Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74629) > Сторінка 690 з 1244
| Фото | Назва | Виробник | Інформація |
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FMC500001Q | Diodes Incorporated |
Description: XTAL OSC XO 125.0000MHZ CMOS SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.081" L x 0.063" W (2.05mm x 1.60mm) Mounting Type: Surface Mount Output: CMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.5V Frequency: 125 MHz Base Resonator: Crystal |
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PI6ULS5V9515AZEEX | Diodes Incorporated |
Description: IC REDRIVER I2C 1CH 400KHZ 8TDFNPackaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Delay Time: 113ns Number of Channels: 2 Mounting Type: Surface Mount Output: 2-Wire Bus Type: Buffer, ReDriver Input: 2-Wire Bus Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.3V ~ 3.6V Applications: I2C Current - Supply: 1.7mA Data Rate (Max): 400kHz Supplier Device Package: 8-TDFN (2x3) Capacitance - Input: 6 pF |
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PI6ULS5V9515AZEEX | Diodes Incorporated |
Description: IC REDRIVER I2C 1CH 400KHZ 8TDFNPackaging: Cut Tape (CT) Package / Case: 8-WFDFN Exposed Pad Delay Time: 113ns Number of Channels: 2 Mounting Type: Surface Mount Output: 2-Wire Bus Type: Buffer, ReDriver Input: 2-Wire Bus Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.3V ~ 3.6V Applications: I2C Current - Supply: 1.7mA Data Rate (Max): 400kHz Supplier Device Package: 8-TDFN (2x3) Capacitance - Input: 6 pF |
на замовлення 1578 шт: термін постачання 21-31 дні (днів) |
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PI6ULS5V9517BZEEX | Diodes Incorporated |
Description: INTERFACE ULS W-DFN2030-8Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Delay Time: 169ns Number of Channels: 2 Mounting Type: Surface Mount Output: 2-Wire Bus Type: Buffer, ReDriver Input: 2-Wire Bus Voltage - Supply: 0.8V ~ 5.5V Applications: I2C Current - Supply: 500µA Data Rate (Max): 400kHz Supplier Device Package: 8-TDFN (2x3) |
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PI3DBV10ZEEX | Diodes Incorporated |
Description: IC VIDEO SWITCH 2X1 12TDFNPackaging: Tape & Reel (TR) Package / Case: 12-WFDFN Exposed Pad Mounting Type: Surface Mount Applications: Video On-State Resistance (Max): 8Ohm -3db Bandwidth: 500MHz Supplier Device Package: 12-TDFN (3.5x3) Voltage - Supply, Single (V+): 3V ~ 3.6V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 1 |
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SDM1M40LP8Q-7 | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 1A UDFN16082Packaging: Tape & Reel (TR) Package / Case: 2-UFDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8.4 ns Technology: Schottky Capacitance @ Vr, F: 25pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: U-DFN1608-2 Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1 A Current - Reverse Leakage @ Vr: 20 µA @ 40 V Qualification: AEC-Q101 |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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SDM1M40LP8Q-7 | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 1A UDFN16082Packaging: Cut Tape (CT) Package / Case: 2-UFDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8.4 ns Technology: Schottky Capacitance @ Vr, F: 25pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: U-DFN1608-2 Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1 A Current - Reverse Leakage @ Vr: 20 µA @ 40 V Qualification: AEC-Q101 |
на замовлення 29848 шт: термін постачання 21-31 дні (днів) |
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D50V0S1U2LP1608-7 | Diodes Incorporated |
Description: TVS DIODE 50VWM 90VC UDFN16082Packaging: Cut Tape (CT) Package / Case: 2-UFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 126pF @ 1MHz Current - Peak Pulse (10/1000µs): 15A Voltage - Reverse Standoff (Typ): 50V Supplier Device Package: U-DFN1608-2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 56V Voltage - Clamping (Max) @ Ipp: 90V Power Line Protection: No |
на замовлення 57300 шт: термін постачання 21-31 дні (днів) |
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SBR1M100BLP-7 | Diodes Incorporated |
Description: BRIDGE RECT 1P 100V 1A DFN3030Packaging: Tape & Reel (TR) Package / Case: 4-PowerUDFN Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Super Barrier Supplier Device Package: U-DFN3030-4 Grade: Automotive Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 820 mV @ 1 A Current - Reverse Leakage @ Vr: 25 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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SBR1M100BLP-7 | Diodes Incorporated |
Description: BRIDGE RECT 1P 100V 1A DFN3030Packaging: Cut Tape (CT) Package / Case: 4-PowerUDFN Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Super Barrier Supplier Device Package: U-DFN3030-4 Grade: Automotive Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 820 mV @ 1 A Current - Reverse Leakage @ Vr: 25 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 22506 шт: термін постачання 21-31 дні (днів) |
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1.5KE82A-B | Diodes Incorporated |
Description: TVS DIODE 70.1VWM 113VC DO201Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 13.3A Voltage - Reverse Standoff (Typ): 70.1V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 77.9V Voltage - Clamping (Max) @ Ipp: 113V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
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DSC06A065LP-13 | Diodes Incorporated |
Description: SIC SBD 650V~1000V T-DFN8080-5 T Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 295pF @ 100mV, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DFN8080 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DSC06A065LP-13 | Diodes Incorporated |
Description: SIC SBD 650V~1000V T-DFN8080-5 T Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 295pF @ 100mV, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DFN8080 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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P6KE250A-B | Diodes Incorporated |
