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APT40N60JCU3 APT40N60JCU3 Microchip Technology 7017-apt40n60jcu3-datasheet Description: MOSFET N-CH 600V 40A SOT227
Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
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APT5010JLLU2 APT5010JLLU2 Microchip Technology 7076-apt5010jllu2-datasheet Description: MOSFET N-CH 500V 41A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 378W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
1+2183.54 грн
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APT5010JLLU3 APT5010JLLU3 Microchip Technology 7077-apt5010jllu3-datasheet Description: MOSFET N-CH 500V 41A SOT227
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 378W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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APT5010JVRU2 APT5010JVRU2 Microchip Technology APT5010JVRU2-Rev2.pdf Description: MOSFET N-CH 500V 44A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 22A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 312 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7410 pF @ 25 V
на замовлення 34 шт:
термін постачання 21-31 дні (днів)
1+2311.01 грн
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APT5010JVRU3 APT5010JVRU3 Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 500V 44A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 22A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 312 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7410 pF @ 25 V
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APT50GF60JU2 APT50GF60JU2 Microchip Technology APT50GF60JU2.pdf Description: IGBT MODULE 600V 75A 277W SOT227
Input Capacitance (Cies) @ Vce: 2.25 nF @ 25 V
Current - Collector Cutoff (Max): 40 µA
Power - Max: 277 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
IGBT Type: NPT
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Bulk
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+2361.07 грн
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APT50GT120JU2 APT50GT120JU2 Microchip Technology 7110-apt50gt120ju2-datasheet Description: IGBT MOD 1200V 75A 347W SOT227
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 347 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
IGBT Type: Trench Field Stop
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
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APT50GT120JU3 APT50GT120JU3 Microchip Technology 7111-apt50gt120ju3-datasheet Description: IGBT MOD 1200V 75A 347W SOT227
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 347 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
IGBT Type: Trench Field Stop
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 100 шт
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APT50M75JLLU2 APT50M75JLLU2 Microchip Technology 7118-apt50m75jllu2-datasheet Description: MOSFET N-CH 500V 51A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
1+2509.66 грн
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APT50M75JLLU3 APT50M75JLLU3 Microchip Technology APT50M75JLLU3.pdf Description: MOSFET N-CH 500V 51A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
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APT50N60JCCU2 APT50N60JCCU2 Microchip Technology 7123-apt50n60jccu2-datasheet Description: MOSFET N-CH 600V 50A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
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 Мінімальне замовлення: 25 шт
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APT60GF60JU2 APT60GF60JU2 Microchip Technology APT60GF60JU2.pdf Description: IGBT MOD 600V 93A 378W SOT-227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 93 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 378 W
Current - Collector Cutoff (Max): 80 µA
Input Capacitance (Cies) @ Vce: 3.59 nF @ 25 V
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 Мінімальне замовлення: 50 шт
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APT60GF60JU3 APT60GF60JU3 Microchip Technology APT60GF60JU3.pdf Description: IGBT MOD 600V 93A 378W SOT-227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 93 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 378 W
Current - Collector Cutoff (Max): 80 µA
Input Capacitance (Cies) @ Vce: 3.59 nF @ 25 V
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 Мінімальне замовлення: 50 шт
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APT75GT120JU2 APT75GT120JU2 Microchip Technology 7249-apt75gt120ju2-datasheet Description: IGBT MOD 1200V 100A 416W SOT227
Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 416 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench Field Stop
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Bulk
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
1+2418.94 грн
100+1941.16 грн
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APT75GT120JU3 APT75GT120JU3 Microchip Technology 7250-apt75gt120ju3-datasheet Description: IGBT MOD 1200V 100A 416W SOT227
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 Мінімальне замовлення: 33 шт
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APTC60AM18SCG APTC60AM18SCG Microchip Technology 7319-aptc60am18scg-datasheet Description: MOSFET 2N-CH 600V 143A SP6
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APTC60AM35SCTG APTC60AM35SCTG Microchip Technology 7322-aptc60am35sctg-datasheet Description: MOSFET 2N-CH 600V 72A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 36A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP4
