Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (299251) > Сторінка 465 з 4988
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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APTM10UM01FAG | Microchip Technology |
Description: MOSFET N-CH 100V 860A SP6Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 860A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 275A, 10V Power Dissipation (Max): 2500W (Tc) Vgs(th) (Max) @ Id: 4V @ 12mA Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 60000 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| APTM10UM02FAG | Microchip Technology |
Description: MOSFET N-CH 100V 570A SP6 |
товару немає в наявності |
Мінімальне замовлення: 4 шт В кошику од. на суму грн. | |||||||
| APTM120A15FG | Microchip Technology |
Description: MOSFET 2N-CH 1200V 60A SP6 |
товару немає в наявності |
Мінімальне замовлення: 4 шт В кошику од. на суму грн. | |||||||
| APTM120A20DG | Microchip Technology |
Description: MOSFET 2N-CH 1200V 50A SP6 |
товару немає в наявності |
Мінімальне замовлення: 4 шт В кошику од. на суму грн. | |||||||
| APTM120A20SG | Microchip Technology |
Description: MOSFET 2N-CH 1200V 50A SP6 |
товару немає в наявності |
Мінімальне замовлення: 4 шт В кошику од. на суму грн. | |||||||
| APTM120A29FTG | Microchip Technology |
Description: MOSFET 2N-CH 1200V 34A SP4 |
товару немає в наявності |
Мінімальне замовлення: 6 шт В кошику од. на суму грн. | |||||||
| APTM120DA30T1G | Microchip Technology |
Description: MOSFET N-CH 1200V 31A SP1Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 25A, 10V Power Dissipation (Max): 657W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SP1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 15 шт В кошику од. на суму грн. | |||||||
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APTM120DU15G | Microchip Technology |
Description: MOSFET 2N-CH 1200V 60A SP6 |
товару немає в наявності |
Мінімальне замовлення: 4 шт В кошику од. на суму грн. | ||||||
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APTM120H140FT1G | Microchip Technology |
Description: MOSFET 4N-CH 1200V 8A SP1Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 208W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 3812pF @ 25V Rds On (Max) @ Id, Vgs: 1.68Ohm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: SP1 |
товару немає в наявності |
Мінімальне замовлення: 14 шт В кошику од. на суму грн. | ||||||
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APTM120H29FG | Microchip Technology |
Description: MOSFET 4N-CH 1200V 34A SP6Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 780W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 34A Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V Rds On (Max) @ Id, Vgs: 348mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP6 |
товару немає в наявності |
Мінімальне замовлення: 4 шт В кошику од. на суму грн. | ||||||
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APTM120U10SAG | Microchip Technology |
Description: MOSFET N-CH 1200V 116A SP6Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 58A, 10V Power Dissipation (Max): 3290W (Tc) Vgs(th) (Max) @ Id: 5V @ 20mA Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 1100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 4 шт В кошику од. на суму грн. | ||||||
| APTM120UM70DAG | Microchip Technology |
Description: MOSFET N-CH 1200V 171A SP6 |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | |||||||
| APTM120UM70FAG | Microchip Technology |
Description: MOSFET N-CH 1200V 171A SP6 |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | |||||||
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APTM20AM04FG | Microchip Technology |
Description: MOSFET 2N-CH 200V 372A SP6Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1250W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 372A Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V Vgs(th) (Max) @ Id: 5V @ 10mA Supplier Device Package: SP6 Part Status: Active |
на замовлення 19 шт: термін постачання 21-31 дні (днів) |
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| APTM20AM05FG | Microchip Technology |
Description: MOSFET 2N-CH 200V 317A SP6Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1136W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 317A Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V Rds On (Max) @ Id, Vgs: 5mOhm @ 158.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V Vgs(th) (Max) @ Id: 5V @ 10mA Supplier Device Package: SP6 |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||
| APTM20AM06SG | Microchip Technology |
Description: MOSFET 2N-CH 200V 300A SP6Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1250W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 300A Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V Rds On (Max) @ Id, Vgs: 7.2mOhm @ 150A, 10V Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V Vgs(th) (Max) @ Id: 5V @ 6mA Supplier Device Package: SP6 Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||
| APTM20AM08FTG | Microchip Technology |
Description: MOSFET 2N-CH 200V 208A SP4Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 781W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 208A Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP4 |
товару немає в наявності |
Мінімальне замовлення: 7 шт В кошику од. на суму грн. | |||||||
| APTM20AM10FTG | Microchip Technology |
Description: MOSFET 2N-CH 200V 175A SP4Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 694W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 175A Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP4 |
товару немає в наявності |
Мінімальне замовлення: 8 шт В кошику од. на суму грн. | |||||||
| APTM20AM10STG | Microchip Technology |
