Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (73723) > Сторінка 12 з 1229
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ZVN4306A | Diodes Incorporated |
Description: MOSFET N-CH 60V 1.1A TO92-3Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-92 Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 850mW (Ta) Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
на замовлення 63431 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
ZVN4310A | Diodes Incorporated |
Description: MOSFET N-CH 100V 900MA TO92-3Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-92 Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 850mW (Ta) Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
на замовлення 39710 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
ZVNL110GTA | Diodes Incorporated |
Description: MOSFET N-CH 100V 600MA SOT223 |
на замовлення 17000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
|
ZVNL110GTA | Diodes Incorporated |
Description: MOSFET N-CH 100V 600MA SOT223 |
на замовлення 18589 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
|
ZVNL120A | Diodes Incorporated |
Description: MOSFET N-CH 200V 180MA TO92-3Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Part Status: Active Supplier Device Package: TO-92 Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
на замовлення 13894 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
ZVNL120GTA | Diodes Incorporated |
Description: MOSFET N-CH 200V 320MA SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
ZVNL120GTA | Diodes Incorporated |
Description: MOSFET N-CH 200V 320MA SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V |
на замовлення 2293 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
ZVP0545A | Diodes Incorporated |
Description: MOSFET P-CH 450V 45MA TO92-3Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V Drain to Source Voltage (Vdss): 450 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-92 Vgs(th) (Max) @ Id: 4.5V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 150Ohm @ 50mA, 10V Current - Continuous Drain (Id) @ 25°C: 45mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
на замовлення 2426 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
ZVP2106GTA | Diodes Incorporated |
Description: MOSFET P-CH 60V 450MA SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 18 V |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
ZVP2106GTA | Diodes Incorporated |
Description: MOSFET P-CH 60V 450MA SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 18 V |
на замовлення 23691 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
ZVP2110GTA | Diodes Incorporated |
Description: MOSFET P-CH 100V 310MA SOT223Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-223-3 Vgs(th) (Max) @ Id: 3.5V @ 1mA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 375mA, 10V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
ZVP2110GTA | Diodes Incorporated |
Description: MOSFET P-CH 100V 310MA SOT223Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-223-3 Vgs(th) (Max) @ Id: 3.5V @ 1mA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 375mA, 10V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
на замовлення 3965 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
ZVP2120A | Diodes Incorporated |
Description: MOSFET P-CH 200V 120MA TO92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) Rds On (Max) @ Id, Vgs: 25Ohm @ 150mA, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: TO-92 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
ZVP4105A | Diodes Incorporated |
Description: MOSFET P-CH 50V 175MA TO92-3Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Obsolete Supplier Device Package: TO-92 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Current - Continuous Drain (Id) @ 25°C: 175mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
FMMT618TA | Diodes Incorporated |
Description: TRANS NPN 20V 2.5A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 2.5A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V Frequency - Transition: 140MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 625 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FMMT618TA | Diodes Incorporated |
Description: TRANS NPN 20V 2.5A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 2.5A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V Frequency - Transition: 140MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 625 mW |
на замовлення 4842 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FMMT619TA | Diodes Incorporated |
Description: TRANS NPN 50V 2A SOT-23-3Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 2 A Part Status: Active Supplier Device Package: SOT-23-3 Frequency - Transition: 165MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 2A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FMMT619TA | Diodes Incorporated |
Description: TRANS NPN 50V 2A SOT-23-3Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 2 A Part Status: Active Supplier Device Package: SOT-23-3 Frequency - Transition: 165MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 2A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 27973 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FMMT624TA | Diodes Incorporated |
Description: TRANS NPN 125V 1A SOT-23-3Qualification: AEC-Q101 Grade: Automotive Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 125 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: SOT-23-3 Frequency - Transition: 155MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 10V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FMMT624TA | Diodes Incorporated |
Description: TRANS NPN 125V 1A SOT-23-3Qualification: AEC-Q101 Grade: Automotive Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 125 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: SOT-23-3 Frequency - Transition: 155MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 10V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 25205 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FMMT625TA | Diodes Incorporated |
