Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (71654) > Сторінка 682 з 1195
| Фото | Назва | Виробник | Інформація |
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DMTH8028LFVWQ-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI33Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 631 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 2485 шт: термін постачання 21-31 дні (днів) |
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DMTH8012LPSW-13 | Diodes Incorporated |
Description: MOSFET N-CH 80V 53.7A PWRDI5060Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type Q) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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DMTH8012LPSW-13 | Diodes Incorporated |
Description: MOSFET N-CH 80V 53.7A PWRDI5060Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type Q) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V |
на замовлення 12730 шт: термін постачання 21-31 дні (днів) |
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DMT61M5SPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V POWERDI506Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 215A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V Power Dissipation (Max): 2.7W (Ta), 139W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (SWP) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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DMT61M5SPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V POWERDI506Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 215A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V Power Dissipation (Max): 2.7W (Ta), 139W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (SWP) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V |
на замовлення 17071 шт: термін постачання 21-31 дні (днів) |
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DMP3028LPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V POWERDI506Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Power Dissipation (Max): 1.28W (Ta), 2.1W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1421 pF @ 15 V |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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DMT35M4LPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V POWERDI506Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.9A (Ta), 71.1A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1029 pF @ 15 V |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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DMTH47M2LPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI506Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 20 V |
на замовлення 122500 шт: термін постачання 21-31 дні (днів) |
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DMTH4008LPSW-13 | Diodes Incorporated |
Description: ICPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMP3021SPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V PowerDI506Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 52.7A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1799 pF @ 15 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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DMP6050SPSW-13 | Diodes Incorporated |
Description: ICPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Power Dissipation (Max): 1.3W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMP3011SPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V PowerDI506Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 65A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMTH47M2SPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI506Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMP10H088SPSW-13 | Diodes Incorporated |
Description: ICPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 83mOhm @ 4.4A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 27.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMWSH120H90SM4 | Diodes Incorporated |
Description: SICFET N-CH 1200V TO-247Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 97.5mOhm @ 20A, 15V Power Dissipation (Max): 235W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 5mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 51.1 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1112 pF @ 1000 V |
на замовлення 120320 шт: термін постачання 21-31 дні (днів) |
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DMWSH120H90SM3Q | Diodes Incorporated |
Description: SICFET N-CH 1200V TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 97.5mOhm @ 20A, 15V Power Dissipation (Max): 246W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 5mA Supplier Device Package: TO-247 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 50.9 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 1000 V Qualification: AEC-Q101 |
на замовлення 1195 шт: термін постачання 21-31 дні (днів) |
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| DMWSH120H90SCT7-13 | Diodes Incorporated |
Description: SICFET N-CH 1200V TO-247Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V Power Dissipation (Max): 197W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 5mA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMWSH120H90SCT7Q-13 | Diodes Incorporated |
Description: SICFET N-CH 1200V TO-247Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V Power Dissipation (Max): 197W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 5mA Supplier Device Package: TO-263-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMWSH120H90SCT7 | Diodes Incorporated |
Description: SICFET N-CH 1200V TO-247Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V Power Dissipation (Max): 197W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 5mA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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| DMWSH120H90SCT7Q | Diodes Incorporated |