Description: TVS DIODE 214VWM 344VC DO15Packaging: Bulk Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 1.75A Voltage - Reverse Standoff (Typ): 214V Supplier Device Package: DO-15 Unidirectional Channels: 1 Voltage - Breakdown (Min): 237V Voltage - Clamping (Max) @ Ipp: 344V Power - Peak Pulse: 600W Power Line Protection: No |
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B250AE-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 50V 2A SMAPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 75pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 50 V |
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FL2500094 | Diodes Incorporated |
Description: CRYSTAL 25.0000MHZ 8PF SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 8pF Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -20°C ~ 70°C Frequency Stability: ±10ppm Frequency Tolerance: ±10ppm Operating Mode: Fundamental Supplier Device Package: 4-SMD (3.2x2.5) Height - Seated (Max): 0.031" (0.78mm) ESR (Equivalent Series Resistance): 60 Ohms Frequency: 25 MHz |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FL2500094 | Diodes Incorporated |
Description: CRYSTAL 25.0000MHZ 8PF SMDPackaging: Cut Tape (CT) Package / Case: 4-SMD, No Lead Load Capacitance: 8pF Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -20°C ~ 70°C Frequency Stability: ±10ppm Frequency Tolerance: ±10ppm Operating Mode: Fundamental Supplier Device Package: 4-SMD (3.2x2.5) Height - Seated (Max): 0.031" (0.78mm) ESR (Equivalent Series Resistance): 60 Ohms Frequency: 25 MHz |
на замовлення 5207 шт: термін постачання 21-31 дні (днів) |
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FZT956QTA | Diodes Incorporated |
Description: TRANS PNP 200V 2A SOT-223-3Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 275mV @ 400mA, 2A Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V Frequency - Transition: 110MHz Supplier Device Package: SOT-223-3 Grade: Automotive Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 1.6 W Qualification: AEC-Q101 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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HBS410-13 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 1KV 4A HBSPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: HBS Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 980 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 792500 шт: термін постачання 21-31 дні (днів) |
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HBS410-13 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 1KV 4A HBSPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: HBS Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 980 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 794974 шт: термін постачання 21-31 дні (днів) |
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HBS610-13 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 1KV 6A HBSPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: HBS Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 960 mV @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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HBS610-13 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 1KV 6A HBSPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: HBS Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 960 mV @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 9990 шт: термін постачання 21-31 дні (днів) |
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DMT6017LFDF-7 | Diodes Incorporated |
Description: MOSFET N-CH 65V 8.1A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V |
на замовлення 2656 шт: термін постачання 21-31 дні (днів) |
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DMT6013LSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 10A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMT6013LSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 10A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 30 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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DMT6017LDV-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 25.3 PWRDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 25.3 (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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DMT6017LDV-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 25.3 PWRDI3333Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 25.3 (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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DMT6007LFG-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 15A PWRDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DMT6007LFG-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 15A PWRDI3333Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V |
на замовлення 5517 шт: термін постачання 21-31 дні (днів) |
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DMP4016SPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI506Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V Power Dissipation (Max): 3.9W (Ta), 119W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V |
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DMP4016SPSWQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI506Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V Power Dissipation (Max): 3.9W (Ta), 119W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DMT26M0LDG-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 25V 11.6A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.24W (Ta) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 33.8A (Tc), 20.1A (Ta), 52.6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 13V, 4016pF @ 13V Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 2mOhm @ 27A, 10V Gate Charge (Qg) (Max) @ Vgs: 15.9nC @ 10V, 57.4nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA Supplier Device Package: PowerDI3333-8 (Type F) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT26M0LDG-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 25V 11.6A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.24W (Ta) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 