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DMP4025LSDQ-13 DMP4025LSDQ-13 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.1A; Idm: -28A; 2.14W; SO8
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SO8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -28A
Drain current: -6.1A
Drain-source voltage: -40V
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 2.14W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4025LSS-13 DMP4025LSS-13 DIODES INCORPORATED DMP4025LSS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SO8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -30A
Drain current: -6.9A
Drain-source voltage: -40V
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 2.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4025LSSQ-13 DMP4025LSSQ-13 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SO8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -30A
Drain current: -6.9A
Drain-source voltage: -40V
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 2.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4025SFG-13 DIODES INCORPORATED DMP4025SFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.77A; Idm: -80A; 1.95W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -5.77A
Drain-source voltage: -40V
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 1.95W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4025SFG-7 DIODES INCORPORATED DMP4025SFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.77A; Idm: -80A; 1.95W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -5.77A
Drain-source voltage: -40V
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 1.95W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
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DMP25H18DLFDE-13 DIODES INCORPORATED DMP25H18DLFDE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -210mA; Idm: -1A; 1.4W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: U-DFN2020-6
Polarisation: unipolar
Drain-source voltage: -250V
Pulsed drain current: -1A
Drain current: -210mA
Gate charge: 2.8nC
Power dissipation: 1.4W
On-state resistance: 18Ω
Gate-source voltage: ±40V
Kind of package: 13 inch reel; tape
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DMP25H18DLFDE-7 DIODES INCORPORATED DMP25H18DLFDE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -210mA; Idm: -1A; 1.4W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: U-DFN2020-6
Polarisation: unipolar
Drain-source voltage: -250V
Pulsed drain current: -1A
Drain current: -210mA
Gate charge: 2.8nC
Power dissipation: 1.4W
On-state resistance: 18Ω
Gate-source voltage: ±40V
Kind of package: 7 inch reel; tape
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ZVN4206GVTA DIODES INCORPORATED ZVN4206GV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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DMN3071LFR4-7 DIODES INCORPORATED DMN3071LFR4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 15A; 1.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 1.1W
Case: X2-DFN1010-3
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 4.5nC
On-state resistance: 75mΩ
Pulsed drain current: 15A
Gate-source voltage: ±20V
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DMTH4005SPS-13 DIODES INCORPORATED DMTH4005SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 320A; 150W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI5060-8
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 49.1nC
On-state resistance: 3.7mΩ
Power dissipation: 150W
Drain current: 100A
Drain-source voltage: 40V
Pulsed drain current: 320A
Kind of package: 13 inch reel; tape
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DMNH4005SPSQ-13 DIODES INCORPORATED DMNH4005SPSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 150A; 2.8W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI5060-8
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 48nC
On-state resistance: 4mΩ
Power dissipation: 2.8W
Drain current: 100A
Drain-source voltage: 40V
Pulsed drain current: 150A
Kind of package: 13 inch reel; tape
Application: automotive industry
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DMG1012T-13 DMG1012T-13 DIODES INCORPORATED DMG1012TQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 450mA; Idm: 3A; 280mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.45A
Power dissipation: 0.28W
Case: SOT523
Gate-source voltage: ±6V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 736.6pC
Pulsed drain current: 3A
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SMCJ18CAQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 51.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 51.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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SMCJ18CA-13-F SMCJ18CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 51.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 51.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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ZUMTS17NTA DIODES INCORPORATED ZUMTS17N.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 11V; 0.05A; 350mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 11V