Description: SICFET N-CH 1200V TO-247Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V Power Dissipation (Max): 197W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 5mA Supplier Device Package: TO-263-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V Qualification: AEC-Q101 |
на замовлення 1450 шт: термін постачання 21-31 дні (днів) |
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PI5A3166CEX | Diodes Incorporated |
Description: IC SW SPST-NOX1 1.2OHM SC70-5Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 1.2Ohm -3db Bandwidth: 200MHz Supplier Device Package: SC-70-5 Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 35pC Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 2ns, 5ns Channel Capacitance (CS(off), CD(off)): 3.5pF Current - Leakage (IS(off)) (Max): 20nA Number of Circuits: 1 |
на замовлення 273000 шт: термін постачання 21-31 дні (днів) |
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PI5A3166CEX | Diodes Incorporated |
Description: IC SW SPST-NOX1 1.2OHM SC70-5Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 1.2Ohm -3db Bandwidth: 200MHz Supplier Device Package: SC-70-5 Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 35pC Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 2ns, 5ns Channel Capacitance (CS(off), CD(off)): 3.5pF Current - Leakage (IS(off)) (Max): 20nA Number of Circuits: 1 |
на замовлення 275938 шт: термін постачання 21-31 дні (днів) |
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FN2000118 | Diodes Incorporated |
Description: XTAL OSC XO 20.0000MHZ CMOS SMDPackaging: Bulk Package / Case: 4-SMD, No Lead Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Mounting Type: Surface Mount Output: CMOS Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 3.3V Current - Supply (Max): 15mA Supplier Device Package: 4-SMD (7x5) Height - Seated (Max): 0.071" (1.80mm) Frequency: 20 MHz Base Resonator: Crystal |
на замовлення 970 шт: термін постачання 21-31 дні (днів) |
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DMN6041SVTQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V TSOT26 T&RPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMN6041SVT-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V TSOT26 T&RPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V Power Dissipation (Max): 900mW Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMN6041SVTQ-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V TSOT26 T&RPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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| SDT12A120P5Q-13 | Diodes Incorporated |
Description: SCHOTTKY RECTIFIER PDI5Packaging: Tape & Reel (TR) Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SDT10H50P5-7 | Diodes Incorporated |
Description: DIODE SCHOTTKY 50V 10A POWERDI 5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A Current - Reverse Leakage @ Vr: 300 µA @ 50 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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SDT10H50P5-7D | Diodes Incorporated |
Description: DIODE SCHOTTKY 50V 10A POWERDI 5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A Current - Reverse Leakage @ Vr: 300 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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B2100AQ-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 100V 2A SMAPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 75pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A Current - Reverse Leakage @ Vr: 8 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 4793 шт: термін постачання 21-31 дні (днів) |
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GBJ15005 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 50V 15A GBJPackaging: Tube Package / Case: 4-SIP, GBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBJ Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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GBJ15005-F | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 50V 15A GBJPackaging: Tube Package / Case: 4-SIP, GBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBJ Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
на замовлення 1200 шт: термін постачання 21-31 дні (днів) |
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DF15005S | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 50V 1.5A DF-SPackaging: Bulk Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DF-S Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
на замовлення 3484 шт: термін постачання 21-31 дні (днів) |
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AL8866SP-13 | Diodes Incorporated |
Description: ICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Voltage - Output: 20V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 400kHz Type: DC DC Controller Operating Temperature: -40°C ~ 105°C (TA) Applications: LED Lighting Internal Switch(s): Yes Topology: SEPIC, Step-Down (Buck), Step-Up (Boost) Supplier Device Package: 8-SO-EP Dimming: Analog, PWM Voltage - Supply (Min): 4.7V Voltage - Supply (Max): 85V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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AL8866SP-13 | Diodes Incorporated |
Description: ICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Voltage - Output: 20V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 400kHz Type: DC DC Controller Operating Temperature: -40°C ~ 105°C (TA) Applications: LED Lighting Internal Switch(s): Yes Topology: SEPIC, Step-Down (Buck), Step-Up (Boost) Supplier Device Package: 8-SO-EP Dimming: Analog, PWM Voltage - Supply (Min): 4.7V Voltage - Supply (Max): 85V |
на замовлення 4980 шт: термін постачання 21-31 дні (днів) |
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FL2400128 | Diodes Incorporated |