33.8A (Tc), 20.1A (Ta), 52.6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 13V, 4016pF @ 13V Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 2mOhm @ 27A, 10V Gate Charge (Qg) (Max) @ Vgs: 15.9nC @ 10V, 57.4nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA Supplier Device Package: PowerDI3333-8 (Type F) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMP3056L-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 4.3A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V Power Dissipation (Max): 1.38W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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DMP3056L-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 4.3A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V Power Dissipation (Max): 1.38W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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ZXTD2090E6TA | Diodes Incorporated |
Description: TRANS 2NPN DUAL 50V 1A SOT-26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.1W Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V Frequency - Transition: 215MHz Supplier Device Package: SOT-26 |
на замовлення 501000 шт: термін постачання 21-31 дні (днів) |
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ZXTD2090E6TA | Diodes Incorporated |
Description: TRANS 2NPN DUAL 50V 1A SOT-26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.1W Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V Frequency - Transition: 215MHz Supplier Device Package: SOT-26 |
на замовлення 501000 шт: термін постачання 21-31 дні (днів) |
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AP22971GD8-7 | Diodes Incorporated |
Description: LOAD SWITCH LOW VOLTAGE X1-WLB19Features: Load Discharge, Power Good, Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 8-XFBGA, WLBGA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: High Side Rds On (Typ): 6.7mOhm Input Type: Non-Inverting Voltage - Load: 0.65V ~ 3.6V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3A Ratio - Input:Output: 1:1 Supplier Device Package: 8-WLP (1.88x0.88) Fault Protection: Over Temperature |
на замовлення 384000 шт: термін постачання 21-31 дні (днів) |
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AP22971GD8-7 | Diodes Incorporated |
Description: LOAD SWITCH LOW VOLTAGE X1-WLB19Features: Load Discharge, Power Good, Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 8-XFBGA, WLBGA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: High Side Rds On (Typ): 6.7mOhm Input Type: Non-Inverting Voltage - Load: 0.65V ~ 3.6V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3A Ratio - Input:Output: 1:1 Supplier Device Package: 8-WLP (1.88x0.88) Fault Protection: Over Temperature |
на замовлення 386985 шт: термін постачання 21-31 дні (днів) |
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PI6CB332004AZLFEX-13R | Diodes Incorporated |
Description: ICPackaging: Tape & Reel (TR) Package / Case: 28-VFQFN Exposed Pad Number of Circuits: 1 Mounting Type: Surface Mount Output: HCSL Type: Fanout Buffer (Distribution) Input: Clock Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.97V ~ 3.63V Ratio - Input:Output: 1:4 Differential - Input:Output: Yes/Yes Supplier Device Package: 28-QFN (4x4) Frequency - Max: 400 MHz |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
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PI6CB332004AZLFEX-13R | Diodes Incorporated |
Description: ICPackaging: Cut Tape (CT) Package / Case: 28-VFQFN Exposed Pad Number of Circuits: 1 Mounting Type: Surface Mount Output: HCSL Type: Fanout Buffer (Distribution) Input: Clock Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.97V ~ 3.63V Ratio - Input:Output: 1:4 Differential - Input:Output: Yes/Yes Supplier Device Package: 28-QFN (4x4) Frequency - Max: 400 MHz |
на замовлення 6925 шт: термін постачання 21-31 дні (днів) |
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SPX2940U-L-5-0 | Diodes Incorporated |
Description: IC REG LINEAR 5V 1A TO220-3Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Voltage - Input (Max): 16V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Min/Fixed): 5V Voltage Dropout (Max): 0.28V @ 1A Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBTA64-7-F-W | Diodes Incorporated |
Description: GENERAL PURPOSE TRANSISTOR SOT23Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBTA63-7-F-W | Diodes Incorporated |
Description: GENERAL PURPOSE TRANSISTOR SOT23Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBTA63-7-F-W | Diodes Incorporated |
Description: GENERAL PURPOSE TRANSISTOR SOT23Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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B230BE-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 30V 2A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 93pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AP9101CAK-CLTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT25Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: SOT-25 Fault Protection: Over Current, Over Voltage |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AP9101CAK6-ALTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: SOT-26 Fault Protection: Over Current, Over Voltage |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AP9101CAK6-ALTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: SOT-26 Fault Protection: Over Current, Over Voltage |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBT4401-13-F-W | Diodes Incorporated |
Description: TRANS NPN 40V 0.6A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 310 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBT4401-13-F-W | Diodes Incorporated |
Description: TRANS NPN 40V 0.6A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 310 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FN6600058 | Diodes Incorporated |
Description: XTAL OSC XO 66.0000MHZ CMOSPackaging: Tape & Reel (TR) Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Output: CMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Frequency: 66 MHz Base Resonator: Crystal |
на замовлення 28000 шт: термін постачання 21-31 дні (днів) |
