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AT90CAN32-15AZ AT90CAN32-15AZ Microchip Technology doc7682.pdf Description: IC MCU 8BIT 32KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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AT90CAN32-16AUR AT90CAN32-16AUR Microchip Technology 7679S.pdf Description: IC MCU 8BIT 32KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Verified
на замовлення 1040 шт:
термін постачання 21-31 дні (днів)
1000+419.85 грн
Мінімальне замовлення: 1000
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AT90CAN64-15AT AT90CAN64-15AT Microchip Technology doc7682.pdf Description: IC MCU 8BIT 64KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Verified
Grade: Automotive
Qualification: AEC-Q100
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AT90CAN64-15AT1 AT90CAN64-15AT1 Microchip Technology doc7682.pdf Description: IC MCU 8BIT 64KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Grade: Automotive
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Verified
Qualification: AEC-Q100
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AT90CAN64-15AZ AT90CAN64-15AZ Microchip Technology doc7682.pdf Description: IC MCU 8BIT 64KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Grade: Automotive
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Verified
Qualification: AEC-Q100
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AT90CAN64-15MT AT90CAN64-15MT Microchip Technology doc7682.pdf Description: IC MCU 8BIT 64KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Grade: Automotive
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Verified
Qualification: AEC-Q100
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AT90CAN64-15MT1 AT90CAN64-15MT1 Microchip Technology doc7682.pdf Description: IC MCU 8BIT 64KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Grade: Automotive
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Verified
Qualification: AEC-Q100
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AT90CAN64-15MZ AT90CAN64-15MZ Microchip Technology doc7682.pdf Description: IC MCU 8BIT 64KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Grade: Automotive
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Verified
Qualification: AEC-Q100
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ATA556714N-DDB Microchip Technology ATA5567.pdf Description: IC RFID TRANSP 100-150KHZ
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ATA556714N-DDT Microchip Technology ATA5567.pdf Description: IC RFID TRANSP 100-150KHZ
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ATA556715-PAE Microchip Technology ATA5567.pdf Description: IC RFID TRANSP 100-150KHZ NOA3
Packaging: Bulk
Package / Case: NOA3 Micromodule
Mounting Type: Surface Mount
Frequency: 100kHz ~ 150kHz
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.2V ~ 4.8V
Standards: ISO 11784, ISO 11785
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APT30GF60JU2 APT30GF60JU2 Microchip Technology APT30GF60JU2.pdf Description: IGBT MODULE 600V 58A 192W SOT227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 192 W
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 1.85 nF @ 25 V
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APT30GF60JU3 APT30GF60JU3 Microchip Technology APT30GF60JU3.pdf Description: IGBT MODULE 600V 58A 192W ISOTOP
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: NPT
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 192 W
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 1.85 nF @ 25 V
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APT35GT120JU2 APT35GT120JU2 Microchip Technology 6970-apt35gt120ju2-datasheet Description: IGBT MOD 1200V 55A 260W SOT227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 260 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.53 nF @ 25 V
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APT35GT120JU3 APT35GT120JU3 Microchip Technology 6971-apt35gt120ju3-datasheet Description: IGBT MOD 1200V 55A 260W SOT227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 260 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.53 nF @ 25 V
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APT40N60JCU2 APT40N60JCU2 Microchip Technology 7016-apt40n60jcu2-datasheet Description: MOSFET N-CH 600V 40A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
1+2058.62 грн
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APT40N60JCU3 APT40N60JCU3 Microchip Technology 7017-apt40n60jcu3-datasheet Description: MOSFET N-CH 600V 40A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
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APT5010JLLU2 APT5010JLLU2 Microchip Technology 7076-apt5010jllu2-datasheet Description: MOSFET N-CH 500V 41A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Power Dissipation (Max): 378W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
1+2167.29 грн
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APT5010JLLU3 APT5010JLLU3 Microchip Technology 7077-apt5010jllu3-datasheet Description: MOSFET N-CH 500V 41A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Power Dissipation (Max): 378W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
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APT5010JVRU2 APT5010JVRU2 Microchip Technology 7078-apt5010jvru2-datasheet Description: MOSFET N-CH 500V 44A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 22A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 312 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7410 pF @ 25 V
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
1+2595.00 грн
