Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74576) > Сторінка 588 з 1243
| Фото | Назва | Виробник | Інформація |
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DMC6040SSDQ-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 60V 5.1A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.24W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V, 1030pF @ 30V Rds On (Max) @ Id, Vgs: 40mOhm @ 8A, 10V, 110mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 19.4nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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DMC6040SSDQ-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 60V 5.1A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.24W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V, 1030pF @ 30V Rds On (Max) @ Id, Vgs: 40mOhm @ 8A, 10V, 110mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 19.4nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2264 шт: термін постачання 21-31 дні (днів) |
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B370CE-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 70V 3A SMCPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 105pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 70 V |
товару немає в наявності |
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B390CE-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 90V 3A SMCPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 105pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 90 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DMC2991UDJ-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 0.5A SOT963Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 380mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V, 17pF @ 16V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-963 |
на замовлення 510000 шт: термін постачання 21-31 дні (днів) |
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DMC2991UDJ-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 0.5A SOT963Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 380mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V, 17pF @ 16V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-963 |
на замовлення 519695 шт: термін постачання 21-31 дні (днів) |
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DMC2710UDW-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 0.75A SOT363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 290mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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DMC2710UDW-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 0.75A SOT363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 290mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 |
на замовлення 6126 шт: термін постачання 21-31 дні (днів) |
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DMC2710UDWQ-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 0.75A SOT363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 290mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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DMC2710UDWQ-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 0.75A SOT363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 290mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9428 шт: термін постачання 21-31 дні (днів) |
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DMC2710UV-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 1.1A SOT563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 460mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 |
на замовлення 87000 шт: термін постачання 21-31 дні (днів) |
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DMC2710UV-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 1.1A SOT563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 460mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 |
на замовлення 90526 шт: термін постачання 21-31 дні (днів) |
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DMG6602SVTX-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 3.4A TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 840mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V, 420pF @ 15V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 9nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DMG6602SVTX-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 3.4A TSOT26Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 840mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V, 420pF @ 15V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 9nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3463 шт: термін постачання 21-31 дні (днів) |
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DMC3071LVT-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 4.6A TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TSOT-26 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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DMC3071LVT-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 4.6A TSOT26Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TSOT-26 |
на замовлення 16490 шт: термін постачання 21-31 дні (днів) |
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DMC3730UVT-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 25V 0.68A TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 680mA (Ta), 460mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 63pF @ 10V Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.64nC @ 4.5V, 1.1nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 186000 шт: термін постачання 21-31 дні (днів) |
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DMC3730UVT-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 25V 0.68A TSOT26Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 680mA (Ta), 460mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 63pF @ 10V Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.64nC @ 4.5V, 1.1nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 188935 шт: термін постачання 21-31 дні (днів) |
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DMC2991UDA-7B | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 0.48A 6DFNPackaging: Bulk Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 350mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 16V, 17pF @ 15V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0806-6 |
на замовлення 2318457 шт: термін постачання 21-31 дні (днів) |
