Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (73722) > Сторінка 544 з 1229
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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| AP3190TW6-7 | Diodes Incorporated |
Description: ACDC PSR SWITCHER SOT26 T&R 3KPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 0V ~ 28V Applications: Power Supply Controller Supplier Device Package: SOT-26 Current - Supply: 450 µA |
на замовлення 2923 шт: термін постачання 21-31 дні (днів) |
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| AP3190W6-7 | Diodes Incorporated |
Description: ACDC PSR SWITCHER SOT26 T&R 3KPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 0V ~ 25V Applications: Power Supply Controller Supplier Device Package: SOT-26 Current - Supply: 450 µA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| AP3190W6-7 | Diodes Incorporated |
Description: ACDC PSR SWITCHER SOT26 T&R 3KPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 0V ~ 25V Applications: Power Supply Controller Supplier Device Package: SOT-26 Current - Supply: 450 µA |
на замовлення 2980 шт: термін постачання 21-31 дні (днів) |
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PI7C9X2G404SLBQFDEX | Diodes Incorporated |
Description: IC INTERFACE SPECIALIZED 128LQFPPackaging: Tape & Reel (TR) Package / Case: 128-LQFP Mounting Type: Surface Mount Interface: PCI Express Applications: Packet Switch, 4-Port/4-Lane Supplier Device Package: 128-LQFP (14x14) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
| PI7C9X2G404EVAQ2ZXAEX | Diodes Incorporated |
Description: PACKET SWITCH V-QFN100100-136 T&Packaging: Tape & Reel (TR) Package / Case: 136-VFQFN Dual Rows, Exposed Pad Mounting Type: Surface Mount Interface: I2C, PCI Express, SMBus Voltage - Supply: 0.95V ~ 1.1V Applications: Packet Switch, 4-Port/4-Lane Supplier Device Package: 136-aQFN (10x10) Grade: Automotive Qualification: AEC-Q100 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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FJ2450001 | Diodes Incorporated |
Description: XTAL OSC XO 24.5760MHZ CMOS SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: CMOS Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Voltage - Supply: 3.3V Height - Seated (Max): 0.039" (1.00mm) Frequency: 24.576 MHz Base Resonator: Crystal |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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FJ2450003 | Diodes Incorporated |
Description: XTAL OSC XO 24.5760MHZ CMOS SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: CMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Height - Seated (Max): 0.039" (1.00mm) Frequency: 24.576 MHz Base Resonator: Crystal |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SDM2A40CSP-7B | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 2A X3WLB16082Packaging: Tape & Reel (TR) Package / Case: 2-XDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 14 ns Technology: Schottky Capacitance @ Vr, F: 81pF @ 5V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: X3-WLB1608-2 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SDM2A40CSP-7B | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 2A X3WLB16082Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 14 ns Technology: Schottky Capacitance @ Vr, F: 81pF @ 5V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: X3-WLB1608-2 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
на замовлення 16055 шт: термін постачання 21-31 дні (днів) |
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B340LA-13-F-2477 | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 3A SMA Packaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 180pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A Current - Reverse Leakage @ Vr: 2 mA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PI6CB332001ZXBIEX-13RA | Diodes Incorporated |
Description: IC CLK BUFFER 1:20 400MHZ 80AQFNPackaging: Tape & Reel (TR) Package / Case: 80-VFQFN Dual Rows, Exposed Pad Number of Circuits: 1 Mounting Type: Surface Mount Output: HCSL Type: Clock Buffer Input: CMOS, HCSL Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.465V Ratio - Input:Output: 1:20 Differential - Input:Output: Yes/Yes Supplier Device Package: 80-aQFN (6x6) Frequency - Max: 400 MHz |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
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PI6CB332001ZXBIEX-13RA | Diodes Incorporated |
Description: IC CLK BUFFER 1:20 400MHZ 80AQFNPackaging: Cut Tape (CT) Package / Case: 80-VFQFN Dual Rows, Exposed Pad Number of Circuits: 1 Mounting Type: Surface Mount Output: HCSL Type: Clock Buffer Input: CMOS, HCSL Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.465V Ratio - Input:Output: 1:20 Differential - Input:Output: Yes/Yes Supplier Device Package: 80-aQFN (6x6) Frequency - Max: 400 MHz |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
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PI6CB332001AZXBIEX-13RA | Diodes Incorporated |
Description: IC CLK BUFFER 1:20 400MHZ 80AQFNPackaging: Tape & Reel (TR) Package / Case: 80-VFQFN Dual Rows, Exposed Pad Number of Circuits: 1 Mounting Type: Surface Mount Output: HCSL Type: Clock Buffer Input: CMOS, HCSL Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.465V Ratio - Input:Output: 1:20 Differential - Input:Output: Yes/Yes Supplier Device Package: 80-aQFN (6x6) Frequency - Max: 400 MHz |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PI6CB332001AZXBIEX-13RA | Diodes Incorporated |
Description: IC CLK BUFFER 1:20 400MHZ 80AQFNPackaging: Cut Tape (CT) Package / Case: 80-VFQFN Dual Rows, Exposed Pad Number of Circuits: 1 Mounting Type: Surface Mount Output: HCSL Type: Clock Buffer Input: CMOS, HCSL Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.465V Ratio - Input:Output: 1:20 Differential - Input:Output: Yes/Yes Supplier Device Package: 80-aQFN (6x6) Frequency - Max: 400 MHz |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PI3HDX12211AZHEX | Diodes Incorporated |
Description: ACTIVE HDMI V-QFN3590-42 T&R 3.5Signal Conditioning: Input Equalization Supplier Device Package: 42-TQFN (9x3.5) Data Rate (Max): 12Gbps Applications: HDMI, I2C Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C Input: CML Type: Buffer, ReDriver Output: CML Mounting Type: Surface Mount Number of Channels: 4 Package / Case: 42-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 2300 шт: термін постачання 21-31 дні (днів) |
