Продукція > DIOTEC SEMICONDUCTOR > Всі товари виробника DIOTEC SEMICONDUCTOR (24836) > Сторінка 413 з 414
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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LDI1117-05H | DIOTEC SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: LDI1117xxH Kind of package: reel; tape Operating temperature: -40...125°C Number of channels: 1 Input voltage: 6.5...12V Tolerance: ±1% Voltage drop: 1.15V |
на замовлення 9665 шт: термін постачання 14-30 дні (днів) |
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| DIJ2A7N90 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 2.7A; Idm: 6.5A; 65.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 2.7A Pulsed drain current: 6.5A Power dissipation: 65.7W Case: ITO220AB On-state resistance: 3.4Ω Mounting: THT Gate charge: 16.1nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MMFTP2319 | DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -4.2A; Idm: -30A; 0.75W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -4.2A Pulsed drain current: -30A Power dissipation: 0.75W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMFTP2333 | DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -20A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.1A Pulsed drain current: -20A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 45mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMFTP2301-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -10A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.8A Pulsed drain current: -10A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 4.4nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMFTP2301 | DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -10A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.8A Pulsed drain current: -10A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 4.4nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMFTP2307A | DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -24A; 1.6W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Pulsed drain current: -24A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 60mΩ Mounting: SMD Gate charge: 28.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMFTP2319-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -4.2A; Idm: -30A; 0.75W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -4.2A Pulsed drain current: -30A Power dissipation: 0.75W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMFTP2319A-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -4.2A; Idm: -30A; 750mW; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -4.2A Pulsed drain current: -30A Power dissipation: 0.75W Case: SOT23 On-state resistance: 97mΩ Mounting: SMD Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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P6SMBJ26CA-AQ | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 28.9÷32.1V; 14.3A; bidirectional; ±5%; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...32.1V Max. forward impulse current: 14.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Manufacturer series: P6SMBJ Tolerance: ±5% Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||||
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1.0SMBJ26CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1kW; 31.1÷34.4V; 23.8A; bidirectional; ±5%; SMB; 1.0SMBJ Type of diode: TVS Peak pulse power dissipation: 1kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 23.8A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: 1.0SMBJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1.0SMBJ26CA-AQ | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1kW; 31.1÷34.4V; 23.8A; bidirectional; ±5%; SMB; 1.0SMBJ Type of diode: TVS Peak pulse power dissipation: 1kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 23.8A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: 1.0SMBJ Tolerance: ±5% Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1.5SMCJ10CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 11.1÷12.3V; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 5µA Manufacturer series: 1.5SMCJ Tolerance: ±5% Kind of package: reel; tape |
на замовлення 2849 шт: термін постачання 14-30 дні (днів) |
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1.5SMCJ10CA-AQ | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 11.1÷12.3V; 88.2A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 88.2A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 5µA Manufacturer series: 1.5SMCJ Tolerance: ±5% Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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3.0SMCJ10CA-AQ | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 3kW; 11.1÷12.3V; 176.3A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 176.3A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 10µA Manufacturer series: 3.0SMCJ Tolerance: ±5% Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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3.0SMCJ10CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 3kW; 11.1÷12.3V; 176.3A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 176.3A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 10µA Manufacturer series: 3.0SMCJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZX84C2V4-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 2.4V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 2.4V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84C Application: automotive industry |
на замовлення 2650 шт: термін постачання 14-30 дні (днів) |
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| DI045N10PT-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 200A; 54W; PQFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 45A Power dissipation: 54W Case: PQFN3X3 On-state resistance: 10mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 200A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DI045N10PQ-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 400A; 40W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 39A Power dissipation: 40W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 400A Gate charge: 56nC Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| DI045N10PQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 400A; 40W; PQFN5X6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 45A Power dissipation: 40W Case: PQFN5X6 On-state resistance: 6.5mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 400A Gate charge: 56nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1.5KE39CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 39V; 29A; bidirectional; ±5%; Ø5.4x7.5mm; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 33.3V Breakdown voltage: 39V Max. forward impulse current: 29A Semiconductor structure: bidirectional Mounting: THT Leakage current: 5µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Kind of package: Ammo Pack Tolerance: ±5% Body dimensions: Ø5.4x7.5mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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P4KE250A | DIOTEC SEMICONDUCTOR |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 400W; 250V; 1.2A; unidirectional; ±5%; DO15; P4KE Manufacturer series: P4KE Peak pulse power dissipation: 0.4kW Max. off-state voltage: 214V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 5µA Case: DO15 Type of diode: TVS Tolerance: ±5% Mounting: THT Breakdown voltage: 250V Max. forward impulse current: 1.2A |