товару немає в наявності
 Мінімальне замовлення: 7 шт
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APTC60AM35T1G Microchip Technology 7323-aptc60am35t1g-datasheet Description: MOSFET 2N-CH 600V 72A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP1
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 Мінімальне замовлення: 13 шт
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APTC60AM45T1G Microchip Technology 7324-aptc60am45t1g-datasheet Description: MOSFET 2N-CH 600V 49A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 49A
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: SP1
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 Мінімальне замовлення: 15 шт
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APTC60DAM18CTG APTC60DAM18CTG Microchip Technology 7326-aptc60dam18ctg-datasheet Description: MOSFET N-CH 600V 143A SP4
товару немає в наявності
 Мінімальне замовлення: 7 шт
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APTC60DDAM35T3G APTC60DDAM35T3G Microchip Technology 7331-aptc60ddam35t3g-datasheet Description: MOSFET 2N-CH 600V 72A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP3
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 Мінімальне замовлення: 12 шт
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APTC60HM35T3G APTC60HM35T3G Microchip Technology 7348-aptc60hm35t3g-datasheet Description: MOSFET 4N-CH 600V 72A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP3
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 Мінімальне замовлення: 9 шт
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APTC60HM45T1G Microchip Technology 7350-aptc60hm45t1g-datasheet Description: MOSFET 4N-CH 600V 49A SP1
товару немає в наявності
 Мінімальне замовлення: 10 шт
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APTC60HM70SCTG APTC60HM70SCTG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 600V 39A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: SP4
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APTC60HM70T1G Microchip Technology Description: MOSFET 4N-CH 600V 39A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: SP1
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APTC60HM70T3G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 600V 39A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: SP3
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 Мінімальне замовлення: 13 шт
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APTC60SKM24T1G APTC60SKM24T1G Microchip Technology APTC60SKM24T1G-Rev1.pdf Description: MOSFET N-CH 600V 95A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SP1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
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APTC60TAM35PG APTC60TAM35PG Microchip Technology 7358-aptc60tam35pg-datasheet Description: MOSFET 6N-CH 600V 72A SP6-P
Supplier Device Package: SP6-P
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 72A
Drain to Source Voltage (Vdss): 600V
Power - Max: 416W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
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APTC60TDUM35PG APTC60TDUM35PG Microchip Technology 7360-aptc60tdum35pg-datasheet Description: MOSFET 6N-CH 600V 72A SP6-P
Supplier Device Package: SP6-P
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 72A
Drain to Source Voltage (Vdss): 600V
Power - Max: 416W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
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APTC80A10SCTG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 800V 42A SP4
Supplier Device Package: SP4
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 273nC @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 21A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 6761pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 42A
Drain to Source Voltage (Vdss): 800V
Power - Max: 416W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
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APTC80A15SCTG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 800V 28A SP4
Supplier Device Package: SP4
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 28A
Drain to Source Voltage (Vdss): 800V
Power - Max: 277W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
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APTC80AM75SCG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 800V 56A SP6
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 3.9V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 364nC @ 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 28A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 9015pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 56A
Drain to Source Voltage (Vdss): 800V
Power - Max: 568W
Technology: MOSFET (Metal Oxide)
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APTC80DDA15T3G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 800V 28A SP3
Power - Max: 277W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 28A
Drain to Source Voltage (Vdss): 800V
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APTC80H15T1G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 800V 28A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP1
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APTC80H15T3G Microchip Technology 7373-aptc80h15t3g-datasheet Description: MOSFET 4N-CH 800V 28A SP3
Part Status: Active
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 28A
