Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74591) > Сторінка 587 з 1244
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PI3VDP3212ZLEX | Diodes Incorporated |
Description: IC DEMULTIPLEXER 2LANE 32TQFNPackaging: Cut Tape (CT) Package / Case: 32-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Video On-State Resistance (Max): 10Ohm (Typ) -3db Bandwidth: 4.7GHz Supplier Device Package: 32-TQFN (3x6) Voltage - Supply, Single (V+): 3.3V Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 1 |
на замовлення 3370 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
PI3VDP3212ZLE+DA | Diodes Incorporated |
Description: IC DEMULTIPLEXER 2LANE 32TQFNPackaging: Tray Package / Case: 32-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Video On-State Resistance (Max): 10Ohm (Typ) -3db Bandwidth: 4.7GHz Supplier Device Package: 32-TQFN (3x6) Voltage - Supply, Single (V+): 3.3V Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
PI3VDP3212ZLE+DAX | Diodes Incorporated |
Description: IC DEMULTIPLEXER 2LANE 32TQFNPackaging: Tape & Reel (TR) Package / Case: 32-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Video On-State Resistance (Max): 10Ohm (Typ) -3db Bandwidth: 4.7GHz Supplier Device Package: 32-TQFN (3x6) Voltage - Supply, Single (V+): 3.3V Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
|
AP7387-30FDC-7 | Diodes Incorporated |
Description: LDO CMOS LowCurr U-DFN2020-6 T&RPackaging: Bulk Package / Case: 6-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 4 µA Voltage - Input (Max): 60V Number of Regulators: 1 Supplier Device Package: U-DFN2020-6 (Type C) Voltage - Output (Min/Fixed): 3V Control Features: Current Limit Voltage Dropout (Max): 1.35V @ 150mA Protection Features: Over Current, Over Temperature, Short Circuit |
на замовлення 26987 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
AP7387-33FDC-7 | Diodes Incorporated |
Description: LDO CMOS LowCurr U-DFN2020-6 T&RPackaging: Bulk Package / Case: 6-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 4 µA Voltage - Input (Max): 60V Number of Regulators: 1 Supplier Device Package: U-DFN2020-6 (Type C) Voltage - Output (Min/Fixed): 3.3V Control Features: Current Limit PSRR: 70dB (1kHz) Voltage Dropout (Max): 1.35V @ 150mA Protection Features: Over Current, Over Temperature, Short Circuit Grade: Automotive Qualification: AEC-Q100 |
на замовлення 94909 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
BZX84C33Q-7-F | Diodes Incorporated |
Description: DIODE ZENER 33V 300MW SOT23Tolerance: ±6.06% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOT-23-3 Grade: Automotive Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 23.1 V Qualification: AEC-Q101 |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
BZX84C33Q-7-F | Diodes Incorporated |
Description: DIODE ZENER 33V 300MW SOT23Packaging: Cut Tape (CT) Tolerance: ±6.06% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOT-23-3 Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 23.1 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
BZX84C33Q-13-F | Diodes Incorporated |
Description: DIODE ZENER 33V 300MW SOT23Packaging: Tape & Reel (TR) Tolerance: ±6.06% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOT-23-3 Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 23.1 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 50000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
AP2280-2FMG-7 | Diodes Incorporated |
Description: IC PWR SWITCH P-CHANNEL 1:1 6DFNPackaging: Tape & Reel (TR) Features: Load Discharge, Slew Rate Controlled Package / Case: 6-UFDFN Exposed Pad Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 80mOhm Input Type: Non-Inverting Voltage - Load: 1.5V ~ 6V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: U-DFN2018-6 |
на замовлення 579000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
AP2280-2FMG-7 | Diodes Incorporated |
Description: IC PWR SWITCH P-CHANNEL 1:1 6DFNPackaging: Cut Tape (CT) Features: Load Discharge, Slew Rate Controlled Package / Case: 6-UFDFN Exposed Pad Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 80mOhm Input Type: Non-Inverting Voltage - Load: 1.5V ~ 6V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: U-DFN2018-6 |
на замовлення 582575 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
B1100-13-F-2477 | Diodes Incorporated |
Description: DIODE SCHOTTKY 100V 1A SMA Packaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
ZTX453STZ | Diodes Incorporated |
Description: TRANS NPN 100V 1A E-LINEPackaging: Cut Tape (CT) Package / Case: E-Line-3, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 15mA, 150mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Frequency - Transition: 150MHz Supplier Device Package: E-Line (TO-92 compatible) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W |
на замовлення 5908 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
ZTX453STZ | Diodes Incorporated |
Description: TRANS NPN 100V 1A E-LINEPackaging: Tape & Box (TB) Package / Case: E-Line-3, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 15mA, 150mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Frequency - Transition: 150MHz Supplier Device Package: E-Line (TO-92 compatible) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
B280AE-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 80V 2A SMAPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 70pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A Current - Reverse Leakage @ Vr: 7 µA @ 80 V |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
B280AE-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 80V 2A SMAPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 70pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A Current - Reverse Leakage @ Vr: 7 µA @ 80 V |
на замовлення 94294 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
74LVC1G08FW4-7 | Diodes Incorporated |
