Продукція > DIOTEC SEMICONDUCTOR > Всі товари виробника DIOTEC SEMICONDUCTOR (28871) > Сторінка 218 з 482
| Фото | Назва | Виробник | Інформація |
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MMBZ15CA | DIOTEC SEMICONDUCTOR |
 Category: Transil diodes - arraysDescription: Diode: TVS array; 14.25÷15.75V; 1.9A; 40W; double,common anode Type of diode: TVS array Peak pulse power dissipation: 40W Max. off-state voltage: 12V Breakdown voltage: 14.25...15.75V Max. forward impulse current: 1.9A Semiconductor structure: common anode; double Case: SOT23 Mounting: SMD Leakage current: 50nA Kind of package: reel; tape Features of semiconductor devices: ESD protection Capacitance: 70pF кількість в упаковці: 10 шт |
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| MMBZ18CA | DIOTEC SEMICONDUCTOR |
Category: Transil diodes - arrays Description: Diode: TVS array; 17.1÷18.9V; 1.6A; 40W; double,common anode Type of diode: TVS array Breakdown voltage: 17.1...18.9V Max. forward impulse current: 1.6A Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 14.5V Features of semiconductor devices: ESD protection Leakage current: 50nA Kind of package: reel; tape Capacitance: 70pF кількість в упаковці: 10 шт |
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MMBZ27CA-AQ | DIOTEC SEMICONDUCTOR |
Category: Transil diodes - arrays Description: Diode: TVS; 25.65÷28.35V; 1A; 40W; double,common anode; SOT23 Type of diode: TVS Mounting: SMD Kind of package: reel; tape Case: SOT23 Semiconductor structure: common anode; double Leakage current: 50nA Features of semiconductor devices: ESD protection Application: automotive industry Peak pulse power dissipation: 40W Capacitance: 50pF Max. off-state voltage: 22V Max. forward impulse current: 1A Breakdown voltage: 25.65...28.35V кількість в упаковці: 10 шт |
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MMBZ27CA | DIOTEC SEMICONDUCTOR |
Category: Transil diodes - arrays Description: Diode: TVS; 25.65÷28.35V; 1A; 40W; double,common anode; SOT23 Type of diode: TVS Mounting: SMD Kind of package: reel; tape Case: SOT23 Semiconductor structure: common anode; double Leakage current: 50nA Features of semiconductor devices: ESD protection Peak pulse power dissipation: 40W Capacitance: 50pF Max. off-state voltage: 22V Max. forward impulse current: 1A Breakdown voltage: 25.65...28.35V кількість в упаковці: 10 шт |
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| MMBZ5V6CA | DIOTEC SEMICONDUCTOR |
Category: Transil diodes - arrays Description: Diode: TVS array; 5.3÷5.9V; 3A; 24W; double,common anode; SOT23 Type of diode: TVS array Breakdown voltage: 5.3...5.9V Max. forward impulse current: 3A Peak pulse power dissipation: 24W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 3V Features of semiconductor devices: ESD protection Leakage current: 5µA Kind of package: reel; tape Capacitance: 280pF кількість в упаковці: 1 шт |
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MMBZ9V1CA | DIOTEC SEMICONDUCTOR |
Category: Transil diodes - arrays Description: Diode: TVS; 8.65÷9.56V; 1.7A; 24W; double,common anode; SOT23 Type of diode: TVS Mounting: SMD Max. off-state voltage: 6V Semiconductor structure: common anode; double Features of semiconductor devices: ESD protection Capacitance: 160pF Case: SOT23 Kind of package: reel; tape Leakage current: 0.3µA Max. forward impulse current: 1.7A Peak pulse power dissipation: 24W Breakdown voltage: 8.65...9.56V кількість в упаковці: 10 шт |
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MMDT2227 | DIOTEC SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 40/60V; 0.6A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 40/60V Collector current: 0.6A Power dissipation: 0.2W Case: SOT363 Mounting: SMD Kind of package: reel; tape кількість в упаковці: 20 шт |
на замовлення 1560 шт: термін постачання 7-14 дні (днів) |
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| MMDT5111W | DIOTEC SEMICONDUCTOR | MMDT5111W-DIO PNP SMD transistors |
на замовлення 2800 шт: термін постачання 7-14 дні (днів) |
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MMDT5112W | DIOTEC SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 22kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ кількість в упаковці: 20 шт |
на замовлення 2974 шт: термін постачання 7-14 дні (днів) |
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MMDT5114W | DIOTEC SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ Mounting: SMD Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 47kΩ Case: SOT323 Frequency: 250MHz кількість в упаковці: 20 шт |
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| MMDT5211W | DIOTEC SEMICONDUCTOR | MMDT5211W-DIO NPN SMD transistors |
на замовлення 3000 шт: термін постачання 7-14 дні (днів) |
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MMDT5212W | DIOTEC SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ кількість в упаковці: 20 шт |
на замовлення 3000 шт: термін постачання 7-14 дні (днів) |
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| MMDT5213W-AQ | DIOTEC SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 47kΩ Case: SOT323 Mounting: SMD Kind of package: reel; tape Application: automotive industry Frequency: 250MHz Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base resistor: 47kΩ Base-emitter resistor: 47kΩ кількість в упаковці: 20 шт |
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MMDT5213W | DIOTEC SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 47kΩ Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base resistor: 47kΩ Base-emitter resistor: 47kΩ кількість в упаковці: 20 шт |
