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ADTA114YUAQ-13 ADTA114YUAQ-13 Diodes Incorporated ADTA114YUAQ.pdf Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 150000 шт:
термін постачання 21-31 дні (днів)
10000+2.85 грн
20000+2.49 грн
30000+2.36 грн
50000+2.08 грн
70000+2.00 грн
100000+1.92 грн
Мінімальне замовлення: 10000
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ADTA114YUAQ-7 ADTA114YUAQ-7 Diodes Incorporated ADTA114YUAQ.pdf Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
товару немає в наявності
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G83270040 G83270040 Diodes Incorporated Description: XTAL PLASTIC SMD3215 SMD
Packaging: Tape & Reel (TR)
товару немає в наявності
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G83270031 G83270031 Diodes Incorporated Description: XTAL PLASTIC SMD3215 SMD
Packaging: Tape & Reel (TR)
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G83270042 G83270042 Diodes Incorporated Description: XTAL PLASTIC SMD3215 SMD
Packaging: Tape & Reel (TR)
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G83270033 G83270033 Diodes Incorporated Description: XTAL PLASTIC SMD3215 SMD
Packaging: Tape & Reel (TR)
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GBJ1506 GBJ1506 Diodes Incorporated ds21219.pdf Description: BRIDGE RECT 1PHASE 600V 15A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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BC857CFSWQ-7 Diodes Incorporated BC856AFSWQ-BC857CFSWQ.pdf Description: TRANS PNP 45V 0.1A UDFN14123/SWP
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: U-DFN1412-3/SWP (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 450 mW
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
5000+2.23 грн
10000+2.08 грн
15000+2.04 грн
Мінімальне замовлення: 5000
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SMBJ78AQ-13-F SMBJ78AQ-13-F Diodes Incorporated ds40740.pdf Description: TVS DIODE 78VWM 126VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.7A
Voltage - Reverse Standoff (Typ): 78V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.7V
Voltage - Clamping (Max) @ Ipp: 126V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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FCX619-13R FCX619-13R Diodes Incorporated Description: TRANS NPN 50V 3A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 100mA, 2.75A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Frequency - Transition: 165MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 700 mW
товару немає в наявності
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ZXMS6004SGQTA ZXMS6004SGQTA Diodes Incorporated ZXMS6004SGQ.pdf Description: LOW SIDE INTELLIFET SOT223 T&R 1
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Voltage - Load: 0V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1980 шт:
термін постачання 21-31 дні (днів)
4+102.80 грн
10+62.62 грн
100+41.72 грн
500+30.73 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
ZXMS6004SG-13 ZXMS6004SG-13 Diodes Incorporated ZXMS6004SG.pdf Description: IC PWR GEN PURP N-CH 1:1 SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
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ZXMS6004SGQ-13 ZXMS6004SGQ-13 Diodes Incorporated ZXMS6004SGQ.pdf Description: LOW SIDE INTELLIFET SOT223 T&R 2
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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SDM40E20LA-7 SDM40E20LA-7 Diodes Incorporated SDM40E20L_S_C_A.pdf Description: DIODE ARR SCHOTT 20V 400MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 310 mV @ 100 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
3000+14.72 грн
6000+13.11 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SDM40E20LAQ-7 SDM40E20LAQ-7 Diodes Incorporated SDM40E20LSQ-AQ.pdf Description: DIODE ARR SCHOTT 20V 400MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 310 mV @ 100 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
Qualification: AEC-Q101
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SDM40E20LAQ-7 SDM40E20LAQ-7 Diodes Incorporated SDM40E20LSQ-AQ.pdf Description: DIODE ARR SCHOTT 20V 400MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 310 mV @ 100 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
Qualification: AEC-Q101
на замовлення 578 шт:
термін постачання 21-31 дні (днів)
8+38.94 грн
13+23.17 грн
100+14.80 грн