Description: IC GATE AND 1CH 2-INP DFN1010-6Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: X2-DFN1010-6 Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 200 µA |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
74LVC1G08FW4-7 | Diodes Incorporated |
Description: IC GATE AND 1CH 2-INP DFN1010-6Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: X2-DFN1010-6 Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 200 µA |
на замовлення 9955 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
74LVC1G08Z-7 | Diodes Incorporated |
Description: IC GATE AND 1CH 2-INP SOT553Packaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: SOT-553 Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 200 µA |
на замовлення 652000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
74LVC1G08Z-7 | Diodes Incorporated |
Description: IC GATE AND 1CH 2-INP SOT553Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: SOT-553 Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 200 µA |
на замовлення 655382 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
DUP1105SOQ-7 | Diodes Incorporated |
Description: TVS DIODE 24VWM 44VC SOT23 T&RPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Capacitance @ Frequency: 60pF @ 1MHz (Max) Current - Peak Pulse (10/1000µs): 8A Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: SOT-23-3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 25.7V Voltage - Clamping (Max) @ Ipp: 44V Power - Peak Pulse: 350W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
DUP1105SOQ-7 | Diodes Incorporated |
Description: TVS DIODE 24VWM 44VC SOT23 T&RPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Capacitance @ Frequency: 60pF @ 1MHz (Max) Current - Peak Pulse (10/1000µs): 8A Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: SOT-23-3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 25.7V Voltage - Clamping (Max) @ Ipp: 44V Power - Peak Pulse: 350W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
DMTH10H032LPSWQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI50Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 3.4W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
DMTH10H032LPSWQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI50Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 3.4W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
|
DMN2451UFB4Q-7B | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1006-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V Qualification: AEC-Q101 |
на замовлення 70000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
DMN2451UFB4Q-7B | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1006-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V Qualification: AEC-Q101 |
на замовлення 74652 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
DMTH10H032LPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI50Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 3.4W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
DMTH10H032LPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI50Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 3.4W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V |
на замовлення 4806 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
DML3008LFDS-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V V-DFN2020-Packaging: Tape & Reel (TR) Features: Load Discharge, Power Good, Slew Rate Controlled Package / Case: 8-PowerVFDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 7.5mOhm Input Type: Non-Inverting Voltage - Load: 0.5V ~ 20V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Ratio - Input:Output: 1:1 Supplier Device Package: V-DFN2020-8 (Type N) Fault Protection: Over Temperature Grade: Automotive Qualification: AEC-Q100 |
на замовлення 306000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
DML3008LFDS-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V V-DFN2020-Packaging: Cut Tape (CT) Features: Load Discharge, Power Good, Slew Rate Controlled Package / Case: 8-PowerVFDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 7.5mOhm Input Type: Non-Inverting Voltage - Load: 0.5V ~ 20V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Ratio - Input:Output: 1:1 Supplier Device Package: V-DFN2020-8 (Type N) Fault Protection: Over Temperature Grade: Automotive Qualification: AEC-Q100 |
на замовлення 307318 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
DMN2451UFB4Q-7R | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1006-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V Qualification: AEC-Q101 |
на замовлення 228000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
DMN2451UFB4-7B | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V |
на замовлення 560000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
| DML1012LDS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8Packaging: Tape & Reel (TR) Features: Load Discharge Package / Case: 8-PowerVDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 8mOhm (Max) Input Type: Non-Inverting Voltage - Load: 0.8V ~ 4V Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V Current - Output (Max): 6A Ratio - Input:Output: 1:1 Supplier Device Package: V-DFN3030-8 (Type R) Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DML1012LDS-7A | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8Packaging: Tape & Reel (TR) Features: Load Discharge Package / Case: 8-PowerVDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 8mOhm (Max) Input Type: Non-Inverting Voltage - Load: 0.8V ~ 4V Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V Current - Output (Max): 6A Ratio - Input:Output: 1:1 Supplier Device Package: V-DFN3030-8 (Type R) Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DML10M8LDS-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8Packaging: Tape & Reel (TR) Features: Load Discharge Package / Case: 8-PowerVDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 8mOhm (Max) Input Type: Non-Inverting Voltage - Load: 0.8V ~ 4V Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V Current - Output (Max): 6A Ratio - Input:Output: 1:1 Supplier Device Package: V-DFN3030-8 (Type R) Grade: Automotive Qualification: AEC-Q100 |