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APT5010JVRU3 APT5010JVRU3 Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 500V 44A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 22A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 312 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7410 pF @ 25 V
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APT50GF60JU2 APT50GF60JU2 Microchip Technology APT50GF60JU2.pdf Description: IGBT MODULE 600V 75A 277W SOT227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 277 W
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.25 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+2343.50 грн
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APT50GT120JU2 APT50GT120JU2 Microchip Technology 7110-apt50gt120ju2-datasheet Description: IGBT MOD 1200V 75A 347W SOT227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 347 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
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APT50GT120JU3 APT50GT120JU3 Microchip Technology 7111-apt50gt120ju3-datasheet Description: IGBT MOD 1200V 75A 347W SOT227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 347 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
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APT50M75JLLU2 APT50M75JLLU2 Microchip Technology 7118-apt50m75jllu2-datasheet Description: MOSFET N-CH 500V 51A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
1+2490.99 грн
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APT50M75JLLU3 APT50M75JLLU3 Microchip Technology APT50M75JLLU3.pdf Description: MOSFET N-CH 500V 51A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
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APT50N60JCCU2 APT50N60JCCU2 Microchip Technology 7123-apt50n60jccu2-datasheet Description: MOSFET N-CH 600V 50A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
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APT75GT120JU2 APT75GT120JU2 Microchip Technology 7249-apt75gt120ju2-datasheet Description: IGBT MOD 1200V 100A 416W SOT227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 416 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
1+2400.94 грн
100+1926.72 грн
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APT75GT120JU3 APT75GT120JU3 Microchip Technology 7250-apt75gt120ju3-datasheet Description: IGBT MOD 1200V 100A 416W SOT227
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APTC60AM18SCG APTC60AM18SCG Microchip Technology 7319-aptc60am18scg-datasheet Description: MOSFET 2N-CH 600V 143A SP6
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APTC60AM35SCTG APTC60AM35SCTG Microchip Technology 7322-aptc60am35sctg-datasheet Description: MOSFET 2N-CH 600V 72A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 36A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP4
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APTC60AM35T1G Microchip Technology 7323-aptc60am35t1g-datasheet Description: MOSFET 2N-CH 600V 72A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP1
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APTC60AM45T1G Microchip Technology 7324-aptc60am45t1g-datasheet Description: MOSFET 2N-CH 600V 49A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 49A
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: SP1
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APTC60DAM18CTG APTC60DAM18CTG Microchip Technology 7326-aptc60dam18ctg-datasheet Description: MOSFET N-CH 600V 143A SP4
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APTC60DDAM35T3G APTC60DDAM35T3G Microchip Technology 7331-aptc60ddam35t3g-datasheet Description: MOSFET 2N-CH 600V 72A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP3
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APTC60HM35T3G APTC60HM35T3G Microchip Technology 7348-aptc60hm35t3g-datasheet Description: MOSFET 4N-CH 600V 72A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP3
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APTC60HM45T1G Microchip Technology 7350-aptc60hm45t1g-datasheet Description: MOSFET 4N-CH 600V 49A SP1
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APTC60SKM24T1G APTC60SKM24T1G Microchip Technology 7355-aptc60skm24t1g-datasheet Description: MOSFET N-CH 600V 95A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SP1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
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APTC60TAM35PG APTC60TAM35PG Microchip Technology 7358-aptc60tam35pg-datasheet Description: MOSFET 6N-CH 600V 72A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP6-P
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APTC60TDUM35PG APTC60TDUM35PG Microchip Technology 7360-aptc60tdum35pg-datasheet Description: MOSFET 6N-CH 600V 72A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP6-P
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APTC80A10SCTG Microchip Technology 7363-aptc80a10sctg-datasheet Description: MOSFET 2N-CH 800V 42A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 42A
Input Capacitance (Ciss) (Max) @ Vds: 6761pF @ 25V
Rds On (Max) @ Id, Vgs: 100mOhm @ 21A, 10V
Gate Charge (Qg) (Max) @ Vgs: 273nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: SP4
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APTC80A15SCTG Microchip Technology 7364-aptc80a15sctg-datasheet Description: MOSFET 2N-CH 800V 28A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP4
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APTC80AM75SCG Microchip Technology 7366-aptc80am75scg-datasheet Description: MOSFET 2N-CH 800V 56A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 568W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 56A