на замовлення 3961 шт: термін постачання 14-30 дні (днів) |
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P4SMA250A | DIOTEC SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 250V; 1.2A; unidirectional; ±5%; SMA; reel,tape Manufacturer series: P4SMA Peak pulse power dissipation: 0.4kW Max. off-state voltage: 214V Kind of package: reel; tape Semiconductor structure: unidirectional Leakage current: 5µA Case: SMA Type of diode: TVS Tolerance: ±5% Mounting: SMD Breakdown voltage: 250V Max. forward impulse current: 1.2A |
на замовлення 7213 шт: термін постачання 14-30 дні (днів) |
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B125C1500A | DIOTEC SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 250V; If: 1.5A; Ifsm: 50A Max. forward impulse current: 50A Version: flat Features of semiconductor devices: UL approval Leads: flat pin Max. off-state voltage: 250V Electrical mounting: THT Dimensions: 19x3.5x10mm Load current: 1.5A Kind of package: in-tray Type of bridge rectifier: single-phase |
на замовлення 81 шт: термін постачання 14-30 дні (днів) |
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ESDB15C | DIOTEC SEMICONDUCTOR |
Category: Protection diodes - arraysDescription: Diode: TVS array; 17.1÷20.3V; 5A; 200W; bidirectional,double; ESD Type of diode: TVS array Breakdown voltage: 17.1...20.3V Peak pulse power dissipation: 0.2kW Version: ESD Mounting: SMD Case: SOT23 Max. off-state voltage: 15V Leakage current: 50nA Number of channels: 2 Capacitance: 16pF Kind of package: reel; tape Max. forward impulse current: 5A Application: CAN Semiconductor structure: bidirectional; double |
на замовлення 2620 шт: термін постачання 14-30 дні (днів) |
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1N4934 | DIOTEC SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; DO41; Ammo Pack; 200ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: DO41 Kind of package: Ammo Pack Max. forward voltage: 1.2V Reverse recovery time: 200ns Features of semiconductor devices: fast switching Max. load current: 10A |
на замовлення 4883 шт: термін постачання 14-30 дні (днів) |
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5KP90CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 100÷115.5V; bidirectional; P600; 5kW; 5KP; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 90V Breakdown voltage: 100...115.5V Semiconductor structure: bidirectional Case: P600 Mounting: THT Leakage current: 10µA Kind of package: Ammo Pack Manufacturer series: 5KP |
на замовлення 964 шт: термін постачання 14-30 дні (днів) |
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MR820 | DIOTEC SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 50V; 5A; Ifsm: 300A; Ammo Pack; Ufmax: 1.2V Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 5A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 0.3kA Kind of package: Ammo Pack Max. forward voltage: 1.2V Max. load current: 60A Reverse recovery time: 300ns Body dimensions: Ø8x7.5mm Leakage current: 10µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SK84 | DIOTEC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 40V; 8A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 40V Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 140A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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SK84 | DIOTEC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 8A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 40V Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 140A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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SK84-3G | DIOTEC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 8A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 40V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 140A Kind of package: reel; tape |
на замовлення 9473 шт: термін постачання 14-30 дні (днів) |
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SK84-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 8A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 40V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 140A Kind of package: reel; tape Application: automotive industry Capacitance: 0.4nF |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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6.6SM8Z33A-AQ | DIOTEC SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 6.6kW; 36.7÷40.6V; 124A; unidirectional; DO218AB Peak pulse power dissipation: 6.6kW Application: automotive industry Max. off-state voltage: 33V Kind of package: reel; tape Semiconductor structure: unidirectional Leakage current: 10µA Case: DO218AB Type of diode: TVS Mounting: SMD Breakdown voltage: 36.7...40.6V Max. forward impulse current: 124A |
на замовлення 749 шт: термін постачання 14-30 дні (днів) |
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6.6SM8Z33A-Q | DIOTEC SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 6.6kW; 36.7÷40.6V; 124A; unidirectional; DO218AB Peak pulse power dissipation: 6.6kW Application: automotive industry Max. off-state voltage: 33V Kind of package: reel; tape Semiconductor structure: unidirectional Leakage current: 10µA Case: DO218AB Type of diode: TVS Mounting: SMD Breakdown voltage: 36.7...40.6V Max. forward impulse current: 124A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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4.6SM6Z33A-AQ | DIOTEC SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 4.6kW; 36.7÷40.6V; 86A; unidirectional; DO218AB Peak pulse power dissipation: 4.6kW Application: automotive industry Max. off-state voltage: 33V Kind of package: reel; tape Semiconductor structure: unidirectional Leakage current: 10µA Case: DO218AB Type of diode: TVS Mounting: SMD Breakdown voltage: 36.7...40.6V Manufacturer series: 4.6SM6Z Max. forward impulse current: 86A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMDT5111W | DIOTEC SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ Case: SOT323 Mounting: SMD Kind of package: reel; tape Base-emitter resistor: 10kΩ Frequency: 250MHz Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 10kΩ Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP |
