Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (361246) > Сторінка 1004 з 6021
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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JAN1N937BUR-1 | Microchip Technology |
Description: DIODE ZENER 9V 500MW DO35 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 9 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-35 Grade: Military Power - Max: 500 mW Current - Reverse Leakage @ Vr: 10 µA @ 6 V Qualification: MIL-PRF-19500/156 |
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JANTX1N937BUR-1 | Microchip Technology |
Description: DIODE ZENER 9V 500MW DO35 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 9 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-35 Grade: Military Power - Max: 500 mW Current - Reverse Leakage @ Vr: 10 µA @ 6 V Qualification: MIL-PRF-19500/156 |
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JAN1N938B-1 | Microchip Technology |
 Description: DIODE ZENER 9V 500MW DO35Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 9 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 10 µA @ 6 V Grade: Military Qualification: MIL-PRF-19500/156 |
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JANS1N938B-1 | Microchip Technology |
Description: DIODE ZENER 9V 500MW DO35 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 9 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 10 µA @ 6 V Grade: Military Qualification: MIL-PRF-19500/156 |
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JANTX1N938B-1 | Microchip Technology |
Description: DIODE ZENER 9V 500MW DO35 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 9 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 10 µA @ 6 V Grade: Military Qualification: MIL-PRF-19500/156 |
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JANS1N938BUR-1 | Microchip Technology |
Description: DIODE ZENER 9V 500MW DO35 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 9 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 10 µA @ 6 V Grade: Military Qualification: MIL-PRF-19500/156 |
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JANTX1N938BUR-1 | Microchip Technology |
Description: DIODE ZENER 9V 500MW DO35 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 9 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 10 µA @ 6 V Grade: Military Qualification: MIL-PRF-19500/156 |
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JAN2N1613 | Microchip Technology |
Description: TRANS NPN 30V 0.5A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/181 |
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| JAN2N1711 | Microchip Technology |
Description: TRANS NPN 30V 0.5A TO-5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-5 Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/225 |
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| JANTX2N1711 | Microchip Technology |
Description: TRANS NPN 30V 0.5A TO-5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-5 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/225 |
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JANTX2N2369AU | Microchip Technology |
Description: TRANS NPN 15V UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Supplier Device Package: U1 (SMD-1) Part Status: Active Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/317 |
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JAN2N2432 | Microchip Technology |
Description: TRANS NPN 30V 0.1A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 360 mW Grade: Military Qualification: MIL-PRF-19500/313 |
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JANTX2N2432 | Microchip Technology |
Description: TRANS NPN 30V 0.1A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 0.15mV @ 500µA, 10V Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 300 mW Grade: Military Qualification: MIL-PRF-19500/313 |
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JAN2N2432A | Microchip Technology |
Description: TRANS NPN 45V 0.1A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 360 mW Grade: Military Qualification: MIL-PRF-19500/313 |
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JANTX2N2432A | Microchip Technology |
Description: TRANS NPN 45V 0.1A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 0.15mV @ 500µA, 10V Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW Grade: Military Qualification: MIL-PRF-19500/313 |
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JAN2N3250A | Microchip Technology |
Description: TRANS PNP 60V 0.2A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V Supplier Device Package: TO-39 (TO-205AD) Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 360 mW Grade: Military Qualification: MIL-PRF-19500/323 |
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JANTX2N3250A | Microchip Technology |
Description: TRANS PNP 60V 0.2A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V Supplier Device Package: TO-39 (TO-205AD) Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 360 mW Grade: Military Qualification: MIL-PRF-19500/323 |
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JANS2N3439 | Microchip Technology |
Description: TRANS NPN 350V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/368 |
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| JANS2N3439U4 | Microchip Technology |
Description: TRANS NPN 350V 1A UA Packaging: Bulk Part Status: Active |
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| JANTX2N3439U4 | Microchip Technology |
Description: TRANS NPN 350V 1A UA Packaging: Bulk Part Status: Active |
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| JANTXV2N3439U4 | Microchip Technology |
Description: TRANS NPN 350V 1A UA Packaging: Bulk Part Status: Active |
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| JANS2N3439UA | Microchip Technology |
Description: TRANS NPN 350V 1A UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/368 |
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| JANTXV2N3439UA | Microchip Technology |