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AP3108LGSTR-G1 | Diodes Incorporated |
Description: IC SECONDARY SIDE CTRL 9SSOPPackaging: Tape & Reel (TR) Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads Mounting Type: Surface Mount Voltage - Input: 10V ~ 50V Operating Temperature: -40°C ~ 85°C Voltage - Supply: 10V ~ 28V Applications: Secondary-Side Controller Supplier Device Package: 9-SSOP Current - Supply: 1.7 mA DigiKey Programmable: Not Verified |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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AP3108LGSTR-G1 | Diodes Incorporated |
Description: IC SECONDARY SIDE CTRL 9SSOPPackaging: Cut Tape (CT) Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads Mounting Type: Surface Mount Voltage - Input: 10V ~ 50V Operating Temperature: -40°C ~ 85°C Voltage - Supply: 10V ~ 28V Applications: Secondary-Side Controller Supplier Device Package: 9-SSOP Current - Supply: 1.7 mA DigiKey Programmable: Not Verified |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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AP2181AFM-7 | Diodes Incorporated |
Description: IC PWR SWITCH P-CHAN 1:1 6UDFNFeatures: Status Flag Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 90mOhm Input Type: Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.5A Ratio - Input:Output: 1:1 Supplier Device Package: U-DFN2018-6 Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, Short Circuit, UVLO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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B340B-13-G | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 3A SMB Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 250pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| B340B-13-F-2477 | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 3A SMB Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 150 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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AH5794-WU-7 | Diodes Incorporated |
Description: IC MOTOR DRIVER ON/OFF TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 500mA Interface: On/Off Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 1.8V ~ 6V Applications: Fan Motor Driver Technology: Power MOSFET Voltage - Load: 1.8V ~ 6V Supplier Device Package: TSOT-26 Motor Type - AC, DC: Brushless DC (BLDC) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMTH10H4M5LPSW | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI50Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 107A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 30A, 10V Power Dissipation (Max): 4.7W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4843 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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DMTH10H4M5LPSW | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI50Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 107A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 30A, 10V Power Dissipation (Max): 4.7W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4843 pF @ 50 V |
на замовлення 1587 шт: термін постачання 21-31 дні (днів) |
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| JC25192002 | Diodes Incorporated |
Description: XO VOLTAGE CONTROL SEAM2520 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SDM2100S1F-7 | Diodes Incorporated |
Description: DIODE SCHOTTKY 100V 2A SOD123FPackaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 42pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 2 A Current - Reverse Leakage @ Vr: 150 nA @ 100 V |
на замовлення 65000 шт: термін постачання 21-31 дні (днів) |
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SDM2100S1F-7 | Diodes Incorporated |
Description: DIODE SCHOTTKY 100V 2A SOD123FPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 42pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 2 A Current - Reverse Leakage @ Vr: 150 nA @ 100 V |
на замовлення 65307 шт: термін постачання 21-31 дні (днів) |
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D3Z6V2BF-7 | Diodes Incorporated |
Description: DIODE ZENER 6.2V 400MW SOD323FTolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: SOD-323F Power - Max: 400 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 3 V |
на замовлення 99000 шт: термін постачання 21-31 дні (днів) |
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D3Z6V2BF-7 | Diodes Incorporated |
Description: DIODE ZENER 6.2V 400MW SOD323FTolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: SOD-323F Power - Max: 400 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 3 V |
на замовлення 99911 шт: термін постачання 21-31 дні (днів) |
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DDZ2V7ASF-7 | Diodes Incorporated |
Description: DIODE ZENER 2.65V 500MW SOD323FTolerance: ±4% Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 2.65 V Impedance (Max) (Zzt): 110 Ohms Supplier Device Package: SOD-323F Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 120 µA @ 1 V |
на замовлення 120000 шт: термін постачання 21-31 дні (днів) |
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DDZ2V7ASF-7 | Diodes Incorporated |
Description: DIODE ZENER 2.65V 500MW SOD323FTolerance: ±4% Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 2.65 V Impedance (Max) (Zzt): 110 Ohms Supplier Device Package: SOD-323F Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 120 µA @ 1 V |
на замовлення 122890 шт: термін постачання 21-31 дні (днів) |
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DDZ7V5ASF-7 | Diodes Incorporated |
Description: DIODE ZENER 7.04V 500MW SOD323FTolerance: ±3% Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 7.04 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: SOD-323F Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 7.5 µA @ 4 V |
на замовлення 189000 шт: термін постачання 21-31 дні (днів) |
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DDZ7V5ASF-7 | Diodes Incorporated |
Description: DIODE ZENER 7.04V 500MW SOD323FTolerance: ±3% Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 7.04 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: SOD-323F Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 7.5 µA @ 4 V |
на замовлення 191273 шт: термін постачання 21-31 дні (днів) |
