Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (335782) > Сторінка 463 з 5597
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AT90CAN128-15MT1 | Microchip Technology |
 Description: IC MCU 8BIT 128KB FLASH 64QFNPackaging: Tape & Reel (TR) Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 128KB (128K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: AVR Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, I²C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 64-QFN (9x9) Part Status: Active Number of I/O: 53 DigiKey Programmable: Not Verified |
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AT90CAN128-15MZ | Microchip Technology |
Description: IC MCU 8BIT 128KB FLASH 64QFN Packaging: Tape & Reel (TR) Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 128KB (128K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: AVR Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, I²C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 64-QFN (9x9) Part Status: Active Number of I/O: 53 DigiKey Programmable: Not Verified |
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AT90CAN32-15AT | Microchip Technology |
Description: IC MCU 8BIT 32KB FLASH 64TQFP Packaging: Tape & Reel (TR) Package / Case: 64-TQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 32KB (32K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 1K x 8 Core Processor: AVR Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, I²C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 64-TQFP (14x14) Part Status: Active Number of I/O: 53 DigiKey Programmable: Not Verified |
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AT90CAN32-15AT1 | Microchip Technology |
Description: IC MCU 8BIT 32KB FLASH 64TQFP Packaging: Tape & Reel (TR) Package / Case: 64-TQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 32KB (32K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 1K x 8 Core Processor: AVR Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, I²C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 64-TQFP (14x14) Part Status: Active Number of I/O: 53 DigiKey Programmable: Not Verified |
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AT90CAN32-15AZ | Microchip Technology |
Description: IC MCU 8BIT 32KB FLASH 64TQFP Packaging: Tape & Reel (TR) Package / Case: 64-TQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 32KB (32K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 1K x 8 Core Processor: AVR Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, I²C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 64-TQFP (14x14) Part Status: Active Number of I/O: 53 DigiKey Programmable: Not Verified |
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AT90CAN32-16AUR | Microchip Technology |
Description: IC MCU 8BIT 32KB FLASH 64TQFP Packaging: Tape & Reel (TR) Package / Case: 64-TQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 32KB (32K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 1K x 8 Core Processor: AVR Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 64-TQFP (14x14) Part Status: Active Number of I/O: 53 DigiKey Programmable: Verified |
на замовлення 2040 шт: термін постачання 21-31 дні (днів) |
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AT90CAN64-15AT | Microchip Technology |
Description: IC MCU 8BIT 64KB FLASH 64TQFP Packaging: Tape & Reel (TR) Package / Case: 64-TQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 64KB (64K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: AVR Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, I²C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 64-TQFP (14x14) Part Status: Active Number of I/O: 53 DigiKey Programmable: Verified |
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AT90CAN64-15AT1 | Microchip Technology |
Description: IC MCU 8BIT 64KB FLASH 64TQFP Packaging: Tape & Reel (TR) Package / Case: 64-TQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 64KB (64K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: AVR Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, I²C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 64-TQFP (14x14) Part Status: Active Number of I/O: 53 DigiKey Programmable: Verified |
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AT90CAN64-15AZ | Microchip Technology |
Description: IC MCU 8BIT 64KB FLASH 64TQFP Packaging: Tape & Reel (TR) Package / Case: 64-TQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 64KB (64K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: AVR Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, I²C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 64-TQFP (14x14) Part Status: Active Number of I/O: 53 DigiKey Programmable: Verified |
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AT90CAN64-15MT | Microchip Technology |
Description: IC MCU 8BIT 64KB FLASH 64QFN Packaging: Tape & Reel (TR) Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 64KB (64K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: AVR Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, I²C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 64-QFN (9x9) Part Status: Active Number of I/O: 53 DigiKey Programmable: Verified |
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AT90CAN64-15MT1 | Microchip Technology |
Description: IC MCU 8BIT 64KB FLASH 64QFN Packaging: Tape & Reel (TR) Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 64KB (64K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: AVR Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, I²C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 64-QFN (9x9) Part Status: Active Number of I/O: 53 DigiKey Programmable: Verified |
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AT90CAN64-15MZ | Microchip Technology |