на замовлення 2300 шт: термін постачання 14-30 дні (днів) |
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MMDT5211W | DIOTEC SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ Case: SOT323 Mounting: SMD Kind of package: reel; tape Base-emitter resistor: 10kΩ Frequency: 250MHz Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 10kΩ Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN |
на замовлення 2003 шт: термін постачання 14-30 дні (днів) |
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MMDT5111W-AQ | DIOTEC SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ Case: SOT323 Mounting: SMD Kind of package: reel; tape Base-emitter resistor: 10kΩ Frequency: 250MHz Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 10kΩ Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Application: automotive industry Type of transistor: PNP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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GBU10K | DIOTEC SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 10A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: in-tray Max. forward voltage: 1.1V |
на замовлення 7 шт: термін постачання 14-30 дні (днів) |
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GBU10G-T | DIOTEC SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 400V; If: 10A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 10A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Max. forward voltage: 1.1V |
на замовлення 697 шт: термін постачання 14-30 дні (днів) |
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GBU10D-T | DIOTEC SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 200V; If: 10A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 10A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Max. forward voltage: 1.1V |
на замовлення 848 шт: термін постачання 14-30 дні (днів) |
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GBU10M | DIOTEC SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 10A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Max. forward voltage: 1.1V Kind of package: in-tray |
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В кошику од. на суму грн. | ||||||||||||||||||
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GBU10A | DIOTEC SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 50V; If: 10A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 10A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: in-tray Max. forward voltage: 1.1V |
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В кошику од. на суму грн. | ||||||||||||||||||
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GBU10D | DIOTEC SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 200V; If: 10A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 10A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: in-tray Max. forward voltage: 1.1V |
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В кошику од. на суму грн. | ||||||||||||||||||
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FMMT493A | DIOTEC SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 1A; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 0.5W Case: SOT23 Current gain: 20...300 Mounting: SMD Frequency: 150MHz Pulsed collector current: 2A Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||||||||||||||||
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30CTQ045 | DIOTEC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; Ufmax: 620mV Type of diode: Schottky rectifying Case: TO220AB Mounting: THT Max. off-state voltage: 45V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.62V Kind of package: tube Max. forward impulse current: 265A Capacitance: 900pF |
на замовлення 1287 шт: термін постачання 14-30 дні (днів) |
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30CTQ045-AQ | DIOTEC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; Ufmax: 620mV Type of diode: Schottky rectifying Case: TO220AB Mounting: THT Max. off-state voltage: 45V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.62V Kind of package: tube Max. forward impulse current: 265A Application: automotive industry Capacitance: 900pF |
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В кошику од. на суму грн. | ||||||||||||||||||
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30CTQ045S | DIOTEC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 45V; 30A; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 30A Semiconductor structure: common cathode; double Max. forward voltage: 0.62V Kind of package: reel; tape Max. forward impulse current: 290A Features of semiconductor devices: high temperature Capacitance: 900pF |
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В кошику од. на суму грн. | ||||||||||||||||||
| 3991.31.3 V01 DEMOBOARD SOT-23 5-PIN LDO | DIOTEC SEMICONDUCTOR |
Category: Development kits - others Description: Dev.kit: demonstration Type of development kit: demonstration |
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В кошику од. на суму грн. | |||||||||||||||||||
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GBU10M-T | DIOTEC SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 10A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMF5.0CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 200W; 6.4÷7V; 21.74A; bidirectional; ±5%; SMF,SOD123F Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7V Max. forward impulse current: 21.74A Semiconductor structure: bidirectional Case: SMF; SOD123F Mounting: SMD Leakage current: 0.8mA Manufacturer series: SMF Tolerance: ±5% Kind of package: reel; tape |
на замовлення 3131 шт: термін постачання 14-30 дні (днів) |
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NUP2105AL-AQ | DIOTEC SEMICONDUCTOR |
Category: Protection diodes - arrays Description: Diode: TVS array; 26.2÷32V; 8A; 380W; bidirectional,double; ESD Type of diode: TVS array Breakdown voltage: 26.2...32V Peak pulse power dissipation: 380W Semiconductor structure: bidirectional; double Version: ESD Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Number of channels: 2 Application: automotive industry Kind of package: reel; tape Max. forward impulse current: 8A |
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В кошику од. на суму грн. | ||||||||||||||||||
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NUP2105AL | DIOTEC SEMICONDUCTOR |
