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APTGT400SK120G Microchip Technology 7869-aptgt400sk120g-datasheet Description: IGBT MODULE 1200V 560A 1785W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 560 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1785 W
Current - Collector Cutoff (Max): 750 µA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
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APTGT400U120D4G Microchip Technology 7872-aptgt400u120d4g-datasheet Description: IGBT MODULE 1200V 600A 2250W D4
Packaging: Bulk
Package / Case: D4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: D4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 8 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
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APTGT400U170D4G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT MODULE 1700V 800A 2080W D4
Packaging: Bulk
Package / Case: D4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: D4
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2080 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 33 nF @ 25 V
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APTGT450DA60G Microchip Technology 7876-aptgt450da60g-datasheet Description: IGBT MODULE 600V 550A 1750W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 550 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1750 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
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APTGT450SK60G Microchip Technology 7878-aptgt450sk60g-datasheet Description: IGBT MODULE 600V 550A 1750W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 550 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1750 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
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APTGT50A120T1G APTGT50A120T1G Microchip Technology 7880-aptgt50a120t1g-datasheet Description: IGBT MODULE 1200V 75A 277W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 277 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
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APTGT50A170T1G Microchip Technology 7883-aptgt50a170t1g-datasheet Description: IGBT MODULE 1700V 75A 312W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
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APTGT50A170TG Microchip Technology 7884-aptgt50a170tg-datasheet Description: IGBT MODULE 1700V 75A 312W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
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APTGT50DA120TG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT MODULE 1200V 75A 277W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 277 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
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APTGT50DDA120T3G APTGT50DDA120T3G Microchip Technology 7891-aptgt50dda120t3g-datasheet Description: IGBT MODULE 1200V 75A 270W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 270 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
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APTGT50DDA60T3G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT MODULE 600V 80A 176W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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APTGT50DH120TG APTGT50DH120TG Microchip Technology 7894-aptgt50dh120tg-datasheet Description: IGBT MODULE 1200V 75A 277W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Asymmetrical Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 277 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
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APTGT50DH170TG Microchip Technology 7895-aptgt50dh170tg-datasheet Description: IGBT MODULE 1700V 75A 312W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Asymmetrical Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
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APTGT50DU120TG Microchip Technology 7900-aptgt50du120tg-datasheet Description: IGBT MODULE 1200V 75A 277W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 277 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
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APTGT50H120T3G APTGT50H120T3G Microchip Technology Description: IGBT MODULE 1200V 75A 270W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 270 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
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APTGT50H170TG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT MODULE 1700V 75A 312W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
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APTGT50H60T1G Microchip Technology 7905-aptgt50h60t1g-datasheet Description: IGBT MODULE 600V 80A 176W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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APTGT50H60T3G APTGT50H60T3G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT MODULE 600V 80A 176W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
1+4253.66 грн
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APTGT50SK120TG Microchip Technology 7908-aptgt50sk120tg-datasheet Description: IGBT MODULE 1200V 75A 277W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 277 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
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APTGT50SK170T1G APTGT50SK170T1G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT MODULE 1700V 75A 312W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
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APTGT50SK170TG Microchip Technology 7911-aptgt50sk170tg-datasheet Description: IGBT MODULE 1700V 75A 312W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
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APTGT50TA60PG Microchip Technology 7913-aptgt50ta60pg-datasheet Description: IGBT MODULE 600V 80A 176W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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APTGT50TDU170PG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT MODULE 1700V 70A 310W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 310 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
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APTGT50TDU60PG Microchip Technology 7915-aptgt50tdu60pg-datasheet Description: IGBT MODULE 600V 80A 176W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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APTGT50X60T3G APTGT50X60T3G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT MODULE 600V 80A 176W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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APTGT600A60G APTGT600A60G Microchip Technology 7924-aptgt600a60g-datasheet Description: IGBT MODULE 600V 700A 2300W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 700 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 2300 W
Current - Collector Cutoff (Max): 750 µA
Input Capacitance (Cies) @ Vce: 49 nF @ 25 V
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
1+18098.68 грн
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APTGT600DA60G Microchip Technology 7925-aptgt600da60g-datasheet Description: IGBT MODULE 600V 700A 2300W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 700 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 2300 W
Current - Collector Cutoff (Max): 750 µA
Input Capacitance (Cies) @ Vce: 49 nF @ 25 V
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APTGT600DU60G Microchip Technology 7926-aptgt600du60g-datasheet Description: IGBT MODULE 600V 700A 2300W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 700 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 2300 W
Current - Collector Cutoff (Max): 750 µA
Input Capacitance (Cies) @ Vce: 49 nF @ 25 V
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APTGT600SK60G APTGT600SK60G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT MODULE 600V 700A 2300W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 700 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 2300 W
Current - Collector Cutoff (Max): 750 µA
Input Capacitance (Cies) @ Vce: 49 nF @ 25 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
1+18589.99 грн
25+12786.63 грн
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APTGT600U120D4G APTGT600U120D4G Microchip Technology 7929-aptgt600u120d4g-datasheet Description: IGBT MODULE 1200V 900A 2500W D4
Packaging: Bulk
Package / Case: D4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: D4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 40 nF @ 25 V