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DDZ27BSF-7 | Diodes Incorporated |
Description: DIODE ZENER 25.62V 500MW SOD323FTolerance: ±3% Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 25.62 V Impedance (Max) (Zzt): 70 Ohms Supplier Device Package: SOD-323F Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 70 nA @ 23.7 V |
на замовлення 129000 шт: термін постачання 21-31 дні (днів) |
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DDZ27BSF-7 | Diodes Incorporated |
Description: DIODE ZENER 25.62V 500MW SOD323FTolerance: ±3% Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 25.62 V Impedance (Max) (Zzt): 70 Ohms Supplier Device Package: SOD-323F Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 70 nA @ 23.7 V |
на замовлення 131800 шт: термін постачання 21-31 дні (днів) |
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PI6ULS5V9511BUEX | Diodes Incorporated |
Description: INTERFACE I2C HOT SWAP MSOP-8 T&Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Delay Time: 70ns Number of Channels: 1 Mounting Type: Surface Mount Output: 2-Wire Bus Type: Buffer, Accelerator Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 5.5V Applications: I2C - Hotswap Current - Supply: 2.8mA Data Rate (Max): 400kHz Supplier Device Package: 8-MSOP Capacitance - Input: 7 pF |
на замовлення 1887 шт: термін постачання 21-31 дні (днів) |
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JT3211W0025.000000 | Diodes Incorporated |
Description: XTAL OSC TCXO 25.0000MHZ SMD Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Type: TCXO Frequency: 25 MHz Base Resonator: Crystal |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FD1920010 | Diodes Incorporated |
Description: XTAL OSC XO 19.2000MHZ CMOS SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm) Mounting Type: Surface Mount Output: CMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Height - Seated (Max): 0.051" (1.30mm) Frequency: 19.2 MHz Base Resonator: Crystal |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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BAT54AW-7-F-2477 | Diodes Incorporated |
Description: DIODE ARR SCHOT 30V 200MA SOT323 Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200mA Supplier Device Package: SOT-323 Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TB1500H-13-F | Diodes Incorporated |
Description: THYRISTOR 140V 400A DO-214AAPackaging: Tape & Reel (TR) Capacitance: 120pF Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Number of Elements: 1 Voltage - Breakover: 180V Voltage - Off State: 140V Voltage - On State: 3.5 V Supplier Device Package: SMB Current - Hold (Ih): 150 mA Current - Peak Pulse (10/1000µs): 100 A Current - Peak Pulse (8/20µs): 400 A |
на замовлення 117000 шт: термін постачання 21-31 дні (днів) |
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TB1500H-13-F | Diodes Incorporated |
Description: THYRISTOR 140V 400A DO-214AAPackaging: Cut Tape (CT) Capacitance: 120pF Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Number of Elements: 1 Voltage - Breakover: 180V Voltage - Off State: 140V Voltage - On State: 3.5 V Supplier Device Package: SMB Current - Hold (Ih): 150 mA Current - Peak Pulse (10/1000µs): 100 A Current - Peak Pulse (8/20µs): 400 A |
на замовлення 117000 шт: термін постачання 21-31 дні (днів) |
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TB1500H-13 | Diodes Incorporated |
Description: THYRISTOR 140V 400A DO-214AAPackaging: Cut Tape (CT) Capacitance: 120pF Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Number of Elements: 1 Voltage - Breakover: 180V Voltage - Off State: 140V Voltage - On State: 3.5 V Supplier Device Package: SMB Current - Hold (Ih): 150 mA Current - Peak Pulse (10/1000µs): 100 A Current - Peak Pulse (8/20µs): 400 A |
на замовлення 1337 шт: термін постачання 21-31 дні (днів) |
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DMP3007SPS-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 90A PWRDI5060-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Power Dissipation (Max): 2.7W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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DMP3007SPS-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 90A PWRDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Power Dissipation (Max): 2.7W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V |
на замовлення 2409 шт: термін постачання 21-31 дні (днів) |
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DMTH3002LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 100A PWRDI5060-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V Power Dissipation (Max): 1.2W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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DMTH3002LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 100A PWRDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V Power Dissipation (Max): 1.2W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 7450 шт: термін постачання 21-31 дні (днів) |
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DMNH6042SPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 24A PWRDI5060-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 75000 шт: термін постачання 21-31 дні (днів) |
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DMNH6042SPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 24A PWRDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 76005 шт: термін постачання 21-31 дні (днів) |
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DMTH8003SPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 80V 100A PWRDI5060-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V Power Dissipation (Max): 2.9W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 124.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8952 pF @ 40 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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DMTH8003SPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 80V 100A PWRDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V Power Dissipation (Max): 2.9W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 124.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8952 pF @ 40 V |
на замовлення 3554 шт: термін постачання 21-31 дні (днів) |