Category: Protection diodes - arrays Description: Diode: TVS array; 26.2÷32V; 8A; 380W; bidirectional,double; ESD Type of diode: TVS array Breakdown voltage: 26.2...32V Peak pulse power dissipation: 380W Semiconductor structure: bidirectional; double Version: ESD Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Number of channels: 2 Kind of package: reel; tape Max. forward impulse current: 8A |
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В кошику од. на суму грн. | ||||||||||||||||||
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1.5SMC400CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 380÷420V; 2.7A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 342V Breakdown voltage: 380...420V Max. forward impulse current: 2.7A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Manufacturer series: 1.5SMC Tolerance: ±5% |
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В кошику од. на суму грн. | ||||||||||||||||||
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3.0SMCJ5.0CA | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 3kW; 6.4÷7.2V; 326A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.2V Max. forward impulse current: 326A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1.6mA Manufacturer series: 3.0SMCJ Tolerance: ±5% Kind of package: reel; tape |
на замовлення 3338 шт: термін постачання 14-30 дні (днів) |
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BZW04-20 | DIOTEC SEMICONDUCTOR |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 400W; 24V; unidirectional; ±5%; DO15; BZW04; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Manufacturer series: BZW04 Tolerance: ±5% Kind of package: Ammo Pack Leakage current: 5µA |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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BZW04-20B | DIOTEC SEMICONDUCTOR |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 24V; bidirectional; ±5%; DO15; 400W; BZW04; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Semiconductor structure: bidirectional Case: DO15 Mounting: THT Manufacturer series: BZW04 Tolerance: ±5% Kind of package: Ammo Pack Leakage current: 5µA |
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В кошику од. на суму грн. | ||||||||||||||||||
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S1M-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 1.5µs Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.1V Leakage current: 5µA Kind of package: reel; tape Max. forward impulse current: 30A Application: automotive industry Max. load current: 6A |
на замовлення 9557 шт: термін постачання 14-30 дні (днів) |
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ESD5Z15 | DIOTEC SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; ESD; 240W; 16.5V; 6A; unidirectional; SOD523F; reel,tape Type of diode: TVS Max. off-state voltage: 15V Breakdown voltage: 16.5V Semiconductor structure: unidirectional Case: SOD523F Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 6A Peak pulse power dissipation: 0.24kW Version: ESD Leakage current: 0.2µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ER3J | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 3A; 75ns; SMC; Ufmax: 1.7V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMC Max. forward voltage: 1.7V Leakage current: 5µA Kind of package: reel; tape Max. forward impulse current: 100A Max. load current: 15A |
на замовлення 163 шт: термін постачання 14-30 дні (днів) |
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| LDI1117-05H |
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Виробник: DIOTEC SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: LDI1117xxH
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 6.5...12V
Tolerance: ±1%
Voltage drop: 1.15V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: LDI1117xxH
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 6.5...12V
Tolerance: ±1%
Voltage drop: 1.15V
на замовлення 9665 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.82 грн |
| 53+ | 7.96 грн |
| 61+ | 6.80 грн |
| 74+ | 5.67 грн |
| 83+ | 5.04 грн |
| 100+ | 4.55 грн |
| 250+ | 4.14 грн |
| 500+ | 3.93 грн |
| 2500+ | 3.68 грн |
| DIJ2A7N90 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.7A; Idm: 6.5A; 65.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.7A
Pulsed drain current: 6.5A
Power dissipation: 65.7W
Case: ITO220AB
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 16.1nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.7A; Idm: 6.5A; 65.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.7A
Pulsed drain current: 6.5A
Power dissipation: 65.7W
Case: ITO220AB
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 16.1nC
Kind of channel: enhancement
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| MMFTP2319 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.2A; Idm: -30A; 0.75W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.2A
Pulsed drain current: -30A
Power dissipation: 0.75W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.2A; Idm: -30A; 0.75W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.2A
Pulsed drain current: -30A
Power dissipation: 0.75W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MMFTP2333 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -20A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -20A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MMFTP2301-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -10A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -10A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| MMFTP2301 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -10A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -10A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MMFTP2307A |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -24A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -24A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 28.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -24A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -24A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 28.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MMFTP2319-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.2A; Idm: -30A; 0.75W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.2A
Pulsed drain current: -30A
Power dissipation: 0.75W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.2A; Idm: -30A; 0.75W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.2A
Pulsed drain current: -30A
Power dissipation: 0.75W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| MMFTP2319A-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.2A; Idm: -30A; 750mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.2A