на замовлення 2682 шт: термін постачання 7-14 дні (днів) |
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MMDT5214W | DIOTEC SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ кількість в упаковці: 20 шт |
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MMDT521LW-AQ | DIOTEC SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 200mW Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Application: automotive industry |
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| MMDTA141DW | DIOTEC SEMICONDUCTOR | MMDTA141DW-DIO PNP SMD transistors |
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MMDTC124EE-AQ | DIOTEC SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 30mA; 150mW; SOT523; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 30mA Power dissipation: 0.15W Case: SOT523 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Application: automotive industry Base-emitter resistor: 22kΩ кількість в упаковці: 25 шт |
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MMDTD141 | DIOTEC SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ кількість в упаковці: 20 шт |
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MMFT8472DW | DIOTEC SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 60/-50V; 0.115/-0.13A; 0.2W Mounting: SMD Case: SOT363 Kind of package: reel; tape Drain-source voltage: 60/-50V Drain current: 0.115/-0.13A On-state resistance: 10Ω Type of transistor: N/P-MOSFET Power dissipation: 0.2W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 5 шт |
на замовлення 2440 шт: термін постачання 7-14 дні (днів) |
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| MMFTC6420 | DIOTEC SEMICONDUCTOR | MMFTC6420-DIO Multi channel transistors |
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MMFTN123 | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23 Mounting: SMD Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 6Ω Type of transistor: N-MOSFET Power dissipation: 0.36W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Case: SOT23 кількість в упаковці: 10 шт |
на замовлення 3000 шт: термін постачання 7-14 дні (днів) |
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| MMFTN138-AQ | DIOTEC SEMICONDUCTOR | MMFTN138-AQ-DIO SMD N channel transistors |
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| MMFTN138 | DIOTEC SEMICONDUCTOR |
MMFTN138-DIO SMD N channel transistors |
на замовлення 3920 шт: термін постачання 7-14 дні (днів) |
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MMFTN138K | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 360mA; Idm: 1.2A; 350mW; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 1.3nC Gate-source voltage: ±20V Pulsed drain current: 1.2A Kind of channel: enhanced Drain-source voltage: 60V Drain current: 0.36A On-state resistance: 6.5Ω Type of transistor: N-MOSFET Power dissipation: 0.35W Polarisation: unipolar кількість в упаковці: 1 шт |
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MMFTN138W | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 220mA; Idm: 0.88A; 200mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.22A Pulsed drain current: 0.88A Power dissipation: 0.2W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Gate charge: 1.1nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| MMFTN170 | DIOTEC SEMICONDUCTOR |
MMFTN170-DIO SMD N channel transistors |
на замовлення 3100 шт: термін постачання 7-14 дні (днів) |
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| MMFTN20 | DIOTEC SEMICONDUCTOR |
MMFTN20-DIO SMD N channel transistors |
на замовлення 80 шт: термін постачання 7-14 дні (днів) |
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MMFTN210A | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 7.2A; 1.56W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2A Pulsed drain current: 7.2A Power dissipation: 1.56W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 20 шт |
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MMFTN2362-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Pulsed drain current: 12A Power dissipation: 1.25W Gate charge: 8.6nC Polarisation: unipolar Drain current: 3A Kind of channel: enhanced Drain-source voltage: 60V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 0.1Ω кількість в упаковці: 5 шт |
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MMFTN2362 | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Pulsed drain current: 12A Power dissipation: 1.25W Gate charge: 8.6nC Polarisation: unipolar Drain current: 3A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 0.1Ω кількість в упаковці: 5 шт |
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| MMFTN3018W | DIOTEC SEMICONDUCTOR |
MMFTN3018W-DIO SMD N channel transistors |
на замовлення 340 шт: термін постачання 7-14 дні (днів) |
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MMFTN3402 | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 15A; 1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Pulsed drain current: 15A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 120000 шт |
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MMFTN3404A-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.6A Pulsed drain current: 22A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 5 шт |
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MMFTN3404A | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.6A Pulsed drain current: 22A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
