Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (119471) > Сторінка 1992 з 1992
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| S25FL512SAGMFI013 | INFINEON TECHNOLOGIES |
 Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: SOIC16 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IPA70R600P7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 8.5A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 8.5A Case: TO220FP On-state resistance: 0.49Ω Mounting: THT Kind of channel: enhancement Gate charge: 10.5nC Power dissipation: 25W |
на замовлення 89 шт: термін постачання 14-30 дні (днів) |
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IPW60R017C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 109A; 446W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 109A Power dissipation: 446W Case: TO247 On-state resistance: 17mΩ Mounting: THT Gate charge: 240nC Kind of channel: enhancement |
на замовлення 28 шт: термін постачання 14-30 дні (днів) |
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| FS75R12W2T4B11BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 75A Case: AG-EASY2B-2 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 375W Technology: EasyPACK™ 2B Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PVT412PBF | INFINEON TECHNOLOGIES |
 Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 27Ω Type of relay: solid state Contacts configuration: SPST-NO Control voltage: 1.2V DC Control current max.: 25mA Max. operating current: 140mA On-state resistance: 27Ω Mounting: THT Case: DIP6 Body dimensions: 8.63x6.47x3.42mm Leads: for PCB Insulation voltage: 4kV Turn-on time: 2ms Turn-off time: 0.5ms Kind of output: MOSFET Operating temperature: -40...85°C |
на замовлення 1800 шт: термін постачання 14-30 дні (днів) |
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IPP120N20NFDAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 84A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: OptiMOS™ FD |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
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BAS4007E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT143; SMD; 40V; 0.12A; 250mW Type of diode: Schottky switching Case: SOT143 Mounting: SMD Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: double independent Max. forward voltage: 1V Max. forward impulse current: 0.2A Power dissipation: 0.25W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSZ018NE2LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ Case: PG-TSDSON-8 On-state resistance: 1.8mΩ Gate-source voltage: ±20V Drain-source voltage: 25V Drain current: 40A Power dissipation: 69W Polarisation: unipolar |
на замовлення 4970 шт: термін постачання 14-30 дні (днів) |
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| BCR166E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 100mA; 200mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 70 Mounting: SMD |
на замовлення 24000 шт: термін постачання 14-30 дні (днів) |
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BGT24MTR12E6327XUMA1 | INFINEON TECHNOLOGIES |
Category: Integrated circuits - others Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C Supply voltage: 3.135...3.465V DC Interface: SPI Frequency: 24...24.25GHz Case: VQFN32 Operating temperature: -40...105°C DC supply current: 210mA Number of transmitters: 1 Number of receivers: 2 Kind of integrated circuit: MMIC; RF transceiver Noise Figure: 12dB Open-loop gain: 26dB Kind of package: reel; tape Type of integrated circuit: interface Mounting: SMD |
на замовлення 475 шт: термін постачання 14-30 дні (днів) |
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BGT24LTR11N16E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Integrated circuits - others Description: IC: interface; MMIC,RF transceiver; TSNP16; -40÷85°C; reel,tape Supply voltage: 3.2...3.4V DC Frequency: 24...24.25GHz Case: TSNP16 Operating temperature: -40...85°C DC supply current: 45mA Number of transmitters: 1 Number of receivers: 1 Kind of integrated circuit: MMIC; RF transceiver Noise Figure: 10dB Open-loop gain: 26dB Kind of package: reel; tape Type of integrated circuit: interface Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. |
| S25FL512SAGMFI013 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IPA70R600P7SXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8.5A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8.5A
Case: TO220FP
On-state resistance: 0.49Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 10.5nC
Power dissipation: 25W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8.5A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8.5A
Case: TO220FP
On-state resistance: 0.49Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 10.5nC
Power dissipation: 25W
на замовлення 89 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 42.33 грн |
| 20+ | 37.66 грн |
| 50+ | 26.42 грн |
| IPW60R017C7XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 109A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 109A
Power dissipation: 446W
Case: TO247
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 240nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 109A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 109A
Power dissipation: 446W
Case: TO247
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 240nC
Kind of channel: enhancement
на замовлення 28 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1119.04 грн |
| 2+ | 994.11 грн |
| 5+ | 979.94 грн |
| FS75R12W2T4B11BOMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: AG-EASY2B-2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 375W
Technology: EasyPACK™ 2B
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: AG-EASY2B-2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 375W
Technology: EasyPACK™ 2B
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| PVT412PBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 27Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 140mA
On-state resistance: 27Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Turn-on time: 2ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 27Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 140mA
On-state resistance: 27Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Turn-on time: 2ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 1800 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 309.60 грн |
| 150+ | 258.32 грн |
| IPP120N20NFDAKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 84A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ FD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 84A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ FD
на замовлення 4 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 449.59 грн |
| BAS4007E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT143
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double independent
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT143
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double independent
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
товару немає в наявності
В кошику
од. на суму грн.
| BSZ018NE2LSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Case: PG-TSDSON-8
On-state resistance: 1.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 69W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Case: PG-TSDSON-8
On-state resistance: 1.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 69W
Polarisation: unipolar
на замовлення 4970 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 60.83 грн |
| 10+ | 52.50 грн |
| 20+ | 50.83 грн |
| BCR166E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 200mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 70
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 200mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 70
Mounting: SMD
на замовлення 24000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.98 грн |
| BGT24MTR12E6327XUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Supply voltage: 3.135...3.465V DC
Interface: SPI
Frequency: 24...24.25GHz
Case: VQFN32
Operating temperature: -40...105°C
DC supply current: 210mA
Number of transmitters: 1
Number of receivers: 2
Kind of integrated circuit: MMIC; RF transceiver
Noise Figure: 12dB
Open-loop gain: 26dB
Kind of package: reel; tape
Type of integrated circuit: interface
Mounting: SMD
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Supply voltage: 3.135...3.465V DC
Interface: SPI
Frequency: 24...24.25GHz
Case: VQFN32
Operating temperature: -40...105°C
DC supply current: 210mA
Number of transmitters: 1
Number of receivers: 2
Kind of integrated circuit: MMIC; RF transceiver
Noise Figure: 12dB
Open-loop gain: 26dB
Kind of package: reel; tape
Type of integrated circuit: interface
Mounting: SMD
на замовлення 475 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 495.36 грн |
| 3+ | 370.81 грн |
| 5+ | 351.65 грн |
| 10+ | 342.48 грн |
| 25+ | 333.31 грн |
| 50+ | 324.15 грн |
| 100+ | 319.15 грн |
| BGT24LTR11N16E6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; TSNP16; -40÷85°C; reel,tape
Supply voltage: 3.2...3.4V DC
Frequency: 24...24.25GHz
Case: TSNP16
Operating temperature: -40...85°C
DC supply current: 45mA
Number of transmitters: 1
Number of receivers: 1
Kind of integrated circuit: MMIC; RF transceiver
Noise Figure: 10dB
Open-loop gain: 26dB
Kind of package: reel; tape
Type of integrated circuit: interface
Mounting: SMD
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; TSNP16; -40÷85°C; reel,tape
Supply voltage: 3.2...3.4V DC
Frequency: 24...24.25GHz
Case: TSNP16
Operating temperature: -40...85°C
DC supply current: 45mA
Number of transmitters: 1
Number of receivers: 1
Kind of integrated circuit: MMIC; RF transceiver
Noise Figure: 10dB
Open-loop gain: 26dB
Kind of package: reel; tape
Type of integrated circuit: interface
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.