Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74546) > Сторінка 1240 з 1243
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
ZXMS6004DGTA | DIODES INCORPORATED |
![]() Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 1.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223 On-state resistance: 0.6Ω Kind of package: reel; tape Supply voltage: 0...5.5V DC Operating temperature: -40...125°C |
на замовлення 1540 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
SMAJ90CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 100÷111V; 2.7A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 90V Breakdown voltage: 100...111V Max. forward impulse current: 2.7A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
APX803L20-34SA-7 | DIODES INCORPORATED |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23 Active logical level: low Kind of RESET output: open drain Kind of integrated circuit: power on reset monitor (PoR) Kind of package: reel; tape Mounting: SMD Case: SOT23 Type of integrated circuit: supervisor circuit Operating temperature: -40...85°C DC supply current: 1µA Maximum output current: 20mA Delay time: 220ms Supply voltage: 0.9...5.5V DC Threshold on-voltage: 3.4V Integrated circuit features: ±1,5% accuracy |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
DFLS240-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®123; SMD; 40V; 2A; reel,tape Case: PowerDI®123 Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Capacitance: 28pF Leakage current: 6mA Max. forward voltage: 0.7V Load current: 2A Max. forward impulse current: 40A Max. off-state voltage: 40V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DFLS240LQ-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®123; SMD; 40V; 2A; 12ns; 1.67W Application: automotive industry Case: PowerDI®123 Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Capacitance: 90pF Reverse recovery time: 12ns Leakage current: 10mA Max. forward voltage: 0.65V Power dissipation: 1.67W Load current: 2A Max. forward impulse current: 50A Max. off-state voltage: 40V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DFLS240Q-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®123; SMD; 40V; 2A; reel,tape Application: automotive industry Case: PowerDI®123 Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Capacitance: 28pF Leakage current: 6mA Max. forward voltage: 0.7V Load current: 2A Max. forward impulse current: 40A Max. off-state voltage: 40V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
AP7345D-3333RH4-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; X2DFN8; SMD Case: X2DFN8 Mounting: SMD Kind of package: reel; tape Type of integrated circuit: voltage regulator Operating temperature: -40...85°C Output current: 0.3A Voltage drop: 0.29V Number of channels: 2 Tolerance: ±1.5% Input voltage: 1.7...5.25V Output voltage: 3.3V; 3.3/3.3V DC Manufacturer series: AP7345 Kind of voltage regulator: fixed; LDO; linear Integrated circuit features: output discharge; shutdown mode control input |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DDTA143ZCA-7-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Quantity in set/package: 3000pcs. Current gain: 80 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
74AHCT1G08QSE-7 | DIODES INCORPORATED |
![]() Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT353; 4.5÷5.5VDC; AHCT Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SOT353 Supply voltage: 4.5...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: AHCT Kind of output: push-pull |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
74AHCT1G08QW5-7 | DIODES INCORPORATED |
![]() Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT25; 4.5÷5.5VDC; -40÷150°C Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SOT25 Supply voltage: 4.5...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: AHCT Kind of output: push-pull |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
![]() |
74AHCT1G08W5-7 | DIODES INCORPORATED |
![]() Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 4.5÷5.5VDC; AHCT Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOT25 Supply voltage: 4.5...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: AHCT Kind of output: totem pole Kind of input: with Schmitt trigger |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BZT52C51S-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 51V; SMD; reel,tape; SOD323; single diode Tolerance: ±6% Power dissipation: 0.2W Zener voltage: 51V Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOD323 Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
ZXMN4A06GTA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 5.6A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 484 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
ZXTN25060BFHTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 27000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||
![]() |
BAS40LP-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; X1-DFN1006-2; SMD; 40V; 0.8A Type of diode: Schottky rectifying Case: X1-DFN1006-2 Mounting: SMD Max. off-state voltage: 40V Load current: 0.8A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 1A Kind of package: reel; tape |
на замовлення 83 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
BCX5216QTA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89; automotive industry Polarisation: bipolar Mounting: SMD Case: SOT89 Type of transistor: PNP Kind of package: reel; tape Collector current: 1A Power dissipation: 1W Pulsed collector current: 2A Collector-emitter voltage: 60V Current gain: 100...250 Quantity in set/package: 1000pcs. Frequency: 150MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BCX5216TA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89 Polarisation: bipolar Mounting: SMD Case: SOT89 Type of transistor: PNP Kind of package: reel; tape Collector current: 1A Power dissipation: 1W Collector-emitter voltage: 60V Current gain: 100...250 Quantity in set/package: 1000pcs. Frequency: 150MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
