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FM25V20-G FM25V20-G Infineon Technologies Infineon-FM25V20_001-84500_0F_V-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec9233f418d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 2MBIT SPI 40MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
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FM25V01-G FM25V01-G Infineon Technologies Infineon-FM25V01_128-Kbit_(16_K_8)_Serial_(SPI)_F-RAM_Datasheet-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec920554188 Description: IC FRAM 128KBIT SPI 40MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY8C6144AZI-S4F93 CY8C6144AZI-S4F93 Infineon Technologies Infineon-PSoC_6_MCU_CY8C61X4-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0276175906 Description: IC MCU 32BIT 256KB FLASH 80TQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 50MHz, 150MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 12b SAR, Sigma-Delta; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, I2C, LINbus, QSPI, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-TQFP (12x12)
Part Status: Active
Number of I/O: 62
DigiKey Programmable: Not Verified
на замовлення 228 шт:
термін постачання 21-31 дні (днів)
1+532.40 грн
10+395.28 грн
25+366.06 грн
119+310.36 грн
В кошику  од. на суму  грн.
CY8C6144AZI-S4F92 CY8C6144AZI-S4F92 Infineon Technologies Infineon-PSoC_6_MCU_CY8C61X4-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0276175906 Description: IC MCU 32BIT 256KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 50MHz, 150MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 12b SAR, Sigma-Delta; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, I2C, LINbus, QSPI, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
Number of I/O: 54
DigiKey Programmable: Not Verified
на замовлення 119 шт:
термін постачання 21-31 дні (днів)
1+522.85 грн
10+388.15 грн
25+359.35 грн
В кошику  од. на суму  грн.
CY8C6144LQI-S4F92 CY8C6144LQI-S4F92 Infineon Technologies Infineon-PSoC_6_MCU_CY8C61X4-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0276175906 Description: IC MCU 32BIT 256KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 50MHz, 150MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 12b SAR, Sigma-Delta; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 52
DigiKey Programmable: Not Verified
на замовлення 227 шт:
термін постачання 21-31 дні (днів)
1+542.74 грн
10+403.63 грн
25+373.91 грн
100+320.18 грн
В кошику  од. на суму  грн.
CY8C6144AZQ-S4F93 CY8C6144AZQ-S4F93 Infineon Technologies Infineon-PSoC_6_MCU_CY8C61X4-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0276175906 Description: IC MCU 32BIT 256KB FLASH 80TQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 50MHz, 150MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b SAR, Sigma-Delta; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, I2C, LINbus, QSPI, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-TQFP (12x12)
Part Status: Active
Number of I/O: 62
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
CY8C6144AZI-S4F82 CY8C6144AZI-S4F82 Infineon Technologies Infineon-PSoC_6_MCU_CY8C61X4-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0276175906 Description: IC MCU 32BIT 256KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 50MHz, 150MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b SAR, Sigma-Delta; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
Number of I/O: 54
DigiKey Programmable: Not Verified
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CY8C6144AZI-S4F12 CY8C6144AZI-S4F12 Infineon Technologies Infineon-PSoC_6_MCU_CY8C61X4-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0276175906 Description: IC MCU 32BIT 256KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 50MHz, 150MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b SAR, Sigma-Delta; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
Number of I/O: 54
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
CY8C6144LQI-S4F82 CY8C6144LQI-S4F82 Infineon Technologies Infineon-PSoC_6_MCU_CY8C61X4-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0276175906 Description: IC MCU 32BIT 256KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 50MHz, 150MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b SAR, Sigma-Delta; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 52
DigiKey Programmable: Not Verified
на замовлення 2505 шт:
термін постачання 21-31 дні (днів)
1+519.66 грн
10+385.77 грн
25+357.11 грн
100+305.59 грн
260+291.00 грн
520+282.60 грн
1040+271.18 грн
В кошику  од. на суму  грн.