Description: CRYSTAL 24.0000MHZ 10PF SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 10pF Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -40°C ~ 85°C Frequency Stability: ±25ppm Frequency Tolerance: ±10ppm Operating Mode: Fundamental Supplier Device Package: 4-SMD (3.2x2.5) Height - Seated (Max): 0.031" (0.78mm) ESR (Equivalent Series Resistance): 60 Ohms Frequency: 24 MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FL2400128W | Diodes Incorporated |
Description: CRYSTAL SURFACE MOUNTPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Mode: Fundamental Supplier Device Package: 4-SMD (3.2x2.5) Height - Seated (Max): 0.031" (0.78mm) |
на замовлення 243000 шт: термін постачання 21-31 дні (днів) |
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FL2400129 | Diodes Incorporated |
Description: CRYSTAL 24.0000MHZ 20PF SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 20pF Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -40°C ~ 85°C Frequency Stability: ±20ppm Frequency Tolerance: ±20ppm Operating Mode: Fundamental Supplier Device Package: 4-SMD (3.2x2.5) Height - Seated (Max): 0.031" (0.78mm) ESR (Equivalent Series Resistance): 60 Ohms Frequency: 24 MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FL6240012Q | Diodes Incorporated |
Description: CRYSTAL 62.4000MHZ 6PF SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 6pF Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -40°C ~ 85°C Frequency Stability: ±15ppm Frequency Tolerance: ±15ppm Operating Mode: Fundamental Supplier Device Package: 4-SMD (3.2x2.5) Height - Seated (Max): 0.031" (0.78mm) ESR (Equivalent Series Resistance): 40 Ohms Frequency: 62.4 MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SDM02M30DCP3-7 | Diodes Incorporated |
Description: DIODE ARR SCHOT 30V X3-DSN1006-3Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.99 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 400mA Supplier Device Package: X3-DSN1006-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 30 V |
на замовлення 158000 шт: термін постачання 21-31 дні (днів) |
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AH3234Q-P-B | Diodes Incorporated |
Description: HALL UNIPOLAR SWITCH SIP-3 BULKPackaging: Bulk Features: Temperature Compensated Package / Case: 3-SIP Output Type: Switch Polarization: South Pole Mounting Type: Through Hole Function: Latch, Unipolar Switch Operating Temperature: -40°C ~ 150°C Voltage - Supply: 2.7V ~ 27V Technology: Hall Effect Sensing Range: 7mT Trip, 0.3mT Release Current - Supply (Max): 6.9mA Supplier Device Package: 3-SIP Test Condition: -40°C ~ 150°C |
на замовлення 885 шт: термін постачання 21-31 дні (днів) |
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AH3231Q-P-B | Diodes Incorporated |
Description: Hall Unipolar Switch SIP-3 BULKPackaging: Bulk Features: Temperature Compensated Package / Case: 3-SIP Output Type: Current Source Polarization: South Pole Mounting Type: Through Hole Function: Unipolar Switch Operating Temperature: -40°C ~ 150°C Voltage - Supply: 2.7V ~ 27V Technology: Hall Effect Sensing Range: 9mT Trip, 7mT Release Current - Supply (Max): 6.9mA Supplier Device Package: 3-SIP Test Condition: 25°C Grade: Automotive Qualification: AEC-Q100 |
на замовлення 975 шт: термін постачання 21-31 дні (днів) |
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GBU806 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 600V 8A GBUPackaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 66093 шт: термін постачання 21-31 дні (днів) |
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FUS2MD_HF | Diodes Incorporated |
Description: DIODE STANDARD 1000V 2A DO221ACPackaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-221AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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DGD05463M10-13 | Diodes Incorporated |
Description: IC GATE DRVR HALF-BRIDGE 10MSOPPackaging: Tape & Reel (TR) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 14V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 50 V Supplier Device Package: 10-MSOP Rise / Fall Time (Typ): 17ns, 12ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 1.5A, 2.5A DigiKey Programmable: Not Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DGD05463M10-13 | Diodes Incorporated |
Description: IC GATE DRVR HALF-BRIDGE 10MSOPPackaging: Cut Tape (CT) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 14V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 50 V Supplier Device Package: 10-MSOP Rise / Fall Time (Typ): 17ns, 12ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 1.5A, 2.5A DigiKey Programmable: Not Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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PI7C9X2G404ELQZXAEX | Diodes Incorporated |
Description: IC INTERFACE SPECIALIZED 136AQFNPackaging: Tape & Reel (TR) Package / Case: 136-VFQFN Dual Rows, Exposed Pad Mounting Type: Surface Mount Interface: PCI Express Applications: Packet Switch, 4-Port/4-Lane Supplier Device Package: 136-aQFN (10x10) Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBZ5241BW-7 | Diodes Incorporated |
Description: DIODE ZENER 11V 200MW SOT323Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DDZ9686-7 | Diodes Incorporated |
Description: DIODE ZENER 3.9V 500MW SOD123Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Supplier Device Package: SOD-123 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DDZ9686-7 | Diodes Incorporated |
Description: DIODE ZENER 3.9V 500MW SOD123Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Supplier Device Package: SOD-123 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V |
на замовлення 3930 шт: термін постачання 21-31 дні (днів) |
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SMA6J5.0AQ-13 | Diodes Incorporated |