Description: TRANS NPN 150V 1A SOT-23-3Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 150 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: SOT-23-3 Frequency - Transition: 135MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 10V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 17950 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FMMT625TA | Diodes Incorporated |
Description: TRANS NPN 150V 1A SOT-23-3Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 150 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: SOT-23-3 Frequency - Transition: 135MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 10V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 17958 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FMMT718TA | Diodes Incorporated |
Description: TRANS PNP 20V 1.5A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 1.5A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Frequency - Transition: 180MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 625 mW |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FMMT718TA | Diodes Incorporated |
Description: TRANS PNP 20V 1.5A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 1.5A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Frequency - Transition: 180MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 625 mW |
на замовлення 48891 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FMMT720TA | Diodes Incorporated |
Description: TRANS PNP 40V 1.5A SOT-23-3Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 1.5 A Part Status: Active Supplier Device Package: SOT-23-3 Frequency - Transition: 190MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1.5A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FMMT720TA | Diodes Incorporated |
Description: TRANS PNP 40V 1.5A SOT-23-3DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1.5A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Part Status: Active Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 1.5 A Supplier Device Package: SOT-23-3 Frequency - Transition: 190MHz |
на замовлення 29584 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FMMT722TA | Diodes Incorporated |
Description: TRANS PNP 70V 1.5A SOT-23-3Part Status: Active Supplier Device Package: SOT-23-3 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 70 V Current - Collector (Ic) (Max): 1.5 A |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FMMT722TA | Diodes Incorporated |
Description: TRANS PNP 70V 1.5A SOT-23-3Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 70 V Current - Collector (Ic) (Max): 1.5 A Part Status: Active Supplier Device Package: SOT-23-3 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 17123 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FMMT723TA | Diodes Incorporated |
Description: TRANS PNP 100V 1A SOT-23-3DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 10V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 330mV @ 150mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: SOT-23-3 Frequency - Transition: 200MHz |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FMMT723TA | Diodes Incorporated |
Description: TRANS PNP 100V 1A SOT-23-3Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 10V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 330mV @ 150mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: SOT-23-3 |
на замовлення 3563 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
1N4003G-T | Diodes Incorporated |
Description: DIODE STANDARD 200V 1A DO41Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 24264 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
1N4004G-T | Diodes Incorporated |
Description: DIODE STANDARD 400V 1A DO41Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1 Voltage Coupled to Current - Reverse Leakage @ Vr: 400 |
на замовлення 338795 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
1N4005-T | Diodes Incorporated |
Description: DIODE STANDARD 600V 1A DO41Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
1N4005G-T | Diodes Incorporated |
Description: DIODE STANDARD 600V 1A DO41Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 44130 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FZT849TA | Diodes Incorporated |
Description: TRANS NPN 30V 7A SOT-223-3Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 6.5A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-223-3 Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 3 W |
на замовлення 561 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
1N4006G-T | Diodes Incorporated |
Description: DIODE STANDARD 800V 1A DO41Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 5741 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
FCX491TA | Diodes Incorporated |
Description: TRANS NPN 60V 1A SOT-89-3Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: SOT-89-3 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
на замовлення 4491 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
1N4006-T | Diodes Incorporated |
Description: DIODE STANDARD 800V 1A DO41Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
1N4007G-T | Diodes Incorporated |
Description: DIODE STANDARD 1000V 1A DO41Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 214517 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
BAW56-7 | Diodes Incorporated |
Description: DIODE ARRAY GP 75V 300MA SOT23-3Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Voltage - DC Reverse (Vr) (Max): 75 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: SOT-23-3 Current - Average Rectified (Io) (per Diode): 300mA (DC) Diode Configuration: 1 Pair Common Anode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
BAT54S-7 | Diodes Incorporated |