Drain to Source Voltage (Vdss): 800V
Power - Max: 277W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
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APTC80H29SCTG Microchip Technology 7374-aptc80h29sctg-datasheet Description: MOSFET 4N-CH 800V 15A SP4
Supplier Device Package: SP4
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 15A
Drain to Source Voltage (Vdss): 800V
Power - Max: 156W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
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APTC80H29T3G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 800V 15A SP3
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 15A
Drain to Source Voltage (Vdss): 800V
Power - Max: 156W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
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APTC80TA15PG APTC80TA15PG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 6N-CH 800V 28A SP6-P
Package / Case: SP6
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 28A
Drain to Source Voltage (Vdss): 800V
Power - Max: 277W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Supplier Device Package: SP6-P
Vgs(th) (Max) @ Id: 3.9V @ 2mA
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APTC80TDU15PG APTC80TDU15PG Microchip Technology 7379-aptc80tdu15pg-datasheet Description: MOSFET 6N-CH 800V 28A SP6-P
Supplier Device Package: SP6-P
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 28A
Drain to Source Voltage (Vdss): 800V
Power - Max: 277W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
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APTCV40H60CT1G Microchip Technology APTCV40H60CT1G-Rev1.pdf Description: IGBT MODULE 600V 80A 176W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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APTCV50H60T3G Microchip Technology APTCV50H60T3G-Rev2.pdf Description: IGBT MODULE 600V 80A 176W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT, Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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APTDF200H60G APTDF200H60G Microchip Technology 7426-aptdf200h60g-datasheet Description: BRIDGE RECT 1PHASE 600V 270A SP6
Current - Reverse Leakage @ Vr: 350 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 200 A
Current - Average Rectified (Io): 270 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: SP6
Technology: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Diode Type: Single Phase
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
1+9915.07 грн
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APTDF30H1201G Microchip Technology 7427-aptdf30h1201g-datasheet Description: BRIDGE RECT 1PHASE 1.2KV 43A SP1
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APTDF30H601G Microchip Technology APTDF30H601G-Rev3.pdf Description: BRIDGE RECT 1PHASE 600V 42A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: SP1
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 42 A
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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APTDF400AA170G APTDF400AA170G Microchip Technology APTDF400AA170G-Rev2.pdf Description: DIODE MODULE GP 1700V 480A SP6
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 572 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 480A
Supplier Device Package: SP6
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 400 A
Current - Reverse Leakage @ Vr: 750 µA @ 1700 V
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APTDF400AK100G Microchip Technology 7435-aptdf400ak100g-datasheet Description: DIODE MODULE GP 1000V 500A SP6
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 400 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Supplier Device Package: SP6
Current - Average Rectified (Io) (per Diode): 500A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: LP4
Packaging: Bulk
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APTDF400AK120G APTDF400AK120G Microchip Technology 7436-aptdf400ak120g-datasheet Description: DIODE MODULE 1.2KV 470A SP6
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 400 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Supplier Device Package: SP6
Current - Average Rectified (Io) (per Diode): 470A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 385 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: LP4
Packaging: Tube
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APTDF400AK170G APTDF400AK170G Microchip Technology APTDF400AK170G-Rev2.pdf Description: DIODE MODULE GP 1700V 480A SP6
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 572 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 480A
Supplier Device Package: SP6
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 400 A
Current - Reverse Leakage @ Vr: 750 µA @ 1700 V
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APTDF400KK120G APTDF400KK120G Microchip Technology 7441-aptdf400kk120g-datasheet Description: DIODE MODULE GP 1200V 470A SP6
Part Status: Active
Supplier Device Package: SP6
Current - Average Rectified (Io) (per Diode): 470A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 385 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: LP4
Packaging: Bulk
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 400 A
Voltage - DC Reverse (Vr) (Max): 1200 V
на замовлення 39 шт:
термін постачання 21-31 дні (днів)
1+10701.05 грн
25+7360.47 грн
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APTDF400KK170G APTDF400KK170G Microchip Technology APTDF400KK170G-Rev2.pdf Description: DIODE MODULE GP 1700V 480A SP6