Description: IC MCU 8BIT 64KB FLASH 64QFN Packaging: Tape & Reel (TR) Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 64KB (64K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: AVR Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, I²C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 64-QFN (9x9) Part Status: Active Number of I/O: 53 DigiKey Programmable: Verified |
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| ATA556714N-DDB | Microchip Technology |
Description: IC RFID TRANSP 100-150KHZ |
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| ATA556714N-DDT | Microchip Technology |
Description: IC RFID TRANSP 100-150KHZ |
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| ATA556715-PAE | Microchip Technology |
Description: IC RFID TRANSP 100-150KHZ NOA3 Packaging: Bulk Package / Case: NOA3 Micromodule Mounting Type: Surface Mount Frequency: 100kHz ~ 150kHz Type: RFID Transponder Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.2V ~ 4.8V Standards: ISO 11784, ISO 11785 |
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APT30GF60JU2 | Microchip Technology |
Description: IGBT MODULE 600V 58A 192W SOT227 Packaging: Bulk Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: NPT Current - Collector (Ic) (Max): 58 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 192 W Current - Collector Cutoff (Max): 40 µA Input Capacitance (Cies) @ Vce: 1.85 nF @ 25 V |
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APT30GF60JU3 | Microchip Technology |
Description: IGBT MODULE 600V 58A 192W ISOTOP Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: NPT Current - Collector (Ic) (Max): 58 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 192 W Current - Collector Cutoff (Max): 40 µA Input Capacitance (Cies) @ Vce: 1.85 nF @ 25 V |
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APT35GT120JU2 | Microchip Technology |
Description: IGBT MOD 1200V 55A 260W SOT227 Packaging: Bulk Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 260 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 2.53 nF @ 25 V |
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APT35GT120JU3 | Microchip Technology |
Description: IGBT MOD 1200V 55A 260W SOT227 Packaging: Bulk Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 260 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 2.53 nF @ 25 V |
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APT40N60JCU2 | Microchip Technology |
Description: MOSFET N-CH 600V 40A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 1mA Supplier Device Package: SOT-227 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V |
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APT40N60JCU3 | Microchip Technology |
Description: MOSFET N-CH 600V 40A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 1mA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V |
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APT5010JLLU2 | Microchip Technology |
Description: MOSFET N-CH 500V 41A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V Power Dissipation (Max): 378W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SOT-227 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V |
на замовлення 34 шт: термін постачання 21-31 дні (днів) |
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APT5010JLLU3 | Microchip Technology |
Description: MOSFET N-CH 500V 41A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V Power Dissipation (Max): 378W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V |
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APT5010JVRU2 | Microchip Technology |
Description: MOSFET N-CH 500V 44A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 22A, 10V Power Dissipation (Max): 450W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: SOT-227 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 312 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7410 pF @ 25 V |
на замовлення 61 шт: термін постачання 21-31 дні (днів) |
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APT5010JVRU3 | Microchip Technology |
Description: MOSFET N-CH 500V 44A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 22A, 10V Power Dissipation (Max): 450W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 312 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7410 pF @ 25 V |
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APT50GF60JU2 | Microchip Technology |
Description: IGBT MODULE 600V 75A 277W SOT227 Packaging: Bulk Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: NPT Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 277 W Current - Collector Cutoff (Max): 40 µA Input Capacitance (Cies) @ Vce: 2.25 nF @ 25 V |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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APT50M75JLLU2 | Microchip Technology |
Description: MOSFET N-CH 500V 51A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: SOT-227 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V |
на замовлення 31 шт: термін постачання 21-31 дні (днів) |
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APT50N60JCCU2 | Microchip Technology |
Description: MOSFET N-CH 600V 50A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 3mA Supplier Device Package: SOT-227 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V |
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APT75GT120JU2 | Microchip Technology |
Description: IGBT MOD 1200V 100A 416W SOT227 Packaging: Bulk Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 416 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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APT75GT120JU3 | Microchip Technology |
Description: IGBT MOD 1200V 100A 416W SOT227 |
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APTC60AM18SCG | Microchip Technology |