Description: MOSFET 2N-CH 200V 175A SP4Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 694W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 175A Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP4 |
товару немає в наявності |
Мінімальне замовлення: 7 шт В кошику од. на суму грн. | |||||||
| APTM20DAM04G | Microchip Technology |
Description: MOSFET N-CH 200V 372A SP6Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 372A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 5V @ 10mA Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 6 шт В кошику од. на суму грн. | |||||||
|
APTM20DAM05G | Microchip Technology |
Description: MOSFET N-CH 200V 317A SP6Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 317A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V Power Dissipation (Max): 1136W (Tc) Vgs(th) (Max) @ Id: 5V @ 10mA Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 448 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27400 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 6 шт В кошику од. на суму грн. | ||||||
| APTM20DAM08TG | Microchip Technology |
Description: MOSFET N-CH 200V 208A SP4Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 208A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V Power Dissipation (Max): 781W (Tc) Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP4 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 7 шт В кошику од. на суму грн. | |||||||
|
APTM20DUM04G | Microchip Technology |
Description: MOSFET 2N-CH 200V 372A SP6Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1250W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 372A Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V Vgs(th) (Max) @ Id: 5V @ 10mA Supplier Device Package: SP6 |
товару немає в наявності |
Мінімальне замовлення: 4 шт В кошику од. на суму грн. | ||||||
| APTM20DUM05G | Microchip Technology |
Description: MOSFET 2N-CH 200V 317A SP6Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1136W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 317A Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V Vgs(th) (Max) @ Id: 5V @ 10mA Supplier Device Package: SP6 |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||
| APTM20DUM08TG | Microchip Technology |
Description: MOSFET 2N-CH 200V 208A SP4Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 781W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 208A Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP4 Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 8 шт В кошику од. на суму грн. | |||||||
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APTM20HM08FG | Microchip Technology |
Description: MOSFET 4N-CH 200V 208A SP6Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 781W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 208A Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP6 |
товару немає в наявності |
Мінімальне замовлення: 4 шт В кошику од. на суму грн. | ||||||
| APTM20HM10FG | Microchip Technology |
Description: MOSFET 4N-CH 200V 175A SP6Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 694W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 175A Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP6 |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||
| APTM20HM16FTG | Microchip Technology |
Description: MOSFET 4N-CH 200V 104A SP4Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 390W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 104A Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SP4 |
товару немає в наявності |
Мінімальне замовлення: 7 шт В кошику од. на суму грн. | |||||||
| APTM20HM20FTG | Microchip Technology |
Description: MOSFET 4N-CH 200V 89A SP4Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 357W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 89A Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SP4 |
товару немає в наявності |
Мінімальне замовлення: 8 шт В кошику од. на суму грн. | |||||||
| APTM20HM20STG | Microchip Technology |
Description: MOSFET 4N-CH 200V 89A SP4Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 357W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 89A Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SP4 |
товару немає в наявності |
Мінімальне замовлення: 8 шт В кошику од. на суму грн. | |||||||
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APTM20SKM04G | Microchip Technology |
Description: MOSFET N-CH 200V 372A SP6Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 372A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 5V @ 10mA Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 6 шт В кошику од. на суму грн. | ||||||
| APTM20SKM08TG | Microchip Technology |
Description: MOSFET N-CH 200V 208A SP4Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 208A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V Power Dissipation (Max): 781W (Tc) Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP4 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 7 шт В кошику од. на суму грн. | |||||||
|
APTM20TAM16FPG | Microchip Technology |
Description: MOSFET 6N-CH 200V 104A SP6-PPackaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 390W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 104A Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SP6-P |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||
|
APTM20UM03FAG | Microchip Technology |
Description: MOSFET N-CH 200V 580A SP6Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 580A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 290A, 10V Power Dissipation (Max): 2270W (Tc) Vgs(th) (Max) @ Id: 5V @ 15mA Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 840 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 43300 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 4 шт В кошику од. на суму грн. | ||||||