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| MMFTN3422ASK | DIOTEC SEMICONDUCTOR |
MMFTN3422ASK-DIO SMD N channel transistors |
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| MMFTN3422K | DIOTEC SEMICONDUCTOR |
MMFTN3422K-DIO SMD N channel transistors |
на замовлення 2070 шт: термін постачання 7-14 дні (днів) |
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MMFTN3479KW | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.5A; Idm: 14A; 0.9W; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 0.9W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 95mΩ Mounting: SMD Gate charge: 2.8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
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| MMFTN4520 | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 1A; Idm: 4A; 0.96W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 1A Pulsed drain current: 4A Power dissipation: 0.96W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 3.8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| MMFTN490K-AQ | DIOTEC SEMICONDUCTOR | MMFTN490K-AQ-DIO SMD N channel transistors |
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MMFTN6001 | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 440mA; Idm: 1A; 530mW; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Polarisation: unipolar Drain current: 440mA Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET On-state resistance: 2Ω Gate-source voltage: ±20V Pulsed drain current: 1A Power dissipation: 530mW кількість в упаковці: 20 шт |
на замовлення 24520 шт: термін постачання 7-14 дні (днів) |
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MMFTN6190KDW | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1A; Idm: 9.6A; 0.4W; SOT363 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 1A Pulsed drain current: 9.6A Power dissipation: 0.4W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: SMD Gate charge: 2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
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MMFTN620KD-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 350mA; Idm: 1A; 0.5W Mounting: SMD Case: SOT26; SOT457 Application: automotive industry Kind of package: reel; tape Power dissipation: 0.5W Polarisation: unipolar Gate charge: 1.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1A Drain-source voltage: 60V Drain current: 0.35A On-state resistance: 2.25Ω Type of transistor: N-MOSFET кількість в упаковці: 10 шт |
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MMFTN620KD | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 350mA; Idm: 1A; 0.5W Mounting: SMD Case: SOT26; SOT457 Kind of package: reel; tape Power dissipation: 0.5W Polarisation: unipolar Gate charge: 1.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1A Drain-source voltage: 60V Drain current: 0.35A On-state resistance: 2.25Ω Type of transistor: N-MOSFET кількість в упаковці: 20 шт |
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MMFTN620KDW-AQ | DIOTEC SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 350mA; 0.2W; SOT363 Mounting: SMD Case: SOT363 Application: automotive industry Kind of package: reel; tape Power dissipation: 0.2W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 0.35A On-state resistance: 2Ω Type of transistor: N-MOSFET x2 кількість в упаковці: 5 шт |
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MMFTN620KDW | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.35A; Idm: 0.5A; 0.2W; SOT363 Mounting: SMD Case: SOT363 Kind of package: reel; tape Power dissipation: 0.2W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.5A Drain-source voltage: 60V Drain current: 0.35A On-state resistance: 2Ω Type of transistor: N-MOSFET кількість в упаковці: 20 шт |
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MMFTP2319 | DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -4.2A; Idm: -30A; 0.75W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -4.2A Pulsed drain current: -30A Power dissipation: 0.75W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
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| MMFTP3008AK | DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -230mA; Idm: -1A; 420mW; SOT23 Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 0.55nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -1A Case: SOT23 Drain-source voltage: -30V Drain current: -0.23A On-state resistance: 6.5Ω Type of transistor: P-MOSFET Power dissipation: 0.42W кількість в упаковці: 1 шт |
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| MMFTP3008K-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -360mA; Idm: -1.4A; 500mW Mounting: SMD Application: automotive industry Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.22nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -1.4A Case: SOT23 Drain-source voltage: -30V Drain current: -360mA On-state resistance: 5Ω Type of transistor: P-MOSFET Power dissipation: 0.5W кількість в упаковці: 1 шт |
товар відсутній |
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| MMFTP3008K | DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -360mA; Idm: -1.4A; 500mW Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.22nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -1.4A Case: SOT23 Drain-source voltage: -30V Drain current: -360mA On-state resistance: 5Ω Type of transistor: P-MOSFET Power dissipation: 0.5W кількість в упаковці: 1 шт |
товар відсутній |