Description: MOSFET 2N-CH 600V 143A SP6 |
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APTC60AM35SCTG | Microchip Technology |
Description: MOSFET 2N-CH 600V 72A SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 416W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72A Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 36A, 10V Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Supplier Device Package: SP4 |
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| APTC60AM35T1G | Microchip Technology |
Description: MOSFET 2N-CH 600V 72A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 416W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72A Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Supplier Device Package: SP1 |
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| APTC60AM45T1G | Microchip Technology |
Description: MOSFET 2N-CH 600V 49A SP1 |
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APTC60DAM18CTG | Microchip Technology |
Description: MOSFET N-CH 600V 143A SP4 |
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APTC60DDAM35T3G | Microchip Technology |
Description: MOSFET 2N-CH 600V 72A SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 416W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72A Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Supplier Device Package: SP3 |
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APTC60HM35T3G | Microchip Technology |
Description: MOSFET 4N-CH 600V 72A SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 416W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72A Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Supplier Device Package: SP3 |
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| APTC60HM45T1G | Microchip Technology |
Description: MOSFET 4N-CH 600V 49A SP1 |
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APTC60SKM24T1G | Microchip Technology |
Description: MOSFET N-CH 600V 95A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V Power Dissipation (Max): 462W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 5mA Supplier Device Package: SP1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V |
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APTC60TAM35PG | Microchip Technology |
Description: MOSFET 6N-CH 600V 72A SP6-P Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 416W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72A Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Supplier Device Package: SP6-P |
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APTC60TDUM35PG | Microchip Technology |
Description: MOSFET 6N-CH 600V 72A SP6-P Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 416W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72A Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Supplier Device Package: SP6-P |
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| APTC80A10SCTG | Microchip Technology |
Description: MOSFET 2N-CH 800V 42A SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 416W Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 42A Input Capacitance (Ciss) (Max) @ Vds: 6761pF @ 25V Rds On (Max) @ Id, Vgs: 100mOhm @ 21A, 10V Gate Charge (Qg) (Max) @ Vgs: 273nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Supplier Device Package: SP4 |
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| APTC80A15SCTG | Microchip Technology |
Description: MOSFET 2N-CH 800V 28A SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 277W Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 28A Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Supplier Device Package: SP4 |
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| APTC80AM75SCG | Microchip Technology |
Description: MOSFET 2N-CH 800V 56A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 568W Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 56A Input Capacitance (Ciss) (Max) @ Vds: 9015pF @ 25V Rds On (Max) @ Id, Vgs: 75mOhm @ 28A, 10V Gate Charge (Qg) (Max) @ Vgs: 364nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 4mA Supplier Device Package: SP6 |
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| APTC80DDA15T3G | Microchip Technology |
Description: MOSFET 2N-CH 800V 28A SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 277W Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 28A Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Supplier Device Package: SP3 |
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| APTC80H15T1G | Microchip Technology |
Description: MOSFET 4N-CH 800V 28A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 277W Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 28A Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Supplier Device Package: SP1 |
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| APTC80H15T3G | Microchip Technology |
Description: MOSFET 4N-CH 800V 28A SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 277W Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 28A Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Supplier Device Package: SP3 Part Status: Active |
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| APTC80H29SCTG | Microchip Technology |
Description: MOSFET 4N-CH 800V 15A SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 156W Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 15A Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Supplier Device Package: SP4 |
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| APTC80H29T3G | Microchip Technology |
Description: MOSFET 4N-CH 800V 15A SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 156W Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 15A Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Supplier Device Package: SP3 |