Description: TVS DIODE 5VWM 9.2VC SMAPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 65.2A Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SMA Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 9.2V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DPC817S-A-TR | Diodes Incorporated |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMDPackage / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 80% @ 5mA Vce Saturation (Max): 200mV Current Transfer Ratio (Max): 160% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 35V Rise / Fall Time (Typ): 18µs, 18µs (Max) Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 852665 шт: термін постачання 21-31 дні (днів) |
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DPC851S-TR | Diodes Incorporated |
Description: PHOTO COUPLER SL-4 T&R 2KPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 350V Rise / Fall Time (Typ): 18µs, 18µs (Max) Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DPC851S-TR | Diodes Incorporated |
Description: PHOTO COUPLER SL-4 T&R 2KPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 350V Rise / Fall Time (Typ): 18µs, 18µs (Max) Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 1937 шт: термін постачання 21-31 дні (днів) |
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DPC851D-TU | Diodes Incorporated |
Description: PHOTO COUPLER DIP-4 TUBE 100PCSPackaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 350V Rise / Fall Time (Typ): 18µs, 18µs (Max) Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 2427 шт: термін постачання 21-31 дні (днів) |
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DPC851D-TU-V | Diodes Incorporated |
Description: PHOTO COUPLER DIP-4 TUBE 100PCSPackaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 350V Rise / Fall Time (Typ): 18µs, 18µs (Max) Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
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DPC851S-TR-V | Diodes Incorporated |
Description: PHOTO COUPLER SL-4 T&R 2KPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 350V Rise / Fall Time (Typ): 18µs, 18µs (Max) Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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DPC851S-TR-V | Diodes Incorporated |
Description: PHOTO COUPLER SL-4 T&R 2KPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 350V Rise / Fall Time (Typ): 18µs, 18µs (Max) Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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DPC851W-TU-V | Diodes Incorporated |
Description: PHOTO COUPLER MDIP-4 TUBE 100PCSPackaging: Tube Package / Case: 4-DIP (0.400", 10.16mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Supplier Device Package: 4-MDIP Voltage - Output (Max): 350V Rise / Fall Time (Typ): 18µs, 18µs (Max) Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DPC851W-TU | Diodes Incorporated |
Description: PHOTO COUPLER MDIP-4 TUBE 100PCSPackaging: Tube Package / Case: 4-DIP (0.400", 10.16mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Supplier Device Package: 4-MDIP Voltage - Output (Max): 350V Rise / Fall Time (Typ): 18µs, 18µs (Max) Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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| DMTH8028LFVWQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 631 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 631 pF @ 40 V
Qualification: AEC-Q101
на замовлення 2485 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 64.32 грн |
| 10+ | 42.68 грн |
| 100+ | 28.74 грн |
| 500+ | 21.80 грн |
| 1000+ | 19.75 грн |
| DMTH8012LPSW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 53.7A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
Description: MOSFET N-CH 80V 53.7A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 23.24 грн |
| 5000+ | 22.14 грн |
| 7500+ | 19.76 грн |
| DMTH8012LPSW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 53.7A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
Description: MOSFET N-CH 80V 53.7A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
на замовлення 12730 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 79.22 грн |
| 10+ | 54.76 грн |
| 100+ | 36.41 грн |
| 500+ | 26.68 грн |
| 1000+ | 24.27 грн |
| DMT61M5SPSW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.7W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.7W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 58.90 грн |
| DMT61M5SPSW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.7W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.7W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
на замовлення 17071 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 161.58 грн |
| 10+ | 111.41 грн |
| 100+ | 76.52 грн |
| 500+ | 58.12 грн |
| DMP3028LPSW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 1.28W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1421 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 1.28W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1421 pF @ 15 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 13.78 грн |
| 5000+ | 12.17 грн |
| 7500+ | 11.61 грн |
| 12500+ | 10.30 грн |
| DMT35M4LPSW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.9A (Ta), 71.1A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1029 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.9A (Ta), 71.1A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1029 pF @ 15 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 15.75 грн |
| 5000+ | 13.94 грн |
| 7500+ | 13.32 грн |
| 12500+ | 11.84 грн |
| DMTH47M2LPSW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 20 V
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 20 V
на замовлення 122500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 16.15 грн |
| 5000+ | 14.30 грн |
| 7500+ | 13.66 грн |
| 12500+ | 12.15 грн |
| 17500+ | 11.99 грн |
| DMTH4008LPSW-13 |
![]() |
Виробник: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V
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од. на суму грн.
