Продукція > GLOBAL POWER TECHNOLOGY CO. LTD > Всі товари виробника GLOBAL POWER TECHNOLOGY CO. LTD (26) > Сторінка 1 з 1
| Фото | Назва | Виробник | Інформація |
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G3S06004J | Global Power Technology Co. Ltd |
Description: DIODE SIL CARB 600V 11A TO220ISO Packaging: Bulk Package / Case: TO-220-2 Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 181pF @ 0V, 1MHz Current - Average Rectified (Io): 11A Supplier Device Package: TO-220ISO Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
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G3S06006J | Global Power Technology Co. Ltd |
Description: DIODE SIC 600V 21.5A TO220ISO Packaging: Bulk Package / Case: TO-220-2 Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 424pF @ 0V, 1MHz Current - Average Rectified (Io): 21.5A Supplier Device Package: TO-220ISO Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
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G3S06503A | Global Power Technology Co. Ltd |
 Description: DIODE SIC 650V 11.5A TO220ACPackaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 181pF @ 0V, 1MHz Current - Average Rectified (Io): 11.5A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
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G3S06504B | Global Power Technology Co. Ltd |
Description: SIC SCHOTTKY DIODE 650V 4A 3-PIN |
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G3S06506A | Global Power Technology Co. Ltd |
Description: SIC SCHOTTKY DIODE 650V 6A 2-PIN |
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G3S06508J | Global Power Technology Co. Ltd |
Description: DIODE SIL CARB 650V 23A TO220ISO Packaging: Bulk Package / Case: TO-220-2 Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 550pF @ 0V, 1MHz Current - Average Rectified (Io): 23A Supplier Device Package: TO-220ISO Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
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G3S06540B | Global Power Technology Co. Ltd |
Description: SIC SCHOTTKY DIODE 650V 40A 3-PI |
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G3S12003A | Global Power Technology Co. Ltd |
Description: DIODE SIL CARB 1.2KV 12A TO220AC Packaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 260pF @ 0V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
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G3S12003C | Global Power Technology Co. Ltd |
Description: SIC SCHOTTKY DIODE 1200V 3A 2-PI |
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G3S12005A | Global Power Technology Co. Ltd |
Description: SIC SCHOTTKY DIODE 1200V 5A 2-PI |
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G3S12010B | Global Power Technology Co. Ltd |
Description: SIC SCHOTTKY DIODE 1200V 10A 3-P |
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G3S17010A | Global Power Technology Co. Ltd |
Description: DIODE SIL CARB 1.7KV 24A TO220AC Packaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1500pF @ 0V, 1MHz Current - Average Rectified (Io): 24A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 1700 V |
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G4S06508CT | Global Power Technology Co. Ltd |
Description: DIODE SIL CARBIDE 650V 24A TO252 Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 395pF @ 0V, 1MHz Current - Average Rectified (Io): 24A Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
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G4S06508JT | Global Power Technology Co. Ltd |
Description: DIODE SIC 650V 23.5A TO220ISO Packaging: Bulk Package / Case: TO-220-2 Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 395pF @ 0V, 1MHz Current - Average Rectified (Io): 23.5A Supplier Device Package: TO-220ISO Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
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G4S06510JT | Global Power Technology Co. Ltd |
Description: DIODE SIC 650V 31.2A TO220ISO Packaging: Bulk Package / Case: TO-220-2 Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 550pF @ 0V, 1MHz Current - Average Rectified (Io): 31.2A Supplier Device Package: TO-220ISO Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
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G4S06510QT | Global Power Technology Co. Ltd |
Description: SIC SCHOTTKY DIODE 650V 10A DFN8 |
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G4S06515HT | Global Power Technology Co. Ltd |
Description: DIODE SIL CARB 650V 23.8A TO220F |
