Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (354273) > Сторінка 1862 з 5905
Фото | Назва | Виробник | Інформація |
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MALCE80A | Microchip Technology |
Description: TVS DIODE 80VWM 129VC CASE-1 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 11.6A Voltage - Reverse Standoff (Typ): 80V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 88.7V Voltage - Clamping (Max) @ Ipp: 129V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MALCE80Ae3 | Microchip Technology |
Description: TVS DIODE 80VWM 129VC CASE-1 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 11.6A Voltage - Reverse Standoff (Typ): 80V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 88.7V Voltage - Clamping (Max) @ Ipp: 129V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MXLCE80A | Microchip Technology |
Description: TVS DIODE 80VWM 129VC CASE-1 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 11.6A Voltage - Reverse Standoff (Typ): 80V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 88.7V Voltage - Clamping (Max) @ Ipp: 129V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MXLCE80Ae3 | Microchip Technology |
Description: TVS DIODE 80VWM 129VC CASE-1 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 11.6A Voltage - Reverse Standoff (Typ): 80V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 88.7V Voltage - Clamping (Max) @ Ipp: 129V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MXLLCE80A | Microchip Technology |
Description: TVS DIODE 80VWM 129VC CASE-1 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 11.6A Voltage - Reverse Standoff (Typ): 80V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 88.7V Voltage - Clamping (Max) @ Ipp: 129V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MXLLCE80Ae3 | Microchip Technology |
Description: TVS DIODE 80VWM 129VC CASE-1 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 11.6A Voltage - Reverse Standoff (Typ): 80V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 88.7V Voltage - Clamping (Max) @ Ipp: 129V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MXLSMCGLCE80A | Microchip Technology |
Description: TVS DIODE 80VWM 129VC SMCG Packaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 11.6A Voltage - Reverse Standoff (Typ): 80V Supplier Device Package: DO-214AB (SMCG) Unidirectional Channels: 1 Voltage - Breakdown (Min): 88.7V Voltage - Clamping (Max) @ Ipp: 129V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MXLSMCGLCE80Ae3 | Microchip Technology |
Description: TVS DIODE 80VWM 129VC SMCG Packaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 11.6A Voltage - Reverse Standoff (Typ): 80V Supplier Device Package: DO-214AB (SMCG) Unidirectional Channels: 1 Voltage - Breakdown (Min): 88.7V Voltage - Clamping (Max) @ Ipp: 129V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MXSMCGLCE80A | Microchip Technology |
Description: TVS DIODE 80VWM 129VC SMCG Packaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 11.6A Voltage - Reverse Standoff (Typ): 80V Supplier Device Package: DO-214AB (SMCG) Unidirectional Channels: 1 Voltage - Breakdown (Min): 88.7V Voltage - Clamping (Max) @ Ipp: 129V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MXSMCGLCE80Ae3 | Microchip Technology |
Description: TVS DIODE 80VWM 129VC SMCG Packaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 11.6A Voltage - Reverse Standoff (Typ): 80V Supplier Device Package: DO-214AB (SMCG) Unidirectional Channels: 1 Voltage - Breakdown (Min): 88.7V Voltage - Clamping (Max) @ Ipp: 129V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MXSMCJLCE80A | Microchip Technology |
Description: TVS DIODE 80VWM 129VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 11.6A Voltage - Reverse Standoff (Typ): 80V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 88.7V Voltage - Clamping (Max) @ Ipp: 129V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MXSMCJLCE80Ae3 | Microchip Technology |
Description: TVS DIODE 80VWM 129VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 11.6A Voltage - Reverse Standoff (Typ): 80V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 88.7V Voltage - Clamping (Max) @ Ipp: 129V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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1N6628U | Microchip Technology |
Description: DIODE GP 660V 1.75A SQ-MELF B Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 10V, 1MHz Current - Average Rectified (Io): 1.75A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 660 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 660 V |
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1N6628US/TR | Microchip Technology |
Description: DIODE GEN PURP 600V 2.3A D-5B Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 10V, 1MHz Current - Average Rectified (Io): 2.3A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 2 µA @ 600 V |
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1N6628U/TR | Microchip Technology |
Description: DIODE GP 660V 1.75A SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 10V, 1MHz Current - Average Rectified (Io): 1.75A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 660 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 660 V |
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JAN1N6628US/TR | Microchip Technology |
Description: DIODE GP 660V 1.75A E-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 10V, 1MHz Current - Average Rectified (Io): 1.75A Supplier Device Package: E-MELF Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 660 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 660 V Qualification: MIL-PRF-19500/590 |
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JAN1N6628U/TR | Microchip Technology |