CYT4BF8CDDR0AEEGST CYT4BF8CDDR0AEEGST Infineon Technologies Description: IC MCU 32BT 8.188MB FLSH 176QFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 350MHz
Program Memory Size: 8.188MB (8.188M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 99x12b SAR
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: eMMC/SD/SDIO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 176-TEQFP (24x24)
Number of I/O: 148
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
CYT4BB7CEBQ0AEEGS Infineon Technologies Infineon-TRAVEO_T2G_automotive_microcontroller_CYT3BB_4BB_32-BIT_ARM_CORTEX-M7-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea49a27342 Description: IC MCU 32BT 4.0625MB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 70x12b SAR
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 116
DigiKey Programmable: Not Verified
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CYT4BB7CEBQ0AEEGST Infineon Technologies Infineon-TRAVEO_T2G_automotive_microcontroller_CYT3BB_4BB_32-BIT_ARM_CORTEX-M7-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea49a27342 Description: IC MCU 32BT 4.0625MB FLSH 144QFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 70x12b SAR
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 116
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
CYT4BB7CEBQ0AESGS Infineon Technologies Infineon-TRAVEO_T2G_automotive_microcontroller_CYT3BB_4BB_32-BIT_ARM_CORTEX-M7-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea49a27342 Description: IC MCU 32BT 4.0625MB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 70x12b SAR
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 116
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
CYT4BFCCHDR0BZEGST CYT4BFCCHDR0BZEGST Infineon Technologies Description: IC MCU 32BIT 8.188MB FLSH 320BGA
Packaging: Tape & Reel (TR)
Package / Case: 320-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 350MHz
Program Memory Size: 8.188MB (8.188M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 114x12b SAR
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: eMMC/SD/SDIO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 320-BGA (17x17)
Part Status: Active
Number of I/O: 195
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
CYT4BBBCEBR0BZEGST Infineon Technologies Description: Auto MCU
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CYT4BB8CEBQ0AEEGS CYT4BB8CEBQ0AEEGS Infineon Technologies Infineon-TRAVEO_T2G_automotive_microcontroller_CYT3BB_4BB_32-BIT_ARM_CORTEX-M7-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea49a27342 Description: IC MCU 32BT 4.0625MB FLSH 176QFP
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-TEQFP (24x24)
Number of I/O: 148
DigiKey Programmable: Not Verified
на замовлення 1353 шт:
термін постачання 21-31 дні (днів)
1+2238.61 грн
10+1741.80 грн
40+1594.74 грн
120+1419.66 грн
280+1374.57 грн
В кошику  од. на суму  грн.
CYT4BB7CEBQ0AESGST Infineon Technologies Infineon-TRAVEO_T2G_automotive_microcontroller_CYT3BB_4BB_32-BIT_ARM_CORTEX-M7-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea49a27342 Description: IC MCU 32BT 4.0625MB FLSH 144QFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 70x12b SAR
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 116
DigiKey Programmable: Not Verified
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CY8C20396-24LQXI CY8C20396-24LQXI Infineon Technologies Description: IC CAPSENSE 19 I/O 16K 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Part Status: Obsolete
Number of I/O: 19
DigiKey Programmable: Not Verified
на замовлення 106 шт:
термін постачання 21-31 дні (днів)
1+377.21 грн
10+277.11 грн
25+255.40 грн
80+220.38 грн
В кошику  од. на суму  грн.
CY8C4147AZQ-S455 Infineon Technologies PSoC_4100S_Plus_RevH_9-14-18.pdf Description: IC MCU 32BIT 128KB FLASH 64TQFP
товару немає в наявності
В кошику  од. на суму  грн.
CYUSB2405A2-24FNXIT Infineon Technologies Description: eRT2
Packaging: Tape & Reel (TR)
Part Status: Active
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
CYUSB2402A2-24FNXIT Infineon Technologies Description: eRT2
Packaging: Tape & Reel (TR)
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY9BF121MBGL-GK9E1 CY9BF121MBGL-GK9E1 Infineon Technologies Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9 Description: IC MCU 32BIT 96KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 26x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Part Status: Active
Number of I/O: 65
DigiKey Programmable: Not Verified
на замовлення 4846 шт:
термін постачання 21-31 дні (днів)
1+324.69 грн
10+236.72 грн
25+217.79 грн
80+187.53 грн
230+176.32 грн
490+170.10 грн
980+162.75 грн
2450+157.93 грн
В кошику  од. на суму  грн.
