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APTC60SKM24T1G APTC60SKM24T1G Microchip Technology APTC60SKM24T1G-Rev1.pdf Description: MOSFET N-CH 600V 95A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SP1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
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APTC60TAM35PG APTC60TAM35PG Microchip Technology 7358-aptc60tam35pg-datasheet Description: MOSFET 6N-CH 600V 72A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP6-P
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APTC60TDUM35PG APTC60TDUM35PG Microchip Technology 7360-aptc60tdum35pg-datasheet Description: MOSFET 6N-CH 600V 72A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP6-P
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APTC80A10SCTG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 800V 42A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 42A
Input Capacitance (Ciss) (Max) @ Vds: 6761pF @ 25V
Rds On (Max) @ Id, Vgs: 100mOhm @ 21A, 10V
Gate Charge (Qg) (Max) @ Vgs: 273nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: SP4
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APTC80A15SCTG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 800V 28A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP4
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APTC80AM75SCG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 800V 56A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 568W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 56A
Input Capacitance (Ciss) (Max) @ Vds: 9015pF @ 25V
Rds On (Max) @ Id, Vgs: 75mOhm @ 28A, 10V
Gate Charge (Qg) (Max) @ Vgs: 364nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 4mA
Supplier Device Package: SP6
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APTC80DDA15T3G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 800V 28A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP3
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APTC80H15T1G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 800V 28A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP1
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APTC80H15T3G Microchip Technology 7373-aptc80h15t3g-datasheet Description: MOSFET 4N-CH 800V 28A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP3
Part Status: Active
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APTC80H29SCTG Microchip Technology 7374-aptc80h29sctg-datasheet Description: MOSFET 4N-CH 800V 15A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 156W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: SP4
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APTC80H29T3G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 800V 15A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 156W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: SP3
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APTC80TA15PG APTC80TA15PG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 6N-CH 800V 28A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP6-P
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APTC80TDU15PG APTC80TDU15PG Microchip Technology 7379-aptc80tdu15pg-datasheet Description: MOSFET 6N-CH 800V 28A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP6-P
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APTCV40H60CT1G Microchip Technology 7398-aptcv40h60ct1g-datasheet Description: IGBT MODULE 600V 80A 176W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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APTCV50H60T3G Microchip Technology 7399-aptcv50h60t3g-datasheet Description: IGBT MODULE 600V 80A 176W SP3
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APTDF200H60G APTDF200H60G Microchip Technology 7426-aptdf200h60g-datasheet Description: BRIDGE RECT 1PHASE 600V 270A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: SP6
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 270 A
Voltage - Forward (Vf) (Max) @ If: 2 V @ 200 A
Current - Reverse Leakage @ Vr: 350 µA @ 600 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
1+10451.15 грн
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APTDF30H1201G Microchip Technology 7427-aptdf30h1201g-datasheet Description: BRIDGE RECT 1PHASE 1.2KV 43A SP1
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APTDF400AK100G Microchip Technology 7435-aptdf400ak100g-datasheet Description: DIODE MODULE GP 1000V 500A SP6
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 290 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 500A
Supplier Device Package: SP6
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 400 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
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APTDF400AK120G APTDF400AK120G Microchip Technology 7436-aptdf400ak120g-datasheet Description: DIODE MODULE 1.2KV 470A SP6
Packaging: Tube
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 385 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 470A
Supplier Device Package: SP6
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 400 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
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APTDF400KK120G APTDF400KK120G Microchip Technology 7441-aptdf400kk120g-datasheet Description: DIODE MODULE GP 1200V 470A SP6
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 385 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 470A
Supplier Device Package: SP6
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 400 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 39 шт:
термін постачання 21-31 дні (днів)
1+11279.63 грн
25+7758.43 грн
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APTDF400KK20G APTDF400KK20G Microchip Technology 7443-aptdf400kk20g-datasheet Description: DIODE MODULE GP 200V 500A SP6
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 500A
Supplier Device Package: SP6
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 400 A
