Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (126524) > Сторінка 398 з 2109
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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2EDF7275KXUMA2 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 13TFLGAPackaging: Tape & Reel (TR) Package / Case: 13-TFLGA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 20V Input Type: Non-Inverting Supplier Device Package: PG-TFLGA-13-1 Rise / Fall Time (Typ): 6.5ns, 4.5ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel, P-Channel) Logic Voltage - VIL, VIH: -, 1.65V Current - Peak Output (Source, Sink): 4A, 8A Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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2EDF7275KXUMA2 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 13TFLGADigiKey Programmable: Not Verified Part Status: Active Current - Peak Output (Source, Sink): 4A, 8A Logic Voltage - VIL, VIH: -, 1.65V Gate Type: MOSFET (N-Channel, P-Channel) Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Independent Rise / Fall Time (Typ): 6.5ns, 4.5ns Supplier Device Package: PG-TFLGA-13-1 Input Type: Non-Inverting Voltage - Supply: 20V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 13-TFLGA Packaging: Cut Tape (CT) |
на замовлення 240 шт: термін постачання 21-31 дні (днів) |
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BSC146N10LS5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 44A TDSON-8-6Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V Power Dissipation (Max): 2.5W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 23µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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IRFSL3107PBF | Infineon Technologies |
Description: MOSFET N-CH 75V 195A TO262Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 140A, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9370 pF @ 50 V |
на замовлення 4390 шт: термін постачання 21-31 дні (днів) |
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ISP75DP06LMXTSA1 | Infineon Technologies |
Description: MOSFET P-CH 60V 1.1A SOT223-4Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-SOT223-4 Vgs(th) (Max) @ Id: 2V @ 77µA Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 1.1A, 10V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
на замовлення 1921 шт: термін постачання 21-31 дні (днів) |
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IFX9202EDXUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER DSO36-72Qualification: AEC-Q100 Grade: Automotive Load Type: Inductive Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO Supplier Device Package: PG-DSO-36-72 Voltage - Load: 5V ~ 36V Applications: DC Motors, General Purpose Rds On (Typ): 100mOhm LS + HS Voltage - Supply: 2.9V ~ 5.5V Output Configuration: Half Bridge (2) Operating Temperature: -40°C ~ 125°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IFX9202EDXUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER DSO36-72Packaging: Cut Tape (CT) Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 2.9V ~ 5.5V Rds On (Typ): 100mOhm LS + HS Applications: DC Motors, General Purpose Voltage - Load: 5V ~ 36V Supplier Device Package: PG-DSO-36-72 Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO Load Type: Inductive Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FS450R12OE4BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 660A 2250WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 660 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 2250 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 28 nF @ 25 V |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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FS300R12OE4BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 460A 1650WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 460 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1650 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAT240AE6327 | Infineon Technologies |
Description: DIODE ARRAY SCHOTTKY 240V SOT-23Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 400 mA Voltage - DC Reverse (Vr) (Max): 240 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: PG-SOT23 Current - Average Rectified (Io) (per Diode): 400mA (DC) Diode Configuration: 1 Pair Series Connection Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk Mounting Type: Surface Mount |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PEF 21624 E V1.2-G | Infineon Technologies |
Description: IC TELECOM INTERFACE LBGA-324Packaging: Tray Package / Case: 324-LBGA Mounting Type: Surface Mount Function: Symmetrical DSL Front End (SDFE) Interface: ISDN, SHDSL Operating Temperature: -40°C ~ 85°C Supplier Device Package: P-LBGA-324 Number of Circuits: 1 |
товару немає в наявності |
Мінімальне замовлення: 84 шт В кошику од. на суму грн. | |||||||||||||||
| PEF 22623 E V2.1 | Infineon Technologies |
Description: IC TELECOM INTERFACE LBGA-256Packaging: Tray Package / Case: 256-LBGA Mounting Type: Surface Mount Function: One Chip Rate Adaptive Transceiver Interface: SHDSL Supplier Device Package: PG-LBGA-256-1 Number of Circuits: 1 |
товару немає в наявності |
Мінімальне замовлення: 45 шт В кошику од. на суму грн. | |||||||||||||||
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PEF 2426 H V1.1 D | Infineon Technologies |
Description: IC TELECOM INTERFACE MQFP-44Packaging: Tray Package / Case: 44-QFP Mounting Type: Surface Mount Function: High Voltage Power Controller Interface: ISDN, SHDSL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 6V Current - Supply: 700µA Supplier Device Package: P-MQFP-44 Part Status: Obsolete Number of Circuits: 4 |
товару немає в наявності |
Мінімальне замовлення: 96 шт В кошику од. на суму грн. | ||||||||||||||
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PEF 2426 H V1.1 GD | Infineon Technologies |
Description: IC TELECOM INTERFACE MQFP-44Packaging: Tape & Reel (TR) Package / Case: 44-QFP Mounting Type: Surface Mount Function: High Voltage Power Controller Interface: ISDN, SHDSL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 6V Current - Supply: 700µA Supplier Device Package: P-MQFP-44 Part Status: Obsolete Number of Circuits: 4 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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PEF 24622 E V2.1 | Infineon Technologies |
Description: IC TELECOM INTERFACE 388BGANumber of Circuits: 4 Supplier Device Package: PG-BGA-388-2 Interface: HDLC, SHDSL, TDM Function: One Chip Rate Adaptive Transceiver Mounting Type: Surface Mount Package / Case: 388-BBGA Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 24 шт В кошику од. на суму грн. | ||||||||||||||
| PEF 24624 E V1.2 | Infineon Technologies |