Collector current: 50mA
Power dissipation: 0.35W
Case: SOT323
Current gain: 56...180
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 1.4...3.2GHz
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AS358MMTR-G1 DIODES INCORPORATED AS358-358A-358B.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; MSOP8; 3÷36VDC; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 2
Case: MSOP8
Operating temperature: -40...85°C
Input offset voltage: 7mV
Voltage supply range: 3...36V DC
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 100nA
Integrated circuit features: low power
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S1MB-13-F S1MB-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE798DC09889D44E748&compId=s1ab-s1mb.pdf?ci_sign=f029a672dbe79fbc6bb646f22fd621c71fa9433e Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; SMB; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Capacitance: 10pF
Case: SMB
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 3007 шт:
термін постачання 21-30 дні (днів)
36+12.05 грн
46+8.79 грн
57+7.07 грн
100+6.35 грн
500+4.87 грн
1000+4.29 грн
1500+3.99 грн
3000+3.49 грн
Мінімальне замовлення: 36
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RS1MSWFM-7 DIODES INCORPORATED RS1MSWFM.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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BZT52C6V2LP-7 BZT52C6V2LP-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED4F78D984B0A18&compId=BZT52CxxLP_ser.pdf?ci_sign=e704d5896732ab8b8ab3bad7971ecd9b6f855194 Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 6.2V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
на замовлення 1970 шт:
термін постачання 21-30 дні (днів)
27+16.35 грн
33+12.31 грн
38+10.63 грн
49+8.23 грн
100+5.51 грн
500+5.44 грн
Мінімальне замовлення: 27
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BZX84B47-7-F DIODES INCORPORATED Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 47V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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US1MDF-13 DIODES INCORPORATED US1JDF.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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FUS1ME DIODES INCORPORATED FUS1ME.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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FES1JE DIODES INCORPORATED FES1JE.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Max. forward voltage: 1.3V
Max. load current: 1A
Max. forward impulse current: 30A
Application: automotive industry
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BZT52C12T-7 BZT52C12T-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED501D88D5DAA18&compId=BZT52CxxT_ser.pdf?ci_sign=9b1d5fda49b682032f84d8fd71549d6b9146d78b Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
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BZT52C12TQ-7-F DIODES INCORPORATED ds30502.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
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DMN2230U-7 DMN2230U-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C9090ED1CDD8BF&compId=DMN2230U.pdf?ci_sign=925c8ebe97ee64d169ed4cefa8663301a8dcaecc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 0.23Ω
Power dissipation: 0.6W
Drain current: 2A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
на замовлення 790 шт:
термін постачання 21-30 дні (днів)
35+12.39 грн
45+9.27 грн
100+8.23 грн
500+7.75 грн
Мінімальне замовлення: 35
В кошику  од. на суму  грн.
DMN2230UQ-7 DMN2230UQ-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C9103799AD78BF&compId=DMN2230UQ.pdf?ci_sign=3e06f057d16521d57eebbb63003e460e2d9558d7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 0.11Ω
Power dissipation: 0.6W
Drain current: 2A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
на замовлення 251 шт:
термін постачання 21-30 дні (днів)
13+34.43 грн
18+23.26 грн
50+16.23 грн
100+13.83 грн
Мінімальне замовлення: 13
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PDU620-13 DIODES INCORPORATED ds30760.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 6A; 25ns; Ufmax: 940mV; Ifsm: 150A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 6A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Max. forward voltage: 0.94V
Max. load current: 6A
Max. forward impulse current: 150A
Leakage current: 5µA
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
5000+33.14 грн
Мінімальне замовлення: 5000
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SBR130S3-7 SBR130S3-7 DIODES INCORPORATED SBR130S3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SBR®; SMD; 30V; 1A; reel,tape
Case: SOD323