CY9BF121LPMC-G-MNE2 CY9BF121LPMC-G-MNE2 Infineon Technologies Description: IC MCU 32BIT 96KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Discontinued at Digi-Key
Number of I/O: 50
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BGR420H6327 Infineon Technologies INFNS15355-1.pdf?t.download=true&u=5oefqw Description: BIASED LOW NOISE RF TRANSISTOR
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Gain: 26dB
Power - Max: 120mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 13V
Noise Figure (dB Typ @ f): 1.5dB ~ 1.7dB @ 400MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-4-1
Part Status: Active
на замовлення 222000 шт:
термін постачання 21-31 дні (днів)
1598+15.12 грн
Мінімальне замовлення: 1598
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FM0-64L-S6E1C3 FM0-64L-S6E1C3 Infineon Technologies Description: S6E1C3 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-M0+
Utilized IC / Part: S6E1C3
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MB39C022NPN-G-ERE1 MB39C022NPN-G-ERE1 Infineon Technologies download Description: IC REG DL BUCK/LINEAR SYNC 10SON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Frequency - Switching: 2MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: 10-SON (3x3)
Voltage/Current - Output 1: 0.8V ~ 4.5V, 600mA
Voltage/Current - Output 2: 1.2V, 300mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
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MB39C022NPN-G-ERE1 MB39C022NPN-G-ERE1 Infineon Technologies download Description: IC REG DL BUCK/LINEAR SYNC 10SON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Frequency - Switching: 2MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: 10-SON (3x3)
Voltage/Current - Output 1: 0.8V ~ 4.5V, 600mA
Voltage/Current - Output 2: 1.2V, 300mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
на замовлення 69 шт:
термін постачання 21-31 дні (днів)
2+190.20 грн
10+164.15 грн
25+154.86 грн
Мінімальне замовлення: 2
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CYBT-423028-EVAL CYBT-423028-EVAL Infineon Technologies download Description: MODULE KIT
Packaging: Bulk
For Use With/Related Products: CYBT-423028-02
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5.x
Supplied Contents: Board(s)
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+3477.69 грн
В кошику  од. на суму  грн.
BGM7MHLL4L12E6327XTSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC RF AMP MMIC 12ATSLP
Packaging: Bulk
на замовлення 112500 шт:
термін постачання 21-31 дні (днів)
257+93.11 грн
Мінімальне замовлення: 257
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FM25C160B-G FM25C160B-G Infineon Technologies Infineon-FM25C160B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec906b74172&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 16KBIT SPI 20MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
на замовлення 2062 шт:
термін постачання 21-31 дні (днів)
2+176.67 грн
10+151.04 грн
25+144.07 грн
97+126.03 грн
194+121.57 грн
291+119.04 грн
582+112.94 грн
1067+109.44 грн
Мінімальне замовлення: 2
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IM393S6E3XKLA1 IM393S6E3XKLA1 Infineon Technologies Infineon-IM393-S6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d912478e4 Description: POWER MODULE 600V 6A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 6 A
Voltage: 600 V
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CY9AF116MPMC-GNE1 CY9AF116MPMC-GNE1 Infineon Technologies Description: IC MCU 32BIT 512KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Active
Number of I/O: 66
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S29GL128S10DHI010 S29GL128S10DHI010 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
на замовлення 1300 шт:
термін постачання 21-31 дні (днів)
1+413.82 грн
10+363.70 грн
25+356.78 грн
40+332.39 грн
80+298.26 грн
260+297.14 грн
520+273.92 грн
1040+262.36 грн
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BSM10GP60BOSA1 Infineon Technologies INFNS12635-1.pdf Description: BSM10GP60 - IGBT MODULE 600V 20A
Packaging: Bulk
Part Status: Active
на замовлення 107 шт:
термін постачання 21-31 дні (днів)
5+4595.96 грн
Мінімальне замовлення: 5
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CYPD7299-68LDXST Infineon Technologies Description: CCG7D
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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IKQ120N120CS7XKSA1 IKQ120N120CS7XKSA1 Infineon Technologies Infineon-IKQ120N120CS7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c850f4bee0185a59a0dcd7867 Description: IGBT TRENCH FS 1200V 216A TO247
Packaging: Tube
Part Status: Active
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 205 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Gate Charge: 710 nC
Current - Collector (Ic) (Max): 216 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 1004 W
Td (on/off) @ 25°C: 44ns/205ns
Switching Energy: 10.3mJ (on), 5.72mJ (off)
на замовлення 235 шт:
термін постачання 21-31 дні (днів)
1+1217.59 грн
30+724.85 грн
120+628.35 грн
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IGQ120N120S7XKSA1 IGQ120N120S7XKSA1 Infineon Technologies Infineon-IGQ120N120S7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c850f4bee0185a59a2e227870 Description: IGBT
Packaging: Tube
Part Status: Active
на замовлення 211 шт:
термін постачання 21-31 дні (днів)
1+1065.59 грн
30+627.09 грн
120+542.94 грн
В кошику  од. на суму  грн.