Description: IC TELECOM INTERFACE LBGA-324Number of Circuits: 4 Supplier Device Package: P-LBGA-324 Operating Temperature: -40°C ~ 85°C Interface: ISDN, SHDSL Function: Symmetrical DSL Front End (SDFE) Mounting Type: Surface Mount Package / Case: 324-LBGA Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PEF 24624 E V1.2-G | Infineon Technologies |
Description: IC TELECOM INTERFACE LBGA-324Number of Circuits: 4 Supplier Device Package: P-LBGA-324 Interface: ISDN, SHDSL Function: Symmetrical DSL Front End (SDFE) Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 324-LBGA Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PEF 24624 E V2.1-G | Infineon Technologies |
Description: IC TELECOM INTERFACE LBGA-324Number of Circuits: 4 Supplier Device Package: P-LBGA-324 Operating Temperature: -40°C ~ 85°C Interface: ISDN, SHDSL Function: Symmetrical DSL Front End (SDFE) Mounting Type: Surface Mount Package / Case: 324-LBGA Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PEF 24625 E V1.2 | Infineon Technologies |
Description: IC TELECOM INTERFACE 484BGAPower (Watts): 500 mW Number of Circuits: 1 Supplier Device Package: 484-BGA (27x27) Operating Temperature: -40°C ~ 85°C Interface: DSL, SHDSL, TDM Function: Symmetrical DSL Controller (SDC-16i) Mounting Type: Surface Mount Package / Case: 484-BBGA Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PEF 24624 E V2.2-G | Infineon Technologies |
Description: IC TELECOM INTERFACE LBGA-324Power (Watts): 500 mW Number of Circuits: 4 Supplier Device Package: P-LBGA-324 Operating Temperature: -40°C ~ 85°C Interface: DSL, SHDSL, TDM Function: Symmetrical DSL Front End (SDFE) Mounting Type: Surface Mount Package / Case: 324-LBGA Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 84 шт В кошику од. на суму грн. | |||||||||||||||
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IPD65R380E6 | Infineon Technologies |
Description: MOSFET N-CH 650V 10.6A TO252-3Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: PG-TO252-3-313 Vgs(th) (Max) @ Id: 3.5V @ 320µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk |
на замовлення 5090 шт: термін постачання 21-31 дні (днів) |
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IPB65R380C6ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 10.6A D2PAKRds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 3.5V @ 320µA Power Dissipation (Max): 83W (Tc) |
на замовлення 13540 шт: термін постачання 21-31 дні (днів) |
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| IPB65R380C6 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETInput Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 3.5V @ 320µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Bulk |
на замовлення 3263 шт: термін постачання 21-31 дні (днів) |
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IPD65R380E6ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 10.6A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 320µA Supplier Device Package: PG-TO252-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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IPD65R380E6ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 10.6A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 320µA Supplier Device Package: PG-TO252-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V |
на замовлення 1942 шт: термін постачання 21-31 дні (днів) |
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| IPP65R380C6 | Infineon Technologies |
Description: POWER FIELD-EFFECT TRANSISTOR, 1Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 3.5V @ 320µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IPP65R380E6 | Infineon Technologies |
Description: IPP65R380E6 - 650V-700V COOLMOSInput Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 3.5V @ 320µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BF771E6765N | Infineon Technologies |
Description: RF TRANS NPN 12V 8GHZ PG-SOT-23Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: PG-SOT23-3-4 Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Frequency - Transition: 8GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Voltage - Collector Emitter Breakdown (Max): 12V Current - Collector (Ic) (Max): 80mA Power - Max: 580mW Gain: 15dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
на замовлення 111000 шт: термін постачання 21-31 дні (днів) |
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IPB060N15N5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 150V 136A TO263-7Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 136A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 68A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 180µA Supplier Device Package: PG-TO263-7-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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IPB060N15N5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 150V 136A TO263-7Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 136A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 68A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 180µA Supplier Device Package: PG-TO263-7-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V |
на замовлення 2267 шт: термін постачання 21-31 дні (днів) |
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IPBE65R075CFD7AATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 32A TO263-7Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Qualification: AEC-Q101 Grade: Automotive Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO263-7-3-10 Vgs(th) (Max) @ Id: 4.5V @ 820µA Power Dissipation (Max): 171W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPBE65R230CFD7AATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 11A TO263-7Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO263-7-3-10 Vgs(th) (Max) @ Id: 4.5V @ 260µA Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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IPBE65R230CFD7AATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 11A TO263-7Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO263-7-3-10 Vgs(th) (Max) @ Id: 4.5V @ 260µA Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Qualification: AEC-Q101 Grade: Automotive |
на замовлення 602 шт: термін постачання 21-31 дні (днів) |
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PTMA080302MV1AUMA1 | Infineon Technologies |
Description: IC AMP GSM 700MHZ-1GHZ DSO20-63Frequency: 700MHz ~ 1GHz Mounting Type: Surface Mount Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad Packaging: Bulk Part Status: Obsolete Supplier Device Package: PG-DSO-20-63 Gain: 30dB RF Type: GSM, EDGE |
на замовлення 166 шт: термін постачання 21-31 дні (днів) |
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CY7C1399BL-12ZXCT | Infineon Technologies |
