Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74953) > Сторінка 1247 з 1250
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SMBJ40A-13-F | DIODES INCORPORATED |
 Category: Unidirectional SMD transil diodesDescription: Diode: TVS; 600W; 44.4÷51.1V; 9.3A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 40V Breakdown voltage: 44.4...51.1V Max. forward impulse current: 9.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| D26V0H1U2LP16-7 | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS Type of diode: TVS |
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| D26V0H1U2LP20-7 | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS Type of diode: TVS |
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BAS40DW-04-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.2A; SOT363; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: double series x2 Max. forward voltage: 1V Case: SOT363 Kind of package: reel; tape Max. forward impulse current: 0.6A |
на замовлення 1290 шт: термін постачання 21-30 дні (днів) |
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BAS40DW-05-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.2A; 5ns; SOT363; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Reverse recovery time: 5ns Semiconductor structure: common cathode; double x2 Capacitance: 5pF Max. forward voltage: 1V Case: SOT363 Kind of package: reel; tape Leakage current: 0.2µA Max. forward impulse current: 0.6A Power dissipation: 0.2W |
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| 74AUP1G09FW4-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1010-6; 0.8÷3.6VDC Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: X2-DFN1010-6 Supply voltage: 0.8...3.6V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of output: open drain Family: AUP |
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| 74AUP1G09FW5-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X1-DFN1010-6; 0.8÷3.6VDC Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: X1-DFN1010-6 Supply voltage: 0.8...3.6V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of output: open drain Family: AUP |
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| 74AUP1G09FX4-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1409-6; 0.8÷3.6VDC Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: X2-DFN1409-6 Supply voltage: 0.8...3.6V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of output: open drain Family: AUP |
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| 74AUP1G09FZ4-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1410-6; 0.8÷3.6VDC Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: X2-DFN1410-6 Supply voltage: 0.8...3.6V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of output: open drain Family: AUP |
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| 74AUP1G09SE-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT353; 0.8÷3.6VDC; AUP Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SOT353 Supply voltage: 0.8...3.6V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of output: open drain Family: AUP |
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| AL3069S16-13 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
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| SBR15U50SP5-13 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 15A; 50ns; PowerDI®5; Ufmax: 0.44V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 15A Reverse recovery time: 50ns Semiconductor structure: single diode Max. forward voltage: 0.44V Case: PowerDI®5 Kind of package: reel; tape Leakage current: 50mA Max. forward impulse current: 256A |
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| SBRT15U50SP5-13D | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; Trench SBR®; SMD; 50V; 15A; PowerDI®5 Type of diode: Schottky rectifying Technology: Trench SBR® Mounting: SMD Max. off-state voltage: 50V Load current: 15A Semiconductor structure: single diode Max. forward voltage: 0.47V Case: PowerDI®5 Kind of package: reel; tape Leakage current: 170µA Max. forward impulse current: 290A |
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| SBRT15U50SP5-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; Trench SBR®; SMD; 50V; 15A; PowerDI®5 Type of diode: Schottky rectifying Technology: Trench SBR® Mounting: SMD Max. off-state voltage: 50V Load current: 15A Semiconductor structure: single diode Max. forward voltage: 0.47V Case: PowerDI®5 Kind of package: reel; tape Leakage current: 170µA Max. forward impulse current: 290A |
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KBJ606G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 170A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 6A Max. forward impulse current: 170A Version: flat Case: KBJ Electrical mounting: THT Leads: flat pin Features of semiconductor devices: glass passivated Kind of package: tube |
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MMSZ5257B-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.37/0.5W; 33V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37/0.5W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
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MMSZ5257BS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 33V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
на замовлення 240 шт: термін постачання 21-30 дні (днів) |
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| DMT35M4LFVW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 110A; 1.5W Mounting: SMD Kind of package: reel; tape Power dissipation: 1.5W Polarisation: unipolar Gate charge: 16.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 110A Case: PowerDI®3333-8 Drain-source voltage: 30V Drain current: 13A On-state resistance: 9mΩ Type of transistor: N-MOSFET |
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| DMP6023LEQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -50A; 1.3W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.6A Pulsed drain current: -50A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 53.1nC Kind of package: reel; tape Kind of channel: enhanced |