Description: DIODE ARR SCHOTT 30V 200MA SOT23Current - Reverse Leakage @ Vr: 2 µA @ 25 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: SOT-23-3 Current - Average Rectified (Io) (per Diode): 200mA (DC) Diode Configuration: 1 Pair Series Connection Technology: Schottky Reverse Recovery Time (trr): 5 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||||||
|
BAT54-7 | Diodes Incorporated |
Description: DIODE SCHOTTKY 30V 200MA SOT23-3 |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||||||
| BAS21-7 | Diodes Incorporated |
Description: DIODE STANDARD 200V 200MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | |||||||||||||||||
|
S1MB-13 | Diodes Incorporated |
Description: DIODE STANDARD 1000V 1A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||||||
|
S1KB-13 | Diodes Incorporated |
Description: DIODE STANDARD 800V 1A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||||||
|
S1GB-13 | Diodes Incorporated |
Description: DIODE STANDARD 400V 1A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1 Voltage Coupled to Current - Reverse Leakage @ Vr: 400 |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||||||
|
S1DB-13 | Diodes Incorporated |
Description: DIODE STANDARD 200V 1A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||||||
|
S1AB-13 | Diodes Incorporated |
Description: DIODE STANDARD 50V 1A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
MMBT2907A-7 | Diodes Incorporated |
Description: TRANS PNP 60V 0.6A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 300 mW |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||||||
|
FR1M-13 | Diodes Incorporated |
Description: DIODE STANDARD 1000V 1A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
|
FR1J-13 | Diodes Incorporated |
Description: DIODE GEN PURP 600V 1A SMB |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||||||
|
FR1G-13 | Diodes Incorporated |
Description: DIODE GEN PURP 400V 1A SMB |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||||||
|
FR1B-13 | Diodes Incorporated |
Description: DIODE STANDARD 100V 1A SMB |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
SBL845 | Diodes Incorporated |
Description: DIODE SCHOTTKY 45V 8A TO220ACCurrent - Reverse Leakage @ Vr: 500 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 8A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
SBL2045CT | Diodes Incorporated |
Description: DIODE ARR SCHOTT 45V 20A TO2203Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
SBL1645 | Diodes Incorporated |
Description: DIODE SCHOTTKY 45V 16A TO220ACVoltage - DC Reverse (Vr) (Max): 45 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 16A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Current - Reverse Leakage @ Vr: 1 mA @ 45 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 16 A |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||||
|
SBL1645CT | Diodes Incorporated |
Description: DIODE ARRAY SCHOTTKY 45V TO220ABPart Status: Obsolete Packaging: Tube |
на замовлення 2732 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
SBL1045CT | Diodes Incorporated |
Description: DIODE ARR SCHOTT 45V 10A TO2203 |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||||
|
RL207-T | Diodes Incorporated |
Description: DIODE STANDARD 1000V 2A DO15Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
|
RL206-T | Diodes Incorporated |
Description: DIODE STANDARD 800V 2A DO15Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. |
| ZVN4306A |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 1.1A TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 850mW (Ta)
Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: MOSFET N-CH 60V 1.1A TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 850mW (Ta)
Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
на замовлення 63431 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 159.11 грн |
| 10+ | 98.12 грн |
| 100+ | 66.64 грн |
| 500+ | 49.88 грн |
| 1000+ | 45.81 грн |
| 4000+ | 40.35 грн |
| ZVN4310A |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 900MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 850mW (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: MOSFET N-CH 100V 900MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 850mW (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
на замовлення 39710 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 144.22 грн |
| 10+ | 89.06 грн |
| 100+ | 60.47 грн |
| 500+ | 45.26 грн |
| 1000+ | 41.57 грн |
| 4000+ | 36.62 грн |
| ZVNL110GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 600MA SOT223
Description: MOSFET N-CH 100V 600MA SOT223
на замовлення 17000 шт:
термін постачання 21-31 дні (днів)
| ZVNL110GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 600MA SOT223
Description: MOSFET N-CH 100V 600MA SOT223
на замовлення 18589 шт:
термін постачання 21-31 дні (днів)
| ZVNL120A |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 200V 180MA TO92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Part Status: Active
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Description: MOSFET N-CH 200V 180MA TO92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Part Status: Active
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
на замовлення 13894 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 52.52 грн |
| 10+ | 44.23 грн |
| 100+ | 30.61 грн |
| 500+ | 24.01 грн |
| 1000+ | 20.43 грн |
| 4000+ | 18.20 грн |
| 8000+ | 16.96 грн |
| 12000+ | 16.02 грн |
| ZVNL120GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 200V 320MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Description: MOSFET N-CH 200V 320MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 26.49 грн |
| 2000+ | 23.38 грн |
| ZVNL120GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 200V 320MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Description: MOSFET N-CH 200V 320MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