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 572 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 480A
Supplier Device Package: SP6
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 400 A
Current - Reverse Leakage @ Vr: 750 µA @ 1700 V
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APTDF400KK20G APTDF400KK20G Microchip Technology 7443-aptdf400kk20g-datasheet Description: DIODE MODULE GP 200V 500A SP6
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: LP4
Packaging: Bulk
Current - Reverse Leakage @ Vr: 750 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 400 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Supplier Device Package: SP6
Current - Average Rectified (Io) (per Diode): 500A
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
1+10199.74 грн
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APTDF400U120G APTDF400U120G Microchip Technology 7445-aptdf400u120g-datasheet Description: DIODE GEN PURP 1.2KV 450A LP4
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: LP4
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2.5 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: LP4
Current - Average Rectified (Io): 450A
Technology: Standard
Reverse Recovery Time (trr): 110 ns
на замовлення 516 шт:
термін постачання 21-31 дні (днів)
1+8239.10 грн
100+4958.50 грн
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APTDF430U100G APTDF430U100G Microchip Technology 7446-aptdf430u100g-datasheet Description: DIODE GEN PURP 1KV 500A LP4
Current - Reverse Leakage @ Vr: 2.5 mA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 500 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Supplier Device Package: LP4
Current - Average Rectified (Io): 500A
Technology: Standard
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: LP4
Packaging: Bulk
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APTDF450U60G APTDF450U60G Microchip Technology 7447-aptdf450u60g-datasheet Description: DIODE GEN PURP 600V 500A LP4
Current - Reverse Leakage @ Vr: 2.5 mA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 500 A
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: LP4
Current - Average Rectified (Io): 500A
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: LP4
Packaging: Bulk
на замовлення 61 шт:
термін постачання 21-31 дні (днів)
1+7669.75 грн
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APTDR40X1601G Microchip Technology 7453-aptdr40x1601g-datasheet Description: BRIDGE RECT 3PHASE 1.6KV 40A SP1
Current - Reverse Leakage @ Vr: 20 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 40 A
Current - Average Rectified (Io): 40 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: SP1
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
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APTDR90X1601G APTDR90X1601G Microchip Technology APTDR90X1601G-Rev2.pdf Description: BRIDGE RECT 3PHASE 1.6KV 90A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SP1
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 90 A
Current - Reverse Leakage @ Vr: 50 µA @ 1600 V
на замовлення 45 шт:
термін постачання 21-31 дні (днів)
1+3368.37 грн
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APTGF100A120TG APTGF100A120TG Microchip Technology APTGF100A120TG.pdf Description: IGBT MODULE 1200V 135A 568W SP4
Input Capacitance (Cies) @ Vce: 6.9 nF @ 25 V
Current - Collector Cutoff (Max): 350 µA
Power - Max: 568 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 135 A
IGBT Type: NPT
Supplier Device Package: SP4
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
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 Мінімальне замовлення: 50 шт
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APTGF100DA120T1G APTGF100DA120T1G Microchip Technology APTGF100DA120T1G.pdf Description: IGBT MODULE 1200V 130A 735W SP1
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 735 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 130 A
IGBT Type: NPT
Supplier Device Package: SP1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
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 Мінімальне замовлення: 50 шт
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APTGF100DA120TG APTGF100DA120TG Microchip Technology APTGF100DA120TG.pdf Description: IGBT MODULE 1200V 135A 568W SP4
Input Capacitance (Cies) @ Vce: 6.9 nF @ 25 V
Current - Collector Cutoff (Max): 350 µA
Power - Max: 568 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 135 A
IGBT Type: NPT
Supplier Device Package: SP4
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
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APTGF150A120TG APTGF150A120TG Microchip Technology APTGF150A120TG.pdf Description: IGBT MODULE 1200V 200A 961W SP4
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 10.2 nF @ 25 V
Current - Collector Cutoff (Max): 350 µA
Power - Max: 961 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 200 A
Part Status: Obsolete
IGBT Type: NPT
Supplier Device Package: SP4
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
Configuration: Half Bridge
Input: Standard
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APT40N60JCU3 7017-apt40n60jcu3-datasheet
APT40N60JCU3
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 40A SOT227
Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
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APT5010JLLU2 7076-apt5010jllu2-datasheet
APT5010JLLU2