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DMTH61M8LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 225A PWRDIPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 225A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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DMTH61M8LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 225A PWRDIPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 225A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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DXTN3C60PS-13 | Diodes Incorporated |
Description: TRANS NPN 60V 3A POWERDI5060-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 270mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 140MHz Supplier Device Package: PowerDI5060-8 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2.25 W |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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DXTN3C60PS-13 | Diodes Incorporated |
Description: TRANS NPN 60V 3A POWERDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 270mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 140MHz Supplier Device Package: PowerDI5060-8 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2.25 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMT30M9LPS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V-30V POWERDI506Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V Power Dissipation (Max): 2.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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DMT30M9LPS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V-30V POWERDI506Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V Power Dissipation (Max): 2.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V |
на замовлення 2487 шт: термін постачання 21-31 дні (днів) |
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DMTH41M2SPS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI506Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 225A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V Power Dissipation (Max): 3.4W (Ta), 158W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11085 pF @ 20 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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DMTH41M2SPS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI506Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 225A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V Power Dissipation (Max): 3.4W (Ta), 158W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11085 pF @ 20 V |
на замовлення 7200 шт: термін постачання 21-31 дні (днів) |
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DMWSH120H90SM4Q | Diodes Incorporated |
Description: SICFET N-CH 1200V TO-247Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 97.5mOhm @ 20A, 15V Power Dissipation (Max): 235W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 5mA Supplier Device Package: TO-247-4 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1112 pF @ 1000 V Qualification: AEC-Q101 |
на замовлення 6347 шт: термін постачання 21-31 дні (днів) |
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DMN63D8LW-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 380MA SOT323Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Supplier Device Package: SOT-323 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 30 V |
на замовлення 130000 шт: термін постачання 21-31 дні (днів) |
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3.0SMCJ33A-13 | Diodes Incorporated |
Description: TVS DIODE 33VWM 53.3VC SMCPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 56.3A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: SMC Unidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| AP3190TW6-7 |
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Виробник: Diodes Incorporated
Description: ACDC PSR SWITCHER SOT26 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 0V ~ 28V
Applications: Power Supply Controller
Supplier Device Package: SOT-26
Current - Supply: 450 µA
Description: ACDC PSR SWITCHER SOT26 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 0V ~ 28V
Applications: Power Supply Controller
Supplier Device Package: SOT-26
Current - Supply: 450 µA
на замовлення 2923 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 73.68 грн |
| 10+ | 42.87 грн |
| 25+ | 35.60 грн |
| 100+ | 25.62 грн |
| 250+ | 21.80 грн |
| 500+ | 19.45 грн |
| 1000+ | 17.19 грн |
| AP3190W6-7 |
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Виробник: Diodes Incorporated
Description: ACDC PSR SWITCHER SOT26 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0V ~ 25V
Applications: Power Supply Controller
Supplier Device Package: SOT-26
Current - Supply: 450 µA
Description: ACDC PSR SWITCHER SOT26 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0V ~ 25V
Applications: Power Supply Controller
Supplier Device Package: SOT-26
Current - Supply: 450 µA
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AP3190W6-7 |
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Виробник: Diodes Incorporated
Description: ACDC PSR SWITCHER SOT26 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0V ~ 25V
Applications: Power Supply Controller
Supplier Device Package: SOT-26
Current - Supply: 450 µA
Description: ACDC PSR SWITCHER SOT26 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0V ~ 25V
Applications: Power Supply Controller
Supplier Device Package: SOT-26
Current - Supply: 450 µA
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 73.68 грн |
| 10+ | 42.87 грн |
| 25+ | 35.60 грн |
| 100+ | 25.62 грн |
| 250+ | 21.80 грн |
| 500+ | 19.45 грн |
| 1000+ | 17.19 грн |
| PI7C9X2G404SLBQFDEX |
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Виробник: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 128LQFP
Packaging: Tape & Reel (TR)
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: PCI Express
Applications: Packet Switch, 4-Port/4-Lane
Supplier Device Package: 128-LQFP (14x14)
Description: IC INTERFACE SPECIALIZED 128LQFP
Packaging: Tape & Reel (TR)
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: PCI Express
Applications: Packet Switch, 4-Port/4-Lane
Supplier Device Package: 128-LQFP (14x14)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| PI7C9X2G404EVAQ2ZXAEX |
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Виробник: Diodes Incorporated
Description: PACKET SWITCH V-QFN100100-136 T&
Packaging: Tape & Reel (TR)
Package / Case: 136-VFQFN Dual Rows, Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, PCI Express, SMBus