Description: IC SRAM 256KBIT PAR 28TSOP IPackaging: Bulk Package / Case: 28-TSSOP (0.465", 11.80mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 28-TSOP I Write Cycle Time - Word, Page: 12ns Memory Interface: Parallel Access Time: 12 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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CY25811ZXCT | Infineon Technologies |
Description: IC CLOCK GEN 3.3V SS 8-TSSOP |
на замовлення 6860 шт: термін постачання 21-31 дні (днів) |
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BSC0502NSIATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 26A/100A TDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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BSC0502NSIATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 26A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V |
на замовлення 23737 шт: термін постачання 21-31 дні (днів) |
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KP229E2701XTMA1 | Infineon Technologies |
Description: SENSOR 43.51PSIA 4.65V DSOF8Features: Amplified Output, Temperature Compensated Packaging: Cut Tape (CT) Package / Case: 8-SMD Module Output Type: Analog Voltage Mounting Type: Surface Mount Output: 0.4 V ~ 4.65 V Operating Pressure: 1.45PSI ~ 43.51PSI (10kPa ~ 300kPa) Pressure Type: Absolute Accuracy: ±0.544PSI (±3.75kPa) Operating Temperature: -40°C ~ 140°C Termination Style: SMD (SMT) Tab Voltage - Supply: 4.5V ~ 5.5V Applications: Board Mount Supplier Device Package: PG-DSOF-8-16 Port Style: No Port Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 1303 шт: термін постачання 21-31 дні (днів) |
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IRLR8721TRPBF-1 | Infineon Technologies |
Description: MOSFET N-CH 30V 65A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XC167CI32F40FBBAKXUMA1 | Infineon Technologies |
Description: IC MCU 16BIT 256KB FLASH 144TQFP |
товару немає в наявності |
Мінімальне замовлення: 13 шт В кошику од. на суму грн. | ||||||||||||||
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TLI4906L | Infineon Technologies |
Description: TLI4906 - HALL SWITCHPart Status: Active Test Condition: 25°C Supplier Device Package: PG-SSO-3-2 Current - Supply (Max): 6mA Current - Output (Max): 20mA Sensing Range: 18mT Trip, 5mT Release Technology: Hall Effect Voltage - Supply: 2.7V ~ 18V Operating Temperature: -40°C ~ 125°C (TA) Function: Unipolar Switch Mounting Type: Through Hole Polarization: South Pole Output Type: Open Drain Package / Case: 3-SSIP, SSO-3-02 Features: Temperature Compensated Packaging: Bulk |
на замовлення 19999 шт: термін постачання 21-31 дні (днів) |
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SAK-C868-1SG BA | Infineon Technologies |
Description: IC MCU 8BIT 8KB RAM DSO28DigiKey Programmable: Not Verified Number of I/O: 18 Part Status: Obsolete Supplier Device Package: P-DSO-28 Peripherals: Brown-out Detect/Reset, PWM, WDT Connectivity: UART/USART Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Core Size: 8-Bit Data Converters: A/D 5x8b Core Processor: C800 Program Memory Type: RAM Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 512 x 8 Program Memory Size: 8KB (8K x 8) Speed: 40MHz Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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TLE9255WSKXUMA2 | Infineon Technologies |
Description: IC TRANSCEIVER FULL DSO-14Grade: Automotive Part Status: Active Duplex: Full Supplier Device Package: PG-DSO-14 Protocol: CANbus Data Rate: 1Mbps Voltage - Supply: 4.75V ~ 5.25V Operating Temperature: -40°C ~ 150°C Type: Transceiver Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TLE9255WSKXUMA2 | Infineon Technologies |
Description: IC TRANSCEIVER FULL DSO-14Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4.75V ~ 5.25V Data Rate: 1Mbps Protocol: CANbus Supplier Device Package: PG-DSO-14 Duplex: Full Grade: Automotive Part Status: Active |
на замовлення 7063 шт: термін постачання 21-31 дні (днів) |
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BAS70-04E6327 | Infineon Technologies |
Description: BAS70 - HIGH SPEED SWITCHING, CLPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100 ps Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 70mA (DC) Supplier Device Package: PG-SOT23 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRL520NSTRLPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 10A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V Power Dissipation (Max): 3.8W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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AIKW50N65RF5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 80A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/156ns Switching Energy: 310µJ (on), 120µJ (off) Test Condition: 400V, 25A, 12Ohm, 15V Gate Charge: 109 nC Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 250 W Qualification: AEC-Q101 |
на замовлення 190 шт: термін постачання 21-31 дні (днів) |
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BTS500201TADATMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 3mOhm Input Type: Non-Inverting Voltage - Load: 8V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 29A Ratio - Input:Output: 1:1 Supplier Device Package: P/PG-TO-263-7-10 Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IFX1040SJXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER FULL 1/1 DSO-8Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Data Rate: 1MBd Protocol: CANbus Supplier Device Package: PG-DSO-8 Receiver Hysteresis: 200 mV Duplex: Full |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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TLE8457ASJXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER 1/1 DSO-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY7C4205-10AXC | Infineon Technologies |
Description: IC FIFO SYNC 256X18 8NS 64TQFPPackaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Function: Synchronous Memory Size: 4.5K (256 x 18) Operating Temperature: 0°C ~ 70°C Data Rate: 100MHz Access Time: 8ns Current - Supply (Max): 45mA Supplier Device Package: 64-TQFP (14x14) Bus Directional: Uni-Directional Expansion Type: Depth, Width Programmable Flags Support: Yes Retransmit Capability: Yes FWFT Support: No Part Status: Obsolete Voltage - Supply: 4.5 V ~ 5.5 V DigiKey Programmable: Not Verified |
на замовлення 1057 шт: термін постачання 21-31 дні (днів) |
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CY7C4205-10AC | Infineon Technologies |
Description: IC FIFO SYNC 256X18 8NS 64TQFP Packaging: Bag Package / Case: 64-LQFP Mounting Type: Surface Mount Function: Synchronous Memory Size: 4.5K (256 x 18) Operating Temperature: 0°C ~ 70°C Data Rate: 100MHz Access Time: 8ns Current - Supply (Max): 45mA Supplier Device Package: 64-TQFP (14x14) Bus Directional: Uni-Directional Expansion Type: Depth, Width Programmable Flags Support: Yes Retransmit Capability: Yes FWFT Support: No Part Status: Obsolete Voltage - Supply: 4.5 V ~ 5.5 V DigiKey Programmable: Not Verified |