Description: DIODE GP 660V 1.75A SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 10V, 1MHz Current - Average Rectified (Io): 1.75A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 660 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 660 V Qualification: MIL-PRF-19500/590 |
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JANTX1N6628US | Microchip Technology |
Description: DIODE GEN PURP 660V 1.75A D-5B Packaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 10V, 1MHz Current - Average Rectified (Io): 1.75A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 660 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 660 V Qualification: MIL-PRF-19500/590 |
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JANTX1N6628U | Microchip Technology |
Description: DIODE GEN PURP 600V 1.75A D-5B Packaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 1.75A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 600 V Qualification: MIL-PRF-19500/590 |
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JANTX1N6628U/TR | Microchip Technology |
Description: DIODE GEN PURP 600V 1.75A D-5B Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 1.75A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 600 V Qualification: MIL-PRF-19500/590 |
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JANTXV1N6628US/TR | Microchip Technology |
Description: DIODE GEN PURP 660V 1.75A D-5B Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 10V, 1MHz Current - Average Rectified (Io): 1.75A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 660 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 660 V Qualification: MIL-PRF-19500/590 |
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JANTXV1N6628U/TR | Microchip Technology |
Description: DIODE GP 660V 1.75A SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 10V, 1MHz Current - Average Rectified (Io): 1.75A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 660 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 660 V Qualification: MIL-PRF-19500/590 |
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MIC5200-5.0BM-TR | Microchip Technology |
Description: IC REG LINEAR 5V 100MA 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 350 µA Voltage - Input (Max): 26V Number of Regulators: 1 Supplier Device Package: 8-SOIC Voltage - Output (Min/Fixed): 5V Control Features: Enable Voltage Dropout (Max): 0.35V @ 100mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 1.5 mA |
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1N3823AUR-1/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 50 µA @ 1 V |
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1N3823AUR-1/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 50 µA @ 1 V |
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VCC1-G3D-100M000000 | Microchip Technology |
Description: CMOS XO +2.5 VDC 15PF -40C TO +8 Packaging: Tape & Reel (TR) |
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SAFETY-PKG-G3-F | Microchip Technology |
Description: SOFTWARE SAFETY DATA PKG G3 Packaging: Bulk Type: License |
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APT7F120S | Microchip Technology |
Description: MOSFET N-CH 1200V 7A D3PAK Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 3A, 10V Power Dissipation (Max): 335W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3Pak Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 25 V |
на замовлення 240 шт: термін постачання 21-31 дні (днів) |
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ATV2500BQ-25PC | Microchip Technology |
Description: IC CPLD 24MC 25NS 40DIP Packaging: Tube Package / Case: 40-DIP (0.600", 15.24mm) Mounting Type: Through Hole Programmable Type: OTP Number of Macrocells: 24 Operating Temperature: 0°C ~ 70°C (TA) Delay Time tpd(1) Max: 25 ns Supplier Device Package: 40-PDIP Voltage Supply - Internal: 4.75V ~ 5.25V Number of I/O: 24 DigiKey Programmable: Not Verified |
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ATV2500BL-20JI | Microchip Technology |
Description: IC CPLD 24MC 20NS 44PLCC Packaging: Tube Package / Case: 44-LCC (J-Lead) Mounting Type: Surface Mount Programmable Type: OTP Number of Macrocells: 24 Operating Temperature: -40°C ~ 85°C (TA) Delay Time tpd(1) Max: 20 ns Supplier Device Package: 44-PLCC (16.6x16.6) Voltage Supply - Internal: 4.5V ~ 5.5V Number of I/O: 24 DigiKey Programmable: Not Verified |
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ATSAM3S1CB-AU | Microchip Technology |
Description: IC MCU 32BIT 64KB FLASH 100LQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 15x10/12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V Connectivity: EBI/EMI, I2C, Memory Card, SPI, SSC, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: 100-LQFP (14x14) Number of I/O: 79 DigiKey Programmable: Not Verified |
на замовлення 270 шт: термін постачання 21-31 дні (днів) |
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ATSAM3S1BB-AU | Microchip Technology |
Description: IC MCU 32BIT 64KB FLASH 64LQFP Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 10x10/12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V Connectivity: I2C, MMC, SPI, SSC, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Number of I/O: 47 DigiKey Programmable: Not Verified |
на замовлення 90 шт: термін постачання 21-31 дні (днів) |
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ATSAM3S1AB-MUR | Microchip Technology |
Description: IC MCU 32BIT 64KB FLASH 48QFN Packaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 8x10/12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V Connectivity: I2C, MMC, SPI, SSC, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: 48-QFN (7x7) Number of I/O: 34 DigiKey Programmable: Not Verified |
