Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (354113) > Сторінка 467 з 5902
| Фото | Назва | Виробник | Інформація |
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APTGT600U170D4G | Microchip Technology |
 Description: IGBT MODULE 1700V 1100A 2900W D4Packaging: Bulk Package / Case: D4 Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 600A NTC Thermistor: No Supplier Device Package: D4 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 1100 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 2900 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 51 nF @ 25 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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| APTGT750U60D4G | Microchip Technology |
Description: IGBT MODULE 600V 1000A 2300W D4 Packaging: Bulk Package / Case: D4 Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 800A NTC Thermistor: No Supplier Device Package: D4 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 1000 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 2300 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 49 nF @ 25 V |
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APTGT75A60T1G | Microchip Technology |
Description: IGBT MODULE 600V 100A 250W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V |
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APTGT75DA120TG | Microchip Technology |
Description: IGBT MODULE 1200V 110A 357W SP4 |
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APTGT75DA60T1G | Microchip Technology |
Description: IGBT MODULE 600V 100A 250W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V |
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| APTGT75DDA60T3G | Microchip Technology |
Description: IGBT MODULE 600V 100A 250W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Dual Boost Chopper Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V |
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APTGT75H60T1G | Microchip Technology |
Description: IGBT MODULE 600V 100A 250W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V |
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| APTGT75H60T3G | Microchip Technology |
Description: IGBT MODULE 600V 100A 250W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V |
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APTGT75TA120PG | Microchip Technology |
Description: IGBT MODULE 1200V 100A 350W SP6P Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A NTC Thermistor: No Supplier Device Package: SP6-P IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 350 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V |
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APTGT75TDU120PG | Microchip Technology |
Description: IGBT MODULE 1200V 100A 350W SP6P Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Triple, Dual - Common Source Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A NTC Thermistor: No Supplier Device Package: SP6-P IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 350 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V |
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| APTGT75TDU60PG | Microchip Technology |
Description: IGBT MODULE 600V 100A 250W SP6P Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Triple, Dual - Common Source Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A NTC Thermistor: No Supplier Device Package: SP6-P IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V |
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| APTGT75X60T3G | Microchip Technology |
Description: IGBT MODULE 600V 100A 250W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V |
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APTM100A13SCG | Microchip Technology |
Description: MOSFET 2N-CH 1000V 65A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1250W Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 65A Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V Rds On (Max) @ Id, Vgs: 156mOhm @ 32.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V Vgs(th) (Max) @ Id: 5V @ 6mA Supplier Device Package: SP6 |
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| APTM100A23STG | Microchip Technology |
Description: MOSFET 2N-CH 1000V 36A SP4 |
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APTM100AM90FG | Microchip Technology |
Description: MOSFET 2N-CH 1000V 78A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1250W Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 78A Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V Vgs(th) (Max) @ Id: 5V @ 10mA Supplier Device Package: SP6 |
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| APTM100DAM90G | Microchip Technology |
Description: MOSFET N-CH 1000V 78A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 5V @ 10mA Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 744 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20700 pF @ 25 V |
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| APTM100DSK35T3G | Microchip Technology |
Description: MOSFET 2N-CH 1000V 22A SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 390W Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 22A Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SP3 |
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APTM100H45SCTG | Microchip Technology |
Description: MOSFET 4N-CH 1000V 18A SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 357W Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 18A Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SP4 Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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APTM100H45STG | Microchip Technology |
Description: MOSFET 4N-CH 1000V 18A SP4 |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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| APTM100SK33T1G | Microchip Technology |
Description: MOSFET N-CH 1000V 23A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SP1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V |
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APTM100UM45DAG | Microchip Technology |
Description: MOSFET N-CH 1000V 215A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 215A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 107.5A, 10V Power Dissipation (Max): 5000W (Tc) Vgs(th) (Max) @ Id: 5V @ 30mA Supplier Device Package: SP6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 1602 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 42700 pF @ 25 V |
на замовлення 34 шт: термін постачання 21-31 дні (днів) |