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G4S06515QT | Global Power Technology Co. Ltd |
Description: SIC SCHOTTKY DIODE 650V 15A DFN8 |
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G4S06520BT | Global Power Technology Co. Ltd |
Description: SIC SCHOTTKY DIODE 650V 20A 3-PI |
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G4S06540PT | Global Power Technology Co. Ltd |
Description: SIC SCHOTTKY DIODE 650V 40A 2-PI |
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G4S12020D | Global Power Technology Co. Ltd |
Description: SIC SCHOTTKY DIODE 1200V 20A 2-P |
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G5S06505CT | Global Power Technology Co. Ltd |
Description: DIODE SIL CARBIDE 650V 24A TO252 Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 395pF @ 0V, 1MHz Current - Average Rectified (Io): 24A Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
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G5S06506CT | Global Power Technology Co. Ltd |
Description: DIODE SIL CARBIDE 650V 24A TO252 Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 395pF @ 0V, 1MHz Current - Average Rectified (Io): 24A Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
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G5S06510QT | Global Power Technology Co. Ltd |
Description: SIC SCHOTTKY DIODE 650V 10A DFN8 |
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G5S12008A | Global Power Technology Co. Ltd |
Description: SIC SCHOTTKY DIODE 1200V 8A 2-PI |
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G5S12010PM | Global Power Technology Co. Ltd |
Description: SIC SCHOTTKY DIODE 1200V 10A 2-P |
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| G3S06004J |
Виробник: Global Power Technology Co. Ltd
Description: DIODE SIL CARB 600V 11A TO220ISO
Packaging: Bulk
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 181pF @ 0V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-220ISO
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE SIL CARB 600V 11A TO220ISO
Packaging: Bulk
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 181pF @ 0V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-220ISO
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
| G3S06006J |
Виробник: Global Power Technology Co. Ltd
Description: DIODE SIC 600V 21.5A TO220ISO
Packaging: Bulk
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 424pF @ 0V, 1MHz
Current - Average Rectified (Io): 21.5A
Supplier Device Package: TO-220ISO
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE SIC 600V 21.5A TO220ISO
Packaging: Bulk
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 424pF @ 0V, 1MHz
Current - Average Rectified (Io): 21.5A
Supplier Device Package: TO-220ISO
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
| G3S06503A |
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Виробник: Global Power Technology Co. Ltd
Description: DIODE SIC 650V 11.5A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 181pF @ 0V, 1MHz
Current - Average Rectified (Io): 11.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIC 650V 11.5A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 181pF @ 0V, 1MHz
Current - Average Rectified (Io): 11.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
| G3S06504B |
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Виробник: Global Power Technology Co. Ltd
Description: SIC SCHOTTKY DIODE 650V 4A 3-PIN
Description: SIC SCHOTTKY DIODE 650V 4A 3-PIN
товар відсутній
| G3S06506A |
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Виробник: Global Power Technology Co. Ltd
Description: SIC SCHOTTKY DIODE 650V 6A 2-PIN
Description: SIC SCHOTTKY DIODE 650V 6A 2-PIN
товар відсутній
| G3S06508J |
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Виробник: Global Power Technology Co. Ltd
Description: DIODE SIL CARB 650V 23A TO220ISO
Packaging: Bulk
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-220ISO
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARB 650V 23A TO220ISO
Packaging: Bulk
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-220ISO
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
| G3S06540B |
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Виробник: Global Power Technology Co. Ltd
Description: SIC SCHOTTKY DIODE 650V 40A 3-PI
Description: SIC SCHOTTKY DIODE 650V 40A 3-PI
товар відсутній
| G3S12003A |
Виробник: Global Power Technology Co. Ltd