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ATSAM3S1BB-MUR | Microchip Technology |
Description: IC MCU 32BIT 64KB FLASH 64QFN Packaging: Tape & Reel (TR) Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 10x10/12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V Connectivity: I2C, MMC, SPI, SSC, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: 64-QFN (9x9) Number of I/O: 47 DigiKey Programmable: Not Verified |
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ATSAM3S1BB-MUR | Microchip Technology |
Description: IC MCU 32BIT 64KB FLASH 64QFN Packaging: Cut Tape (CT) Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 10x10/12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V Connectivity: I2C, MMC, SPI, SSC, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: 64-QFN (9x9) Number of I/O: 47 DigiKey Programmable: Not Verified |
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ATSAM3S1CB-CUR | Microchip Technology |
Description: IC MCU 32BIT 64KB FLASH 100TFBGA Packaging: Tape & Reel (TR) Package / Case: 100-TFBGA Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 15x10/12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V Connectivity: EBI/EMI, I2C, Memory Card, SPI, SSC, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: 100-TFBGA (9x9) Number of I/O: 79 DigiKey Programmable: Not Verified |
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ATSAM3S1CB-CUR | Microchip Technology |
Description: IC MCU 32BIT 64KB FLASH 100TFBGA Packaging: Cut Tape (CT) Package / Case: 100-TFBGA Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 15x10/12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V Connectivity: EBI/EMI, I2C, Memory Card, SPI, SSC, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: 100-TFBGA (9x9) Number of I/O: 79 DigiKey Programmable: Not Verified |
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ATSAM3S2CA-CU | Microchip Technology |
Description: IC MCU 32BIT 128KB FLSH 100TFBGA Packaging: Tray Package / Case: 100-TFBGA Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 128KB (128K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 15x10/12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V Connectivity: EBI/EMI, I2C, Memory Card, SPI, SSC, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: 100-TFBGA (9x9) Number of I/O: 79 DigiKey Programmable: Not Verified |
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ATSAM3S4CA-CU | Microchip Technology |
Description: IC MCU 32BIT 256KB FLSH 100TFBGA Packaging: Tray Package / Case: 100-TFBGA Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 256KB (256K x 8) RAM Size: 48K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 15x10/12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V Connectivity: EBI/EMI, I2C, Memory Card, SPI, SSC, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: 100-TFBGA (9x9) Number of I/O: 79 DigiKey Programmable: Not Verified |
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ATSAM3SD8BA-AUR | Microchip Technology |
Description: IC MCU 32BIT 512KB FLASH 64LQFP Packaging: Cut Tape (CT) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 512KB (512K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 10x10/12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V Connectivity: I2C, IrDA, Memory Card, SPI, SSC, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Number of I/O: 47 DigiKey Programmable: Not Verified |
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2N5237S | Microchip Technology |
Description: TRANS NPN 120V 10A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V Supplier Device Package: TO-39 (TO-205AD) Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 1 W |
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JANTXV2N5237S | Microchip Technology |
Description: TRANS NPN 120V 10A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 1 W Qualification: MIL-PRF-19500/394 |
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JANS2N5237S | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 1 W Qualification: MIL-PRF-19500/394 |
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AT88SC0204C-PU | Microchip Technology |
Description: IC SECURE MEMORY 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Type: Secure Memory Applications: Embedded, Smart Card Supplier Device Package: 8-PDIP DigiKey Programmable: Not Verified |
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ATA6621N-PGQW | Microchip Technology |
Description: IC TRANSCEIVER 1/1 20QFN Packaging: Tape & Reel (TR) Package / Case: 20-VQFN Exposed Pad Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 5V ~ 18V Number of Drivers/Receivers: 1/1 Protocol: LINbus Supplier Device Package: 20-QFN (5x5) |
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DSC1121AI2-200.0000T | Microchip Technology |
Description: MEMS OSC XO 200.0000MHZ CMOS SMD Packaging: Strip Package / Case: 6-VDFN Exposed Pad Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Mounting Type: Surface Mount Output: CMOS Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±25ppm Voltage - Supply: 2.25V ~ 3.6V Current - Supply (Max): 35mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 200 MHz Base Resonator: MEMS |
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JANTXV1N990B-1 | Microchip Technology |
Description: ZENER DIODE Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 160 V Impedance (Max) (Zzt): 1700 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Military Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 122 V Qualification: MIL-PRF-19500/117 |