Input Capacitance (Ciss) (Max) @ Vds: 9015pF @ 25V
Rds On (Max) @ Id, Vgs: 75mOhm @ 28A, 10V
Gate Charge (Qg) (Max) @ Vgs: 364nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 4mA
Supplier Device Package: SP6
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APTC80DDA15T3G Microchip Technology 7368-aptc80dda15t3g-datasheet Description: MOSFET 2N-CH 800V 28A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP3
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APTC80H15T1G Microchip Technology 7372-aptc80h15t1g-rev1-pdf Description: MOSFET 4N-CH 800V 28A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP1
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APTC80H15T3G Microchip Technology 7373-aptc80h15t3g-datasheet Description: MOSFET 4N-CH 800V 28A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP3
Part Status: Active
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APTC80H29SCTG Microchip Technology 7374-aptc80h29sctg-datasheet Description: MOSFET 4N-CH 800V 15A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 156W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: SP4
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APTC80H29T3G Microchip Technology 7376-aptc80h29t3g-datasheet Description: MOSFET 4N-CH 800V 15A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 156W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: SP3
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APTC80TA15PG APTC80TA15PG Microchip Technology 7378-aptc80ta15pg-datasheet Description: MOSFET 6N-CH 800V 28A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP6-P
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APTC80TDU15PG APTC80TDU15PG Microchip Technology 7379-aptc80tdu15pg-datasheet Description: MOSFET 6N-CH 800V 28A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP6-P
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APTCV40H60CT1G Microchip Technology 7398-aptcv40h60ct1g-datasheet Description: IGBT MODULE 600V 80A 176W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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APTCV50H60T3G Microchip Technology 7399-aptcv50h60t3g-datasheet Description: IGBT MODULE 600V 80A 176W SP3
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APTDF200H60G APTDF200H60G Microchip Technology 7426-aptdf200h60g-datasheet Description: BRIDGE RECT 1PHASE 600V 270A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: SP6
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 270 A
Voltage - Forward (Vf) (Max) @ If: 2 V @ 200 A
Current - Reverse Leakage @ Vr: 350 µA @ 600 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
1+9841.30 грн
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APTDF30H1201G Microchip Technology 7427-aptdf30h1201g-datasheet Description: BRIDGE RECT 1PHASE 1.2KV 43A SP1
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APTDF400AK100G Microchip Technology 7435-aptdf400ak100g-datasheet Description: DIODE MODULE GP 1000V 500A SP6
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 290 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 500A
Supplier Device Package: SP6
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 400 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
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APTDF400AK120G APTDF400AK120G Microchip Technology 7436-aptdf400ak120g-datasheet Description: DIODE MODULE 1.2KV 470A SP6
Packaging: Tube
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 385 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 470A
Supplier Device Package: SP6
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 400 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
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APTDF400KK120G APTDF400KK120G Microchip Technology 7441-aptdf400kk120g-datasheet Description: DIODE MODULE GP 1200V 470A SP6
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 385 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 470A
Supplier Device Package: SP6
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 400 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 39 шт:
термін постачання 21-31 дні (днів)
1+10621.43 грн
25+7305.71 грн
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APTDF400KK20G APTDF400KK20G Microchip Technology 7443-aptdf400kk20g-datasheet Description: DIODE MODULE GP 200V 500A SP6
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 500A
Supplier Device Package: SP6
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 400 A
Current - Reverse Leakage @ Vr: 750 µA @ 200 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
1+10123.85 грн
25+6963.50 грн
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APTDF400U120G APTDF400U120G Microchip Technology 7445-aptdf400u120g-datasheet Description: DIODE GEN PURP 1.2KV 450A LP4
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Current - Average Rectified (Io): 450A
Supplier Device Package: LP4
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 1200 V
на замовлення 516 шт:
термін постачання 21-31 дні (днів)
1+8177.79 грн
100+4921.61 грн
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APTDF430U100G APTDF430U100G Microchip Technology 7446-aptdf430u100g-datasheet Description: DIODE GEN PURP 1KV 500A LP4
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Current - Average Rectified (Io): 500A
Supplier Device Package: LP4
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 500 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 1000 V
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AT90CAN32-15AZ doc7682.pdf