Current - Reverse Leakage @ Vr: 750 µA @ 200 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
1+10751.22 грн
25+7395.02 грн
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APTDF400U120G APTDF400U120G Microchip Technology 7445-aptdf400u120g-datasheet Description: DIODE GEN PURP 1.2KV 450A LP4
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Current - Average Rectified (Io): 450A
Supplier Device Package: LP4
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 1200 V
на замовлення 516 шт:
термін постачання 21-31 дні (днів)
1+8684.56 грн
100+5226.59 грн
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APTDF430U100G APTDF430U100G Microchip Technology 7446-aptdf430u100g-datasheet Description: DIODE GEN PURP 1KV 500A LP4
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Current - Average Rectified (Io): 500A
Supplier Device Package: LP4
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 500 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 1000 V
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APTDF450U60G APTDF450U60G Microchip Technology 7447-aptdf450u60g-datasheet Description: DIODE GEN PURP 600V 500A LP4
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Current - Average Rectified (Io): 500A
Supplier Device Package: LP4
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 500 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 600 V
на замовлення 61 шт:
термін постачання 21-31 дні (днів)
1+8084.43 грн
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APTDR40X1601G Microchip Technology 7453-aptdr40x1601g-datasheet Description: BRIDGE RECT 3PHASE 1.6KV 40A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SP1
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 40 A
Current - Reverse Leakage @ Vr: 20 µA @ 1600 V
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APTDR90X1601G APTDR90X1601G Microchip Technology APTDR90X1601G-Rev2.pdf Description: BRIDGE RECT 3PHASE 1.6KV 90A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SP1
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 90 A
Current - Reverse Leakage @ Vr: 50 µA @ 1600 V
на замовлення 65 шт:
термін постачання 21-31 дні (днів)
1+3588.41 грн
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APTGF100A120TG APTGF100A120TG Microchip Technology APTGF100A120TG.pdf Description: IGBT MODULE 1200V 135A 568W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Current - Collector (Ic) (Max): 135 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 568 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 6.9 nF @ 25 V
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APTGF100DA120T1G APTGF100DA120T1G Microchip Technology APTGF100DA120T1G.pdf Description: IGBT MODULE 1200V 130A 735W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: NPT
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 735 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
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APTGF100DA120TG APTGF100DA120TG Microchip Technology APTGF100DA120TG.pdf Description: IGBT MODULE 1200V 135A 568W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Current - Collector (Ic) (Max): 135 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 568 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 6.9 nF @ 25 V
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APTGF150A120TG APTGF150A120TG Microchip Technology APTGF150A120TG.pdf Description: IGBT MODULE 1200V 200A 961W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 961 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 10.2 nF @ 25 V
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APTGF150DH120G Microchip Technology APTGF150DH120G.pdf Description: IGBT MODULE 1200V 200A 961W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Asymmetrical Bridge
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 961 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 10.2 nF @ 25 V
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APTGF150H120G APTGF150H120G Microchip Technology APTGF150H120G.pdf Description: IGBT MODULE 1200V 200A 961W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 961 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 10.2 nF @ 25 V
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APTGF180A60TG Microchip Technology APTGF180A60TG.pdf Description: IGBT MODULE 600V 220A 833W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 180A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 8.6 nF @ 25 V
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APTGF180H60G APTGF180H60G Microchip Technology APTGF180H60G.pdf Description: IGBT MODULE 600V 220A 833W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 180A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 8.6 nF @ 25 V
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APTGF180SK60TG Microchip Technology APTGF180SK60TG.pdf Description: IGBT MODULE 600V 220A 833W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 180A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 8.6 nF @ 25 V
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APTGF25H120T1G APTGF25H120T1G Microchip Technology APTGF25H120T1G.pdf Description: IGBT MODULE 1200V 40A 208W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: NPT
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 208 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
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APTGF25X120T3G Microchip Technology APTGF25X120T3G.pdf Description: IGBT MODULE 1200V 40A 208W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 208 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
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APTGF300A120G APTGF300A120G Microchip Technology APTGF300A120G.pdf Description: IGBT MODULE 1200V 400A 1780W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: NPT
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1780 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