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| FMMT415TD | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 0.5A Power dissipation: 0.5W Case: SOT23 Pulsed collector current: 60A Mounting: SMD Kind of package: reel; tape |
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SMCJ33CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 28.1A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 1358 шт: термін постачання 21-30 дні (днів) |
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| DRTR5V0U1LP-7B | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
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| DRTR5V0U1LPQ-7B | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
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| DRTR5V0U4LP16-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
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DMN3135LVT-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 25A; 0.84W; TSOT26 Mounting: SMD Kind of package: reel; tape On-state resistance: 60mΩ Type of transistor: N-MOSFET Power dissipation: 0.84W Polarisation: unipolar Case: TSOT26 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 25A Drain-source voltage: 30V Drain current: 2.7A |
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DMN3135LVTQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; Idm: 25A; 1.27W; TSOT26 Mounting: SMD Kind of package: reel; tape On-state resistance: 0.1Ω Type of transistor: N-MOSFET Power dissipation: 1.27W Polarisation: unipolar Gate charge: 9nC Case: TSOT26 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 25A Drain-source voltage: 30V Drain current: 3.3A |
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DMN313DLT-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 1.2A; 520mW; SOT523 Mounting: SMD Kind of package: reel; tape On-state resistance: 3.2Ω Type of transistor: N-MOSFET Power dissipation: 0.52W Polarisation: unipolar Gate charge: 0.5nC Case: SOT523 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1.2A Drain-source voltage: 30V Drain current: 0.3A |
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DMN3150L-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 15A; 1.4W; SOT23 Mounting: SMD Kind of package: reel; tape On-state resistance: 54mΩ Type of transistor: N-MOSFET Power dissipation: 1.4W Polarisation: unipolar Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 15A Drain-source voltage: 30V Drain current: 3.1A |
на замовлення 1815 шт: термін постачання 21-30 дні (днів) |
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DMN3190LDW-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.9A; Idm: 9.6A; 0.32W Mounting: SMD Kind of package: reel; tape On-state resistance: 0.19Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.32W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Case: SOT363 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 9.6A Drain-source voltage: 30V Drain current: 0.9A |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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DMN31D5L-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 400mA; Idm: 5A; 520mW; SOT23 Mounting: SMD Kind of package: reel; tape On-state resistance: 2Ω Type of transistor: N-MOSFET Power dissipation: 0.52W Polarisation: unipolar Gate charge: 1.2nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 5A Drain-source voltage: 30V Drain current: 0.4A |
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| DMN31D5UDJ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 160mA; Idm: 0.6A; 350mW; SOT963 Mounting: SMD Kind of package: reel; tape On-state resistance: 4.5Ω Type of transistor: N-MOSFET Power dissipation: 0.35W Polarisation: unipolar Gate charge: 0.38nC Case: SOT963 Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 0.6A Drain-source voltage: 30V Drain current: 0.16A |
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| DMN31D5UFO-7B | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 0.32A; Idm: 0.7A; 0.38W Mounting: SMD Kind of package: reel; tape On-state resistance: 4.5Ω Type of transistor: N-MOSFET Power dissipation: 0.38W Polarisation: unipolar Gate charge: 0.38nC Case: X2-DFN0604-3 Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 0.7A Drain-source voltage: 30V Drain current: 0.32A |
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DMN31D6UT-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 350mA; Idm: 0.8A; 320mW; SOT523 Mounting: SMD Kind of package: reel; tape On-state resistance: 2Ω Type of transistor: N-MOSFET Power dissipation: 0.32W Polarisation: unipolar Gate charge: 0.35nC Case: SOT523 Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 0.8A Drain-source voltage: 30V Drain current: 0.35A |
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| AP22654WU-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch Type of integrated circuit: power switch |
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DDZ4V7ASF-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 4.7V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Mounting: SMD Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode Leakage current: 10µA |
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UDZ4V7B-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 4.7V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 4.7V Mounting: SMD Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
на замовлення 5200 шт: термін постачання 21-30 дні (днів) |
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| SMCJ170CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 170V Breakdown voltage: 189...209V Max. forward impulse current: 5.5A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| DMT34M1LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; 1.3W; PowerDI®5060-8 Mounting: SMD Type of transistor: N-MOSFET On-state resistance: 5.2mΩ Drain current: 80A Drain-source voltage: 30V Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Case: PowerDI®5060-8 Kind of channel: enhanced Gate-source voltage: ±20V |
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| FMMT411TA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.9A; 800mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.9A Power dissipation: 0.8W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