BTS70082EPZXUMA1 BTS70082EPZXUMA1 Infineon Technologies Infineon-BTS7008-2EPZ-DataSheet-v01_10-EN.pdf?fileId=5546d4626e651a41016e7e74b26b1098 Description: PROFET PG-TSDSO-14
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BSZ0804LSATMA1 BSZ0804LSATMA1 Infineon Technologies Infineon-BSZ0804LS-DataSheet-v02_00-EN.pdf?fileId=5546d462700c0ae601708b98c719142a Description: MOSFET N-CH 100V 11A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
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BSZ0804LSATMA1 BSZ0804LSATMA1 Infineon Technologies Infineon-BSZ0804LS-DataSheet-v02_00-EN.pdf?fileId=5546d462700c0ae601708b98c719142a Description: MOSFET N-CH 100V 11A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
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ISZ0804NLSATMA1 ISZ0804NLSATMA1 Infineon Technologies Infineon-ISZ0804NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd2bc3896d7a Description: MOSFET N-CH 100V 11A/58A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 28µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
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ISZ0804NLSATMA1 ISZ0804NLSATMA1 Infineon Technologies Infineon-ISZ0804NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd2bc3896d7a Description: MOSFET N-CH 100V 11A/58A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 28µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
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BSZ088N03MSG BSZ088N03MSG Infineon Technologies INFNS16426-1.pdf?t.download=true&u=5oefqw Description: BSZ088N03 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
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BSZ0803LSATMA1 BSZ0803LSATMA1 Infineon Technologies Infineon-BSZ0803LS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601708b98d50c142d Description: MOSFET N-CH 100V 9A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
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BSZ0803LSATMA1 BSZ0803LSATMA1 Infineon Technologies Infineon-BSZ0803LS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601708b98d50c142d Description: MOSFET N-CH 100V 9A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
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S6SBP202A1FVA1001 S6SBP202A1FVA1001 Infineon Technologies download Description: KIT S6SBP202A
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 2.5V ~ 42V
Current - Output: 2.4A
Regulator Topology: Buck-Boost
Board Type: Fully Populated
Utilized IC / Part: S6BP202A
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up or Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+3655.95 грн
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S26KS256SDPBHA020 S26KS256SDPBHA020 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Bulk
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 346 шт:
термін постачання 21-31 дні (днів)
33+694.57 грн
Мінімальне замовлення: 33
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CY7C1441KV33-133AXI CY7C1441KV33-133AXI Infineon Technologies download Description: IC SRAM 36MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Part Status: Active
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
на замовлення 146 шт:
термін постачання 21-31 дні (днів)
1+4794.75 грн
10+4261.67 грн
25+4122.39 грн
72+3720.84 грн
144+3626.19 грн
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IRFSL3206PBF IRFSL3206PBF Infineon Technologies irfs3206pbf.pdf?fileId=5546d462533600a401535636671c215a Description: MOSFET N-CH 60V 120A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
2+264.21 грн
50+134.51 грн
100+127.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IMBG65R048M1HXTMA1 IMBG65R048M1HXTMA1 Infineon Technologies Infineon-IMBG65R048M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49e77323159f Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
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IMBG65R048M1HXTMA1 IMBG65R048M1HXTMA1 Infineon Technologies Infineon-IMBG65R048M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49e77323159f Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
1+684.40 грн
10+451.37 грн
В кошику  од. на суму  грн.
IMBG65R057M1HXTMA1 IMBG65R057M1HXTMA1 Infineon Technologies Infineon-IMBG65R057M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49e7874715a2 Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Power Dissipation (Max): 161W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
товару немає в наявності
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IMBG65R057M1HXTMA1 IMBG65R057M1HXTMA1 Infineon Technologies Infineon-IMBG65R057M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49e7874715a2 Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Power Dissipation (Max): 161W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
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IMBG65R083M1HXTMA1 IMBG65R083M1HXTMA1 Infineon Technologies Infineon-IMBG65R083M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0a426164d Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
товару немає в наявності
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IMBG65R083M1HXTMA1 IMBG65R083M1HXTMA1 Infineon Technologies Infineon-IMBG65R083M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0a426164d Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
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IMBG65R107M1HXTMA1 IMBG65R107M1HXTMA1 Infineon Technologies Infineon-IMBG65R107M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0b8bd1650 Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
товару немає в наявності
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IMBG65R107M1HXTMA1 IMBG65R107M1HXTMA1 Infineon Technologies Infineon-IMBG65R107M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0b8bd1650 Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
на замовлення 810 шт:
термін постачання 21-31 дні (днів)
1+479.08 грн
10+310.37 грн
100+226.36 грн
В кошику  од. на суму  грн.