| APTM20UM04SAG | Microchip Technology |
Description: MOSFET N-CH 200V 417A SP6Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 417A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 208.5A, 10V Power Dissipation (Max): 1560W (Tc) Vgs(th) (Max) @ Id: 5V @ 10mA Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28800 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||
| APTM50AM17FG | Microchip Technology |
Description: MOSFET 2N-CH 500V 180A SP6Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1250W Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 180A Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V Rds On (Max) @ Id, Vgs: 20mOhm @ 90A, 10V Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V Vgs(th) (Max) @ Id: 5V @ 10mA Supplier Device Package: SP6 |
товару немає в наявності |
Мінімальне замовлення: 4 шт В кошику од. на суму грн. | |||||||
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APTM50AM24SG | Microchip Technology |
Description: MOSFET 2N-CH 500V 150A SP6Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1250W Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 150A Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V Rds On (Max) @ Id, Vgs: 28mOhm @ 75A, 10V Gate Charge (Qg) (Max) @ Vgs: 434nC @ 10V Vgs(th) (Max) @ Id: 5V @ 6mA Supplier Device Package: SP6 |
на замовлення 38 шт: термін постачання 21-31 дні (днів) |
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APTM50AM35FTG | Microchip Technology |
Description: MOSFET 2N-CH 500V 99A SP4Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 781W Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 99A Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP4 |
товару немає в наявності |
Мінімальне замовлення: 7 шт В кошику од. на суму грн. | ||||||
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APTM50AM38FTG | Microchip Technology |
Description: MOSFET 2N-CH 500V 90A SP4Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 694W Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 90A Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP4 |
товару немає в наявності |
Мінімальне замовлення: 8 шт В кошику од. на суму грн. | ||||||
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APTM50AM38STG | Microchip Technology |
Description: MOSFET 2N-CH 500V 90A SP4Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 694W Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 90A Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP4 Part Status: Active |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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| APTM50DAM17G | Microchip Technology |
Description: MOSFET N-CH 500V 180A SP6Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 90A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 5V @ 10mA Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 6 шт В кошику од. на суму грн. | |||||||
| APTM50DDAM65T3G | Microchip Technology |
Description: MOSFET 2N-CH 500V 51A SP3Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 390W Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 51A Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SP3 Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 11 шт В кошику од. на суму грн. | |||||||
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APTM50H14FT3G | Microchip Technology |
Description: MOSFET 4N-CH 500V 26A SP3Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 208W Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 26A Input Capacitance (Ciss) (Max) @ Vds: 3259pF @ 25V Rds On (Max) @ Id, Vgs: 168mOhm @ 13A, 10V Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: SP3 Part Status: Active |
на замовлення 13 шт: термін постачання 21-31 дні (днів) |
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| APTM50H15FT1G | Microchip Technology |
Description: MOSFET 4N-CH 500V 25A SP1Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 208W Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 25A Input Capacitance (Ciss) (Max) @ Vds: 5448pF @ 25V Rds On (Max) @ Id, Vgs: 180mOhm @ 21A, 10V Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: SP1 |
товару немає в наявності |
Мінімальне замовлення: 16 шт В кошику од. на суму грн. | |||||||
| APTM50HM35FG | Microchip Technology |
Description: MOSFET 4N-CH 500V 99A SP6Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 781W Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 99A Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP6 |
товару немає в наявності |
Мінімальне замовлення: 4 шт В кошику од. на суму грн. | |||||||
| APTM50HM38FG | Microchip Technology |
Description: MOSFET 4N-CH 500V 90A SP6Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 694W Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 90A Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP6 |
товару немає в наявності |
Мінімальне замовлення: 4 шт В кошику од. на суму грн. | |||||||
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APTM50HM65FT3G | Microchip Technology |
Description: MOSFET 4N-CH 500V 51A SP3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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APTM50HM75STG | Microchip Technology |
Description: MOSFET 4N-CH 500V 46A SP4 |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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| APTM50SKM17G | Microchip Technology |
Description: MOSFET N-CH 500V 180A SP6Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 90A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 5V @ 10mA Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 6 шт В кошику од. на суму грн. | |||||||
| APTM50SKM19G | Microchip Technology |