Pulsed drain current: -30A
Power dissipation: 0.75W
Case: SOT23
On-state resistance: 97mΩ
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.2A; Idm: -30A; 750mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.2A
Pulsed drain current: -30A
Power dissipation: 0.75W
Case: SOT23
On-state resistance: 97mΩ
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
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| P6SMBJ26CA-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 28.9÷32.1V; 14.3A; bidirectional; ±5%; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...32.1V
Max. forward impulse current: 14.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: P6SMBJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 28.9÷32.1V; 14.3A; bidirectional; ±5%; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...32.1V
Max. forward impulse current: 14.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: P6SMBJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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Мінімальне замовлення: 5 шт
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| 1.0SMBJ26CA |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 31.1÷34.4V; 23.8A; bidirectional; ±5%; SMB; 1.0SMBJ
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 23.8A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.0SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 31.1÷34.4V; 23.8A; bidirectional; ±5%; SMB; 1.0SMBJ
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 23.8A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.0SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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| 1.0SMBJ26CA-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 31.1÷34.4V; 23.8A; bidirectional; ±5%; SMB; 1.0SMBJ
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 23.8A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.0SMBJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 31.1÷34.4V; 23.8A; bidirectional; ±5%; SMB; 1.0SMBJ
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 23.8A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.0SMBJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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| 1.5SMCJ10CA |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 11.1÷12.3V; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 1.5SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 11.1÷12.3V; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 1.5SMCJ
Tolerance: ±5%
Kind of package: reel; tape
на замовлення 2849 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 30.36 грн |
| 21+ | 19.90 грн |
| 27+ | 15.75 грн |
| 100+ | 11.86 грн |
| 250+ | 10.61 грн |
| 500+ | 9.87 грн |
| 1000+ | 9.45 грн |
| 1.5SMCJ10CA-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 11.1÷12.3V; 88.2A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 88.2A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 1.5SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 11.1÷12.3V; 88.2A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 88.2A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: 1.5SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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| 3.0SMCJ10CA-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 11.1÷12.3V; 176.3A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 176.3A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 10µA
Manufacturer series: 3.0SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 11.1÷12.3V; 176.3A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 176.3A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 10µA
Manufacturer series: 3.0SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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| 3.0SMCJ10CA |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 11.1÷12.3V; 176.3A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 176.3A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 10µA
Manufacturer series: 3.0SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 11.1÷12.3V; 176.3A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 176.3A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 10µA
Manufacturer series: 3.0SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| BZX84C2V4-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Application: automotive industry
на замовлення 2650 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.22 грн |
| 32+ | 13.02 грн |
| 60+ | 6.93 грн |
| 107+ | 3.91 грн |
| 250+ | 2.60 грн |
| 1000+ | 1.65 грн |
| DI045N10PT-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 200A; 54W; PQFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 54W
Case: PQFN3X3
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 200A
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 200A; 54W; PQFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 54W
Case: PQFN3X3
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 200A
Application: automotive industry
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| DI045N10PQ-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 400A; 40W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Power dissipation: 40W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 400A
Gate charge: 56nC
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 400A; 40W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Power dissipation: 40W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 400A
Gate charge: 56nC
Application: automotive industry
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| DI045N10PQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 400A; 40W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 40W
Case: PQFN5X6
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 400A
Gate charge: 56nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 400A; 40W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 40W
Case: PQFN5X6
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 400A
Gate charge: 56nC
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| 1.5KE39CA |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 39V; 29A; bidirectional; ±5%; Ø5.4x7.5mm; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Kind of package: Ammo Pack
Tolerance: ±5%
Body dimensions: Ø5.4x7.5mm
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 39V; 29A; bidirectional; ±5%; Ø5.4x7.5mm; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Kind of package: Ammo Pack
Tolerance: ±5%
Body dimensions: Ø5.4x7.5mm
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| P4KE250A |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 400W; 250V; 1.2A; unidirectional; ±5%; DO15; P4KE