на замовлення 342000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
|
DMTH10H032SPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V PowerDI50Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 3.2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
DMTH10H032SPSWQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V PowerDI50Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 3.2W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 2391 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
| DMT8008LSS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V-100V SO-8Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.8V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| KBP4T10 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 1KV 4A KBPPackaging: Bulk Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| AP3792S-13 | Diodes Incorporated |
Description: ACDC GEN 4 CONT SO-8 T&R 4K Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
SMBJ58CAQ-13-F | Diodes Incorporated |
Description: TVS DIODE 58VWM 93.6VC SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.4A Voltage - Reverse Standoff (Typ): 58V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 64.4V Voltage - Clamping (Max) @ Ipp: 93.6V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 39000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
SMBJ58CAQ-13-F | Diodes Incorporated |
Description: TVS DIODE 58VWM 93.6VC SMBPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.4A Voltage - Reverse Standoff (Typ): 58V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 64.4V Voltage - Clamping (Max) @ Ipp: 93.6V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 39975 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
| SBR10100CTL-13-2084 | Diodes Incorporated |
Description: DIODE ARR SBR 100V 5A TO252-3 Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-252-3 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A Current - Reverse Leakage @ Vr: 200 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
|
DESD2FLEX2SOQ-7 | Diodes Incorporated |
Description: TVS DIODE 24VWM 41VC SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Capacitance @ Frequency: 25pF @ 5MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: SOT-23-3 Bidirectional Channels: 2 Voltage - Breakdown (Min): 25.4V Voltage - Clamping (Max) @ Ipp: 41V Power - Peak Pulse: 230W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
DESD2FLEX2SOQ-7 | Diodes Incorporated |
Description: TVS DIODE 24VWM 41VC SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Capacitance @ Frequency: 25pF @ 5MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: SOT-23-3 Bidirectional Channels: 2 Voltage - Breakdown (Min): 25.4V Voltage - Clamping (Max) @ Ipp: 41V Power - Peak Pulse: 230W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 16899 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
| DMP3036SFVQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V PowerDI333Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DMP3036SFVQ-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V PowerDI333Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
|
|
BZX84B33Q-7-F | Diodes Incorporated |
Description: TIGHT TOLERANCE ZENER DIODE SOT2Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOT-23-3 Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 23.1 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 63000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
SBR20A60CTFP | Diodes Incorporated |
Description: DIODE ARRAY SBR 60V 10A ITO220ABPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: ITO-220AB Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
D30V0S1UG3LP20-7 | Diodes Incorporated |
Description: TVS DIODE 30VWM 31V UDFN20203Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: USB Capacitance @ Frequency: 500pF @ 1MHz Current - Peak Pulse (10/1000µs): 180A (8/20µs) Voltage - Reverse Standoff (Typ): 30V (Max) Supplier Device Package: U-DFN2020-3 (Type C) Unidirectional Channels: 1 Voltage - Breakdown (Min): 30.5V Voltage - Clamping (Max) @ Ipp: 31V (Typ) Power - Peak Pulse: 5580W (5.58kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
D30V0S1UG3LP20-7 | Diodes Incorporated |
Description: TVS DIODE 30VWM 31V UDFN20203Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: USB Capacitance @ Frequency: 500pF @ 1MHz Current - Peak Pulse (10/1000µs): 180A (8/20µs) Voltage - Reverse Standoff (Typ): 30V (Max) Supplier Device Package: U-DFN2020-3 (Type C) Unidirectional Channels: 1 Voltage - Breakdown (Min): 30.5V Voltage - Clamping (Max) @ Ipp: 31V (Typ) Power - Peak Pulse: 5580W (5.58kW) Power Line Protection: No |
на замовлення 218 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
FMMT411FDBWQ-7 | Diodes Incorporated |
Description: TRANS NPN 15V 5A W-DFN2020-3Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN - Avalanche Mode Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Frequency - Transition: 110MHz Supplier Device Package: W-DFN2020-3 (Type A) Grade: Automotive Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 820 mW Qualification: AEC-Q101 |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
FMMT411FDBWQ-7 | Diodes Incorporated |
Description: TRANS NPN 15V 5A W-DFN2020-3Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN - Avalanche Mode Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Frequency - Transition: 110MHz Supplier Device Package: W-DFN2020-3 (Type A) Grade: Automotive Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 820 mW Qualification: AEC-Q101 |
на замовлення 35601 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