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JANTXV1N990B-1/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 160 V Impedance (Max) (Zzt): 1.7 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Military Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 122 V Qualification: MIL-PRF-19500/117 |
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JAN1N990B-1 | Microchip Technology |
Description: ZENER DIODE Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 160 V Impedance (Max) (Zzt): 1700 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Military Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 122 V Qualification: MIL-PRF-19500/117 |
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JANTX1N990BUR-1 | Microchip Technology |
Description: ZENER DIODE Tolerance: ±5% Packaging: Bulk Package / Case: DO-213AA (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 160 V Impedance (Max) (Zzt): 1700 Ohms Supplier Device Package: DO-213AA Grade: Military Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 122 V Qualification: MIL-PRF-19500/117 |
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VXM7-1DW-20-19M2000000 | Microchip Technology |
Description: SMT XTAL -10C TO +70C +/-15PPM Packaging: Tape & Reel (TR) |
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JAN1N6772R | Microchip Technology |
Description: DIODE GEN PURP 400V 8A TO257 Packaging: Bulk Package / Case: TO-257-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard, Reverse Polarity Capacitance @ Vr, F: 200pF @ 5V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-257 Grade: Military Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 320 V Qualification: MIL-PRF-19500/645 |
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ATSAMD51P19A-AUT-EFP | Microchip Technology |
Description: IC MCU 32BIT 512KB FLASH 128TQFP Packaging: Tape & Reel (TR) Package / Case: 128-TQFP Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 512KB (512K x 8) RAM Size: 192K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 32x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V Connectivity: EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: 128-TQFP (14x14) Number of I/O: 99 DigiKey Programmable: Not Verified |
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ATSAMD51P19A-AUT-EFP | Microchip Technology |
Description: IC MCU 32BIT 512KB FLASH 128TQFP Packaging: Cut Tape (CT) Package / Case: 128-TQFP Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 512KB (512K x 8) RAM Size: 192K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 32x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V Connectivity: EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: 128-TQFP (14x14) Number of I/O: 99 DigiKey Programmable: Not Verified |
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JANTX1N6643U/TR | Microchip Technology |
Description: DIODE GP 75V 300MA SQ-MELF B Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 300mA Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 200°C Grade: Military Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 50 V Qualification: MIL-PRF-19500/578 |
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1N6621U | Microchip Technology |
Description: DIODE GP 440V 1.2A A SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Current - Average Rectified (Io): 1.2A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 440 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Current - Reverse Leakage @ Vr: 500 nA @ 440 V |
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1N6621US/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 2A D-5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
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1N6621U/TR | Microchip Technology |
Description: DIODE GP 440V 1.2A A SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Current - Average Rectified (Io): 1.2A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 440 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Current - Reverse Leakage @ Vr: 500 nA @ 440 V |
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JAN1N6621US/TR | Microchip Technology |
Description: DIODE GEN PURP 75V 200MA D-5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C Grade: Military Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 75 V Qualification: MIL-PRF-19500/116 |
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JAN1N6621U/TR | Microchip Technology |
Description: DIODE GP 440V 1.2A A SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Current - Average Rectified (Io): 1.2A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 440 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Current - Reverse Leakage @ Vr: 500 nA @ 440 V Qualification: MIL-PRF-19500/585 |
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MALCE80A |
Виробник: Microchip Technology
Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
MALCE80Ae3 |
Виробник: Microchip Technology
Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
MXLCE80A |
Виробник: Microchip Technology
Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
MXLCE80Ae3 |
Виробник: Microchip Technology
Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
MXLLCE80A |
Виробник: Microchip Technology
Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
MXLLCE80Ae3 |
Виробник: Microchip Technology
Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
MXLSMCGLCE80A |
Виробник: Microchip Technology
Description: TVS DIODE 80VWM 129VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 80VWM 129VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
MXLSMCGLCE80Ae3 |
Виробник: Microchip Technology
Description: TVS DIODE 80VWM 129VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 80VWM 129VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