на замовлення 92 шт: термін постачання 21-31 дні (днів) |
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CY7C4291V-15JXC | Infineon Technologies |
Description: IC FIFO SYNC 128KX9 10NS 32PLCCDigiKey Programmable: Not Verified Voltage - Supply: 3 V ~ 3.6 V FWFT Support: No Retransmit Capability: No Programmable Flags Support: Yes Expansion Type: Depth, Width Bus Directional: Uni-Directional Supplier Device Package: 32-PLCC (11.43x13.97) Current - Supply (Max): 25mA Access Time: 10ns Data Rate: 66.7MHz Operating Temperature: 0°C ~ 70°C Memory Size: 1.125M (128K x 9) Function: Synchronous Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Packaging: Bulk |
на замовлення 23 шт: термін постачання 21-31 дні (днів) |
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PVDZ172NS-TPBF | Infineon Technologies |
Description: SSR RELAY SPST-NO 1.5A 0-60VRelay Type: Photo-Coupled Relay (Photorelay) Approval Agency: UL Operating Temperature: -40°C ~ 85°C On-State Resistance (Max): 250 MOhms Voltage - Load: 0 V ~ 60 V Part Status: Active Supplier Device Package: 8-SMD Load Current: 1.5 A Termination Style: Gull Wing Circuit: SPST-NO (1 Form A) Voltage - Input: 1.2VDC Mounting Type: Surface Mount Output Type: DC Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads Packaging: Bulk |
на замовлення 778 шт: термін постачання 21-31 дні (днів) |
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IDD06SG60CXTMA2 | Infineon Technologies |
Description: DIODE SIL CARB 600V 6A PGTO2523Current - Reverse Leakage @ Vr: 50 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-TO252-3 Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 130pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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IDD06SG60CXTMA2 | Infineon Technologies |
Description: DIODE SIL CARB 600V 6A PGTO2523Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-TO252-3 Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 130pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 50 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A |
на замовлення 9208 шт: термін постачання 21-31 дні (днів) |
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TLS4125D0EPVXUMA1 | Infineon Technologies |
Description: IC REG BUCK ADJ 2.5A TSDSO-14-5Packaging: Tape & Reel (TR) Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width) Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 2.5A Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Frequency - Switching: 2.8MHz Voltage - Input (Max): 35V Topology: Buck Supplier Device Package: PG-TSDSO-14-5 Synchronous Rectifier: Yes Voltage - Output (Max): 10V Voltage - Input (Min): 3.7V Voltage - Output (Min/Fixed): 3V Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IAUC60N04S6N044ATMA1 | Infineon Technologies |
Description: IAUC60N04S6N044ATMA1Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3V @ 14µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUC60N04S6N044ATMA1 | Infineon Technologies |
Description: IAUC60N04S6N044ATMA1Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3V @ 14µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| 2EDF7275KXUMA2 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 13TFLGA
Packaging: Tape & Reel (TR)
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 13TFLGA
Packaging: Tape & Reel (TR)
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| 2EDF7275KXUMA2 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 13TFLGA
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 4A, 8A
Logic Voltage - VIL, VIH: -, 1.65V
Gate Type: MOSFET (N-Channel, P-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Supplier Device Package: PG-TFLGA-13-1
Input Type: Non-Inverting
Voltage - Supply: 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 13-TFLGA
Packaging: Cut Tape (CT)
Description: IC GATE DRVR HALF-BRIDGE 13TFLGA
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 4A, 8A
Logic Voltage - VIL, VIH: -, 1.65V
Gate Type: MOSFET (N-Channel, P-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Supplier Device Package: PG-TFLGA-13-1
Input Type: Non-Inverting
Voltage - Supply: 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 13-TFLGA
Packaging: Cut Tape (CT)
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 169.30 грн |
| 10+ | 121.37 грн |
| 25+ | 110.77 грн |
| 100+ | 93.10 грн |
| BSC146N10LS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 44A TDSON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Description: MOSFET N-CH 100V 44A TDSON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 41.61 грн |
| IRFSL3107PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 195A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 140A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9370 pF @ 50 V
Description: MOSFET N-CH 75V 195A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 140A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9370 pF @ 50 V
на замовлення 4390 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 109+ | 194.31 грн |
| ISP75DP06LMXTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 1.1A SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 2V @ 77µA
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 60V 1.1A SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 2V @ 77µA
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
на замовлення 1921 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.84 грн |
| 12+ | 25.59 грн |
| 100+ | 16.40 грн |
| 500+ | 11.64 грн |
| IFX9202EDXUMA1 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER DSO36-72
Qualification: AEC-Q100
Grade: Automotive
Load Type: Inductive
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Supplier Device Package: PG-DSO-36-72
Voltage - Load: 5V ~ 36V
Applications: DC Motors, General Purpose
Rds On (Typ): 100mOhm LS + HS
Voltage - Supply: 2.9V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 125°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC HALF BRIDGE DRIVER DSO36-72
Qualification: AEC-Q100
Grade: Automotive
Load Type: Inductive
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Supplier Device Package: PG-DSO-36-72
Voltage - Load: 5V ~ 36V
Applications: DC Motors, General Purpose
Rds On (Typ): 100mOhm LS + HS
Voltage - Supply: 2.9V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 125°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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| IFX9202EDXUMA1 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER DSO36-72
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.9V ~ 5.5V
Rds On (Typ): 100mOhm LS + HS