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APTGT600U170D4G APTGT600U170D4G Microchip Technology 7931-aptgt600u170d4g-datasheet Description: IGBT MODULE 1700V 1100A 2900W D4
Packaging: Bulk
Package / Case: D4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: D4
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2900 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 51 nF @ 25 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
1+19990.57 грн
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APTGT750U60D4G Microchip Technology 7932-aptgt750u60d4g-datasheet Description: IGBT MODULE 600V 1000A 2300W D4
Packaging: Bulk
Package / Case: D4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 800A
NTC Thermistor: No
Supplier Device Package: D4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 2300 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 49 nF @ 25 V
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APTGT75A60T1G APTGT75A60T1G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT MODULE 600V 100A 250W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
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APTGT75DA120TG APTGT75DA120TG Microchip Technology index.php?option=com_docman&task=doc_download&gid=7941 Description: IGBT MODULE 1200V 110A 357W SP4
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APTGT75DA60T1G APTGT75DA60T1G Microchip Technology 7945-aptgt75da60t1g-datasheet Description: IGBT MODULE 600V 100A 250W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
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APTGT75DDA60T3G Microchip Technology index.php?option=com_docman&task=doc_download&gid=7946 Description: IGBT MODULE 600V 100A 250W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
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APTGT75H60T1G APTGT75H60T1G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT MODULE 600V 100A 250W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
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APTGT75H60T3G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT MODULE 600V 100A 250W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
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APTGT75TA120PG APTGT75TA120PG Microchip Technology APTGT75TA120PG-Rev2.pdf Description: IGBT MODULE 1200V 100A 350W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V
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APTGT75TDU120PG APTGT75TDU120PG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT MODULE 1200V 100A 350W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V
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APTGT75TDU60PG Microchip Technology APTGT75TDU60PG-Rev1.pdf Description: IGBT MODULE 600V 100A 250W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
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APTGT75X60T3G Microchip Technology index.php?option=com_docman&task=doc_download&gid=7974 Description: IGBT MODULE 600V 100A 250W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
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APTM100A13SCG APTM100A13SCG Microchip Technology APTM100A13SCG-Rev4.pdf Description: MOSFET 2N-CH 1000V 65A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 65A
Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
Rds On (Max) @ Id, Vgs: 156mOhm @ 32.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Supplier Device Package: SP6
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+18325.38 грн
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APTM100A23STG Microchip Technology index.php?option=com_docman&task=doc_download&gid=7995 Description: MOSFET 2N-CH 1000V 36A SP4
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APTM100AM90FG APTM100AM90FG Microchip Technology APTM100AM90FG-Rev3.pdf Description: MOSFET 2N-CH 1000V 78A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 78A
Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V
Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
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APTM100DAM90G Microchip Technology 8004-aptm100dam90g-datasheet Description: MOSFET N-CH 1000V 78A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 744 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20700 pF @ 25 V
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APTM100DSK35T3G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 1000V 22A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 22A
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP3
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APTM100H35FT3G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 1000V 22A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 22A
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP3
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APTM100H35FTG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 1000V 22A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 22A
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
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APTM100H45SCTG APTM100H45SCTG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8014 Description: MOSFET 4N-CH 1000V 18A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 18A
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+16641.22 грн
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APTM100H45STG APTM100H45STG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8015 Description: MOSFET 4N-CH 1000V 18A SP4
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
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APTM100SK33T1G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 1000V 23A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V
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APTM100TA35FPG APTM100TA35FPG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 6N-CH 1000V 22A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 22A
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP6-P
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APTM100UM45DAG APTM100UM45DAG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 1000V 215A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 107.5A, 10V
Power Dissipation (Max): 5000W (Tc)
Vgs(th) (Max) @ Id: 5V @ 30mA
Supplier Device Package: SP6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 1602 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 42700 pF @ 25 V
на замовлення 34 шт:
термін постачання 21-31 дні (днів)
1+22766.17 грн
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APTM100UM45FAG APTM100UM45FAG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 1000V 215A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 107.5A, 10V
Power Dissipation (Max): 5000W (Tc)
Vgs(th) (Max) @ Id: 5V @ 30mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 1602 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 42700 pF @ 25 V
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APTM100UM60FAG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 1000V 129A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 64.5A, 10V
Power Dissipation (Max): 2272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 15mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 1116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 31100 pF @ 25 V
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APTM100UM65DAG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 1000V 145A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V
Power Dissipation (Max): 3250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 20mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V
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APTM100UM65SAG APTM100UM65SAG Microchip Technology 8037-aptm100um65sag-datasheet Description: MOSFET N-CH 1000V 145A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V
Power Dissipation (Max): 3250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 20mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V
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APTM10AM02FG APTM10AM02FG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 100V 495A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 495A
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SP6
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APTM10DAM02G Microchip Technology index.php?option=com_docman&task=doc_download&gid=8042 Description: MOSFET N-CH 100V 495A SP6