Description: MOSFET N-CH 500V 163A SP6Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 163A (Tc) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 81.5A, 10V Power Dissipation (Max): 1136W (Tc) Vgs(th) (Max) @ Id: 5V @ 10mA Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 492 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22400 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 6 шт В кошику од. на суму грн. | |||||||
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APTM50TAM65FPG | Microchip Technology |
Description: MOSFET 6N-CH 500V 51A SP6-PPackaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 390W Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 51A Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SP6-P Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||
| APTM50UM13SAG | Microchip Technology |
Description: MOSFET N-CH 500V 335A SP6 |
товару немає в наявності |
Мінімальне замовлення: 4 шт В кошику од. на суму грн. | |||||||
|
MICRF600Z TR | Microchip Technology |
Description: TXRX ISM 902-928MHZ 11.5X14.1MM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
MICRF600Z TR | Microchip Technology |
Description: TXRX ISM 902-928MHZ 11.5X14.1MM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
SW500010 | Microchip Technology |
Description: HI-TECH C PRO FOR PIC10/12/16Packaging: Box For Use With/Related Products: PIC10, PIC12, PIC14, PIC16, PIC16E Type: Compiler Utilized IC / Part: PIC10, PIC12, PIC14, PIC16, PIC16E |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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SW500011 | Microchip Technology |
Description: HI-TECH C PRO FOR PIC32 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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DSPIC30F2023-30I/PTD32 | Microchip Technology |
Description: IC MCU 16BIT 12KB FLASH 44TQFP |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||
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DSPIC30F2020-30I/MMB32 | Microchip Technology |
Description: IC MCU 16BIT 12KB FLASH 28QFNPackaging: Tube Package / Case: 28-VQFN Exposed Pad Mounting Type: Surface Mount Speed: 30 MIPs Program Memory Size: 12KB (4K x 24) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: dsPIC Data Converters: A/D 8x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 28-QFN-S (6x6) Number of I/O: 21 DigiKey Programmable: Not Verified |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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KSZ8842-32MVLI | Microchip Technology |
Description: IC SWITCH ETH 2P 32BIT 128LQFPPackaging: Tray Package / Case: 128-LQFP Function: Switch Interface: Parallel Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.1V ~ 3.5V Current - Supply: 122mA Protocol: Ethernet Standards: 10/100 Base-T/TX PHY Supplier Device Package: 128-LQFP (14x14) DigiKey Programmable: Not Verified |
на замовлення 133 шт: термін постачання 21-31 дні (днів) |
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KSZ8862-16MQL-FX | Microchip Technology |
Description: IC SWITCH ETH 2P 16BIT 128QFPPackaging: Tray Package / Case: 128-BFQFP Function: Switch Interface: Parallel Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.1V ~ 3.5V Current - Supply: 122mA Protocol: Ethernet Standards: 10/100 Base-FL/FX/T/TX/SX PHY Supplier Device Package: 128-PQFP (14x20) DigiKey Programmable: Not Verified |
на замовлення 53 шт: термін постачання 21-31 дні (днів) |
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| APTM10UM01FAG |
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Виробник: Microchip Technology
Description: MOSFET N-CH 100V 860A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 275A, 10V
Power Dissipation (Max): 2500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 12mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 60000 pF @ 25 V
Description: MOSFET N-CH 100V 860A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 275A, 10V
Power Dissipation (Max): 2500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 12mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 60000 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| APTM10UM02FAG |
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Виробник: Microchip Technology
Description: MOSFET N-CH 100V 570A SP6
Description: MOSFET N-CH 100V 570A SP6
товару немає в наявності
Мінімальне замовлення: 4 шт
В кошику
од. на суму грн.
| APTM120A15FG |
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Виробник: Microchip Technology
Description: MOSFET 2N-CH 1200V 60A SP6
Description: MOSFET 2N-CH 1200V 60A SP6
товару немає в наявності
Мінімальне замовлення: 4 шт
В кошику
од. на суму грн.
| APTM120A20DG |
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Виробник: Microchip Technology
Description: MOSFET 2N-CH 1200V 50A SP6
Description: MOSFET 2N-CH 1200V 50A SP6
товару немає в наявності
Мінімальне замовлення: 4 шт
В кошику
од. на суму грн.
| APTM120A20SG |
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Виробник: Microchip Technology
Description: MOSFET 2N-CH 1200V 50A SP6
Description: MOSFET 2N-CH 1200V 50A SP6
товару немає в наявності
Мінімальне замовлення: 4 шт
В кошику
од. на суму грн.
| APTM120A29FTG |
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Виробник: Microchip Technology
Description: MOSFET 2N-CH 1200V 34A SP4
Description: MOSFET 2N-CH 1200V 34A SP4
товару немає в наявності
Мінімальне замовлення: 6 шт
В кошику
од. на суму грн.
| APTM120DA30T1G |
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Виробник: Microchip Technology
Description: MOSFET N-CH 1200V 31A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 25A, 10V
Power Dissipation (Max): 657W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V
Description: MOSFET N-CH 1200V 31A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 25A, 10V
Power Dissipation (Max): 657W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 15 шт
В кошику
од. на суму грн.