Applications: DC Motors, General Purpose
Voltage - Load: 5V ~ 36V
Supplier Device Package: PG-DSO-36-72
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Grade: Automotive
Qualification: AEC-Q100
Description: IC HALF BRIDGE DRIVER DSO36-72
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.9V ~ 5.5V
Rds On (Typ): 100mOhm LS + HS
Applications: DC Motors, General Purpose
Voltage - Load: 5V ~ 36V
Supplier Device Package: PG-DSO-36-72
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Grade: Automotive
Qualification: AEC-Q100
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| FS450R12OE4BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 660A 2250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 660 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Description: IGBT MOD 1200V 660A 2250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 660 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 28337.25 грн |
| FS300R12OE4BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 460A 1650W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 460 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1650 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Description: IGBT MOD 1200V 460A 1650W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 460 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1650 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
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| BAT240AE6327 |
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Виробник: Infineon Technologies
Description: DIODE ARRAY SCHOTTKY 240V SOT-23
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 400 mA
Voltage - DC Reverse (Vr) (Max): 240 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Mounting Type: Surface Mount
Description: DIODE ARRAY SCHOTTKY 240V SOT-23
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 400 mA
Voltage - DC Reverse (Vr) (Max): 240 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Mounting Type: Surface Mount
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| PEF 21624 E V1.2-G |
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Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE LBGA-324
Packaging: Tray
Package / Case: 324-LBGA
Mounting Type: Surface Mount
Function: Symmetrical DSL Front End (SDFE)
Interface: ISDN, SHDSL
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: P-LBGA-324
Number of Circuits: 1
Description: IC TELECOM INTERFACE LBGA-324
Packaging: Tray
Package / Case: 324-LBGA
Mounting Type: Surface Mount
Function: Symmetrical DSL Front End (SDFE)
Interface: ISDN, SHDSL
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: P-LBGA-324
Number of Circuits: 1
товару немає в наявності
Мінімальне замовлення: 84 шт
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| PEF 22623 E V2.1 |
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Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE LBGA-256
Packaging: Tray
Package / Case: 256-LBGA
Mounting Type: Surface Mount
Function: One Chip Rate Adaptive Transceiver
Interface: SHDSL
Supplier Device Package: PG-LBGA-256-1
Number of Circuits: 1
Description: IC TELECOM INTERFACE LBGA-256
Packaging: Tray
Package / Case: 256-LBGA
Mounting Type: Surface Mount
Function: One Chip Rate Adaptive Transceiver
Interface: SHDSL
Supplier Device Package: PG-LBGA-256-1
Number of Circuits: 1
товару немає в наявності
Мінімальне замовлення: 45 шт
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| PEF 2426 H V1.1 D |
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Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE MQFP-44
Packaging: Tray
Package / Case: 44-QFP
Mounting Type: Surface Mount
Function: High Voltage Power Controller
Interface: ISDN, SHDSL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 6V
Current - Supply: 700µA
Supplier Device Package: P-MQFP-44
Part Status: Obsolete
Number of Circuits: 4
Description: IC TELECOM INTERFACE MQFP-44
Packaging: Tray
Package / Case: 44-QFP
Mounting Type: Surface Mount
Function: High Voltage Power Controller
Interface: ISDN, SHDSL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 6V
Current - Supply: 700µA
Supplier Device Package: P-MQFP-44
Part Status: Obsolete
Number of Circuits: 4
товару немає в наявності
Мінімальне замовлення: 96 шт
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| PEF 2426 H V1.1 GD |
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Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE MQFP-44
Packaging: Tape & Reel (TR)
Package / Case: 44-QFP
Mounting Type: Surface Mount
Function: High Voltage Power Controller
Interface: ISDN, SHDSL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 6V
Current - Supply: 700µA
Supplier Device Package: P-MQFP-44
Part Status: Obsolete
Number of Circuits: 4
Description: IC TELECOM INTERFACE MQFP-44
Packaging: Tape & Reel (TR)
Package / Case: 44-QFP
Mounting Type: Surface Mount
Function: High Voltage Power Controller
Interface: ISDN, SHDSL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 6V
Current - Supply: 700µA
Supplier Device Package: P-MQFP-44
Part Status: Obsolete
Number of Circuits: 4
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| PEF 24622 E V2.1 |
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Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE 388BGA
Number of Circuits: 4
Supplier Device Package: PG-BGA-388-2
Interface: HDLC, SHDSL, TDM
Function: One Chip Rate Adaptive Transceiver
Mounting Type: Surface Mount
Package / Case: 388-BBGA
Packaging: Tray
Description: IC TELECOM INTERFACE 388BGA
Number of Circuits: 4
Supplier Device Package: PG-BGA-388-2
Interface: HDLC, SHDSL, TDM
Function: One Chip Rate Adaptive Transceiver
Mounting Type: Surface Mount
Package / Case: 388-BBGA
Packaging: Tray
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Мінімальне замовлення: 24 шт
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| PEF 24624 E V1.2 |
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Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE LBGA-324
Number of Circuits: 4
Supplier Device Package: P-LBGA-324
Operating Temperature: -40°C ~ 85°C
Interface: ISDN, SHDSL
Function: Symmetrical DSL Front End (SDFE)
Mounting Type: Surface Mount
Package / Case: 324-LBGA
Packaging: Tray
Description: IC TELECOM INTERFACE LBGA-324
Number of Circuits: 4
Supplier Device Package: P-LBGA-324
Operating Temperature: -40°C ~ 85°C
Interface: ISDN, SHDSL
Function: Symmetrical DSL Front End (SDFE)
Mounting Type: Surface Mount
Package / Case: 324-LBGA
Packaging: Tray
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| PEF 24624 E V1.2-G |
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Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE LBGA-324
Number of Circuits: 4
Supplier Device Package: P-LBGA-324