Voltage - Supply: 0.95V ~ 1.1V
Applications: Packet Switch, 4-Port/4-Lane
Supplier Device Package: 136-aQFN (10x10)
Grade: Automotive
Qualification: AEC-Q100
Description: PACKET SWITCH V-QFN100100-136 T&
Packaging: Tape & Reel (TR)
Package / Case: 136-VFQFN Dual Rows, Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, PCI Express, SMBus
Voltage - Supply: 0.95V ~ 1.1V
Applications: Packet Switch, 4-Port/4-Lane
Supplier Device Package: 136-aQFN (10x10)
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 893.16 грн |
| FJ2450001 |
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Виробник: Diodes Incorporated
Description: XTAL OSC XO 24.5760MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.3V
Height - Seated (Max): 0.039" (1.00mm)
Frequency: 24.576 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 24.5760MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.3V
Height - Seated (Max): 0.039" (1.00mm)
Frequency: 24.576 MHz
Base Resonator: Crystal
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FJ2450003 |
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Виробник: Diodes Incorporated
Description: XTAL OSC XO 24.5760MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Height - Seated (Max): 0.039" (1.00mm)
Frequency: 24.576 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 24.5760MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Height - Seated (Max): 0.039" (1.00mm)
Frequency: 24.576 MHz
Base Resonator: Crystal
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SDM2A40CSP-7B |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2A X3WLB16082
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: Schottky
Capacitance @ Vr, F: 81pF @ 5V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: X3-WLB1608-2
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A X3WLB16082
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: Schottky
Capacitance @ Vr, F: 81pF @ 5V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: X3-WLB1608-2
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 7.60 грн |
| SDM2A40CSP-7B |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2A X3WLB16082
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: Schottky
Capacitance @ Vr, F: 81pF @ 5V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: X3-WLB1608-2
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A X3WLB16082
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: Schottky
Capacitance @ Vr, F: 81pF @ 5V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: X3-WLB1608-2
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
на замовлення 16055 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.76 грн |
| 13+ | 24.00 грн |
| 25+ | 19.93 грн |
| 50+ | 16.32 грн |
| 100+ | 14.29 грн |
| B340LA-13-F-2477 |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 3A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 180pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Description: DIODE SCHOTTKY 40V 3A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 180pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
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| PI6CB332001ZXBIEX-13RA |
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Виробник: Diodes Incorporated
Description: IC CLK BUFFER 1:20 400MHZ 80AQFN
Packaging: Tape & Reel (TR)
Package / Case: 80-VFQFN Dual Rows, Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: HCSL
Type: Clock Buffer
Input: CMOS, HCSL
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:20
Differential - Input:Output: Yes/Yes
Supplier Device Package: 80-aQFN (6x6)
Frequency - Max: 400 MHz
Description: IC CLK BUFFER 1:20 400MHZ 80AQFN
Packaging: Tape & Reel (TR)
Package / Case: 80-VFQFN Dual Rows, Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: HCSL
Type: Clock Buffer
Input: CMOS, HCSL
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:20
Differential - Input:Output: Yes/Yes
Supplier Device Package: 80-aQFN (6x6)
Frequency - Max: 400 MHz
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 493.99 грн |
| PI6CB332001ZXBIEX-13RA |
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Виробник: Diodes Incorporated
Description: IC CLK BUFFER 1:20 400MHZ 80AQFN
Packaging: Cut Tape (CT)
Package / Case: 80-VFQFN Dual Rows, Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: HCSL
Type: Clock Buffer
Input: CMOS, HCSL
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:20
Differential - Input:Output: Yes/Yes
Supplier Device Package: 80-aQFN (6x6)
Frequency - Max: 400 MHz
Description: IC CLK BUFFER 1:20 400MHZ 80AQFN
Packaging: Cut Tape (CT)
Package / Case: 80-VFQFN Dual Rows, Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: HCSL
Type: Clock Buffer
Input: CMOS, HCSL
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:20
Differential - Input:Output: Yes/Yes
Supplier Device Package: 80-aQFN (6x6)
Frequency - Max: 400 MHz
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 904.52 грн |
| 10+ | 786.71 грн |
| 25+ | 750.14 грн |
| 100+ | 611.25 грн |
| 250+ | 583.78 грн |
| 500+ | 532.27 грн |
| 1000+ | 455.99 грн |
| PI6CB332001AZXBIEX-13RA |
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Виробник: Diodes Incorporated
Description: IC CLK BUFFER 1:20 400MHZ 80AQFN
Packaging: Tape & Reel (TR)
Package / Case: 80-VFQFN Dual Rows, Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: HCSL
Type: Clock Buffer
Input: CMOS, HCSL
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:20
Differential - Input:Output: Yes/Yes
Supplier Device Package: 80-aQFN (6x6)
Frequency - Max: 400 MHz
Description: IC CLK BUFFER 1:20 400MHZ 80AQFN
Packaging: Tape & Reel (TR)
Package / Case: 80-VFQFN Dual Rows, Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: HCSL
Type: Clock Buffer
Input: CMOS, HCSL
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:20
Differential - Input:Output: Yes/Yes
Supplier Device Package: 80-aQFN (6x6)
Frequency - Max: 400 MHz
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 493.99 грн |
| PI6CB332001AZXBIEX-13RA |
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Виробник: Diodes Incorporated
Description: IC CLK BUFFER 1:20 400MHZ 80AQFN
Packaging: Cut Tape (CT)
Package / Case: 80-VFQFN Dual Rows, Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: HCSL
Type: Clock Buffer
Input: CMOS, HCSL
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:20