500+10.48 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SDM40E20LA-7-2477 SDM40E20LA-7-2477 Diodes Incorporated Description: DIODE ARR SCHOTT 20V 400MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 400mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 310 mV @ 100 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
товару немає в наявності
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PI3A3899ZTAEX PI3A3899ZTAEX Diodes Incorporated PI3A3899.pdf Description: IC SWITCH DPDT X 2 2.4OHM 16UQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 2.4Ohm
-3db Bandwidth: 330MHz
Supplier Device Package: 16-UQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Charge Injection: 13pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 8ns, 12ns
Channel Capacitance (CS(off), CD(off)): 7pF
Current - Leakage (IS(off)) (Max): 1µA
Number of Circuits: 2
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PI3A3899ZTAEX PI3A3899ZTAEX Diodes Incorporated PI3A3899.pdf Description: IC SWITCH DPDT X 2 2.4OHM 16UQFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 2.4Ohm
-3db Bandwidth: 330MHz
Supplier Device Package: 16-UQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Charge Injection: 13pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 8ns, 12ns
Channel Capacitance (CS(off), CD(off)): 7pF
Current - Leakage (IS(off)) (Max): 1µA
Number of Circuits: 2
на замовлення 2657 шт:
термін постачання 21-31 дні (днів)
6+52.96 грн
10+36.30 грн
25+32.61 грн
100+26.81 грн
250+25.01 грн
500+23.92 грн
1000+23.28 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BC817-25FSW-7 Diodes Incorporated BC817-16FSW-BC817-40FSW.pdf Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: U-DFN1412-3/SWP (Type A)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
товару немає в наявності
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DF02S-T DF02S-T Diodes Incorporated ds17001.pdf Description: BRIDGE RECT 1PHASE 200V 1A DF-S
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
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DF02S-T DF02S-T Diodes Incorporated ds17001.pdf Description: BRIDGE RECT 1PHASE 200V 1A DF-S
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
7+47.51 грн
11+28.35 грн
Мінімальне замовлення: 7
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ABS10_HF ABS10_HF Diodes Incorporated PdfFile_217570.pdf Description: BRIDGE RECT 1PHASE 1KV 1A ABS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
на замовлення 9362 шт:
термін постачання 21-31 дні (днів)
24+13.24 грн
39+7.72 грн
100+4.75 грн
500+3.24 грн
1000+2.85 грн
2000+2.52 грн
Мінімальне замовлення: 24
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UF1003-T UF1003-T Diodes Incorporated UF1001-UF1007.pdf Description: DIODE STANDARD 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 160000 шт:
термін постачання 21-31 дні (днів)
5000+5.60 грн
10000+5.08 грн
15000+5.04 грн
25000+4.45 грн
35000+4.39 грн
50000+4.23 грн
125000+4.08 грн
Мінімальне замовлення: 5000
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BSS138-13-F Diodes Incorporated Description: MOSFET N-CH 50V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
товару немає в наявності
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BSS138-13-F Diodes Incorporated Description: MOSFET N-CH 50V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
на замовлення 6800 шт:
термін постачання 21-31 дні (днів)
20+15.58 грн
34+8.85 грн
100+5.50 грн
500+3.77 грн
1000+3.32 грн
2000+2.93 грн
5000+2.48 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
AP7353D-25FS4-7 AP7353D-25FS4-7 Diodes Incorporated AP7353.pdf Description: IC REG LINEAR 2.5V X2-DFN10104
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 27 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4 (Type B)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Current Limit, Enable
PSRR: 90dB ~ 70dB (100Hz ~ 10kHz)
Voltage Dropout (Max): 0.168V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit
на замовлення 65000 шт:
термін постачання 21-31 дні (днів)
16+19.47 грн
24+12.75 грн
27+11.28 грн
100+9.09 грн
250+8.38 грн
500+7.95 грн
1000+7.47 грн
2500+7.10 грн
Мінімальне замовлення: 16
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DMT3006LFDFQ-13 DMT3006LFDFQ-13 Diodes Incorporated Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 3.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
DMT3006LDV-13 DMT3006LDV-13 Diodes Incorporated DMT3006LDV.pdf Description: MOSFET 2N-CH 30V 25A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 15V
Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
товару немає в наявності
В кошику  од. на суму  грн.