FMMT411TD | Diodes Incorporated |
Description: TRANS NPN 15V 0.9A SOT-23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Avalanche Mode Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Frequency - Transition: 40MHz Supplier Device Package: SOT-23 (Type DN) Current - Collector (Ic) (Max): 900 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 730 mW |
на замовлення 16741 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
FMMT411QTA | Diodes Incorporated |
Description: TRANS NPN 15V 0.9A SOT-23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Avalanche Mode Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Frequency - Transition: 40MHz Supplier Device Package: SOT-23 (Type DN) Grade: Automotive Current - Collector (Ic) (Max): 900 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 800 mW Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
FH4800014 | Diodes Incorporated |
Description: CRYSTAL 48.0000MHZ 10PF SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 10pF Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -30°C ~ 85°C Frequency Stability: ±10ppm Frequency Tolerance: ±10ppm Operating Mode: Fundamental Height - Seated (Max): 0.028" (0.70mm) ESR (Equivalent Series Resistance): 60 Ohms Frequency: 48 MHz |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
FH4800014 | Diodes Incorporated |
Description: CRYSTAL 48.0000MHZ 10PF SMDPackaging: Cut Tape (CT) Package / Case: 4-SMD, No Lead Load Capacitance: 10pF Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -30°C ~ 85°C Frequency Stability: ±10ppm Frequency Tolerance: ±10ppm Operating Mode: Fundamental Height - Seated (Max): 0.028" (0.70mm) ESR (Equivalent Series Resistance): 60 Ohms Frequency: 48 MHz |
на замовлення 5019 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
BZT585B16T-7 | Diodes Incorporated |
Description: DIODE ZENER 16V 350MW SOD523Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-523 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V |
на замовлення 673375 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
| AP7351D-25FS4-7B | Diodes Incorporated |
Description: LDO CMOS LOWCURR X2-DFN1010-4 (TPackaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 1 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: X2-DFN1010-4 (Type B) Voltage - Output (Min/Fixed): 2.5V Control Features: Current Limit, Enable PSRR: 60dB (1kHz) Voltage Dropout (Max): 0.48V @ 150mA Protection Features: Over Current |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
|
AP5724FDCG-7 | Diodes Incorporated |
Description: IC LED DRVR RGLTR PWM 750MA 6DFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1.2MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 750mA (Switch) Internal Switch(s): Yes Topology: Step-Up (Boost) Supplier Device Package: U-DFN2020-6 (Type C) Dimming: PWM Voltage - Supply (Min): 2.7V Voltage - Supply (Max): 5.5V |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
AP5724FDCG-7 | Diodes Incorporated |
Description: IC LED DRVR RGLTR PWM 750MA 6DFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1.2MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 750mA (Switch) Internal Switch(s): Yes Topology: Step-Up (Boost) Supplier Device Package: U-DFN2020-6 (Type C) Dimming: PWM Voltage - Supply (Min): 2.7V Voltage - Supply (Max): 5.5V |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
|
| PI3VDP3212ZLEX |
![]() |
Виробник: Diodes Incorporated
Description: IC DEMULTIPLEXER 2LANE 32TQFN
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm (Typ)
-3db Bandwidth: 4.7GHz
Supplier Device Package: 32-TQFN (3x6)
Voltage - Supply, Single (V+): 3.3V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 1
Description: IC DEMULTIPLEXER 2LANE 32TQFN
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm (Typ)
-3db Bandwidth: 4.7GHz
Supplier Device Package: 32-TQFN (3x6)
Voltage - Supply, Single (V+): 3.3V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 1
на замовлення 3370 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 237.61 грн |
| 10+ | 205.21 грн |
| 25+ | 194.03 грн |
| 100+ | 157.82 грн |
| 250+ | 149.73 грн |
| 500+ | 134.35 грн |
| 1000+ | 111.45 грн |
| PI3VDP3212ZLE+DA |
![]() |
Виробник: Diodes Incorporated
Description: IC DEMULTIPLEXER 2LANE 32TQFN
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm (Typ)
-3db Bandwidth: 4.7GHz
Supplier Device Package: 32-TQFN (3x6)
Voltage - Supply, Single (V+): 3.3V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 1
Description: IC DEMULTIPLEXER 2LANE 32TQFN
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm (Typ)
-3db Bandwidth: 4.7GHz
Supplier Device Package: 32-TQFN (3x6)
Voltage - Supply, Single (V+): 3.3V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| PI3VDP3212ZLE+DAX |
![]() |
Виробник: Diodes Incorporated
Description: IC DEMULTIPLEXER 2LANE 32TQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm (Typ)
-3db Bandwidth: 4.7GHz
Supplier Device Package: 32-TQFN (3x6)
Voltage - Supply, Single (V+): 3.3V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 1
Description: IC DEMULTIPLEXER 2LANE 32TQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm (Typ)
-3db Bandwidth: 4.7GHz
Supplier Device Package: 32-TQFN (3x6)
Voltage - Supply, Single (V+): 3.3V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| AP7387-30FDC-7 |
![]() |
Виробник: Diodes Incorporated
Description: LDO CMOS LowCurr U-DFN2020-6 T&R
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: U-DFN2020-6 (Type C)
Voltage - Output (Min/Fixed): 3V
Control Features: Current Limit
Voltage Dropout (Max): 1.35V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Description: LDO CMOS LowCurr U-DFN2020-6 T&R
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: U-DFN2020-6 (Type C)
Voltage - Output (Min/Fixed): 3V
Control Features: Current Limit
Voltage Dropout (Max): 1.35V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