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 41A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 378W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2183.54 грн
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APT5010JLLU3 7077-apt5010jllu3-datasheet
APT5010JLLU3
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 41A SOT227
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 378W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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APT5010JVRU2 APT5010JVRU2-Rev2.pdf
APT5010JVRU2
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 44A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 22A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 312 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7410 pF @ 25 V
на замовлення 34 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2311.01 грн
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APT5010JVRU3 High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT5010JVRU3
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 44A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 22A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 312 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7410 pF @ 25 V
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APT50GF60JU2 APT50GF60JU2.pdf
APT50GF60JU2
Виробник: Microchip Technology
Description: IGBT MODULE 600V 75A 277W SOT227
Input Capacitance (Cies) @ Vce: 2.25 nF @ 25 V
Current - Collector Cutoff (Max): 40 µA
Power - Max: 277 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
IGBT Type: NPT
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Bulk
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2361.07 грн
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APT50GT120JU2 7110-apt50gt120ju2-datasheet
APT50GT120JU2
Виробник: Microchip Technology
Description: IGBT MOD 1200V 75A 347W SOT227
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 347 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
IGBT Type: Trench Field Stop
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Bulk
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APT50GT120JU3 7111-apt50gt120ju3-datasheet
APT50GT120JU3
Виробник: Microchip Technology
Description: IGBT MOD 1200V 75A 347W SOT227
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 347 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
IGBT Type: Trench Field Stop
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Bulk
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Мінімальне замовлення: 100 шт
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APT50M75JLLU2 7118-apt50m75jllu2-datasheet
APT50M75JLLU2
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 51A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2509.66 грн
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APT50M75JLLU3 APT50M75JLLU3.pdf
APT50M75JLLU3
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 51A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
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APT50N60JCCU2 7123-apt50n60jccu2-datasheet
APT50N60JCCU2
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 50A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
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APT60GF60JU2 APT60GF60JU2.pdf
APT60GF60JU2
Виробник: Microchip Technology
Description: IGBT MOD 600V 93A 378W SOT-227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 93 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 378 W
Current - Collector Cutoff (Max): 80 µA
Input Capacitance (Cies) @ Vce: 3.59 nF @ 25 V
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APT60GF60JU3 APT60GF60JU3.pdf
APT60GF60JU3
Виробник: Microchip Technology
Description: IGBT MOD 600V 93A 378W SOT-227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 93 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 378 W
Current - Collector Cutoff (Max): 80 µA
Input Capacitance (Cies) @ Vce: 3.59 nF @ 25 V
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APT75GT120JU2 7249-apt75gt120ju2-datasheet
APT75GT120JU2
Виробник: Microchip Technology
Description: IGBT MOD 1200V 100A 416W SOT227
Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 416 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench Field Stop
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Bulk
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2418.94 грн
100+1941.16 грн
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APT75GT120JU3 7250-apt75gt120ju3-datasheet
APT75GT120JU3
Виробник: Microchip Technology
Description: IGBT MOD 1200V 100A 416W SOT227
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Мінімальне замовлення: 33 шт
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APTC60AM18SCG 7319-aptc60am18scg-datasheet
APTC60AM18SCG
Виробник: Microchip Technology
Description: MOSFET 2N-CH 600V 143A SP6
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APTC60AM35SCTG 7322-aptc60am35sctg-datasheet
APTC60AM35SCTG
Виробник: Microchip Technology
Description: MOSFET 2N-CH 600V 72A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 36A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP4
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APTC60AM35T1G 7323-aptc60am35t1g-datasheet
Виробник: Microchip Technology
Description: MOSFET 2N-CH 600V 72A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP1
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Мінімальне замовлення: 13 шт