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| APTM100UM65DAG | Microchip Technology |
Description: MOSFET N-CH 1000V 145A SP6 |
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APTM100UM65SAG | Microchip Technology |
Description: MOSFET N-CH 1000V 145A SP6 |
на замовлення 28 шт: термін постачання 21-31 дні (днів) |
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APTM10AM02FG | Microchip Technology |
Description: MOSFET 2N-CH 100V 495A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1250W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 495A Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: SP6 |
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| APTM10DAM02G | Microchip Technology |
Description: MOSFET N-CH 100V 495A SP6 |
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| APTM10DSKM09T3G | Microchip Technology |
Description: MOSFET 2N-CH 100V 139A SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 390W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 139A Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: SP3 |
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| APTM10DSKM19T3G | Microchip Technology |
Description: MOSFET 2N-CH 100V 70A SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 208W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: SP3 |
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| APTM10DUM02G | Microchip Technology |
Description: MOSFET 2N-CH 100V 495A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1250W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 495A Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: SP6 |
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| APTM10HM09FT3G | Microchip Technology |
Description: MOSFET 4N-CH 100V 139A SP3 |
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APTM10HM19FT3G | Microchip Technology |
Description: MOSFET 4N-CH 100V 70A SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 208W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: SP3 |
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| APTM10SKM02G | Microchip Technology |
Description: MOSFET N-CH 100V 495A SP6 |
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| APTM10SKM05TG | Microchip Technology |
Description: MOSFET N-CH 100V 278A SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 278A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V Power Dissipation (Max): 780W (Tc) Vgs(th) (Max) @ Id: 4V @ 5mA Supplier Device Package: SP4 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 700 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V |
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APTM10UM01FAG | Microchip Technology |
Description: MOSFET N-CH 100V 860A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 860A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 275A, 10V Power Dissipation (Max): 2500W (Tc) Vgs(th) (Max) @ Id: 4V @ 12mA Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 60000 pF @ 25 V |
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| APTM10UM02FAG | Microchip Technology |
Description: MOSFET N-CH 100V 570A SP6 |
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| APTM120A15FG | Microchip Technology |
Description: MOSFET 2N-CH 1200V 60A SP6 |
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| APTM120A20DG | Microchip Technology |
Description: MOSFET 2N-CH 1200V 50A SP6 |
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| APTM120A20SG | Microchip Technology |
Description: MOSFET 2N-CH 1200V 50A SP6 |
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| APTM120A29FTG | Microchip Technology |
Description: MOSFET 2N-CH 1200V 34A SP4 |
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| APTM120DA30T1G | Microchip Technology |
Description: MOSFET N-CH 1200V 31A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 25A, 10V Power Dissipation (Max): 657W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SP1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V |
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APTM120DU15G | Microchip Technology |
Description: MOSFET 2N-CH 1200V 60A SP6 |
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APTM120H140FT1G | Microchip Technology |
Description: MOSFET 4N-CH 1200V 8A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 208W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 3812pF @ 25V Rds On (Max) @ Id, Vgs: 1.68Ohm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: SP1 |
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APTM120H29FG | Microchip Technology |
Description: MOSFET 4N-CH 1200V 34A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 780W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 34A Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V Rds On (Max) @ Id, Vgs: 348mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP6 |
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APTM120U10SAG | Microchip Technology |
Description: MOSFET N-CH 1200V 116A SP6 |
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| APTM120UM70DAG | Microchip Technology |
Description: MOSFET N-CH 1200V 171A SP6 |
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| APTM120UM70FAG | Microchip Technology |
Description: MOSFET N-CH 1200V 171A SP6 |
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APTM20AM04FG | Microchip Technology |
Description: MOSFET 2N-CH 200V 372A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1250W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 372A Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V Vgs(th) (Max) @ Id: 5V @ 10mA Supplier Device Package: SP6 Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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| APTM20AM05FG | Microchip Technology |
Description: MOSFET 2N-CH 200V 317A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1136W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 317A Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V Rds On (Max) @ Id, Vgs: 5mOhm @ 158.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V Vgs(th) (Max) @ Id: 5V @ 10mA Supplier Device Package: SP6 |
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| APTM20AM06SG | Microchip Technology |
Description: MOSFET 2N-CH 200V 300A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1250W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 300A Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V Rds On (Max) @ Id, Vgs: 7.2mOhm @ 150A, 10V Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V Vgs(th) (Max) @ Id: 5V @ 6mA Supplier Device Package: SP6 Part Status: Active |