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| MMFTP3160-AQ | DIOTEC SEMICONDUCTOR | MMFTP3160-AQ-DIO SMD P channel transistors |
товар відсутній |
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| MMFTP3160 | DIOTEC SEMICONDUCTOR | MMFTP3160-DIO SMD P channel transistors |
товар відсутній |
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MMFTP330K | DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -9.1A; 480mW; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Pulsed drain current: -9.1A Power dissipation: 0.48W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 75mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
товар відсутній |
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MMFTP332 | DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1A; Idm: -10A; 500mW; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.5W Polarisation: unipolar Gate charge: 4nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -10A Drain-source voltage: -20V Drain current: -1A On-state resistance: 410mΩ Type of transistor: P-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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| MMFTP3334K-AQ | DIOTEC SEMICONDUCTOR |
MMFTP3334K-AQ-DIO SMD P channel transistors |
товар відсутній |
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| MMFTP3334K | DIOTEC SEMICONDUCTOR | MMFTP3334K-DIO SMD P channel transistors |
товар відсутній |
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MMFTP3401-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4A; Idm: -27A; 1.4W; SOT23 Application: automotive industry Mounting: SMD Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -27A Case: SOT23 Drain-source voltage: -30V Drain current: -4A On-state resistance: 50mΩ Type of transistor: P-MOSFET кількість в упаковці: 5 шт |
товар відсутній |
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MMFTP3401 | DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1W; SOT23 Mounting: SMD Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±12V Case: SOT23 Drain-source voltage: -30V Drain current: -4A On-state resistance: 65mΩ Type of transistor: P-MOSFET кількість в упаковці: 10 шт |
на замовлення 27910 шт: термін постачання 7-14 дні (днів) |
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| MMFTP5618-AQ | DIOTEC SEMICONDUCTOR |
MMFTP5618-AQ-DIO SMD P channel transistors |
товар відсутній |
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| MMFTP5618 | DIOTEC SEMICONDUCTOR |
MMFTP5618-DIO SMD P channel transistors |
товар відсутній |
| MMBZ15CA |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: Transil diodes - arrays
Description: Diode: TVS array; 14.25÷15.75V; 1.9A; 40W; double,common anode
Type of diode: TVS array
Peak pulse power dissipation: 40W
Max. off-state voltage: 12V
Breakdown voltage: 14.25...15.75V
Max. forward impulse current: 1.9A
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 70pF
кількість в упаковці: 10 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 14.25÷15.75V; 1.9A; 40W; double,common anode
Type of diode: TVS array
Peak pulse power dissipation: 40W
Max. off-state voltage: 12V
Breakdown voltage: 14.25...15.75V
Max. forward impulse current: 1.9A
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 70pF
кількість в упаковці: 10 шт
товар відсутній
| MMBZ18CA |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: Transil diodes - arrays
Description: Diode: TVS array; 17.1÷18.9V; 1.6A; 40W; double,common anode
Type of diode: TVS array
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 1.6A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 14.5V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Kind of package: reel; tape
Capacitance: 70pF
кількість в упаковці: 10 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 17.1÷18.9V; 1.6A; 40W; double,common anode
Type of diode: TVS array
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 1.6A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 14.5V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Kind of package: reel; tape
Capacitance: 70pF
кількість в упаковці: 10 шт
товар відсутній
| MMBZ27CA-AQ |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: Transil diodes - arrays
Description: Diode: TVS; 25.65÷28.35V; 1A; 40W; double,common anode; SOT23
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Leakage current: 50nA
Features of semiconductor devices: ESD protection
Application: automotive industry
Peak pulse power dissipation: 40W
Capacitance: 50pF
Max. off-state voltage: 22V
Max. forward impulse current: 1A
Breakdown voltage: 25.65...28.35V
кількість в упаковці: 10 шт
Category: Transil diodes - arrays
Description: Diode: TVS; 25.65÷28.35V; 1A; 40W; double,common anode; SOT23
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Leakage current: 50nA
Features of semiconductor devices: ESD protection
Application: automotive industry
Peak pulse power dissipation: 40W
Capacitance: 50pF
Max. off-state voltage: 22V
Max. forward impulse current: 1A
Breakdown voltage: 25.65...28.35V
кількість в упаковці: 10 шт
товар відсутній
| MMBZ27CA |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: Transil diodes - arrays
Description: Diode: TVS; 25.65÷28.35V; 1A; 40W; double,common anode; SOT23
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Leakage current: 50nA
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 40W
Capacitance: 50pF
Max. off-state voltage: 22V
Max. forward impulse current: 1A
Breakdown voltage: 25.65...28.35V
кількість в упаковці: 10 шт