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APTGT400SK120G 7869-aptgt400sk120g-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 560A 1785W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 560 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1785 W
Current - Collector Cutoff (Max): 750 µA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
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APTGT400U120D4G 7872-aptgt400u120d4g-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 600A 2250W D4
Packaging: Bulk
Package / Case: D4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: D4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 8 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
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APTGT400U170D4G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: IGBT MODULE 1700V 800A 2080W D4
Packaging: Bulk
Package / Case: D4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: D4
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2080 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 33 nF @ 25 V
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APTGT450DA60G 7876-aptgt450da60g-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 600V 550A 1750W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 550 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1750 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
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APTGT450SK60G 7878-aptgt450sk60g-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 600V 550A 1750W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 550 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1750 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
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APTGT50A120T1G 7880-aptgt50a120t1g-datasheet
APTGT50A120T1G
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 75A 277W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 277 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
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APTGT50A170T1G 7883-aptgt50a170t1g-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 1700V 75A 312W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
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APTGT50A170TG 7884-aptgt50a170tg-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 1700V 75A 312W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
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APTGT50DA120TG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 75A 277W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 277 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
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APTGT50DDA120T3G 7891-aptgt50dda120t3g-datasheet
APTGT50DDA120T3G
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 75A 270W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 270 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
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APTGT50DDA60T3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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APTGT50DH120TG 7894-aptgt50dh120tg-datasheet
APTGT50DH120TG
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 75A 277W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Asymmetrical Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 277 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
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APTGT50DH170TG 7895-aptgt50dh170tg-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 1700V 75A 312W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Asymmetrical Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
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APTGT50DU120TG 7900-aptgt50du120tg-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 75A 277W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 277 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
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APTGT50H120T3G
APTGT50H120T3G
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 75A 270W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 270 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
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APTGT50H170TG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: IGBT MODULE 1700V 75A 312W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
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APTGT50H60T1G 7905-aptgt50h60t1g-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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APTGT50H60T3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTGT50H60T3G
Виробник: Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4253.66 грн
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APTGT50SK120TG 7908-aptgt50sk120tg-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 75A 277W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 277 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
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APTGT50SK170T1G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTGT50SK170T1G
Виробник: Microchip Technology
Description: IGBT MODULE 1700V 75A 312W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
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APTGT50SK170TG 7911-aptgt50sk170tg-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 1700V 75A 312W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
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APTGT50TA60PG 7913-aptgt50ta60pg-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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APTGT50TDU170PG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: IGBT MODULE 1700V 70A 310W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 310 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
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APTGT50TDU60PG 7915-aptgt50tdu60pg-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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APTGT50X60T3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTGT50X60T3G
Виробник: Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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APTGT600A60G 7924-aptgt600a60g-datasheet
APTGT600A60G
Виробник: Microchip Technology
Description: IGBT MODULE 600V 700A 2300W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 700 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 2300 W
Current - Collector Cutoff (Max): 750 µA
Input Capacitance (Cies) @ Vce: 49 nF @ 25 V
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+18098.68 грн
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APTGT600DA60G 7925-aptgt600da60g-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 600V 700A 2300W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 700 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 2300 W
Current - Collector Cutoff (Max): 750 µA
Input Capacitance (Cies) @ Vce: 49 nF @ 25 V
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APTGT600DU60G 7926-aptgt600du60g-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 600V 700A 2300W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 700 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 2300 W
Current - Collector Cutoff (Max): 750 µA
Input Capacitance (Cies) @ Vce: 49 nF @ 25 V
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APTGT600SK60G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTGT600SK60G
Виробник: Microchip Technology
Description: IGBT MODULE 600V 700A 2300W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 700 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 2300 W
Current - Collector Cutoff (Max): 750 µA
Input Capacitance (Cies) @ Vce: 49 nF @ 25 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+18589.99 грн
25+12786.63 грн
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APTGT600U120D4G 7929-aptgt600u120d4g-datasheet
APTGT600U120D4G
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 900A 2500W D4
Packaging: Bulk
Package / Case: D4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: D4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 40 nF @ 25 V
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APTGT600U170D4G 7931-aptgt600u170d4g-datasheet
APTGT600U170D4G
