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HT-MM900AC-6K-EE-30M0000000 Microchip Technology Description: HT-MM900AC-6K-EE-30M0000000
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: TCXO
Operating Temperature: -55°C ~ 125°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 5mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.031" (0.80mm)
Frequency: 30 MHz
Base Resonator: Crystal
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HT-MM900AC-2K-EE-30M0000000 Microchip Technology HTMM900A.pdf Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Packaging: Tape & Reel (TR)
Supplier Device Package: 4-VDFN (3.2x2.5)
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HT-MM900AC-6E-EE-30M0000000 Microchip Technology HT-MM900A.pdf Description: HIGH TEMP MEMS BASED XO +3.3 VDC
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MO-9000AE-7F-EE-30M0000000 Microchip Technology Description: MEMS BASED XO +3.3 VDC -40C TO +
Packaging: Tape & Reel (TR)
Supplier Device Package: 4-VDFN (3.2x2.5)
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HT-MM900AF-7K-EE-30M0000000 Microchip Technology Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Packaging: Tape & Reel (TR)
Supplier Device Package: 4-VDFN (3.2x2.5)
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HT-MM900AC-4K-EE-30M0000000 Microchip Technology Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Packaging: Tape & Reel (TR)
Supplier Device Package: 4-VDFN (3.2x2.5)
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HT-MM900AE-7F-EE-30M0000000 Microchip Technology HT-MM900A.pdf Description: HIGH TEMP MEMS BASED XO +3.3 VDC
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HT-MM900A7-2K-EE-30M0000000 Microchip Technology Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Packaging: Tape & Reel (TR)
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VV-701-EAE-PNEE-30M0000000 Microchip Technology VV-701.pdf Description: LOW FREQUENCY CERAMIC VCXO +3.3
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HT-MM900AE-4K-EE-30M0000000 Microchip Technology HT-MM900A.pdf Description: HIGH TEMP MEMS BASED XO +3.3 VDC
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DSC6001CE1A-027.1780 DSC6001CE1A-027.1780 Microchip Technology DSC60XX-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20005625C.pdf Description: MEMS OSC XO 27.1780MHZ CMOS SMD
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DSC6111CE1A-027.2250T Microchip Technology 20005624B.pdf Description: MEMS OSC XO 27.2250MHZ CMOS SMD
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DSC6101JI1A-027.0000 DSC6101JI1A-027.0000 Microchip Technology 20005624B.pdf Description: MEMS OSC LVCMOS 50PPM 2.5X2.0MM
Packaging: Tube
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 27 MHz
Base Resonator: MEMS
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DSC6101JI1A-027.0000T DSC6101JI1A-027.0000T Microchip Technology 20005624B.pdf Description: MEMS OSC LVCMOS 50PPM 2.5X2.0MM
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DSC6111CE1A-027.2250 Microchip Technology 20005624B.pdf Description: MEMS OSC XO 27.2250MHZ CMOS SMD
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DSC6001CE1A-027.1780T DSC6001CE1A-027.1780T Microchip Technology DSC60XX-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20005625C.pdf Description: MEMS OSC XO 27.1780MHZ CMOS SMD
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1N458 1N458 Microchip Technology 1N457A-1N459A.pdf Description: DIODE STD 150V 150MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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1N4589R Microchip Technology S,R43.pdf Description: DIODE GP REV 300V 150A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 50 µA @ 300 V
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1N458/TR 1N458/TR Microchip Technology 1N4565-1N4585A-1.pdf Description: DIODE STD REV 150V 150MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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1N4588RD Microchip Technology S,R43.pdf Description: DIODE GP REV 200V 150A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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1N4588D Microchip Technology S,R43.pdf Description: DIODE GEN PURP 200V 150A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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JANTXV1N4580AUR-1/TR JANTXV1N4580AUR-1/TR Microchip Technology Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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JAN1N4583AUR-1/TR JAN1N4583AUR-1/TR Microchip Technology Description: DIODE ZENER TEMP COMPENSATED
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JANS1N4583A-1 Microchip Technology Description: ZENER DIODE
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JANS1N4581A-1 JANS1N4581A-1 Microchip Technology Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TA)
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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JANTX1N4583AUR-1/TR JANTX1N4583AUR-1/TR Microchip Technology Description: DIODE ZENER TEMP COMPENSATED
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JANS1N4582AUR-1/TR JANS1N4582AUR-1/TR Microchip Technology Description: DIODE ZENER TEMP COMPENSATED