на замовлення 2293 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 91.71 грн |
| 10+ | 55.93 грн |
| 100+ | 37.01 грн |
| 500+ | 27.13 грн |
| ZVP0545A |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 450V 45MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
Drain to Source Voltage (Vdss): 450 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 150Ohm @ 50mA, 10V
Current - Continuous Drain (Id) @ 25°C: 45mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: MOSFET P-CH 450V 45MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
Drain to Source Voltage (Vdss): 450 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 150Ohm @ 50mA, 10V
Current - Continuous Drain (Id) @ 25°C: 45mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
на замовлення 2426 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 163.03 грн |
| 10+ | 100.39 грн |
| 100+ | 68.16 грн |
| 500+ | 51.04 грн |
| 1000+ | 46.88 грн |
| ZVP2106GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 450MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 18 V
Description: MOSFET P-CH 60V 450MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 18 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 42.11 грн |
| 3000+ | 35.71 грн |
| ZVP2106GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 450MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 18 V
Description: MOSFET P-CH 60V 450MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 18 V
на замовлення 23691 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 137.17 грн |
| 10+ | 83.78 грн |
| 25+ | 70.95 грн |
| 50+ | 59.08 грн |
| 100+ | 52.75 грн |
| ZVP2110GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 100V 310MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 375mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 100V 310MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 375mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 42.11 грн |
| 3000+ | 35.71 грн |
| ZVP2110GTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 100V 310MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 375mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 100V 310MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 375mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
на замовлення 3965 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 137.17 грн |
| 10+ | 83.78 грн |
| 25+ | 70.95 грн |
| 50+ | 59.08 грн |
| 100+ | 52.75 грн |
| ZVP2120A |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 200V 120MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 150mA, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Description: MOSFET P-CH 200V 120MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 150mA, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| ZVP4105A |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 50V 175MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Current - Continuous Drain (Id) @ 25°C: 175mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: MOSFET P-CH 50V 175MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Current - Continuous Drain (Id) @ 25°C: 175mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| FMMT618TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 20V 2.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 2.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
Description: TRANS NPN 20V 2.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 2.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 13.69 грн |
| FMMT618TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 20V 2.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 2.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
Description: TRANS NPN 20V 2.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 2.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
на замовлення 4842 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 58.79 грн |
| 10+ | 35.10 грн |
| 25+ | 29.29 грн |
| 50+ | 24.07 грн |
| 100+ | 21.18 грн |
| FMMT619TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 50V 2A SOT-23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 165MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS NPN 50V 2A SOT-23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 165MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 11.07 грн |
| 9000+ | 9.25 грн |
| FMMT619TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 50V 2A SOT-23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 165MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN 50V 2A SOT-23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 165MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 27973 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.60 грн |
| 11+ | 28.91 грн |
| 25+ | 24.06 грн |
| 50+ | 19.72 грн |
| 100+ | 17.33 грн |
| FMMT624TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 125V 1A SOT-23-3
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 125 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 155MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS NPN 125V 1A SOT-23-3
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 125 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 155MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 17.79 грн |
| 6000+ | 15.79 грн |
| 9000+ | 15.11 грн |
| 15000+ | 13.46 грн |
| 21000+ | 13.03 грн |
| FMMT624TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 125V 1A SOT-23-3
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 125 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 155MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN 125V 1A SOT-23-3
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 125 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 155MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 25205 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 72.89 грн |
| 10+ | 43.48 грн |