Mounting: SMD
Type of diode: Schottky rectifying
Technology: SBR®
Max. forward voltage: 0.46V
Load current: 1A
Max. forward impulse current: 20A
Max. off-state voltage: 30V
Kind of package: reel; tape
Semiconductor structure: single diode
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PI49FCT3807AHE PI49FCT3807AHE DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE985AE82B9D99618BF&compId=PI49FCT3807.pdf?ci_sign=5bfeec81c4cd74891d41876837e86198bce53c3e Category: Other logic integrated circuits
Description: IC: peripheral circuit; clock buffer,fanout buffer; Ch: 1; 3.3VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: clock buffer; fanout buffer
Case: SSOP20
Mounting: SMD
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs/outputs: 1/10
Number of channels: 1
Frequency: 66MHz
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PI49FCT32805QE DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE985992D71686D38BF&compId=PI49FCT32805.pdf?ci_sign=64009f9b603f7a087a0765e1735d2b2069ce1e47 Category: Other logic integrated circuits
Description: IC: peripheral circuit; clock buffer,fanout buffer; Ch: 2; 3.3VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: clock buffer; fanout buffer
Case: QSOP20
Mounting: SMD
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs/outputs: 1/5
Number of channels: 2
Frequency: 133MHz
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DMN2100UDM-7 DMN2100UDM-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C8FF76A99698BF&compId=DMN2100UDM.pdf?ci_sign=368d5582ce496e5058939302b77bde712485617a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.6W; SOT26; ESD
Version: ESD
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT26
Polarisation: unipolar
On-state resistance: 0.13Ω
Power dissipation: 0.6W
Drain current: 2.5A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN21D2UFB-7 DIODES INCORPORATED DMN21D2UFB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Type of transistor: N-MOSFET
Mounting: SMD
Case: X1-DFN1006-3
Polarisation: unipolar
Gate charge: 930pC
On-state resistance: 3Ω
Power dissipation: 570mW
Drain current: 0.7A
Pulsed drain current: 1A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN21D2UFB-7B DIODES INCORPORATED DMN21D2UFB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Type of transistor: N-MOSFET
Mounting: SMD
Case: X1-DFN1006-3
Polarisation: unipolar
Gate charge: 930pC
On-state resistance: 3Ω
Power dissipation: 570mW
Drain current: 0.7A
Pulsed drain current: 1A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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AP3402KTTR-G1 AP3402KTTR-G1 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7AB74CD0EF37E28&compId=AP3402x-DTE.pdf?ci_sign=b710eb177eeddfb81cd66595efd126cb8815babd Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 2A; SMD
Mounting: SMD
Case: TSOT26
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 2A
Output voltage: 0.6...5.5V DC
Input voltage: 2.7...5.5V DC
Efficiency: 95%
Frequency: 1MHz
Topology: buck
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
на замовлення 610 шт:
термін постачання 21-30 дні (днів)
23+18.94 грн
28+14.55 грн
32+12.79 грн
37+11.03 грн
100+9.35 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
SDT40H100CT SDT40H100CT DIODES INCORPORATED SDT40H100CT-SDT40H100CTFP.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.7V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.7V
Max. forward impulse current: 280A
Kind of package: tube
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SMCJ120CA-13-F SMCJ120CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 133÷147V; 7.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 7.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ36A-13-F SMAJ36A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 4385 шт:
термін постачання 21-30 дні (днів)
28+15.49 грн
34+11.99 грн
39+10.47 грн
48+8.41 грн
100+5.98 грн
500+4.35 грн
1000+4.10 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
P4SMAJ36ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMAJ36AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
5000+8.01 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
AP3401KTTR-G1 AP3401KTTR-G1 DIODES INCORPORATED AP3401x-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Case: TSOT26
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Operating temperature: -40...85°C
Output voltage: 0.6...5.5V DC
Output current: 1A
Input voltage: 2.5...5.5V DC
Efficiency: 95%
Frequency: 1.5MHz
Topology: buck
на замовлення 2810 шт:
термін постачання 21-30 дні (днів)
20+22.38 грн
25+16.31 грн
28+14.39 грн
33+12.23 грн
100+11.43 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
AP3401DNTR-G1 AP3401DNTR-G1 DIODES INCORPORATED AP3401x-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; DFN6
Case: DFN6
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Operating temperature: -40...85°C