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| FMMT413TD | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 150V; 0.1A; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.1A Power dissipation: 0.5W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
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| FMMT416TD | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 0.5A Power dissipation: 0.5W Case: SOT23 Pulsed collector current: 60A Mounting: SMD Kind of package: reel; tape |
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| FMMT417TD | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 0.5A Power dissipation: 0.5W Case: SOT23 Pulsed collector current: 60A Mounting: SMD Kind of package: reel; tape |
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| AP3928S-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch Type of integrated circuit: power switch |
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MMSZ5251B-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.37/0.5W; 22V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37/0.5W Zener voltage: 22V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 8160 шт: термін постачання 21-30 дні (днів) |
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MMSZ5251BS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 22V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 22V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
на замовлення 244 шт: термін постачання 21-30 дні (днів) |
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ZXMN3B01FTA | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; Idm: 9.4A; 0.625W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.7A Pulsed drain current: 9.4A Power dissipation: 0.625W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.15Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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| D1213A-01LP-7B | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
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| D1213A-01LP4-7B | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
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| D1213A-01LPQ-7B | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
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| D1213A-01T-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
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| D1213A-01W-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
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| D1213A-02S-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
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| D1213A-02SM-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
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| D1213A-02SO-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
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| D1213A-02WL-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
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| D1213A-04MR-13 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
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| PDS835L-13 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 35V; 8A; PowerDI®5; reel,tape Case: PowerDI®5 Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 35V Max. forward voltage: 0.51V Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 120A Leakage current: 35mA |
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| PDS835L-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 35V; 8A; PowerDI®5; reel,tape Case: PowerDI®5 Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 35V Max. forward voltage: 0.51V Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 120A Leakage current: 35mA |
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| ZDT1049TA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 25V; 5A; 2.75W; SM8 Mounting: SMD Kind of package: reel; tape Case: SM8 Frequency: 180MHz Collector-emitter voltage: 25V Current gain: 300 Collector current: 5A Pulsed collector current: 20A Type of transistor: NPN Power dissipation: 2.75W Polarisation: bipolar |
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| AP7387-33FDC-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SMD; ±2% Manufacturer series: AP7387 Operating temperature: -40...85°C Number of channels: 1 Input voltage: 5...60V Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: U-DFN2020-6 Type C Tolerance: ±2% Output voltage: 3.3V Output current: 0.15A Voltage drop: 1.1V Type of integrated circuit: voltage regulator |
товар відсутній |
| SMBJ40A-13-F |
|
Виробник: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 44.4÷51.1V; 9.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 9.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 44.4÷51.1V; 9.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 9.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
| D26V0H1U2LP16-7 |
|
Виробник: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS
Type of diode: TVS
Category: Unidirectional SMD transil diodes
Description: Diode: TVS
Type of diode: TVS
товар відсутній
| D26V0H1U2LP20-7 |
|
Виробник: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS
Type of diode: TVS
Category: Unidirectional SMD transil diodes
Description: Diode: TVS
Type of diode: TVS
товар відсутній
| BAS40DW-04-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.2A; SOT363; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Max. forward voltage: 1V
Case: SOT363
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.2A; SOT363; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Max. forward voltage: 1V
Case: SOT363
Kind of package: reel; tape
Max. forward impulse current: 0.6A
на замовлення 1290 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.99 грн |
| 55+ | 6.83 грн |
| 100+ | 6.11 грн |
| 160+ | 5.25 грн |
| 435+ | 4.96 грн |
| BAS40DW-05-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.2A; 5ns; SOT363; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: common cathode; double x2
Capacitance: 5pF
Max. forward voltage: 1V
Case: SOT363
Kind of package: reel; tape