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APTC80TA15PG | Microchip Technology |
Description: MOSFET 6N-CH 800V 28A SP6-P Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 277W Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 28A Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Supplier Device Package: SP6-P |
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APTC80TDU15PG | Microchip Technology |
Description: MOSFET 6N-CH 800V 28A SP6-P Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 277W Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 28A Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Supplier Device Package: SP6-P |
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| APTCV40H60CT1G | Microchip Technology |
Description: IGBT MODULE 600V 80A 176W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 176 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V |
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| APTCV50H60T3G | Microchip Technology |
Description: IGBT MODULE 600V 80A 176W SP3 |
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APTDF200H60G | Microchip Technology |
Description: BRIDGE RECT 1PHASE 600V 270A SP6 |
на замовлення 34 шт: термін постачання 21-31 дні (днів) |
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| APTDF30H1201G | Microchip Technology |
Description: BRIDGE RECT 1PHASE 1.2KV 43A SP1 |
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APTDF400AK120G | Microchip Technology |
Description: DIODE MODULE 1.2KV 470A SP6 Packaging: Tube Package / Case: LP4 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 385 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 470A Supplier Device Package: SP6 Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 400 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
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APTDF400KK120G | Microchip Technology |
Description: DIODE MODULE 1.2KV 470A SP6 Packaging: Bulk Package / Case: LP4 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 385 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 470A Supplier Device Package: SP6 Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 400 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
на замовлення 137 шт: термін постачання 21-31 дні (днів) |
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APTDF400KK20G | Microchip Technology |
Description: DIODE MODULE GP 200V 500A SP6 Packaging: Bulk Package / Case: LP4 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 500A Supplier Device Package: SP6 Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 400 A Current - Reverse Leakage @ Vr: 750 µA @ 200 V |
на замовлення 17 шт: термін постачання 21-31 дні (днів) |
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APTDF400U120G | Microchip Technology |
Description: DIODE GEN PURP 1.2KV 450A LP4 Packaging: Bulk Package / Case: LP4 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 110 ns Technology: Standard Current - Average Rectified (Io): 450A Supplier Device Package: LP4 Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 A Current - Reverse Leakage @ Vr: 2.5 mA @ 1200 V |
на замовлення 516 шт: термін постачання 21-31 дні (днів) |
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APTDF430U100G | Microchip Technology |
Description: DIODE GEN PURP 1KV 500A LP4 Packaging: Bulk Package / Case: LP4 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120 ns Technology: Standard Current - Average Rectified (Io): 500A Supplier Device Package: LP4 Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 500 A Current - Reverse Leakage @ Vr: 2.5 mA @ 1000 V |
товар відсутній |
| AT90CAN128-15MT1 |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 128KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I²C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 128KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I²C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
товар відсутній
| AT90CAN128-15MZ |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 128KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I²C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 128KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I²C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
товар відсутній
| AT90CAN32-15AT |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 32KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I²C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 32KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I²C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
товар відсутній
| AT90CAN32-15AT1 |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 32KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I²C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 32KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I²C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
товар відсутній
| AT90CAN32-15AZ |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 32KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I²C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 32KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I²C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
товар відсутній
| AT90CAN32-16AUR |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 32KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Verified
Description: IC MCU 8BIT 32KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Verified
на замовлення 2040 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 373.94 грн |
| AT90CAN64-15AT |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I²C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Verified
Description: IC MCU 8BIT 64KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I²C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Verified