TZ740N22KS01HPSA3 Infineon Technologies Infineon-TZ740N-DS-v03_05-EN.pdf?fileId=db3a304412b407950112b42f88224c15 Description: MOODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 819 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.2 kV
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TLE9261BQXXUMA2 Infineon Technologies Infineon-TLE9261BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc8016073c1554f5b04 Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
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CY8C4013LQI-411T CY8C4013LQI-411T Infineon Technologies Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 8KB FLASH 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 16-QFN (3x3)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+52.38 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
FM25V20-G Infineon-FM25V20_001-84500_0F_V-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec9233f418d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM25V20-G
Виробник: Infineon Technologies
Description: IC FRAM 2MBIT SPI 40MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
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FM25V01-G Infineon-FM25V01_128-Kbit_(16_K_8)_Serial_(SPI)_F-RAM_Datasheet-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec920554188
FM25V01-G
Виробник: Infineon Technologies
Description: IC FRAM 128KBIT SPI 40MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
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CY8C6144AZI-S4F93 Infineon-PSoC_6_MCU_CY8C61X4-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0276175906
CY8C6144AZI-S4F93
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 80TQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 50MHz, 150MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 12b SAR, Sigma-Delta; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, I2C, LINbus, QSPI, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-TQFP (12x12)
Part Status: Active
Number of I/O: 62
DigiKey Programmable: Not Verified
на замовлення 228 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+532.40 грн
10+395.28 грн
25+366.06 грн
119+310.36 грн
В кошику  од. на суму  грн.
CY8C6144AZI-S4F92 Infineon-PSoC_6_MCU_CY8C61X4-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0276175906
CY8C6144AZI-S4F92
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 50MHz, 150MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 12b SAR, Sigma-Delta; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, I2C, LINbus, QSPI, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
Number of I/O: 54
DigiKey Programmable: Not Verified
на замовлення 119 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+522.85 грн
10+388.15 грн
25+359.35 грн
В кошику  од. на суму  грн.
CY8C6144LQI-S4F92 Infineon-PSoC_6_MCU_CY8C61X4-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0276175906
CY8C6144LQI-S4F92
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 50MHz, 150MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 12b SAR, Sigma-Delta; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 52
DigiKey Programmable: Not Verified
на замовлення 227 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+542.74 грн
10+403.63 грн
25+373.91 грн
100+320.18 грн
В кошику  од. на суму  грн.
CY8C6144AZQ-S4F93 Infineon-PSoC_6_MCU_CY8C61X4-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0276175906
CY8C6144AZQ-S4F93
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 80TQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 50MHz, 150MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b SAR, Sigma-Delta; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, I2C, LINbus, QSPI, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-TQFP (12x12)
Part Status: Active
Number of I/O: 62
DigiKey Programmable: Not Verified
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CY8C6144AZI-S4F82 Infineon-PSoC_6_MCU_CY8C61X4-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0276175906
CY8C6144AZI-S4F82
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 50MHz, 150MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b SAR, Sigma-Delta; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
Number of I/O: 54
DigiKey Programmable: Not Verified
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CY8C6144AZI-S4F12 Infineon-PSoC_6_MCU_CY8C61X4-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0276175906
CY8C6144AZI-S4F12
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 50MHz, 150MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b SAR, Sigma-Delta; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
Number of I/O: 54
DigiKey Programmable: Not Verified
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CY8C6144LQI-S4F82 Infineon-PSoC_6_MCU_CY8C61X4-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0276175906
CY8C6144LQI-S4F82
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 50MHz, 150MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b SAR, Sigma-Delta; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 52
DigiKey Programmable: Not Verified
на замовлення 2505 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+519.66 грн
10+385.77 грн
25+357.11 грн
100+305.59 грн
260+291.00 грн
520+282.60 грн
1040+271.18 грн
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CYT4BF8CDDR0AEEGST
CYT4BF8CDDR0AEEGST