Category: Transil diodes - arrays
Description: Diode: TVS; 25.65÷28.35V; 1A; 40W; double,common anode; SOT23
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Leakage current: 50nA
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 40W
Capacitance: 50pF
Max. off-state voltage: 22V
Max. forward impulse current: 1A
Breakdown voltage: 25.65...28.35V
кількість в упаковці: 10 шт
товар відсутній
| MMBZ5V6CA |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.3÷5.9V; 3A; 24W; double,common anode; SOT23
Type of diode: TVS array
Breakdown voltage: 5.3...5.9V
Max. forward impulse current: 3A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Features of semiconductor devices: ESD protection
Leakage current: 5µA
Kind of package: reel; tape
Capacitance: 280pF
кількість в упаковці: 1 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.3÷5.9V; 3A; 24W; double,common anode; SOT23
Type of diode: TVS array
Breakdown voltage: 5.3...5.9V
Max. forward impulse current: 3A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Features of semiconductor devices: ESD protection
Leakage current: 5µA
Kind of package: reel; tape
Capacitance: 280pF
кількість в упаковці: 1 шт
товар відсутній
| MMBZ9V1CA |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: Transil diodes - arrays
Description: Diode: TVS; 8.65÷9.56V; 1.7A; 24W; double,common anode; SOT23
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 6V
Semiconductor structure: common anode; double
Features of semiconductor devices: ESD protection
Capacitance: 160pF
Case: SOT23
Kind of package: reel; tape
Leakage current: 0.3µA
Max. forward impulse current: 1.7A
Peak pulse power dissipation: 24W
Breakdown voltage: 8.65...9.56V
кількість в упаковці: 10 шт
Category: Transil diodes - arrays
Description: Diode: TVS; 8.65÷9.56V; 1.7A; 24W; double,common anode; SOT23
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 6V
Semiconductor structure: common anode; double
Features of semiconductor devices: ESD protection
Capacitance: 160pF
Case: SOT23
Kind of package: reel; tape
Leakage current: 0.3µA
Max. forward impulse current: 1.7A
Peak pulse power dissipation: 24W
Breakdown voltage: 8.65...9.56V
кількість в упаковці: 10 шт
товар відсутній
| MMDT2227 |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40/60V; 0.6A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40/60V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 20 шт
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40/60V; 0.6A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40/60V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 20 шт
на замовлення 1560 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 2.99 грн |
| 120+ | 2.45 грн |
| 500+ | 2.09 грн |
| 520+ | 1.91 грн |
| 1440+ | 1.81 грн |
| 12000+ | 1.74 грн |
| MMDT5111W |
Виробник: DIOTEC SEMICONDUCTOR
MMDT5111W-DIO PNP SMD transistors
MMDT5111W-DIO PNP SMD transistors
на замовлення 2800 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 3.43 грн |
| 940+ | 1.06 грн |
| 2540+ | 1 грн |
| MMDT5112W |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
кількість в упаковці: 20 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
кількість в упаковці: 20 шт
на замовлення 2974 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 3.43 грн |
| 160+ | 1.7 грн |
| 500+ | 1.46 грн |
| 900+ | 1.06 грн |
| 2460+ | 1.01 грн |
| MMDT5114W |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Case: SOT323
Frequency: 250MHz
кількість в упаковці: 20 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Case: SOT323
Frequency: 250MHz
кількість в упаковці: 20 шт
товар відсутній
| MMDT5211W |
Виробник: DIOTEC SEMICONDUCTOR
MMDT5211W-DIO NPN SMD transistors
MMDT5211W-DIO NPN SMD transistors
на замовлення 3000 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 3.43 грн |
| 940+ | 1.06 грн |
| 2540+ | 1 грн |
| MMDT5212W |
Виробник: DIOTEC SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
кількість в упаковці: 20 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
кількість в упаковці: 20 шт
на замовлення 3000 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 3.43 грн |
| 160+ | 1.7 грн |
| 500+ | 1.46 грн |
| 900+ | 1.06 грн |
| 2460+ | 1.01 грн |
| MMDT5213W-AQ |
Виробник: DIOTEC SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 47kΩ
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 20 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 47kΩ
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 20 шт
товар відсутній
| MMDT5213W |
Виробник: DIOTEC SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 47kΩ
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 20 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 47kΩ
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 20 шт
на замовлення 2682 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 3.26 грн |
| 180+ | 1.61 грн |
| 500+ | 1.39 грн |
| 920+ | 1.06 грн |
| 2520+ | 1 грн |
| MMDT5214W |
Виробник: DIOTEC SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 20 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
кількість в упаковці: 20 шт
товар відсутній
| MMDT521LW-AQ |
Виробник: DIOTEC SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 200mW
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 200mW
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Application: automotive industry
товар відсутній
| MMDTC124EE-AQ |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 30mA; 150mW; SOT523; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 30mA