на замовлення 26987 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 44.40 грн |
| 10+ | 37.45 грн |
| 25+ | 35.18 грн |
| 100+ | 26.96 грн |
| 250+ | 25.04 грн |
| 500+ | 21.31 грн |
| 1000+ | 16.77 грн |
| 2500+ | 15.20 грн |
| 5000+ | 14.15 грн |
| AP7387-33FDC-7 |
![]() |
Виробник: Diodes Incorporated
Description: LDO CMOS LowCurr U-DFN2020-6 T&R
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: U-DFN2020-6 (Type C)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.35V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
Description: LDO CMOS LowCurr U-DFN2020-6 T&R
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: U-DFN2020-6 (Type C)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.35V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
на замовлення 94909 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.57 грн |
| 10+ | 36.58 грн |
| 25+ | 34.33 грн |
| 100+ | 26.29 грн |
| 250+ | 24.42 грн |
| 500+ | 20.78 грн |
| 1000+ | 16.35 грн |
| 3000+ | 14.82 грн |
| 6000+ | 13.80 грн |
| BZX84C33Q-7-F |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 33V 300MW SOT23
Tolerance: ±6.06%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23.1 V
Qualification: AEC-Q101
Description: DIODE ZENER 33V 300MW SOT23
Tolerance: ±6.06%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23.1 V
Qualification: AEC-Q101
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.44 грн |
| 6000+ | 1.31 грн |
| 9000+ | 1.28 грн |
| BZX84C33Q-7-F |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 33V 300MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±6.06%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23.1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 33V 300MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±6.06%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23.1 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 8.22 грн |
| 57+ | 5.62 грн |
| 121+ | 2.63 грн |
| 500+ | 2.43 грн |
| 1000+ | 2.40 грн |
| BZX84C33Q-13-F |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 33V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±6.06%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23.1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 33V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±6.06%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23.1 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.10 грн |
| 20000+ | 1.83 грн |
| 30000+ | 1.73 грн |
| 50000+ | 1.51 грн |
| AP2280-2FMG-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC PWR SWITCH P-CHANNEL 1:1 6DFN
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 6-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: U-DFN2018-6
Description: IC PWR SWITCH P-CHANNEL 1:1 6DFN
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 6-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: U-DFN2018-6
на замовлення 579000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 17.18 грн |
| AP2280-2FMG-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC PWR SWITCH P-CHANNEL 1:1 6DFN
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 6-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: U-DFN2018-6
Description: IC PWR SWITCH P-CHANNEL 1:1 6DFN
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 6-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: U-DFN2018-6
на замовлення 582575 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 88.79 грн |
| 10+ | 52.17 грн |
| 25+ | 43.35 грн |
| 100+ | 31.37 грн |
| 250+ | 26.79 грн |
| 500+ | 23.97 грн |
| 1000+ | 21.25 грн |
| B1100-13-F-2477 |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 1A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 1A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| ZTX453STZ |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 100V 1A E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Description: TRANS NPN 100V 1A E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
на замовлення 5908 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.55 грн |
| 10+ | 37.37 грн |
| 100+ | 25.60 грн |
| 500+ | 19.02 грн |
| 1000+ | 17.37 грн |
| ZTX453STZ |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 100V 1A E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Description: TRANS NPN 100V 1A E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 17.67 грн |
| 4000+ | 15.75 грн |
| 6000+ | 15.10 грн |
| B280AE-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 80V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 7 µA @ 80 V
Description: DIODE SCHOTTKY 80V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 7 µA @ 80 V
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 6.68 грн |
| 10000+ | 4.75 грн |
| 50000+ | 4.64 грн |
| B280AE-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 80V 2A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 7 µA @ 80 V
Description: DIODE SCHOTTKY 80V 2A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 7 µA @ 80 V
на замовлення 94294 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 23.02 грн |
| 22+ | 14.81 грн |
| 100+ | 10.21 грн |
| 500+ | 7.85 грн |
| 1000+ | 6.81 грн |
| 2000+ | 6.60 грн |
| 74LVC1G08FW4-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE AND 1CH 2-INP DFN1010-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1010-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
Description: IC GATE AND 1CH 2-INP DFN1010-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1010-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 9.04 грн |
| 74LVC1G08FW4-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE AND 1CH 2-INP DFN1010-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1010-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
Description: IC GATE AND 1CH 2-INP DFN1010-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1010-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
