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APTM10DSKM09T3G Microchip Technology Description: MOSFET 2N-CH 100V 139A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 139A
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SP3
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APTM10DSKM19T3G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 100V 70A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SP3
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APTM10DUM02G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 100V 495A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 495A
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SP6
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APTM10HM05FG APTM10HM05FG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 100V 278A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 780W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 278A
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: SP6
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APTM10HM09FT3G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 100V 139A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 139A
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SP3
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APTM10HM19FT3G APTM10HM19FT3G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 100V 70A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SP3
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APTM10SKM02G Microchip Technology index.php?option=com_docman&task=doc_download&gid=8058 Description: MOSFET N-CH 100V 495A SP6
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APTM10SKM05TG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 100V 278A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 278A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: SP4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 700 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
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APTM10TAM09FPG APTM10TAM09FPG Microchip Technology Description: MOSFET 6N-CH 100V 139A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 139A
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SP6-P
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APTM10UM01FAG APTM10UM01FAG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 100V 860A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 275A, 10V
Power Dissipation (Max): 2500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 12mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 60000 pF @ 25 V
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APTM10UM02FAG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8065 Description: MOSFET N-CH 100V 570A SP6
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APTM120A15FG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8066 Description: MOSFET 2N-CH 1200V 60A SP6
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APTM120A20DG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8067 Description: MOSFET 2N-CH 1200V 50A SP6
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APTM120A20SG Microchip Technology 8068-aptm120a20sg-datasheet Description: MOSFET 2N-CH 1200V 50A SP6
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APTM120A29FTG Microchip Technology 8069-aptm120a29ftg-datasheet Description: MOSFET 2N-CH 1200V 34A SP4
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APTM120DA30T1G Microchip Technology 8075-aptm120da30t1g-datasheet Description: MOSFET N-CH 1200V 31A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 25A, 10V
Power Dissipation (Max): 657W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V
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APTM120DU15G APTM120DU15G Microchip Technology index.php?option=com_docman&task=doc_download&gid=8080 Description: MOSFET 2N-CH 1200V 60A SP6
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APTM120H140FT1G APTM120H140FT1G Microchip Technology 8082-aptm120h140ft1g-datasheet Description: MOSFET 4N-CH 1200V 8A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 3812pF @ 25V
Rds On (Max) @ Id, Vgs: 1.68Ohm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SP1
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APTM120H29FG APTM120H29FG Microchip Technology APTM120H29FG-Rev2.pdf Description: MOSFET 4N-CH 1200V 34A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 780W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 34A
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
Rds On (Max) @ Id, Vgs: 348mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
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APTM120U10SAG APTM120U10SAG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 1200V 116A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 58A, 10V
Power Dissipation (Max): 3290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 20mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 1100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V
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APTM120UM70DAG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8101 Description: MOSFET N-CH 1200V 171A SP6
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APTM120UM70FAG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8103 Description: MOSFET N-CH 1200V 171A SP6
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APTM20AM04FG APTM20AM04FG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 372A
Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Part Status: Active
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+18151.44 грн
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APTM20AM05FG Microchip Technology APTM20AM05F.pdf Description: MOSFET 2N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1136W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 317A
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 158.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
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APTM20AM06SG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 200V 300A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 300A
Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 150A, 10V
Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Supplier Device Package: SP6
Part Status: Active
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APTM20AM08FTG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
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APTM20AM10FTG Microchip Technology APTM20AM10FTG-Rev3.pdf Description: MOSFET 2N-CH 200V 175A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 175A
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
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APTM20AM10STG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 200V 175A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 175A
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
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APTM20DAM04G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 372A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V
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APTM20DAM05G APTM20DAM05G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 317A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V
Power Dissipation (Max): 1136W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 448 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27400 pF @ 25 V
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APTM20DAM08TG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 208A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Power Dissipation (Max): 781W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
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APTM20DUM04G APTM20DUM04G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 372A
Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
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APTM20DUM05G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1136W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 317A
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
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APTM20DUM08TG Microchip Technology 8130-aptm20dum08tg-datasheet Description: MOSFET 2N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Part Status: Active