AT90CAN32-15AZ
Виробник: Microchip Technology
Description: IC MCU 8BIT 32KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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AT90CAN32-16AUR 7679S.pdf
AT90CAN32-16AUR
Виробник: Microchip Technology
Description: IC MCU 8BIT 32KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Verified
на замовлення 1040 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+419.85 грн
Мінімальне замовлення: 1000
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AT90CAN64-15AT doc7682.pdf
AT90CAN64-15AT
Виробник: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Verified
Grade: Automotive
Qualification: AEC-Q100
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AT90CAN64-15AT1 doc7682.pdf
AT90CAN64-15AT1
Виробник: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Grade: Automotive
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Verified
Qualification: AEC-Q100
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AT90CAN64-15AZ doc7682.pdf
AT90CAN64-15AZ
Виробник: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Grade: Automotive
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Verified
Qualification: AEC-Q100
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AT90CAN64-15MT doc7682.pdf
AT90CAN64-15MT
Виробник: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Grade: Automotive
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Verified
Qualification: AEC-Q100
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AT90CAN64-15MT1 doc7682.pdf
AT90CAN64-15MT1
Виробник: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Grade: Automotive
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Verified
Qualification: AEC-Q100
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AT90CAN64-15MZ doc7682.pdf
AT90CAN64-15MZ
Виробник: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Grade: Automotive
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Verified
Qualification: AEC-Q100
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ATA556714N-DDB ATA5567.pdf
Виробник: Microchip Technology
Description: IC RFID TRANSP 100-150KHZ
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ATA556714N-DDT ATA5567.pdf
Виробник: Microchip Technology
Description: IC RFID TRANSP 100-150KHZ
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ATA556715-PAE ATA5567.pdf
Виробник: Microchip Technology
Description: IC RFID TRANSP 100-150KHZ NOA3
Packaging: Bulk
Package / Case: NOA3 Micromodule
Mounting Type: Surface Mount
Frequency: 100kHz ~ 150kHz
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.2V ~ 4.8V
Standards: ISO 11784, ISO 11785
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APT30GF60JU2 APT30GF60JU2.pdf
APT30GF60JU2
Виробник: Microchip Technology
Description: IGBT MODULE 600V 58A 192W SOT227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 192 W
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 1.85 nF @ 25 V
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APT30GF60JU3 APT30GF60JU3.pdf
APT30GF60JU3
Виробник: Microchip Technology
Description: IGBT MODULE 600V 58A 192W ISOTOP
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: NPT
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 192 W
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 1.85 nF @ 25 V
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APT35GT120JU2 6970-apt35gt120ju2-datasheet
APT35GT120JU2
Виробник: Microchip Technology
Description: IGBT MOD 1200V 55A 260W SOT227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 260 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.53 nF @ 25 V
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APT35GT120JU3 6971-apt35gt120ju3-datasheet
APT35GT120JU3
Виробник: Microchip Technology
Description: IGBT MOD 1200V 55A 260W SOT227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 260 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.53 nF @ 25 V
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APT40N60JCU2 7016-apt40n60jcu2-datasheet
APT40N60JCU2
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 40A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2058.62 грн
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APT40N60JCU3 7017-apt40n60jcu3-datasheet
APT40N60JCU3
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 40A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
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APT5010JLLU2 7076-apt5010jllu2-datasheet
APT5010JLLU2
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 41A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Power Dissipation (Max): 378W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2167.29 грн
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APT5010JLLU3 7077-apt5010jllu3-datasheet
APT5010JLLU3
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 41A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Power Dissipation (Max): 378W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
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APT5010JVRU2 7078-apt5010jvru2-datasheet
APT5010JVRU2
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 44A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 22A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 312 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7410 pF @ 25 V
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2595.00 грн
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APT5010JVRU3 High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT5010JVRU3