товар відсутній
| AT90CAN64-15AT1 |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I²C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Verified
Description: IC MCU 8BIT 64KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I²C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Verified
товар відсутній
| AT90CAN64-15AZ |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I²C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Verified
Description: IC MCU 8BIT 64KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I²C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Verified
товар відсутній
| AT90CAN64-15MT |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I²C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Verified
Description: IC MCU 8BIT 64KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I²C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Verified
товар відсутній
| AT90CAN64-15MT1 |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I²C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Verified
Description: IC MCU 8BIT 64KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I²C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Verified
товар відсутній
| AT90CAN64-15MZ |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I²C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Verified
Description: IC MCU 8BIT 64KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I²C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Verified
товар відсутній
| ATA556715-PAE |
|
Виробник: Microchip Technology
Description: IC RFID TRANSP 100-150KHZ NOA3
Packaging: Bulk
Package / Case: NOA3 Micromodule
Mounting Type: Surface Mount
Frequency: 100kHz ~ 150kHz
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.2V ~ 4.8V
Standards: ISO 11784, ISO 11785
Description: IC RFID TRANSP 100-150KHZ NOA3
Packaging: Bulk
Package / Case: NOA3 Micromodule
Mounting Type: Surface Mount
Frequency: 100kHz ~ 150kHz
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.2V ~ 4.8V
Standards: ISO 11784, ISO 11785
товар відсутній
| APT30GF60JU2 |
|
Виробник: Microchip Technology
Description: IGBT MODULE 600V 58A 192W SOT227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 192 W
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 1.85 nF @ 25 V
Description: IGBT MODULE 600V 58A 192W SOT227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 192 W
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 1.85 nF @ 25 V
товар відсутній
| APT30GF60JU3 |
|
Виробник: Microchip Technology
Description: IGBT MODULE 600V 58A 192W ISOTOP
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: NPT
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 192 W
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 1.85 nF @ 25 V
Description: IGBT MODULE 600V 58A 192W ISOTOP
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: NPT
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 192 W
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 1.85 nF @ 25 V
товар відсутній
| APT35GT120JU2 |
|
Виробник: Microchip Technology
Description: IGBT MOD 1200V 55A 260W SOT227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 260 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.53 nF @ 25 V
Description: IGBT MOD 1200V 55A 260W SOT227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 260 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.53 nF @ 25 V
товар відсутній
| APT35GT120JU3 |
|
Виробник: Microchip Technology
Description: IGBT MOD 1200V 55A 260W SOT227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 260 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.53 nF @ 25 V
Description: IGBT MOD 1200V 55A 260W SOT227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 260 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.53 nF @ 25 V
товар відсутній
| APT40N60JCU2 |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 40A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
Description: MOSFET N-CH 600V 40A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
товар відсутній
| APT40N60JCU3 |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 40A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
Description: MOSFET N-CH 600V 40A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
товар відсутній
| APT5010JLLU2 |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 41A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Power Dissipation (Max): 378W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Description: MOSFET N-CH 500V 41A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Power Dissipation (Max): 378W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
на замовлення 34 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2072.08 грн |
| APT5010JLLU3 |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 41A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Power Dissipation (Max): 378W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Description: MOSFET N-CH 500V 41A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Power Dissipation (Max): 378W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
товар відсутній
| APT5010JVRU2 |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 44A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 22A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 312 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7410 pF @ 25 V
Description: MOSFET N-CH 500V 44A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 22A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 312 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7410 pF @ 25 V
на замовлення 61 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2380.27 грн |