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FN6600058 | Diodes Incorporated |
Description: XTAL OSC XO 66.0000MHZ CMOSPackaging: Cut Tape (CT) Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Output: CMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Frequency: 66 MHz Base Resonator: Crystal |
на замовлення 28000 шт: термін постачання 21-31 дні (днів) |
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FN6600061 | Diodes Incorporated |
Description: XTAL OSC XO 66.0000MHZ CMOSPackaging: Tape & Reel (TR) Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Output: CMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Frequency: 66 MHz Base Resonator: Crystal |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ZXT951KQTC | Diodes Incorporated |
Description: TRANS PNP 60V 6A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 600mA, 6A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V Frequency - Transition: 120MHz Supplier Device Package: TO-252 (DPAK) Grade: Automotive Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2.1 W Qualification: AEC-Q101 |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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ZXT951KQTC | Diodes Incorporated |
Description: TRANS PNP 60V 6A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 600mA, 6A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V Frequency - Transition: 120MHz Supplier Device Package: TO-252 (DPAK) Grade: Automotive Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2.1 W Qualification: AEC-Q101 |
на замовлення 14811 шт: термін постачання 21-31 дні (днів) |
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BAV16W-7-F-W | Diodes Incorporated |
Description: FAST SWITCHING DIODE SOD123 T&R Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MURS360BQ | Diodes Incorporated |
Description: ICPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Qualification: AEC-Q101 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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| MURS360Q | Diodes Incorporated |
Description: ICPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMC (Type C) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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AP68355QSP-13 | Diodes Incorporated |
Description: DCDC Cont HV Buck SO-8EP T&R 4KPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 3.5A Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Frequency - Switching: 300kHz Voltage - Input (Max): 80V Topology: Buck Supplier Device Package: 8-SO-EP Synchronous Rectifier: Yes Voltage - Output (Max): 50V Voltage - Input (Min): 5.5V Voltage - Output (Min/Fixed): 1.2V Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. |
| FMC500001Q |
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Виробник: Diodes Incorporated
Description: XTAL OSC XO 125.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.081" L x 0.063" W (2.05mm x 1.60mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V
Frequency: 125 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 125.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.081" L x 0.063" W (2.05mm x 1.60mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V
Frequency: 125 MHz
Base Resonator: Crystal
товару немає в наявності
В кошику
од. на суму грн.
| PI6ULS5V9515AZEEX |
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Виробник: Diodes Incorporated
Description: IC REDRIVER I2C 1CH 400KHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Delay Time: 113ns
Number of Channels: 2
Mounting Type: Surface Mount
Output: 2-Wire Bus
Type: Buffer, ReDriver
Input: 2-Wire Bus
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Applications: I2C
Current - Supply: 1.7mA
Data Rate (Max): 400kHz
Supplier Device Package: 8-TDFN (2x3)
Capacitance - Input: 6 pF
Description: IC REDRIVER I2C 1CH 400KHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Delay Time: 113ns
Number of Channels: 2
Mounting Type: Surface Mount
Output: 2-Wire Bus
Type: Buffer, ReDriver
Input: 2-Wire Bus
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Applications: I2C
Current - Supply: 1.7mA
Data Rate (Max): 400kHz
Supplier Device Package: 8-TDFN (2x3)
Capacitance - Input: 6 pF
товару немає в наявності
В кошику
од. на суму грн.
| PI6ULS5V9515AZEEX |
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Виробник: Diodes Incorporated
Description: IC REDRIVER I2C 1CH 400KHZ 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Delay Time: 113ns
Number of Channels: 2
Mounting Type: Surface Mount
Output: 2-Wire Bus
Type: Buffer, ReDriver
Input: 2-Wire Bus
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Applications: I2C
Current - Supply: 1.7mA
Data Rate (Max): 400kHz
Supplier Device Package: 8-TDFN (2x3)
Capacitance - Input: 6 pF
Description: IC REDRIVER I2C 1CH 400KHZ 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Delay Time: 113ns
Number of Channels: 2
Mounting Type: Surface Mount
Output: 2-Wire Bus
Type: Buffer, ReDriver
Input: 2-Wire Bus
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Applications: I2C
Current - Supply: 1.7mA
Data Rate (Max): 400kHz
Supplier Device Package: 8-TDFN (2x3)
Capacitance - Input: 6 pF
на замовлення 1578 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 83.98 грн |
| PI6ULS5V9517BZEEX |
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Виробник: Diodes Incorporated
Description: INTERFACE ULS W-DFN2030-8
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Delay Time: 169ns
Number of Channels: 2
Mounting Type: Surface Mount
Output: 2-Wire Bus
Type: Buffer, ReDriver
Input: 2-Wire Bus
Voltage - Supply: 0.8V ~ 5.5V
Applications: I2C
Current - Supply: 500µA
Data Rate (Max): 400kHz
Supplier Device Package: 8-TDFN (2x3)
Description: INTERFACE ULS W-DFN2030-8
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Delay Time: 169ns
Number of Channels: 2
Mounting Type: Surface Mount
Output: 2-Wire Bus
Type: Buffer, ReDriver
Input: 2-Wire Bus
Voltage - Supply: 0.8V ~ 5.5V
Applications: I2C
Current - Supply: 500µA
Data Rate (Max): 400kHz
Supplier Device Package: 8-TDFN (2x3)
товару немає в наявності
В кошику
од. на суму грн.
