006-T | Diodes Incorporated |
Description: DIODE STANDARD 800V 1A DO41Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4007G-T | Diodes Incorporated |
Description: DIODE STANDARD 1000V 1A DO41Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 41345 шт: термін постачання 21-31 дні (днів) |
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BAW56-7 | Diodes Incorporated |
Description: DIODE ARRAY GP 75V 300MA SOT23-3Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Voltage - DC Reverse (Vr) (Max): 75 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: SOT-23-3 Current - Average Rectified (Io) (per Diode): 300mA (DC) Diode Configuration: 1 Pair Common Anode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAT54S-7 | Diodes Incorporated |
Description: DIODE ARR SCHOTT 30V 200MA SOT23Current - Reverse Leakage @ Vr: 2 µA @ 25 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: SOT-23-3 Current - Average Rectified (Io) (per Diode): 200mA (DC) Diode Configuration: 1 Pair Series Connection Technology: Schottky Reverse Recovery Time (trr): 5 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAT54-7 | Diodes Incorporated |
Description: DIODE SCHOTTKY 30V 200MA SOT23-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BAS21-7 | Diodes Incorporated |
Description: DIODE STANDARD 200V 200MA SOT233 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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S1MB-13 | Diodes Incorporated |
Description: DIODE STANDARD 1000V 1A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S1KB-13 | Diodes Incorporated |
Description: DIODE STANDARD 800V 1A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S1GB-13 | Diodes Incorporated |
Description: DIODE STANDARD 400V 1A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1 Voltage Coupled to Current - Reverse Leakage @ Vr: 400 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S1DB-13 | Diodes Incorporated |
Description: DIODE STANDARD 200V 1A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S1AB-13 | Diodes Incorporated |
Description: DIODE STANDARD 50V 1A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBT2907A-7 | Diodes Incorporated |
Description: TRANS PNP 60V 0.6A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 300 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FR1M-13 | Diodes Incorporated |
Description: DIODE STANDARD 1000V 1A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FR1J-13 | Diodes Incorporated |
Description: DIODE GEN PURP 600V 1A SMB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FR1G-13 | Diodes Incorporated |
Description: DIODE GEN PURP 400V 1A SMB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FR1B-13 | Diodes Incorporated |
Description: DIODE GEN PURP 100V 1A SMB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SBL845 | Diodes Incorporated |
Description: DIODE SCHOTTKY 45V 8A TO220ACCurrent - Reverse Leakage @ Vr: 500 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 8A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SBL2045CT | Diodes Incorporated |
Description: DIODE ARR SCHOTT 45V 20A TO2203Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. |
| ZVN3320FTA |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 200V 60MA SOT23-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 330mW (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 60mA (Ta)
Description: MOSFET N-CH 200V 60MA SOT23-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 330mW (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 60mA (Ta)
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 13.64 грн |
| 6000+ | 12.06 грн |
| 9000+ | 11.95 грн |
| ZVN3320FTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 200V 60MA SOT23-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 330mW (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 60mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 200V 60MA SOT23-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 330mW (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 60mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 40243 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.92 грн |
| 10+ | 36.57 грн |
| 100+ | 23.68 грн |
| 500+ | 17.01 грн |
| 1000+ | 15.33 грн |
| ZVN4206GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Description: MOSFET N-CH 60V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 29.44 грн |
| 2000+ | 26.03 грн |
| 3000+ | 24.85 грн |
| 5000+ | 22.08 грн |
| 7000+ | 21.49 грн |
| ZVN4206GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Description: MOSFET N-CH 60V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
на замовлення 50483 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 101.27 грн |
| 10+ | 61.48 грн |
| 100+ | 40.89 грн |
| 500+ | 30.09 грн |
| ZVN4210A |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 450MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: MOSFET N-CH 100V 450MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
на замовлення 14023 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 72.00 грн |
| 10+ | 45.79 грн |
| 100+ | 31.79 грн |
| 500+ | 24.09 грн |
| 1000+ | 21.88 грн |
| 4000+ | 20.66 грн |
| 8000+ | 19.50 грн |
| ZVN4306A |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 1.1A TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 850mW (Ta)
Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: MOSFET N-CH 60V 1.1A TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 850mW (Ta)
Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
на замовлення 63431 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 160.61 грн |
| 10+ | 99.04 грн |
| 100+ | 67.26 грн |
| 500+ | 50.35 грн |
| 1000+ | 46.24 грн |
| 4000+ | 40.73 грн |
| ZVN4310A |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 900MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 850mW (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: MOSFET N-CH 100V 900MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 850mW (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
на замовлення 39710 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 145.57 грн |
| 10+ | 89.90 грн |
| 100+ | 61.04 грн |
| 500+ | 45.69 грн |
| 1000+ | 41.96 грн |
| 4000+ | 36.96 грн |
| ZVNL110GTA |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 600MA SOT223
Description: MOSFET N-CH 100V 600MA SOT223