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APTGF300SK120G Microchip Technology APTGF300SK120G.pdf Description: IGBT MODULE 1200V 400A 1780W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: NPT
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1780 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
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APTGF300U120DG APTGF300U120DG Microchip Technology APTGF300U120DG.pdf Description: IGBT MODULE 1200V 400A 1780W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: NPT
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1780 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
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APTGF30H60T1G APTGF30H60T1G Microchip Technology APTGF30H60T1G.pdf Description: IGBT MODULE 600V 42A 140W SP1
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APTGF30H60T3G APTGF30H60T3G Microchip Technology APTGF30H60T3G.pdf Description: IGBT MODULE 600V 42A 140W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 140 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
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APTGF350A60G APTGF350A60G Microchip Technology APTGF350A60G.pdf Description: IGBT MODULE 600V 430A 1562W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 360A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: NPT
Current - Collector (Ic) (Max): 430 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1562 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 17.2 nF @ 25 V
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APTGF500U60D4G APTGF500U60D4G Microchip Technology APTGF500U60D4G.pdf Description: IGBT MODULE 600V 625A 2000W D4
Packaging: Bulk
Package / Case: D4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 500A
NTC Thermistor: No
Supplier Device Package: D4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 625 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
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APTGF50DDA60T3G Microchip Technology APTGF50DDA60T3G.pdf Description: IGBT MODULE 600V 65A 250W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V
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APTGF50H60T1G Microchip Technology APTGF50H60T1G.pdf Description: IGBT MODULE 600V 65A 250W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: NPT
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V
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APTGF50H60T3G APTGF50H60T3G Microchip Technology APTGF50H60T3G.pdf Description: IGBT MODULE 600V 65A 250W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V
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APTGF75DSK120TG APTGF75DSK120TG Microchip Technology APTGF75DSK120TG.pdf Description: IGBT MODULE 1200V 100A 500W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
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APTGF75H120TG APTGF75H120TG Microchip Technology APTGF75H120TG.pdf Description: IGBT MODULE 1200V 100A 500W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
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APTGF90A60T1G APTGF90A60T1G Microchip Technology APTGF90A60T1G.pdf Description: IGBT MODULE 600V 110A 416W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: NPT
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 416 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
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APTGF90A60TG Microchip Technology APTGF90A60TG.pdf Description: IGBT MODULE 600V 110A 416W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 416 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
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APTGL475A120D3G APTGL475A120D3G Microchip Technology index.php?option=com_docman&task=doc_download&gid=7633 Description: IGBT MODULE 1200V 610A 2080W D3
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APTGL475DA120D3G Microchip Technology 7634-aptgl475da120d3g-datasheet Description: IGBT MODULE 1200V 610A 2080W D3
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APTGL475SK120D3G Microchip Technology index.php?option=com_docman&task=doc_download&gid=7635 Description: IGBT MODULE 1200V 610A 2080W D3
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APTGL475U120D4G APTGL475U120D4G Microchip Technology APTGL475U120D4G.pdf Description: IGBT MODULE 1200V 610A 2082W D4
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APTGT100A170TG APTGT100A170TG Microchip Technology 7666-aptgt100a170tg-datasheet Description: IGBT MODULE 1700V 150A 560W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 560 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
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APTGT100A60T1G APTGT100A60T1G Microchip Technology 7667-aptgt100a60t1g-datasheet Description: IGBT MODULE 600V 150A 340W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 340 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V
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APTGT100DA120T1G Microchip Technology 7672-aptgt100da120t1g-datasheet Description: IGBT MODULE 1200V 140A 480W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 480 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 7.2 nF @ 25 V
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APTGT100DA60T1G APTGT100DA60T1G Microchip Technology 7676-aptgt100da60t1g-datasheet Description: IGBT MODULE 600V 150A 340W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 340 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V
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APTGT100DH60TG Microchip Technology 7683-aptgt100dh60tg-datasheet Description: IGBT MODULE 600V 150A 340W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Asymmetrical Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 340 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V
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APTC60SKM24T1G APTC60SKM24T1G-Rev1.pdf
APTC60SKM24T1G
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 95A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SP1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