DMT3006LDV-7 DMT3006LDV-7 Diodes Incorporated DMT3006LDV.pdf Description: MOSFET 2N-CH 30V 25A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 15V
Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
2000+18.48 грн
4000+16.35 грн
6000+15.62 грн
10000+13.88 грн
14000+13.57 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
DMTH8028LFVWQ-7 DMTH8028LFVWQ-7 Diodes Incorporated DMTH8028LFVWQ.pdf Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 631 pF @ 40 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+19.06 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
DMTH8028LFVWQ-7 DMTH8028LFVWQ-7 Diodes Incorporated DMTH8028LFVWQ.pdf Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 631 pF @ 40 V
Qualification: AEC-Q101
на замовлення 2485 шт:
термін постачання 21-31 дні (днів)
5+63.86 грн
10+42.37 грн
100+28.54 грн
500+21.65 грн
1000+19.61 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
DMTH8012LPSW-13 DMTH8012LPSW-13 Diodes Incorporated DMTH8012LPSW.pdf Description: MOSFET N-CH 80V 53.7A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
2500+23.08 грн
5000+21.99 грн
7500+19.62 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMTH8012LPSW-13 DMTH8012LPSW-13 Diodes Incorporated DMTH8012LPSW.pdf Description: MOSFET N-CH 80V 53.7A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
на замовлення 12730 шт:
термін постачання 21-31 дні (днів)
4+78.66 грн
10+54.37 грн
100+36.16 грн
500+26.49 грн
1000+24.09 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DMT61M5SPSW-13 DMT61M5SPSW-13 Diodes Incorporated DMT61M5SPSW.pdf Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.7W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
2500+58.48 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMT61M5SPSW-13 DMT61M5SPSW-13 Diodes Incorporated DMT61M5SPSW.pdf Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.7W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
на замовлення 17071 шт:
термін постачання 21-31 дні (днів)
2+160.43 грн
10+110.62 грн
100+75.98 грн
500+57.71 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DMP3028LPSW-13 DMP3028LPSW-13 Diodes Incorporated DMP3028LPSW.pdf Description: MOSFET BVDSS: 25V~30V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 1.28W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1421 pF @ 15 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
2500+13.68 грн
5000+12.08 грн
7500+11.52 грн
12500+10.23 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMT35M4LPSW-13 DMT35M4LPSW-13 Diodes Incorporated DMT35M4LPSW.pdf Description: MOSFET BVDSS: 25V~30V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.9A (Ta), 71.1A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1029 pF @ 15 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
2500+15.64 грн
5000+13.84 грн
7500+13.22 грн
12500+11.75 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMTH47M2LPSW-13 DMTH47M2LPSW-13 Diodes Incorporated DMTH47M2LPSW.pdf Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 20 V
на замовлення 122500 шт:
термін постачання 21-31 дні (днів)
2500+16.03 грн
5000+14.20 грн
7500+13.57 грн
12500+12.06 грн
17500+11.91 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMTH4008LPSW-13 DMTH4008LPSW-13 Diodes Incorporated DMTH4008LPSW.pdf Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
DMP3021SPSW-13 DMP3021SPSW-13 Diodes Incorporated DMP3021SPSW.pdf Description: MOSFET BVDSS: 25V~30V PowerDI506
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 52.7A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1799 pF @ 15 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+16.42 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMP6050SPSW-13 DMP6050SPSW-13 Diodes Incorporated DMP6050SPSW.pdf Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
DMP3011SPSW-13 DMP3011SPSW-13 Diodes Incorporated DMP3011SPSW.pdf Description: MOSFET BVDSS: 25V~30V PowerDI506
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
DMTH47M2SPSW-13 DMTH47M2SPSW-13 Diodes Incorporated DMTH47M2SPSW.pdf Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
DMP10H088SPSW-13 DMP10H088SPSW-13 Diodes Incorporated DMP10H088SPSW.pdf Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
DMWSH120H90SM4 DMWSH120H90SM4 Diodes Incorporated DMWSH120H90SM4.pdf Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 20A, 15V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51.1 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1112 pF @ 1000 V
на замовлення 120320 шт:
термін постачання 21-31 дні (днів)
1+743.75 грн
30+499.45 грн
120+460.55 грн
510+411.85 грн
В кошику  од. на суму  грн.
DMWSH120H90SM3Q DMWSH120H90SM3Q Diodes Incorporated DMWSH120H90SM3Q.pdf Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 20A, 15V
Power Dissipation (Max): 246W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 50.9 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 1195 шт:
термін постачання 21-31 дні (днів)
1+912.75 грн
30+602.94 грн
120+566.81 грн
510+521.50 грн
В кошику  од. на суму  грн.
DMWSH120H90SCT7-13 Diodes Incorporated DMWSH120H90SCT7.pdf Description: SICFET N-CH 1200V TO-247
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
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В кошику  од. на суму  грн.