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JAN1N4581AUR-1/TR JAN1N4581AUR-1/TR Microchip Technology Description: DIODE ZENER TEMP COMPENSATED
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JAN1N4582AUR-1/TR JAN1N4582AUR-1/TR Microchip Technology Description: DIODE ZENER TEMP COMPENSATED
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LDTS24A LDTS24A Microchip Technology 150_LDTS14%20thru%20LDTS48A.pdf Description: TVS DIODE 24VWM 39VC TO3
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 77A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: TO-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.5V
Voltage - Clamping (Max) @ Ipp: 39V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
на замовлення 70 шт:
термін постачання 21-31 дні (днів)
1+2988.52 грн
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SMDB03Ce3/TR7 SMDB03Ce3/TR7 Microchip Technology SMDA.pdf Description: TVS DIODE 3.3VWM 9VC 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 300pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 300W
Power Line Protection: No
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SMDB03Ce3/TR7 SMDB03Ce3/TR7 Microchip Technology SMDA.pdf Description: TVS DIODE 3.3VWM 9VC 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 300pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 300W
Power Line Protection: No
на замовлення 448 шт:
термін постачання 21-31 дні (днів)
3+144.33 грн
Мінімальне замовлення: 3
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SMDA03-6E3/TR7 SMDA03-6E3/TR7 Microchip Technology SMDA03-24-6.pdf Description: TVS DIODE 3.3VWM 9VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 800pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 6
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 300W
Power Line Protection: No
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
500+82.91 грн
Мінімальне замовлення: 500
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SMDA03-6E3/TR7 SMDA03-6E3/TR7 Microchip Technology SMDA03-24-6.pdf Description: TVS DIODE 3.3VWM 9VC 8-SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 800pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 6
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 300W
Power Line Protection: No
на замовлення 1549 шт:
термін постачання 21-31 дні (днів)
4+88.64 грн
100+79.83 грн
Мінімальне замовлення: 4
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AT24C01A-10TU-1.8-T AT24C01A-10TU-1.8-T Microchip Technology doc0180.pdf Description: IC EEPROM 1KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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AT24C01A-10SC-2.7 AT24C01A-10SC-2.7 Microchip Technology AT24C01A%2C02%2C04%2C08%2C16%20%282001%29.pdf Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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AT24C01A-10SI-2.5 AT24C01A-10SI-2.5 Microchip Technology AT24C01A%2C02%2C04%2C08%2C16%20%282001%29.pdf Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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AT24C01A-10SC-1.8 AT24C01A-10SC-1.8 Microchip Technology AT24C01A%2C02%2C04%2C08%2C16%20%282001%29.pdf Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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AT24C01A-10SC-2.5 AT24C01A-10SC-2.5 Microchip Technology AT24C01A%2C02%2C04%2C08%2C16%20%282001%29.pdf Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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AT24C01A-10PC-1.8 AT24C01A-10PC-1.8 Microchip Technology AT24C01A%2C02%2C04%2C08%2C16%20%282001%29.pdf Description: IC EEPROM 1KBIT I2C 400KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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AT24C01A-10SC AT24C01A-10SC Microchip Technology AT24C01A%2C02%2C04%2C08%2C16%20%282001%29.pdf Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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AT24C01A-10PI-2.5 AT24C01A-10PI-2.5 Microchip Technology AT24C01A%2C02%2C04%2C08%2C16%20%282001%29.pdf Description: IC EEPROM 1KBIT I2C 400KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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AT24C01A-10PC-2.7 AT24C01A-10PC-2.7 Microchip Technology AT24C01A%2C02%2C04%2C08%2C16%20%282001%29.pdf Description: IC EEPROM 1KBIT I2C 400KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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AT24C01A-10SI AT24C01A-10SI Microchip Technology AT24C01A%2C02%2C04%2C08%2C16%20%282001%29.pdf Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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MXSMLG7.0A Microchip Technology 10563-msml-datasheet Description: TVS DIODE 7VWM 12VC SMLG
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1N5307UR-1 1N5307UR-1 Microchip Technology 1N5283UR-1_1N5314UR-1.pdf Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
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JANTXV1N5307UR-1/TR JANTXV1N5307UR-1/TR Microchip Technology 1N5283UR-1_1N5314UR-1.pdf Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
Qualification: MIL-PRF-19500/463
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JANTX1N5307UR-1/TR JANTX1N5307UR-1/TR Microchip Technology 1N5283UR-1_1N5314UR-1.pdf Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
Qualification: MIL-PRF-19500/463