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APTM20DAM05G | Microchip Technology |
Description: MOSFET N-CH 200V 317A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 317A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V Power Dissipation (Max): 1136W (Tc) Vgs(th) (Max) @ Id: 5V @ 10mA Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 448 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27400 pF @ 25 V |
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APTM20DUM04G | Microchip Technology |
Description: MOSFET 2N-CH 200V 372A SP6 |
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| APTM20DUM05G | Microchip Technology |
Description: MOSFET 2N-CH 200V 317A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1136W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 317A Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V Vgs(th) (Max) @ Id: 5V @ 10mA Supplier Device Package: SP6 |
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| APTM20DUM08TG | Microchip Technology |
Description: MOSFET 2N-CH 200V 208A SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 781W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 208A Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP4 Part Status: Active |
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| APTM20HM20FTG | Microchip Technology |
Description: MOSFET 4N-CH 200V 89A SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 357W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 89A Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SP4 |
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| APTM20HM20STG | Microchip Technology |
Description: MOSFET 4N-CH 200V 89A SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 357W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 89A Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SP4 |
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APTM20SKM04G | Microchip Technology |
Description: MOSFET N-CH 200V 372A SP6 |
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| APTM20SKM08TG | Microchip Technology |
Description: MOSFET N-CH 200V 208A SP4 |
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APTM20UM03FAG | Microchip Technology |
Description: MOSFET N-CH 200V 580A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 580A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 290A, 10V Power Dissipation (Max): 2270W (Tc) Vgs(th) (Max) @ Id: 5V @ 15mA Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 840 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 43300 pF @ 25 V |
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| APTM20UM04SAG | Microchip Technology |
Description: MOSFET N-CH 200V 417A SP6 |
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APTM50AM24SG | Microchip Technology |
Description: MOSFET 2N-CH 500V 150A SP6 |
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APTM50AM35FTG | Microchip Technology |
Description: MOSFET 2N-CH 500V 99A SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 781W Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 99A Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP4 |
товар відсутній |
| APTGT600U170D4G |
|
Виробник: Microchip Technology
Description: IGBT MODULE 1700V 1100A 2900W D4
Packaging: Bulk
Package / Case: D4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: D4
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2900 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 51 nF @ 25 V
Description: IGBT MODULE 1700V 1100A 2900W D4
Packaging: Bulk
Package / Case: D4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: D4
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2900 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 51 nF @ 25 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 29572.86 грн |
| APTGT750U60D4G |
|
Виробник: Microchip Technology
Description: IGBT MODULE 600V 1000A 2300W D4
Packaging: Bulk
Package / Case: D4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 800A
NTC Thermistor: No
Supplier Device Package: D4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 2300 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 49 nF @ 25 V
Description: IGBT MODULE 600V 1000A 2300W D4
Packaging: Bulk
Package / Case: D4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 800A
NTC Thermistor: No
Supplier Device Package: D4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 2300 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 49 nF @ 25 V
товар відсутній
| APTGT75A60T1G |
|
Виробник: Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Description: IGBT MODULE 600V 100A 250W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
товар відсутній
| APTGT75DA120TG |
|
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 110A 357W SP4
Description: IGBT MODULE 1200V 110A 357W SP4
товар відсутній
| APTGT75DA60T1G |
|
Виробник: Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Description: IGBT MODULE 600V 100A 250W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
товар відсутній
| APTGT75DDA60T3G |
|
Виробник: Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Description: IGBT MODULE 600V 100A 250W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
товар відсутній
| APTGT75H60T1G |
|
Виробник: Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Description: IGBT MODULE 600V 100A 250W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
товар відсутній
| APTGT75H60T3G |
|
Виробник: Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Description: IGBT MODULE 600V 100A 250W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
товар відсутній
| APTGT75TA120PG |
|
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 100A 350W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V
Description: IGBT MODULE 1200V 100A 350W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V
товар відсутній
| APTGT75TDU120PG |
|
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 100A 350W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V
Description: IGBT MODULE 1200V 100A 350W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V
товар відсутній
| APTGT75TDU60PG |
|
Виробник: Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Description: IGBT MODULE 600V 100A 250W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
товар відсутній
| APTGT75X60T3G |
|
Виробник: Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Description: IGBT MODULE 600V 100A 250W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