BCX5216TC | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89 Polarisation: bipolar Mounting: SMD Case: SOT89 Type of transistor: PNP Kind of package: reel; tape Collector current: 1A Power dissipation: 1W Collector-emitter voltage: 60V Current gain: 100...250 Quantity in set/package: 4000pcs. Frequency: 150MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
![]() |
BSR43TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 80V; 1A; 1W; SOT89 Quantity in set/package: 1000pcs. Frequency: 100MHz Polarisation: bipolar Type of transistor: NPN Kind of package: reel; tape Case: SOT89 Mounting: SMD Collector current: 1A Power dissipation: 1W Current gain: 30...300 Collector-emitter voltage: 80V |
на замовлення 2056 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
DMP45H4D9HJ3 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -22.4A; 41W; TO251 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -450V Drain current: -3A Pulsed drain current: -22.4A Power dissipation: 41W Case: TO251 Gate-source voltage: ±30V On-state resistance: 4.9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 13.7nC |
на замовлення 212 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
ZXMN6A11DN8TA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 2.6A; 1.25W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.6A Power dissipation: 1.25W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
DMN63D8LV-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.26A; 0.45W; SOT563; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.26A Power dissipation: 0.45W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 2.8Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 1795 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
DMN62D0UDW-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.29A; 0.32W; SOT363; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.29A Power dissipation: 0.32W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 1850 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
DMN53D0LDW-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.25A; 0.31W; SOT363; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.25A Power dissipation: 0.31W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 895 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
DMN63D8LDWQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.26A; 0.3W; SOT363; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.26A Power dissipation: 0.3W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 2.8Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Application: automotive industry |
на замовлення 4575 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
DMN3190LDW-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.9A; Idm: 9.6A; 0.32W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.9A Power dissipation: 0.32W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Pulsed drain current: 9.6A |
на замовлення 513 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
DDC123JU-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; R1: 2.2kΩ Type of transistor: NPN x2 Kind of package: reel; tape Case: SOT363 Collector current: 0.1A Power dissipation: 0.2W Collector-emitter voltage: 50V Current gain: 100...600 Base resistor: 2.2kΩ Quantity in set/package: 3000pcs. Base-emitter resistor: 47kΩ Frequency: 250MHz Polarisation: bipolar Kind of transistor: BRT Mounting: SMD |
на замовлення 2549 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
DMN2450UFD-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 3A; 890mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.7A Pulsed drain current: 3A Power dissipation: 0.89W Case: X1-DFN1212-3 Gate-source voltage: ±12V On-state resistance: 1.6Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 0.7nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMN2450UFB4-7B | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.8A Pulsed drain current: 3A Power dissipation: 0.9W Case: X2-DFN1006-3 Gate-source voltage: ±12V On-state resistance: 0.7Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 1.3nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMN2450UFB4-7R | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.8A Pulsed drain current: 3A Power dissipation: 0.9W Case: X2-DFN1006-3 Gate-source voltage: ±12V On-state resistance: 0.7Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 1.3nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMN2451UFB4Q-7B | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1.3A; Idm: 3A; 1.1W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.3A Pulsed drain current: 3A Power dissipation: 1.1W Case: X2-DFN1006-3 Gate-source voltage: ±12V On-state resistance: 0.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 6.4nC Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMN2451UFB4-7B | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||
DMN2451UFDQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 57000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||
74AHC1G07QSE-7 | DIODES INCORPORATED |
![]() Description: IC: digital Type of integrated circuit: digital |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||
![]() |
DMP6110SVTQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -6.5A; 1.2W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6.5A Power dissipation: 1.2W Case: TSOT26 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
на замовлення 1333 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
RS1G-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Case: SMA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
RS1GB-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMB; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Case: SMB Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
RS1DB-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 200V; 1A; SMB; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Case: SMB Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
![]() |
GBU1010 | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 10A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