на замовлення 9955 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 46.86 грн |
| 12+ | 27.08 грн |
| 25+ | 22.29 грн |
| 100+ | 15.80 грн |
| 250+ | 13.28 грн |
| 500+ | 11.73 грн |
| 1000+ | 10.26 грн |
| 2500+ | 8.88 грн |
| 74LVC1G08Z-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE AND 1CH 2-INP SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
Description: IC GATE AND 1CH 2-INP SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
на замовлення 652000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 7.07 грн |
| 8000+ | 6.16 грн |
| 12000+ | 5.83 грн |
| 20000+ | 5.12 грн |
| 28000+ | 4.92 грн |
| 40000+ | 4.72 грн |
| 100000+ | 4.26 грн |
| 74LVC1G08Z-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE AND 1CH 2-INP SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
Description: IC GATE AND 1CH 2-INP SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
на замовлення 655382 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.00 грн |
| 15+ | 21.22 грн |
| 25+ | 17.45 грн |
| 100+ | 12.27 грн |
| 250+ | 10.26 грн |
| 500+ | 9.02 грн |
| 1000+ | 7.85 грн |
| DUP1105SOQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 24VWM 44VC SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 60pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 44VC SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 60pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.18 грн |
| 6000+ | 6.76 грн |
| 9000+ | 5.99 грн |
| 30000+ | 5.55 грн |
| DUP1105SOQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 24VWM 44VC SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 60pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 44VC SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 60pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.89 грн |
| 15+ | 22.17 грн |
| 100+ | 11.20 грн |
| 500+ | 9.32 грн |
| 1000+ | 7.25 грн |
| DMTH10H032LPSWQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DMTH10H032LPSWQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DMN2451UFB4Q-7B |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Qualification: AEC-Q101
на замовлення 70000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.60 грн |
| 20000+ | 2.22 грн |
| 30000+ | 2.15 грн |
| 50000+ | 1.90 грн |
| 70000+ | 1.74 грн |
| DMN2451UFB4Q-7B |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Qualification: AEC-Q101
на замовлення 74652 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.44 грн |
| 34+ | 9.42 грн |
| 100+ | 5.84 грн |
| 500+ | 4.01 грн |
| 1000+ | 3.48 грн |
| 2000+ | 3.13 грн |
| 5000+ | 2.65 грн |
| DMTH10H032LPSW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 16.69 грн |
| DMTH10H032LPSW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
на замовлення 4806 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 69.06 грн |
| 10+ | 41.33 грн |
| 100+ | 26.90 грн |
| 500+ | 19.44 грн |
| 1000+ | 17.57 грн |
| DML3008LFDS-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V V-DFN2020-
Packaging: Tape & Reel (TR)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-PowerVFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 7.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN2020-8 (Type N)
Fault Protection: Over Temperature
Grade: Automotive
Qualification: AEC-Q100
Description: MOSFET BVDSS: 25V~30V V-DFN2020-
Packaging: Tape & Reel (TR)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-PowerVFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 7.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN2020-8 (Type N)
Fault Protection: Over Temperature
Grade: Automotive
Qualification: AEC-Q100
на замовлення 306000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 50.41 грн |
| 6000+ | 47.49 грн |
| 9000+ | 46.97 грн |
| DML3008LFDS-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V V-DFN2020-
Packaging: Cut Tape (CT)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-PowerVFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 7.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN2020-8 (Type N)
Fault Protection: Over Temperature
Grade: Automotive
Qualification: AEC-Q100
Description: MOSFET BVDSS: 25V~30V V-DFN2020-
Packaging: Cut Tape (CT)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-PowerVFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 7.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN2020-8 (Type N)
Fault Protection: Over Temperature
Grade: Automotive
Qualification: AEC-Q100
на замовлення 307318 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 102.77 грн |
| 10+ | 72.20 грн |
| 25+ | 65.46 грн |
| 100+ | 54.51 грн |
| 250+ | 51.21 грн |
| 500+ | 49.22 грн |
| 1000+ | 46.80 грн |
| DMN2451UFB4Q-7R |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Qualification: AEC-Q101
на замовлення 228000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.10 грн |
| 6000+ | 2.64 грн |
| 9000+ | 2.22 грн |
| 15000+ | 2.06 грн |
| 21000+ | 2.05 грн |
| 30000+ | 1.94 грн |
| 75000+ | 1.77 грн |
| 150000+ | 1.76 грн |
| DMN2451UFB4-7B |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
на замовлення 560000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 3.46 грн |
| 20000+ | 2.71 грн |
| 30000+ | 2.61 грн |
| 50000+ | 2.36 грн |
| 70000+ | 2.27 грн |
| DML1012LDS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 4V
Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Grade: Automotive
Qualification: AEC-Q100
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 4V
Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| DML1012LDS-7A |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 4V
Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Grade: Automotive
Qualification: AEC-Q100
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 4V
Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| DML10M8LDS-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 4V
Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Grade: Automotive