| PI3DBV10ZEEX |
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Виробник: Diodes Incorporated
Description: IC VIDEO SWITCH 2X1 12TDFN
Packaging: Tape & Reel (TR)
Package / Case: 12-WFDFN Exposed Pad
Mounting Type: Surface Mount
Applications: Video
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 12-TDFN (3.5x3)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 1
Description: IC VIDEO SWITCH 2X1 12TDFN
Packaging: Tape & Reel (TR)
Package / Case: 12-WFDFN Exposed Pad
Mounting Type: Surface Mount
Applications: Video
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 12-TDFN (3.5x3)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| SDM1M40LP8Q-7 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 1A UDFN16082
Packaging: Tape & Reel (TR)
Package / Case: 2-UFDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.4 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: U-DFN1608-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 1A UDFN16082
Packaging: Tape & Reel (TR)
Package / Case: 2-UFDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.4 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: U-DFN1608-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 5.85 грн |
| 20000+ | 5.17 грн |
| SDM1M40LP8Q-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 1A UDFN16082
Packaging: Cut Tape (CT)
Package / Case: 2-UFDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.4 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: U-DFN1608-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 1A UDFN16082
Packaging: Cut Tape (CT)
Package / Case: 2-UFDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.4 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: U-DFN1608-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
на замовлення 29848 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.91 грн |
| 17+ | 19.25 грн |
| 100+ | 12.16 грн |
| 500+ | 8.54 грн |
| 1000+ | 7.61 грн |
| 2000+ | 6.82 грн |
| 5000+ | 5.87 грн |
| D50V0S1U2LP1608-7 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 50VWM 90VC UDFN16082
Packaging: Cut Tape (CT)
Package / Case: 2-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 126pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A
Voltage - Reverse Standoff (Typ): 50V
Supplier Device Package: U-DFN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56V
Voltage - Clamping (Max) @ Ipp: 90V
Power Line Protection: No
Description: TVS DIODE 50VWM 90VC UDFN16082
Packaging: Cut Tape (CT)
Package / Case: 2-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 126pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A
Voltage - Reverse Standoff (Typ): 50V
Supplier Device Package: U-DFN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56V
Voltage - Clamping (Max) @ Ipp: 90V
Power Line Protection: No
на замовлення 57300 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 26.87 грн |
| 19+ | 17.22 грн |
| 100+ | 6.96 грн |
| 500+ | 6.02 грн |
| 1000+ | 5.37 грн |
| 2000+ | 5.34 грн |
| 5000+ | 5.22 грн |
| SBR1M100BLP-7 |
![]() |
Виробник: Diodes Incorporated
Description: BRIDGE RECT 1P 100V 1A DFN3030
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerUDFN
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Super Barrier
Supplier Device Package: U-DFN3030-4
Grade: Automotive
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Qualification: AEC-Q101
Description: BRIDGE RECT 1P 100V 1A DFN3030
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerUDFN
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Super Barrier
Supplier Device Package: U-DFN3030-4
Grade: Automotive
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Qualification: AEC-Q101
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 19.75 грн |
| 6000+ | 17.94 грн |
| 9000+ | 16.83 грн |
| 15000+ | 15.47 грн |
| SBR1M100BLP-7 |
![]() |
Виробник: Diodes Incorporated
Description: BRIDGE RECT 1P 100V 1A DFN3030
Packaging: Cut Tape (CT)
Package / Case: 4-PowerUDFN
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Super Barrier
Supplier Device Package: U-DFN3030-4
Grade: Automotive
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Qualification: AEC-Q101
Description: BRIDGE RECT 1P 100V 1A DFN3030
Packaging: Cut Tape (CT)
Package / Case: 4-PowerUDFN
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Super Barrier
Supplier Device Package: U-DFN3030-4
Grade: Automotive
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Qualification: AEC-Q101
на замовлення 22506 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 58.78 грн |
| 10+ | 47.47 грн |
| 100+ | 32.13 грн |
| 500+ | 23.36 грн |
| 1000+ | 21.18 грн |
| 1.5KE82A-B |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 70.1VWM 113VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 70.1VWM 113VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| DSC06A065LP-13 |
Виробник: Diodes Incorporated
Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 295pF @ 100mV, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 295pF @ 100mV, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 111.59 грн |
| DSC06A065LP-13 |
Виробник: Diodes Incorporated
Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 295pF @ 100mV, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 295pF @ 100mV, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 318.28 грн |
| 10+ | 202.17 грн |
| 100+ | 142.96 грн |
| 500+ | 123.43 грн |
| P6KE250A-B |
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Виробник: Diodes Incorporated
Description: TVS DIODE 214VWM 344VC DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.75A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 214VWM 344VC DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.75A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| B250AE-13 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Description: DIODE SCHOTTKY 50V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| FL2500094 |
![]() |
Виробник: Diodes Incorporated
Description: CRYSTAL 25.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
Description: CRYSTAL 25.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 24.82 грн |
| FL2500094 |
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Виробник: Diodes Incorporated
Description: CRYSTAL 25.0000MHZ 8PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
Description: CRYSTAL 25.0000MHZ 8PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
на замовлення 5207 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 40.31 грн |
| 10+ | 33.80 грн |
| 25+ | 32.02 грн |