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APTC60AM45T1G 7324-aptc60am45t1g-datasheet
Виробник: Microchip Technology
Description: MOSFET 2N-CH 600V 49A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 49A
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: SP1
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Мінімальне замовлення: 15 шт
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APTC60DAM18CTG 7326-aptc60dam18ctg-datasheet
APTC60DAM18CTG
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 143A SP4
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Мінімальне замовлення: 7 шт
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APTC60DDAM35T3G 7331-aptc60ddam35t3g-datasheet
APTC60DDAM35T3G
Виробник: Microchip Technology
Description: MOSFET 2N-CH 600V 72A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP3
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Мінімальне замовлення: 12 шт
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APTC60HM35T3G 7348-aptc60hm35t3g-datasheet
APTC60HM35T3G
Виробник: Microchip Technology
Description: MOSFET 4N-CH 600V 72A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP3
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Мінімальне замовлення: 9 шт
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APTC60HM45T1G 7350-aptc60hm45t1g-datasheet
Виробник: Microchip Technology
Description: MOSFET 4N-CH 600V 49A SP1
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Мінімальне замовлення: 10 шт
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APTC60HM70SCTG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTC60HM70SCTG
Виробник: Microchip Technology
Description: MOSFET 4N-CH 600V 39A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: SP4
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APTC60HM70T1G
Виробник: Microchip Technology
Description: MOSFET 4N-CH 600V 39A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: SP1
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APTC60HM70T3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET 4N-CH 600V 39A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: SP3
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APTC60SKM24T1G APTC60SKM24T1G-Rev1.pdf
APTC60SKM24T1G
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 95A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SP1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
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Мінімальне замовлення: 15 шт
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APTC60TAM35PG 7358-aptc60tam35pg-datasheet
APTC60TAM35PG
Виробник: Microchip Technology
Description: MOSFET 6N-CH 600V 72A SP6-P
Supplier Device Package: SP6-P
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 72A
Drain to Source Voltage (Vdss): 600V
Power - Max: 416W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
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APTC60TDUM35PG 7360-aptc60tdum35pg-datasheet
APTC60TDUM35PG
Виробник: Microchip Technology
Description: MOSFET 6N-CH 600V 72A SP6-P
Supplier Device Package: SP6-P
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 72A
Drain to Source Voltage (Vdss): 600V
Power - Max: 416W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
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APTC80A10SCTG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET 2N-CH 800V 42A SP4
Supplier Device Package: SP4
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 273nC @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 21A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 6761pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 42A
Drain to Source Voltage (Vdss): 800V
Power - Max: 416W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
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APTC80A15SCTG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET 2N-CH 800V 28A SP4
Supplier Device Package: SP4
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 28A
Drain to Source Voltage (Vdss): 800V
Power - Max: 277W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
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APTC80AM75SCG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET 2N-CH 800V 56A SP6
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 3.9V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 364nC @ 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 28A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 9015pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 56A
Drain to Source Voltage (Vdss): 800V
Power - Max: 568W
Technology: MOSFET (Metal Oxide)
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APTC80DDA15T3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET 2N-CH 800V 28A SP3
Power - Max: 277W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 28A
Drain to Source Voltage (Vdss): 800V
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APTC80H15T1G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET 4N-CH 800V 28A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP1
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APTC80H15T3G 7373-aptc80h15t3g-datasheet
Виробник: Microchip Technology
Description: MOSFET 4N-CH 800V 28A SP3
Part Status: Active
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 28A
Drain to Source Voltage (Vdss): 800V
Power - Max: 277W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
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APTC80H29SCTG 7374-aptc80h29sctg-datasheet