Qualification: AEC-Q100
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 4V
Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Grade: Automotive
Qualification: AEC-Q100
на замовлення 342000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 15.46 грн |
| 6000+ | 14.49 грн |
| 9000+ | 14.29 грн |
| 15000+ | 13.20 грн |
| 21000+ | 13.08 грн |
| 30000+ | 12.96 грн |
| DMTH10H032SPSW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V PowerDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
Description: MOSFET BVDSS: 61V~100V PowerDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 17.82 грн |
| DMTH10H032SPSWQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V PowerDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 61V~100V PowerDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
Qualification: AEC-Q101
на замовлення 2391 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 78.11 грн |
| 10+ | 46.63 грн |
| 100+ | 30.62 грн |
| 500+ | 22.25 грн |
| 1000+ | 20.17 грн |
| DMT8008LSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V-100V SO-8
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 40 V
Description: MOSFET BVDSS: 61V-100V SO-8
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
| KBP4T10 |
![]() |
Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 4A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 4A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
| SMBJ58CAQ-13-F |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 58VWM 93.6VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 58VWM 93.6VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 8.06 грн |
| 6000+ | 7.75 грн |
| SMBJ58CAQ-13-F |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 58VWM 93.6VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 58VWM 93.6VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 39975 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.24 грн |
| 15+ | 22.09 грн |
| 100+ | 14.98 грн |
| 500+ | 11.02 грн |
| 1000+ | 9.69 грн |
| SBR10100CTL-13-2084 |
Виробник: Diodes Incorporated
Description: DIODE ARR SBR 100V 5A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Description: DIODE ARR SBR 100V 5A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| DESD2FLEX2SOQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 24VWM 41VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 25pF @ 5MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 25.4V
Voltage - Clamping (Max) @ Ipp: 41V
Power - Peak Pulse: 230W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 41VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 25pF @ 5MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 25.4V
Voltage - Clamping (Max) @ Ipp: 41V
Power - Peak Pulse: 230W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.71 грн |
| 6000+ | 7.27 грн |
| 9000+ | 6.65 грн |
| 15000+ | 6.09 грн |
| DESD2FLEX2SOQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 24VWM 41VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 25pF @ 5MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 25.4V
Voltage - Clamping (Max) @ Ipp: 41V
Power - Peak Pulse: 230W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 41VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 25pF @ 5MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 25.4V
Voltage - Clamping (Max) @ Ipp: 41V
Power - Peak Pulse: 230W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 16899 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.42 грн |
| 17+ | 19.24 грн |
| 100+ | 13.02 грн |
| 500+ | 9.56 грн |
| 1000+ | 8.42 грн |
| DMP3036SFVQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V PowerDI333
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 25V~30V PowerDI333
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DMP3036SFVQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V PowerDI333
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 25V~30V PowerDI333
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 15.68 грн |
| BZX84B33Q-7-F |
![]() |
Виробник: Diodes Incorporated
Description: TIGHT TOLERANCE ZENER DIODE SOT2
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23.1 V
Grade: Automotive
Qualification: AEC-Q101
Description: TIGHT TOLERANCE ZENER DIODE SOT2
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23.1 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 63000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.76 грн |
| 6000+ | 2.46 грн |
| 9000+ | 2.04 грн |
| 30000+ | 1.88 грн |
| SBR20A60CTFP |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ARRAY SBR 60V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: DIODE ARRAY SBR 60V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 101.95 грн |
| 50+ | 47.14 грн |
| D30V0S1UG3LP20-7 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 30VWM 31V UDFN20203
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 500pF @ 1MHz
Current - Peak Pulse (10/1000µs): 180A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V (Max)
Supplier Device Package: U-DFN2020-3 (Type C)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 30.5V
Voltage - Clamping (Max) @ Ipp: 31V (Typ)
Power - Peak Pulse: 5580W (5.58kW)
Power Line Protection: No
Description: TVS DIODE 30VWM 31V UDFN20203
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 500pF @ 1MHz
Current - Peak Pulse (10/1000µs): 180A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V (Max)
Supplier Device Package: U-DFN2020-3 (Type C)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 30.5V
Voltage - Clamping (Max) @ Ipp: 31V (Typ)
Power - Peak Pulse: 5580W (5.58kW)
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| D30V0S1UG3LP20-7 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 30VWM 31V UDFN20203
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 500pF @ 1MHz
Current - Peak Pulse (10/1000µs): 180A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V (Max)