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 44A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 22A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 312 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7410 pF @ 25 V
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APT50GF60JU2 APT50GF60JU2.pdf
APT50GF60JU2
Виробник: Microchip Technology
Description: IGBT MODULE 600V 75A 277W SOT227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 277 W
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.25 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2343.50 грн
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APT50GT120JU2 7110-apt50gt120ju2-datasheet
APT50GT120JU2
Виробник: Microchip Technology
Description: IGBT MOD 1200V 75A 347W SOT227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 347 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
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APT50GT120JU3 7111-apt50gt120ju3-datasheet
APT50GT120JU3
Виробник: Microchip Technology
Description: IGBT MOD 1200V 75A 347W SOT227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 347 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
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APT50M75JLLU2 7118-apt50m75jllu2-datasheet
APT50M75JLLU2
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 51A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2490.99 грн
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APT50M75JLLU3 APT50M75JLLU3.pdf
APT50M75JLLU3
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 51A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
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APT50N60JCCU2 7123-apt50n60jccu2-datasheet
APT50N60JCCU2
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 50A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
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APT75GT120JU2 7249-apt75gt120ju2-datasheet
APT75GT120JU2
Виробник: Microchip Technology
Description: IGBT MOD 1200V 100A 416W SOT227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 416 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2400.94 грн
100+1926.72 грн
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APT75GT120JU3 7250-apt75gt120ju3-datasheet
APT75GT120JU3
Виробник: Microchip Technology
Description: IGBT MOD 1200V 100A 416W SOT227
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APTC60AM18SCG 7319-aptc60am18scg-datasheet
APTC60AM18SCG
Виробник: Microchip Technology
Description: MOSFET 2N-CH 600V 143A SP6
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APTC60AM35SCTG 7322-aptc60am35sctg-datasheet
APTC60AM35SCTG
Виробник: Microchip Technology
Description: MOSFET 2N-CH 600V 72A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 36A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP4
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APTC60AM35T1G 7323-aptc60am35t1g-datasheet
Виробник: Microchip Technology
Description: MOSFET 2N-CH 600V 72A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP1
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APTC60AM45T1G 7324-aptc60am45t1g-datasheet
Виробник: Microchip Technology
Description: MOSFET 2N-CH 600V 49A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 49A
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: SP1
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APTC60DAM18CTG 7326-aptc60dam18ctg-datasheet
APTC60DAM18CTG
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 143A SP4
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APTC60DDAM35T3G 7331-aptc60ddam35t3g-datasheet
APTC60DDAM35T3G
Виробник: Microchip Technology
Description: MOSFET 2N-CH 600V 72A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP3
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APTC60HM35T3G 7348-aptc60hm35t3g-datasheet
APTC60HM35T3G
Виробник: Microchip Technology
Description: MOSFET 4N-CH 600V 72A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP3
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APTC60HM45T1G 7350-aptc60hm45t1g-datasheet
Виробник: Microchip Technology
Description: MOSFET 4N-CH 600V 49A SP1
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APTC60SKM24T1G 7355-aptc60skm24t1g-datasheet
APTC60SKM24T1G
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 95A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SP1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
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APTC60TAM35PG 7358-aptc60tam35pg-datasheet
APTC60TAM35PG
Виробник: Microchip Technology
Description: MOSFET 6N-CH 600V 72A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP6-P
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APTC60TDUM35PG 7360-aptc60tdum35pg-datasheet
APTC60TDUM35PG
Виробник: Microchip Technology
Description: MOSFET 6N-CH 600V 72A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP6-P
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APTC80A10SCTG 7363-aptc80a10sctg-datasheet
Виробник: Microchip Technology
Description: MOSFET 2N-CH 800V 42A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 42A
Input Capacitance (Ciss) (Max) @ Vds: 6761pF @ 25V
Rds On (Max) @ Id, Vgs: 100mOhm @ 21A, 10V
Gate Charge (Qg) (Max) @ Vgs: 273nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: SP4
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APTC80A15SCTG 7364-aptc80a15sctg-datasheet
Виробник: Microchip Technology
Description: MOSFET 2N-CH 800V 28A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP4
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APTC80AM75SCG 7366-aptc80am75scg-datasheet
Виробник: Microchip Technology
Description: MOSFET 2N-CH 800V 56A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 568W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 56A