Виробник: Microchip Technology
Description: MOSFET 4N-CH 800V 15A SP4
Supplier Device Package: SP4
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 15A
Drain to Source Voltage (Vdss): 800V
Power - Max: 156W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
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APTC80H29T3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET 4N-CH 800V 15A SP3
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 15A
Drain to Source Voltage (Vdss): 800V
Power - Max: 156W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
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APTC80TA15PG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTC80TA15PG
Виробник: Microchip Technology
Description: MOSFET 6N-CH 800V 28A SP6-P
Package / Case: SP6
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 28A
Drain to Source Voltage (Vdss): 800V
Power - Max: 277W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Supplier Device Package: SP6-P
Vgs(th) (Max) @ Id: 3.9V @ 2mA
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APTC80TDU15PG 7379-aptc80tdu15pg-datasheet
APTC80TDU15PG
Виробник: Microchip Technology
Description: MOSFET 6N-CH 800V 28A SP6-P
Supplier Device Package: SP6-P
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 28A
Drain to Source Voltage (Vdss): 800V
Power - Max: 277W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
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APTCV40H60CT1G APTCV40H60CT1G-Rev1.pdf
Виробник: Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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APTCV50H60T3G APTCV50H60T3G-Rev2.pdf
Виробник: Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT, Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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Мінімальне замовлення: 13 шт
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APTDF200H60G 7426-aptdf200h60g-datasheet
APTDF200H60G
Виробник: Microchip Technology
Description: BRIDGE RECT 1PHASE 600V 270A SP6
Current - Reverse Leakage @ Vr: 350 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 200 A
Current - Average Rectified (Io): 270 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: SP6
Technology: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Diode Type: Single Phase
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+9915.07 грн
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APTDF30H1201G 7427-aptdf30h1201g-datasheet
Виробник: Microchip Technology
Description: BRIDGE RECT 1PHASE 1.2KV 43A SP1
товару немає в наявності
Мінімальне замовлення: 25 шт
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APTDF30H601G APTDF30H601G-Rev3.pdf
Виробник: Microchip Technology
Description: BRIDGE RECT 1PHASE 600V 42A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: SP1
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 42 A
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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Мінімальне замовлення: 26 шт
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APTDF400AA170G APTDF400AA170G-Rev2.pdf
APTDF400AA170G
Виробник: Microchip Technology
Description: DIODE MODULE GP 1700V 480A SP6
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 572 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 480A
Supplier Device Package: SP6
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 400 A
Current - Reverse Leakage @ Vr: 750 µA @ 1700 V
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APTDF400AK100G 7435-aptdf400ak100g-datasheet
Виробник: Microchip Technology
Description: DIODE MODULE GP 1000V 500A SP6
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 400 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Supplier Device Package: SP6
Current - Average Rectified (Io) (per Diode): 500A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: LP4
Packaging: Bulk
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Мінімальне замовлення: 9 шт
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APTDF400AK120G 7436-aptdf400ak120g-datasheet
APTDF400AK120G
Виробник: Microchip Technology
Description: DIODE MODULE 1.2KV 470A SP6
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 400 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Supplier Device Package: SP6
Current - Average Rectified (Io) (per Diode): 470A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 385 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: LP4
Packaging: Tube
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APTDF400AK170G APTDF400AK170G-Rev2.pdf
APTDF400AK170G
Виробник: Microchip Technology
Description: DIODE MODULE GP 1700V 480A SP6
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 572 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 480A
Supplier Device Package: SP6
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 400 A
Current - Reverse Leakage @ Vr: 750 µA @ 1700 V
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Мінімальне замовлення: 6 шт
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APTDF400KK120G 7441-aptdf400kk120g-datasheet
APTDF400KK120G
Виробник: Microchip Technology
Description: DIODE MODULE GP 1200V 470A SP6
Part Status: Active
Supplier Device Package: SP6
Current - Average Rectified (Io) (per Diode): 470A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 385 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: LP4
Packaging: Bulk
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 400 A
