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JANTX1N3910A Microchip Technology 8957-lds-0144-pdf Description: DIODE GEN PURP 100V 50A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Qualification: MIL-PRF-19500/308
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JAN1N459 Microchip Technology 8832-lds-0023-datasheet Description: DIODE GEN PURP 200V 150MA DO35
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JAN1N5555 JAN1N5555 Microchip Technology 8920-lds-0094-datasheet Description: TVS DIODE 30.5VWM 47.5VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 30.5V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/500
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JANTX1N5555 JANTX1N5555 Microchip Technology 8920-lds-0094-datasheet Description: TVS DIODE 30.5VWM 47.5VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 30.5V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/500
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JANTXV1N5555 JANTXV1N5555 Microchip Technology 8920-lds-0094-datasheet Description: TVS DIODE 30.5VWM 47.5VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 30.5V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/500
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JANTXV1N5612 Microchip Technology 11569-lds-0241-datasheet Description: TVS DIODE 49V 78.5V G AXIAL
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JAN1N5649A JAN1N5649A Microchip Technology LDS-0096-REV3.pdf Description: TVS DIODE 40.2VWM 64.8VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/500
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JANTX1N5649A JANTX1N5649A Microchip Technology LDS-0096-REV3.pdf Description: TVS DIODE 40.2VWM 64.8VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/500
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JANTXV1N5649A Microchip Technology 8922-lds-0096-datasheet Description: TVS DIODE 40.2V 64.8V DO13
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JANTX1N5812 JANTX1N5812 Microchip Technology 8958-lds-0145-pdf Description: DIODE GEN PURP 50V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: MIL-PRF-19500/478
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JAN1N5814 Microchip Technology 8958-lds-0145-pdf Description: DIODE GEN PURP 100V 20A DO203AA
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JANTX1N5814 JANTX1N5814 Microchip Technology 8958-lds-0145-pdf Description: DIODE GEN PURP 100V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: MIL-PRF-19500/478
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JANTXV1N5814 JANTXV1N5814 Microchip Technology 8958-lds-0145-pdf Description: DIODE GEN PURP 100V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: MIL-PRF-19500/478
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JANTX1N5814R JANTX1N5814R Microchip Technology 8958-lds-0145-pdf Description: DIODE GEN PURP 100V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: MIL-PRF-19500/478
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JAN1N5816 JAN1N5816 Microchip Technology 8958-lds-0145-pdf Description: DIODE STANDARD 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/478
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JANS1N5816 JANS1N5816 Microchip Technology 8958-lds-0145-pdf Description: DIODE SCHOTTKY 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/478
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JANTX1N5816 JANTX1N5816 Microchip Technology 8958-lds-0145-pdf Description: DIODE STANDARD 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/478
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JAN1N5968 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 5.6V 5W E AXIAL
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JANS1N5968US Microchip Technology Description: DIODE ZENER 5.6V 5W E AXIAL
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JANS1N5969US Microchip Technology Description: DIODE ZENER 6.2V 5W E AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: E, Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 4.74 V
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JANTX1N5969US Microchip Technology Description: DIODE ZENER 6.2V 5W E AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: E, Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 4.74 V
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JAN1N6039A JAN1N6039A Microchip Technology 8923-lds-0097-datasheet Description: TVS DIODE 8.5VWM 14.5VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
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JANTX1N6039A JANTX1N6039A Microchip Technology 8923-lds-0097-datasheet Description: TVS DIODE 8.5VWM 14.5VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
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JAN1N6045A Microchip Technology 8923-lds-0097-datasheet Description: TVS DIODE 15VWM 25.2VC DO13
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JANTX1N6045A Microchip Technology 8923-lds-0097-datasheet Description: TVS DIODE 15VWM 25.2VC DO13
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JAN1N6053A JAN1N6053A Microchip Technology 8923-lds-0097-datasheet Description: TVS DIODE 33VWM 53.9VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
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JANTXV1N6053A JANTXV1N6053A Microchip Technology 1N6036A-1N6072A.pdf Description: TVS DIODE 33VWM 53.9VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
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JANTX1N6060A Microchip Technology 8923-lds-0097-datasheet Description: TVS DIODE 64VWM 103VC DO13
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JAN1N6061A JAN1N6061A Microchip Technology 8923-lds-0097-datasheet Description: TVS DIODE 70VWM 113VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
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JANTX1N6061A JANTX1N6061A Microchip Technology 8923-lds-0097-datasheet Description: TVS DIODE 70VWM 113VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
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JANTXV1N6063A JANTXV1N6063A Microchip Technology 1N6036A-1N6072A.pdf Description: TVS DIODE 82VWM 137VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 82V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
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JANTX1N6065A JANTX1N6065A Microchip Technology 1N6036A-1N6072A.pdf Description: TVS DIODE 100VWM 168VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.9A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 114V