товар відсутній
| APTM100A13SCG |
Виробник: Microchip Technology
Description: MOSFET 2N-CH 1000V 65A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 65A
Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
Rds On (Max) @ Id, Vgs: 156mOhm @ 32.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Supplier Device Package: SP6
Description: MOSFET 2N-CH 1000V 65A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 65A
Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
Rds On (Max) @ Id, Vgs: 156mOhm @ 32.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Supplier Device Package: SP6
товар відсутній
| APTM100AM90FG |
|
Виробник: Microchip Technology
Description: MOSFET 2N-CH 1000V 78A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 78A
Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V
Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Description: MOSFET 2N-CH 1000V 78A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 78A
Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V
Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
товар відсутній
| APTM100DAM90G |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 78A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 744 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20700 pF @ 25 V
Description: MOSFET N-CH 1000V 78A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 744 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20700 pF @ 25 V
товар відсутній
| APTM100DSK35T3G |
|
Виробник: Microchip Technology
Description: MOSFET 2N-CH 1000V 22A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 22A
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP3
Description: MOSFET 2N-CH 1000V 22A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 22A
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP3
товар відсутній
| APTM100H45SCTG |
|
Виробник: Microchip Technology
Description: MOSFET 4N-CH 1000V 18A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 18A
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Part Status: Active
Description: MOSFET 4N-CH 1000V 18A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 18A
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 15783.71 грн |
| APTM100H45STG |
|
Виробник: Microchip Technology
Description: MOSFET 4N-CH 1000V 18A SP4
Description: MOSFET 4N-CH 1000V 18A SP4
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| APTM100SK33T1G |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 23A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V
Description: MOSFET N-CH 1000V 23A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V
товар відсутній
| APTM100UM45DAG |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 215A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 107.5A, 10V
Power Dissipation (Max): 5000W (Tc)
Vgs(th) (Max) @ Id: 5V @ 30mA
Supplier Device Package: SP6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 1602 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 42700 pF @ 25 V
Description: MOSFET N-CH 1000V 215A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 107.5A, 10V
Power Dissipation (Max): 5000W (Tc)
Vgs(th) (Max) @ Id: 5V @ 30mA
Supplier Device Package: SP6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 1602 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 42700 pF @ 25 V
на замовлення 34 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 31866.88 грн |
| APTM100UM65DAG |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 145A SP6
Description: MOSFET N-CH 1000V 145A SP6
товар відсутній
| APTM100UM65SAG |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 145A SP6
Description: MOSFET N-CH 1000V 145A SP6
на замовлення 28 шт:
термін постачання 21-31 дні (днів)| APTM10AM02FG |
|
Виробник: Microchip Technology
Description: MOSFET 2N-CH 100V 495A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 495A
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SP6
Description: MOSFET 2N-CH 100V 495A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 495A
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SP6
товар відсутній
| APTM10DSKM09T3G |
|
Виробник: Microchip Technology
Description: MOSFET 2N-CH 100V 139A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 139A
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SP3
Description: MOSFET 2N-CH 100V 139A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 139A
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SP3
товар відсутній
| APTM10DSKM19T3G |
|
Виробник: Microchip Technology
Description: MOSFET 2N-CH 100V 70A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SP3
Description: MOSFET 2N-CH 100V 70A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SP3
товар відсутній
| APTM10DUM02G |
|
Виробник: Microchip Technology
Description: MOSFET 2N-CH 100V 495A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 495A
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SP6
Description: MOSFET 2N-CH 100V 495A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 495A
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SP6
товар відсутній
| APTM10HM09FT3G |
|
Виробник: Microchip Technology
Description: MOSFET 4N-CH 100V 139A SP3
Description: MOSFET 4N-CH 100V 139A SP3
товар відсутній
| APTM10HM19FT3G |
|
Виробник: Microchip Technology
Description: MOSFET 4N-CH 100V 70A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SP3
Description: MOSFET 4N-CH 100V 70A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SP3
товар відсутній
| APTM10SKM05TG |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 100V 278A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 278A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: SP4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 700 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
Description: MOSFET N-CH 100V 278A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 278A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: SP4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 700 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
товар відсутній
| APTM10UM01FAG |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 100V 860A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 275A, 10V
Power Dissipation (Max): 2500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 12mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 60000 pF @ 25 V
Description: MOSFET N-CH 100V 860A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 275A, 10V