Output voltage: 0.6...5.5V DC
Output current: 1A
Input voltage: 2.5...5.5V DC
Efficiency: 95%
Frequency: 1.5MHz
Topology: buck
на замовлення 2992 шт:
термін постачання 21-30 дні (днів)
10+43.04 грн
17+23.90 грн
25+19.82 грн
100+14.79 грн
250+12.15 грн
500+10.47 грн
1000+9.99 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
DMN3401LDW-7 DMN3401LDW-7 DIODES INCORPORATED DMN3401LDW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 4A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN3401LDW-13 DMN3401LDW-13 DIODES INCORPORATED DMN3401LDW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 4A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMC3401LDW-7 DIODES INCORPORATED DMC3401LDW.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; 30V; 550mA; 400mW; SOT363; double
Type of transistor: N/P-MOSFET
Technology: MOSFET
Drain-source voltage: 30V
Drain current: 0.55A
Power dissipation: 0.4W
Case: SOT363
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Semiconductor structure: double
Operating temperature: -55...150°C
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)
3000+2.63 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SBR1045CTLQ-13 DIODES INCORPORATED SBR1045CTLQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
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DXT5551-13 DIODES INCORPORATED DXT5551.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 1.2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Current gain: 30...250
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
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KBP10G DIODES INCORPORATED ds21203.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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PDR5G-13 DIODES INCORPORATED ds30552.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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PDR5G-13 DIODES INCORPORATED ds30552.pdf Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
5000+20.83 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
DMN6075S-7 DMN6075S-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED91CA9E2B78A18&compId=DMN6075S.pdf?ci_sign=058d33862ba6a5f1907e833950d4837ba7d3b69c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; 0.5W; SOT23
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
On-state resistance: 0.12Ω
Power dissipation: 0.5W
Drain current: 1.5A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: 7 inch reel; tape
на замовлення 3292 шт:
термін постачання 21-30 дні (днів)
28+15.49 грн
37+11.03 грн
43+9.43 грн
63+6.39 грн
100+5.51 грн
500+4.96 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
BC858CW-7-F BC858CW-7-F DIODES INCORPORATED BC856AW-BC858CW.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 100mA; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
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APX803L20-47SA-7 DIODES INCORPORATED APX803L.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 0.9...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 1µA
Maximum output current: 20mA
Threshold on-voltage: 4.7V
Kind of package: reel; tape
Number of channels: 1
Delay time: 220ms
Integrated circuit features: ±1,5% accuracy
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ZXTN19060CFFTA DIODES INCORPORATED ZXTN19060CFF.pdf Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)
3000+25.56 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
S5MC-13-F S5MC-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B983543627B4C143&compId=S5AC_ser.pdf?ci_sign=78a844e5c7496fd8adffaaf94ae8d3c0f76d60d5 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 5A; SMC; Ufmax: 1.15V; Ifsm: 100A
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Capacitance: 40pF
Max. forward voltage: 1.15V
Load current: 5A
Max. forward impulse current: 100A
Max. off-state voltage: 1kV
на замовлення 2663 шт:
термін постачання 21-30 дні (днів)
15+29.27 грн
19+21.42 грн
21+19.90 грн
100+15.43 грн
500+12.47 грн
1000+11.99 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
S8MC-13
+1
 		S8MC-13 DIODES INCORPORATED ds31117.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 8A; SMC; Ufmax: 0.985V; Ifsm: 200A
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Capacitance: 45pF
Max. forward voltage: 0.985V
Load current: 8A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
на замовлення 2688 шт:
термін постачання 21-30 дні (днів)
14+30.99 грн
18+22.94 грн
50+19.74 грн
75+18.94 грн
100+18.38 грн
150+17.66 грн
250+16.70 грн
500+15.51 грн
1000+14.31 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
2DC2412R-7 DIODES INCORPORATED 2DC2412R.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 350mW; SOT23
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Collector current: 0.15A
Power dissipation: 0.35W
Collector-emitter voltage: 50V
Current gain: 180...390
Quantity in set/package: 3000pcs.