| 100+ | 28.36 грн |
| 500+ | 20.53 грн |
| 1000+ | 18.57 грн |
| FMMT625TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 150V 1A SOT-23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 135MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS NPN 150V 1A SOT-23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 135MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 17950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 13.59 грн |
| 6000+ | 12.02 грн |
| 9000+ | 11.48 грн |
| 15000+ | 10.20 грн |
| FMMT625TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 150V 1A SOT-23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 135MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN 150V 1A SOT-23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 135MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 17958 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 57.22 грн |
| 10+ | 34.04 грн |
| 100+ | 22.05 грн |
| 500+ | 15.84 грн |
| 1000+ | 14.27 грн |
| FMMT718TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 20V 1.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 1.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
Description: TRANS PNP 20V 1.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 1.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 11.89 грн |
| 9000+ | 9.96 грн |
| FMMT718TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 20V 1.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 1.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
Description: TRANS PNP 20V 1.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 1.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
на замовлення 48891 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.87 грн |
| 10+ | 32.68 грн |
| 25+ | 27.20 грн |
| 50+ | 22.33 грн |
| 100+ | 19.63 грн |
| FMMT720TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 40V 1.5A SOT-23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 190MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS PNP 40V 1.5A SOT-23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 190MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 11.16 грн |
| 6000+ | 9.84 грн |
| 9000+ | 9.37 грн |
| 15000+ | 8.31 грн |
| 21000+ | 8.02 грн |
| FMMT720TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 40V 1.5A SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Part Status: Active
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: SOT-23-3
Frequency - Transition: 190MHz
Description: TRANS PNP 40V 1.5A SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Part Status: Active
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: SOT-23-3
Frequency - Transition: 190MHz
на замовлення 29584 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.81 грн |
| 11+ | 28.61 грн |
| 100+ | 18.38 грн |
| 500+ | 13.12 грн |
| 1000+ | 11.78 грн |
| FMMT722TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 70V 1.5A SOT-23-3
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 70 V
Current - Collector (Ic) (Max): 1.5 A
Description: TRANS PNP 70V 1.5A SOT-23-3
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 70 V
Current - Collector (Ic) (Max): 1.5 A
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 14.39 грн |
| 6000+ | 12.73 грн |
| 9000+ | 12.15 грн |
| 15000+ | 10.80 грн |
| FMMT722TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 70V 1.5A SOT-23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 70 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PNP 70V 1.5A SOT-23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 70 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 17123 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 60.35 грн |
| 10+ | 36.00 грн |
| 100+ | 23.34 грн |
| 500+ | 16.76 грн |
| 1000+ | 15.11 грн |
| FMMT723TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 100V 1A SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 150mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 200MHz
Description: TRANS PNP 100V 1A SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 150mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 200MHz
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 13.69 грн |
| FMMT723TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 100V 1A SOT-23-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 150mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Description: TRANS PNP 100V 1A SOT-23-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 150mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
на замовлення 3563 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 57.22 грн |
| 10+ | 34.27 грн |
| 100+ | 22.20 грн |
| 500+ | 15.95 грн |
| 1000+ | 14.37 грн |
| 1N4003G-T |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 200V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 24264 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.73 грн |
| 23+ | 13.13 грн |
| 28+ | 10.84 грн |
| 50+ | 8.83 грн |
| 100+ | 7.69 грн |
| 1N4004G-T |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 400V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 400
Description: DIODE STANDARD 400V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 400
на замовлення 338795 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.60 грн |
| 26+ | 11.70 грн |
| 32+ | 9.60 грн |
| 50+ | 7.82 грн |
| 100+ | 6.80 грн |
| 1N4005-T |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 600V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N4005G-T |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 600V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 44130 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 21.16 грн |
| 25+ | 12.45 грн |
| 30+ | 10.30 грн |
| 50+ | 8.37 грн |
| 100+ | 7.29 грн |
| FZT849TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 30V 7A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 6.5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 3 W