Manufacturer series: P4KE
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 214V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: DO15
Type of diode: TVS
Tolerance: ±5%
Mounting: THT
Breakdown voltage: 250V
Max. forward impulse current: 1.2A
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 400W; 250V; 1.2A; unidirectional; ±5%; DO15; P4KE
Manufacturer series: P4KE
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 214V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: DO15
Type of diode: TVS
Tolerance: ±5%
Mounting: THT
Breakdown voltage: 250V
Max. forward impulse current: 1.2A
на замовлення 3961 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 19.02 грн |
| 33+ | 12.77 грн |
| 100+ | 11.28 грн |
| 500+ | 10.12 грн |
| P4SMA250A |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 250V; 1.2A; unidirectional; ±5%; SMA; reel,tape
Manufacturer series: P4SMA
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 214V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SMA
Type of diode: TVS
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 250V
Max. forward impulse current: 1.2A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 250V; 1.2A; unidirectional; ±5%; SMA; reel,tape
Manufacturer series: P4SMA
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 214V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SMA
Type of diode: TVS
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 250V
Max. forward impulse current: 1.2A
на замовлення 7213 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 8.04 грн |
| 61+ | 6.80 грн |
| 100+ | 6.30 грн |
| 250+ | 5.97 грн |
| 500+ | 5.39 грн |
| 1000+ | 5.31 грн |
| B125C1500A |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 250V; If: 1.5A; Ifsm: 50A
Max. forward impulse current: 50A
Version: flat
Features of semiconductor devices: UL approval
Leads: flat pin
Max. off-state voltage: 250V
Electrical mounting: THT
Dimensions: 19x3.5x10mm
Load current: 1.5A
Kind of package: in-tray
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 250V; If: 1.5A; Ifsm: 50A
Max. forward impulse current: 50A
Version: flat
Features of semiconductor devices: UL approval
Leads: flat pin
Max. off-state voltage: 250V
Electrical mounting: THT
Dimensions: 19x3.5x10mm
Load current: 1.5A
Kind of package: in-tray
Type of bridge rectifier: single-phase
на замовлення 81 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 85.72 грн |
| 7+ | 62.68 грн |
| 10+ | 52.90 грн |
| ESDB15C |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Protection diodes - arrays
Description: Diode: TVS array; 17.1÷20.3V; 5A; 200W; bidirectional,double; ESD
Type of diode: TVS array
Breakdown voltage: 17.1...20.3V
Peak pulse power dissipation: 0.2kW
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 15V
Leakage current: 50nA
Number of channels: 2
Capacitance: 16pF
Kind of package: reel; tape
Max. forward impulse current: 5A
Application: CAN
Semiconductor structure: bidirectional; double
Category: Protection diodes - arrays
Description: Diode: TVS array; 17.1÷20.3V; 5A; 200W; bidirectional,double; ESD
Type of diode: TVS array
Breakdown voltage: 17.1...20.3V
Peak pulse power dissipation: 0.2kW
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 15V
Leakage current: 50nA
Number of channels: 2
Capacitance: 16pF
Kind of package: reel; tape
Max. forward impulse current: 5A
Application: CAN
Semiconductor structure: bidirectional; double
на замовлення 2620 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.07 грн |
| 500+ | 2.84 грн |
| 1N4934 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; DO41; Ammo Pack; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Kind of package: Ammo Pack
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Max. load current: 10A
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; DO41; Ammo Pack; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Kind of package: Ammo Pack
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Max. load current: 10A
на замовлення 4883 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.82 грн |
| 93+ | 4.48 грн |
| 131+ | 3.17 грн |
| 500+ | 2.36 грн |
| 1000+ | 2.14 грн |
| 5KP90CA |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 100÷115.5V; bidirectional; P600; 5kW; 5KP; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 90V
Breakdown voltage: 100...115.5V
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 10µA
Kind of package: Ammo Pack
Manufacturer series: 5KP
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 100÷115.5V; bidirectional; P600; 5kW; 5KP; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 90V
Breakdown voltage: 100...115.5V
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 10µA
Kind of package: Ammo Pack
Manufacturer series: 5KP
на замовлення 964 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 63.40 грн |
| 11+ | 40.30 грн |
| 25+ | 33.00 грн |
| 100+ | 27.53 грн |
| 500+ | 26.95 грн |
| MR820 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 5A; Ifsm: 300A; Ammo Pack; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.3kA
Kind of package: Ammo Pack
Max. forward voltage: 1.2V
Max. load current: 60A
Reverse recovery time: 300ns
Body dimensions: Ø8x7.5mm
Leakage current: 10µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 5A; Ifsm: 300A; Ammo Pack; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.3kA
Kind of package: Ammo Pack
Max. forward voltage: 1.2V
Max. load current: 60A
Reverse recovery time: 300ns
Body dimensions: Ø8x7.5mm
Leakage current: 10µA
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| SK84 |
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 140A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 140A
Kind of package: reel; tape
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Мінімальне замовлення: 3 шт
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| SK84 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 140A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 140A
Kind of package: reel; tape
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Мінімальне замовлення: 3 шт
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| SK84-3G |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 140A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 140A
Kind of package: reel; tape
на замовлення 9473 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.72 грн |
| 18+ | 23.71 грн |
| 100+ | 15.34 грн |
| 500+ | 11.61 грн |
| 1000+ | 10.53 грн |
| 3000+ | 9.04 грн |
| 6000+ | 8.95 грн |