Voltage - Clamping (Max) @ Ipp: 168V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/507
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JANTX1N6068A JANTX1N6068A Microchip Technology 1N6036A-1N6072A.pdf Description: TVS DIODE 145VWM 245VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 245V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/507
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JAN1N6069A JAN1N6069A Microchip Technology 8923-lds-0097-datasheet Description: TVS DIODE 150VWM 261VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 261V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
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JANTX1N6069A JANTX1N6069A Microchip Technology 8923-lds-0097-datasheet Description: TVS DIODE 150VWM 261VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 261V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
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JANTX1N6072A JANTX1N6072A Microchip Technology 8923-lds-0097-datasheet Description: TVS DIODE 185VWM 328VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.6A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/507
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JANTXV1N6314US Microchip Technology Description: DIODE ZENER 3.9V 500MW MELF
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JANS1N6316US Microchip Technology Description: DIODE ZENER 4.7V 500MW MELF
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: B, SQ-MELF
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
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JANTX1N6316US JANTX1N6316US Microchip Technology Description: DIODE ZENER 4.7V 500MW SQ-MELF
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: B, SQ-MELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Grade: Military
Qualification: MIL-PRF-19500/533
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JANTXV1N6316US Microchip Technology Description: DIODE ZENER 4.7V 500MW MELF
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: B, SQ-MELF
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
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JAN1N6317US Microchip Technology Description: DIODE ZENER 5.1V 500MW DO35
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JANS1N6317US JANS1N6317US Microchip Technology 150_1N6309US%20thru%201N6355DUS.pdf Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: B, SQ-MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/533
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термін постачання 21-31 дні (днів)
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JANTX1N6317US JANTX1N6317US Microchip Technology 150_1N6309US%20thru%201N6355DUS.pdf Description: DIODE ZENER 5.1V 500MW SQ-MELF
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: MIL-PRF-19500/533
на замовлення 119 шт:
термін постачання 21-31 дні (днів)
1+1463.41 грн
100+1308.44 грн
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JANTXV1N6318 Microchip Technology 10924-lds-0193-datasheet Description: DIODE ZENER 5.6V 500MW DO35
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JANTXV1N6318US JANTXV1N6318US Microchip Technology Description: DIODE ZENER 5.6V 500MW SQ-MELF
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 2.5 V
Qualification: MIL-PRF-19500/533
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JANTX1N6319US Microchip Technology Description: DIODE ZENER 6.2V 500MW MELF
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JANTXV1N6319US Microchip Technology Description: DIODE ZENER 6.2V 500MW MELF
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JANTX1N6320 JANTX1N6320 Microchip Technology 10924-lds-0193-datasheet Description: DIODE ZENER 6.8V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Qualification: MIL-PRF-19500/533
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JANTX1N6320US Microchip Technology Description: DIODE ZENER 6.8V 500MW MELF
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JANTX1N6490 Microchip Technology 122691-lds-0183-datasheet Description: DIODE ZENER 5.1V 1.5W D5A
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JANTX1N6661 JANTX1N6661 Microchip Technology 11106-sd87a-datasheet Description: DIODE GEN PURP 225V 500MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 50 nA @ 225 V
Grade: Military
Qualification: MIL-PRF-19500/587
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JANTXV1N6661US JANTXV1N6661US Microchip Technology 11107-sd88a-datasheet Description: DIODE GEN PURP 225V 500MA D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 50 nA @ 225 V
Qualification: MIL-PRF-19500/587
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JAN1N937B-1 JAN1N937B-1 Microchip Technology 5912-1n935-938b-datasheet Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Grade: Military
Qualification: MIL-PRF-19500/156
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JAN1N937BUR-1 JAN1N937BUR-1 Microchip Technology Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-35
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Qualification: MIL-PRF-19500/156
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JANTX1N937BUR-1 JANTX1N937BUR-1 Microchip Technology Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-35
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Qualification: MIL-PRF-19500/156
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JAN1N938B-1 JAN1N938B-1 Microchip Technology 5912-1n935-938b-datasheet Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Grade: Military
Qualification: MIL-PRF-19500/156
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JANS1N938B-1 JANS1N938B-1 Microchip Technology 5912-1n935-938b-datasheet Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Grade: Military
Qualification: MIL-PRF-19500/156
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JANTX1N938B-1 JANTX1N938B-1 Microchip Technology 5912-1n935-938b-datasheet Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Grade: Military
Qualification: MIL-PRF-19500/156
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JANS1N938BUR-1 JANS1N938BUR-1 Microchip Technology Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Grade: Military
Qualification: MIL-PRF-19500/156
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JANTX1N938BUR-1 JANTX1N938BUR-1 Microchip Technology Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Grade: Military