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DMC3016LDV-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 21A PWRDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Tc), 15A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 10V, 25mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DMC3016LDV-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 21A PWRDI3333Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Tc), 15A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 10V, 25mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2636 шт: термін постачання 21-31 дні (днів) |
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AP7368D-30RS4-7 | Diodes Incorporated |
Description: LDO CMOS HiCurr X1-DFN1612-8 T&RPackaging: Bulk Package / Case: 8-XFDFN Exposed Pad Voltage - Output: 3V Mounting Type: Surface Mount Number of Outputs: 1 Voltage - Input: 5.5V Operating Temperature: -40°C ~ 85°C (TA) Applications: LDO, Cameras, Wireless Devices Supplier Device Package: X1-DFN1612-8 (Type B) |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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AP7368D-09RS4-7 | Diodes Incorporated |
Description: LDO CMOS HiCurr X1-DFN1612-8 T&RPackaging: Bulk Package / Case: 8-XFDFN Exposed Pad Voltage - Output: 0.9V Mounting Type: Surface Mount Number of Outputs: 1 Voltage - Input: 5.5V Operating Temperature: -40°C ~ 85°C (TA) Applications: LDO, Cameras, Wireless Devices Supplier Device Package: X1-DFN1612-8 (Type B) |
на замовлення 35000 шт: термін постачання 21-31 дні (днів) |
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AP7368D-33RS4-7 | Diodes Incorporated |
Description: LDO CMOS HiCurr X1-DFN1612-8 T&RPackaging: Bulk Package / Case: 8-XFDFN Exposed Pad Voltage - Output: 3.3V Mounting Type: Surface Mount Number of Outputs: 1 Voltage - Input: 5.5V Operating Temperature: -40°C ~ 85°C (TA) Applications: LDO, Cameras, Wireless Devices Supplier Device Package: X1-DFN1612-8 (Type B) |
на замовлення 29975 шт: термін постачання 21-31 дні (днів) |
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| PSMUX154ZMEX | Diodes Incorporated |
Description: IC SWITCH SPDT X 2 6.5OHM 10UQFNPackaging: Cut Tape (CT) Package / Case: 10-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 6.5Ohm -3db Bandwidth: 850MHz Supplier Device Package: 10-UQFN (1.8x1.4) Voltage - Supply, Single (V+): 1.8V ~ 4.3V Crosstalk: -90dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 100mOhm Switch Time (Ton, Toff) (Max): 25ns, 4ns (Typ) Channel Capacitance (CS(off), CD(off)): 6pF, 1.9pF Current - Leakage (IS(off)) (Max): 2µA Number of Circuits: 2 |
на замовлення 2973 шт: термін постачання 21-31 дні (днів) |
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APX803L05-29SA-7 | Diodes Incorporated |
Description: IC SUPERVISOR 1 CHANNEL SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 35ms Minimum Voltage - Threshold: 2.9V Supplier Device Package: SOT-23-3 DigiKey Programmable: Not Verified |
на замовлення 39000 шт: термін постачання 21-31 дні (днів) |
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APX803L05-29SA-7 | Diodes Incorporated |
Description: IC SUPERVISOR 1 CHANNEL SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 35ms Minimum Voltage - Threshold: 2.9V Supplier Device Package: SOT-23-3 DigiKey Programmable: Not Verified |
на замовлення 41965 шт: термін постачання 21-31 дні (днів) |
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MMBZ5245BQ-7-F | Diodes Incorporated |
Description: ZENER DIODE SOT23 T&R 3K Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: SOT-23-3 Grade: Automotive Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 11 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMBZ5245BQ-7-F | Diodes Incorporated |
Description: ZENER DIODE SOT23 T&R 3K Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: SOT-23-3 Grade: Automotive Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 11 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SBR30A45CTB-13 | Diodes Incorporated |
Description: DIODE ARRAY SBR 45V 15A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A Current - Reverse Leakage @ Vr: 500 µA @ 45 V Qualification: AEC-Q101 |
на замовлення 6400 шт: термін постачання 21-31 дні (днів) |
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SBR30A45CTB-13 | Diodes Incorporated |
Description: DIODE ARRAY SBR 45V 15A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A Current - Reverse Leakage @ Vr: 500 µA @ 45 V Qualification: AEC-Q101 |
на замовлення 6922 шт: термін постачання 21-31 дні (днів) |
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74LVC2G07FZ4-7 | Diodes Incorporated |
Description: IC BUFFER NON-INVERT 5.5V 6DFNPackaging: Tape & Reel (TR) Package / Case: 6-XFDFN Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: X2-DFN1410-6 |
на замовлення 72500 шт: термін постачання 21-31 дні (днів) |
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74LVC2G07FZ4-7 | Diodes Incorporated |
Description: IC BUFFER NON-INVERT 5.5V 6DFNPackaging: Cut Tape (CT) Package / Case: 6-XFDFN Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: X2-DFN1410-6 |
на замовлення 73698 шт: термін постачання 21-31 дні (днів) |
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74LVC2G07FW4-7 | Diodes Incorporated |
Description: IC BUFFER NON-INVERT 5.5V 6DFNPackaging: Tape & Reel (TR) Package / Case: 6-XFDFN Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: X2-DFN1010-6 |
на замовлення 690000 шт: термін постачання 21-31 дні (днів) |
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74LVC2G07FW4-7 | Diodes Incorporated |
Description: IC BUFFER NON-INVERT 5.5V 6DFNPackaging: Cut Tape (CT) Package / Case: 6-XFDFN Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: X2-DFN1010-6 |
на замовлення 694435 шт: термін постачання 21-31 дні (днів) |
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B130-13-F-2477 | Diodes Incorporated |
Description: DIODE Packaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 110pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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3.0SMCJ24CA-13 | Diodes Incorporated |
Description: TRANSIENT VOLTAGE SUPPRESSOR SMCPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 77.1A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: SMC Bidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 38.9V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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3.0SMCJ24A-13 | Diodes Incorporated |