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
кількість в упаковці: 25 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 30mA; 150mW; SOT523; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 30mA
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
кількість в упаковці: 25 шт
товар відсутній
| MMDTD141 |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
кількість в упаковці: 20 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
кількість в упаковці: 20 шт
товар відсутній
| MMFT8472DW |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 60/-50V; 0.115/-0.13A; 0.2W
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Drain-source voltage: 60/-50V
Drain current: 0.115/-0.13A
On-state resistance: 10Ω
Type of transistor: N/P-MOSFET
Power dissipation: 0.2W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 5 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 60/-50V; 0.115/-0.13A; 0.2W
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Drain-source voltage: 60/-50V
Drain current: 0.115/-0.13A
On-state resistance: 10Ω
Type of transistor: N/P-MOSFET
Power dissipation: 0.2W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 5 шт
на замовлення 2440 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 13.32 грн |
| 50+ | 5.78 грн |
| 100+ | 5.01 грн |
| 265+ | 3.67 грн |
| 730+ | 3.47 грн |
| MMFTN123 |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Mounting: SMD
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT23
кількість в упаковці: 10 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Mounting: SMD
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT23
кількість в упаковці: 10 шт
на замовлення 3000 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 6.66 грн |
| 80+ | 3.47 грн |
| 410+ | 2.43 грн |
| 1110+ | 2.3 грн |
| MMFTN138 |
|
Виробник: DIOTEC SEMICONDUCTOR
MMFTN138-DIO SMD N channel transistors
MMFTN138-DIO SMD N channel transistors
на замовлення 3920 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 43+ | 6.34 грн |
| 430+ | 2.31 грн |
| 1170+ | 2.19 грн |
| MMFTN138K |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 360mA; Idm: 1.2A; 350mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 1.3nC
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhanced
Drain-source voltage: 60V
Drain current: 0.36A
On-state resistance: 6.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 360mA; Idm: 1.2A; 350mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 1.3nC
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhanced
Drain-source voltage: 60V
Drain current: 0.36A
On-state resistance: 6.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
| MMFTN138W |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220mA; Idm: 0.88A; 200mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Pulsed drain current: 0.88A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220mA; Idm: 0.88A; 200mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Pulsed drain current: 0.88A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| MMFTN170 |
|
Виробник: DIOTEC SEMICONDUCTOR
MMFTN170-DIO SMD N channel transistors
MMFTN170-DIO SMD N channel transistors
на замовлення 3100 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 41+ | 6.66 грн |
| 380+ | 2.61 грн |
| 1040+ | 2.47 грн |
| MMFTN20 |
|
Виробник: DIOTEC SEMICONDUCTOR
MMFTN20-DIO SMD N channel transistors
MMFTN20-DIO SMD N channel transistors
на замовлення 80 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 41+ | 6.66 грн |
| 410+ | 2.43 грн |
| 1110+ | 2.3 грн |
| MMFTN210A |
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 7.2A; 1.56W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Pulsed drain current: 7.2A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 20 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 7.2A; 1.56W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Pulsed drain current: 7.2A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 20 шт
товар відсутній
| MMFTN2362-AQ |
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Pulsed drain current: 12A
Power dissipation: 1.25W
Gate charge: 8.6nC
Polarisation: unipolar
Drain current: 3A
Kind of channel: enhanced
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Pulsed drain current: 12A
Power dissipation: 1.25W
Gate charge: 8.6nC
Polarisation: unipolar
Drain current: 3A
Kind of channel: enhanced
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
кількість в упаковці: 5 шт
товар відсутній
| MMFTN2362 |
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Pulsed drain current: 12A
Power dissipation: 1.25W
Gate charge: 8.6nC
Polarisation: unipolar
Drain current: 3A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Pulsed drain current: 12A
Power dissipation: 1.25W
Gate charge: 8.6nC
Polarisation: unipolar
Drain current: 3A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
кількість в упаковці: 5 шт
товар відсутній
| MMFTN3018W |
|
Виробник: DIOTEC SEMICONDUCTOR
MMFTN3018W-DIO SMD N channel transistors
MMFTN3018W-DIO SMD N channel transistors
на замовлення 340 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 41+ | 6.66 грн |
| 410+ | 2.43 грн |
| 1110+ | 2.3 грн |
| MMFTN3402 |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 15A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 15A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 120000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 15A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 15A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 120000 шт