| APTM120DU15G |
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Виробник: Microchip Technology
Description: MOSFET 2N-CH 1200V 60A SP6
Description: MOSFET 2N-CH 1200V 60A SP6
товару немає в наявності
Мінімальне замовлення: 4 шт
В кошику
од. на суму грн.
| APTM120H140FT1G |
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Виробник: Microchip Technology
Description: MOSFET 4N-CH 1200V 8A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 3812pF @ 25V
Rds On (Max) @ Id, Vgs: 1.68Ohm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SP1
Description: MOSFET 4N-CH 1200V 8A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 3812pF @ 25V
Rds On (Max) @ Id, Vgs: 1.68Ohm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SP1
товару немає в наявності
Мінімальне замовлення: 14 шт
В кошику
од. на суму грн.
| APTM120H29FG |
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Виробник: Microchip Technology
Description: MOSFET 4N-CH 1200V 34A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 780W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 34A
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
Rds On (Max) @ Id, Vgs: 348mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
Description: MOSFET 4N-CH 1200V 34A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 780W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 34A
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
Rds On (Max) @ Id, Vgs: 348mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
товару немає в наявності
Мінімальне замовлення: 4 шт
В кошику
од. на суму грн.
| APTM120U10SAG |
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Виробник: Microchip Technology
Description: MOSFET N-CH 1200V 116A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 58A, 10V
Power Dissipation (Max): 3290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 20mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 1100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V
Description: MOSFET N-CH 1200V 116A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 58A, 10V
Power Dissipation (Max): 3290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 20mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 1100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 4 шт
В кошику
од. на суму грн.
| APTM120UM70DAG |
![]() |
Виробник: Microchip Technology
Description: MOSFET N-CH 1200V 171A SP6
Description: MOSFET N-CH 1200V 171A SP6
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| APTM120UM70FAG |
![]() |
Виробник: Microchip Technology
Description: MOSFET N-CH 1200V 171A SP6
Description: MOSFET N-CH 1200V 171A SP6
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| APTM20AM04FG |
![]() |
Виробник: Microchip Technology
Description: MOSFET 2N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 372A
Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Part Status: Active
Description: MOSFET 2N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 372A
Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Part Status: Active
на замовлення 19 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 17293.65 грн |
| APTM20AM05FG |
![]() |
Виробник: Microchip Technology
Description: MOSFET 2N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1136W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 317A
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 158.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Description: MOSFET 2N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1136W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 317A
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 158.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| APTM20AM06SG |
![]() |
Виробник: Microchip Technology
Description: MOSFET 2N-CH 200V 300A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 300A
Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 150A, 10V
Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Supplier Device Package: SP6
Part Status: Active
Description: MOSFET 2N-CH 200V 300A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 300A
Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 150A, 10V
Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Supplier Device Package: SP6
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| APTM20AM08FTG |
![]() |
Виробник: Microchip Technology
Description: MOSFET 2N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Description: MOSFET 2N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
товару немає в наявності
Мінімальне замовлення: 7 шт
В кошику
од. на суму грн.
| APTM20AM10FTG |
![]() |
Виробник: Microchip Technology
Description: MOSFET 2N-CH 200V 175A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 175A
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Description: MOSFET 2N-CH 200V 175A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 175A
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
товару немає в наявності
Мінімальне замовлення: 8 шт
В кошику
од. на суму грн.
| APTM20AM10STG |
![]() |
Виробник: Microchip Technology
Description: MOSFET 2N-CH 200V 175A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 175A
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Description: MOSFET 2N-CH 200V 175A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 175A
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
товару немає в наявності
Мінімальне замовлення: 7 шт
В кошику
од. на суму грн.
| APTM20DAM04G |
![]() |
Виробник: Microchip Technology
Description: MOSFET N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 372A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V
Description: MOSFET N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 372A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 6 шт
В кошику
од. на суму грн.
| APTM20DAM05G |
![]() |
Виробник: Microchip Technology
Description: MOSFET N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 317A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V
Power Dissipation (Max): 1136W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 448 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27400 pF @ 25 V
Description: MOSFET N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 317A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V
Power Dissipation (Max): 1136W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 448 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27400 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 6 шт
В кошику
од. на суму грн.