на замовлення 17000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| ZVNL110GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 600MA SOT223
Description: MOSFET N-CH 100V 600MA SOT223
на замовлення 18589 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| ZVNL120A |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 200V 180MA TO92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Part Status: Active
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Description: MOSFET N-CH 200V 180MA TO92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Part Status: Active
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
на замовлення 13894 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 53.01 грн |
| 10+ | 44.65 грн |
| 100+ | 30.90 грн |
| 500+ | 24.23 грн |
| 1000+ | 20.62 грн |
| 4000+ | 18.37 грн |
| 8000+ | 17.12 грн |
| 12000+ | 16.17 грн |
| ZVNL120GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 200V 320MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Description: MOSFET N-CH 200V 320MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 26.74 грн |
| 2000+ | 23.60 грн |
| ZVNL120GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 200V 320MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Description: MOSFET N-CH 200V 320MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
на замовлення 2293 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 92.57 грн |
| 10+ | 56.45 грн |
| 100+ | 37.35 грн |
| 500+ | 27.38 грн |
| ZVP0545A |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 450V 45MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
Drain to Source Voltage (Vdss): 450 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 150Ohm @ 50mA, 10V
Current - Continuous Drain (Id) @ 25°C: 45mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: MOSFET P-CH 450V 45MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
Drain to Source Voltage (Vdss): 450 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 150Ohm @ 50mA, 10V
Current - Continuous Drain (Id) @ 25°C: 45mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
на замовлення 10831 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 82.28 грн |
| 10+ | 59.65 грн |
| 100+ | 42.31 грн |
| 500+ | 37.81 грн |
| ZVP2106GTA |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 450MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 18 V
Description: MOSFET P-CH 60V 450MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 18 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 38.75 грн |
| 2000+ | 34.36 грн |
| 3000+ | 32.86 грн |
| 5000+ | 29.25 грн |
| 7000+ | 28.32 грн |
| 10000+ | 27.41 грн |
| ZVP2106GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 450MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 18 V
Description: MOSFET P-CH 60V 450MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 18 V
на замовлення 17659 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 125.79 грн |
| 10+ | 77.18 грн |
| 100+ | 51.72 грн |
| 500+ | 38.31 грн |
| ZVP2110GTA |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 100V 310MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 375mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 100V 310MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 375mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 38.75 грн |
| 2000+ | 34.36 грн |
| 3000+ | 32.86 грн |
| ZVP2110GTA |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 100V 310MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 375mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 100V 310MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 375mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
на замовлення 4580 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 125.79 грн |
| 10+ | 77.18 грн |
| 100+ | 51.72 грн |
| 500+ | 38.31 грн |
| ZVP2120A |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 200V 120MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 150mA, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Description: MOSFET P-CH 200V 120MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 150mA, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| ZVP4105A |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 50V 175MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Current - Continuous Drain (Id) @ 25°C: 175mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: MOSFET P-CH 50V 175MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Current - Continuous Drain (Id) @ 25°C: 175mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| FMMT618TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 20V 2.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 2.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
Description: TRANS NPN 20V 2.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 2.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 11.82 грн |
| FMMT618TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 20V 2.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 2.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
Description: TRANS NPN 20V 2.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 2.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
на замовлення 4561 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 47.47 грн |
| 11+ | 28.57 грн |
| 100+ | 18.39 грн |
| 500+ | 13.12 грн |
| 1000+ | 11.78 грн |
| FMMT619TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 50V 2A SOT-23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 165MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS NPN 50V 2A SOT-23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 165MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.60 грн |
| 6000+ | 8.43 грн |
| 9000+ | 8.02 грн |
| 15000+ | 7.09 грн |
| 21000+ | 6.84 грн |
| 30000+ | 6.59 грн |
| FMMT619TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 50V 2A SOT-23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 165MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN 50V 2A SOT-23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 165MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 34768 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.72 грн |
| 13+ | 25.07 грн |
| 100+ | 16.01 грн |
| 500+ | 11.36 грн |
| 1000+ | 10.18 грн |
| FMMT624TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 125V 1A SOT-23-3