Description: TRANS NPN 350V 1A UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: UA Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/368 |
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JANS2N3440 | Microchip Technology |
Description: TRANS NPN 250V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/368 |
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| JANS2N3440U4 | Microchip Technology |
Description: TRANS NPN 250V 1A TO-5 Packaging: Bulk Part Status: Active |
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| JANS2N3440UA | Microchip Technology |
Description: TRANS NPN 250V 1A UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/368 |
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| JANTX2N3440UA | Microchip Technology |
Description: TRANS NPN 250V 1A UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: UA Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/368 |
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| JAN2N3441 | Microchip Technology |
Description: TRANS NPN 140V 3A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 4V Supplier Device Package: TO-66 (TO-213AA) Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 3 W Grade: Military Qualification: MIL-PRF-19500/369 |
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| JANTX2N3441 | Microchip Technology |
Description: TRANS NPN 140V 3A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 4V Supplier Device Package: TO-66 (TO-213AA) Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 3 W Grade: Military Qualification: MIL-PRF-19500/369 |
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| JAN2N3442 | Microchip Technology |
Description: TRANS NPN 140V 10A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V Supplier Device Package: TO-3 (TO-204AA) Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 6 W Grade: Military Qualification: MIL-PRF-19500/370 |
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| JANTXV2N3442 | Microchip Technology |
Description: TRANS NPN 140V 10A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V Supplier Device Package: TO-3 (TO-204AA) Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 6 W Grade: Military Qualification: MIL-PRF-19500/370 |
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| JAN2N3584 | Microchip Technology |
Description: TRANS NPN 250V 2A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V Supplier Device Package: TO-66 (TO-213AA) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 2.5 W Grade: Military Qualification: MIL-PRF-19500/384 |
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| JANTX2N3584 | Microchip Technology |
Description: TRANS NPN 250V 2A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V Supplier Device Package: TO-66 (TO-213AA) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 2.5 W Grade: Military Qualification: MIL-PRF-19500/384 |
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| JANS2N3634UB | Microchip Technology | Description: TRANS PNP 140V 1A TO-3 |
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JANS2N3637UB | Microchip Technology |
Description: TRANS PNP 175V 1A UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Supplier Device Package: UB Grade: Military Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 175 V Power - Max: 1.5 W Qualification: MIL-PRF-19500/357 |
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| JANTX2N3771 | Microchip Technology |
Description: TRANS NPN 40V 30A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 6A, 30A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 4V Supplier Device Package: TO-3 (TO-204AA) Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 6 W Grade: Military Qualification: MIL-PRF-19500/518 |
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| JAN2N3772 | Microchip Technology |
Description: TRANS NPN 60V 20A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 4A, 20A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 4V Supplier Device Package: TO-3 (TO-204AA) Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 6 W Grade: Military Qualification: MIL-PRF-19500/518 |
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| JAN2N4399 | Microchip Technology |
Description: TRANS PNP 60V 30A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 1A, 10A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V Supplier Device Package: TO-3 (TO-204AA) Grade: Military Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 5 W Qualification: MIL-PRF-19500/433 |
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| JANTX2N4399 | Microchip Technology |
Description: TRANS PNP 60V 30A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 1A, 10A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V Supplier Device Package: TO-3 (TO-204AA) Grade: Military Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 5 W Qualification: MIL-PRF-19500/433 |
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В кошику од. на суму грн. | |
| JANTX2N4854U | Microchip Technology |
Description: TRANS NPN/PNP 40V 0.6A 6SMD Packaging: Bulk Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN, PNP Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 600mW Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: 6-SMD Part Status: Active |
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В кошику од. на суму грн. | |
| JAN2N5038 | Microchip Technology |
Description: TRANS NPN 90V 20A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 1.2A, 12A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 5V Supplier Device Package: TO-3 (TO-204AA) Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 90 V Power - Max: 140 W Grade: Military Qualification: MIL-PRF-19500/439 |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
JANTX2N5038 | Microchip Technology |