Interface: ISDN, SHDSL
Function: Symmetrical DSL Front End (SDFE)
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 324-LBGA
Packaging: Tray
Description: IC TELECOM INTERFACE LBGA-324
Number of Circuits: 4
Supplier Device Package: P-LBGA-324
Interface: ISDN, SHDSL
Function: Symmetrical DSL Front End (SDFE)
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 324-LBGA
Packaging: Tray
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| PEF 24624 E V2.1-G |
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Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE LBGA-324
Number of Circuits: 4
Supplier Device Package: P-LBGA-324
Operating Temperature: -40°C ~ 85°C
Interface: ISDN, SHDSL
Function: Symmetrical DSL Front End (SDFE)
Mounting Type: Surface Mount
Package / Case: 324-LBGA
Packaging: Tray
Description: IC TELECOM INTERFACE LBGA-324
Number of Circuits: 4
Supplier Device Package: P-LBGA-324
Operating Temperature: -40°C ~ 85°C
Interface: ISDN, SHDSL
Function: Symmetrical DSL Front End (SDFE)
Mounting Type: Surface Mount
Package / Case: 324-LBGA
Packaging: Tray
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| PEF 24625 E V1.2 |
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Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE 484BGA
Power (Watts): 500 mW
Number of Circuits: 1
Supplier Device Package: 484-BGA (27x27)
Operating Temperature: -40°C ~ 85°C
Interface: DSL, SHDSL, TDM
Function: Symmetrical DSL Controller (SDC-16i)
Mounting Type: Surface Mount
Package / Case: 484-BBGA
Packaging: Tray
Description: IC TELECOM INTERFACE 484BGA
Power (Watts): 500 mW
Number of Circuits: 1
Supplier Device Package: 484-BGA (27x27)
Operating Temperature: -40°C ~ 85°C
Interface: DSL, SHDSL, TDM
Function: Symmetrical DSL Controller (SDC-16i)
Mounting Type: Surface Mount
Package / Case: 484-BBGA
Packaging: Tray
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| PEF 24624 E V2.2-G |
![]() |
Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE LBGA-324
Power (Watts): 500 mW
Number of Circuits: 4
Supplier Device Package: P-LBGA-324
Operating Temperature: -40°C ~ 85°C
Interface: DSL, SHDSL, TDM
Function: Symmetrical DSL Front End (SDFE)
Mounting Type: Surface Mount
Package / Case: 324-LBGA
Packaging: Tray
Description: IC TELECOM INTERFACE LBGA-324
Power (Watts): 500 mW
Number of Circuits: 4
Supplier Device Package: P-LBGA-324
Operating Temperature: -40°C ~ 85°C
Interface: DSL, SHDSL, TDM
Function: Symmetrical DSL Front End (SDFE)
Mounting Type: Surface Mount
Package / Case: 324-LBGA
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 84 шт
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| IPD65R380E6 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 10.6A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Description: MOSFET N-CH 650V 10.6A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
на замовлення 5090 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 314+ | 71.22 грн |
| IPB65R380C6ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 10.6A D2PAK
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Description: MOSFET N-CH 650V 10.6A D2PAK
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
на замовлення 13540 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 222+ | 92.53 грн |
| IPB65R380C6 |
![]() |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
на замовлення 3263 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 325+ | 72.11 грн |
| IPD65R380E6ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 10.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Description: MOSFET N-CH 650V 10.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPD65R380E6ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 10.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Description: MOSFET N-CH 650V 10.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
на замовлення 1942 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 182.63 грн |
| 10+ | 112.76 грн |
| 50+ | 85.59 грн |
| 100+ | 72.12 грн |
| 500+ | 57.68 грн |
| IPP65R380C6 |
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Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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В кошику
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| IPP65R380E6 |
![]() |
Виробник: Infineon Technologies
Description: IPP65R380E6 - 650V-700V COOLMOS
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Description: IPP65R380E6 - 650V-700V COOLMOS
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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В кошику
од. на суму грн.
| BF771E6765N |
![]() |
Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ PG-SOT-23
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PG-SOT23-3-4
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 8GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 80mA
Power - Max: 580mW
Gain: 15dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: RF TRANS NPN 12V 8GHZ PG-SOT-23
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PG-SOT23-3-4
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 8GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 80mA
Power - Max: 580mW
Gain: 15dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
на замовлення 111000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4157+ | 5.25 грн |
| IPB060N15N5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 136A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 180µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V
Description: MOSFET N-CH 150V 136A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 180µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 192.50 грн |
| IPB060N15N5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 136A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 180µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V
Description: MOSFET N-CH 150V 136A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 180µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V
на замовлення 2267 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 503.21 грн |
| 10+ | 325.99 грн |
| 50+ | 257.89 грн |
| 100+ | 221.48 грн |
| 500+ | 196.25 грн |
| IPBE65R075CFD7AATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 32A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Qualification: AEC-Q101
Grade: Automotive
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-7-3-10
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 650V 32A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Qualification: AEC-Q101
Grade: Automotive
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-7-3-10
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Cut Tape (CT)
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В кошику
од. на суму грн.