Description: TVS DIODE 24VWM 38.9VC SMCPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Capacitance @ Frequency: 3000pF @ 1MHz Current - Peak Pulse (10/1000µs): 77.1A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: SMC Unidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 38.9V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No |
на замовлення 201000 шт: термін постачання 21-31 дні (днів) |
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3.0SMCJ24A-13 | Diodes Incorporated |
Description: TVS DIODE 24VWM 38.9VC SMCPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Capacitance @ Frequency: 3000pF @ 1MHz Current - Peak Pulse (10/1000µs): 77.1A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: SMC Unidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 38.9V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No |
на замовлення 203750 шт: термін постачання 21-31 дні (днів) |
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DMN3055LFDB-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 5A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) |
на замовлення 2121000 шт: термін постачання 21-31 дні (днів) |
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DMN3055LFDB-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 5A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) |
на замовлення 2123945 шт: термін постачання 21-31 дні (днів) |
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FMMT491AQTA | Diodes Incorporated |
Description: SS MID-PERF TRANSISTOR SOT23 T&RPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-23-3 Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 500 mW Qualification: AEC-Q101 |
на замовлення 971900 шт: термін постачання 21-31 дні (днів) |
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AL1666AS-13 | Diodes Incorporated |
Description: LED OFFLINE DRIVER SO-8 T&R 4KPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Voltage - Output: 0.4V ~ 23V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 150kHz Type: DC DC Controller Operating Temperature: -40°C ~ 105°C (TA) Applications: General Purpose Internal Switch(s): No Topology: Flyback, Step-Down (Buck), Step-Up (Boost) Supplier Device Package: 8-SO Dimming: Analog, PWM Voltage - Supply (Min): 8.5V Voltage - Supply (Max): 23V |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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AL1666AS-13 | Diodes Incorporated |
Description: LED OFFLINE DRIVER SO-8 T&R 4KPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Voltage - Output: 0.4V ~ 23V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 150kHz Type: DC DC Controller Operating Temperature: -40°C ~ 105°C (TA) Applications: General Purpose Internal Switch(s): No Topology: Flyback, Step-Down (Buck), Step-Up (Boost) Supplier Device Package: 8-SO Dimming: Analog, PWM Voltage - Supply (Min): 8.5V Voltage - Supply (Max): 23V |
на замовлення 38989 шт: термін постачання 21-31 дні (днів) |
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BZX84C22W-7-F | Diodes Incorporated |
Description: DIODE ZENER 22V 200MW SOT323Tolerance: ±6% Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 125°C Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: SOT-323 Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 15.4 V |
на замовлення 78000 шт: термін постачання 21-31 дні (днів) |
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BZX84C22W-7-F | Diodes Incorporated |
Description: DIODE ZENER 22V 200MW SOT323Tolerance: ±6% Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 125°C Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: SOT-323 Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 15.4 V |
на замовлення 78000 шт: термін постачання 21-31 дні (днів) |
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SBR8U60P5-13-2169 | Diodes Incorporated |
Description: DIODE SBR 60V 8A POWERDI5 Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 8A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A Current - Reverse Leakage @ Vr: 600 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SBR8A45SP5-13-2169 | Diodes Incorporated |
Description: DIODE Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 8A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 8 A Current - Reverse Leakage @ Vr: 300 µA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DSC10A065D1-13 | Diodes Incorporated |
Description: DIODE SIL CARBIDE 650V 10A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 434pF @ 100mV, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-252 (Type WX) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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DSC10A065D1-13 | Diodes Incorporated |
Description: DIODE SIL CARBIDE 650V 10A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 434pF @ 100mV, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-252 (Type WX) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V |
на замовлення 9436 шт: термін постачання 21-31 дні (днів) |
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AP7340-18FS4-7 | Diodes Incorporated |
Description: IC REG LINEAR 1.8V 150MA 4DFNPackaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 50 µA Voltage - Input (Max): 5.25V Number of Regulators: 1 Supplier Device Package: X2-DFN1010-4 Voltage - Output (Min/Fixed): 1.8V Control Features: Enable PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.42V @ 150mA Protection Features: Over Current Current - Supply (Max): 100 µA |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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AP7340-18FS4-7 | Diodes Incorporated |
Description: IC REG LINEAR 1.8V 150MA 4DFNPackaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 50 µA Voltage - Input (Max): 5.25V Number of Regulators: 1 Supplier Device Package: X2-DFN1010-4 Voltage - Output (Min/Fixed): 1.8V Control Features: Enable PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.42V @ 150mA Protection Features: Over Current Current - Supply (Max): 100 µA |
на замовлення 63590 шт: термін постачання 21-31 дні (днів) |
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BAS16Q-13-F | Diodes Incorporated |
Description: DIODE STANDARD 75V 300MA SOT233Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 300mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V Qualification: AEC-Q101 |
на замовлення 800000 шт: термін постачання 21-31 дні (днів) |