| SK84-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 140A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 0.4nF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 140A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 0.4nF
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| 6.6SM8Z33A-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 36.7÷40.6V; 124A; unidirectional; DO218AB
Peak pulse power dissipation: 6.6kW
Application: automotive industry
Max. off-state voltage: 33V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 10µA
Case: DO218AB
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 124A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 36.7÷40.6V; 124A; unidirectional; DO218AB
Peak pulse power dissipation: 6.6kW
Application: automotive industry
Max. off-state voltage: 33V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 10µA
Case: DO218AB
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 124A
на замовлення 749 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 116.08 грн |
| 5+ | 97.84 грн |
| 10+ | 87.06 грн |
| 25+ | 77.11 грн |
| 250+ | 75.45 грн |
| 6.6SM8Z33A-Q |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 36.7÷40.6V; 124A; unidirectional; DO218AB
Peak pulse power dissipation: 6.6kW
Application: automotive industry
Max. off-state voltage: 33V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 10µA
Case: DO218AB
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 124A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 36.7÷40.6V; 124A; unidirectional; DO218AB
Peak pulse power dissipation: 6.6kW
Application: automotive industry
Max. off-state voltage: 33V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 10µA
Case: DO218AB
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 124A
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| 4.6SM6Z33A-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4.6kW; 36.7÷40.6V; 86A; unidirectional; DO218AB
Peak pulse power dissipation: 4.6kW
Application: automotive industry
Max. off-state voltage: 33V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 10µA
Case: DO218AB
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 36.7...40.6V
Manufacturer series: 4.6SM6Z
Max. forward impulse current: 86A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4.6kW; 36.7÷40.6V; 86A; unidirectional; DO218AB
Peak pulse power dissipation: 4.6kW
Application: automotive industry
Max. off-state voltage: 33V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 10µA
Case: DO218AB
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 36.7...40.6V
Manufacturer series: 4.6SM6Z
Max. forward impulse current: 86A
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| MMDT5111W |
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Виробник: DIOTEC SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
на замовлення 2300 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 180+ | 2.72 грн |
| 340+ | 1.29 грн |
| 500+ | 1.15 грн |
| MMDT5211W |
Виробник: DIOTEC SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
на замовлення 2003 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 160+ | 2.99 грн |
| 300+ | 1.42 грн |
| 500+ | 1.27 грн |
| MMDT5111W-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Application: automotive industry
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Application: automotive industry
Type of transistor: PNP
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| GBU10K |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1.1V
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 102.68 грн |
| GBU10G-T |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Max. forward voltage: 1.1V
на замовлення 697 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 75.90 грн |
| 7+ | 63.01 грн |
| 20+ | 55.55 грн |
| 100+ | 51.41 грн |
| GBU10D-T |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Max. forward voltage: 1.1V
на замовлення 848 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 47.26 грн |
| 20+ | 46.43 грн |
| GBU10M |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Max. forward voltage: 1.1V
Kind of package: in-tray
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Max. forward voltage: 1.1V
Kind of package: in-tray
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| GBU10A |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1.1V
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| GBU10D |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1.1V
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| FMMT493A |
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Виробник: DIOTEC SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Current gain: 20...300
Mounting: SMD
Frequency: 150MHz
Pulsed collector current: 2A
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Current gain: 20...300
Mounting: SMD
Frequency: 150MHz
Pulsed collector current: 2A
Kind of package: reel; tape
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| 30CTQ045 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; Ufmax: 620mV
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.62V
Kind of package: tube
Max. forward impulse current: 265A
Capacitance: 900pF
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; Ufmax: 620mV
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.62V
Kind of package: tube
Max. forward impulse current: 265A
Capacitance: 900pF
на замовлення 1287 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 125.01 грн |
| 10+ | 53.06 грн |
| 30CTQ045-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; Ufmax: 620mV
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.62V
Kind of package: tube
Max. forward impulse current: 265A
Application: automotive industry
Capacitance: 900pF
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; Ufmax: 620mV
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.62V
Kind of package: tube
Max. forward impulse current: 265A
Application: automotive industry
Capacitance: 900pF
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| 30CTQ045S |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.62V
Kind of package: reel; tape
Max. forward impulse current: 290A
Features of semiconductor devices: high temperature
Capacitance: 900pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.62V
Kind of package: reel; tape
Max. forward impulse current: 290A
Features of semiconductor devices: high temperature
Capacitance: 900pF
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| 3991.31.3 V01 DEMOBOARD SOT-23 5-PIN LDO |
Виробник: DIOTEC SEMICONDUCTOR
Category: Development kits - others
Description: Dev.kit: demonstration
Type of development kit: demonstration
Category: Development kits - others
Description: Dev.kit: demonstration
Type of development kit: demonstration