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JAN1N5307UR-1/TR JAN1N5307UR-1/TR Microchip Technology 1N5283UR-1_1N5314UR-1.pdf Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
Qualification: MIL-PRF-19500/463
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1N5307UR-1/TR 1N5307UR-1/TR Microchip Technology 1N5283UR-1_1N5314UR-1.pdf Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
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JANS1N5307UR-1 JANS1N5307UR-1 Microchip Technology 1N5283UR-1_1N5314UR-1.pdf Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
Qualification: MIL-PRF-19500/463
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JANS1N5307UR-1/TR JANS1N5307UR-1/TR Microchip Technology 1N5283UR-1_1N5314UR-1.pdf Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
Qualification: MIL-PRF-19500/463
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MQ2N5115UB/TR MQ2N5115UB/TR Microchip Technology 123965-lds-0006-1.pdf Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V
Qualification: MIL-PRF-19500
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MX2N5114UB/TR MX2N5114UB/TR Microchip Technology 123965-lds-0006-1.pdf Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 18 V
Qualification: MIL-PRF-19500
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MV2N5115UB/TR MV2N5115UB/TR Microchip Technology 123965-lds-0006-1.pdf Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V
Qualification: MIL-PRF-19500
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2N5116UA/TR 2N5116UA/TR Microchip Technology 124387-lds-0006.pdf Description: JFET P-CH 30V UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UA
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 175 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
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MQ2N5116UB MQ2N5116UB Microchip Technology 123965-lds-0006-1.pdf Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 175 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Qualification: MIL-PRF-19500
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MX2N5114UB MX2N5114UB Microchip Technology 123965-lds-0006-1.pdf Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 18 V
Qualification: MIL-PRF-19500
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MQ2N5115UB MQ2N5115UB Microchip Technology 123965-lds-0006-1.pdf Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V
Qualification: MIL-PRF-19500
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MQ2N5116UB/TR MQ2N5116UB/TR Microchip Technology 123965-lds-0006-1.pdf Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 175 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Qualification: MIL-PRF-19500
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HT-MM900AC-6K-EE-30M0000000
Виробник: Microchip Technology
Description: HT-MM900AC-6K-EE-30M0000000
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: TCXO
Operating Temperature: -55°C ~ 125°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 5mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.031" (0.80mm)
Frequency: 30 MHz
Base Resonator: Crystal
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HT-MM900AC-2K-EE-30M0000000 HTMM900A.pdf
Виробник: Microchip Technology
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Packaging: Tape & Reel (TR)
Supplier Device Package: 4-VDFN (3.2x2.5)
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HT-MM900AC-6E-EE-30M0000000 HT-MM900A.pdf
Виробник: Microchip Technology
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
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MO-9000AE-7F-EE-30M0000000
Виробник: Microchip Technology
Description: MEMS BASED XO +3.3 VDC -40C TO +
Packaging: Tape & Reel (TR)
Supplier Device Package: 4-VDFN (3.2x2.5)
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HT-MM900AF-7K-EE-30M0000000
Виробник: Microchip Technology
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Packaging: Tape & Reel (TR)
Supplier Device Package: 4-VDFN (3.2x2.5)
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HT-MM900AC-4K-EE-30M0000000
Виробник: Microchip Technology
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Packaging: Tape & Reel (TR)
Supplier Device Package: 4-VDFN (3.2x2.5)
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HT-MM900AE-7F-EE-30M0000000 HT-MM900A.pdf
Виробник: Microchip Technology
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
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HT-MM900A7-2K-EE-30M0000000
Виробник: Microchip Technology
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Packaging: Tape & Reel (TR)
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VV-701-EAE-PNEE-30M0000000 VV-701.pdf
Виробник: Microchip Technology
Description: LOW FREQUENCY CERAMIC VCXO +3.3
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HT-MM900AE-4K-EE-30M0000000 HT-MM900A.pdf
Виробник: Microchip Technology
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
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DSC6001CE1A-027.1780 DSC60XX-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20005625C.pdf
DSC6001CE1A-027.1780
Виробник: Microchip Technology
Description: MEMS OSC XO 27.1780MHZ CMOS SMD
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DSC6111CE1A-027.2250T 20005624B.pdf
Виробник: Microchip Technology