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APTC60TAM35PG 7358-aptc60tam35pg-datasheet
APTC60TAM35PG
Виробник: Microchip Technology
Description: MOSFET 6N-CH 600V 72A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP6-P
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APTC60TDUM35PG 7360-aptc60tdum35pg-datasheet
APTC60TDUM35PG
Виробник: Microchip Technology
Description: MOSFET 6N-CH 600V 72A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP6-P
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APTC80A10SCTG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET 2N-CH 800V 42A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 42A
Input Capacitance (Ciss) (Max) @ Vds: 6761pF @ 25V
Rds On (Max) @ Id, Vgs: 100mOhm @ 21A, 10V
Gate Charge (Qg) (Max) @ Vgs: 273nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: SP4
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APTC80A15SCTG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET 2N-CH 800V 28A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP4
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APTC80AM75SCG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET 2N-CH 800V 56A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 568W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 56A
Input Capacitance (Ciss) (Max) @ Vds: 9015pF @ 25V
Rds On (Max) @ Id, Vgs: 75mOhm @ 28A, 10V
Gate Charge (Qg) (Max) @ Vgs: 364nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 4mA
Supplier Device Package: SP6
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APTC80DDA15T3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET 2N-CH 800V 28A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP3
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APTC80H15T1G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET 4N-CH 800V 28A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP1
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APTC80H15T3G 7373-aptc80h15t3g-datasheet
Виробник: Microchip Technology
Description: MOSFET 4N-CH 800V 28A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP3
Part Status: Active
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APTC80H29SCTG 7374-aptc80h29sctg-datasheet
Виробник: Microchip Technology
Description: MOSFET 4N-CH 800V 15A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 156W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: SP4
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APTC80H29T3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET 4N-CH 800V 15A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 156W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: SP3
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APTC80TA15PG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTC80TA15PG
Виробник: Microchip Technology
Description: MOSFET 6N-CH 800V 28A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP6-P
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APTC80TDU15PG 7379-aptc80tdu15pg-datasheet
APTC80TDU15PG
Виробник: Microchip Technology
Description: MOSFET 6N-CH 800V 28A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP6-P
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APTCV40H60CT1G 7398-aptcv40h60ct1g-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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APTCV50H60T3G 7399-aptcv50h60t3g-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP3
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APTDF200H60G 7426-aptdf200h60g-datasheet
APTDF200H60G
Виробник: Microchip Technology
Description: BRIDGE RECT 1PHASE 600V 270A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: SP6
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 270 A
Voltage - Forward (Vf) (Max) @ If: 2 V @ 200 A
Current - Reverse Leakage @ Vr: 350 µA @ 600 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10451.15 грн
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APTDF30H1201G 7427-aptdf30h1201g-datasheet
Виробник: Microchip Technology
Description: BRIDGE RECT 1PHASE 1.2KV 43A SP1
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APTDF400AK100G 7435-aptdf400ak100g-datasheet
Виробник: Microchip Technology
Description: DIODE MODULE GP 1000V 500A SP6
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 290 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 500A
Supplier Device Package: SP6
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 400 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
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APTDF400AK120G 7436-aptdf400ak120g-datasheet
APTDF400AK120G
Виробник: Microchip Technology
Description: DIODE MODULE 1.2KV 470A SP6
Packaging: Tube
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 385 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 470A
Supplier Device Package: SP6
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 400 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
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APTDF400KK120G 7441-aptdf400kk120g-datasheet
APTDF400KK120G
Виробник: Microchip Technology
Description: DIODE MODULE GP 1200V 470A SP6
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 385 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 470A
Supplier Device Package: SP6
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 400 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 39 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+11279.63 грн
25+7758.43 грн
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APTDF400KK20G 7443-aptdf400kk20g-datasheet
APTDF400KK20G
Виробник: Microchip Technology
Description: DIODE MODULE GP 200V 500A SP6
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 500A
Supplier Device Package: SP6
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 400 A
Current - Reverse Leakage @ Vr: 750 µA @ 200 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10751.22 грн