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BAS16Q-13-F | Diodes Incorporated |
Description: DIODE STANDARD 75V 300MA SOT233Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 300mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V Qualification: AEC-Q101 |
на замовлення 807986 шт: термін постачання 21-31 дні (днів) |
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BAS16Q-7-F | Diodes Incorporated |
Description: DIODE STANDARD 75V 300MA SOT233Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 300mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V Qualification: AEC-Q101 |
на замовлення 888000 шт: термін постачання 21-31 дні (днів) |
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DDZ20ASF-7 | Diodes Incorporated |
Description: DIODE ZENER 18.51V 500MW SOD323FTolerance: ±2.46% Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 18.51 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: SOD-323F Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 70 nA @ 17.1 V |
на замовлення 87000 шт: термін постачання 21-31 дні (днів) |
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DDZ20ASF-7 | Diodes Incorporated |
Description: DIODE ZENER 18.51V 500MW SOD323FTolerance: ±2.46% Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 18.51 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: SOD-323F Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 70 nA @ 17.1 V |
на замовлення 89785 шт: термін постачання 21-31 дні (днів) |
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DDZ20DSF-7 | Diodes Incorporated |
Description: DIODE ZENER 20.22V 500MW SOD323FTolerance: ±3% Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 20.22 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: SOD-323F Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 70 nA @ 18.7 V |
на замовлення 135000 шт: термін постачання 21-31 дні (днів) |
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DDZ20DSF-7 | Diodes Incorporated |
Description: DIODE ZENER 20.22V 500MW SOD323FTolerance: ±3% Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 20.22 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: SOD-323F Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 70 nA @ 18.7 V |
на замовлення 135156 шт: термін постачання 21-31 дні (днів) |
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| DDZ20C-7-79 | Diodes Incorporated |
Description: DIODE ZENER Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| DMC6040SSDQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 60V 5.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V, 1030pF @ 30V
Rds On (Max) @ Id, Vgs: 40mOhm @ 8A, 10V, 110mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 19.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 60V 5.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V, 1030pF @ 30V
Rds On (Max) @ Id, Vgs: 40mOhm @ 8A, 10V, 110mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 19.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DMC6040SSDQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 60V 5.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V, 1030pF @ 30V
Rds On (Max) @ Id, Vgs: 40mOhm @ 8A, 10V, 110mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 19.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 60V 5.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V, 1030pF @ 30V
Rds On (Max) @ Id, Vgs: 40mOhm @ 8A, 10V, 110mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 19.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2264 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 64.13 грн |
| 10+ | 47.58 грн |
| 100+ | 32.85 грн |
| 500+ | 25.80 грн |
| 1000+ | 23.48 грн |
| B370CE-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 70V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 105pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 70 V
Description: DIODE SCHOTTKY 70V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 105pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 70 V
товару немає в наявності
В кошику
од. на суму грн.
| B390CE-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 90V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 105pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 90 V
Description: DIODE SCHOTTKY 90V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 105pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 90 V
товару немає в наявності
В кошику
од. на суму грн.
| DMC2991UDJ-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.5A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V, 17pF @ 16V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Description: MOSFET N/P-CH 20V 0.5A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V, 17pF @ 16V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
на замовлення 510000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 3.65 грн |
| 20000+ | 3.19 грн |
| 30000+ | 3.03 грн |
| 50000+ | 2.68 грн |
| 70000+ | 2.58 грн |
| 100000+ | 2.48 грн |
| 250000+ | 2.34 грн |
| DMC2991UDJ-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.5A SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V, 17pF @ 16V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Description: MOSFET N/P-CH 20V 0.5A SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V, 17pF @ 16V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
на замовлення 519695 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 21.38 грн |
| 26+ | 12.43 грн |
| 100+ | 7.75 грн |
| 500+ | 5.36 грн |
| 1000+ | 4.74 грн |
| 2000+ | 4.21 грн |
| 5000+ | 3.59 грн |
| DMC2710UDW-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.62 грн |
| 6000+ | 4.11 грн |
| DMC2710UDW-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
на замовлення 6126 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.66 грн |
| 22+ | 14.73 грн |
| 100+ | 9.24 грн |
| 500+ | 6.42 грн |
| 1000+ | 5.69 грн |
| DMC2710UDWQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.91 грн |
| 6000+ | 4.26 грн |
| 9000+ | 3.66 грн |
| DMC2710UDWQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9428 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 23.84 грн |
| 23+ | 14.17 грн |
| 100+ | 8.87 грн |
| 500+ | 6.16 грн |
| 1000+ | 5.47 грн |
| DMC2710UV-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V 1.1A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 460mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Description: MOSFET N/P-CH 20V 1.1A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 460mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