Polarisation: bipolar
Frequency: 80...180MHz
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df06m df06m DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB90B41EDBA1FF160CC11940C7&compId=DF005_10M.pdf?ci_sign=2f24257723bce9869f6db8061fe3b748fd7f107c Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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AP7366-33W5-7 AP7366-33W5-7 DIODES INCORPORATED AP7366.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 3.3V
Output current: 0.6A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7366
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.2...6V
Integrated circuit features: shutdown mode control input
на замовлення 619 шт:
термін постачання 21-30 дні (днів)
32+13.77 грн
40+10.23 грн
44+9.11 грн
52+7.83 грн
100+6.31 грн
250+6.23 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
DMN3016LSS-13 DMN3016LSS-13 DIODES INCORPORATED DMN3016LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.5A; Idm: 80A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.5A
Pulsed drain current: 80A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 25.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 1300 шт:
термін постачання 21-30 дні (днів)
11+40.46 грн
15+28.45 грн
100+18.62 грн
250+15.75 грн
500+13.99 грн
1000+12.63 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
DMP4025LSDQ-13
DMP4025LSDQ-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.1A; Idm: -28A; 2.14W; SO8
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SO8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -28A
Drain current: -6.1A
Drain-source voltage: -40V
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 2.14W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4025LSS-13 DMP4025LSS.pdf
DMP4025LSS-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SO8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -30A
Drain current: -6.9A
Drain-source voltage: -40V
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 2.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4025LSSQ-13
DMP4025LSSQ-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SO8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -30A
Drain current: -6.9A
Drain-source voltage: -40V
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 2.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4025SFG-13 DMP4025SFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.77A; Idm: -80A; 1.95W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -5.77A
Drain-source voltage: -40V
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 1.95W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4025SFG-7 DMP4025SFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.77A; Idm: -80A; 1.95W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -5.77A
Drain-source voltage: -40V
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 1.95W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
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DMP25H18DLFDE-13 DMP25H18DLFDE.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -210mA; Idm: -1A; 1.4W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: U-DFN2020-6
Polarisation: unipolar
Drain-source voltage: -250V
Pulsed drain current: -1A
Drain current: -210mA
Gate charge: 2.8nC
Power dissipation: 1.4W
On-state resistance: 18Ω
Gate-source voltage: ±40V
Kind of package: 13 inch reel; tape
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DMP25H18DLFDE-7 DMP25H18DLFDE.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -210mA; Idm: -1A; 1.4W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: U-DFN2020-6
Polarisation: unipolar
Drain-source voltage: -250V
Pulsed drain current: -1A
Drain current: -210mA
Gate charge: 2.8nC
Power dissipation: 1.4W
On-state resistance: 18Ω
Gate-source voltage: ±40V
Kind of package: 7 inch reel; tape
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ZVN4206GVTA ZVN4206GV.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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DMN3071LFR4-7 DMN3071LFR4.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 15A; 1.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 1.1W
Case: X2-DFN1010-3
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 4.5nC
On-state resistance: 75mΩ
Pulsed drain current: 15A
Gate-source voltage: ±20V
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DMTH4005SPS-13 DMTH4005SPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 320A; 150W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI5060-8
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 49.1nC
On-state resistance: 3.7mΩ
Power dissipation: 150W
Drain current: 100A
Drain-source voltage: 40V
Pulsed drain current: 320A
Kind of package: 13 inch reel; tape
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DMNH4005SPSQ-13 DMNH4005SPSQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 150A; 2.8W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI5060-8
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 48nC
On-state resistance: 4mΩ
Power dissipation: 2.8W
Drain current: 100A
Drain-source voltage: 40V
Pulsed drain current: 150A
Kind of package: 13 inch reel; tape
Application: automotive industry
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DMG1012T-13 DMG1012TQ.pdf
DMG1012T-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 450mA; Idm: 3A; 280mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.45A
Power dissipation: 0.28W
Case: SOT523
Gate-source voltage: ±6V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 736.6pC
Pulsed drain current: 3A
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SMCJ18CAQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 51.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 51.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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SMCJ18CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ18CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 51.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 51.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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ZUMTS17NTA ZUMTS17N.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 11V; 0.05A; 350mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 11V
Collector current: 50mA
Power dissipation: 0.35W
Case: SOT323
Current gain: 56...180
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 1.4...3.2GHz
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AS358MMTR-G1 AS358-358A-358B.pdf
Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; MSOP8; 3÷36VDC; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 2
Case: MSOP8
Operating temperature: -40...85°C
Input offset voltage: 7mV
Voltage supply range: 3...36V DC
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 100nA
Integrated circuit features: low power
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S1MB-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE798DC09889D44E748&compId=s1ab-s1mb.pdf?ci_sign=f029a672dbe79fbc6bb646f22fd621c71fa9433e
S1MB-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; SMB; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Capacitance: 10pF
Case: SMB
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 3007 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+12.05 грн
46+8.79 грн
57+7.07 грн
100+6.35 грн
500+4.87 грн
1000+4.29 грн
1500+3.99 грн
3000+3.49 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
RS1MSWFM-7 RS1MSWFM.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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В кошику  од. на суму  грн.