| 50+ | 28.78 грн |
| 100+ | 27.59 грн |
| 250+ | 26.09 грн |
| 500+ | 24.61 грн |
| 1000+ | 23.59 грн |
| FZT956QTA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 200V 2A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 400mA, 2A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-223-3
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.6 W
Qualification: AEC-Q101
Description: TRANS PNP 200V 2A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 400mA, 2A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-223-3
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.6 W
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 135.20 грн |
| 10+ | 82.97 грн |
| 100+ | 55.84 грн |
| 500+ | 41.50 грн |
| HBS410-13 |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 4A HBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 4A HBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 792500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 18.86 грн |
| 5000+ | 16.71 грн |
| 7500+ | 15.98 грн |
| 12500+ | 14.22 грн |
| 17500+ | 13.76 грн |
| 25000+ | 13.71 грн |
| HBS410-13 |
![]() |
Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 4A HBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 4A HBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 794974 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 74.74 грн |
| 10+ | 44.96 грн |
| 100+ | 29.37 грн |
| 500+ | 21.27 грн |
| 1000+ | 19.24 грн |
| HBS610-13 |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 6A HBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 6A HBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 21.09 грн |
| 5000+ | 18.73 грн |
| 7500+ | 17.92 грн |
| HBS610-13 |
![]() |
Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 6A HBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 6A HBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 9990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 82.30 грн |
| 10+ | 49.57 грн |
| 100+ | 32.54 грн |
| 500+ | 23.67 грн |
| 1000+ | 21.45 грн |
| DMT6017LFDF-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 65V 8.1A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V
Description: MOSFET N-CH 65V 8.1A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V
на замовлення 2656 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.94 грн |
| 10+ | 34.61 грн |
| 100+ | 22.34 грн |
| 500+ | 16.01 грн |
| 1000+ | 14.41 грн |
| DMT6013LSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 30 V
Description: MOSFET N-CH 60V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 30 V
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| DMT6013LSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 30 V
Description: MOSFET N-CH 60V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 30 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.46 грн |
| 10+ | 35.99 грн |
| 100+ | 23.28 грн |
| 500+ | 16.71 грн |
| 1000+ | 15.05 грн |
| DMT6017LDV-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 25.3 PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 25.3 (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Description: MOSFET 2N-CH 25.3 PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 25.3 (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 24.87 грн |
| DMT6017LDV-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 25.3 PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 25.3 (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Description: MOSFET 2N-CH 25.3 PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 25.3 (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 94.90 грн |
| 10+ | 57.58 грн |
| 100+ | 38.05 грн |
| 500+ | 27.84 грн |
| 1000+ | 25.30 грн |
| DMT6007LFG-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 15A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
Description: MOSFET N-CH 60V 15A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 30.17 грн |
| DMT6007LFG-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 15A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
Description: MOSFET N-CH 60V 15A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
на замовлення 5517 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 116.73 грн |
| 10+ | 71.08 грн |
| 100+ | 47.49 грн |
| 500+ | 35.06 грн |
| 1000+ | 31.99 грн |
| DMP4016SPSW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V
Power Dissipation (Max): 3.9W (Ta), 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V
Power Dissipation (Max): 3.9W (Ta), 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
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| DMP4016SPSWQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V
Power Dissipation (Max): 3.9W (Ta), 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V
Power Dissipation (Max): 3.9W (Ta), 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Qualification: AEC-Q101
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| DMT26M0LDG-7 |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 25V 11.6A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 33.8A (Tc), 20.1A (Ta), 52.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 13V, 4016pF @ 13V
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 2mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.9nC @ 10V, 57.4nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA
Supplier Device Package: PowerDI3333-8 (Type F)
Description: MOSFET 2N-CH 25V 11.6A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 33.8A (Tc), 20.1A (Ta), 52.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 13V, 4016pF @ 13V
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 2mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.9nC @ 10V, 57.4nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA
Supplier Device Package: PowerDI3333-8 (Type F)
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| DMT26M0LDG-13 |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 25V 11.6A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 33.8A (Tc), 20.1A (Ta), 52.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 13V, 4016pF @ 13V
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 2mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.9nC @ 10V, 57.4nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA
Supplier Device Package: PowerDI3333-8 (Type F)
Description: MOSFET 2N-CH 25V 11.6A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 33.8A (Tc), 20.1A (Ta), 52.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 13V, 4016pF @ 13V