| IPBE65R230CFD7AATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-3-10
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 650V 11A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-3-10
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IPBE65R230CFD7AATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO263-7
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-3-10
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 650V 11A TO263-7
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-3-10
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
на замовлення 602 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 304.12 грн |
| 10+ | 193.00 грн |
| 50+ | 149.82 грн |
| 100+ | 127.59 грн |
| 500+ | 108.05 грн |
| PTMA080302MV1AUMA1 |
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Виробник: Infineon Technologies
Description: IC AMP GSM 700MHZ-1GHZ DSO20-63
Frequency: 700MHz ~ 1GHz
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Packaging: Bulk
Part Status: Obsolete
Supplier Device Package: PG-DSO-20-63
Gain: 30dB
RF Type: GSM, EDGE
Description: IC AMP GSM 700MHZ-1GHZ DSO20-63
Frequency: 700MHz ~ 1GHz
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Packaging: Bulk
Part Status: Obsolete
Supplier Device Package: PG-DSO-20-63
Gain: 30dB
RF Type: GSM, EDGE
на замовлення 166 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 2283.25 грн |
| CY7C1399BL-12ZXCT |
![]() |
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bulk
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bulk
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 423+ | 51.20 грн |
| CY25811ZXCT |
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Виробник: Infineon Technologies
Description: IC CLOCK GEN 3.3V SS 8-TSSOP
Description: IC CLOCK GEN 3.3V SS 8-TSSOP
на замовлення 6860 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 219+ | 98.16 грн |
| BSC0502NSIATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 26A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Description: MOSFET N-CH 30V 26A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 36.37 грн |
| BSC0502NSIATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 26A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Description: MOSFET N-CH 30V 26A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
на замовлення 23737 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 137.17 грн |
| 10+ | 84.16 грн |
| 100+ | 56.65 грн |
| 500+ | 42.12 грн |
| 1000+ | 38.57 грн |
| 2000+ | 35.58 грн |
| KP229E2701XTMA1 |
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Виробник: Infineon Technologies
Description: SENSOR 43.51PSIA 4.65V DSOF8
Features: Amplified Output, Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.4 V ~ 4.65 V
Operating Pressure: 1.45PSI ~ 43.51PSI (10kPa ~ 300kPa)
Pressure Type: Absolute
Accuracy: ±0.544PSI (±3.75kPa)
Operating Temperature: -40°C ~ 140°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: SENSOR 43.51PSIA 4.65V DSOF8
Features: Amplified Output, Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.4 V ~ 4.65 V
Operating Pressure: 1.45PSI ~ 43.51PSI (10kPa ~ 300kPa)
Pressure Type: Absolute
Accuracy: ±0.544PSI (±3.75kPa)
Operating Temperature: -40°C ~ 140°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 1303 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 276.69 грн |
| 5+ | 238.81 грн |
| 10+ | 228.40 грн |
| 25+ | 202.70 грн |
| 50+ | 194.74 грн |
| 100+ | 187.43 грн |
| 500+ | 169.91 грн |
| IRLR8721TRPBF-1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 65A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V
Description: MOSFET N-CH 30V 65A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V
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| XC167CI32F40FBBAKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 144TQFP
Description: IC MCU 16BIT 256KB FLASH 144TQFP
товару немає в наявності
Мінімальне замовлення: 13 шт
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| TLI4906L |
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Виробник: Infineon Technologies
Description: TLI4906 - HALL SWITCH
Part Status: Active
Test Condition: 25°C
Supplier Device Package: PG-SSO-3-2
Current - Supply (Max): 6mA
Current - Output (Max): 20mA
Sensing Range: 18mT Trip, 5mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Function: Unipolar Switch
Mounting Type: Through Hole
Polarization: South Pole
Output Type: Open Drain
Package / Case: 3-SSIP, SSO-3-02
Features: Temperature Compensated
Packaging: Bulk
Description: TLI4906 - HALL SWITCH
Part Status: Active
Test Condition: 25°C
Supplier Device Package: PG-SSO-3-2
Current - Supply (Max): 6mA
Current - Output (Max): 20mA
Sensing Range: 18mT Trip, 5mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Function: Unipolar Switch
Mounting Type: Through Hole
Polarization: South Pole
Output Type: Open Drain
Package / Case: 3-SSIP, SSO-3-02
Features: Temperature Compensated
Packaging: Bulk
на замовлення 19999 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 739+ | 29.30 грн |
| SAK-C868-1SG BA |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB RAM DSO28
DigiKey Programmable: Not Verified
Number of I/O: 18
Part Status: Obsolete
Supplier Device Package: P-DSO-28
Peripherals: Brown-out Detect/Reset, PWM, WDT
Connectivity: UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Core Size: 8-Bit
Data Converters: A/D 5x8b
Core Processor: C800
Program Memory Type: RAM
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 512 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Description: IC MCU 8BIT 8KB RAM DSO28
DigiKey Programmable: Not Verified
Number of I/O: 18
Part Status: Obsolete
Supplier Device Package: P-DSO-28
Peripherals: Brown-out Detect/Reset, PWM, WDT
Connectivity: UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Core Size: 8-Bit
Data Converters: A/D 5x8b
Core Processor: C800
Program Memory Type: RAM
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 512 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| TLE9255WSKXUMA2 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER FULL DSO-14
Grade: Automotive
Part Status: Active
Duplex: Full
Supplier Device Package: PG-DSO-14
Protocol: CANbus
Data Rate: 1Mbps
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC TRANSCEIVER FULL DSO-14
Grade: Automotive
Part Status: Active
Duplex: Full
Supplier Device Package: PG-DSO-14
Protocol: CANbus
Data Rate: 1Mbps
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 96.84 грн |
| 5000+ | 89.80 грн |
| TLE9255WSKXUMA2 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER FULL DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-14
Duplex: Full
Grade: Automotive
Part Status: Active
Description: IC TRANSCEIVER FULL DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-14
Duplex: Full
Grade: Automotive
Part Status: Active
на замовлення 7063 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 211.63 грн |
| 10+ | 183.04 грн |
| 25+ | 172.69 грн |
| 100+ | 138.08 грн |
| 250+ | 129.65 грн |
| 500+ | 113.45 грн |
| 1000+ | 92.46 грн |
| BAS70-04E6327 |
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Виробник: Infineon Technologies
Description: BAS70 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: BAS70 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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| IRL520NSTRLPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Description: MOSFET N-CH 100V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 800 шт
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| AIKW50N65RF5XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/156ns
Switching Energy: 310µJ (on), 120µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 109 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
Qualification: AEC-Q101
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/156ns