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| GBU10M-T |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Max. forward voltage: 1.1V
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| SMF5.0CA |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 6.4÷7V; 21.74A; bidirectional; ±5%; SMF,SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 21.74A
Semiconductor structure: bidirectional
Case: SMF; SOD123F
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMF
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 6.4÷7V; 21.74A; bidirectional; ±5%; SMF,SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 21.74A
Semiconductor structure: bidirectional
Case: SMF; SOD123F
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMF
Tolerance: ±5%
Kind of package: reel; tape
на замовлення 3131 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 17.86 грн |
| 36+ | 11.77 грн |
| 44+ | 9.62 грн |
| 100+ | 5.14 грн |
| 500+ | 3.71 грн |
| 1000+ | 3.63 грн |
| NUP2105AL-AQ |
Виробник: DIOTEC SEMICONDUCTOR
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 8A; 380W; bidirectional,double; ESD
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 380W
Semiconductor structure: bidirectional; double
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
Max. forward impulse current: 8A
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 8A; 380W; bidirectional,double; ESD
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 380W
Semiconductor structure: bidirectional; double
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
Max. forward impulse current: 8A
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| NUP2105AL |
Виробник: DIOTEC SEMICONDUCTOR
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 8A; 380W; bidirectional,double; ESD
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 380W
Semiconductor structure: bidirectional; double
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Kind of package: reel; tape
Max. forward impulse current: 8A
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 8A; 380W; bidirectional,double; ESD
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 380W
Semiconductor structure: bidirectional; double
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Kind of package: reel; tape
Max. forward impulse current: 8A
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| 1.5SMC400CA |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 380÷420V; 2.7A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 380...420V
Max. forward impulse current: 2.7A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: 1.5SMC
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 380÷420V; 2.7A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 380...420V
Max. forward impulse current: 2.7A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: 1.5SMC
Tolerance: ±5%
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| 3.0SMCJ5.0CA |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.2V; 326A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.2V
Max. forward impulse current: 326A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: 3.0SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.2V; 326A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.2V
Max. forward impulse current: 326A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: 3.0SMCJ
Tolerance: ±5%
Kind of package: reel; tape
на замовлення 3338 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 56.25 грн |
| 21+ | 20.06 грн |
| 25+ | 17.74 грн |
| 250+ | 16.17 грн |
| BZW04-20 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 400W; 24V; unidirectional; ±5%; DO15; BZW04; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: BZW04
Tolerance: ±5%
Kind of package: Ammo Pack
Leakage current: 5µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 400W; 24V; unidirectional; ±5%; DO15; BZW04; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: BZW04
Tolerance: ±5%
Kind of package: Ammo Pack
Leakage current: 5µA
товару немає в наявності
Мінімальне замовлення: 4000 шт
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од. на суму грн.
| BZW04-20B |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 24V; bidirectional; ±5%; DO15; 400W; BZW04; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Manufacturer series: BZW04
Tolerance: ±5%
Kind of package: Ammo Pack
Leakage current: 5µA
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 24V; bidirectional; ±5%; DO15; 400W; BZW04; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Manufacturer series: BZW04
Tolerance: ±5%
Kind of package: Ammo Pack
Leakage current: 5µA
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В кошику
од. на суму грн.
| S1M-AQ |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Leakage current: 5µA
Kind of package: reel; tape
Max. forward impulse current: 30A
Application: automotive industry
Max. load current: 6A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Leakage current: 5µA
Kind of package: reel; tape
Max. forward impulse current: 30A
Application: automotive industry
Max. load current: 6A
на замовлення 9557 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.14 грн |
| 85+ | 4.89 грн |
| 133+ | 3.13 грн |
| 500+ | 2.35 грн |
| 1000+ | 2.09 грн |
| 2000+ | 1.88 грн |
| 7500+ | 1.56 грн |
| ESD5Z15 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 240W; 16.5V; 6A; unidirectional; SOD523F; reel,tape
Type of diode: TVS
Max. off-state voltage: 15V
Breakdown voltage: 16.5V
Semiconductor structure: unidirectional
Case: SOD523F
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 6A
Peak pulse power dissipation: 0.24kW
Version: ESD
Leakage current: 0.2µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 240W; 16.5V; 6A; unidirectional; SOD523F; reel,tape
Type of diode: TVS
Max. off-state voltage: 15V
Breakdown voltage: 16.5V
Semiconductor structure: unidirectional
Case: SOD523F
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 6A
Peak pulse power dissipation: 0.24kW
Version: ESD
Leakage current: 0.2µA
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В кошику
од. на суму грн.
| ER3J |
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Виробник: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.7V
Leakage current: 5µA
Kind of package: reel; tape
Max. forward impulse current: 100A
Max. load current: 15A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.7V
Leakage current: 5µA
Kind of package: reel; tape
Max. forward impulse current: 100A
Max. load current: 15A
на замовлення 163 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.89 грн |
| 26+ | 16.42 грн |
| 30+ | 14.18 грн |
| 100+ | 9.29 грн |

