товар відсутній
| MMFTN3404A-AQ |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 5 шт
товар відсутній
| MMFTN3404A |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
| MMFTN3422ASK |
|
Виробник: DIOTEC SEMICONDUCTOR
MMFTN3422ASK-DIO SMD N channel transistors
MMFTN3422ASK-DIO SMD N channel transistors
товар відсутній
| MMFTN3422K |
|
Виробник: DIOTEC SEMICONDUCTOR
MMFTN3422K-DIO SMD N channel transistors
MMFTN3422K-DIO SMD N channel transistors
на замовлення 2070 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 13.23 грн |
| 195+ | 5.02 грн |
| 540+ | 4.75 грн |
| MMFTN3479KW |
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.5A; Idm: 14A; 0.9W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 0.9W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 2.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.5A; Idm: 14A; 0.9W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 0.9W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 2.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
| MMFTN4520 |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1A; Idm: 4A; 0.96W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 0.96W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 3.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1A; Idm: 4A; 0.96W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 0.96W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 3.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| MMFTN490K-AQ |
Виробник: DIOTEC SEMICONDUCTOR
MMFTN490K-AQ-DIO SMD N channel transistors
MMFTN490K-AQ-DIO SMD N channel transistors
товар відсутній
| MMFTN6001 |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 440mA; Idm: 1A; 530mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 440mA
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
On-state resistance: 2Ω
Gate-source voltage: ±20V
Pulsed drain current: 1A
Power dissipation: 530mW
кількість в упаковці: 20 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 440mA; Idm: 1A; 530mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 440mA
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
On-state resistance: 2Ω
Gate-source voltage: ±20V
Pulsed drain current: 1A
Power dissipation: 530mW
кількість в упаковці: 20 шт
на замовлення 24520 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 3.17 грн |
| 160+ | 1.65 грн |
| 500+ | 1.41 грн |
| 800+ | 1.16 грн |
| 2180+ | 1.09 грн |
| MMFTN6190KDW |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1A; Idm: 9.6A; 0.4W; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1A
Pulsed drain current: 9.6A
Power dissipation: 0.4W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1A; Idm: 9.6A; 0.4W; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1A
Pulsed drain current: 9.6A
Power dissipation: 0.4W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
| MMFTN620KD-AQ |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 350mA; Idm: 1A; 0.5W
Mounting: SMD
Case: SOT26; SOT457
Application: automotive industry
Kind of package: reel; tape
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 1.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1A
Drain-source voltage: 60V
Drain current: 0.35A
On-state resistance: 2.25Ω
Type of transistor: N-MOSFET
кількість в упаковці: 10 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 350mA; Idm: 1A; 0.5W
Mounting: SMD
Case: SOT26; SOT457
Application: automotive industry
Kind of package: reel; tape
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 1.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1A
Drain-source voltage: 60V
Drain current: 0.35A
On-state resistance: 2.25Ω
Type of transistor: N-MOSFET
кількість в упаковці: 10 шт
товар відсутній
| MMFTN620KD |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 350mA; Idm: 1A; 0.5W
Mounting: SMD
Case: SOT26; SOT457
Kind of package: reel; tape
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 1.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1A
Drain-source voltage: 60V
Drain current: 0.35A
On-state resistance: 2.25Ω
Type of transistor: N-MOSFET
кількість в упаковці: 20 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 350mA; Idm: 1A; 0.5W
Mounting: SMD
Case: SOT26; SOT457
Kind of package: reel; tape
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 1.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1A
Drain-source voltage: 60V
Drain current: 0.35A
On-state resistance: 2.25Ω
Type of transistor: N-MOSFET
кількість в упаковці: 20 шт
товар відсутній
| MMFTN620KDW-AQ |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 350mA; 0.2W; SOT363
Mounting: SMD
Case: SOT363
Application: automotive industry
Kind of package: reel; tape
Power dissipation: 0.2W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 0.35A
On-state resistance: 2Ω
Type of transistor: N-MOSFET x2
кількість в упаковці: 5 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 350mA; 0.2W; SOT363
Mounting: SMD
Case: SOT363
Application: automotive industry
Kind of package: reel; tape
Power dissipation: 0.2W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 0.35A
On-state resistance: 2Ω
Type of transistor: N-MOSFET x2
кількість в упаковці: 5 шт
товар відсутній
| MMFTN620KDW |
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.35A; Idm: 0.5A; 0.2W; SOT363
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Power dissipation: 0.2W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 0.5A
Drain-source voltage: 60V
Drain current: 0.35A
On-state resistance: 2Ω
Type of transistor: N-MOSFET