Description: TRANS NPN 30V 7A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 6.5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 3 W
на замовлення 561 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 125.41 грн |
| 10+ | 76.61 грн |
| 100+ | 51.36 грн |
| 500+ | 38.02 грн |
| 1N4006G-T |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 800V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE STANDARD 800V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 5741 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.08 грн |
| 21+ | 14.94 грн |
| 25+ | 12.32 грн |
| 50+ | 10.04 грн |
| 100+ | 8.76 грн |
| FCX491TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 60V 1A SOT-89-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-89-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: TRANS NPN 60V 1A SOT-89-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-89-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
на замовлення 4491 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.95 грн |
| 10+ | 30.42 грн |
| 100+ | 19.55 грн |
| 500+ | 13.97 грн |
| 1N4006-T |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 800V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE STANDARD 800V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N4007G-T |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 1000V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 214517 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.60 грн |
| 26+ | 11.70 грн |
| 32+ | 9.60 грн |
| 50+ | 7.82 грн |
| 100+ | 6.80 грн |
| BAW56-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ARRAY GP 75V 300MA SOT23-3
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Diode Configuration: 1 Pair Common Anode
Description: DIODE ARRAY GP 75V 300MA SOT23-3
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Diode Configuration: 1 Pair Common Anode
товару немає в наявності
В кошику
од. на суму грн.
| BAT54S-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| BAT54-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 30V 200MA SOT23-3
Description: DIODE SCHOTTKY 30V 200MA SOT23-3
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| BAS21-7 |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 200V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Description: DIODE STANDARD 200V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| S1MB-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 1000V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| S1KB-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 800V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE STANDARD 800V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| S1GB-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 400V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 400
Description: DIODE STANDARD 400V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 400
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| S1DB-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 200V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| S1AB-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 50V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE STANDARD 50V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| MMBT2907A-7 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 60V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
Description: TRANS PNP 60V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| FR1M-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 1000V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FR1J-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 600V 1A SMB
Description: DIODE GEN PURP 600V 1A SMB
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| FR1G-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 400V 1A SMB
Description: DIODE GEN PURP 400V 1A SMB
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| FR1B-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 100V 1A SMB
Description: DIODE STANDARD 100V 1A SMB
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| SBL845 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 45V 8A TO220AC
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SCHOTTKY 45V 8A TO220AC
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| SBL2045CT |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOTT 45V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Description: DIODE ARR SCHOTT 45V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
товару немає в наявності
В кошику
од. на суму грн.
| SBL1645 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 45V 16A TO220AC
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 16 A
Description: DIODE SCHOTTKY 45V 16A TO220AC
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 16 A
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| SBL1645CT |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ARRAY SCHOTTKY 45V TO220AB
Part Status: Obsolete
Packaging: Tube
Description: DIODE ARRAY SCHOTTKY 45V TO220AB
Part Status: Obsolete
Packaging: Tube
на замовлення 2732 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 87.79 грн |
| 50+ | 64.72 грн |
| 100+ | 62.94 грн |
| 500+ | 56.22 грн |
| 1000+ | 55.33 грн |
| 2000+ | 54.59 грн |
| SBL1045CT |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOTT 45V 10A TO2203
Description: DIODE ARR SCHOTT 45V 10A TO2203
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| RL207-T |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 1000V 2A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE STANDARD 1000V 2A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| RL206-T |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 800V 2A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE STANDARD 800V 2A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.