на замовлення 87000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.41 грн |
| 6000+ | 6.32 грн |
| 9000+ | 5.46 грн |
| 15000+ | 5.02 грн |
| 21000+ | 5.01 грн |
| 30000+ | 4.92 грн |
| 75000+ | 4.56 грн |
| DMC2710UV-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V 1.1A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 460mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Description: MOSFET N/P-CH 20V 1.1A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 460mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
на замовлення 90526 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.53 грн |
| 16+ | 20.03 грн |
| 100+ | 12.68 грн |
| 500+ | 8.90 грн |
| 1000+ | 7.93 грн |
| DMG6602SVTX-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V, 420pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 9nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V, 420pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 9nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.03 грн |
| DMG6602SVTX-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V, 420pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 9nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V, 420pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 9nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3463 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.95 грн |
| 18+ | 18.29 грн |
| 100+ | 9.46 грн |
| 500+ | 8.65 грн |
| 1000+ | 7.75 грн |
| DMC3071LVT-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 4.6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
Description: MOSFET N/P-CH 30V 4.6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.53 грн |
| 6000+ | 6.02 грн |
| 9000+ | 5.99 грн |
| 15000+ | 5.60 грн |
| DMC3071LVT-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 4.6A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
Description: MOSFET N/P-CH 30V 4.6A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
на замовлення 16490 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.00 грн |
| 15+ | 22.01 грн |
| 100+ | 14.01 грн |
| 500+ | 9.88 грн |
| 1000+ | 8.83 грн |
| DMC3730UVT-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 25V 0.68A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta), 460mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 63pF @ 10V
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.64nC @ 4.5V, 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 25V 0.68A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta), 460mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 63pF @ 10V
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.64nC @ 4.5V, 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
на замовлення 186000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.17 грн |
| 6000+ | 6.34 грн |
| 9000+ | 6.04 грн |
| 15000+ | 5.36 грн |
| 21000+ | 5.17 грн |
| 30000+ | 5.08 грн |
| DMC3730UVT-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 25V 0.68A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta), 460mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 63pF @ 10V
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.64nC @ 4.5V, 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 25V 0.68A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta), 460mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 63pF @ 10V
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.64nC @ 4.5V, 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
на замовлення 188935 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 26.31 грн |
| 19+ | 17.02 грн |
| 100+ | 11.47 грн |
| 500+ | 8.34 грн |
| 1000+ | 7.53 грн |
| DMC2991UDA-7B |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.48A 6DFN
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 350mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 16V, 17pF @ 15V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Description: MOSFET N/P-CH 20V 0.48A 6DFN
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 350mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 16V, 17pF @ 15V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
на замовлення 2318457 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 13.98 грн |
| 39+ | 8.15 грн |
| 100+ | 5.05 грн |
| 500+ | 3.45 грн |
| 1000+ | 3.00 грн |
| 2000+ | 2.68 грн |
| 5000+ | 2.24 грн |
| 10000+ | 2.03 грн |
| 50000+ | 2.00 грн |
| DMC3016LDV-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 21A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc), 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 10V, 25mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V 21A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc), 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 10V, 25mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DMC3016LDV-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 21A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc), 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 10V, 25mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V 21A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc), 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 10V, 25mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2636 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 76.46 грн |
| 10+ | 46.32 грн |
| 100+ | 30.25 грн |
| 500+ | 21.92 грн |
| 1000+ | 19.83 грн |
| AP7368D-30RS4-7 |
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Виробник: Diodes Incorporated
Description: LDO CMOS HiCurr X1-DFN1612-8 T&R
Packaging: Bulk
Package / Case: 8-XFDFN Exposed Pad
Voltage - Output: 3V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LDO, Cameras, Wireless Devices
Supplier Device Package: X1-DFN1612-8 (Type B)
Description: LDO CMOS HiCurr X1-DFN1612-8 T&R
Packaging: Bulk
Package / Case: 8-XFDFN Exposed Pad
Voltage - Output: 3V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LDO, Cameras, Wireless Devices
Supplier Device Package: X1-DFN1612-8 (Type B)
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.53 грн |
| 12+ | 28.19 грн |
| 25+ | 26.32 грн |
| 100+ | 19.75 грн |
| 250+ | 18.34 грн |
| 500+ | 15.52 грн |
| 1000+ | 11.79 грн |
| 2500+ | 10.75 грн |
| 5000+ | 10.06 грн |
| AP7368D-09RS4-7 |
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Виробник: Diodes Incorporated
Description: LDO CMOS HiCurr X1-DFN1612-8 T&R
Packaging: Bulk