Differential - Input:Output: Yes/Yes
Supplier Device Package: 80-aQFN (6x6)
Frequency - Max: 400 MHz
Description: IC CLK BUFFER 1:20 400MHZ 80AQFN
Packaging: Cut Tape (CT)
Package / Case: 80-VFQFN Dual Rows, Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: HCSL
Type: Clock Buffer
Input: CMOS, HCSL
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:20
Differential - Input:Output: Yes/Yes
Supplier Device Package: 80-aQFN (6x6)
Frequency - Max: 400 MHz
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 904.52 грн |
| 10+ | 786.71 грн |
| 25+ | 750.14 грн |
| 100+ | 611.25 грн |
| 250+ | 583.78 грн |
| 500+ | 532.27 грн |
| 1000+ | 455.99 грн |
| PI3HDX12211AZHEX |
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Виробник: Diodes Incorporated
Description: ACTIVE HDMI V-QFN3590-42 T&R 3.5
Signal Conditioning: Input Equalization
Supplier Device Package: 42-TQFN (9x3.5)
Data Rate (Max): 12Gbps
Applications: HDMI, I2C
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Input: CML
Type: Buffer, ReDriver
Output: CML
Mounting Type: Surface Mount
Number of Channels: 4
Package / Case: 42-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: ACTIVE HDMI V-QFN3590-42 T&R 3.5
Signal Conditioning: Input Equalization
Supplier Device Package: 42-TQFN (9x3.5)
Data Rate (Max): 12Gbps
Applications: HDMI, I2C
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Input: CML
Type: Buffer, ReDriver
Output: CML
Mounting Type: Surface Mount
Number of Channels: 4
Package / Case: 42-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 2300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 210.06 грн |
| 10+ | 151.26 грн |
| 25+ | 138.61 грн |
| 100+ | 117.00 грн |
| 250+ | 110.78 грн |
| 500+ | 107.02 грн |
| 1000+ | 102.23 грн |
| AP3108LGSTR-G1 |
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Виробник: Diodes Incorporated
Description: IC SECONDARY SIDE CTRL 9SSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Voltage - Input: 10V ~ 50V
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 10V ~ 28V
Applications: Secondary-Side Controller
Supplier Device Package: 9-SSOP
Current - Supply: 1.7 mA
DigiKey Programmable: Not Verified
Description: IC SECONDARY SIDE CTRL 9SSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Voltage - Input: 10V ~ 50V
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 10V ~ 28V
Applications: Secondary-Side Controller
Supplier Device Package: 9-SSOP
Current - Supply: 1.7 mA
DigiKey Programmable: Not Verified
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 27.54 грн |
| AP3108LGSTR-G1 |
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Виробник: Diodes Incorporated
Description: IC SECONDARY SIDE CTRL 9SSOP
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Voltage - Input: 10V ~ 50V
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 10V ~ 28V
Applications: Secondary-Side Controller
Supplier Device Package: 9-SSOP
Current - Supply: 1.7 mA
DigiKey Programmable: Not Verified
Description: IC SECONDARY SIDE CTRL 9SSOP
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Voltage - Input: 10V ~ 50V
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 10V ~ 28V
Applications: Secondary-Side Controller
Supplier Device Package: 9-SSOP
Current - Supply: 1.7 mA
DigiKey Programmable: Not Verified
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 64.27 грн |
| 10+ | 55.85 грн |
| 25+ | 53.05 грн |
| 100+ | 40.89 грн |
| 250+ | 38.22 грн |
| 500+ | 33.77 грн |
| 1000+ | 26.23 грн |
| AP2181AFM-7 |
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Виробник: Diodes Incorporated
Description: IC PWR SWITCH P-CHAN 1:1 6UDFN
Features: Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 90mOhm
Input Type: Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: U-DFN2018-6
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, Short Circuit, UVLO
Description: IC PWR SWITCH P-CHAN 1:1 6UDFN
Features: Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 90mOhm
Input Type: Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: U-DFN2018-6
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, Short Circuit, UVLO
товару немає в наявності
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од. на суму грн.
| B340B-13-G |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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од. на суму грн.
| B340B-13-F-2477 |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
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| AH5794-WU-7 |
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Виробник: Diodes Incorporated
Description: IC MOTOR DRIVER ON/OFF TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 500mA
Interface: On/Off
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 6V
Applications: Fan Motor Driver
Technology: Power MOSFET
Voltage - Load: 1.8V ~ 6V
Supplier Device Package: TSOT-26
Motor Type - AC, DC: Brushless DC (BLDC)
Description: IC MOTOR DRIVER ON/OFF TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 500mA
Interface: On/Off
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 6V
Applications: Fan Motor Driver
Technology: Power MOSFET
Voltage - Load: 1.8V ~ 6V
Supplier Device Package: TSOT-26
Motor Type - AC, DC: Brushless DC (BLDC)
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| DMTH10H4M5LPSW |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 107A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 30A, 10V
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4843 pF @ 50 V
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 107A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 30A, 10V
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4843 pF @ 50 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMTH10H4M5LPSW |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 107A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 30A, 10V
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4843 pF @ 50 V
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 107A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 30A, 10V
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4843 pF @ 50 V
на замовлення 1587 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 178.71 грн |
| 10+ | 111.26 грн |
| 100+ | 76.50 грн |
| 500+ | 57.85 грн |
| 1000+ | 53.37 грн |
| SDM2100S1F-7 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 2A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 nA @ 100 V