BZT52C6V2LP-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED4F78D984B0A18&compId=BZT52CxxLP_ser.pdf?ci_sign=e704d5896732ab8b8ab3bad7971ecd9b6f855194
BZT52C6V2LP-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 6.2V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
на замовлення 1970 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
27+16.35 грн
33+12.31 грн
38+10.63 грн
49+8.23 грн
100+5.51 грн
500+5.44 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
BZX84B47-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 47V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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US1MDF-13 US1JDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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FUS1ME FUS1ME.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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FES1JE FES1JE.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Max. forward voltage: 1.3V
Max. load current: 1A
Max. forward impulse current: 30A
Application: automotive industry
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BZT52C12T-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED501D88D5DAA18&compId=BZT52CxxT_ser.pdf?ci_sign=9b1d5fda49b682032f84d8fd71549d6b9146d78b
BZT52C12T-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
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BZT52C12TQ-7-F ds30502.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
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DMN2230U-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C9090ED1CDD8BF&compId=DMN2230U.pdf?ci_sign=925c8ebe97ee64d169ed4cefa8663301a8dcaecc
DMN2230U-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 0.23Ω
Power dissipation: 0.6W
Drain current: 2A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
на замовлення 790 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
35+12.39 грн
45+9.27 грн
100+8.23 грн
500+7.75 грн
Мінімальне замовлення: 35
В кошику  од. на суму  грн.
DMN2230UQ-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C9103799AD78BF&compId=DMN2230UQ.pdf?ci_sign=3e06f057d16521d57eebbb63003e460e2d9558d7
DMN2230UQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 0.11Ω
Power dissipation: 0.6W
Drain current: 2A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
на замовлення 251 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+34.43 грн
18+23.26 грн
50+16.23 грн
100+13.83 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
PDU620-13 ds30760.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 6A; 25ns; Ufmax: 940mV; Ifsm: 150A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 6A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Max. forward voltage: 0.94V
Max. load current: 6A
Max. forward impulse current: 150A
Leakage current: 5µA
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5000+33.14 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
SBR130S3-7 SBR130S3.pdf
SBR130S3-7
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SBR®; SMD; 30V; 1A; reel,tape
Case: SOD323
Mounting: SMD
Type of diode: Schottky rectifying
Technology: SBR®
Max. forward voltage: 0.46V
Load current: 1A
Max. forward impulse current: 20A
Max. off-state voltage: 30V
Kind of package: reel; tape
Semiconductor structure: single diode
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PI49FCT3807AHE pVersion=0046&contRep=ZT&docId=005056AB82531EE985AE82B9D99618BF&compId=PI49FCT3807.pdf?ci_sign=5bfeec81c4cd74891d41876837e86198bce53c3e
PI49FCT3807AHE
Виробник: DIODES INCORPORATED
Category: Other logic integrated circuits
Description: IC: peripheral circuit; clock buffer,fanout buffer; Ch: 1; 3.3VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: clock buffer; fanout buffer
Case: SSOP20
Mounting: SMD
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs/outputs: 1/10
Number of channels: 1
Frequency: 66MHz
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PI49FCT32805QE pVersion=0046&contRep=ZT&docId=005056AB82531EE985992D71686D38BF&compId=PI49FCT32805.pdf?ci_sign=64009f9b603f7a087a0765e1735d2b2069ce1e47
Виробник: DIODES INCORPORATED
Category: Other logic integrated circuits
Description: IC: peripheral circuit; clock buffer,fanout buffer; Ch: 2; 3.3VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: clock buffer; fanout buffer
Case: QSOP20
Mounting: SMD
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs/outputs: 1/5
Number of channels: 2
Frequency: 133MHz
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DMN2100UDM-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C8FF76A99698BF&compId=DMN2100UDM.pdf?ci_sign=368d5582ce496e5058939302b77bde712485617a