Виробник: Infineon Technologies
Description: IC MCU 32BT 8.188MB FLSH 176QFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 350MHz
Program Memory Size: 8.188MB (8.188M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 99x12b SAR
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: eMMC/SD/SDIO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 176-TEQFP (24x24)
Number of I/O: 148
DigiKey Programmable: Not Verified
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CYT4BB7CEBQ0AEEGS Infineon-TRAVEO_T2G_automotive_microcontroller_CYT3BB_4BB_32-BIT_ARM_CORTEX-M7-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea49a27342
Виробник: Infineon Technologies
Description: IC MCU 32BT 4.0625MB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 70x12b SAR
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 116
DigiKey Programmable: Not Verified
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CYT4BB7CEBQ0AEEGST Infineon-TRAVEO_T2G_automotive_microcontroller_CYT3BB_4BB_32-BIT_ARM_CORTEX-M7-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea49a27342
Виробник: Infineon Technologies
Description: IC MCU 32BT 4.0625MB FLSH 144QFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 70x12b SAR
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 116
DigiKey Programmable: Not Verified
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CYT4BB7CEBQ0AESGS Infineon-TRAVEO_T2G_automotive_microcontroller_CYT3BB_4BB_32-BIT_ARM_CORTEX-M7-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea49a27342
Виробник: Infineon Technologies
Description: IC MCU 32BT 4.0625MB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 70x12b SAR
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 116
DigiKey Programmable: Not Verified
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CYT4BFCCHDR0BZEGST
CYT4BFCCHDR0BZEGST
Виробник: Infineon Technologies
Description: IC MCU 32BIT 8.188MB FLSH 320BGA
Packaging: Tape & Reel (TR)
Package / Case: 320-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 350MHz
Program Memory Size: 8.188MB (8.188M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 114x12b SAR
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: eMMC/SD/SDIO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 320-BGA (17x17)
Part Status: Active
Number of I/O: 195
DigiKey Programmable: Not Verified
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CYT4BBBCEBR0BZEGST
Виробник: Infineon Technologies
Description: Auto MCU
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CYT4BB8CEBQ0AEEGS Infineon-TRAVEO_T2G_automotive_microcontroller_CYT3BB_4BB_32-BIT_ARM_CORTEX-M7-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea49a27342
CYT4BB8CEBQ0AEEGS
Виробник: Infineon Technologies
Description: IC MCU 32BT 4.0625MB FLSH 176QFP
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-TEQFP (24x24)
Number of I/O: 148
DigiKey Programmable: Not Verified
на замовлення 1353 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2238.61 грн
10+1741.80 грн
40+1594.74 грн
120+1419.66 грн
280+1374.57 грн
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CYT4BB7CEBQ0AESGST Infineon-TRAVEO_T2G_automotive_microcontroller_CYT3BB_4BB_32-BIT_ARM_CORTEX-M7-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea49a27342
Виробник: Infineon Technologies
Description: IC MCU 32BT 4.0625MB FLSH 144QFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 70x12b SAR
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 116
DigiKey Programmable: Not Verified
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CY8C20396-24LQXI
CY8C20396-24LQXI
Виробник: Infineon Technologies
Description: IC CAPSENSE 19 I/O 16K 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Part Status: Obsolete
Number of I/O: 19
DigiKey Programmable: Not Verified
на замовлення 106 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+377.21 грн
10+277.11 грн
25+255.40 грн
80+220.38 грн
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CY8C4147AZQ-S455 PSoC_4100S_Plus_RevH_9-14-18.pdf
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64TQFP
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CYUSB2405A2-24FNXIT
Виробник: Infineon Technologies
Description: eRT2
Packaging: Tape & Reel (TR)
Part Status: Active
DigiKey Programmable: Not Verified
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CYUSB2402A2-24FNXIT
Виробник: Infineon Technologies
Description: eRT2
Packaging: Tape & Reel (TR)
Part Status: Active
DigiKey Programmable: Not Verified
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CY9BF121MBGL-GK9E1 Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9
CY9BF121MBGL-GK9E1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 96KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 26x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Part Status: Active
Number of I/O: 65
DigiKey Programmable: Not Verified
на замовлення 4846 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+324.69 грн
10+236.72 грн
25+217.79 грн
80+187.53 грн
230+176.32 грн
490+170.10 грн
980+162.75 грн
2450+157.93 грн
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CY9BF121LPMC-G-MNE2
CY9BF121LPMC-G-MNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 96KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Discontinued at Digi-Key
Number of I/O: 50