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 2mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.9nC @ 10V, 57.4nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA
Supplier Device Package: PowerDI3333-8 (Type F)
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| DMP3056L-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 4.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V
Description: MOSFET P-CH 30V 4.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 7.30 грн |
| DMP3056L-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 4.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V
Description: MOSFET P-CH 30V 4.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 39.47 грн |
| 14+ | 23.29 грн |
| 100+ | 14.85 грн |
| 500+ | 10.49 грн |
| 1000+ | 9.03 грн |
| 2000+ | 8.42 грн |
| 5000+ | 7.30 грн |
| ZXTD2090E6TA |
Виробник: Diodes Incorporated
Description: TRANS 2NPN DUAL 50V 1A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-26
Description: TRANS 2NPN DUAL 50V 1A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-26
на замовлення 501000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 25.51 грн |
| 6000+ | 22.78 грн |
| 9000+ | 21.88 грн |
| 15000+ | 20.21 грн |
| ZXTD2090E6TA |
Виробник: Diodes Incorporated
Description: TRANS 2NPN DUAL 50V 1A SOT-26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-26
Description: TRANS 2NPN DUAL 50V 1A SOT-26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-26
на замовлення 501000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 98.25 грн |
| 10+ | 59.68 грн |
| 100+ | 39.54 грн |
| 500+ | 28.99 грн |
| 1000+ | 26.37 грн |
| AP22971GD8-7 |
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Виробник: Diodes Incorporated
Description: LOAD SWITCH LOW VOLTAGE X1-WLB19
Features: Load Discharge, Power Good, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, WLBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: High Side
Rds On (Typ): 6.7mOhm
Input Type: Non-Inverting
Voltage - Load: 0.65V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WLP (1.88x0.88)
Fault Protection: Over Temperature
Description: LOAD SWITCH LOW VOLTAGE X1-WLB19
Features: Load Discharge, Power Good, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, WLBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: High Side
Rds On (Typ): 6.7mOhm
Input Type: Non-Inverting
Voltage - Load: 0.65V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WLP (1.88x0.88)
Fault Protection: Over Temperature
на замовлення 384000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 15.77 грн |
| 6000+ | 14.78 грн |
| 9000+ | 14.58 грн |
| 15000+ | 13.47 грн |
| 21000+ | 13.34 грн |
| 30000+ | 13.22 грн |
| AP22971GD8-7 |
![]() |
Виробник: Diodes Incorporated
Description: LOAD SWITCH LOW VOLTAGE X1-WLB19
Features: Load Discharge, Power Good, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, WLBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: High Side
Rds On (Typ): 6.7mOhm
Input Type: Non-Inverting
Voltage - Load: 0.65V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WLP (1.88x0.88)
Fault Protection: Over Temperature
Description: LOAD SWITCH LOW VOLTAGE X1-WLB19
Features: Load Discharge, Power Good, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, WLBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: High Side
Rds On (Typ): 6.7mOhm
Input Type: Non-Inverting
Voltage - Load: 0.65V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WLP (1.88x0.88)
Fault Protection: Over Temperature
на замовлення 386985 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 36.11 грн |
| 14+ | 24.34 грн |
| 25+ | 21.74 грн |
| 100+ | 17.72 грн |
| 250+ | 16.44 грн |
| 500+ | 15.67 грн |
| 1000+ | 14.79 грн |
| PI6CB332004AZLFEX-13R |
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Виробник: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: HCSL
Type: Fanout Buffer (Distribution)
Input: Clock
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-QFN (4x4)
Frequency - Max: 400 MHz
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: HCSL
Type: Fanout Buffer (Distribution)
Input: Clock
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-QFN (4x4)
Frequency - Max: 400 MHz
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3500+ | 173.91 грн |
| PI6CB332004AZLFEX-13R |
![]() |
Виробник: Diodes Incorporated
Description: IC
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: HCSL
Type: Fanout Buffer (Distribution)
Input: Clock
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-QFN (4x4)
Frequency - Max: 400 MHz
Description: IC
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: HCSL
Type: Fanout Buffer (Distribution)
Input: Clock
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-QFN (4x4)
Frequency - Max: 400 MHz
на замовлення 6925 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 319.96 грн |
| 10+ | 233.63 грн |
| 25+ | 215.04 грн |
| 100+ | 182.62 грн |
| 250+ | 173.47 грн |
| 500+ | 167.96 грн |
| 1000+ | 160.75 грн |
| SPX2940U-L-5-0 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 5V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 5V
Voltage Dropout (Max): 0.28V @ 1A
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage
Description: IC REG LINEAR 5V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 5V
Voltage Dropout (Max): 0.28V @ 1A
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage
товару немає в наявності
В кошику
од. на суму грн.
| MMBTA64-7-F-W |
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Виробник: Diodes Incorporated
Description: GENERAL PURPOSE TRANSISTOR SOT23
Packaging: Tape & Reel (TR)
Description: GENERAL PURPOSE TRANSISTOR SOT23
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| MMBTA63-7-F-W |
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Виробник: Diodes Incorporated
Description: GENERAL PURPOSE TRANSISTOR SOT23
Packaging: Tape & Reel (TR)
Description: GENERAL PURPOSE TRANSISTOR SOT23
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| B230BE-13 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 30V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE SCHOTTKY 30V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| AP9101CAK-CLTRG1 |
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Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-25
Fault Protection: Over Current, Over Voltage
Description: IC BATT PROT LI-ION 1CELL SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-25
Fault Protection: Over Current, Over Voltage
товару немає в наявності
В кошику
од. на суму грн.