| APT5010JVRU3 |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 44A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 22A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 312 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7410 pF @ 25 V
Description: MOSFET N-CH 500V 44A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 22A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 312 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7410 pF @ 25 V
товар відсутній
| APT50GF60JU2 |
|
Виробник: Microchip Technology
Description: IGBT MODULE 600V 75A 277W SOT227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 277 W
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.25 nF @ 25 V
Description: IGBT MODULE 600V 75A 277W SOT227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 277 W
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.25 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2264.88 грн |
| APT50M75JLLU2 |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 51A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
Description: MOSFET N-CH 500V 51A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
на замовлення 31 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2203.24 грн |
| APT50N60JCCU2 |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 50A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Description: MOSFET N-CH 600V 50A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
товар відсутній
| APT75GT120JU2 |
|
Виробник: Microchip Technology
Description: IGBT MOD 1200V 100A 416W SOT227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 416 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V
Description: IGBT MOD 1200V 100A 416W SOT227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 416 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2216.86 грн |
| 100+ | 1778.99 грн |
| APT75GT120JU3 |
|
Виробник: Microchip Technology
Description: IGBT MOD 1200V 100A 416W SOT227
Description: IGBT MOD 1200V 100A 416W SOT227
товар відсутній
| APTC60AM35SCTG |
|
Виробник: Microchip Technology
Description: MOSFET 2N-CH 600V 72A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 36A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP4
Description: MOSFET 2N-CH 600V 72A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 36A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP4
товар відсутній
| APTC60AM35T1G |
|
Виробник: Microchip Technology
Description: MOSFET 2N-CH 600V 72A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP1
Description: MOSFET 2N-CH 600V 72A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP1
товар відсутній
| APTC60DDAM35T3G |
|
Виробник: Microchip Technology
Description: MOSFET 2N-CH 600V 72A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP3
Description: MOSFET 2N-CH 600V 72A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP3
товар відсутній
| APTC60HM35T3G |
|
Виробник: Microchip Technology
Description: MOSFET 4N-CH 600V 72A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP3
Description: MOSFET 4N-CH 600V 72A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP3
товар відсутній
| APTC60SKM24T1G |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 95A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SP1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
Description: MOSFET N-CH 600V 95A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SP1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
товар відсутній
| APTC60TAM35PG |
|
Виробник: Microchip Technology
Description: MOSFET 6N-CH 600V 72A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP6-P
Description: MOSFET 6N-CH 600V 72A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP6-P
товар відсутній
| APTC60TDUM35PG |
|
Виробник: Microchip Technology
Description: MOSFET 6N-CH 600V 72A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP6-P
Description: MOSFET 6N-CH 600V 72A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP6-P
товар відсутній
| APTC80A10SCTG |
|
Виробник: Microchip Technology
Description: MOSFET 2N-CH 800V 42A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 42A
Input Capacitance (Ciss) (Max) @ Vds: 6761pF @ 25V
Rds On (Max) @ Id, Vgs: 100mOhm @ 21A, 10V
Gate Charge (Qg) (Max) @ Vgs: 273nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: SP4
Description: MOSFET 2N-CH 800V 42A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 42A
Input Capacitance (Ciss) (Max) @ Vds: 6761pF @ 25V
Rds On (Max) @ Id, Vgs: 100mOhm @ 21A, 10V
Gate Charge (Qg) (Max) @ Vgs: 273nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: SP4
товар відсутній
| APTC80A15SCTG |
|
Виробник: Microchip Technology
Description: MOSFET 2N-CH 800V 28A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP4
Description: MOSFET 2N-CH 800V 28A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP4
товар відсутній
| APTC80AM75SCG |
|
Виробник: Microchip Technology
Description: MOSFET 2N-CH 800V 56A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 568W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 56A
Input Capacitance (Ciss) (Max) @ Vds: 9015pF @ 25V
Rds On (Max) @ Id, Vgs: 75mOhm @ 28A, 10V
Gate Charge (Qg) (Max) @ Vgs: 364nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 4mA
Supplier Device Package: SP6
Description: MOSFET 2N-CH 800V 56A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 568W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 56A
Input Capacitance (Ciss) (Max) @ Vds: 9015pF @ 25V
Rds On (Max) @ Id, Vgs: 75mOhm @ 28A, 10V
Gate Charge (Qg) (Max) @ Vgs: 364nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 4mA
Supplier Device Package: SP6
товар відсутній
| APTC80DDA15T3G |
|
Виробник: Microchip Technology
Description: MOSFET 2N-CH 800V 28A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP3