Description: DIODE SCHOTTKY 100V 2A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 nA @ 100 V
на замовлення 65000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.26 грн |
| 6000+ | 5.94 грн |
| 9000+ | 5.91 грн |
| SDM2100S1F-7 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 2A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 nA @ 100 V
Description: DIODE SCHOTTKY 100V 2A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 nA @ 100 V
на замовлення 65307 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.43 грн |
| 19+ | 16.00 грн |
| 100+ | 13.74 грн |
| 500+ | 9.75 грн |
| 1000+ | 8.00 грн |
| D3Z6V2BF-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 6.2V 400MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 3 V
Description: DIODE ZENER 6.2V 400MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 3 V
на замовлення 99000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.56 грн |
| 6000+ | 2.35 грн |
| 9000+ | 2.24 грн |
| 15000+ | 2.03 грн |
| 21000+ | 1.88 грн |
| 30000+ | 1.82 грн |
| D3Z6V2BF-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 6.2V 400MW SOD323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 3 V
Description: DIODE ZENER 6.2V 400MW SOD323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 3 V
на замовлення 99911 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.76 грн |
| 39+ | 7.77 грн |
| 100+ | 3.77 грн |
| 500+ | 3.43 грн |
| 1000+ | 3.33 грн |
| DDZ2V7ASF-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 2.65V 500MW SOD323F
Tolerance: ±4%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.65 V
Impedance (Max) (Zzt): 110 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 120 µA @ 1 V
Description: DIODE ZENER 2.65V 500MW SOD323F
Tolerance: ±4%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.65 V
Impedance (Max) (Zzt): 110 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 120 µA @ 1 V
на замовлення 120000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.42 грн |
| 6000+ | 2.20 грн |
| 9000+ | 1.88 грн |
| 30000+ | 1.63 грн |
| 75000+ | 1.41 грн |
| DDZ2V7ASF-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 2.65V 500MW SOD323F
Tolerance: ±4%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.65 V
Impedance (Max) (Zzt): 110 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 120 µA @ 1 V
Description: DIODE ZENER 2.65V 500MW SOD323F
Tolerance: ±4%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.65 V
Impedance (Max) (Zzt): 110 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 120 µA @ 1 V
на замовлення 122890 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 14.11 грн |
| 32+ | 9.59 грн |
| 100+ | 5.16 грн |
| 500+ | 3.80 грн |
| 1000+ | 2.64 грн |
| DDZ7V5ASF-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 7.04V 500MW SOD323F
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.04 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 4 V
Description: DIODE ZENER 7.04V 500MW SOD323F
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.04 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 4 V
на замовлення 189000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.17 грн |
| 6000+ | 1.91 грн |
| 9000+ | 1.73 грн |
| 15000+ | 1.42 грн |
| 21000+ | 1.18 грн |
| DDZ7V5ASF-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 7.04V 500MW SOD323F
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.04 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 4 V
Description: DIODE ZENER 7.04V 500MW SOD323F
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.04 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 4 V
на замовлення 191273 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 7.84 грн |
| 56+ | 5.43 грн |
| 117+ | 2.59 грн |
| 500+ | 2.40 грн |
| 1000+ | 2.36 грн |
| DDZ27BSF-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 25.62V 500MW SOD323F
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 25.62 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 23.7 V
Description: DIODE ZENER 25.62V 500MW SOD323F
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 25.62 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 23.7 V
на замовлення 129000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.76 грн |
| 6000+ | 2.47 грн |
| 9000+ | 2.05 грн |
| 30000+ | 1.89 грн |
| 75000+ | 1.70 грн |
| DDZ27BSF-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 25.62V 500MW SOD323F
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 25.62 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 23.7 V
Description: DIODE ZENER 25.62V 500MW SOD323F
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 25.62 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 23.7 V
на замовлення 131800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.46 грн |
| 28+ | 10.87 грн |
| 100+ | 5.30 грн |
| 500+ | 4.15 грн |
| 1000+ | 2.88 грн |
| PI6ULS5V9511BUEX |
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Виробник: Diodes Incorporated
Description: INTERFACE I2C HOT SWAP MSOP-8 T&
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Delay Time: 70ns
Number of Channels: 1
Mounting Type: Surface Mount
Output: 2-Wire Bus
Type: Buffer, Accelerator
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Applications: I2C - Hotswap
Current - Supply: 2.8mA
Data Rate (Max): 400kHz
Supplier Device Package: 8-MSOP
Capacitance - Input: 7 pF
Description: INTERFACE I2C HOT SWAP MSOP-8 T&
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Delay Time: 70ns
Number of Channels: 1
Mounting Type: Surface Mount
Output: 2-Wire Bus
Type: Buffer, Accelerator
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Applications: I2C - Hotswap
Current - Supply: 2.8mA
Data Rate (Max): 400kHz
Supplier Device Package: 8-MSOP
Capacitance - Input: 7 pF
на замовлення 1887 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 72.89 грн |
| 10+ | 50.65 грн |
| 25+ | 45.74 грн |
| 100+ | 37.87 грн |
| 250+ | 35.46 грн |
| 500+ | 34.00 грн |
| 1000+ | 32.62 грн |
| JT3211W0025.000000 |
Виробник: Diodes Incorporated
Description: XTAL OSC TCXO 25.0000MHZ SMD
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Type: TCXO
Frequency: 25 MHz
Base Resonator: Crystal
Description: XTAL OSC TCXO 25.0000MHZ SMD
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Type: TCXO
Frequency: 25 MHz
Base Resonator: Crystal
товару немає в наявності
В кошику
од. на суму грн.