Виробник: Microchip Technology
Description: IGBT MODULE 1700V 1100A 2900W D4
Packaging: Bulk
Package / Case: D4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: D4
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2900 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 51 nF @ 25 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+19990.57 грн
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APTGT750U60D4G 7932-aptgt750u60d4g-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 600V 1000A 2300W D4
Packaging: Bulk
Package / Case: D4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 800A
NTC Thermistor: No
Supplier Device Package: D4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 2300 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 49 nF @ 25 V
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APTGT75A60T1G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTGT75A60T1G
Виробник: Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
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APTGT75DA120TG index.php?option=com_docman&task=doc_download&gid=7941
APTGT75DA120TG
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 110A 357W SP4
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APTGT75DA60T1G 7945-aptgt75da60t1g-datasheet
APTGT75DA60T1G
Виробник: Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
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APTGT75DDA60T3G index.php?option=com_docman&task=doc_download&gid=7946
Виробник: Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
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APTGT75H60T1G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTGT75H60T1G
Виробник: Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
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APTGT75H60T3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
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APTGT75TA120PG APTGT75TA120PG-Rev2.pdf
APTGT75TA120PG
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 100A 350W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V
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APTGT75TDU120PG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTGT75TDU120PG
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 100A 350W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V
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APTGT75TDU60PG APTGT75TDU60PG-Rev1.pdf
Виробник: Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
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APTGT75X60T3G index.php?option=com_docman&task=doc_download&gid=7974
Виробник: Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
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APTM100A13SCG APTM100A13SCG-Rev4.pdf
APTM100A13SCG
Виробник: Microchip Technology
Description: MOSFET 2N-CH 1000V 65A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 65A
Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
Rds On (Max) @ Id, Vgs: 156mOhm @ 32.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Supplier Device Package: SP6
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+18325.38 грн
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APTM100A23STG index.php?option=com_docman&task=doc_download&gid=7995
Виробник: Microchip Technology
Description: MOSFET 2N-CH 1000V 36A SP4
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APTM100AM90FG APTM100AM90FG-Rev3.pdf
APTM100AM90FG
Виробник: Microchip Technology
Description: MOSFET 2N-CH 1000V 78A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 78A
Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V
Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
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APTM100DAM90G 8004-aptm100dam90g-datasheet
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 78A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 744 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20700 pF @ 25 V
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APTM100DSK35T3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET 2N-CH 1000V 22A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 22A
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP3
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APTM100H35FT3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET 4N-CH 1000V 22A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 22A
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP3
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APTM100H35FTG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET 4N-CH 1000V 22A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 22A
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
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APTM100H45SCTG index.php?option=com_docman&task=doc_download&gid=8014
APTM100H45SCTG
Виробник: Microchip Technology
Description: MOSFET 4N-CH 1000V 18A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 18A
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+16641.22 грн
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APTM100H45STG index.php?option=com_docman&task=doc_download&gid=8015
APTM100H45STG
Виробник: Microchip Technology
Description: MOSFET 4N-CH 1000V 18A SP4
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
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APTM100SK33T1G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 23A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V
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APTM100TA35FPG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM100TA35FPG
Виробник: Microchip Technology
Description: MOSFET 6N-CH 1000V 22A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 22A
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP6-P
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APTM100UM45DAG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM100UM45DAG
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 215A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 107.5A, 10V
Power Dissipation (Max): 5000W (Tc)
Vgs(th) (Max) @ Id: 5V @ 30mA
Supplier Device Package: SP6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 1602 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 42700 pF @ 25 V
на замовлення 34 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+22766.17 грн
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APTM100UM45FAG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM100UM45FAG
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 215A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 107.5A, 10V
Power Dissipation (Max): 5000W (Tc)
Vgs(th) (Max) @ Id: 5V @ 30mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 1602 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 42700 pF @ 25 V
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APTM100UM60FAG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 129A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 64.5A, 10V
Power Dissipation (Max): 2272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 15mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 1116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 31100 pF @ 25 V
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APTM100UM65DAG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 145A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V
Power Dissipation (Max): 3250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 20mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V
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APTM100UM65SAG 8037-aptm100um65sag-datasheet
APTM100UM65SAG
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 145A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V
Power Dissipation (Max): 3250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 20mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V
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APTM10AM02FG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM10AM02FG
Виробник: Microchip Technology
Description: MOSFET 2N-CH 100V 495A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 495A
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SP6
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APTM10DAM02G index.php?option=com_docman&task=doc_download&gid=8042
Виробник: Microchip Technology
Description: MOSFET N-CH 100V 495A SP6
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