25+7395.02 грн
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APTDF400U120G 7445-aptdf400u120g-datasheet
APTDF400U120G
Виробник: Microchip Technology
Description: DIODE GEN PURP 1.2KV 450A LP4
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Current - Average Rectified (Io): 450A
Supplier Device Package: LP4
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 1200 V
на замовлення 516 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8684.56 грн
100+5226.59 грн
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APTDF430U100G 7446-aptdf430u100g-datasheet
APTDF430U100G
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 500A LP4
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Current - Average Rectified (Io): 500A
Supplier Device Package: LP4
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 500 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 1000 V
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APTDF450U60G 7447-aptdf450u60g-datasheet
APTDF450U60G
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 500A LP4
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Current - Average Rectified (Io): 500A
Supplier Device Package: LP4
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 500 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 600 V
на замовлення 61 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8084.43 грн
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APTDR40X1601G 7453-aptdr40x1601g-datasheet
Виробник: Microchip Technology
Description: BRIDGE RECT 3PHASE 1.6KV 40A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SP1
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 40 A
Current - Reverse Leakage @ Vr: 20 µA @ 1600 V
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APTDR90X1601G APTDR90X1601G-Rev2.pdf
APTDR90X1601G
Виробник: Microchip Technology
Description: BRIDGE RECT 3PHASE 1.6KV 90A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SP1
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 90 A
Current - Reverse Leakage @ Vr: 50 µA @ 1600 V
на замовлення 65 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3588.41 грн
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APTGF100A120TG APTGF100A120TG.pdf
APTGF100A120TG
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 135A 568W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Current - Collector (Ic) (Max): 135 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 568 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 6.9 nF @ 25 V
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APTGF100DA120T1G APTGF100DA120T1G.pdf
APTGF100DA120T1G
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 130A 735W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: NPT
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 735 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
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APTGF100DA120TG APTGF100DA120TG.pdf
APTGF100DA120TG
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 135A 568W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Current - Collector (Ic) (Max): 135 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 568 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 6.9 nF @ 25 V
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APTGF150A120TG APTGF150A120TG.pdf
APTGF150A120TG
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 200A 961W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 961 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 10.2 nF @ 25 V
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APTGF150DH120G APTGF150DH120G.pdf
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 200A 961W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Asymmetrical Bridge
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 961 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 10.2 nF @ 25 V
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APTGF150H120G APTGF150H120G.pdf
APTGF150H120G
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 200A 961W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 961 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 10.2 nF @ 25 V
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APTGF180A60TG APTGF180A60TG.pdf
Виробник: Microchip Technology
Description: IGBT MODULE 600V 220A 833W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 180A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 8.6 nF @ 25 V
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APTGF180H60G APTGF180H60G.pdf
APTGF180H60G
Виробник: Microchip Technology
Description: IGBT MODULE 600V 220A 833W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 180A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 8.6 nF @ 25 V
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APTGF180SK60TG APTGF180SK60TG.pdf
Виробник: Microchip Technology
Description: IGBT MODULE 600V 220A 833W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 180A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 8.6 nF @ 25 V
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APTGF25H120T1G APTGF25H120T1G.pdf
APTGF25H120T1G
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 40A 208W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: NPT
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 208 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
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APTGF25X120T3G APTGF25X120T3G.pdf
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 40A 208W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 208 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
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APTGF300A120G APTGF300A120G.pdf
APTGF300A120G
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 400A 1780W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: NPT
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1780 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