DMWSH120H90SCT7Q-13 Diodes Incorporated DMWSH120H90SCT7Q.pdf Description: SICFET N-CH 1200V TO-247
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
Qualification: AEC-Q101
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DMWSH120H90SCT7 Diodes Incorporated DMWSH120H90SCT7.pdf Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
50+426.21 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
DMWSH120H90SCT7Q Diodes Incorporated DMWSH120H90SCT7Q.pdf Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 1450 шт:
термін постачання 21-31 дні (днів)
50+556.50 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
PI5A3166CEX PI5A3166CEX Diodes Incorporated PI5A3166.pdf Description: IC SW SPST-NOX1 1.2OHM SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.2Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: SC-70-5
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 35pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 2ns, 5ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 20nA
Number of Circuits: 1
на замовлення 273000 шт:
термін постачання 21-31 дні (днів)
3000+9.80 грн
6000+9.17 грн
9000+9.03 грн
15000+8.33 грн
21000+8.25 грн
30000+8.17 грн
75000+7.87 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
PI5A3166CEX PI5A3166CEX Diodes Incorporated PI5A3166.pdf Description: IC SW SPST-NOX1 1.2OHM SC70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.2Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: SC-70-5
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 35pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 2ns, 5ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 20nA
Number of Circuits: 1
на замовлення 275938 шт:
термін постачання 21-31 дні (днів)
14+23.36 грн
20+15.52 грн
25+13.80 грн
100+11.17 грн
250+10.32 грн
500+9.80 грн
1000+9.23 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
FN2000118 FN2000118 Diodes Incorporated FN_3-3V.pdf Description: XTAL OSC XO 20.0000MHZ CMOS SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 15mA
Supplier Device Package: 4-SMD (7x5)
Height - Seated (Max): 0.071" (1.80mm)
Frequency: 20 MHz
Base Resonator: Crystal
на замовлення 970 шт:
термін постачання 21-31 дні (днів)
5+70.09 грн
10+58.72 грн
50+53.23 грн
100+47.88 грн
500+43.41 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
DMN6041SVTQ-13 DMN6041SVTQ-13 Diodes Incorporated DMN6041SVTQ.pdf Description: MOSFET BVDSS: 41V~60V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
Qualification: AEC-Q101
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DMN6041SVT-7 DMN6041SVT-7 Diodes Incorporated DMN6041SVT.pdf Description: MOSFET BVDSS: 41V~60V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Power Dissipation (Max): 900mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
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DMN6041SVTQ-7 DMN6041SVTQ-7 Diodes Incorporated DMN6041SVTQ.pdf Description: MOSFET BVDSS: 41V~60V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
Qualification: AEC-Q101
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
3000+11.06 грн
6000+9.74 грн
9000+9.29 грн
15000+8.23 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SDT12A120P5Q-13 Diodes Incorporated SDT12A120P5Q.pdf Description: SCHOTTKY RECTIFIER PDI5
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q101
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SDT10H50P5-7 SDT10H50P5-7 Diodes Incorporated SDT10H50P5.pdf Description: DIODE SCHOTTKY 50V 10A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 50 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+12.54 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
SDT10H50P5-7D SDT10H50P5-7D Diodes Incorporated SDT10H50P5.pdf Description: DIODE SCHOTTKY 50V 10A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 50 V
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ADTA114YUAQ-13 ADTA114YUAQ.pdf
ADTA114YUAQ-13
Виробник: Diodes Incorporated
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 150000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+2.85 грн
20000+2.49 грн
30000+2.36 грн
50000+2.08 грн
70000+2.00 грн
100000+1.92 грн
Мінімальне замовлення: 10000
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ADTA114YUAQ-7 ADTA114YUAQ.pdf
ADTA114YUAQ-7
Виробник: Diodes Incorporated
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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G83270040
G83270040
Виробник: Diodes Incorporated
Description: XTAL PLASTIC SMD3215 SMD
Packaging: Tape & Reel (TR)
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G83270031
G83270031
Виробник: Diodes Incorporated
Description: XTAL PLASTIC SMD3215 SMD
Packaging: Tape & Reel (TR)
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G83270042
G83270042
Виробник: Diodes Incorporated
Description: XTAL PLASTIC SMD3215 SMD
Packaging: Tape & Reel (TR)
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G83270033
G83270033
Виробник: Diodes Incorporated
Description: XTAL PLASTIC SMD3215 SMD
Packaging: Tape & Reel (TR)
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GBJ1506 ds21219.pdf
GBJ1506
Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 600V 15A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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BC857CFSWQ-7 BC856AFSWQ-BC857CFSWQ.pdf
Виробник: Diodes Incorporated
Description: TRANS PNP 45V 0.1A UDFN14123/SWP
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: U-DFN1412-3/SWP (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 450 mW
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+2.23 грн
10000+2.08 грн
15000+2.04 грн
Мінімальне замовлення: 5000
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SMBJ78AQ-13-F ds40740.pdf
SMBJ78AQ-13-F
Виробник: Diodes Incorporated
Description: TVS DIODE 78VWM 126VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.7A
Voltage - Reverse Standoff (Typ): 78V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.7V