DMN2501UFB4-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; Idm: 6A; 700mW Case: X2-DFN1006-3 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 2nC On-state resistance: 0.7Ω Power dissipation: 0.7W Drain current: 1.4A Pulsed drain current: 6A Gate-source voltage: ±8V Drain-source voltage: 20V Kind of package: 7 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMN2250UFB-7B | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1.03A; Idm: 6A; 300mW Case: X1-DFN1006-3 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 3.1nC On-state resistance: 0.25Ω Power dissipation: 0.3W Drain current: 1.03A Pulsed drain current: 6A Gate-source voltage: ±8V Drain-source voltage: 20V Kind of package: 7 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
ZXTP2012ASTZ | DIODES INCORPORATED |
![]() Description: Transistor: PNP; unipolar; 60V; 3.5A; 1W; TO92 Type of transistor: PNP Polarisation: unipolar Collector-emitter voltage: 60V Collector current: 3.5A Power dissipation: 1W Case: TO92 Pulsed collector current: 15A Current gain: 10...300 Mounting: THT Quantity in set/package: 2000pcs. Frequency: 120MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FMMT718TC | DIODES INCORPORATED |
![]() Description: Transistor: PNP Type of transistor: PNP |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||
FMMT734TA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; Darlington; 100V; 0.8A; 806mW; SOT23 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 0.8A Power dissipation: 0.806W Case: SOT23 Pulsed collector current: 5A Current gain: 150...60000 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 140MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FMMT717QTA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 12V; 2.5A; 806mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 2.5A Power dissipation: 0.806W Case: SOT23 Pulsed collector current: 10A Current gain: 45...475 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 80...110MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FMMT723QTA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 100V; 1A; 806mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 0.806W Case: SOT23 Pulsed collector current: 2.5A Current gain: 30...475 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 150...200MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
ZXTN25100DGQTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||
![]() |
ZXTN2011G | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 100V; 6A; 3W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 3W Case: SOT223 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 130MHz |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
ZXTN25012EZTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 12V; 6.5A; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 6.5A Case: SOT89 Current gain: 30...1500 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 260MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
ZXTN08400BFFTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 400V; 0.5A; SOT23F Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.5A Case: SOT23F Pulsed collector current: 1A Current gain: 10...300 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 40MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
![]() |
ZXTN19020DZQTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 20V; 7.5A; SOT89; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 7.5A Case: SOT89 Pulsed collector current: 20A Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 160MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
ZXTN2005ZTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 25V; 5.5A; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 5.5A Case: SOT89 Current gain: 40...450 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
ZXTN2011GTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 100V; 6A; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Case: SOT223 Current gain: 10...300 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 130MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
ZXTN619MATA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 50V; 4.3A; 2.45W; U-DFN2020-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 4.3A Power dissipation: 2.45W Case: U-DFN2020-3 Current gain: 40...400 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 165MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
ZXTN620MATA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 80V; 3.8A; 2.45W; DFN2020B-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 3.8A Power dissipation: 2.45W Case: DFN2020B-3 Pulsed collector current: 5A Current gain: 10...900 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 100...160MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
ZXTN2010ZTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 60V; 5A; 2.1W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 5A Power dissipation: 2.1W Case: SOT89 Current gain: 200 Mounting: SMD Frequency: 130MHz |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||
ZXTN25040DFHTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||
ZXTN04120HP5TC | DIODES INCORPORATED |
![]() Description: ZXTN04120HP5TC |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||
ZXTN04120HFFTA | DIODES INCORPORATED |
![]() Description: ZXTN04120HFFTA |
на замовлення 9000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||
ZXTN19020DFFTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
|
ZXMS6004DGTA |
![]() |
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
на замовлення 1540 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 101.46 грн |
10+ | 60.09 грн |
23+ | 40.77 грн |
63+ | 38.56 грн |
500+ | 37.13 грн |
SMAJ90CA-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 100÷111V; 2.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 2.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 100÷111V; 2.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 2.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
APX803L20-34SA-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 1µA
Maximum output current: 20mA
Delay time: 220ms
Supply voltage: 0.9...5.5V DC
Threshold on-voltage: 3.4V
Integrated circuit features: ±1,5% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 1µA
Maximum output current: 20mA
Delay time: 220ms
Supply voltage: 0.9...5.5V DC
Threshold on-voltage: 3.4V
Integrated circuit features: ±1,5% accuracy
товару немає в наявності
В кошику
од. на суму грн.