| APTM20DAM08TG |
![]() |
Виробник: Microchip Technology
Description: MOSFET N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 208A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Power Dissipation (Max): 781W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
Description: MOSFET N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 208A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Power Dissipation (Max): 781W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 7 шт
В кошику
од. на суму грн.
| APTM20DUM04G |
![]() |
Виробник: Microchip Technology
Description: MOSFET 2N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 372A
Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Description: MOSFET 2N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 372A
Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
товару немає в наявності
Мінімальне замовлення: 4 шт
В кошику
од. на суму грн.
| APTM20DUM05G |
![]() |
Виробник: Microchip Technology
Description: MOSFET 2N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1136W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 317A
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Description: MOSFET 2N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1136W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 317A
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| APTM20DUM08TG |
![]() |
Виробник: Microchip Technology
Description: MOSFET 2N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Part Status: Active
Description: MOSFET 2N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 8 шт
В кошику
од. на суму грн.
| APTM20HM08FG |
![]() |
Виробник: Microchip Technology
Description: MOSFET 4N-CH 200V 208A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
Description: MOSFET 4N-CH 200V 208A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
товару немає в наявності
Мінімальне замовлення: 4 шт
В кошику
од. на суму грн.
| APTM20HM10FG |
![]() |
Виробник: Microchip Technology
Description: MOSFET 4N-CH 200V 175A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 175A
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
Description: MOSFET 4N-CH 200V 175A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 175A
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| APTM20HM16FTG |
![]() |
Виробник: Microchip Technology
Description: MOSFET 4N-CH 200V 104A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 104A
Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Description: MOSFET 4N-CH 200V 104A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 104A
Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
товару немає в наявності
Мінімальне замовлення: 7 шт
В кошику
од. на суму грн.
| APTM20HM20FTG |
![]() |
Виробник: Microchip Technology
Description: MOSFET 4N-CH 200V 89A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 89A
Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Description: MOSFET 4N-CH 200V 89A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 89A
Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
товару немає в наявності
Мінімальне замовлення: 8 шт
В кошику
од. на суму грн.
| APTM20HM20STG |
![]() |
Виробник: Microchip Technology
Description: MOSFET 4N-CH 200V 89A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 89A
Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Description: MOSFET 4N-CH 200V 89A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 89A
Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
товару немає в наявності
Мінімальне замовлення: 8 шт
В кошику
од. на суму грн.
| APTM20SKM04G |
![]() |
Виробник: Microchip Technology
Description: MOSFET N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 372A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V
Description: MOSFET N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 372A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 6 шт
В кошику
од. на суму грн.
| APTM20SKM08TG |
![]() |
Виробник: Microchip Technology
Description: MOSFET N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 208A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Power Dissipation (Max): 781W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
Description: MOSFET N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 208A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Power Dissipation (Max): 781W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 7 шт
В кошику
од. на суму грн.
| APTM20TAM16FPG |
![]() |
Виробник: Microchip Technology
Description: MOSFET 6N-CH 200V 104A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 104A
Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP6-P
Description: MOSFET 6N-CH 200V 104A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 104A
Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP6-P
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| APTM20UM03FAG |
![]() |
Виробник: Microchip Technology
Description: MOSFET N-CH 200V 580A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 580A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 290A, 10V
Power Dissipation (Max): 2270W (Tc)
Vgs(th) (Max) @ Id: 5V @ 15mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 840 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43300 pF @ 25 V
Description: MOSFET N-CH 200V 580A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 580A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 290A, 10V
Power Dissipation (Max): 2270W (Tc)
Vgs(th) (Max) @ Id: 5V @ 15mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 840 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43300 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 4 шт
В кошику
од. на суму грн.
| APTM20UM04SAG |
![]() |
Виробник: Microchip Technology
Description: MOSFET N-CH 200V 417A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 417A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 208.5A, 10V
Power Dissipation (Max): 1560W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28800 pF @ 25 V
Description: MOSFET N-CH 200V 417A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 417A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 208.5A, 10V
Power Dissipation (Max): 1560W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28800 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| APTM50AM17FG |
![]() |
Виробник: Microchip Technology
Description: MOSFET 2N-CH 500V 180A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 180A
Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 90A, 10V
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Description: MOSFET 2N-CH 500V 180A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 180A
Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 90A, 10V
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
товару немає в наявності
Мінімальне замовлення: 4 шт
В кошику
од. на суму грн.