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BGR420H6327 INFNS15355-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: BIASED LOW NOISE RF TRANSISTOR
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Gain: 26dB
Power - Max: 120mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 13V
Noise Figure (dB Typ @ f): 1.5dB ~ 1.7dB @ 400MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-4-1
Part Status: Active
на замовлення 222000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1598+15.12 грн
Мінімальне замовлення: 1598
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FM0-64L-S6E1C3
FM0-64L-S6E1C3
Виробник: Infineon Technologies
Description: S6E1C3 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-M0+
Utilized IC / Part: S6E1C3
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MB39C022NPN-G-ERE1 download
MB39C022NPN-G-ERE1
Виробник: Infineon Technologies
Description: IC REG DL BUCK/LINEAR SYNC 10SON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Frequency - Switching: 2MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: 10-SON (3x3)
Voltage/Current - Output 1: 0.8V ~ 4.5V, 600mA
Voltage/Current - Output 2: 1.2V, 300mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
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MB39C022NPN-G-ERE1 download
MB39C022NPN-G-ERE1
Виробник: Infineon Technologies
Description: IC REG DL BUCK/LINEAR SYNC 10SON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Frequency - Switching: 2MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: 10-SON (3x3)
Voltage/Current - Output 1: 0.8V ~ 4.5V, 600mA
Voltage/Current - Output 2: 1.2V, 300mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
на замовлення 69 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+190.20 грн
10+164.15 грн
25+154.86 грн
Мінімальне замовлення: 2
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CYBT-423028-EVAL download
CYBT-423028-EVAL
Виробник: Infineon Technologies
Description: MODULE KIT
Packaging: Bulk
For Use With/Related Products: CYBT-423028-02
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5.x
Supplied Contents: Board(s)
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3477.69 грн
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BGM7MHLL4L12E6327XTSA1 Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: IC RF AMP MMIC 12ATSLP
Packaging: Bulk
на замовлення 112500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
257+93.11 грн
Мінімальне замовлення: 257
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FM25C160B-G Infineon-FM25C160B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec906b74172&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM25C160B-G
Виробник: Infineon Technologies
Description: IC FRAM 16KBIT SPI 20MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
на замовлення 2062 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+176.67 грн
10+151.04 грн
25+144.07 грн
97+126.03 грн
194+121.57 грн
291+119.04 грн
582+112.94 грн
1067+109.44 грн
Мінімальне замовлення: 2
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IM393S6E3XKLA1 Infineon-IM393-S6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d912478e4
IM393S6E3XKLA1
Виробник: Infineon Technologies
Description: POWER MODULE 600V 6A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 6 A
Voltage: 600 V
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CY9AF116MPMC-GNE1
CY9AF116MPMC-GNE1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Active
Number of I/O: 66
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S29GL128S10DHI010 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL128S10DHI010
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
на замовлення 1300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+413.82 грн
10+363.70 грн
25+356.78 грн
40+332.39 грн
80+298.26 грн
260+297.14 грн
520+273.92 грн
1040+262.36 грн
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BSM10GP60BOSA1 INFNS12635-1.pdf
Виробник: Infineon Technologies
Description: BSM10GP60 - IGBT MODULE 600V 20A
Packaging: Bulk
Part Status: Active
на замовлення 107 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+4595.96 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
CYPD7299-68LDXST
Виробник: Infineon Technologies
Description: CCG7D
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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IKQ120N120CS7XKSA1 Infineon-IKQ120N120CS7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c850f4bee0185a59a0dcd7867
IKQ120N120CS7XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 1200V 216A TO247
Packaging: Tube
Part Status: Active
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 205 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Gate Charge: 710 nC
Current - Collector (Ic) (Max): 216 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 1004 W
Td (on/off) @ 25°C: 44ns/205ns
Switching Energy: 10.3mJ (on), 5.72mJ (off)
на замовлення 235 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1217.59 грн
30+724.85 грн
120+628.35 грн
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IGQ120N120S7XKSA1 Infineon-IGQ120N120S7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c850f4bee0185a59a2e227870
IGQ120N120S7XKSA1
Виробник: Infineon Technologies
Description: IGBT
Packaging: Tube
Part Status: Active
на замовлення 211 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1065.59 грн
30+627.09 грн
120+542.94 грн
В кошику  од. на суму  грн.