DFLS240-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 40V; 2A; reel,tape
Case: PowerDI®123
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 28pF
Leakage current: 6mA
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 40V; 2A; reel,tape
Case: PowerDI®123
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 28pF
Leakage current: 6mA
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 40V
товару немає в наявності
В кошику
од. на суму грн.
DFLS240LQ-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 40V; 2A; 12ns; 1.67W
Application: automotive industry
Case: PowerDI®123
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 90pF
Reverse recovery time: 12ns
Leakage current: 10mA
Max. forward voltage: 0.65V
Power dissipation: 1.67W
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 40V; 2A; 12ns; 1.67W
Application: automotive industry
Case: PowerDI®123
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 90pF
Reverse recovery time: 12ns
Leakage current: 10mA
Max. forward voltage: 0.65V
Power dissipation: 1.67W
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 40V
товару немає в наявності
В кошику
од. на суму грн.
DFLS240Q-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 40V; 2A; reel,tape
Application: automotive industry
Case: PowerDI®123
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 28pF
Leakage current: 6mA
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 40V; 2A; reel,tape
Application: automotive industry
Case: PowerDI®123
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 28pF
Leakage current: 6mA
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 40V
товару немає в наявності
В кошику
од. на суму грн.
AP7345D-3333RH4-7 |
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; X2DFN8; SMD
Case: X2DFN8
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 0.3A
Voltage drop: 0.29V
Number of channels: 2
Tolerance: ±1.5%
Input voltage: 1.7...5.25V
Output voltage: 3.3V; 3.3/3.3V DC
Manufacturer series: AP7345
Kind of voltage regulator: fixed; LDO; linear
Integrated circuit features: output discharge; shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; X2DFN8; SMD
Case: X2DFN8
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 0.3A
Voltage drop: 0.29V
Number of channels: 2
Tolerance: ±1.5%
Input voltage: 1.7...5.25V
Output voltage: 3.3V; 3.3/3.3V DC
Manufacturer series: AP7345
Kind of voltage regulator: fixed; LDO; linear
Integrated circuit features: output discharge; shutdown mode control input
товару немає в наявності
В кошику
од. на суму грн.
DDTA143ZCA-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Current gain: 80
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Current gain: 80
товару немає в наявності
В кошику
од. на суму грн.
74AHCT1G08QSE-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT353; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT353; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: push-pull
товару немає в наявності
В кошику
од. на суму грн.
74AHCT1G08QW5-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT25; 4.5÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT25; 4.5÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: push-pull
товару немає в наявності
В кошику
од. на суму грн.
74AHCT1G08W5-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: totem pole
Kind of input: with Schmitt trigger
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: totem pole
Kind of input: with Schmitt trigger
товару немає в наявності
В кошику
од. на суму грн.
BZT52C51S-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 51V; SMD; reel,tape; SOD323; single diode
Tolerance: ±6%
Power dissipation: 0.2W
Zener voltage: 51V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 51V; SMD; reel,tape; SOD323; single diode
Tolerance: ±6%
Power dissipation: 0.2W
Zener voltage: 51V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
товару немає в наявності
В кошику
од. на суму грн.