Description: MOSFET 2N-CH 800V 28A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP3
товар відсутній
| APTC80H15T1G |
|
Виробник: Microchip Technology
Description: MOSFET 4N-CH 800V 28A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP1
Description: MOSFET 4N-CH 800V 28A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP1
товар відсутній
| APTC80H15T3G |
|
Виробник: Microchip Technology
Description: MOSFET 4N-CH 800V 28A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP3
Part Status: Active
Description: MOSFET 4N-CH 800V 28A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP3
Part Status: Active
товар відсутній
| APTC80H29SCTG |
|
Виробник: Microchip Technology
Description: MOSFET 4N-CH 800V 15A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 156W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: SP4
Description: MOSFET 4N-CH 800V 15A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 156W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: SP4
товар відсутній
| APTC80H29T3G |
|
Виробник: Microchip Technology
Description: MOSFET 4N-CH 800V 15A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 156W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: SP3
Description: MOSFET 4N-CH 800V 15A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 156W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: SP3
товар відсутній
| APTC80TA15PG |
|
Виробник: Microchip Technology
Description: MOSFET 6N-CH 800V 28A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP6-P
Description: MOSFET 6N-CH 800V 28A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP6-P
товар відсутній
| APTC80TDU15PG |
|
Виробник: Microchip Technology
Description: MOSFET 6N-CH 800V 28A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP6-P
Description: MOSFET 6N-CH 800V 28A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP6-P
товар відсутній
| APTCV40H60CT1G |
|
Виробник: Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
Description: IGBT MODULE 600V 80A 176W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
товар відсутній
| APTCV50H60T3G |
|
Виробник: Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP3
Description: IGBT MODULE 600V 80A 176W SP3
товар відсутній
| APTDF200H60G |
|
Виробник: Microchip Technology
Description: BRIDGE RECT 1PHASE 600V 270A SP6
Description: BRIDGE RECT 1PHASE 600V 270A SP6
на замовлення 34 шт:
термін постачання 21-31 дні (днів)| APTDF30H1201G |
|
Виробник: Microchip Technology
Description: BRIDGE RECT 1PHASE 1.2KV 43A SP1
Description: BRIDGE RECT 1PHASE 1.2KV 43A SP1
товар відсутній
| APTDF400AK120G |
|
Виробник: Microchip Technology
Description: DIODE MODULE 1.2KV 470A SP6
Packaging: Tube
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 385 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 470A
Supplier Device Package: SP6
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 400 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE MODULE 1.2KV 470A SP6
Packaging: Tube
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 385 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 470A
Supplier Device Package: SP6
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 400 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
товар відсутній
| APTDF400KK120G |
|
Виробник: Microchip Technology
Description: DIODE MODULE 1.2KV 470A SP6
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 385 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 470A
Supplier Device Package: SP6
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 400 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE MODULE 1.2KV 470A SP6
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 385 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 470A
Supplier Device Package: SP6
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 400 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 137 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 9739.7 грн |
| 100+ | 7584.42 грн |
| APTDF400KK20G |
|
Виробник: Microchip Technology
Description: DIODE MODULE GP 200V 500A SP6
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 500A
Supplier Device Package: SP6
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 400 A
Current - Reverse Leakage @ Vr: 750 µA @ 200 V
Description: DIODE MODULE GP 200V 500A SP6
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 500A
Supplier Device Package: SP6
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 400 A
Current - Reverse Leakage @ Vr: 750 µA @ 200 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 9241.57 грн |
| APTDF400U120G |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 1.2KV 450A LP4
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Current - Average Rectified (Io): 450A
Supplier Device Package: LP4
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 1200 V
Description: DIODE GEN PURP 1.2KV 450A LP4
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Current - Average Rectified (Io): 450A
Supplier Device Package: LP4
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 1200 V
на замовлення 516 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7550.79 грн |
| 100+ | 4544.26 грн |
| APTDF430U100G |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 500A LP4
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Current - Average Rectified (Io): 500A
Supplier Device Package: LP4
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 500 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 1000 V
Description: DIODE GEN PURP 1KV 500A LP4
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Current - Average Rectified (Io): 500A
Supplier Device Package: LP4
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 500 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 1000 V
товар відсутній