кількість в упаковці: 20 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.35A; Idm: 0.5A; 0.2W; SOT363
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Power dissipation: 0.2W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 0.5A
Drain-source voltage: 60V
Drain current: 0.35A
On-state resistance: 2Ω
Type of transistor: N-MOSFET
кількість в упаковці: 20 шт
товар відсутній
| MMFTP2319 |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.2A; Idm: -30A; 0.75W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.2A
Pulsed drain current: -30A
Power dissipation: 0.75W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.2A; Idm: -30A; 0.75W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.2A
Pulsed drain current: -30A
Power dissipation: 0.75W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
| MMFTP3008AK |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -230mA; Idm: -1A; 420mW; SOT23
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 0.55nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -1A
Case: SOT23
Drain-source voltage: -30V
Drain current: -0.23A
On-state resistance: 6.5Ω
Type of transistor: P-MOSFET
Power dissipation: 0.42W
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -230mA; Idm: -1A; 420mW; SOT23
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 0.55nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -1A
Case: SOT23
Drain-source voltage: -30V
Drain current: -0.23A
On-state resistance: 6.5Ω
Type of transistor: P-MOSFET
Power dissipation: 0.42W
кількість в упаковці: 1 шт
товар відсутній
| MMFTP3008K-AQ |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -360mA; Idm: -1.4A; 500mW
Mounting: SMD
Application: automotive industry
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.22nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -1.4A
Case: SOT23
Drain-source voltage: -30V
Drain current: -360mA
On-state resistance: 5Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -360mA; Idm: -1.4A; 500mW
Mounting: SMD
Application: automotive industry
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.22nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -1.4A
Case: SOT23
Drain-source voltage: -30V
Drain current: -360mA
On-state resistance: 5Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
кількість в упаковці: 1 шт
товар відсутній
| MMFTP3008K |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -360mA; Idm: -1.4A; 500mW
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.22nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -1.4A
Case: SOT23
Drain-source voltage: -30V
Drain current: -360mA
On-state resistance: 5Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -360mA; Idm: -1.4A; 500mW
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.22nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -1.4A
Case: SOT23
Drain-source voltage: -30V
Drain current: -360mA
On-state resistance: 5Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
кількість в упаковці: 1 шт
товар відсутній
| MMFTP3160-AQ |
Виробник: DIOTEC SEMICONDUCTOR
MMFTP3160-AQ-DIO SMD P channel transistors
MMFTP3160-AQ-DIO SMD P channel transistors
товар відсутній
| MMFTP330K |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -9.1A; 480mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -9.1A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -9.1A; 480mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -9.1A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| MMFTP332 |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; Idm: -10A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -10A
Drain-source voltage: -20V
Drain current: -1A
On-state resistance: 410mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; Idm: -10A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -10A
Drain-source voltage: -20V
Drain current: -1A
On-state resistance: 410mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| MMFTP3334K-AQ |
|
Виробник: DIOTEC SEMICONDUCTOR
MMFTP3334K-AQ-DIO SMD P channel transistors
MMFTP3334K-AQ-DIO SMD P channel transistors
товар відсутній
| MMFTP3401-AQ |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; Idm: -27A; 1.4W; SOT23
Application: automotive industry
Mounting: SMD
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -27A
Case: SOT23
Drain-source voltage: -30V
Drain current: -4A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; Idm: -27A; 1.4W; SOT23
Application: automotive industry
Mounting: SMD
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -27A
Case: SOT23
Drain-source voltage: -30V
Drain current: -4A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 5 шт
товар відсутній
| MMFTP3401 |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1W; SOT23
Mounting: SMD
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: SOT23
Drain-source voltage: -30V
Drain current: -4A
On-state resistance: 65mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 10 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1W; SOT23
Mounting: SMD
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: SOT23
Drain-source voltage: -30V
Drain current: -4A
On-state resistance: 65mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 10 шт
на замовлення 27910 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 6.16 грн |
| 80+ | 3.55 грн |
| 250+ | 3.01 грн |
| 380+ | 2.62 грн |
| 1040+ | 2.47 грн |
| MMFTP5618-AQ |
|
Виробник: DIOTEC SEMICONDUCTOR
MMFTP5618-AQ-DIO SMD P channel transistors
MMFTP5618-AQ-DIO SMD P channel transistors
товар відсутній