ZXMN4A06GTA |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5.6A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5.6A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 484 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 63.09 грн |
10+ | 44.73 грн |
25+ | 41.64 грн |
ZXTN25060BFHTA |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 27000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 19.27 грн |
BAS40LP-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X1-DFN1006-2; SMD; 40V; 0.8A
Type of diode: Schottky rectifying
Case: X1-DFN1006-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.8A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X1-DFN1006-2; SMD; 40V; 0.8A
Type of diode: Schottky rectifying
Case: X1-DFN1006-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.8A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
на замовлення 83 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 18.76 грн |
26+ | 15.36 грн |
28+ | 14.33 грн |
BCX5216QTA |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89; automotive industry
Polarisation: bipolar
Mounting: SMD
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 1W
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...250
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89; automotive industry
Polarisation: bipolar
Mounting: SMD
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 1W
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...250
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
BCX5216TA |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Polarisation: bipolar
Mounting: SMD
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 1W
Collector-emitter voltage: 60V
Current gain: 100...250
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Polarisation: bipolar
Mounting: SMD
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 1W
Collector-emitter voltage: 60V
Current gain: 100...250
Quantity in set/package: 1000pcs.
Frequency: 150MHz
товару немає в наявності
В кошику
од. на суму грн.
BCX5216TC |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Polarisation: bipolar
Mounting: SMD
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 1W
Collector-emitter voltage: 60V
Current gain: 100...250
Quantity in set/package: 4000pcs.
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Polarisation: bipolar
Mounting: SMD
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 1W
Collector-emitter voltage: 60V
Current gain: 100...250
Quantity in set/package: 4000pcs.
Frequency: 150MHz
товару немає в наявності
В кошику
од. на суму грн.
BSR43TA |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1W; SOT89
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT89
Mounting: SMD
Collector current: 1A
Power dissipation: 1W
Current gain: 30...300
Collector-emitter voltage: 80V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1W; SOT89
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT89
Mounting: SMD
Collector current: 1A
Power dissipation: 1W
Current gain: 30...300
Collector-emitter voltage: 80V
на замовлення 2056 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 40.07 грн |
17+ | 24.07 грн |
86+ | 10.93 грн |
235+ | 10.29 грн |
1000+ | 10.13 грн |
2000+ | 9.90 грн |
DMP45H4D9HJ3 |
![]() |
Виробник: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -22.4A; 41W; TO251
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Drain current: -3A
Pulsed drain current: -22.4A
Power dissipation: 41W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 13.7nC
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -22.4A; 41W; TO251
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Drain current: -3A
Pulsed drain current: -22.4A
Power dissipation: 41W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 13.7nC
на замовлення 212 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 85.26 грн |
25+ | 58.03 грн |
33+ | 28.98 грн |
89+ | 27.39 грн |
ZXMN6A11DN8TA |
![]() |
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 2.6A; 1.25W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.6A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 2.6A; 1.25W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.6A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 9 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 83.56 грн |
DMN63D8LV-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.26A; 0.45W; SOT563; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.26A
Power dissipation: 0.45W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.26A; 0.45W; SOT563; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.26A
Power dissipation: 0.45W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 1795 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 20.46 грн |
32+ | 12.43 грн |
50+ | 8.69 грн |
100+ | 7.41 грн |
285+ | 3.27 грн |
784+ | 3.09 грн |
DMN62D0UDW-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.29A; 0.32W; SOT363; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.29A
Power dissipation: 0.32W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.29A; 0.32W; SOT363; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.29A
Power dissipation: 0.32W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 1850 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.79 грн |
46+ | 8.63 грн |
100+ | 6.24 грн |
191+ | 4.88 грн |
525+ | 4.62 грн |
1000+ | 4.51 грн |
DMN53D0LDW-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.25A; 0.31W; SOT363; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.25A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.25A; 0.31W; SOT363; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.25A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 895 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.38 грн |
60+ | 6.65 грн |
76+ | 5.27 грн |
100+ | 4.79 грн |
250+ | 3.72 грн |
687+ | 3.52 грн |
DMN63D8LDWQ-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.26A; 0.3W; SOT363; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.26A
Power dissipation: 0.3W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.26A; 0.3W; SOT363; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.26A