Switching Energy: 310µJ (on), 120µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 109 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
Qualification: AEC-Q101
на замовлення 190 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 478.13 грн |
| 10+ | 354.67 грн |
| 30+ | 323.83 грн |
| 120+ | 278.09 грн |
| BTS500201TADATMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 29A
Ratio - Input:Output: 1:1
Supplier Device Package: P/PG-TO-263-7-10
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 29A
Ratio - Input:Output: 1:1
Supplier Device Package: P/PG-TO-263-7-10
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
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| IFX1040SJXUMA1 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 DSO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 200 mV
Duplex: Full
Description: IC TRANSCEIVER FULL 1/1 DSO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 200 mV
Duplex: Full
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 452+ | 47.77 грн |
| TLE8457ASJXUMA1 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER 1/1 DSO-8
Description: IC TRANSCEIVER 1/1 DSO-8
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| CY7C4205-10AXC |
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Виробник: Infineon Technologies
Description: IC FIFO SYNC 256X18 8NS 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (256 x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 100MHz
Access Time: 8ns
Current - Supply (Max): 45mA
Supplier Device Package: 64-TQFP (14x14)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Part Status: Obsolete
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
Description: IC FIFO SYNC 256X18 8NS 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (256 x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 100MHz
Access Time: 8ns
Current - Supply (Max): 45mA
Supplier Device Package: 64-TQFP (14x14)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Part Status: Obsolete
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
на замовлення 1057 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 1022.31 грн |
| CY7C4205-10AC |
Виробник: Infineon Technologies
Description: IC FIFO SYNC 256X18 8NS 64TQFP
Packaging: Bag
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (256 x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 100MHz
Access Time: 8ns
Current - Supply (Max): 45mA
Supplier Device Package: 64-TQFP (14x14)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Part Status: Obsolete
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
Description: IC FIFO SYNC 256X18 8NS 64TQFP
Packaging: Bag
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (256 x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 100MHz
Access Time: 8ns
Current - Supply (Max): 45mA
Supplier Device Package: 64-TQFP (14x14)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Part Status: Obsolete
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
на замовлення 92 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 38+ | 585.63 грн |
| CY7C4291V-15JXC |
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Виробник: Infineon Technologies
Description: IC FIFO SYNC 128KX9 10NS 32PLCC
DigiKey Programmable: Not Verified
Voltage - Supply: 3 V ~ 3.6 V
FWFT Support: No
Retransmit Capability: No
Programmable Flags Support: Yes
Expansion Type: Depth, Width
Bus Directional: Uni-Directional
Supplier Device Package: 32-PLCC (11.43x13.97)
Current - Supply (Max): 25mA
Access Time: 10ns
Data Rate: 66.7MHz
Operating Temperature: 0°C ~ 70°C
Memory Size: 1.125M (128K x 9)
Function: Synchronous
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Packaging: Bulk
Description: IC FIFO SYNC 128KX9 10NS 32PLCC
DigiKey Programmable: Not Verified
Voltage - Supply: 3 V ~ 3.6 V
FWFT Support: No
Retransmit Capability: No
Programmable Flags Support: Yes
Expansion Type: Depth, Width
Bus Directional: Uni-Directional
Supplier Device Package: 32-PLCC (11.43x13.97)
Current - Supply (Max): 25mA
Access Time: 10ns
Data Rate: 66.7MHz
Operating Temperature: 0°C ~ 70°C
Memory Size: 1.125M (128K x 9)
Function: Synchronous
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Packaging: Bulk
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 2241.71 грн |
| PVDZ172NS-TPBF |
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Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 1.5A 0-60V
Relay Type: Photo-Coupled Relay (Photorelay)
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 250 MOhms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: 8-SMD
Load Current: 1.5 A
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: DC
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Packaging: Bulk
Description: SSR RELAY SPST-NO 1.5A 0-60V
Relay Type: Photo-Coupled Relay (Photorelay)
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 250 MOhms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: 8-SMD
Load Current: 1.5 A
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: DC
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Packaging: Bulk
на замовлення 778 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 52+ | 389.95 грн |
| IDD06SG60CXTMA2 |
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Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 6A PGTO2523
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO252-3
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: DIODE SIL CARB 600V 6A PGTO2523
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO252-3
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 97.73 грн |
| IDD06SG60CXTMA2 |
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Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 6A PGTO2523
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO252-3
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A
Description: DIODE SIL CARB 600V 6A PGTO2523
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO252-3
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A
на замовлення 9208 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 291.58 грн |
| 10+ | 184.02 грн |
| 100+ | 129.13 грн |
| 500+ | 99.20 грн |
| 1000+ | 92.14 грн |
| TLS4125D0EPVXUMA1 |
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Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 2.5A TSDSO-14-5
Packaging: Tape & Reel (TR)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.8MHz
Voltage - Input (Max): 35V
Topology: Buck
Supplier Device Package: PG-TSDSO-14-5
Synchronous Rectifier: Yes
Voltage - Output (Max): 10V
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 3V
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG BUCK ADJ 2.5A TSDSO-14-5
Packaging: Tape & Reel (TR)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.8MHz
Voltage - Input (Max): 35V
Topology: Buck
Supplier Device Package: PG-TSDSO-14-5
Synchronous Rectifier: Yes
Voltage - Output (Max): 10V
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 3V
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| IAUC60N04S6N044ATMA1 |
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Виробник: Infineon Technologies
Description: IAUC60N04S6N044ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 14µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Qualification: AEC-Q101
Description: IAUC60N04S6N044ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 14µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 23.00 грн |
| IAUC60N04S6N044ATMA1 |
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Виробник: Infineon Technologies
Description: IAUC60N04S6N044ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 14µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Qualification: AEC-Q101
Description: IAUC60N04S6N044ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 14µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 94.84 грн |
| 10+ | 57.51 грн |
| 100+ | 37.97 грн |
| 500+ | 27.76 грн |
| 1000+ | 25.23 грн |
| 2000+ | 23.09 грн |



