Description: TRANS NPN 90V 20A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 1.2A, 12A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 5V Supplier Device Package: TO-3 (TO-204AA) Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 90 V Power - Max: 140 W Grade: Military Qualification: MIL-PRF-19500/439 |
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В кошику од. на суму грн. |
|
|
JANTXV2N5038 | Microchip Technology |
Description: TRANS NPN 90V 20A TO-3 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 1.2A, 12A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 5V Supplier Device Package: TO-3 Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 90 V Power - Max: 140 W Grade: Military Qualification: MIL-PRF-19500/439 |
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В кошику од. на суму грн. |
| JANTX2N5039 | Microchip Technology |
Description: TRANS NPN 75V 20A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 10A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 5V Supplier Device Package: TO-3 (TO-204AA) Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 75 V Power - Max: 140 W |
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В кошику од. на суму грн. | |
| JAN2N5302 | Microchip Technology |
Description: TRANS NPN 60V 30A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V Supplier Device Package: TO-3 (TO-204AA) Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 5 W |
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В кошику од. на суму грн. | |
| JANTX2N5302 | Microchip Technology | Description: TRANS NPN 60V 30A TO-3 |
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В кошику од. на суму грн. | |
| JANS2N5415 | Microchip Technology |
Description: TRANS PNP 200V 1A TO-5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: TO-5 Grade: Military Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 750 mW Qualification: MIL-PRF-19500/485 |
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В кошику од. на суму грн. | |
| JANS2N5415UA | Microchip Technology | Description: TRANS PNP 200V 1A TO-5 |
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В кошику од. на суму грн. | |
| JANS2N5416 | Microchip Technology |
Description: TRANS PNP 300V 1A TO-39 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
JANS2N5416U4 | Microchip Technology |
Description: TRANS PNP 300V 1A U4 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: U4 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 1 W Grade: Military Qualification: MIL-PRF-19500/485 |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
JANTX2N5416U4 | Microchip Technology |
Description: TRANS PNP 300V 1A U4 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: U4 Grade: Military Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 1 W Qualification: MIL-PRF-19500/485 |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
JANTXV2N5416U4 | Microchip Technology |
Description: TRANS PNP 300V 1A U4 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: U4 Grade: Military Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 1 W Qualification: MIL-PRF-19500/485 |
товару немає в наявності |
В кошику од. на суму грн. |
| JAN2N5416UA | Microchip Technology |
Description: TRANS PNP 300V 1A TO-5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: TO-5 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 750 mW Grade: Military Qualification: MIL-PRF-19500/485 |
товару немає в наявності |
В кошику од. на суму грн. | |
| JANS2N5416UA | Microchip Technology |
Description: TRANS PNP 300V 1A UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: UA Grade: Military Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 750 mW Qualification: MIL-PRF-19500/485 |
товару немає в наявності |
В кошику од. на суму грн. | |
| JANTX2N5416UA | Microchip Technology |
Description: TRANS PNP 300V 1A UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 750 mW Grade: Military Qualification: MIL-PRF-19500/485 |
товару немає в наявності |
В кошику од. на суму грн. | |
| JANTXV2N5416UA | Microchip Technology |
Description: TRANS PNP 300V 1A UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: UA Grade: Military Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 750 mW Qualification: MIL-PRF-19500/485 |
товару немає в наявності |
В кошику од. на суму грн. | |
| JAN2N5663 | Microchip Technology |
Description: TRANS NPN 300V 2A TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 400mA, 2A Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 5V Supplier Device Package: TO-5 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | |
| JANTXV2N5663 | Microchip Technology |
Description: TRANS NPN 300V 2A TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 400mA, 2A Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 5V Supplier Device Package: TO-5 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | |
| JANTXV2N5666U3 | Microchip Technology | Description: TRANS NPN 200V 5A U3 |
товару немає в наявності |
В кошику од. на суму грн. | |
| JAN2N5671 | Microchip Technology |
Description: TRANS NPN 90V 30A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 5V @ 6A, 30A Current - Collector Cutoff (Max): 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20A, 5V Supplier Device Package: TO-3 Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 90 V Power - Max: 6 W |
товару немає в наявності |
В кошику од. на суму грн. |
| JAN1N937BUR-1 |
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-35
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Qualification: MIL-PRF-19500/156
Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-35
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Qualification: MIL-PRF-19500/156
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N937BUR-1 |
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-35
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Qualification: MIL-PRF-19500/156
Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-35
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Qualification: MIL-PRF-19500/156
товару немає в наявності
В кошику
од. на суму грн.