Power dissipation: 0.3W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
на замовлення 4575 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.94 грн |
50+ | 8.08 грн |
61+ | 6.59 грн |
100+ | 4.70 грн |
282+ | 3.31 грн |
500+ | 3.18 грн |
774+ | 3.13 грн |
3000+ | 3.01 грн |
DMN3190LDW-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.9A; Idm: 9.6A; 0.32W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.9A
Power dissipation: 0.32W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 9.6A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.9A; Idm: 9.6A; 0.32W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.9A
Power dissipation: 0.32W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 9.6A
на замовлення 513 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.79 грн |
42+ | 9.50 грн |
49+ | 8.23 грн |
67+ | 5.94 грн |
100+ | 5.27 грн |
188+ | 4.96 грн |
500+ | 4.50 грн |
DDC123JU-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; R1: 2.2kΩ
Type of transistor: NPN x2
Kind of package: reel; tape
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 100...600
Base resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; R1: 2.2kΩ
Type of transistor: NPN x2
Kind of package: reel; tape
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 100...600
Base resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Mounting: SMD
на замовлення 2549 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.38 грн |
60+ | 6.65 грн |
67+ | 5.94 грн |
100+ | 4.13 грн |
250+ | 3.66 грн |
426+ | 2.19 грн |
1170+ | 2.07 грн |
DMN2450UFD-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 3A; 890mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Pulsed drain current: 3A
Power dissipation: 0.89W
Case: X1-DFN1212-3
Gate-source voltage: ±12V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 0.7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 3A; 890mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Pulsed drain current: 3A
Power dissipation: 0.89W
Case: X1-DFN1212-3
Gate-source voltage: ±12V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 0.7nC
товару немає в наявності
В кошику
од. на суму грн.
DMN2450UFB4-7B |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Pulsed drain current: 3A
Power dissipation: 0.9W
Case: X2-DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.3nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Pulsed drain current: 3A
Power dissipation: 0.9W
Case: X2-DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.3nC
товару немає в наявності
В кошику
од. на суму грн.
DMN2450UFB4-7R |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Pulsed drain current: 3A
Power dissipation: 0.9W
Case: X2-DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.3nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Pulsed drain current: 3A
Power dissipation: 0.9W
Case: X2-DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.3nC
товару немає в наявності
В кошику
од. на суму грн.
DMN2451UFB4Q-7B |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.3A; Idm: 3A; 1.1W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.3A
Pulsed drain current: 3A
Power dissipation: 1.1W
Case: X2-DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 6.4nC
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.3A; Idm: 3A; 1.1W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.3A
Pulsed drain current: 3A
Power dissipation: 1.1W
Case: X2-DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 6.4nC
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
DMN2451UFB4-7B |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 3.17 грн |
DMN2451UFDQ-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 57000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 4.83 грн |
74AHC1G07QSE-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 4.34 грн |
DMP6110SVTQ-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.5A; 1.2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.5A
Power dissipation: 1.2W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.5A; 1.2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.5A
Power dissipation: 1.2W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 1333 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 58.83 грн |
11+ | 39.51 грн |
45+ | 20.90 грн |
123+ | 19.79 грн |
1000+ | 19.24 грн |
RS1G-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
RS1GB-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
RS1DB-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
GBU1010 |
![]() |
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
DMN2501UFB4-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; Idm: 6A; 700mW
Case: X2-DFN1006-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 2nC
On-state resistance: 0.7Ω
Power dissipation: 0.7W
Drain current: 1.4A
Pulsed drain current: 6A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; Idm: 6A; 700mW
Case: X2-DFN1006-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 2nC
On-state resistance: 0.7Ω
Power dissipation: 0.7W
Drain current: 1.4A
Pulsed drain current: 6A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
товару немає в наявності
В кошику
од. на суму грн.
DMN2250UFB-7B |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.03A; Idm: 6A; 300mW
Case: X1-DFN1006-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 3.1nC
On-state resistance: 0.25Ω
Power dissipation: 0.3W
Drain current: 1.03A
Pulsed drain current: 6A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.03A; Idm: 6A; 300mW
Case: X1-DFN1006-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 3.1nC
On-state resistance: 0.25Ω
Power dissipation: 0.3W
Drain current: 1.03A
Pulsed drain current: 6A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
товару немає в наявності
В кошику
од. на суму грн.
ZXTP2012ASTZ |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; unipolar; 60V; 3.5A; 1W; TO92
Type of transistor: PNP
Polarisation: unipolar
Collector-emitter voltage: 60V
Collector current: 3.5A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 15A
Current gain: 10...300
Mounting: THT
Quantity in set/package: 2000pcs.