Supplier Device Package: U-DFN2020-3 (Type C)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 30.5V
Voltage - Clamping (Max) @ Ipp: 31V (Typ)
Power - Peak Pulse: 5580W (5.58kW)
Power Line Protection: No
Description: TVS DIODE 30VWM 31V UDFN20203
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 500pF @ 1MHz
Current - Peak Pulse (10/1000µs): 180A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V (Max)
Supplier Device Package: U-DFN2020-3 (Type C)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 30.5V
Voltage - Clamping (Max) @ Ipp: 31V (Typ)
Power - Peak Pulse: 5580W (5.58kW)
Power Line Protection: No
на замовлення 218 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.78 грн |
| 17+ | 18.76 грн |
| 100+ | 12.68 грн |
| FMMT411FDBWQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 15V 5A W-DFN2020-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 110MHz
Supplier Device Package: W-DFN2020-3 (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 820 mW
Qualification: AEC-Q101
Description: TRANS NPN 15V 5A W-DFN2020-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 110MHz
Supplier Device Package: W-DFN2020-3 (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 820 mW
Qualification: AEC-Q101
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 117.58 грн |
| FMMT411FDBWQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 15V 5A W-DFN2020-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 110MHz
Supplier Device Package: W-DFN2020-3 (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 820 mW
Qualification: AEC-Q101
Description: TRANS NPN 15V 5A W-DFN2020-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 110MHz
Supplier Device Package: W-DFN2020-3 (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 820 mW
Qualification: AEC-Q101
на замовлення 35601 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 337.91 грн |
| 10+ | 214.63 грн |
| 100+ | 151.53 грн |
| 500+ | 116.94 грн |
| 1000+ | 108.83 грн |
| FMMT411TD |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 15V 0.9A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-23 (Type DN)
Current - Collector (Ic) (Max): 900 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 730 mW
Description: TRANS NPN 15V 0.9A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-23 (Type DN)
Current - Collector (Ic) (Max): 900 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 730 mW
на замовлення 16741 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 271.31 грн |
| 10+ | 171.17 грн |
| 100+ | 119.92 грн |
| FMMT411QTA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 15V 0.9A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-23 (Type DN)
Grade: Automotive
Current - Collector (Ic) (Max): 900 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 800 mW
Qualification: AEC-Q101
Description: TRANS NPN 15V 0.9A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-23 (Type DN)
Grade: Automotive
Current - Collector (Ic) (Max): 900 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 800 mW
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| FH4800014 |
![]() |
Виробник: Diodes Incorporated
Description: CRYSTAL 48.0000MHZ 10PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 48 MHz
Description: CRYSTAL 48.0000MHZ 10PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 48 MHz
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 36.47 грн |
| FH4800014 |
![]() |
Виробник: Diodes Incorporated
Description: CRYSTAL 48.0000MHZ 10PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 48 MHz
Description: CRYSTAL 48.0000MHZ 10PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 48 MHz
на замовлення 5019 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 65.77 грн |
| 10+ | 55.66 грн |
| 50+ | 52.06 грн |
| 100+ | 43.18 грн |
| 500+ | 40.91 грн |
| 1000+ | 34.09 грн |
| BZT585B16T-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 16V 350MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Description: DIODE ZENER 16V 350MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
на замовлення 673375 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 9.87 грн |
| 47+ | 6.81 грн |
| 100+ | 3.41 грн |
| 500+ | 3.09 грн |
| 1000+ | 2.99 грн |
| AP7351D-25FS4-7B |
![]() |
Виробник: Diodes Incorporated
Description: LDO CMOS LOWCURR X2-DFN1010-4 (T
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4 (Type B)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Current Limit, Enable
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.48V @ 150mA
Protection Features: Over Current
Description: LDO CMOS LOWCURR X2-DFN1010-4 (T
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4 (Type B)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Current Limit, Enable
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.48V @ 150mA
Protection Features: Over Current
товару немає в наявності
В кошику
од. на суму грн.
| AP5724FDCG-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC LED DRVR RGLTR PWM 750MA 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: U-DFN2020-6 (Type C)
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
Description: IC LED DRVR RGLTR PWM 750MA 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: U-DFN2020-6 (Type C)
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 15.50 грн |
| AP5724FDCG-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC LED DRVR RGLTR PWM 750MA 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: U-DFN2020-6 (Type C)
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
Description: IC LED DRVR RGLTR PWM 750MA 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: U-DFN2020-6 (Type C)
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 83.86 грн |
| 10+ | 48.93 грн |
| 25+ | 40.66 грн |
| 100+ | 29.30 грн |
| 250+ | 24.96 грн |
| 500+ | 22.29 грн |
| 1000+ | 19.72 грн |




,TO-226_straightlead.jpg)