| FD1920010 |
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Виробник: Diodes Incorporated
Description: XTAL OSC XO 19.2000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 19.2 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 19.2000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 19.2 MHz
Base Resonator: Crystal
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BAT54AW-7-F-2477 |
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| TB1500H-13-F |
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Виробник: Diodes Incorporated
Description: THYRISTOR 140V 400A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 120pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 180V
Voltage - Off State: 140V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Description: THYRISTOR 140V 400A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 120pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 180V
Voltage - Off State: 140V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
на замовлення 117000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 31.31 грн |
| TB1500H-13-F |
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Виробник: Diodes Incorporated
Description: THYRISTOR 140V 400A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 120pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 180V
Voltage - Off State: 140V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Description: THYRISTOR 140V 400A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 120pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 180V
Voltage - Off State: 140V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
на замовлення 117000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 125.41 грн |
| 10+ | 76.91 грн |
| 100+ | 51.56 грн |
| 500+ | 38.19 грн |
| 1000+ | 34.91 грн |
| TB1500H-13 |
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Виробник: Diodes Incorporated
Description: THYRISTOR 140V 400A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 120pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 180V
Voltage - Off State: 140V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Description: THYRISTOR 140V 400A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 120pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 180V
Voltage - Off State: 140V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
на замовлення 1337 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 97.19 грн |
| 10+ | 62.87 грн |
| 100+ | 43.95 грн |
| 500+ | 33.29 грн |
| 1000+ | 30.69 грн |
| DMP3007SPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 90A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
Description: MOSFET P-CH 30V 90A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMP3007SPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 90A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
Description: MOSFET P-CH 30V 90A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
на замовлення 2409 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 62.71 грн |
| 10+ | 52.31 грн |
| 100+ | 36.21 грн |
| 500+ | 28.39 грн |
| 1000+ | 24.16 грн |
| DMTH3002LPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 36.73 грн |
| 5000+ | 33.19 грн |
| DMTH3002LPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V
Qualification: AEC-Q101
на замовлення 7450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 90.92 грн |
| 10+ | 70.19 грн |
| 100+ | 49.23 грн |
| 500+ | 39.00 грн |
| 1000+ | 35.71 грн |
| DMNH6042SPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 24A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 24A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Qualification: AEC-Q101
на замовлення 75000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 17.01 грн |
| 5000+ | 15.07 грн |
| 7500+ | 14.41 грн |
| 12500+ | 12.82 грн |
| DMNH6042SPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 24A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 24A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Qualification: AEC-Q101
на замовлення 76005 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.84 грн |
| 10+ | 41.66 грн |
| 100+ | 27.29 грн |
| 500+ | 19.77 грн |
| 1000+ | 17.89 грн |
| DMTH8003SPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.9W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 124.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8952 pF @ 40 V
Description: MOSFET N-CH 80V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.9W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 124.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8952 pF @ 40 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMTH8003SPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.9W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 124.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8952 pF @ 40 V
Description: MOSFET N-CH 80V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.9W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 124.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8952 pF @ 40 V
на замовлення 3554 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 207.71 грн |
| 10+ | 128.99 грн |
| 25+ | 110.05 грн |
| 50+ | 92.27 грн |
| 100+ | 83.00 грн |
| DMTH61M8LPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 225A PWRDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V
Description: MOSFET N-CH 60V 225A PWRDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMTH61M8LPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 225A PWRDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V
Description: MOSFET N-CH 60V 225A PWRDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 230.44 грн |
| 10+ | 144.01 грн |
| 100+ | 99.81 грн |
| 500+ | 75.95 грн |
| 1000+ | 70.25 грн |
| DXTN3C60PS-13 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 60V 3A POWERDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: PowerDI5060-8
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.25 W
Description: TRANS NPN 60V 3A POWERDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: PowerDI5060-8
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.25 W
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DXTN3C60PS-13 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 60V 3A POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: PowerDI5060-8
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.25 W
Description: TRANS NPN 60V 3A POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: PowerDI5060-8
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.25 W
товару немає в наявності
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| DMT30M9LPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V-30V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V
Description: MOSFET BVDSS: 25V-30V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMT30M9LPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V-30V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V
Description: MOSFET BVDSS: 25V-30V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V
на замовлення 2487 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 277.47 грн |
| 10+ | 174.51 грн |
| 25+ | 149.87 грн |
| 50+ | 126.30 грн |
| 100+ | 114.23 грн |
| DMTH41M2SPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.4W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11085 pF @ 20 V
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.4W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11085 pF @ 20 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 83.83 грн |
| DMTH41M2SPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.4W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11085 pF @ 20 V
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.4W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11085 pF @ 20 V
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 193.60 грн |
| 10+ | 155.03 грн |
| 100+ | 123.41 грн |
| 500+ | 98.00 грн |
| 1000+ | 83.15 грн |
| DMWSH120H90SM4Q |
![]() |
Виробник: Diodes Incorporated
Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 20A, 15V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1112 pF @ 1000 V
Qualification: AEC-Q101
Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 20A, 15V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1112 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 6347 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 918.63 грн |
| 30+ | 607.75 грн |
| 120+ | 462.73 грн |
| DMN63D8LW-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 380MA SOT323
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
Description: MOSFET N-CH 30V 380MA SOT323
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
на замовлення 130000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 1.91 грн |
| 20000+ | 1.61 грн |
| 3.0SMCJ33A-13 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 33VWM 53.3VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 56.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Description: TVS DIODE 33VWM 53.3VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 56.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.