Qualification: MIL-PRF-19500/156
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JANTX1N3910A 8957-lds-0144-pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 50A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Qualification: MIL-PRF-19500/308
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JAN1N459 8832-lds-0023-datasheet
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 150MA DO35
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JAN1N5555 8920-lds-0094-datasheet
JAN1N5555
Виробник: Microchip Technology
Description: TVS DIODE 30.5VWM 47.5VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 30.5V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/500
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JANTX1N5555 8920-lds-0094-datasheet
JANTX1N5555
Виробник: Microchip Technology
Description: TVS DIODE 30.5VWM 47.5VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 30.5V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/500
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4161.63 грн
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JANTXV1N5555 8920-lds-0094-datasheet
JANTXV1N5555
Виробник: Microchip Technology
Description: TVS DIODE 30.5VWM 47.5VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 30.5V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/500
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JANTXV1N5612 11569-lds-0241-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 49V 78.5V G AXIAL
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JAN1N5649A LDS-0096-REV3.pdf
JAN1N5649A
Виробник: Microchip Technology
Description: TVS DIODE 40.2VWM 64.8VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/500
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JANTX1N5649A LDS-0096-REV3.pdf
JANTX1N5649A
Виробник: Microchip Technology
Description: TVS DIODE 40.2VWM 64.8VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/500
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JANTXV1N5649A 8922-lds-0096-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 40.2V 64.8V DO13
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JANTX1N5812 8958-lds-0145-pdf
JANTX1N5812
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: MIL-PRF-19500/478
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JAN1N5814 8958-lds-0145-pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 20A DO203AA
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JANTX1N5814 8958-lds-0145-pdf
JANTX1N5814
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: MIL-PRF-19500/478
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JANTXV1N5814 8958-lds-0145-pdf
JANTXV1N5814
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: MIL-PRF-19500/478
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JANTX1N5814R 8958-lds-0145-pdf
JANTX1N5814R
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: MIL-PRF-19500/478
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JAN1N5816 8958-lds-0145-pdf
JAN1N5816
Виробник: Microchip Technology
Description: DIODE STANDARD 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/478
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JANS1N5816 8958-lds-0145-pdf
JANS1N5816
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/478
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JANTX1N5816 8958-lds-0145-pdf
JANTX1N5816
Виробник: Microchip Technology
Description: DIODE STANDARD 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/478
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JAN1N5968 10913-sa5-37-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER 5.6V 5W E AXIAL
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JANS1N5968US
Виробник: Microchip Technology
Description: DIODE ZENER 5.6V 5W E AXIAL
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JANS1N5969US
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 5W E AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: E, Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 4.74 V
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JANTX1N5969US
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 5W E AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: E, Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 4.74 V
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JAN1N6039A 8923-lds-0097-datasheet
JAN1N6039A
Виробник: Microchip Technology
Description: TVS DIODE 8.5VWM 14.5VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
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JANTX1N6039A 8923-lds-0097-datasheet
JANTX1N6039A
Виробник: Microchip Technology
Description: TVS DIODE 8.5VWM 14.5VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
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JAN1N6045A 8923-lds-0097-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 15VWM 25.2VC DO13
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JANTX1N6045A 8923-lds-0097-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 15VWM 25.2VC DO13
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JAN1N6053A 8923-lds-0097-datasheet
JAN1N6053A
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.9VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
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JANTXV1N6053A 1N6036A-1N6072A.pdf
JANTXV1N6053A
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.9VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
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JANTX1N6060A 8923-lds-0097-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 64VWM 103VC DO13
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JAN1N6061A 8923-lds-0097-datasheet
JAN1N6061A
Виробник: Microchip Technology
Description: TVS DIODE 70VWM 113VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
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JANTX1N6061A 8923-lds-0097-datasheet
JANTX1N6061A
Виробник: Microchip Technology
Description: TVS DIODE 70VWM 113VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
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JANTXV1N6063A 1N6036A-1N6072A.pdf
JANTXV1N6063A
Виробник: Microchip Technology
Description: TVS DIODE 82VWM 137VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 82V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
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JANTX1N6065A 1N6036A-1N6072A.pdf
JANTX1N6065A
Виробник: Microchip Technology
Description: TVS DIODE 100VWM 168VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.9A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 114V