| DMP3021SPSW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V PowerDI506
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 52.7A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1799 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V PowerDI506
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 52.7A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1799 pF @ 15 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 16.53 грн |
| DMP6050SPSW-13 |
![]() |
Виробник: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V
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од. на суму грн.
| DMP3011SPSW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V PowerDI506
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V PowerDI506
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
товару немає в наявності
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од. на суму грн.
| DMTH47M2SPSW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
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| DMP10H088SPSW-13 |
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Виробник: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 50 V
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 50 V
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| DMWSH120H90SM4 |
![]() |
Виробник: Diodes Incorporated
Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 20A, 15V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51.1 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1112 pF @ 1000 V
Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 20A, 15V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51.1 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1112 pF @ 1000 V
на замовлення 120320 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 749.09 грн |
| 30+ | 503.03 грн |
| 120+ | 463.85 грн |
| 510+ | 414.81 грн |
| DMWSH120H90SM3Q |
![]() |
Виробник: Diodes Incorporated
Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 20A, 15V
Power Dissipation (Max): 246W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 50.9 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 1000 V
Qualification: AEC-Q101
Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 20A, 15V
Power Dissipation (Max): 246W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 50.9 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 1195 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 919.30 грн |
| 30+ | 607.27 грн |
| 120+ | 570.88 грн |
| 510+ | 525.24 грн |
| DMWSH120H90SCT7-13 |
![]() |
Виробник: Diodes Incorporated
Description: SICFET N-CH 1200V TO-247
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
Description: SICFET N-CH 1200V TO-247
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
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| DMWSH120H90SCT7Q-13 |
![]() |
Виробник: Diodes Incorporated
Description: SICFET N-CH 1200V TO-247
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
Qualification: AEC-Q101
Description: SICFET N-CH 1200V TO-247
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
Qualification: AEC-Q101
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| DMWSH120H90SCT7 |
![]() |
Виробник: Diodes Incorporated
Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 429.27 грн |
| DMWSH120H90SCT7Q |
![]() |
Виробник: Diodes Incorporated
Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
Qualification: AEC-Q101
Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 1450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 560.49 грн |
| PI5A3166CEX |
![]() |
Виробник: Diodes Incorporated
Description: IC SW SPST-NOX1 1.2OHM SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.2Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: SC-70-5
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 35pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 2ns, 5ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 20nA
Number of Circuits: 1
Description: IC SW SPST-NOX1 1.2OHM SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.2Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: SC-70-5
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 35pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 2ns, 5ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 20nA
Number of Circuits: 1
на замовлення 273000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.87 грн |
| 6000+ | 9.23 грн |
| 9000+ | 9.10 грн |
| 15000+ | 8.39 грн |
| 21000+ | 8.31 грн |
| 30000+ | 8.23 грн |
| 75000+ | 7.92 грн |
| PI5A3166CEX |
![]() |
Виробник: Diodes Incorporated
Description: IC SW SPST-NOX1 1.2OHM SC70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.2Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: SC-70-5
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 35pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 2ns, 5ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 20nA
Number of Circuits: 1
Description: IC SW SPST-NOX1 1.2OHM SC70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.2Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: SC-70-5
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 35pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 2ns, 5ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 20nA
Number of Circuits: 1
на замовлення 275938 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 23.53 грн |
| 20+ | 15.64 грн |
| 25+ | 13.90 грн |
| 100+ | 11.25 грн |
| 250+ | 10.39 грн |
| 500+ | 9.87 грн |
| 1000+ | 9.29 грн |
| FN2000118 |
![]() |
Виробник: Diodes Incorporated
Description: XTAL OSC XO 20.0000MHZ CMOS SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 15mA
Supplier Device Package: 4-SMD (7x5)