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 125 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 155MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS NPN 125V 1A SOT-23-3
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 125 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 155MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 13.81 грн |
| 6000+ | 12.22 грн |
| 9000+ | 11.66 грн |
| 15000+ | 10.36 грн |
| 21000+ | 10.02 грн |
| 30000+ | 9.80 грн |
| FMMT624TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 125V 1A SOT-23-3
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 125 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 155MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN 125V 1A SOT-23-3
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 125 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 155MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 53176 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.75 грн |
| 10+ | 34.59 грн |
| 100+ | 22.41 грн |
| 500+ | 16.10 грн |
| 1000+ | 14.50 грн |
| FMMT625TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 150V 1A SOT-23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 135MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS NPN 150V 1A SOT-23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 135MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 17950 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 13.72 грн |
| 6000+ | 12.13 грн |
| 9000+ | 11.58 грн |
| 15000+ | 10.29 грн |
| FMMT625TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 150V 1A SOT-23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 135MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN 150V 1A SOT-23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 135MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 17958 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.75 грн |
| 10+ | 34.36 грн |
| 100+ | 22.25 грн |
| 500+ | 15.99 грн |
| 1000+ | 14.41 грн |
| FMMT718TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 20V 1.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 1.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
Description: TRANS PNP 20V 1.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 1.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 10.76 грн |
| 6000+ | 9.46 грн |
| 9000+ | 9.01 грн |
| FMMT718TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 20V 1.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 1.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
Description: TRANS PNP 20V 1.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 1.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
на замовлення 11623 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 46.68 грн |
| 11+ | 27.81 грн |
| 100+ | 17.84 грн |
| 500+ | 12.69 грн |
| 1000+ | 11.38 грн |
| FMMT720TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 40V 1.5A SOT-23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 190MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS PNP 40V 1.5A SOT-23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 190MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 11.27 грн |
| 6000+ | 9.93 грн |
| 9000+ | 9.46 грн |
| 15000+ | 8.39 грн |
| 21000+ | 8.09 грн |
| FMMT720TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 40V 1.5A SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Part Status: Active
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: SOT-23-3
Frequency - Transition: 190MHz
Description: TRANS PNP 40V 1.5A SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Part Status: Active
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: SOT-23-3
Frequency - Transition: 190MHz
на замовлення 29584 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 48.26 грн |
| 11+ | 28.87 грн |
| 100+ | 18.55 грн |
| 500+ | 13.24 грн |
| 1000+ | 11.89 грн |
| FMMT722TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 70V 1.5A SOT-23-3
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 70 V
Current - Collector (Ic) (Max): 1.5 A
Description: TRANS PNP 70V 1.5A SOT-23-3
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 70 V
Current - Collector (Ic) (Max): 1.5 A
на замовлення 69000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 11.66 грн |
| 6000+ | 10.38 грн |
| FMMT722TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 70V 1.5A SOT-23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 70 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PNP 70V 1.5A SOT-23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 70 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 71506 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.75 грн |
| 10+ | 34.36 грн |
| 100+ | 22.25 грн |
| 500+ | 15.99 грн |
| 1000+ | 14.41 грн |
| FMMT723TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 100V 1A SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 150mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 200MHz
Description: TRANS PNP 100V 1A SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 150mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 200MHz
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 13.81 грн |
| FMMT723TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 100V 1A SOT-23-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 150mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Description: TRANS PNP 100V 1A SOT-23-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 150mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
на замовлення 3563 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.75 грн |
| 10+ | 34.59 грн |
| 100+ | 22.41 грн |
| 500+ | 16.10 грн |
| 1000+ | 14.50 грн |
| 1N4003G-T |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 200V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 17263 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 12.66 грн |
| 37+ | 8.46 грн |
| 100+ | 7.08 грн |
| 500+ | 4.89 грн |
| 1000+ | 4.21 грн |
| 2000+ | 3.85 грн |
| 1N4004G-T |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 400V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 400
Description: DIODE STANDARD 400V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 400
на замовлення 13003 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 18.20 грн |
| 29+ | 10.82 грн |