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APTM20HM08FG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 200V 208A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
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APTM20HM10FG Microchip Technology 8133-aptm20hm10fg-datasheet Description: MOSFET 4N-CH 200V 175A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 175A
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
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APTM20HM16FTG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 200V 104A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 104A
Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
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APTM20HM20FTG Microchip Technology 8135-aptm20hm20ftg-datasheet Description: MOSFET 4N-CH 200V 89A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 89A
Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
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APTM20HM20STG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 200V 89A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 89A
Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
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APTM20SKM04G APTM20SKM04G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 372A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V
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APTM20SKM08TG Microchip Technology 8139-aptm20skm08tg-datasheet Description: MOSFET N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 208A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Power Dissipation (Max): 781W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
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APTM20TAM16FPG APTM20TAM16FPG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 6N-CH 200V 104A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 104A
Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP6-P
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APTM20UM03FAG APTM20UM03FAG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 200V 580A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 580A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 290A, 10V
Power Dissipation (Max): 2270W (Tc)
Vgs(th) (Max) @ Id: 5V @ 15mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 840 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43300 pF @ 25 V
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APTM20UM04SAG Microchip Technology APTM20UM04SAG-Rev2.pdf Description: MOSFET N-CH 200V 417A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 417A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 208.5A, 10V
Power Dissipation (Max): 1560W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28800 pF @ 25 V
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APTM50AM17FG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 500V 180A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 180A
Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 90A, 10V
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
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APTM50AM24SG APTM50AM24SG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 500V 150A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V
Rds On (Max) @ Id, Vgs: 28mOhm @ 75A, 10V
Gate Charge (Qg) (Max) @ Vgs: 434nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Supplier Device Package: SP6
на замовлення 34 шт:
термін постачання 21-31 дні (днів)
1+15061.76 грн
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APTM50AM35FTG APTM50AM35FTG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 500V 99A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 99A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
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APTM50AM38FTG APTM50AM38FTG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8159 Description: MOSFET 2N-CH 500V 90A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 90A
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
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APTM50AM38STG APTM50AM38STG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8161 Description: MOSFET 2N-CH 500V 90A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 90A
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Part Status: Active
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+14491.31 грн
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APTM50DAM17G Microchip Technology index.php?option=com_docman&task=doc_download&gid=8164 Description: MOSFET N-CH 500V 180A SP6
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APTM50DDAM65T3G Microchip Technology index.php?option=com_docman&task=doc_download&gid=8170 Description: MOSFET 2N-CH 500V 51A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 51A
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP3
Part Status: Active
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APTM50H14FT3G APTM50H14FT3G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 500V 26A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 26A
Input Capacitance (Ciss) (Max) @ Vds: 3259pF @ 25V
Rds On (Max) @ Id, Vgs: 168mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SP3
Part Status: Active
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
1+7324.38 грн
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APTM50H15FT1G Microchip Technology APTM50H15UT1G-Rev0.pdf Description: MOSFET 4N-CH 500V 25A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 5448pF @ 25V
Rds On (Max) @ Id, Vgs: 180mOhm @ 21A, 10V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SP1
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APTM50HM35FG Microchip Technology APTM50HM35FG-Rev3.pdf Description: MOSFET 4N-CH 500V 99A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 99A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
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APTM50HM38FG Microchip Technology 8189-aptm50hm38fg-datasheet Description: MOSFET 4N-CH 500V 90A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 90A
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
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APTM50HM65FT3G APTM50HM65FT3G Microchip Technology 8190-aptm50hm65ft3g-datasheet Description: MOSFET 4N-CH 500V 51A SP3
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APTM50HM75STG APTM50HM75STG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8195 Description: MOSFET 4N-CH 500V 46A SP4
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+13239.94 грн
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APTM50SKM17G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 500V 180A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 90A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
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APTM50SKM19G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 500V 163A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 163A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 81.5A, 10V
Power Dissipation (Max): 1136W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 492 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22400 pF @ 25 V
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APTM50TAM65FPG APTM50TAM65FPG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8200 Description: MOSFET 6N-CH 500V 51A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 51A
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP6-P
Part Status: Active
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APTM10DSKM09T3G
Виробник: Microchip Technology
Description: MOSFET 2N-CH 100V 139A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 139A
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SP3
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APTM10DSKM19T3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET 2N-CH 100V 70A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SP3
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APTM10DUM02G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET 2N-CH 100V 495A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 495A
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SP6
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APTM10HM05FG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM10HM05FG