Power Dissipation (Max): 2500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 12mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 60000 pF @ 25 V
товар відсутній
| APTM120DA30T1G |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 1200V 31A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 25A, 10V
Power Dissipation (Max): 657W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V
Description: MOSFET N-CH 1200V 31A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 25A, 10V
Power Dissipation (Max): 657W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V
товар відсутній
| APTM120H140FT1G |
|
Виробник: Microchip Technology
Description: MOSFET 4N-CH 1200V 8A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 3812pF @ 25V
Rds On (Max) @ Id, Vgs: 1.68Ohm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SP1
Description: MOSFET 4N-CH 1200V 8A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 3812pF @ 25V
Rds On (Max) @ Id, Vgs: 1.68Ohm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SP1
товар відсутній
| APTM120H29FG |
|
Виробник: Microchip Technology
Description: MOSFET 4N-CH 1200V 34A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 780W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 34A
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
Rds On (Max) @ Id, Vgs: 348mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
Description: MOSFET 4N-CH 1200V 34A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 780W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 34A
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
Rds On (Max) @ Id, Vgs: 348mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
товар відсутній
| APTM120UM70DAG |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 1200V 171A SP6
Description: MOSFET N-CH 1200V 171A SP6
товар відсутній
| APTM120UM70FAG |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 1200V 171A SP6
Description: MOSFET N-CH 1200V 171A SP6
товар відсутній
| APTM20AM04FG |
|
Виробник: Microchip Technology
Description: MOSFET 2N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 372A
Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Part Status: Active
Description: MOSFET 2N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 372A
Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 25066.13 грн |
| APTM20AM05FG |
|
Виробник: Microchip Technology
Description: MOSFET 2N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1136W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 317A
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 158.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Description: MOSFET 2N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1136W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 317A
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 158.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
товар відсутній
| APTM20AM06SG |
|
Виробник: Microchip Technology
Description: MOSFET 2N-CH 200V 300A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 300A
Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 150A, 10V
Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Supplier Device Package: SP6
Part Status: Active
Description: MOSFET 2N-CH 200V 300A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 300A
Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 150A, 10V
Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Supplier Device Package: SP6
Part Status: Active
товар відсутній
| APTM20DAM05G |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 317A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V
Power Dissipation (Max): 1136W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 448 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27400 pF @ 25 V
Description: MOSFET N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 317A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V
Power Dissipation (Max): 1136W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 448 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27400 pF @ 25 V
товар відсутній
| APTM20DUM05G |
|
Виробник: Microchip Technology
Description: MOSFET 2N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1136W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 317A
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Description: MOSFET 2N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1136W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 317A
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
товар відсутній
| APTM20DUM08TG |
|
Виробник: Microchip Technology
Description: MOSFET 2N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Part Status: Active
Description: MOSFET 2N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Part Status: Active
товар відсутній
| APTM20HM20FTG |
|
Виробник: Microchip Technology
Description: MOSFET 4N-CH 200V 89A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 89A
Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Description: MOSFET 4N-CH 200V 89A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 89A
Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
товар відсутній
| APTM20HM20STG |
|
Виробник: Microchip Technology
Description: MOSFET 4N-CH 200V 89A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 89A
Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Description: MOSFET 4N-CH 200V 89A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 89A
Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
товар відсутній
| APTM20UM03FAG |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 200V 580A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 580A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 290A, 10V
Power Dissipation (Max): 2270W (Tc)
Vgs(th) (Max) @ Id: 5V @ 15mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 840 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43300 pF @ 25 V
Description: MOSFET N-CH 200V 580A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 580A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 290A, 10V
Power Dissipation (Max): 2270W (Tc)
Vgs(th) (Max) @ Id: 5V @ 15mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 840 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43300 pF @ 25 V
товар відсутній
| APTM50AM35FTG |
|
Виробник: Microchip Technology
Description: MOSFET 2N-CH 500V 99A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 99A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Description: MOSFET 2N-CH 500V 99A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 99A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
товар відсутній