| JAN1N938B-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Grade: Military
Qualification: MIL-PRF-19500/156
Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Grade: Military
Qualification: MIL-PRF-19500/156
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В кошику
од. на суму грн.
| JANS1N938B-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Grade: Military
Qualification: MIL-PRF-19500/156
Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Grade: Military
Qualification: MIL-PRF-19500/156
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N938B-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Grade: Military
Qualification: MIL-PRF-19500/156
Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Grade: Military
Qualification: MIL-PRF-19500/156
товару немає в наявності
В кошику
од. на суму грн.
| JANS1N938BUR-1 |
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Grade: Military
Qualification: MIL-PRF-19500/156
Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Grade: Military
Qualification: MIL-PRF-19500/156
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N938BUR-1 |
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Grade: Military
Qualification: MIL-PRF-19500/156
Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Grade: Military
Qualification: MIL-PRF-19500/156
товару немає в наявності
В кошику
од. на суму грн.
| JAN2N1613 |
|
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/181
Description: TRANS NPN 30V 0.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/181
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В кошику
од. на суму грн.
| JAN2N1711 |
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.5A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/225
Description: TRANS NPN 30V 0.5A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/225
товару немає в наявності
В кошику
од. на суму грн.
| JANTX2N1711 |
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.5A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/225
Description: TRANS NPN 30V 0.5A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/225
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| JANTX2N2369AU |
|
Виробник: Microchip Technology
Description: TRANS NPN 15V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: U1 (SMD-1)
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/317
Description: TRANS NPN 15V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: U1 (SMD-1)
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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| JAN2N2432 |
|
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/313
Description: TRANS NPN 30V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/313
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| JANTX2N2432 |
|
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 0.15mV @ 500µA, 10V
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Grade: Military
Qualification: MIL-PRF-19500/313
Description: TRANS NPN 30V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 0.15mV @ 500µA, 10V
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Grade: Military
Qualification: MIL-PRF-19500/313
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| JAN2N2432A |
|
Виробник: Microchip Technology
Description: TRANS NPN 45V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/313
Description: TRANS NPN 45V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/313
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| JANTX2N2432A |
|
Виробник: Microchip Technology
Description: TRANS NPN 45V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 0.15mV @ 500µA, 10V
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Military
Qualification: MIL-PRF-19500/313
Description: TRANS NPN 45V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 0.15mV @ 500µA, 10V
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Military
Qualification: MIL-PRF-19500/313
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| JAN2N3250A |
|
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/323
Description: TRANS PNP 60V 0.2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/323
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| JANTX2N3250A |
|
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/323
Description: TRANS PNP 60V 0.2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/323
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| JANS2N3439 |
|
Виробник: Microchip Technology
Description: TRANS NPN 350V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 350V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
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| JANS2N3439UA |
|
Виробник: Microchip Technology
Description: TRANS NPN 350V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 350V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
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| JANTXV2N3439UA |
|
Виробник: Microchip Technology
Description: TRANS NPN 350V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 350V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
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| JANS2N3440 |
|
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 250V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
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| JANS2N3440UA |
|
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 250V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
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| JANTX2N3440UA |
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 250V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
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| JAN2N3441 |
|
Виробник: Microchip Technology
Description: TRANS NPN 140V 3A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 4V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 3 W
Grade: Military
Qualification: MIL-PRF-19500/369
Description: TRANS NPN 140V 3A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 4V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 3 W
Grade: Military
Qualification: MIL-PRF-19500/369
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| JANTX2N3441 |
Виробник: Microchip Technology
Description: TRANS NPN 140V 3A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 4V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 3 W