MXSMCGLCE80A |
Виробник: Microchip Technology
Description: TVS DIODE 80VWM 129VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 80VWM 129VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
MXSMCGLCE80Ae3 |
Виробник: Microchip Technology
Description: TVS DIODE 80VWM 129VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 80VWM 129VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
MXSMCJLCE80A |
Виробник: Microchip Technology
Description: TVS DIODE 80VWM 129VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 80VWM 129VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
MXSMCJLCE80Ae3 |
Виробник: Microchip Technology
Description: TVS DIODE 80VWM 129VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 80VWM 129VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
1N6628U |
Виробник: Microchip Technology
Description: DIODE GP 660V 1.75A SQ-MELF B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Description: DIODE GP 660V 1.75A SQ-MELF B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
товар відсутній
1N6628US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 2.3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Description: DIODE GEN PURP 600V 2.3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
товар відсутній
1N6628U/TR |
Виробник: Microchip Technology
Description: DIODE GP 660V 1.75A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Description: DIODE GP 660V 1.75A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
товар відсутній
JAN1N6628US/TR |
Виробник: Microchip Technology
Description: DIODE GP 660V 1.75A E-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: E-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Description: DIODE GP 660V 1.75A E-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: E-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
товар відсутній
JAN1N6628U/TR |
Виробник: Microchip Technology
Description: DIODE GP 660V 1.75A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Description: DIODE GP 660V 1.75A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
товар відсутній
JANTX1N6628US |
Виробник: Microchip Technology
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
товар відсутній
JANTX1N6628U |
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: MIL-PRF-19500/590
Description: DIODE GEN PURP 600V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: MIL-PRF-19500/590
товар відсутній
JANTX1N6628U/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 1.75A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: MIL-PRF-19500/590
Description: DIODE GEN PURP 600V 1.75A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: MIL-PRF-19500/590
товар відсутній
JANTXV1N6628US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
товар відсутній
JANTXV1N6628U/TR |
Виробник: Microchip Technology
Description: DIODE GP 660V 1.75A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Description: DIODE GP 660V 1.75A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
товар відсутній
MIC5200-5.0BM-TR |
Виробник: Microchip Technology
Description: IC REG LINEAR 5V 100MA 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 350 µA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Voltage Dropout (Max): 0.35V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 1.5 mA
Description: IC REG LINEAR 5V 100MA 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 350 µA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Voltage Dropout (Max): 0.35V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 1.5 mA
товар відсутній
1N3823AUR-1/TR |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
товар відсутній
1N3823AUR-1/TR |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
товар відсутній
VCC1-G3D-100M000000 |
Виробник: Microchip Technology
Description: CMOS XO +2.5 VDC 15PF -40C TO +8
Packaging: Tape & Reel (TR)
Description: CMOS XO +2.5 VDC 15PF -40C TO +8
Packaging: Tape & Reel (TR)
товар відсутній
SAFETY-PKG-G3-F |
товар відсутній
APT7F120S |
Виробник: Microchip Technology
Description: MOSFET N-CH 1200V 7A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 3A, 10V
Power Dissipation (Max): 335W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 25 V
Description: MOSFET N-CH 1200V 7A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 3A, 10V
Power Dissipation (Max): 335W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 25 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 512.13 грн |
100+ | 425.47 грн |
ATV2500BQ-25PC |
Виробник: Microchip Technology
Description: IC CPLD 24MC 25NS 40DIP
Packaging: Tube
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Programmable Type: OTP
Number of Macrocells: 24
Operating Temperature: 0°C ~ 70°C (TA)
Delay Time tpd(1) Max: 25 ns
Supplier Device Package: 40-PDIP
Voltage Supply - Internal: 4.75V ~ 5.25V
Number of I/O: 24
DigiKey Programmable: Not Verified
Description: IC CPLD 24MC 25NS 40DIP
Packaging: Tube
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Programmable Type: OTP
Number of Macrocells: 24
Operating Temperature: 0°C ~ 70°C (TA)
Delay Time tpd(1) Max: 25 ns
Supplier Device Package: 40-PDIP
Voltage Supply - Internal: 4.75V ~ 5.25V
Number of I/O: 24
DigiKey Programmable: Not Verified
товар відсутній
ATV2500BL-20JI |
Виробник: Microchip Technology
Description: IC CPLD 24MC 20NS 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Programmable Type: OTP
Number of Macrocells: 24
Operating Temperature: -40°C ~ 85°C (TA)
Delay Time tpd(1) Max: 20 ns
Supplier Device Package: 44-PLCC (16.6x16.6)
Voltage Supply - Internal: 4.5V ~ 5.5V
Number of I/O: 24
DigiKey Programmable: Not Verified
Description: IC CPLD 24MC 20NS 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Programmable Type: OTP