Input Capacitance (Ciss) (Max) @ Vds: 9015pF @ 25V
Rds On (Max) @ Id, Vgs: 75mOhm @ 28A, 10V
Gate Charge (Qg) (Max) @ Vgs: 364nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 4mA
Supplier Device Package: SP6
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APTC80DDA15T3G 7368-aptc80dda15t3g-datasheet
Виробник: Microchip Technology
Description: MOSFET 2N-CH 800V 28A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP3
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APTC80H15T1G 7372-aptc80h15t1g-rev1-pdf
Виробник: Microchip Technology
Description: MOSFET 4N-CH 800V 28A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP1
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APTC80H15T3G 7373-aptc80h15t3g-datasheet
Виробник: Microchip Technology
Description: MOSFET 4N-CH 800V 28A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP3
Part Status: Active
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APTC80H29SCTG 7374-aptc80h29sctg-datasheet
Виробник: Microchip Technology
Description: MOSFET 4N-CH 800V 15A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 156W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: SP4
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APTC80H29T3G 7376-aptc80h29t3g-datasheet
Виробник: Microchip Technology
Description: MOSFET 4N-CH 800V 15A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 156W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: SP3
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APTC80TA15PG 7378-aptc80ta15pg-datasheet
APTC80TA15PG
Виробник: Microchip Technology
Description: MOSFET 6N-CH 800V 28A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP6-P
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APTC80TDU15PG 7379-aptc80tdu15pg-datasheet
APTC80TDU15PG
Виробник: Microchip Technology
Description: MOSFET 6N-CH 800V 28A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP6-P
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APTCV40H60CT1G 7398-aptcv40h60ct1g-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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APTCV50H60T3G 7399-aptcv50h60t3g-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP3
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APTDF200H60G 7426-aptdf200h60g-datasheet
APTDF200H60G
Виробник: Microchip Technology
Description: BRIDGE RECT 1PHASE 600V 270A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: SP6
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 270 A
Voltage - Forward (Vf) (Max) @ If: 2 V @ 200 A
Current - Reverse Leakage @ Vr: 350 µA @ 600 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9841.30 грн
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APTDF30H1201G 7427-aptdf30h1201g-datasheet
Виробник: Microchip Technology
Description: BRIDGE RECT 1PHASE 1.2KV 43A SP1
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APTDF400AK100G 7435-aptdf400ak100g-datasheet
Виробник: Microchip Technology
Description: DIODE MODULE GP 1000V 500A SP6
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 290 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 500A
Supplier Device Package: SP6
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 400 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
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APTDF400AK120G 7436-aptdf400ak120g-datasheet
APTDF400AK120G
Виробник: Microchip Technology
Description: DIODE MODULE 1.2KV 470A SP6
Packaging: Tube
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 385 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 470A
Supplier Device Package: SP6
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 400 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
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APTDF400KK120G 7441-aptdf400kk120g-datasheet
APTDF400KK120G
Виробник: Microchip Technology
Description: DIODE MODULE GP 1200V 470A SP6
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 385 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 470A
Supplier Device Package: SP6
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 400 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 39 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10621.43 грн
25+7305.71 грн
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APTDF400KK20G 7443-aptdf400kk20g-datasheet
APTDF400KK20G
Виробник: Microchip Technology
Description: DIODE MODULE GP 200V 500A SP6
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 500A
Supplier Device Package: SP6
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 400 A
Current - Reverse Leakage @ Vr: 750 µA @ 200 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10123.85 грн
25+6963.50 грн
В кошику  од. на суму  грн.
APTDF400U120G 7445-aptdf400u120g-datasheet
APTDF400U120G
Виробник: Microchip Technology
Description: DIODE GEN PURP 1.2KV 450A LP4
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Current - Average Rectified (Io): 450A
Supplier Device Package: LP4
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 1200 V
на замовлення 516 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8177.79 грн
100+4921.61 грн
В кошику  од. на суму  грн.
APTDF430U100G 7446-aptdf430u100g-datasheet
APTDF430U100G
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 500A LP4
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Current - Average Rectified (Io): 500A
Supplier Device Package: LP4
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 500 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
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