Description: MEMS OSC XO 27.2250MHZ CMOS SMD
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DSC6101JI1A-027.0000 20005624B.pdf
DSC6101JI1A-027.0000
Виробник: Microchip Technology
Description: MEMS OSC LVCMOS 50PPM 2.5X2.0MM
Packaging: Tube
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 27 MHz
Base Resonator: MEMS
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DSC6101JI1A-027.0000T 20005624B.pdf
DSC6101JI1A-027.0000T
Виробник: Microchip Technology
Description: MEMS OSC LVCMOS 50PPM 2.5X2.0MM
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DSC6111CE1A-027.2250 20005624B.pdf
Виробник: Microchip Technology
Description: MEMS OSC XO 27.2250MHZ CMOS SMD
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DSC6001CE1A-027.1780T DSC60XX-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20005625C.pdf
DSC6001CE1A-027.1780T
Виробник: Microchip Technology
Description: MEMS OSC XO 27.1780MHZ CMOS SMD
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1N458 1N457A-1N459A.pdf
1N458
Виробник: Microchip Technology
Description: DIODE STD 150V 150MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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1N4589R S,R43.pdf
Виробник: Microchip Technology
Description: DIODE GP REV 300V 150A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 50 µA @ 300 V
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1N458/TR 1N4565-1N4585A-1.pdf
1N458/TR
Виробник: Microchip Technology
Description: DIODE STD REV 150V 150MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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1N4588RD S,R43.pdf
Виробник: Microchip Technology
Description: DIODE GP REV 200V 150A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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1N4588D S,R43.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 150A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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JANTXV1N4580AUR-1/TR
JANTXV1N4580AUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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JAN1N4583AUR-1/TR
JAN1N4583AUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
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JANS1N4583A-1
Виробник: Microchip Technology
Description: ZENER DIODE
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JANS1N4581A-1
JANS1N4581A-1
Виробник: Microchip Technology
Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TA)
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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JANTX1N4583AUR-1/TR
JANTX1N4583AUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
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JANS1N4582AUR-1/TR
JANS1N4582AUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
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JAN1N4581AUR-1/TR
JAN1N4581AUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
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JAN1N4582AUR-1/TR
JAN1N4582AUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
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LDTS24A 150_LDTS14%20thru%20LDTS48A.pdf
LDTS24A
Виробник: Microchip Technology
Description: TVS DIODE 24VWM 39VC TO3
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 77A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: TO-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.5V
Voltage - Clamping (Max) @ Ipp: 39V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
на замовлення 70 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2988.52 грн
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SMDB03Ce3/TR7 SMDA.pdf
SMDB03Ce3/TR7
Виробник: Microchip Technology
Description: TVS DIODE 3.3VWM 9VC 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 300pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 300W
Power Line Protection: No
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SMDB03Ce3/TR7 SMDA.pdf
SMDB03Ce3/TR7
Виробник: Microchip Technology
Description: TVS DIODE 3.3VWM 9VC 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 300pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 300W
Power Line Protection: No
на замовлення 448 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+144.33 грн
Мінімальне замовлення: 3
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SMDA03-6E3/TR7 SMDA03-24-6.pdf
SMDA03-6E3/TR7
Виробник: Microchip Technology
Description: TVS DIODE 3.3VWM 9VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 800pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 6
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 300W
Power Line Protection: No
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
500+82.91 грн
Мінімальне замовлення: 500
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SMDA03-6E3/TR7 SMDA03-24-6.pdf
SMDA03-6E3/TR7
Виробник: Microchip Technology
Description: TVS DIODE 3.3VWM 9VC 8-SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 800pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 6
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 300W
Power Line Protection: No
на замовлення 1549 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+88.64 грн
100+79.83 грн
Мінімальне замовлення: 4
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AT24C01A-10TU-1.8-T doc0180.pdf