Voltage - Clamping (Max) @ Ipp: 126V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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FCX619-13R
FCX619-13R
Виробник: Diodes Incorporated
Description: TRANS NPN 50V 3A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 100mA, 2.75A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Frequency - Transition: 165MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 700 mW
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ZXMS6004SGQTA ZXMS6004SGQ.pdf
ZXMS6004SGQTA
Виробник: Diodes Incorporated
Description: LOW SIDE INTELLIFET SOT223 T&R 1
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Voltage - Load: 0V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+102.80 грн
10+62.62 грн
100+41.72 грн
500+30.73 грн
Мінімальне замовлення: 4
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ZXMS6004SG-13 ZXMS6004SG.pdf
ZXMS6004SG-13
Виробник: Diodes Incorporated
Description: IC PWR GEN PURP N-CH 1:1 SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
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ZXMS6004SGQ-13 ZXMS6004SGQ.pdf
ZXMS6004SGQ-13
Виробник: Diodes Incorporated
Description: LOW SIDE INTELLIFET SOT223 T&R 2
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Qualification: AEC-Q101
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SDM40E20LA-7 SDM40E20L_S_C_A.pdf
SDM40E20LA-7
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOTT 20V 400MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 310 mV @ 100 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+14.72 грн
6000+13.11 грн
Мінімальне замовлення: 3000
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SDM40E20LAQ-7 SDM40E20LSQ-AQ.pdf
SDM40E20LAQ-7
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOTT 20V 400MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 310 mV @ 100 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
Qualification: AEC-Q101
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SDM40E20LAQ-7 SDM40E20LSQ-AQ.pdf
SDM40E20LAQ-7
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOTT 20V 400MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 310 mV @ 100 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
Qualification: AEC-Q101
на замовлення 578 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+38.94 грн
13+23.17 грн
100+14.80 грн
500+10.48 грн
Мінімальне замовлення: 8
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SDM40E20LA-7-2477
SDM40E20LA-7-2477
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOTT 20V 400MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 400mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 310 mV @ 100 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
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PI3A3899ZTAEX PI3A3899.pdf
PI3A3899ZTAEX
Виробник: Diodes Incorporated
Description: IC SWITCH DPDT X 2 2.4OHM 16UQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 2.4Ohm
-3db Bandwidth: 330MHz
Supplier Device Package: 16-UQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Charge Injection: 13pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 8ns, 12ns
Channel Capacitance (CS(off), CD(off)): 7pF
Current - Leakage (IS(off)) (Max): 1µA
Number of Circuits: 2
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PI3A3899ZTAEX PI3A3899.pdf
PI3A3899ZTAEX
Виробник: Diodes Incorporated
Description: IC SWITCH DPDT X 2 2.4OHM 16UQFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 2.4Ohm
-3db Bandwidth: 330MHz
Supplier Device Package: 16-UQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Charge Injection: 13pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 8ns, 12ns
Channel Capacitance (CS(off), CD(off)): 7pF
Current - Leakage (IS(off)) (Max): 1µA
Number of Circuits: 2
на замовлення 2657 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+52.96 грн
10+36.30 грн
25+32.61 грн
100+26.81 грн
250+25.01 грн
500+23.92 грн
1000+23.28 грн
Мінімальне замовлення: 6
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BC817-25FSW-7 BC817-16FSW-BC817-40FSW.pdf
Виробник: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: U-DFN1412-3/SWP (Type A)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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DF02S-T ds17001.pdf
DF02S-T
Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 200V 1A DF-S
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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DF02S-T ds17001.pdf
DF02S-T
Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 200V 1A DF-S
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+47.51 грн
11+28.35 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
ABS10_HF PdfFile_217570.pdf
ABS10_HF
Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 1A ABS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
на замовлення 9362 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
24+13.24 грн
39+7.72 грн
100+4.75 грн
500+3.24 грн
1000+2.85 грн
2000+2.52 грн
Мінімальне замовлення: 24
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UF1003-T UF1001-UF1007.pdf
UF1003-T
Виробник: Diodes Incorporated
Description: DIODE STANDARD 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 160000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+5.60 грн
10000+5.08 грн
15000+5.04 грн
25000+4.45 грн
35000+4.39 грн
50000+4.23 грн
125000+4.08 грн
Мінімальне замовлення: 5000
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BSS138-13-F
Виробник: Diodes Incorporated
Description: MOSFET N-CH 50V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
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BSS138-13-F
Виробник: Diodes Incorporated
Description: MOSFET N-CH 50V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
на замовлення 6800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+15.58 грн
34+8.85 грн
100+5.50 грн
500+3.77 грн
1000+3.32 грн
2000+2.93 грн
5000+2.48 грн
Мінімальне замовлення: 20
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AP7353D-25FS4-7 AP7353.pdf