Grade: Military
Qualification: MIL-PRF-19500/369
Description: TRANS NPN 140V 3A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 4V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 3 W
Grade: Military
Qualification: MIL-PRF-19500/369
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| JAN2N3442 |
|
Виробник: Microchip Technology
Description: TRANS NPN 140V 10A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 6 W
Grade: Military
Qualification: MIL-PRF-19500/370
Description: TRANS NPN 140V 10A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 6 W
Grade: Military
Qualification: MIL-PRF-19500/370
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| JANTXV2N3442 |
|
Виробник: Microchip Technology
Description: TRANS NPN 140V 10A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 6 W
Grade: Military
Qualification: MIL-PRF-19500/370
Description: TRANS NPN 140V 10A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 6 W
Grade: Military
Qualification: MIL-PRF-19500/370
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| JAN2N3584 |
Виробник: Microchip Technology
Description: TRANS NPN 250V 2A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 2.5 W
Grade: Military
Qualification: MIL-PRF-19500/384
Description: TRANS NPN 250V 2A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 2.5 W
Grade: Military
Qualification: MIL-PRF-19500/384
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| JANTX2N3584 |
Виробник: Microchip Technology
Description: TRANS NPN 250V 2A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 2.5 W
Grade: Military
Qualification: MIL-PRF-19500/384
Description: TRANS NPN 250V 2A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 2.5 W
Grade: Military
Qualification: MIL-PRF-19500/384
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| JANS2N3634UB |
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A TO-3
Description: TRANS PNP 140V 1A TO-3
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| JANS2N3637UB |
|
Виробник: Microchip Technology
Description: TRANS PNP 175V 1A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
Description: TRANS PNP 175V 1A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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| JANTX2N3771 |
|
Виробник: Microchip Technology
Description: TRANS NPN 40V 30A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 6A, 30A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 6 W
Grade: Military
Qualification: MIL-PRF-19500/518
Description: TRANS NPN 40V 30A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 6A, 30A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 6 W
Grade: Military
Qualification: MIL-PRF-19500/518
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| JAN2N3772 |
Виробник: Microchip Technology
Description: TRANS NPN 60V 20A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 4A, 20A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 6 W
Grade: Military
Qualification: MIL-PRF-19500/518
Description: TRANS NPN 60V 20A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 4A, 20A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 6 W
Grade: Military
Qualification: MIL-PRF-19500/518
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| JAN2N4399 |
Виробник: Microchip Technology
Description: TRANS PNP 60V 30A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 1A, 10A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
Qualification: MIL-PRF-19500/433
Description: TRANS PNP 60V 30A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 1A, 10A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
Qualification: MIL-PRF-19500/433
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| JANTX2N4399 |
Виробник: Microchip Technology
Description: TRANS PNP 60V 30A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 1A, 10A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
Qualification: MIL-PRF-19500/433
Description: TRANS PNP 60V 30A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 1A, 10A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
Qualification: MIL-PRF-19500/433
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| JANTX2N4854U |
Виробник: Microchip Technology
Description: TRANS NPN/PNP 40V 0.6A 6SMD
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 600mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Part Status: Active
Description: TRANS NPN/PNP 40V 0.6A 6SMD
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 600mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Part Status: Active
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| JAN2N5038 |
Виробник: Microchip Technology
Description: TRANS NPN 90V 20A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1.2A, 12A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 5V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 140 W
Grade: Military
Qualification: MIL-PRF-19500/439
Description: TRANS NPN 90V 20A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1.2A, 12A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 5V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 140 W
Grade: Military
Qualification: MIL-PRF-19500/439
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| JANTX2N5038 |
Виробник: Microchip Technology
Description: TRANS NPN 90V 20A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1.2A, 12A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 5V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 140 W
Grade: Military
Qualification: MIL-PRF-19500/439
Description: TRANS NPN 90V 20A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1.2A, 12A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 5V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 140 W
Grade: Military
Qualification: MIL-PRF-19500/439
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| JANTXV2N5038 |
Виробник: Microchip Technology
Description: TRANS NPN 90V 20A TO-3
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1.2A, 12A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 5V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 140 W
Grade: Military
Qualification: MIL-PRF-19500/439
Description: TRANS NPN 90V 20A TO-3
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1.2A, 12A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 5V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 140 W