Height - Seated (Max): 0.071" (1.80mm)
Frequency: 20 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 20.0000MHZ CMOS SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 15mA
Supplier Device Package: 4-SMD (7x5)
Height - Seated (Max): 0.071" (1.80mm)
Frequency: 20 MHz
Base Resonator: Crystal
на замовлення 970 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 70.60 грн |
| 10+ | 59.14 грн |
| 50+ | 53.61 грн |
| 100+ | 48.22 грн |
| 500+ | 43.72 грн |
| DMN6041SVTQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 41V~60V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
Qualification: AEC-Q101
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| DMN6041SVT-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Power Dissipation (Max): 900mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
Description: MOSFET BVDSS: 41V~60V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Power Dissipation (Max): 900mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
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| DMN6041SVTQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 41V~60V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
Qualification: AEC-Q101
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 11.13 грн |
| 6000+ | 9.81 грн |
| 9000+ | 9.35 грн |
| 15000+ | 8.29 грн |
| SDT12A120P5Q-13 |
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Виробник: Diodes Incorporated
Description: SCHOTTKY RECTIFIER PDI5
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q101
Description: SCHOTTKY RECTIFIER PDI5
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q101
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| SDT10H50P5-7 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 10A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 50 V
Description: DIODE SCHOTTKY 50V 10A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 50 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 12.63 грн |
| SDT10H50P5-7D |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 10A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 50 V
Description: DIODE SCHOTTKY 50V 10A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 50 V
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| B2100AQ-13 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 2A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 8 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 2A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 8 µA @ 100 V
Qualification: AEC-Q101
на замовлення 4793 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.20 грн |
| 11+ | 29.84 грн |
| 100+ | 19.19 грн |
| 500+ | 13.71 грн |
| 1000+ | 12.33 грн |
| 2000+ | 11.16 грн |
| GBJ15005 |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 50V 15A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 15A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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| GBJ15005-F |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 50V 15A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 15A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 207.08 грн |
| 15+ | 120.90 грн |
| 105+ | 89.16 грн |
| 510+ | 68.11 грн |
| 1005+ | 63.10 грн |
| DF15005S |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 50V 1.5A DF-S
Packaging: Bulk
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 1.5A DF-S
Packaging: Bulk
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 3484 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 89.42 грн |
| 50+ | 48.52 грн |
| 100+ | 35.83 грн |
| 500+ | 22.26 грн |
| 1000+ | 20.88 грн |
| 2000+ | 20.58 грн |
| AL8866SP-13 |
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Виробник: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 400kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 105°C (TA)
Applications: LED Lighting
Internal Switch(s): Yes
Topology: SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-SO-EP
Dimming: Analog, PWM
Voltage - Supply (Min): 4.7V
Voltage - Supply (Max): 85V
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 400kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 105°C (TA)
Applications: LED Lighting
Internal Switch(s): Yes
Topology: SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-SO-EP
Dimming: Analog, PWM
Voltage - Supply (Min): 4.7V
Voltage - Supply (Max): 85V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 33.53 грн |
| AL8866SP-13 |
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Виробник: Diodes Incorporated
Description: IC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 400kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 105°C (TA)
Applications: LED Lighting
Internal Switch(s): Yes
Topology: SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-SO-EP
Dimming: Analog, PWM
Voltage - Supply (Min): 4.7V
Voltage - Supply (Max): 85V
Description: IC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 400kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 105°C (TA)
Applications: LED Lighting
Internal Switch(s): Yes
Topology: SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-SO-EP
Dimming: Analog, PWM
Voltage - Supply (Min): 4.7V
Voltage - Supply (Max): 85V
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 70.60 грн |
| 10+ | 48.72 грн |
| 25+ | 43.99 грн |
| 100+ | 36.41 грн |
| 250+ | 34.08 грн |
| 500+ | 32.68 грн |
| 1000+ | 31.00 грн |
| FL2400128 |
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Виробник: Diodes Incorporated
Description: CRYSTAL 24.0000MHZ 10PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 24 MHz
Description: CRYSTAL 24.0000MHZ 10PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 24 MHz