| 100+ | 6.73 грн |
| 500+ | 4.64 грн |
| 1000+ | 4.09 грн |
| 2000+ | 3.63 грн |
| 1N4005-T |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 600V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N4005G-T |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 600V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 55476 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 19.78 грн |
| 27+ | 11.50 грн |
| 100+ | 7.16 грн |
| 500+ | 4.94 грн |
| 1000+ | 4.36 грн |
| 2000+ | 3.88 грн |
| FZT849TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 30V 7A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 6.5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 3 W
Description: TRANS NPN 30V 7A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 6.5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 3 W
на замовлення 10724 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 123.42 грн |
| 10+ | 74.97 грн |
| 100+ | 50.27 грн |
| 500+ | 37.21 грн |
| 1N4006G-T |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 800V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE STANDARD 800V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 37785 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 15.03 грн |
| 32+ | 9.52 грн |
| 100+ | 7.90 грн |
| 500+ | 5.49 грн |
| 1000+ | 4.71 грн |
| 2000+ | 4.33 грн |
| FCX491TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 60V 1A SOT-89-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-89-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: TRANS NPN 60V 1A SOT-89-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-89-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
на замовлення 4491 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 51.43 грн |
| 10+ | 30.70 грн |
| 100+ | 19.73 грн |
| 500+ | 14.10 грн |
| 1N4006-T |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 800V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE STANDARD 800V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N4007G-T |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 1000V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 41345 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 18.20 грн |
| 29+ | 10.82 грн |
| 100+ | 6.73 грн |
| 500+ | 4.64 грн |
| 1000+ | 4.09 грн |
| 2000+ | 3.63 грн |
| BAW56-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ARRAY GP 75V 300MA SOT23-3
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Diode Configuration: 1 Pair Common Anode
Description: DIODE ARRAY GP 75V 300MA SOT23-3
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Diode Configuration: 1 Pair Common Anode
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| BAT54S-7 |
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Виробник: Diodes Incorporated
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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| BAT54-7 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 30V 200MA SOT23-3
Description: DIODE SCHOTTKY 30V 200MA SOT23-3
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| BAS21-7 |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 200V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Description: DIODE STANDARD 200V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
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| S1MB-13 |
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Виробник: Diodes Incorporated
Description: DIODE STANDARD 1000V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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| S1KB-13 |
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Виробник: Diodes Incorporated
Description: DIODE STANDARD 800V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE STANDARD 800V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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| S1GB-13 |
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Виробник: Diodes Incorporated
Description: DIODE STANDARD 400V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 400
Description: DIODE STANDARD 400V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 400
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| S1DB-13 |
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Виробник: Diodes Incorporated
Description: DIODE STANDARD 200V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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| S1AB-13 |
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Виробник: Diodes Incorporated
Description: DIODE STANDARD 50V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE STANDARD 50V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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| MMBT2907A-7 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 60V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
Description: TRANS PNP 60V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
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| FR1M-13 |
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Виробник: Diodes Incorporated
Description: DIODE STANDARD 1000V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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| FR1J-13 |
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Виробник: Diodes Incorporated
Description: DIODE GEN PURP 600V 1A SMB
Description: DIODE GEN PURP 600V 1A SMB
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| FR1G-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 400V 1A SMB
Description: DIODE GEN PURP 400V 1A SMB
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| FR1B-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 100V 1A SMB
Description: DIODE GEN PURP 100V 1A SMB
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| SBL845 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 45V 8A TO220AC
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SCHOTTKY 45V 8A TO220AC
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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| SBL2045CT |
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Виробник: Diodes Incorporated
Description: DIODE ARR SCHOTT 45V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Description: DIODE ARR SCHOTT 45V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
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