Frequency: 120MHz
Category: PNP THT transistors
Description: Transistor: PNP; unipolar; 60V; 3.5A; 1W; TO92
Type of transistor: PNP
Polarisation: unipolar
Collector-emitter voltage: 60V
Collector current: 3.5A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 15A
Current gain: 10...300
Mounting: THT
Quantity in set/package: 2000pcs.
Frequency: 120MHz
товару немає в наявності
В кошику
од. на суму грн.
FMMT718TC |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 12.79 грн |
FMMT734TA |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 0.8A; 806mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 5A
Current gain: 150...60000
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 0.8A; 806mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 5A
Current gain: 150...60000
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 140MHz
товару немає в наявності
В кошику
од. на суму грн.
FMMT717QTA |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 2.5A; 806mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 2.5A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 10A
Current gain: 45...475
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 80...110MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 2.5A; 806mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 2.5A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 10A
Current gain: 45...475
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 80...110MHz
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
FMMT723QTA |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 806mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 2.5A
Current gain: 30...475
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...200MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 806mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 2.5A
Current gain: 30...475
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...200MHz
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
ZXTN25100DGQTA |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 26.26 грн |
ZXTN2011G |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
на замовлення 6 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 65.71 грн |
ZXTN25012EZTA |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 6.5A; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 6.5A
Case: SOT89
Current gain: 30...1500
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 260MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 6.5A; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 6.5A
Case: SOT89
Current gain: 30...1500
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 260MHz
товару немає в наявності
В кошику
од. на суму грн.
ZXTN08400BFFTA |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.5A; SOT23F
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Case: SOT23F
Pulsed collector current: 1A
Current gain: 10...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 40MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.5A; SOT23F
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Case: SOT23F
Pulsed collector current: 1A
Current gain: 10...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 40MHz
товару немає в наявності
В кошику
од. на суму грн.
ZXTN19020DZQTA |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 7.5A; SOT89; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 7.5A
Case: SOT89
Pulsed collector current: 20A
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 160MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 7.5A; SOT89; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 7.5A
Case: SOT89
Pulsed collector current: 20A
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 160MHz
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
ZXTN2005ZTA |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 5.5A; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5.5A
Case: SOT89
Current gain: 40...450
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 5.5A; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5.5A
Case: SOT89
Current gain: 40...450
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
товару немає в наявності
В кошику
од. на суму грн.
ZXTN2011GTA |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Case: SOT223
Current gain: 10...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Case: SOT223
Current gain: 10...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
товару немає в наявності
В кошику
од. на суму грн.
ZXTN619MATA |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 4.3A; 2.45W; U-DFN2020-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 4.3A
Power dissipation: 2.45W
Case: U-DFN2020-3
Current gain: 40...400
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 165MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 4.3A; 2.45W; U-DFN2020-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 4.3A
Power dissipation: 2.45W
Case: U-DFN2020-3
Current gain: 40...400
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 165MHz
товару немає в наявності
В кошику
од. на суму грн.
ZXTN620MATA |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 3.8A; 2.45W; DFN2020B-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3.8A
Power dissipation: 2.45W
Case: DFN2020B-3
Pulsed collector current: 5A
Current gain: 10...900
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...160MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 3.8A; 2.45W; DFN2020B-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3.8A
Power dissipation: 2.45W
Case: DFN2020B-3
Pulsed collector current: 5A
Current gain: 10...900
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...160MHz
товару немає в наявності
В кошику
од. на суму грн.
ZXTN2010ZTA |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 2.1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 2.1W
Case: SOT89
Current gain: 200
Mounting: SMD
Frequency: 130MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 2.1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 2.1W
Case: SOT89
Current gain: 200
Mounting: SMD
Frequency: 130MHz
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 25.66 грн |
ZXTN25040DFHTA |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 19.44 грн |
ZXTN04120HP5TC |
![]() |
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5000+ | 15.26 грн |
ZXTN04120HFFTA |
![]() |
на замовлення 9000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 17.56 грн |
ZXTN19020DFFTA |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 27.71 грн |