DMN2100UDM-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.6W; SOT26; ESD
Version: ESD
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT26
Polarisation: unipolar
On-state resistance: 0.13Ω
Power dissipation: 0.6W
Drain current: 2.5A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN21D2UFB-7 DMN21D2UFB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Type of transistor: N-MOSFET
Mounting: SMD
Case: X1-DFN1006-3
Polarisation: unipolar
Gate charge: 930pC
On-state resistance: 3Ω
Power dissipation: 570mW
Drain current: 0.7A
Pulsed drain current: 1A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN21D2UFB-7B DMN21D2UFB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Type of transistor: N-MOSFET
Mounting: SMD
Case: X1-DFN1006-3
Polarisation: unipolar
Gate charge: 930pC
On-state resistance: 3Ω
Power dissipation: 570mW
Drain current: 0.7A
Pulsed drain current: 1A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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AP3402KTTR-G1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7AB74CD0EF37E28&compId=AP3402x-DTE.pdf?ci_sign=b710eb177eeddfb81cd66595efd126cb8815babd
AP3402KTTR-G1
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 2A; SMD
Mounting: SMD
Case: TSOT26
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 2A
Output voltage: 0.6...5.5V DC
Input voltage: 2.7...5.5V DC
Efficiency: 95%
Frequency: 1MHz
Topology: buck
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
на замовлення 610 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
23+18.94 грн
28+14.55 грн
32+12.79 грн
37+11.03 грн
100+9.35 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
SDT40H100CT SDT40H100CT-SDT40H100CTFP.pdf
SDT40H100CT
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.7V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.7V
Max. forward impulse current: 280A
Kind of package: tube
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SMCJ120CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ120CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 133÷147V; 7.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 7.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ36A-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ36A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 4385 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+15.49 грн
34+11.99 грн
39+10.47 грн
48+8.41 грн
100+5.98 грн
500+4.35 грн
1000+4.10 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
P4SMAJ36ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMAJ36AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5000+8.01 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
AP3401KTTR-G1 AP3401x-DTE.pdf
AP3401KTTR-G1
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Case: TSOT26
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Operating temperature: -40...85°C
Output voltage: 0.6...5.5V DC
Output current: 1A
Input voltage: 2.5...5.5V DC
Efficiency: 95%
Frequency: 1.5MHz
Topology: buck
на замовлення 2810 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+22.38 грн
25+16.31 грн
28+14.39 грн
33+12.23 грн
100+11.43 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
AP3401DNTR-G1 AP3401x-DTE.pdf
AP3401DNTR-G1
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; DFN6
Case: DFN6
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Operating temperature: -40...85°C
Output voltage: 0.6...5.5V DC
Output current: 1A
Input voltage: 2.5...5.5V DC
Efficiency: 95%
Frequency: 1.5MHz
Topology: buck
на замовлення 2992 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+43.04 грн
17+23.90 грн
25+19.82 грн
100+14.79 грн
250+12.15 грн
500+10.47 грн
1000+9.99 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
DMN3401LDW-7 DMN3401LDW.pdf
DMN3401LDW-7
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 4A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN3401LDW-13 DMN3401LDW.pdf
DMN3401LDW-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 4A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMC3401LDW-7 DMC3401LDW.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; 30V; 550mA; 400mW; SOT363; double
Type of transistor: N/P-MOSFET
Technology: MOSFET
Drain-source voltage: 30V
Drain current: 0.55A
Power dissipation: 0.4W
Case: SOT363
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Semiconductor structure: double
Operating temperature: -55...150°C
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+2.63 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SBR1045CTLQ-13 SBR1045CTLQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
товару немає в наявності
В кошику  од. на суму  грн.