Package / Case: 8-XFDFN Exposed Pad
Voltage - Output: 0.9V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LDO, Cameras, Wireless Devices
Supplier Device Package: X1-DFN1612-8 (Type B)
Description: LDO CMOS HiCurr X1-DFN1612-8 T&R
Packaging: Bulk
Package / Case: 8-XFDFN Exposed Pad
Voltage - Output: 0.9V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LDO, Cameras, Wireless Devices
Supplier Device Package: X1-DFN1612-8 (Type B)
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.53 грн |
| 12+ | 28.19 грн |
| 25+ | 26.32 грн |
| 100+ | 19.75 грн |
| 250+ | 18.34 грн |
| 500+ | 15.52 грн |
| 1000+ | 11.79 грн |
| 2500+ | 10.75 грн |
| 5000+ | 10.06 грн |
| AP7368D-33RS4-7 |
![]() |
Виробник: Diodes Incorporated
Description: LDO CMOS HiCurr X1-DFN1612-8 T&R
Packaging: Bulk
Package / Case: 8-XFDFN Exposed Pad
Voltage - Output: 3.3V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LDO, Cameras, Wireless Devices
Supplier Device Package: X1-DFN1612-8 (Type B)
Description: LDO CMOS HiCurr X1-DFN1612-8 T&R
Packaging: Bulk
Package / Case: 8-XFDFN Exposed Pad
Voltage - Output: 3.3V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LDO, Cameras, Wireless Devices
Supplier Device Package: X1-DFN1612-8 (Type B)
на замовлення 29975 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.53 грн |
| 12+ | 28.19 грн |
| 25+ | 26.32 грн |
| 100+ | 19.75 грн |
| 250+ | 18.34 грн |
| 500+ | 15.52 грн |
| 1000+ | 11.79 грн |
| 2500+ | 10.75 грн |
| 5000+ | 10.06 грн |
| PSMUX154ZMEX |
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Виробник: Diodes Incorporated
Description: IC SWITCH SPDT X 2 6.5OHM 10UQFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 6.5Ohm
-3db Bandwidth: 850MHz
Supplier Device Package: 10-UQFN (1.8x1.4)
Voltage - Supply, Single (V+): 1.8V ~ 4.3V
Crosstalk: -90dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 25ns, 4ns (Typ)
Channel Capacitance (CS(off), CD(off)): 6pF, 1.9pF
Current - Leakage (IS(off)) (Max): 2µA
Number of Circuits: 2
Description: IC SWITCH SPDT X 2 6.5OHM 10UQFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 6.5Ohm
-3db Bandwidth: 850MHz
Supplier Device Package: 10-UQFN (1.8x1.4)
Voltage - Supply, Single (V+): 1.8V ~ 4.3V
Crosstalk: -90dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 25ns, 4ns (Typ)
Channel Capacitance (CS(off), CD(off)): 6pF, 1.9pF
Current - Leakage (IS(off)) (Max): 2µA
Number of Circuits: 2
на замовлення 2973 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 99.48 грн |
| 10+ | 60.09 грн |
| 25+ | 50.64 грн |
| 100+ | 37.48 грн |
| 250+ | 32.57 грн |
| 500+ | 29.56 грн |
| 1000+ | 26.61 грн |
| APX803L05-29SA-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 35ms Minimum
Voltage - Threshold: 2.9V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 35ms Minimum
Voltage - Threshold: 2.9V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.42 грн |
| 6000+ | 8.21 грн |
| 9000+ | 7.77 грн |
| 15000+ | 6.84 грн |
| 21000+ | 6.57 грн |
| 30000+ | 6.30 грн |
| APX803L05-29SA-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 35ms Minimum
Voltage - Threshold: 2.9V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 35ms Minimum
Voltage - Threshold: 2.9V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
на замовлення 41965 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 46.04 грн |
| 12+ | 26.44 грн |
| 25+ | 21.72 грн |
| 100+ | 15.39 грн |
| 250+ | 12.91 грн |
| 500+ | 11.39 грн |
| 1000+ | 9.95 грн |
| MMBZ5245BQ-7-F |
Виробник: Diodes Incorporated
Description: ZENER DIODE SOT23 T&R 3K
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
Description: ZENER DIODE SOT23 T&R 3K
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
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| MMBZ5245BQ-7-F |
Виробник: Diodes Incorporated
Description: ZENER DIODE SOT23 T&R 3K
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
Description: ZENER DIODE SOT23 T&R 3K
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
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В кошику
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| SBR30A45CTB-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ARRAY SBR 45V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Qualification: AEC-Q101
Description: DIODE ARRAY SBR 45V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Qualification: AEC-Q101
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 42.46 грн |
| 1600+ | 38.88 грн |
| 2400+ | 38.75 грн |
| SBR30A45CTB-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ARRAY SBR 45V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Qualification: AEC-Q101
Description: DIODE ARRAY SBR 45V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Qualification: AEC-Q101
на замовлення 6922 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 98.66 грн |
| 10+ | 71.49 грн |
| 100+ | 58.16 грн |
| 74LVC2G07FZ4-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1410-6
Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1410-6
на замовлення 72500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 9.28 грн |
| 10000+ | 8.70 грн |
| 15000+ | 8.59 грн |
| 25000+ | 7.94 грн |
| 35000+ | 7.87 грн |
| 50000+ | 7.80 грн |
| 74LVC2G07FZ4-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1410-6
Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1410-6
на замовлення 73698 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 22.20 грн |
| 21+ | 15.12 грн |
| 25+ | 13.43 грн |
| 100+ | 10.84 грн |
| 250+ | 10.01 грн |
| 500+ | 9.50 грн |
| 1000+ | 8.94 грн |
| 2500+ | 8.83 грн |
| 74LVC2G07FW4-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1010-6
Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1010-6
на замовлення 690000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 9.95 грн |
| 10000+ | 8.96 грн |
| 25000+ | 8.22 грн |
| 50000+ | 7.42 грн |
| 74LVC2G07FW4-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1010-6
Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1010-6
на замовлення 694435 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.00 грн |
| 11+ | 29.06 грн |
| 25+ | 26.57 грн |
| 100+ | 18.56 грн |
| 250+ | 16.82 грн |
| 500+ | 13.92 грн |
| 1000+ | 10.27 грн |
| 2500+ | 9.41 грн |
| B130-13-F-2477 |
Виробник: Diodes Incorporated
Description: DIODE
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Description: DIODE
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
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од. на суму грн.