Виробник: Microchip Technology
Description: MOSFET 4N-CH 100V 278A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 780W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 278A
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: SP6
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APTM10HM09FT3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET 4N-CH 100V 139A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 139A
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SP3
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APTM10HM19FT3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM10HM19FT3G
Виробник: Microchip Technology
Description: MOSFET 4N-CH 100V 70A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SP3
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APTM10SKM02G index.php?option=com_docman&task=doc_download&gid=8058
Виробник: Microchip Technology
Description: MOSFET N-CH 100V 495A SP6
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APTM10SKM05TG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET N-CH 100V 278A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 278A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: SP4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 700 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
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APTM10TAM09FPG
APTM10TAM09FPG
Виробник: Microchip Technology
Description: MOSFET 6N-CH 100V 139A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 139A
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SP6-P
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APTM10UM01FAG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM10UM01FAG
Виробник: Microchip Technology
Description: MOSFET N-CH 100V 860A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 275A, 10V
Power Dissipation (Max): 2500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 12mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 60000 pF @ 25 V
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APTM10UM02FAG index.php?option=com_docman&task=doc_download&gid=8065
Виробник: Microchip Technology
Description: MOSFET N-CH 100V 570A SP6
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APTM120A15FG index.php?option=com_docman&task=doc_download&gid=8066
Виробник: Microchip Technology
Description: MOSFET 2N-CH 1200V 60A SP6
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APTM120A20DG index.php?option=com_docman&task=doc_download&gid=8067
Виробник: Microchip Technology
Description: MOSFET 2N-CH 1200V 50A SP6
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APTM120A20SG 8068-aptm120a20sg-datasheet
Виробник: Microchip Technology
Description: MOSFET 2N-CH 1200V 50A SP6
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APTM120A29FTG 8069-aptm120a29ftg-datasheet
Виробник: Microchip Technology
Description: MOSFET 2N-CH 1200V 34A SP4
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APTM120DA30T1G 8075-aptm120da30t1g-datasheet
Виробник: Microchip Technology
Description: MOSFET N-CH 1200V 31A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 25A, 10V
Power Dissipation (Max): 657W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V
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APTM120DU15G index.php?option=com_docman&task=doc_download&gid=8080
APTM120DU15G
Виробник: Microchip Technology
Description: MOSFET 2N-CH 1200V 60A SP6
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APTM120H140FT1G 8082-aptm120h140ft1g-datasheet
APTM120H140FT1G
Виробник: Microchip Technology
Description: MOSFET 4N-CH 1200V 8A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 3812pF @ 25V
Rds On (Max) @ Id, Vgs: 1.68Ohm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SP1
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APTM120H29FG APTM120H29FG-Rev2.pdf
APTM120H29FG
Виробник: Microchip Technology
Description: MOSFET 4N-CH 1200V 34A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 780W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 34A
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
Rds On (Max) @ Id, Vgs: 348mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
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APTM120U10SAG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM120U10SAG
Виробник: Microchip Technology
Description: MOSFET N-CH 1200V 116A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 58A, 10V
Power Dissipation (Max): 3290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 20mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 1100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V
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APTM120UM70DAG index.php?option=com_docman&task=doc_download&gid=8101
Виробник: Microchip Technology
Description: MOSFET N-CH 1200V 171A SP6
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APTM120UM70FAG index.php?option=com_docman&task=doc_download&gid=8103
Виробник: Microchip Technology
Description: MOSFET N-CH 1200V 171A SP6
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APTM20AM04FG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM20AM04FG
Виробник: Microchip Technology
Description: MOSFET 2N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 372A
Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Part Status: Active
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+18151.44 грн
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APTM20AM05FG APTM20AM05F.pdf
Виробник: Microchip Technology
Description: MOSFET 2N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1136W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 317A
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 158.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
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APTM20AM06SG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET 2N-CH 200V 300A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 300A
Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 150A, 10V
Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Supplier Device Package: SP6
Part Status: Active
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APTM20AM08FTG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET 2N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
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APTM20AM10FTG APTM20AM10FTG-Rev3.pdf
Виробник: Microchip Technology
Description: MOSFET 2N-CH 200V 175A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 175A
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
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APTM20AM10STG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET 2N-CH 200V 175A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 175A
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
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APTM20DAM04G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 372A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V
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APTM20DAM05G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM20DAM05G
Виробник: Microchip Technology
Description: MOSFET N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 317A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V
Power Dissipation (Max): 1136W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 448 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27400 pF @ 25 V
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APTM20DAM08TG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 208A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Power Dissipation (Max): 781W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
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APTM20DUM04G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM20DUM04G
Виробник: Microchip Technology
Description: MOSFET 2N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 372A
Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
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APTM20DUM05G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET 2N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1136W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 317A
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
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APTM20DUM08TG 8130-aptm20dum08tg-datasheet