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APTGF300SK120G APTGF300SK120G.pdf
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 400A 1780W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: NPT
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1780 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
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APTGF300U120DG APTGF300U120DG.pdf
APTGF300U120DG
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 400A 1780W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: NPT
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1780 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
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APTGF30H60T1G APTGF30H60T1G.pdf
APTGF30H60T1G
Виробник: Microchip Technology
Description: IGBT MODULE 600V 42A 140W SP1
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APTGF30H60T3G APTGF30H60T3G.pdf
APTGF30H60T3G
Виробник: Microchip Technology
Description: IGBT MODULE 600V 42A 140W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 140 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
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APTGF350A60G APTGF350A60G.pdf
APTGF350A60G
Виробник: Microchip Technology
Description: IGBT MODULE 600V 430A 1562W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 360A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: NPT
Current - Collector (Ic) (Max): 430 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1562 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 17.2 nF @ 25 V
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APTGF500U60D4G APTGF500U60D4G.pdf
APTGF500U60D4G
Виробник: Microchip Technology
Description: IGBT MODULE 600V 625A 2000W D4
Packaging: Bulk
Package / Case: D4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 500A
NTC Thermistor: No
Supplier Device Package: D4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 625 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
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APTGF50DDA60T3G APTGF50DDA60T3G.pdf
Виробник: Microchip Technology
Description: IGBT MODULE 600V 65A 250W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V
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APTGF50H60T1G APTGF50H60T1G.pdf
Виробник: Microchip Technology
Description: IGBT MODULE 600V 65A 250W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: NPT
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V
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APTGF50H60T3G APTGF50H60T3G.pdf
APTGF50H60T3G
Виробник: Microchip Technology
Description: IGBT MODULE 600V 65A 250W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V
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APTGF75DSK120TG APTGF75DSK120TG.pdf
APTGF75DSK120TG
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 100A 500W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
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APTGF75H120TG APTGF75H120TG.pdf
APTGF75H120TG
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 100A 500W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
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APTGF90A60T1G APTGF90A60T1G.pdf
APTGF90A60T1G
Виробник: Microchip Technology
Description: IGBT MODULE 600V 110A 416W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: NPT
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 416 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
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APTGF90A60TG APTGF90A60TG.pdf
Виробник: Microchip Technology
Description: IGBT MODULE 600V 110A 416W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 416 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
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APTGL475A120D3G index.php?option=com_docman&task=doc_download&gid=7633
APTGL475A120D3G
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 610A 2080W D3
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APTGL475DA120D3G 7634-aptgl475da120d3g-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 610A 2080W D3
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APTGL475SK120D3G index.php?option=com_docman&task=doc_download&gid=7635
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 610A 2080W D3
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APTGL475U120D4G APTGL475U120D4G.pdf
APTGL475U120D4G
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 610A 2082W D4
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APTGT100A170TG 7666-aptgt100a170tg-datasheet
APTGT100A170TG
Виробник: Microchip Technology
Description: IGBT MODULE 1700V 150A 560W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 560 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
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APTGT100A60T1G 7667-aptgt100a60t1g-datasheet
APTGT100A60T1G
Виробник: Microchip Technology
Description: IGBT MODULE 600V 150A 340W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 340 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V
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APTGT100DA120T1G 7672-aptgt100da120t1g-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 140A 480W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 480 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 7.2 nF @ 25 V
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APTGT100DA60T1G 7676-aptgt100da60t1g-datasheet
APTGT100DA60T1G
Виробник: Microchip Technology
Description: IGBT MODULE 600V 150A 340W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 340 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V
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APTGT100DH60TG 7683-aptgt100dh60tg-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 600V 150A 340W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Asymmetrical Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 340 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V
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