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.2A; 5ns; SOT363; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: common cathode; double x2
Capacitance: 5pF
Max. forward voltage: 1V
Case: SOT363
Kind of package: reel; tape
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
товар відсутній
| 74AUP1G09FW4-7 |
|
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1010-6; 0.8÷3.6VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: open drain
Family: AUP
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1010-6; 0.8÷3.6VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: open drain
Family: AUP
товар відсутній
| 74AUP1G09FW5-7 |
|
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X1-DFN1010-6; 0.8÷3.6VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X1-DFN1010-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: open drain
Family: AUP
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X1-DFN1010-6; 0.8÷3.6VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X1-DFN1010-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: open drain
Family: AUP
товар відсутній
| 74AUP1G09FX4-7 |
|
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1409-6; 0.8÷3.6VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: open drain
Family: AUP
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1409-6; 0.8÷3.6VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: open drain
Family: AUP
товар відсутній
| 74AUP1G09FZ4-7 |
|
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1410-6; 0.8÷3.6VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: open drain
Family: AUP
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1410-6; 0.8÷3.6VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: open drain
Family: AUP
товар відсутній
| 74AUP1G09SE-7 |
|
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT353; 0.8÷3.6VDC; AUP
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: open drain
Family: AUP
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT353; 0.8÷3.6VDC; AUP
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: open drain
Family: AUP
товар відсутній
| AL3069S16-13 |
|
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
товар відсутній
| SBR15U50SP5-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 15A; 50ns; PowerDI®5; Ufmax: 0.44V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Max. forward voltage: 0.44V
Case: PowerDI®5
Kind of package: reel; tape
Leakage current: 50mA
Max. forward impulse current: 256A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 15A; 50ns; PowerDI®5; Ufmax: 0.44V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Max. forward voltage: 0.44V
Case: PowerDI®5
Kind of package: reel; tape
Leakage current: 50mA
Max. forward impulse current: 256A
товар відсутній
| SBRT15U50SP5-13D |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; Trench SBR®; SMD; 50V; 15A; PowerDI®5
Type of diode: Schottky rectifying
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Case: PowerDI®5
Kind of package: reel; tape
Leakage current: 170µA
Max. forward impulse current: 290A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; Trench SBR®; SMD; 50V; 15A; PowerDI®5
Type of diode: Schottky rectifying
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Case: PowerDI®5
Kind of package: reel; tape
Leakage current: 170µA
Max. forward impulse current: 290A
товар відсутній
| SBRT15U50SP5-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; Trench SBR®; SMD; 50V; 15A; PowerDI®5
Type of diode: Schottky rectifying
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Case: PowerDI®5
Kind of package: reel; tape
Leakage current: 170µA
Max. forward impulse current: 290A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; Trench SBR®; SMD; 50V; 15A; PowerDI®5
Type of diode: Schottky rectifying
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Case: PowerDI®5
Kind of package: reel; tape
Leakage current: 170µA
Max. forward impulse current: 290A
товар відсутній
| KBJ606G |
|
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 170A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 170A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Features of semiconductor devices: glass passivated
Kind of package: tube
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 170A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 170A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Features of semiconductor devices: glass passivated
Kind of package: tube
товар відсутній
| MMSZ5257B-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 33V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 33V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
товар відсутній
| MMSZ5257BS-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 33V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 33V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
на замовлення 240 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 180+ | 2.17 грн |
| 240+ | 1.44 грн |
| DMT35M4LFVW-7 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 110A; 1.5W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.5W
Polarisation: unipolar
Gate charge: 16.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 110A
Case: PowerDI®3333-8
Drain-source voltage: 30V
Drain current: 13A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 110A; 1.5W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.5W
Polarisation: unipolar
Gate charge: 16.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 110A
Case: PowerDI®3333-8
Drain-source voltage: 30V
Drain current: 13A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
товар відсутній
| DMP6023LEQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -50A; 1.3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -50A; 1.3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FMMT415TD |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Kind of package: reel; tape
товар відсутній
| SMCJ33CA-13-F |
|
Виробник: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1358 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 18.04 грн |
| 25+ | 15.02 грн |
| 71+ | 11.86 грн |
| 195+ | 11.21 грн |
| DRTR5V0U1LP-7B |
|
Виробник: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
товар відсутній
| DRTR5V0U1LPQ-7B |