DXT5551-13 DXT5551.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 1.2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Current gain: 30...250
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
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KBP10G ds21203.pdf
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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PDR5G-13 ds30552.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
PDR5G-13 ds30552.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5000+20.83 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
DMN6075S-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED91CA9E2B78A18&compId=DMN6075S.pdf?ci_sign=058d33862ba6a5f1907e833950d4837ba7d3b69c
DMN6075S-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; 0.5W; SOT23
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
On-state resistance: 0.12Ω
Power dissipation: 0.5W
Drain current: 1.5A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: 7 inch reel; tape
на замовлення 3292 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+15.49 грн
37+11.03 грн
43+9.43 грн
63+6.39 грн
100+5.51 грн
500+4.96 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
BC858CW-7-F BC856AW-BC858CW.pdf
BC858CW-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 100mA; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
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APX803L20-47SA-7 APX803L.pdf
Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 0.9...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 1µA
Maximum output current: 20mA
Threshold on-voltage: 4.7V
Kind of package: reel; tape
Number of channels: 1
Delay time: 220ms
Integrated circuit features: ±1,5% accuracy
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ZXTN19060CFFTA ZXTN19060CFF.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+25.56 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
S5MC-13-F pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B983543627B4C143&compId=S5AC_ser.pdf?ci_sign=78a844e5c7496fd8adffaaf94ae8d3c0f76d60d5
S5MC-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 5A; SMC; Ufmax: 1.15V; Ifsm: 100A
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Capacitance: 40pF
Max. forward voltage: 1.15V
Load current: 5A
Max. forward impulse current: 100A
Max. off-state voltage: 1kV
на замовлення 2663 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+29.27 грн
19+21.42 грн
21+19.90 грн
100+15.43 грн
500+12.47 грн
1000+11.99 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
S8MC-13 ds31117.pdf
S8MC-13
+1
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 8A; SMC; Ufmax: 0.985V; Ifsm: 200A
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Capacitance: 45pF
Max. forward voltage: 0.985V
Load current: 8A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
на замовлення 2688 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+30.99 грн
18+22.94 грн
50+19.74 грн
75+18.94 грн
100+18.38 грн
150+17.66 грн
250+16.70 грн
500+15.51 грн
1000+14.31 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
2DC2412R-7 2DC2412R.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 350mW; SOT23
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Collector current: 0.15A
Power dissipation: 0.35W
Collector-emitter voltage: 50V
Current gain: 180...390
Quantity in set/package: 3000pcs.
Polarisation: bipolar
Frequency: 80...180MHz
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df06m pVersion=0046&contRep=ZT&docId=005056AB90B41EDBA1FF160CC11940C7&compId=DF005_10M.pdf?ci_sign=2f24257723bce9869f6db8061fe3b748fd7f107c
df06m
Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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AP7366-33W5-7 AP7366.pdf
AP7366-33W5-7
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 3.3V
Output current: 0.6A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7366
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.2...6V
Integrated circuit features: shutdown mode control input
на замовлення 619 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
32+13.77 грн
40+10.23 грн
44+9.11 грн
52+7.83 грн
100+6.31 грн
250+6.23 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
DMN3016LSS-13 DMN3016LSS.pdf
DMN3016LSS-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.5A; Idm: 80A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.5A
Pulsed drain current: 80A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 25.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 1300 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+40.46 грн
15+28.45 грн
100+18.62 грн
250+15.75 грн
500+13.99 грн
1000+12.63 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
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