Виробник: Microchip Technology
Description: MOSFET 2N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Part Status: Active
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APTM20HM08FG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET 4N-CH 200V 208A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
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APTM20HM10FG 8133-aptm20hm10fg-datasheet
Виробник: Microchip Technology
Description: MOSFET 4N-CH 200V 175A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 175A
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
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APTM20HM16FTG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET 4N-CH 200V 104A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 104A
Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
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APTM20HM20FTG 8135-aptm20hm20ftg-datasheet
Виробник: Microchip Technology
Description: MOSFET 4N-CH 200V 89A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 89A
Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
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APTM20HM20STG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET 4N-CH 200V 89A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 89A
Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
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APTM20SKM04G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM20SKM04G
Виробник: Microchip Technology
Description: MOSFET N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 372A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V
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APTM20SKM08TG 8139-aptm20skm08tg-datasheet
Виробник: Microchip Technology
Description: MOSFET N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 208A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Power Dissipation (Max): 781W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
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APTM20TAM16FPG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM20TAM16FPG
Виробник: Microchip Technology
Description: MOSFET 6N-CH 200V 104A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 104A
Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP6-P
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APTM20UM03FAG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM20UM03FAG
Виробник: Microchip Technology
Description: MOSFET N-CH 200V 580A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 580A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 290A, 10V
Power Dissipation (Max): 2270W (Tc)
Vgs(th) (Max) @ Id: 5V @ 15mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 840 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43300 pF @ 25 V
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APTM20UM04SAG APTM20UM04SAG-Rev2.pdf
Виробник: Microchip Technology
Description: MOSFET N-CH 200V 417A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 417A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 208.5A, 10V
Power Dissipation (Max): 1560W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28800 pF @ 25 V
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APTM50AM17FG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET 2N-CH 500V 180A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 180A
Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 90A, 10V
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
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APTM50AM24SG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM50AM24SG
Виробник: Microchip Technology
Description: MOSFET 2N-CH 500V 150A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V
Rds On (Max) @ Id, Vgs: 28mOhm @ 75A, 10V
Gate Charge (Qg) (Max) @ Vgs: 434nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Supplier Device Package: SP6
на замовлення 34 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+15061.76 грн
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APTM50AM35FTG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM50AM35FTG
Виробник: Microchip Technology
Description: MOSFET 2N-CH 500V 99A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 99A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
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APTM50AM38FTG index.php?option=com_docman&task=doc_download&gid=8159
APTM50AM38FTG
Виробник: Microchip Technology
Description: MOSFET 2N-CH 500V 90A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 90A
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
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APTM50AM38STG index.php?option=com_docman&task=doc_download&gid=8161
APTM50AM38STG
Виробник: Microchip Technology
Description: MOSFET 2N-CH 500V 90A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 90A
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Part Status: Active
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+14491.31 грн
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APTM50DAM17G index.php?option=com_docman&task=doc_download&gid=8164
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 180A SP6
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APTM50DDAM65T3G index.php?option=com_docman&task=doc_download&gid=8170
Виробник: Microchip Technology
Description: MOSFET 2N-CH 500V 51A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 51A
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP3
Part Status: Active
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APTM50H14FT3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM50H14FT3G
Виробник: Microchip Technology
Description: MOSFET 4N-CH 500V 26A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 26A
Input Capacitance (Ciss) (Max) @ Vds: 3259pF @ 25V
Rds On (Max) @ Id, Vgs: 168mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SP3
Part Status: Active
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7324.38 грн
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APTM50H15FT1G APTM50H15UT1G-Rev0.pdf
Виробник: Microchip Technology
Description: MOSFET 4N-CH 500V 25A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 5448pF @ 25V
Rds On (Max) @ Id, Vgs: 180mOhm @ 21A, 10V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SP1
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APTM50HM35FG APTM50HM35FG-Rev3.pdf
Виробник: Microchip Technology
Description: MOSFET 4N-CH 500V 99A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 99A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
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APTM50HM38FG 8189-aptm50hm38fg-datasheet
Виробник: Microchip Technology
Description: MOSFET 4N-CH 500V 90A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 90A
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
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APTM50HM65FT3G 8190-aptm50hm65ft3g-datasheet
APTM50HM65FT3G
Виробник: Microchip Technology
Description: MOSFET 4N-CH 500V 51A SP3
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APTM50HM75STG index.php?option=com_docman&task=doc_download&gid=8195
APTM50HM75STG
Виробник: Microchip Technology
Description: MOSFET 4N-CH 500V 46A SP4
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+13239.94 грн
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APTM50SKM17G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 180A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 90A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
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APTM50SKM19G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 163A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 163A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 81.5A, 10V
Power Dissipation (Max): 1136W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 492 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22400 pF @ 25 V
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APTM50TAM65FPG index.php?option=com_docman&task=doc_download&gid=8200
APTM50TAM65FPG
Виробник: Microchip Technology
Description: MOSFET 6N-CH 500V 51A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 51A
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP6-P
Part Status: Active
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