Voltage - Clamping (Max) @ Ipp: 168V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/507
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JANTX1N6068A 1N6036A-1N6072A.pdf
JANTX1N6068A
Виробник: Microchip Technology
Description: TVS DIODE 145VWM 245VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 245V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/507
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JAN1N6069A 8923-lds-0097-datasheet
JAN1N6069A
Виробник: Microchip Technology
Description: TVS DIODE 150VWM 261VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 261V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
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JANTX1N6069A 8923-lds-0097-datasheet
JANTX1N6069A
Виробник: Microchip Technology
Description: TVS DIODE 150VWM 261VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 261V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
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JANTX1N6072A 8923-lds-0097-datasheet
JANTX1N6072A
Виробник: Microchip Technology
Description: TVS DIODE 185VWM 328VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.6A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/507
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JANTXV1N6314US
Виробник: Microchip Technology
Description: DIODE ZENER 3.9V 500MW MELF
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JANS1N6316US
Виробник: Microchip Technology
Description: DIODE ZENER 4.7V 500MW MELF
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: B, SQ-MELF
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
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JANTX1N6316US
JANTX1N6316US
Виробник: Microchip Technology
Description: DIODE ZENER 4.7V 500MW SQ-MELF
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: B, SQ-MELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Grade: Military
Qualification: MIL-PRF-19500/533
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JANTXV1N6316US
Виробник: Microchip Technology
Description: DIODE ZENER 4.7V 500MW MELF
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: B, SQ-MELF
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
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JAN1N6317US
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 500MW DO35
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JANS1N6317US 150_1N6309US%20thru%201N6355DUS.pdf
JANS1N6317US
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: B, SQ-MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/533
на замовлення 65 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9504.13 грн
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JANTX1N6317US 150_1N6309US%20thru%201N6355DUS.pdf
JANTX1N6317US
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 500MW SQ-MELF
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: MIL-PRF-19500/533
на замовлення 119 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1463.41 грн
100+1308.44 грн
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JANTXV1N6318 10924-lds-0193-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER 5.6V 500MW DO35
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JANTXV1N6318US
JANTXV1N6318US
Виробник: Microchip Technology
Description: DIODE ZENER 5.6V 500MW SQ-MELF
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 2.5 V
Qualification: MIL-PRF-19500/533
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JANTX1N6319US
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW MELF
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JANTXV1N6319US
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW MELF
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JANTX1N6320 10924-lds-0193-datasheet
JANTX1N6320
Виробник: Microchip Technology
Description: DIODE ZENER 6.8V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Qualification: MIL-PRF-19500/533
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JANTX1N6320US
Виробник: Microchip Technology
Description: DIODE ZENER 6.8V 500MW MELF
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JANTX1N6490 122691-lds-0183-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 1.5W D5A
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JANTX1N6661 11106-sd87a-datasheet
JANTX1N6661
Виробник: Microchip Technology
Description: DIODE GEN PURP 225V 500MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 50 nA @ 225 V
Grade: Military
Qualification: MIL-PRF-19500/587
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JANTXV1N6661US 11107-sd88a-datasheet
JANTXV1N6661US
Виробник: Microchip Technology
Description: DIODE GEN PURP 225V 500MA D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 50 nA @ 225 V
Qualification: MIL-PRF-19500/587
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JAN1N937B-1 5912-1n935-938b-datasheet
JAN1N937B-1
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Grade: Military
Qualification: MIL-PRF-19500/156
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JAN1N937BUR-1
JAN1N937BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-35
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Qualification: MIL-PRF-19500/156
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JANTX1N937BUR-1
JANTX1N937BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-35
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Qualification: MIL-PRF-19500/156
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JAN1N938B-1 5912-1n935-938b-datasheet
JAN1N938B-1
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Grade: Military
Qualification: MIL-PRF-19500/156
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JANS1N938B-1 5912-1n935-938b-datasheet
JANS1N938B-1
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Grade: Military
Qualification: MIL-PRF-19500/156
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JANTX1N938B-1 5912-1n935-938b-datasheet
JANTX1N938B-1
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Grade: Military
Qualification: MIL-PRF-19500/156
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JANS1N938BUR-1
JANS1N938BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Grade: Military
Qualification: MIL-PRF-19500/156
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JANTX1N938BUR-1
JANTX1N938BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Grade: Military
Qualification: MIL-PRF-19500/156
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