| 3.0SMCJ24CA-13 |
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Виробник: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 77.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Description: TRANSIENT VOLTAGE SUPPRESSOR SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 77.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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| 3.0SMCJ24A-13 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 24VWM 38.9VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 3000pF @ 1MHz
Current - Peak Pulse (10/1000µs): 77.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Description: TVS DIODE 24VWM 38.9VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 3000pF @ 1MHz
Current - Peak Pulse (10/1000µs): 77.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
на замовлення 201000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 44.59 грн |
| 6000+ | 42.17 грн |
| 3.0SMCJ24A-13 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 24VWM 38.9VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 3000pF @ 1MHz
Current - Peak Pulse (10/1000µs): 77.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Description: TVS DIODE 24VWM 38.9VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 3000pF @ 1MHz
Current - Peak Pulse (10/1000µs): 77.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
на замовлення 203750 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 112.64 грн |
| 10+ | 83.29 грн |
| 100+ | 58.71 грн |
| 500+ | 45.71 грн |
| 1000+ | 42.15 грн |
| DMN3055LFDB-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Description: MOSFET 2N-CH 5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
на замовлення 2121000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 11.06 грн |
| 6000+ | 9.74 грн |
| 9000+ | 9.18 грн |
| 15000+ | 8.22 грн |
| 21000+ | 7.93 грн |
| 30000+ | 7.68 грн |
| DMN3055LFDB-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 5A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Description: MOSFET 2N-CH 5A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
на замовлення 2123945 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 49.33 грн |
| 11+ | 29.37 грн |
| 100+ | 18.86 грн |
| 500+ | 13.43 грн |
| 1000+ | 12.06 грн |
| FMMT491AQTA |
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Виробник: Diodes Incorporated
Description: SS MID-PERF TRANSISTOR SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Qualification: AEC-Q101
Description: SS MID-PERF TRANSISTOR SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Qualification: AEC-Q101
на замовлення 971900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 39.46 грн |
| 11+ | 29.61 грн |
| 100+ | 17.76 грн |
| 500+ | 15.43 грн |
| 1000+ | 10.49 грн |
| AL1666AS-13 |
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Виробник: Diodes Incorporated
Description: LED OFFLINE DRIVER SO-8 T&R 4K
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 0.4V ~ 23V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 150kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 105°C (TA)
Applications: General Purpose
Internal Switch(s): No
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-SO
Dimming: Analog, PWM
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 23V
Description: LED OFFLINE DRIVER SO-8 T&R 4K
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 0.4V ~ 23V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 150kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 105°C (TA)
Applications: General Purpose
Internal Switch(s): No
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-SO
Dimming: Analog, PWM
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 23V
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 18.71 грн |
| 8000+ | 16.77 грн |
| 12000+ | 16.15 грн |
| 28000+ | 14.58 грн |
| AL1666AS-13 |
![]() |
Виробник: Diodes Incorporated
Description: LED OFFLINE DRIVER SO-8 T&R 4K
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 0.4V ~ 23V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 150kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 105°C (TA)
Applications: General Purpose
Internal Switch(s): No
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-SO
Dimming: Analog, PWM
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 23V
Description: LED OFFLINE DRIVER SO-8 T&R 4K
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 0.4V ~ 23V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 150kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 105°C (TA)
Applications: General Purpose
Internal Switch(s): No
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-SO
Dimming: Analog, PWM
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 23V
на замовлення 38989 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 48.51 грн |
| 10+ | 41.01 грн |
| 25+ | 38.51 грн |
| 100+ | 29.50 грн |
| 250+ | 27.40 грн |
| 500+ | 23.32 грн |
| 1000+ | 18.35 грн |
| BZX84C22W-7-F |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 22V 200MW SOT323
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 125°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15.4 V
Description: DIODE ZENER 22V 200MW SOT323
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 125°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15.4 V
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.88 грн |
| 6000+ | 2.51 грн |
| 9000+ | 2.38 грн |
| 15000+ | 2.09 грн |
| BZX84C22W-7-F |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 22V 200MW SOT323
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 125°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15.4 V
Description: DIODE ZENER 22V 200MW SOT323
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 125°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15.4 V
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 13.15 грн |
| 37+ | 8.71 грн |
| 100+ | 5.80 грн |
| 500+ | 4.15 грн |
| 1000+ | 3.72 грн |
| SBR8U60P5-13-2169 |
Виробник: Diodes Incorporated
Description: DIODE SBR 60V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Description: DIODE SBR 60V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
товару немає в наявності
В кошику
од. на суму грн.