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| FL2400128W |
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Виробник: Diodes Incorporated
Description: CRYSTAL SURFACE MOUNT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
Description: CRYSTAL SURFACE MOUNT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
на замовлення 243000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 23.37 грн |
| FL2400129 |
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Виробник: Diodes Incorporated
Description: CRYSTAL 24.0000MHZ 20PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 24 MHz
Description: CRYSTAL 24.0000MHZ 20PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 24 MHz
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| FL6240012Q |
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Виробник: Diodes Incorporated
Description: CRYSTAL 62.4000MHZ 6PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 6pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 62.4 MHz
Description: CRYSTAL 62.4000MHZ 6PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 6pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 62.4 MHz
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| SDM02M30DCP3-7 |
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Виробник: Diodes Incorporated
Description: DIODE ARR SCHOT 30V X3-DSN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.99 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400mA
Supplier Device Package: X3-DSN1006-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Description: DIODE ARR SCHOT 30V X3-DSN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.99 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400mA
Supplier Device Package: X3-DSN1006-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
на замовлення 158000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 22.75 грн |
| 23+ | 13.37 грн |
| 100+ | 7.69 грн |
| 500+ | 5.33 грн |
| 1000+ | 4.58 грн |
| 2000+ | 4.20 грн |
| AH3234Q-P-B |
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Виробник: Diodes Incorporated
Description: HALL UNIPOLAR SWITCH SIP-3 BULK
Packaging: Bulk
Features: Temperature Compensated
Package / Case: 3-SIP
Output Type: Switch
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch, Unipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 27V
Technology: Hall Effect
Sensing Range: 7mT Trip, 0.3mT Release
Current - Supply (Max): 6.9mA
Supplier Device Package: 3-SIP
Test Condition: -40°C ~ 150°C
Description: HALL UNIPOLAR SWITCH SIP-3 BULK
Packaging: Bulk
Features: Temperature Compensated
Package / Case: 3-SIP
Output Type: Switch
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch, Unipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 27V
Technology: Hall Effect
Sensing Range: 7mT Trip, 0.3mT Release
Current - Supply (Max): 6.9mA
Supplier Device Package: 3-SIP
Test Condition: -40°C ~ 150°C
на замовлення 885 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 36.87 грн |
| 10+ | 31.12 грн |
| 11+ | 29.38 грн |
| 25+ | 25.66 грн |
| 50+ | 24.40 грн |
| 100+ | 23.25 грн |
| 500+ | 20.59 грн |
| AH3231Q-P-B |
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Виробник: Diodes Incorporated
Description: Hall Unipolar Switch SIP-3 BULK
Packaging: Bulk
Features: Temperature Compensated
Package / Case: 3-SIP
Output Type: Current Source
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 27V
Technology: Hall Effect
Sensing Range: 9mT Trip, 7mT Release
Current - Supply (Max): 6.9mA
Supplier Device Package: 3-SIP
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
Description: Hall Unipolar Switch SIP-3 BULK
Packaging: Bulk
Features: Temperature Compensated
Package / Case: 3-SIP
Output Type: Current Source
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 27V
Technology: Hall Effect
Sensing Range: 9mT Trip, 7mT Release
Current - Supply (Max): 6.9mA
Supplier Device Package: 3-SIP
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 975 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 36.87 грн |
| 10+ | 31.12 грн |
| 11+ | 29.38 грн |
| 25+ | 25.66 грн |
| 50+ | 24.40 грн |
| 100+ | 23.25 грн |
| 500+ | 20.59 грн |
| GBU806 |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 600V 8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1PHASE 600V 8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 66093 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 145.90 грн |
| 20+ | 79.05 грн |
| 100+ | 60.51 грн |
| 500+ | 45.10 грн |
| 1000+ | 41.34 грн |
| 2000+ | 38.18 грн |
| 5000+ | 34.19 грн |
| 10000+ | 32.11 грн |
| FUS2MD_HF |
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Виробник: Diodes Incorporated
Description: DIODE STANDARD 1000V 2A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-221AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE STANDARD 1000V 2A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-221AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.16 грн |
| 18+ | 17.45 грн |
| 100+ | 9.75 грн |
| 500+ | 6.81 грн |
| 1000+ | 5.88 грн |
| 2000+ | 5.42 грн |
| 5000+ | 4.65 грн |
| DGD05463M10-13 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE DRVR HALF-BRIDGE 10MSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 14V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 50 V
Supplier Device Package: 10-MSOP
Rise / Fall Time (Typ): 17ns, 12ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 10MSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 14V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 50 V
Supplier Device Package: 10-MSOP
Rise / Fall Time (Typ): 17ns, 12ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 17.58 грн |