Number of Macrocells: 24
Operating Temperature: -40°C ~ 85°C (TA)
Delay Time tpd(1) Max: 20 ns
Supplier Device Package: 44-PLCC (16.6x16.6)
Voltage Supply - Internal: 4.5V ~ 5.5V
Number of I/O: 24
DigiKey Programmable: Not Verified
товар відсутній
ATSAM3S1CB-AU |
Виробник: Microchip Technology
Description: IC MCU 32BIT 64KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 15x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 79
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 15x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 79
DigiKey Programmable: Not Verified
на замовлення 270 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 308.06 грн |
25+ | 269 грн |
100+ | 243.98 грн |
ATSAM3S1BB-AU |
Виробник: Microchip Technology
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 10x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, MMC, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 47
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 10x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, MMC, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 47
DigiKey Programmable: Not Verified
на замовлення 90 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 277.57 грн |
25+ | 245.36 грн |
ATSAM3S1AB-MUR |
Виробник: Microchip Technology
Description: IC MCU 32BIT 64KB FLASH 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x10/12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, MMC, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 34
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x10/12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, MMC, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 34
DigiKey Programmable: Not Verified
товар відсутній
ATSAM3S1BB-MUR |
Виробник: Microchip Technology
Description: IC MCU 32BIT 64KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 10x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, MMC, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 47
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 10x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, MMC, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 47
DigiKey Programmable: Not Verified
товар відсутній
ATSAM3S1BB-MUR |
Виробник: Microchip Technology
Description: IC MCU 32BIT 64KB FLASH 64QFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 10x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, MMC, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 47
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 64QFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 10x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, MMC, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 47
DigiKey Programmable: Not Verified
товар відсутній
ATSAM3S1CB-CUR |
Виробник: Microchip Technology
Description: IC MCU 32BIT 64KB FLASH 100TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 15x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (9x9)
Number of I/O: 79
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 100TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 15x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (9x9)
Number of I/O: 79
DigiKey Programmable: Not Verified
товар відсутній
ATSAM3S1CB-CUR |
Виробник: Microchip Technology
Description: IC MCU 32BIT 64KB FLASH 100TFBGA
Packaging: Cut Tape (CT)
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 15x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (9x9)
Number of I/O: 79
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 100TFBGA
Packaging: Cut Tape (CT)
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 15x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (9x9)
Number of I/O: 79
DigiKey Programmable: Not Verified
товар відсутній
ATSAM3S2CA-CU |
Виробник: Microchip Technology
Description: IC MCU 32BIT 128KB FLSH 100TFBGA
Packaging: Tray
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 15x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (9x9)
Number of I/O: 79
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLSH 100TFBGA
Packaging: Tray
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 15x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (9x9)
Number of I/O: 79
DigiKey Programmable: Not Verified
товар відсутній
ATSAM3S4CA-CU |
Виробник: Microchip Technology
Description: IC MCU 32BIT 256KB FLSH 100TFBGA
Packaging: Tray
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 15x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (9x9)
Number of I/O: 79
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLSH 100TFBGA
Packaging: Tray
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 15x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (9x9)
Number of I/O: 79
DigiKey Programmable: Not Verified
товар відсутній
ATSAM3SD8BA-AUR |
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 10x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 47
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 512KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 10x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 47
DigiKey Programmable: Not Verified
товар відсутній
2N5237S |
Виробник: Microchip Technology
Description: TRANS NPN 120V 10A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
Description: TRANS NPN 120V 10A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
товар відсутній
JANTXV2N5237S |
Виробник: Microchip Technology
Description: TRANS NPN 120V 10A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/394
Description: TRANS NPN 120V 10A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/394
товар відсутній
JANS2N5237S |
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/394
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/394
товар відсутній