Grade: Military
Qualification: MIL-PRF-19500/439
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| JANTX2N5039 |
Виробник: Microchip Technology
Description: TRANS NPN 75V 20A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 10A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 5V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 140 W
Description: TRANS NPN 75V 20A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 10A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 5V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 140 W
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| JAN2N5302 |
Виробник: Microchip Technology
Description: TRANS NPN 60V 30A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
Description: TRANS NPN 60V 30A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
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| JANTX2N5302 |
Виробник: Microchip Technology
Description: TRANS NPN 60V 30A TO-3
Description: TRANS NPN 60V 30A TO-3
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| JANS2N5415 |
|
Виробник: Microchip Technology
Description: TRANS PNP 200V 1A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
Qualification: MIL-PRF-19500/485
Description: TRANS PNP 200V 1A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
Qualification: MIL-PRF-19500/485
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| JANS2N5415UA |
Виробник: Microchip Technology
Description: TRANS PNP 200V 1A TO-5
Description: TRANS PNP 200V 1A TO-5
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| JANS2N5416U4 |
|
Виробник: Microchip Technology
Description: TRANS PNP 300V 1A U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: U4
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/485
Description: TRANS PNP 300V 1A U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: U4
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/485
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| JANTX2N5416U4 |
|
Виробник: Microchip Technology
Description: TRANS PNP 300V 1A U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: U4
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/485
Description: TRANS PNP 300V 1A U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: U4
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/485
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| JANTXV2N5416U4 |
|
Виробник: Microchip Technology
Description: TRANS PNP 300V 1A U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: U4
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/485
Description: TRANS PNP 300V 1A U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: U4
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/485
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од. на суму грн.
| JAN2N5416UA |
|
Виробник: Microchip Technology
Description: TRANS PNP 300V 1A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Grade: Military
Qualification: MIL-PRF-19500/485
Description: TRANS PNP 300V 1A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Grade: Military
Qualification: MIL-PRF-19500/485
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| JANS2N5416UA |
|
Виробник: Microchip Technology
Description: TRANS PNP 300V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: UA
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Qualification: MIL-PRF-19500/485
Description: TRANS PNP 300V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: UA
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Qualification: MIL-PRF-19500/485
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В кошику
од. на суму грн.
| JANTX2N5416UA |
|
Виробник: Microchip Technology
Description: TRANS PNP 300V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Grade: Military
Qualification: MIL-PRF-19500/485
Description: TRANS PNP 300V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Grade: Military
Qualification: MIL-PRF-19500/485
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од. на суму грн.
| JANTXV2N5416UA |
|
Виробник: Microchip Technology
Description: TRANS PNP 300V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: UA
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Qualification: MIL-PRF-19500/485
Description: TRANS PNP 300V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: UA
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Qualification: MIL-PRF-19500/485
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| JAN2N5663 |
|
Виробник: Microchip Technology
Description: TRANS NPN 300V 2A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 400mA, 2A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 5V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Description: TRANS NPN 300V 2A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 400mA, 2A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 5V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
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| JANTXV2N5663 |
|
Виробник: Microchip Technology
Description: TRANS NPN 300V 2A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 400mA, 2A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 5V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Description: TRANS NPN 300V 2A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 400mA, 2A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 5V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
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| JANTXV2N5666U3 |
Виробник: Microchip Technology
Description: TRANS NPN 200V 5A U3
Description: TRANS NPN 200V 5A U3
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| JAN2N5671 |
Виробник: Microchip Technology
Description: TRANS NPN 90V 30A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 6A, 30A
Current - Collector Cutoff (Max): 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20A, 5V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 6 W
Description: TRANS NPN 90V 30A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 6A, 30A
Current - Collector Cutoff (Max): 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20A, 5V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 6 W
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од. на суму грн.