AT24C01A-10TU-1.8-T
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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AT24C01A-10SC-2.7 AT24C01A%2C02%2C04%2C08%2C16%20%282001%29.pdf
AT24C01A-10SC-2.7
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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AT24C01A-10SI-2.5 AT24C01A%2C02%2C04%2C08%2C16%20%282001%29.pdf
AT24C01A-10SI-2.5
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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AT24C01A-10SC-1.8 AT24C01A%2C02%2C04%2C08%2C16%20%282001%29.pdf
AT24C01A-10SC-1.8
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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AT24C01A-10SC-2.5 AT24C01A%2C02%2C04%2C08%2C16%20%282001%29.pdf
AT24C01A-10SC-2.5
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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AT24C01A-10PC-1.8 AT24C01A%2C02%2C04%2C08%2C16%20%282001%29.pdf
AT24C01A-10PC-1.8
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 400KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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AT24C01A-10SC AT24C01A%2C02%2C04%2C08%2C16%20%282001%29.pdf
AT24C01A-10SC
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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AT24C01A-10PI-2.5 AT24C01A%2C02%2C04%2C08%2C16%20%282001%29.pdf
AT24C01A-10PI-2.5
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 400KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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AT24C01A-10PC-2.7 AT24C01A%2C02%2C04%2C08%2C16%20%282001%29.pdf
AT24C01A-10PC-2.7
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 400KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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AT24C01A-10SI AT24C01A%2C02%2C04%2C08%2C16%20%282001%29.pdf
AT24C01A-10SI
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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MXSMLG7.0A 10563-msml-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 7VWM 12VC SMLG
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1N5307UR-1 1N5283UR-1_1N5314UR-1.pdf
1N5307UR-1
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
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JANTXV1N5307UR-1/TR 1N5283UR-1_1N5314UR-1.pdf
JANTXV1N5307UR-1/TR
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
Qualification: MIL-PRF-19500/463
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JANTX1N5307UR-1/TR 1N5283UR-1_1N5314UR-1.pdf
JANTX1N5307UR-1/TR
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
Qualification: MIL-PRF-19500/463
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JAN1N5307UR-1/TR 1N5283UR-1_1N5314UR-1.pdf
JAN1N5307UR-1/TR
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
Qualification: MIL-PRF-19500/463
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1N5307UR-1/TR 1N5283UR-1_1N5314UR-1.pdf
1N5307UR-1/TR
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
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JANS1N5307UR-1 1N5283UR-1_1N5314UR-1.pdf
JANS1N5307UR-1
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
Qualification: MIL-PRF-19500/463
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JANS1N5307UR-1/TR 1N5283UR-1_1N5314UR-1.pdf
JANS1N5307UR-1/TR
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
Qualification: MIL-PRF-19500/463
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MQ2N5115UB/TR 123965-lds-0006-1.pdf
MQ2N5115UB/TR
Виробник: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V
Qualification: MIL-PRF-19500
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MX2N5114UB/TR 123965-lds-0006-1.pdf
MX2N5114UB/TR
Виробник: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 18 V
Qualification: MIL-PRF-19500
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MV2N5115UB/TR 123965-lds-0006-1.pdf
MV2N5115UB/TR
Виробник: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V
Qualification: MIL-PRF-19500
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2N5116UA/TR 124387-lds-0006.pdf
2N5116UA/TR
Виробник: Microchip Technology
Description: JFET P-CH 30V UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UA
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 175 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
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MQ2N5116UB 123965-lds-0006-1.pdf
MQ2N5116UB
Виробник: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 175 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Qualification: MIL-PRF-19500
товару немає в наявності
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MX2N5114UB 123965-lds-0006-1.pdf
MX2N5114UB
Виробник: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 18 V
Qualification: MIL-PRF-19500
товару немає в наявності
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MQ2N5115UB 123965-lds-0006-1.pdf
MQ2N5115UB
Виробник: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V
Qualification: MIL-PRF-19500
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MQ2N5116UB/TR 123965-lds-0006-1.pdf
MQ2N5116UB/TR
Виробник: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 175 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику  од. на суму  грн.
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