|
Виробник: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
товар відсутній
| DRTR5V0U4LP16-7 |
|
Виробник: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
товар відсутній
| DMN3135LVT-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 25A; 0.84W; TSOT26
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.84W
Polarisation: unipolar
Case: TSOT26
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25A
Drain-source voltage: 30V
Drain current: 2.7A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 25A; 0.84W; TSOT26
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.84W
Polarisation: unipolar
Case: TSOT26
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25A
Drain-source voltage: 30V
Drain current: 2.7A
товар відсутній
| DMN3135LVTQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; Idm: 25A; 1.27W; TSOT26
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.27W
Polarisation: unipolar
Gate charge: 9nC
Case: TSOT26
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25A
Drain-source voltage: 30V
Drain current: 3.3A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; Idm: 25A; 1.27W; TSOT26
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.27W
Polarisation: unipolar
Gate charge: 9nC
Case: TSOT26
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25A
Drain-source voltage: 30V
Drain current: 3.3A
товар відсутній
| DMN313DLT-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 1.2A; 520mW; SOT523
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 3.2Ω
Type of transistor: N-MOSFET
Power dissipation: 0.52W
Polarisation: unipolar
Gate charge: 0.5nC
Case: SOT523
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Drain-source voltage: 30V
Drain current: 0.3A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 1.2A; 520mW; SOT523
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 3.2Ω
Type of transistor: N-MOSFET
Power dissipation: 0.52W
Polarisation: unipolar
Gate charge: 0.5nC
Case: SOT523
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Drain-source voltage: 30V
Drain current: 0.3A
товар відсутній
| DMN3150L-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 15A; 1.4W; SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 15A
Drain-source voltage: 30V
Drain current: 3.1A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 15A; 1.4W; SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 15A
Drain-source voltage: 30V
Drain current: 3.1A
на замовлення 1815 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.22 грн |
| 55+ | 6.9 грн |
| 100+ | 6.11 грн |
| 165+ | 5.25 грн |
| 445+ | 4.96 грн |
| DMN3190LDW-7 |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.9A; Idm: 9.6A; 0.32W
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.32W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Case: SOT363
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 9.6A
Drain-source voltage: 30V
Drain current: 0.9A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.9A; Idm: 9.6A; 0.32W
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.32W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Case: SOT363
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 9.6A
Drain-source voltage: 30V
Drain current: 0.9A
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 11.3 грн |
| 65+ | 5.68 грн |
| 100+ | 5.03 грн |
| 190+ | 4.53 грн |
| 520+ | 4.24 грн |
| DMN31D5L-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 400mA; Idm: 5A; 520mW; SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 2Ω
Type of transistor: N-MOSFET
Power dissipation: 0.52W
Polarisation: unipolar
Gate charge: 1.2nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 5A
Drain-source voltage: 30V
Drain current: 0.4A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 400mA; Idm: 5A; 520mW; SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 2Ω
Type of transistor: N-MOSFET
Power dissipation: 0.52W
Polarisation: unipolar
Gate charge: 1.2nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 5A
Drain-source voltage: 30V
Drain current: 0.4A
товар відсутній
| DMN31D5UDJ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160mA; Idm: 0.6A; 350mW; SOT963
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 0.38nC
Case: SOT963
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 0.6A
Drain-source voltage: 30V
Drain current: 0.16A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160mA; Idm: 0.6A; 350mW; SOT963
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 0.38nC
Case: SOT963
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 0.6A
Drain-source voltage: 30V
Drain current: 0.16A
товар відсутній
| DMN31D5UFO-7B |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.32A; Idm: 0.7A; 0.38W
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.38W
Polarisation: unipolar
Gate charge: 0.38nC
Case: X2-DFN0604-3
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 0.7A
Drain-source voltage: 30V
Drain current: 0.32A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.32A; Idm: 0.7A; 0.38W
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.38W
Polarisation: unipolar
Gate charge: 0.38nC
Case: X2-DFN0604-3
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 0.7A
Drain-source voltage: 30V
Drain current: 0.32A
товар відсутній
| DMN31D6UT-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 350mA; Idm: 0.8A; 320mW; SOT523
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 2Ω
Type of transistor: N-MOSFET
Power dissipation: 0.32W
Polarisation: unipolar
Gate charge: 0.35nC
Case: SOT523
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 0.8A
Drain-source voltage: 30V
Drain current: 0.35A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 350mA; Idm: 0.8A; 320mW; SOT523
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 2Ω
Type of transistor: N-MOSFET
Power dissipation: 0.32W
Polarisation: unipolar
Gate charge: 0.35nC
Case: SOT523
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 0.8A
Drain-source voltage: 30V
Drain current: 0.35A
товар відсутній
| AP22654WU-7 |
|
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
товар відсутній
| DDZ4V7ASF-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 10µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 10µA