Description: DIODE SIL CARB 1.2KV 12A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 0V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 12A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 0V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
| G3S12003C |
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Виробник: Global Power Technology Co. Ltd
Description: SIC SCHOTTKY DIODE 1200V 3A 2-PI
Description: SIC SCHOTTKY DIODE 1200V 3A 2-PI
товар відсутній
| G3S12005A |
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Виробник: Global Power Technology Co. Ltd
Description: SIC SCHOTTKY DIODE 1200V 5A 2-PI
Description: SIC SCHOTTKY DIODE 1200V 5A 2-PI
товар відсутній
| G3S12010B |
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Виробник: Global Power Technology Co. Ltd
Description: SIC SCHOTTKY DIODE 1200V 10A 3-P
Description: SIC SCHOTTKY DIODE 1200V 10A 3-P
товар відсутній
| G3S17010A |
Виробник: Global Power Technology Co. Ltd
Description: DIODE SIL CARB 1.7KV 24A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1700 V
Description: DIODE SIL CARB 1.7KV 24A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1700 V
товар відсутній
| G4S06508CT |
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Виробник: Global Power Technology Co. Ltd
Description: DIODE SIL CARBIDE 650V 24A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 24A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
| G4S06508JT |
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Виробник: Global Power Technology Co. Ltd
Description: DIODE SIC 650V 23.5A TO220ISO
Packaging: Bulk
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 23.5A
Supplier Device Package: TO-220ISO
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIC 650V 23.5A TO220ISO
Packaging: Bulk
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 23.5A
Supplier Device Package: TO-220ISO
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
| G4S06510JT |
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Виробник: Global Power Technology Co. Ltd
Description: DIODE SIC 650V 31.2A TO220ISO
Packaging: Bulk
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 31.2A
Supplier Device Package: TO-220ISO
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIC 650V 31.2A TO220ISO
Packaging: Bulk
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 31.2A
Supplier Device Package: TO-220ISO
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
| G4S06510QT |
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Виробник: Global Power Technology Co. Ltd
Description: SIC SCHOTTKY DIODE 650V 10A DFN8
Description: SIC SCHOTTKY DIODE 650V 10A DFN8
товар відсутній
| G4S06515HT |
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Виробник: Global Power Technology Co. Ltd
Description: DIODE SIL CARB 650V 23.8A TO220F
Description: DIODE SIL CARB 650V 23.8A TO220F
товар відсутній
| G4S06515QT |
|
Виробник: Global Power Technology Co. Ltd
Description: SIC SCHOTTKY DIODE 650V 15A DFN8
Description: SIC SCHOTTKY DIODE 650V 15A DFN8
товар відсутній
| G4S06520BT |
|
Виробник: Global Power Technology Co. Ltd
Description: SIC SCHOTTKY DIODE 650V 20A 3-PI
Description: SIC SCHOTTKY DIODE 650V 20A 3-PI
товар відсутній
| G4S06540PT |
|
Виробник: Global Power Technology Co. Ltd
Description: SIC SCHOTTKY DIODE 650V 40A 2-PI
Description: SIC SCHOTTKY DIODE 650V 40A 2-PI
товар відсутній
| G4S12020D |
|
Виробник: Global Power Technology Co. Ltd
Description: SIC SCHOTTKY DIODE 1200V 20A 2-P
Description: SIC SCHOTTKY DIODE 1200V 20A 2-P
товар відсутній
| G5S06505CT |
|
Виробник: Global Power Technology Co. Ltd
Description: DIODE SIL CARBIDE 650V 24A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 24A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
| G5S06506CT |
|
Виробник: Global Power Technology Co. Ltd
Description: DIODE SIL CARBIDE 650V 24A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 24A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
| G5S06510QT |
|
Виробник: Global Power Technology Co. Ltd
Description: SIC SCHOTTKY DIODE 650V 10A DFN8
Description: SIC SCHOTTKY DIODE 650V 10A DFN8
товар відсутній
| G5S12008A |
|
Виробник: Global Power Technology Co. Ltd
Description: SIC SCHOTTKY DIODE 1200V 8A 2-PI
Description: SIC SCHOTTKY DIODE 1200V 8A 2-PI
товар відсутній
| G5S12010PM |
|
Виробник: Global Power Technology Co. Ltd
Description: SIC SCHOTTKY DIODE 1200V 10A 2-P
Description: SIC SCHOTTKY DIODE 1200V 10A 2-P
товар відсутній