AT88SC0204C-PU |
Виробник: Microchip Technology
Description: IC SECURE MEMORY 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Secure Memory
Applications: Embedded, Smart Card
Supplier Device Package: 8-PDIP
DigiKey Programmable: Not Verified
Description: IC SECURE MEMORY 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Secure Memory
Applications: Embedded, Smart Card
Supplier Device Package: 8-PDIP
DigiKey Programmable: Not Verified
товар відсутній
ATA6621N-PGQW |
Виробник: Microchip Technology
Description: IC TRANSCEIVER 1/1 20QFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 5V ~ 18V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: 20-QFN (5x5)
Description: IC TRANSCEIVER 1/1 20QFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 5V ~ 18V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: 20-QFN (5x5)
товар відсутній
DSC1121AI2-200.0000T |
Виробник: Microchip Technology
Description: MEMS OSC XO 200.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 200 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 200.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 200 MHz
Base Resonator: MEMS
товар відсутній
JANTXV1N990B-1 |
Виробник: Microchip Technology
Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1700 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
Qualification: MIL-PRF-19500/117
Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1700 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
Qualification: MIL-PRF-19500/117
товар відсутній
JANTXV1N990B-1/TR |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1.7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
Qualification: MIL-PRF-19500/117
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1.7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
Qualification: MIL-PRF-19500/117
товар відсутній
JAN1N990B-1 |
Виробник: Microchip Technology
Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1700 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
Qualification: MIL-PRF-19500/117
Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1700 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
Qualification: MIL-PRF-19500/117
товар відсутній
JANTX1N990BUR-1 |
Виробник: Microchip Technology
Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1700 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
Qualification: MIL-PRF-19500/117
Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1700 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
Qualification: MIL-PRF-19500/117
товар відсутній
VXM7-1DW-20-19M2000000 |
Виробник: Microchip Technology
Description: SMT XTAL -10C TO +70C +/-15PPM
Packaging: Tape & Reel (TR)
Description: SMT XTAL -10C TO +70C +/-15PPM
Packaging: Tape & Reel (TR)
товар відсутній
JAN1N6772R |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 8A TO257
Packaging: Bulk
Package / Case: TO-257-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-257
Grade: Military
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 320 V
Qualification: MIL-PRF-19500/645
Description: DIODE GEN PURP 400V 8A TO257
Packaging: Bulk
Package / Case: TO-257-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-257
Grade: Military
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 320 V
Qualification: MIL-PRF-19500/645
товар відсутній
ATSAMD51P19A-AUT-EFP |
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 128TQFP
Packaging: Tape & Reel (TR)
Package / Case: 128-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 128-TQFP (14x14)
Number of I/O: 99
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 512KB FLASH 128TQFP
Packaging: Tape & Reel (TR)
Package / Case: 128-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 128-TQFP (14x14)
Number of I/O: 99
DigiKey Programmable: Not Verified
товар відсутній
ATSAMD51P19A-AUT-EFP |
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 128TQFP
Packaging: Cut Tape (CT)
Package / Case: 128-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 128-TQFP (14x14)
Number of I/O: 99
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 512KB FLASH 128TQFP
Packaging: Cut Tape (CT)
Package / Case: 128-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 128-TQFP (14x14)
Number of I/O: 99
DigiKey Programmable: Not Verified
товар відсутній
JANTX1N6643U/TR |
Виробник: Microchip Technology
Description: DIODE GP 75V 300MA SQ-MELF B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 50 V
Qualification: MIL-PRF-19500/578
Description: DIODE GP 75V 300MA SQ-MELF B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 50 V
Qualification: MIL-PRF-19500/578
товар відсутній
1N6621U |
Виробник: Microchip Technology
Description: DIODE GP 440V 1.2A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Description: DIODE GP 440V 1.2A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
товар відсутній
1N6621US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
товар відсутній
1N6621U/TR |
Виробник: Microchip Technology
Description: DIODE GP 440V 1.2A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Description: DIODE GP 440V 1.2A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
товар відсутній
JAN1N6621US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 75V 200MA D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Qualification: MIL-PRF-19500/116
Description: DIODE GEN PURP 75V 200MA D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Qualification: MIL-PRF-19500/116
товар відсутній
JAN1N6621U/TR |
Виробник: Microchip Technology
Description: DIODE GP 440V 1.2A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Qualification: MIL-PRF-19500/585
Description: DIODE GP 440V 1.2A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Qualification: MIL-PRF-19500/585
товар відсутній