| AP9101CAK6-ALTRG1 |
Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
товару немає в наявності
В кошику
од. на суму грн.
| AP9101CAK6-ALTRG1 |
Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
товару немає в наявності
В кошику
од. на суму грн.
| MMBT4401-13-F-W |
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Виробник: Diodes Incorporated
Description: TRANS NPN 40V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
Description: TRANS NPN 40V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
товару немає в наявності
В кошику
од. на суму грн.
| MMBT4401-13-F-W |
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Виробник: Diodes Incorporated
Description: TRANS NPN 40V 0.6A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
Description: TRANS NPN 40V 0.6A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
товару немає в наявності
В кошику
од. на суму грн.
| FN6600058 |
![]() |
Виробник: Diodes Incorporated
Description: XTAL OSC XO 66.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 66 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 66.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 66 MHz
Base Resonator: Crystal
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 66.13 грн |
| 2000+ | 61.05 грн |
| 3000+ | 59.56 грн |
| 5000+ | 54.19 грн |
| 7000+ | 53.09 грн |
| 10000+ | 51.95 грн |
| 12000+ | 50.54 грн |
| FN6600058 |
![]() |
Виробник: Diodes Incorporated
Description: XTAL OSC XO 66.0000MHZ CMOS
Packaging: Cut Tape (CT)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 66 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 66.0000MHZ CMOS
Packaging: Cut Tape (CT)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 66 MHz
Base Resonator: Crystal
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 100.77 грн |
| 10+ | 84.26 грн |
| 25+ | 79.74 грн |
| 50+ | 71.72 грн |
| 100+ | 68.76 грн |
| 250+ | 65.03 грн |
| 500+ | 61.32 грн |
| FN6600061 |
![]() |
Виробник: Diodes Incorporated
Description: XTAL OSC XO 66.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 66 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 66.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 66 MHz
Base Resonator: Crystal
товару немає в наявності
В кошику
од. на суму грн.
| ZXT951KQTC |
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Виробник: Diodes Incorporated
Description: TRANS PNP 60V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 600mA, 6A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.1 W
Qualification: AEC-Q101
Description: TRANS PNP 60V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 600mA, 6A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.1 W
Qualification: AEC-Q101
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 52.08 грн |
| 5000+ | 48.46 грн |
| ZXT951KQTC |
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Виробник: Diodes Incorporated
Description: TRANS PNP 60V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 600mA, 6A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.1 W
Qualification: AEC-Q101
Description: TRANS PNP 60V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 600mA, 6A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.1 W
Qualification: AEC-Q101
на замовлення 14811 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 177.19 грн |
| 10+ | 109.66 грн |
| 100+ | 74.94 грн |
| 500+ | 56.39 грн |
| 1000+ | 55.67 грн |
| BAV16W-7-F-W |
Виробник: Diodes Incorporated
Description: FAST SWITCHING DIODE SOD123 T&R
Packaging: Tape & Reel (TR)
Description: FAST SWITCHING DIODE SOD123 T&R
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| MURS360BQ |
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Виробник: Diodes Incorporated
Description: IC
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Description: IC
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.10 грн |
| 10+ | 33.88 грн |
| 100+ | 21.88 грн |
| 500+ | 15.68 грн |
| 1000+ | 14.11 грн |
| MURS360Q |
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Виробник: Diodes Incorporated
Description: IC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC (Type C)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Qualification: AEC-Q101
Description: IC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC (Type C)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.46 грн |
| 10+ | 36.31 грн |
| 100+ | 23.54 грн |
| 500+ | 16.90 грн |
| 1000+ | 15.23 грн |
| AP68355QSP-13 |
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Виробник: Diodes Incorporated
Description: DCDC Cont HV Buck SO-8EP T&R 4K
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.5A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 80V
Topology: Buck
Supplier Device Package: 8-SO-EP
Synchronous Rectifier: Yes
Voltage - Output (Max): 50V
Voltage - Input (Min): 5.5V
Voltage - Output (Min/Fixed): 1.2V
Grade: Automotive
Qualification: AEC-Q100
Description: DCDC Cont HV Buck SO-8EP T&R 4K
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.5A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 80V
Topology: Buck
Supplier Device Package: 8-SO-EP
Synchronous Rectifier: Yes
Voltage - Output (Max): 50V
Voltage - Input (Min): 5.5V
Voltage - Output (Min/Fixed): 1.2V
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
