AP7353D-25FS4-7
Виробник: Diodes Incorporated
Description: IC REG LINEAR 2.5V X2-DFN10104
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 27 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4 (Type B)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Current Limit, Enable
PSRR: 90dB ~ 70dB (100Hz ~ 10kHz)
Voltage Dropout (Max): 0.168V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit
на замовлення 65000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
16+19.47 грн
24+12.75 грн
27+11.28 грн
100+9.09 грн
250+8.38 грн
500+7.95 грн
1000+7.47 грн
2500+7.10 грн
Мінімальне замовлення: 16
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DMT3006LFDFQ-13
DMT3006LFDFQ-13
Виробник: Diodes Incorporated
Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 3.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Qualification: AEC-Q101
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DMT3006LDV-13 DMT3006LDV.pdf
DMT3006LDV-13
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 25A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 15V
Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
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DMT3006LDV-7 DMT3006LDV.pdf
DMT3006LDV-7
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 25A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 15V
Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+18.48 грн
4000+16.35 грн
6000+15.62 грн
10000+13.88 грн
14000+13.57 грн
Мінімальне замовлення: 2000
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DMTH8028LFVWQ-7 DMTH8028LFVWQ.pdf
DMTH8028LFVWQ-7
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 631 pF @ 40 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+19.06 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
DMTH8028LFVWQ-7 DMTH8028LFVWQ.pdf
DMTH8028LFVWQ-7
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 631 pF @ 40 V
Qualification: AEC-Q101
на замовлення 2485 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+63.86 грн
10+42.37 грн
100+28.54 грн
500+21.65 грн
1000+19.61 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
DMTH8012LPSW-13 DMTH8012LPSW.pdf
DMTH8012LPSW-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 53.7A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+23.08 грн
5000+21.99 грн
7500+19.62 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMTH8012LPSW-13 DMTH8012LPSW.pdf
DMTH8012LPSW-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 53.7A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
на замовлення 12730 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+78.66 грн
10+54.37 грн
100+36.16 грн
500+26.49 грн
1000+24.09 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DMT61M5SPSW-13 DMT61M5SPSW.pdf
DMT61M5SPSW-13
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.7W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+58.48 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMT61M5SPSW-13 DMT61M5SPSW.pdf
DMT61M5SPSW-13
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.7W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
на замовлення 17071 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+160.43 грн
10+110.62 грн
100+75.98 грн
500+57.71 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DMP3028LPSW-13 DMP3028LPSW.pdf
DMP3028LPSW-13
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 1.28W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1421 pF @ 15 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+13.68 грн
5000+12.08 грн
7500+11.52 грн
12500+10.23 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMT35M4LPSW-13 DMT35M4LPSW.pdf
DMT35M4LPSW-13
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.9A (Ta), 71.1A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1029 pF @ 15 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+15.64 грн
5000+13.84 грн
7500+13.22 грн
12500+11.75 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMTH47M2LPSW-13 DMTH47M2LPSW.pdf
DMTH47M2LPSW-13
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 20 V
на замовлення 122500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+16.03 грн
5000+14.20 грн
7500+13.57 грн
12500+12.06 грн
17500+11.91 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMTH4008LPSW-13 DMTH4008LPSW.pdf
DMTH4008LPSW-13
Виробник: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V
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DMP3021SPSW-13 DMP3021SPSW.pdf
DMP3021SPSW-13
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V PowerDI506
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 52.7A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1799 pF @ 15 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+16.42 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMP6050SPSW-13 DMP6050SPSW.pdf
DMP6050SPSW-13
Виробник: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V
товару немає в наявності
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DMP3011SPSW-13 DMP3011SPSW.pdf
DMP3011SPSW-13
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V PowerDI506
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
товару немає в наявності
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DMTH47M2SPSW-13 DMTH47M2SPSW.pdf
DMTH47M2SPSW-13
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
товару немає в наявності
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DMP10H088SPSW-13 DMP10H088SPSW.pdf
DMP10H088SPSW-13
Виробник: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 50 V
товару немає в наявності
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DMWSH120H90SM4 DMWSH120H90SM4.pdf
DMWSH120H90SM4
Виробник: Diodes Incorporated
Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 20A, 15V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51.1 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1112 pF @ 1000 V
на замовлення 120320 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+743.75 грн
30+499.45 грн
120+460.55 грн
510+411.85 грн
В кошику  од. на суму  грн.