| DGD05463M10-13 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE DRVR HALF-BRIDGE 10MSOP
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 14V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 50 V
Supplier Device Package: 10-MSOP
Rise / Fall Time (Typ): 17ns, 12ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 10MSOP
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 14V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 50 V
Supplier Device Package: 10-MSOP
Rise / Fall Time (Typ): 17ns, 12ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PI7C9X2G404ELQZXAEX |
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Виробник: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 136AQFN
Packaging: Tape & Reel (TR)
Package / Case: 136-VFQFN Dual Rows, Exposed Pad
Mounting Type: Surface Mount
Interface: PCI Express
Applications: Packet Switch, 4-Port/4-Lane
Supplier Device Package: 136-aQFN (10x10)
Grade: Automotive
Qualification: AEC-Q100
Description: IC INTERFACE SPECIALIZED 136AQFN
Packaging: Tape & Reel (TR)
Package / Case: 136-VFQFN Dual Rows, Exposed Pad
Mounting Type: Surface Mount
Interface: PCI Express
Applications: Packet Switch, 4-Port/4-Lane
Supplier Device Package: 136-aQFN (10x10)
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| DDZ9686-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 3.9V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Description: DIODE ZENER 3.9V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.01 грн |
| DDZ9686-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 3.9V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Description: DIODE ZENER 3.9V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
на замовлення 3930 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 19.61 грн |
| 27+ | 11.41 грн |
| 100+ | 7.15 грн |
| 500+ | 4.93 грн |
| 1000+ | 4.35 грн |
| SMA6J5.0AQ-13 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 5VWM 9.2VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5VWM 9.2VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DPC817S-A-TR |
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Виробник: Diodes Incorporated
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 35V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 35V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 852665 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 12.55 грн |
| 37+ | 8.38 грн |
| 100+ | 5.85 грн |
| 500+ | 4.38 грн |
| 1000+ | 4.01 грн |
| DPC851S-TR |
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Виробник: Diodes Incorporated
Description: PHOTO COUPLER SL-4 T&R 2K
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTO COUPLER SL-4 T&R 2K
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
В кошику
од. на суму грн.
| DPC851S-TR |
![]() |
Виробник: Diodes Incorporated
Description: PHOTO COUPLER SL-4 T&R 2K
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTO COUPLER SL-4 T&R 2K
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 1937 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.45 грн |
| 17+ | 17.98 грн |
| 100+ | 12.76 грн |
| 500+ | 9.78 грн |
| 1000+ | 9.05 грн |
| DPC851D-TU |
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Виробник: Diodes Incorporated
Description: PHOTO COUPLER DIP-4 TUBE 100PCS
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 350V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTO COUPLER DIP-4 TUBE 100PCS
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 350V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 2427 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 26.67 грн |
| 18+ | 17.75 грн |
| 100+ | 12.64 грн |
| 500+ | 9.69 грн |
| 1000+ | 8.97 грн |
| 2000+ | 8.36 грн |
| DPC851D-TU-V |
![]() |
Виробник: Diodes Incorporated
Description: PHOTO COUPLER DIP-4 TUBE 100PCS
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 350V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTO COUPLER DIP-4 TUBE 100PCS
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 350V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 60 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.45 грн |
| 17+ | 17.98 грн |
| DPC851S-TR-V |
![]() |
Виробник: Diodes Incorporated
Description: PHOTO COUPLER SL-4 T&R 2K
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTO COUPLER SL-4 T&R 2K
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 9.34 грн |
| DPC851S-TR-V |
![]() |
Виробник: Diodes Incorporated
Description: PHOTO COUPLER SL-4 T&R 2K
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTO COUPLER SL-4 T&R 2K
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.45 грн |
| 17+ | 17.98 грн |
| 100+ | 12.76 грн |
| 500+ | 9.78 грн |
| 1000+ | 9.05 грн |
| DPC851W-TU-V |
![]() |
Виробник: Diodes Incorporated
Description: PHOTO COUPLER MDIP-4 TUBE 100PCS
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Supplier Device Package: 4-MDIP
Voltage - Output (Max): 350V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTO COUPLER MDIP-4 TUBE 100PCS
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Supplier Device Package: 4-MDIP
Voltage - Output (Max): 350V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
В кошику
од. на суму грн.
| DPC851W-TU |
![]() |
Виробник: Diodes Incorporated
Description: PHOTO COUPLER MDIP-4 TUBE 100PCS
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Supplier Device Package: 4-MDIP
Voltage - Output (Max): 350V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTO COUPLER MDIP-4 TUBE 100PCS
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Supplier Device Package: 4-MDIP
Voltage - Output (Max): 350V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.45 грн |
| 17+ | 18.43 грн |
| 100+ | 13.16 грн |