| SBR8A45SP5-13-2169 |
Виробник: Diodes Incorporated
Description: DIODE
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 8 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Description: DIODE
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 8 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
товару немає в наявності
В кошику
од. на суму грн.
| DSC10A065D1-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SIL CARBIDE 650V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 434pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 434pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 78.07 грн |
| DSC10A065D1-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SIL CARBIDE 650V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 434pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 434pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
на замовлення 9436 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 225.27 грн |
| 10+ | 141.24 грн |
| 100+ | 97.97 грн |
| 500+ | 77.97 грн |
| AP7340-18FS4-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC REG LINEAR 1.8V 150MA 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.42V @ 150mA
Protection Features: Over Current
Current - Supply (Max): 100 µA
Description: IC REG LINEAR 1.8V 150MA 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.42V @ 150mA
Protection Features: Over Current
Current - Supply (Max): 100 µA
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 8.52 грн |
| 10000+ | 7.56 грн |
| 15000+ | 7.24 грн |
| 25000+ | 6.46 грн |
| 35000+ | 6.26 грн |
| 50000+ | 6.07 грн |
| AP7340-18FS4-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC REG LINEAR 1.8V 150MA 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.42V @ 150mA
Protection Features: Over Current
Current - Supply (Max): 100 µA
Description: IC REG LINEAR 1.8V 150MA 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.42V @ 150mA
Protection Features: Over Current
Current - Supply (Max): 100 µA
на замовлення 63590 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 39.46 грн |
| 14+ | 23.67 грн |
| 25+ | 19.67 грн |
| 100+ | 14.14 грн |
| 250+ | 12.00 грн |
| 500+ | 10.69 грн |
| 1000+ | 9.44 грн |
| 2500+ | 8.28 грн |
| BAS16Q-13-F |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 75V 300MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
Description: DIODE STANDARD 75V 300MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
на замовлення 800000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 1.59 грн |
| 20000+ | 1.29 грн |
| 30000+ | 1.27 грн |
| 50000+ | 1.15 грн |
| 70000+ | 1.11 грн |
| 100000+ | 1.07 грн |
| 250000+ | 0.98 грн |
| BAS16Q-13-F |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 75V 300MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
Description: DIODE STANDARD 75V 300MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
на замовлення 807986 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 37+ | 9.04 грн |
| 56+ | 5.70 грн |
| 100+ | 3.42 грн |
| 500+ | 2.44 грн |
| 1000+ | 2.12 грн |
| 2000+ | 1.94 грн |
| 5000+ | 1.73 грн |
| BAS16Q-7-F |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 75V 300MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
Description: DIODE STANDARD 75V 300MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
на замовлення 888000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.59 грн |
| 6000+ | 1.33 грн |
| 9000+ | 1.15 грн |
| 15000+ | 1.04 грн |
| 21000+ | 1.03 грн |
| DDZ20ASF-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 18.51V 500MW SOD323F
Tolerance: ±2.46%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18.51 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 17.1 V
Description: DIODE ZENER 18.51V 500MW SOD323F
Tolerance: ±2.46%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18.51 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 17.1 V
на замовлення 87000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.19 грн |
| 6000+ | 1.99 грн |
| 9000+ | 1.70 грн |
| 30000+ | 1.47 грн |
| 75000+ | 1.27 грн |
| DDZ20ASF-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 18.51V 500MW SOD323F
Tolerance: ±2.46%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18.51 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 17.1 V
Description: DIODE ZENER 18.51V 500MW SOD323F
Tolerance: ±2.46%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18.51 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 17.1 V
на замовлення 89785 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 12.33 грн |
| 37+ | 8.63 грн |
| 100+ | 4.66 грн |
| 500+ | 3.44 грн |
| 1000+ | 2.39 грн |
| DDZ20DSF-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 20.22V 500MW SOD323F
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20.22 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 18.7 V
Description: DIODE ZENER 20.22V 500MW SOD323F
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20.22 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 18.7 V
на замовлення 135000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.71 грн |
| 6000+ | 2.47 грн |
| 9000+ | 2.10 грн |
| 30000+ | 1.83 грн |
| 75000+ | 1.58 грн |
| DDZ20DSF-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 20.22V 500MW SOD323F
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20.22 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 18.7 V
Description: DIODE ZENER 20.22V 500MW SOD323F
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20.22 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 18.7 V
на замовлення 135156 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 15.62 грн |
| 30+ | 10.69 грн |
| 100+ | 5.79 грн |
| 500+ | 4.26 грн |
| 1000+ | 2.96 грн |










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