BTS70082EPZXUMA1 Infineon-BTS7008-2EPZ-DataSheet-v01_10-EN.pdf?fileId=5546d4626e651a41016e7e74b26b1098
BTS70082EPZXUMA1
Виробник: Infineon Technologies
Description: PROFET PG-TSDSO-14
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BSZ0804LSATMA1 Infineon-BSZ0804LS-DataSheet-v02_00-EN.pdf?fileId=5546d462700c0ae601708b98c719142a
BSZ0804LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 11A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
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BSZ0804LSATMA1 Infineon-BSZ0804LS-DataSheet-v02_00-EN.pdf?fileId=5546d462700c0ae601708b98c719142a
BSZ0804LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 11A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
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ISZ0804NLSATMA1 Infineon-ISZ0804NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd2bc3896d7a
ISZ0804NLSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 11A/58A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 28µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
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ISZ0804NLSATMA1 Infineon-ISZ0804NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd2bc3896d7a
ISZ0804NLSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 11A/58A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 28µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
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BSZ088N03MSG INFNS16426-1.pdf?t.download=true&u=5oefqw
BSZ088N03MSG
Виробник: Infineon Technologies
Description: BSZ088N03 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
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BSZ0803LSATMA1 Infineon-BSZ0803LS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601708b98d50c142d
BSZ0803LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 9A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
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BSZ0803LSATMA1 Infineon-BSZ0803LS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601708b98d50c142d
BSZ0803LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 9A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
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S6SBP202A1FVA1001 download
S6SBP202A1FVA1001
Виробник: Infineon Technologies
Description: KIT S6SBP202A
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 2.5V ~ 42V
Current - Output: 2.4A
Regulator Topology: Buck-Boost
Board Type: Fully Populated
Utilized IC / Part: S6BP202A
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up or Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3655.95 грн
В кошику  од. на суму  грн.
S26KS256SDPBHA020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
S26KS256SDPBHA020
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Bulk
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 346 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
33+694.57 грн
Мінімальне замовлення: 33
В кошику  од. на суму  грн.
CY7C1441KV33-133AXI download
CY7C1441KV33-133AXI
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Part Status: Active
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
на замовлення 146 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4794.75 грн
10+4261.67 грн
25+4122.39 грн
72+3720.84 грн
144+3626.19 грн
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IRFSL3206PBF irfs3206pbf.pdf?fileId=5546d462533600a401535636671c215a
IRFSL3206PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+264.21 грн
50+134.51 грн
100+127.07 грн
Мінімальне замовлення: 2
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IMBG65R048M1HXTMA1 Infineon-IMBG65R048M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49e77323159f
IMBG65R048M1HXTMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
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IMBG65R048M1HXTMA1 Infineon-IMBG65R048M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49e77323159f
IMBG65R048M1HXTMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+684.40 грн
10+451.37 грн
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IMBG65R057M1HXTMA1 Infineon-IMBG65R057M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49e7874715a2
IMBG65R057M1HXTMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Power Dissipation (Max): 161W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
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IMBG65R057M1HXTMA1 Infineon-IMBG65R057M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49e7874715a2
IMBG65R057M1HXTMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Power Dissipation (Max): 161W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
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IMBG65R083M1HXTMA1 Infineon-IMBG65R083M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0a426164d
IMBG65R083M1HXTMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
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IMBG65R083M1HXTMA1 Infineon-IMBG65R083M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0a426164d
IMBG65R083M1HXTMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
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IMBG65R107M1HXTMA1 Infineon-IMBG65R107M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0b8bd1650
IMBG65R107M1HXTMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
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IMBG65R107M1HXTMA1 Infineon-IMBG65R107M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0b8bd1650
IMBG65R107M1HXTMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
на замовлення 810 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+479.08 грн
10+310.37 грн
100+226.36 грн
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TZ740N22KS01HPSA3 Infineon-TZ740N-DS-v03_05-EN.pdf?fileId=db3a304412b407950112b42f88224c15
Виробник: Infineon Technologies
Description: MOODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 819 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.2 kV
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TLE9261BQXXUMA2 Infineon-TLE9261BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc8016073c1554f5b04
Виробник: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
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CY8C4013LQI-411T Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4013LQI-411T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 8KB FLASH 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 16-QFN (3x3)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+52.38 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
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