Voltage - DC Reverse (Vr) (Max): 1200 V
на замовлення 39 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+10701.05 грн
25+7360.47 грн
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APTDF400KK170G APTDF400KK170G-Rev2.pdf
APTDF400KK170G
Виробник: Microchip Technology
Description: DIODE MODULE GP 1700V 480A SP6
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 572 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 480A
Supplier Device Package: SP6
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 400 A
Current - Reverse Leakage @ Vr: 750 µA @ 1700 V
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Мінімальне замовлення: 6 шт
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APTDF400KK20G 7443-aptdf400kk20g-datasheet
APTDF400KK20G
Виробник: Microchip Technology
Description: DIODE MODULE GP 200V 500A SP6
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: LP4
Packaging: Bulk
Current - Reverse Leakage @ Vr: 750 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 400 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Supplier Device Package: SP6
Current - Average Rectified (Io) (per Diode): 500A
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+10199.74 грн
25+7015.70 грн
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APTDF400U120G 7445-aptdf400u120g-datasheet
APTDF400U120G
Виробник: Microchip Technology
Description: DIODE GEN PURP 1.2KV 450A LP4
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: LP4
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2.5 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: LP4
Current - Average Rectified (Io): 450A
Technology: Standard
Reverse Recovery Time (trr): 110 ns
на замовлення 516 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+8239.10 грн
100+4958.50 грн
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APTDF430U100G 7446-aptdf430u100g-datasheet
APTDF430U100G
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 500A LP4
Current - Reverse Leakage @ Vr: 2.5 mA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 500 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Supplier Device Package: LP4
Current - Average Rectified (Io): 500A
Technology: Standard
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: LP4
Packaging: Bulk
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Мінімальне замовлення: 13 шт
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APTDF450U60G 7447-aptdf450u60g-datasheet
APTDF450U60G
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 500A LP4
Current - Reverse Leakage @ Vr: 2.5 mA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 500 A
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: LP4
Current - Average Rectified (Io): 500A
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: LP4
Packaging: Bulk
на замовлення 61 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+7669.75 грн
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APTDR40X1601G 7453-aptdr40x1601g-datasheet
Виробник: Microchip Technology
Description: BRIDGE RECT 3PHASE 1.6KV 40A SP1
Current - Reverse Leakage @ Vr: 20 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 40 A
Current - Average Rectified (Io): 40 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: SP1
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 21 шт
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APTDR90X1601G APTDR90X1601G-Rev2.pdf
APTDR90X1601G
Виробник: Microchip Technology
Description: BRIDGE RECT 3PHASE 1.6KV 90A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SP1
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 90 A
Current - Reverse Leakage @ Vr: 50 µA @ 1600 V
на замовлення 45 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+3368.37 грн
В кошику  од. на суму  грн.
APTGF100A120TG APTGF100A120TG.pdf
APTGF100A120TG
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 135A 568W SP4
Input Capacitance (Cies) @ Vce: 6.9 nF @ 25 V
Current - Collector Cutoff (Max): 350 µA
Power - Max: 568 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 135 A
IGBT Type: NPT
Supplier Device Package: SP4
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 50 шт
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APTGF100DA120T1G APTGF100DA120T1G.pdf
APTGF100DA120T1G
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 130A 735W SP1
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 735 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 130 A
IGBT Type: NPT
Supplier Device Package: SP1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
APTGF100DA120TG APTGF100DA120TG.pdf
APTGF100DA120TG
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 135A 568W SP4
Input Capacitance (Cies) @ Vce: 6.9 nF @ 25 V
Current - Collector Cutoff (Max): 350 µA
Power - Max: 568 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 135 A
IGBT Type: NPT
Supplier Device Package: SP4
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
APTGF150A120TG APTGF150A120TG.pdf
APTGF150A120TG
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 200A 961W SP4
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 10.2 nF @ 25 V
Current - Collector Cutoff (Max): 350 µA
Power - Max: 961 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 200 A
Part Status: Obsolete
IGBT Type: NPT
Supplier Device Package: SP4
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
Configuration: Half Bridge
Input: Standard
товару немає в наявності
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