DMWSH120H90SM3Q DMWSH120H90SM3Q.pdf
DMWSH120H90SM3Q
Виробник: Diodes Incorporated
Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 20A, 15V
Power Dissipation (Max): 246W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 50.9 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 1195 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+912.75 грн
30+602.94 грн
120+566.81 грн
510+521.50 грн
В кошику  од. на суму  грн.
DMWSH120H90SCT7-13 DMWSH120H90SCT7.pdf
Виробник: Diodes Incorporated
Description: SICFET N-CH 1200V TO-247
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
товару немає в наявності
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DMWSH120H90SCT7Q-13 DMWSH120H90SCT7Q.pdf
Виробник: Diodes Incorporated
Description: SICFET N-CH 1200V TO-247
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
Qualification: AEC-Q101
товару немає в наявності
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DMWSH120H90SCT7 DMWSH120H90SCT7.pdf
Виробник: Diodes Incorporated
Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
50+426.21 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
DMWSH120H90SCT7Q DMWSH120H90SCT7Q.pdf
Виробник: Diodes Incorporated
Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 1450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
50+556.50 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
PI5A3166CEX PI5A3166.pdf
PI5A3166CEX
Виробник: Diodes Incorporated
Description: IC SW SPST-NOX1 1.2OHM SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.2Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: SC-70-5
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 35pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 2ns, 5ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 20nA
Number of Circuits: 1
на замовлення 273000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+9.80 грн
6000+9.17 грн
9000+9.03 грн
15000+8.33 грн
21000+8.25 грн
30000+8.17 грн
75000+7.87 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
PI5A3166CEX PI5A3166.pdf
PI5A3166CEX
Виробник: Diodes Incorporated
Description: IC SW SPST-NOX1 1.2OHM SC70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.2Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: SC-70-5
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 35pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 2ns, 5ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 20nA
Number of Circuits: 1
на замовлення 275938 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+23.36 грн
20+15.52 грн
25+13.80 грн
100+11.17 грн
250+10.32 грн
500+9.80 грн
1000+9.23 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
FN2000118 FN_3-3V.pdf
FN2000118
Виробник: Diodes Incorporated
Description: XTAL OSC XO 20.0000MHZ CMOS SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 15mA
Supplier Device Package: 4-SMD (7x5)
Height - Seated (Max): 0.071" (1.80mm)
Frequency: 20 MHz
Base Resonator: Crystal
на замовлення 970 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+70.09 грн
10+58.72 грн
50+53.23 грн
100+47.88 грн
500+43.41 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
DMN6041SVTQ-13 DMN6041SVTQ.pdf
DMN6041SVTQ-13
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
Qualification: AEC-Q101
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DMN6041SVT-7 DMN6041SVT.pdf
DMN6041SVT-7
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Power Dissipation (Max): 900mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
товару немає в наявності
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DMN6041SVTQ-7 DMN6041SVTQ.pdf
DMN6041SVTQ-7
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
Qualification: AEC-Q101
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+11.06 грн
6000+9.74 грн
9000+9.29 грн
15000+8.23 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SDT12A120P5Q-13 SDT12A120P5Q.pdf
Виробник: Diodes Incorporated
Description: SCHOTTKY RECTIFIER PDI5
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SDT10H50P5-7 SDT10H50P5.pdf
SDT10H50P5-7
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 10A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 50 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+12.54 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
SDT10H50P5-7D SDT10H50P5.pdf
SDT10H50P5-7D
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 10A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
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