| APTM50AM24SG |
![]() |
Виробник: Microchip Technology
Description: MOSFET 2N-CH 500V 150A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V
Rds On (Max) @ Id, Vgs: 28mOhm @ 75A, 10V
Gate Charge (Qg) (Max) @ Vgs: 434nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Supplier Device Package: SP6
Description: MOSFET 2N-CH 500V 150A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V
Rds On (Max) @ Id, Vgs: 28mOhm @ 75A, 10V
Gate Charge (Qg) (Max) @ Vgs: 434nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Supplier Device Package: SP6
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 14522.36 грн |
| APTM50AM35FTG |
![]() |
Виробник: Microchip Technology
Description: MOSFET 2N-CH 500V 99A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 99A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Description: MOSFET 2N-CH 500V 99A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 99A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
товару немає в наявності
Мінімальне замовлення: 7 шт
В кошику
од. на суму грн.
| APTM50AM38FTG |
![]() |
Виробник: Microchip Technology
Description: MOSFET 2N-CH 500V 90A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 90A
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Description: MOSFET 2N-CH 500V 90A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 90A
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
товару немає в наявності
Мінімальне замовлення: 8 шт
В кошику
од. на суму грн.
| APTM50AM38STG |
![]() |
Виробник: Microchip Technology
Description: MOSFET 2N-CH 500V 90A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 90A
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Part Status: Active
Description: MOSFET 2N-CH 500V 90A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 90A
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Part Status: Active
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 13919.01 грн |
| APTM50DAM17G |
![]() |
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 180A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 90A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Description: MOSFET N-CH 500V 180A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 90A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 6 шт
В кошику
од. на суму грн.
| APTM50DDAM65T3G |
![]() |
Виробник: Microchip Technology
Description: MOSFET 2N-CH 500V 51A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 51A
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP3
Part Status: Active
Description: MOSFET 2N-CH 500V 51A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 51A
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP3
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 11 шт
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| APTM50H14FT3G |
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Виробник: Microchip Technology
Description: MOSFET 4N-CH 500V 26A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 26A
Input Capacitance (Ciss) (Max) @ Vds: 3259pF @ 25V
Rds On (Max) @ Id, Vgs: 168mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SP3
Part Status: Active
Description: MOSFET 4N-CH 500V 26A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 26A
Input Capacitance (Ciss) (Max) @ Vds: 3259pF @ 25V
Rds On (Max) @ Id, Vgs: 168mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SP3
Part Status: Active
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7035.12 грн |
| APTM50H15FT1G |
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Виробник: Microchip Technology
Description: MOSFET 4N-CH 500V 25A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 5448pF @ 25V
Rds On (Max) @ Id, Vgs: 180mOhm @ 21A, 10V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SP1
Description: MOSFET 4N-CH 500V 25A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 5448pF @ 25V
Rds On (Max) @ Id, Vgs: 180mOhm @ 21A, 10V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SP1
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Мінімальне замовлення: 16 шт
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| APTM50HM35FG |
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Виробник: Microchip Technology
Description: MOSFET 4N-CH 500V 99A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 99A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
Description: MOSFET 4N-CH 500V 99A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 99A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
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Мінімальне замовлення: 4 шт
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| APTM50HM38FG |
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Виробник: Microchip Technology
Description: MOSFET 4N-CH 500V 90A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 90A
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
Description: MOSFET 4N-CH 500V 90A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 90A
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
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Мінімальне замовлення: 4 шт
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| APTM50HM65FT3G |
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Виробник: Microchip Technology
Description: MOSFET 4N-CH 500V 51A SP3
Description: MOSFET 4N-CH 500V 51A SP3
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| APTM50HM75STG |
![]() |
Виробник: Microchip Technology
Description: MOSFET 4N-CH 500V 46A SP4
Description: MOSFET 4N-CH 500V 46A SP4
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 12717.06 грн |
| APTM50SKM17G |
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Виробник: Microchip Technology