товар відсутній
| UDZ4V7B-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
на замовлення 5200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 6.43 грн |
| 150+ | 2.51 грн |
| 440+ | 1.92 грн |
| 1190+ | 1.81 грн |
| SMCJ170CA-13-F |
|
Виробник: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
| DMT34M1LPS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; 1.3W; PowerDI®5060-8
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 5.2mΩ
Drain current: 80A
Drain-source voltage: 30V
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerDI®5060-8
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; 1.3W; PowerDI®5060-8
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 5.2mΩ
Drain current: 80A
Drain-source voltage: 30V
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerDI®5060-8
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| FMMT411TA |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.9A; 800mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.9A
Power dissipation: 0.8W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.9A; 800mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.9A
Power dissipation: 0.8W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
товар відсутній
| FMMT413TD |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 0.1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 0.1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
товар відсутній
| FMMT416TD |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Kind of package: reel; tape
товар відсутній
| FMMT417TD |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Kind of package: reel; tape
товар відсутній
| AP3928S-13 |
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
товар відсутній
| MMSZ5251B-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 22V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 22V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 8160 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 160+ | 2.67 грн |
| 240+ | 1.55 грн |
| 500+ | 1.37 грн |
| 680+ | 1.24 грн |
| 1840+ | 1.17 грн |
| MMSZ5251BS-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 22V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 22V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
на замовлення 244 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 120+ | 3.29 грн |
| 180+ | 2.06 грн |
| ZXMN3B01FTA |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; Idm: 9.4A; 0.625W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Pulsed drain current: 9.4A
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; Idm: 9.4A; 0.625W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Pulsed drain current: 9.4A
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| D1213A-01LP-7B |
|
Виробник: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
товар відсутній
| D1213A-01LP4-7B |
|
Виробник: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
товар відсутній
| D1213A-01LPQ-7B |
|
Виробник: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
товар відсутній
| D1213A-01T-7 |
|
Виробник: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
товар відсутній
| D1213A-01W-7 |
|
Виробник: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
товар відсутній
| D1213A-02S-7 |
|
Виробник: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
товар відсутній
| D1213A-02SM-7 |
|
Виробник: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
товар відсутній
| D1213A-02SO-7 |
|
Виробник: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
товар відсутній
| D1213A-02WL-7 |
|
Виробник: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
товар відсутній
| D1213A-04MR-13 |
|
Виробник: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
товар відсутній
| PDS835L-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 35V; 8A; PowerDI®5; reel,tape
Case: PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 35V
Max. forward voltage: 0.51V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Leakage current: 35mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 35V; 8A; PowerDI®5; reel,tape
Case: PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 35V
Max. forward voltage: 0.51V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Leakage current: 35mA
товар відсутній
| PDS835L-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 35V; 8A; PowerDI®5; reel,tape
Case: PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 35V
Max. forward voltage: 0.51V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Leakage current: 35mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 35V; 8A; PowerDI®5; reel,tape
Case: PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 35V
Max. forward voltage: 0.51V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Leakage current: 35mA
товар відсутній
| ZDT1049TA |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 5A; 2.75W; SM8
Mounting: SMD
Kind of package: reel; tape
Case: SM8
Frequency: 180MHz
Collector-emitter voltage: 25V
Current gain: 300
Collector current: 5A
Pulsed collector current: 20A
Type of transistor: NPN
Power dissipation: 2.75W
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 5A; 2.75W; SM8
Mounting: SMD
Kind of package: reel; tape
Case: SM8
Frequency: 180MHz
Collector-emitter voltage: 25V
Current gain: 300
Collector current: 5A
Pulsed collector current: 20A
Type of transistor: NPN
Power dissipation: 2.75W
Polarisation: bipolar
товар відсутній
| AP7387-33FDC-7 |
|
Виробник: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SMD; ±2%
Manufacturer series: AP7387
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 5...60V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: U-DFN2020-6 Type C
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.15A
Voltage drop: 1.1V
Type of integrated circuit: voltage regulator
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SMD; ±2%
Manufacturer series: AP7387
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 5...60V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: U-DFN2020-6 Type C
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.15A
Voltage drop: 1.1V
Type of integrated circuit: voltage regulator
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