Description: MOSFET N-CH 500V 180A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 90A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Description: MOSFET N-CH 500V 180A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 90A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 6 шт
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| APTM50SKM19G |
![]() |
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 163A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 163A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 81.5A, 10V
Power Dissipation (Max): 1136W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 492 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22400 pF @ 25 V
Description: MOSFET N-CH 500V 163A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 163A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 81.5A, 10V
Power Dissipation (Max): 1136W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 492 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22400 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 6 шт
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| APTM50TAM65FPG |
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Виробник: Microchip Technology
Description: MOSFET 6N-CH 500V 51A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 51A
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP6-P
Part Status: Active
Description: MOSFET 6N-CH 500V 51A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 51A
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP6-P
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 10 шт
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| APTM50UM13SAG |
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Виробник: Microchip Technology
Description: MOSFET N-CH 500V 335A SP6
Description: MOSFET N-CH 500V 335A SP6
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Мінімальне замовлення: 4 шт
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| MICRF600Z TR |
![]() |
Виробник: Microchip Technology
Description: TXRX ISM 902-928MHZ 11.5X14.1MM
Description: TXRX ISM 902-928MHZ 11.5X14.1MM
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| MICRF600Z TR |
![]() |
Виробник: Microchip Technology
Description: TXRX ISM 902-928MHZ 11.5X14.1MM
Description: TXRX ISM 902-928MHZ 11.5X14.1MM
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| SW500010 |
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Виробник: Microchip Technology
Description: HI-TECH C PRO FOR PIC10/12/16
Packaging: Box
For Use With/Related Products: PIC10, PIC12, PIC14, PIC16, PIC16E
Type: Compiler
Utilized IC / Part: PIC10, PIC12, PIC14, PIC16, PIC16E
Description: HI-TECH C PRO FOR PIC10/12/16
Packaging: Box
For Use With/Related Products: PIC10, PIC12, PIC14, PIC16, PIC16E
Type: Compiler
Utilized IC / Part: PIC10, PIC12, PIC14, PIC16, PIC16E
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| SW500011 |
![]() |
Виробник: Microchip Technology
Description: HI-TECH C PRO FOR PIC32
Description: HI-TECH C PRO FOR PIC32
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| DSPIC30F2023-30I/PTD32 |
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Виробник: Microchip Technology
Description: IC MCU 16BIT 12KB FLASH 44TQFP
Description: IC MCU 16BIT 12KB FLASH 44TQFP
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| DSPIC30F2020-30I/MMB32 |
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Виробник: Microchip Technology
Description: IC MCU 16BIT 12KB FLASH 28QFN
Packaging: Tube
Package / Case: 28-VQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 30 MIPs
Program Memory Size: 12KB (4K x 24)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-QFN-S (6x6)
Number of I/O: 21
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 12KB FLASH 28QFN
Packaging: Tube
Package / Case: 28-VQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 30 MIPs
Program Memory Size: 12KB (4K x 24)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-QFN-S (6x6)
Number of I/O: 21
DigiKey Programmable: Not Verified
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 541.59 грн |
| 10+ | 432.32 грн |
| KSZ8842-32MVLI |
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Виробник: Microchip Technology
Description: IC SWITCH ETH 2P 32BIT 128LQFP
Packaging: Tray
Package / Case: 128-LQFP
Function: Switch
Interface: Parallel
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.1V ~ 3.5V
Current - Supply: 122mA
Protocol: Ethernet
Standards: 10/100 Base-T/TX PHY
Supplier Device Package: 128-LQFP (14x14)
DigiKey Programmable: Not Verified
Description: IC SWITCH ETH 2P 32BIT 128LQFP
Packaging: Tray
Package / Case: 128-LQFP
Function: Switch
Interface: Parallel
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.1V ~ 3.5V
Current - Supply: 122mA
Protocol: Ethernet
Standards: 10/100 Base-T/TX PHY
Supplier Device Package: 128-LQFP (14x14)
DigiKey Programmable: Not Verified
на замовлення 133 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1670.69 грн |
| 25+ | 1341.22 грн |
| 100+ | 1294.86 грн |
| KSZ8862-16MQL-FX |
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Виробник: Microchip Technology
Description: IC SWITCH ETH 2P 16BIT 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Function: Switch
Interface: Parallel
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.1V ~ 3.5V
Current - Supply: 122mA
Protocol: Ethernet
Standards: 10/100 Base-FL/FX/T/TX/SX PHY
Supplier Device Package: 128-PQFP (14x20)
DigiKey Programmable: Not Verified
Description: IC SWITCH ETH 2P 16BIT 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Function: Switch
Interface: Parallel
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.1V ~ 3.5V
Current - Supply: 122mA
Protocol: Ethernet
Standards: 10/100 Base-FL/FX/T/TX/SX PHY
Supplier Device Package: 128-PQFP (14x20)
DigiKey Programmable: Not Verified
на замовлення 53 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1557.47 грн |
| 25+ | 1249.26 грн |



















