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JANTX2N2323 JANTX2N2323 Microchip Technology 6024-2n2323-datasheet Description: SCR 50V TO5-3
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Supplier Device Package: TO-5-3
Grade: Military
Part Status: Obsolete
Voltage - Off State: 50 V
Qualification: MIL-PRF-19500/276
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JANTX2N2324A JANTX2N2324A Microchip Technology 6024-2n2323-datasheet Description: SCR 100V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Supplier Device Package: TO-5
Grade: Military
Part Status: Obsolete
Voltage - Off State: 100 V
Qualification: MIL-PRF-19500/276
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JANTX2N2324AS JANTX2N2324AS Microchip Technology 6024-2n2323-datasheet Description: SCR 100V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Supplier Device Package: TO-5
Grade: Military
Part Status: Obsolete
Voltage - Off State: 100 V
Qualification: MIL-PRF-19500/276
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JANTX2N2324S JANTX2N2324S Microchip Technology 6024-2n2323-datasheet Description: SCR 100V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 100 V
Grade: Military
Qualification: MIL-PRF-19500/276
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JANTX2N2904A JANTX2N2904A Microchip Technology 122694-lds-0186-datasheet Description: TRANS PNP 60V 0.6A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/290
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JANTX2N3055 JANTX2N3055 Microchip Technology 6038-2n3055ne-datasheet Description: TRANS NPN 70V 15A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 3.3A, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 6 W
Grade: Military
Qualification: MIL-PRF-19500/407
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JANTX2N3439UA JANTX2N3439UA Microchip Technology 125353-lds-0022-3-datasheet Description: TRANS NPN 350V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
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JANTX2N3442 JANTX2N3442 Microchip Technology 6043-2n3442-datasheet Description: TRANS NPN 140V 10A TO-3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 6 W
Grade: Military
Qualification: MIL-PRF-19500/307
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JANTX2N3506 JANTX2N3506 Microchip Technology 124336-lds-0016-datasheet Description: TRANS NPN 40V 3A TO-39
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JANTX2N3637 JANTX2N3637 Microchip Technology 8968-lds-0156-datasheet Description: TRANS PNP 175V 1A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANTX2N3740 JANTX2N3740 Microchip Technology 8828-lds-0021-pdf Description: TRANS PNP 60V 4A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Grade: Military
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 25 W
Qualification: MIL-PRF-19500/441
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JANTX2N3772 JANTX2N3772 Microchip Technology 6055-2n3771-pdf Description: TRANS NPN 60V 20A TO-3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 4A, 20A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 4V
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 6 W
Grade: Military
Qualification: MIL-PRF-19500/518
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JANTX2N3792 JANTX2N3792 Microchip Technology 6056-2n3791-pdf Description: TRANS PNP 80V 10A TO-3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 5 W
Grade: Military
Qualification: MIL-PRF-19500/379
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JANTX2N4261 JANTX2N4261 Microchip Technology 8963-lds-0150-pdf Description: TRANS PNP 15V 0.03A TO72
Packaging: Bulk
Package / Case: TO-72-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V
Supplier Device Package: TO-72
Grade: Military
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Qualification: MIL-PRF-19500/511
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JANTX2N4405 JANTX2N4405 Microchip Technology Description: TRANS NPN TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: 200°C (TJ)
Supplier Device Package: TO-39
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JANTX2N5415 JANTX2N5415 Microchip Technology 132282-lds-0305-datasheet Description: TRANS PNP 200V 1A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
Grade: Military
Qualification: MIL-PRF-19500/485
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Jantx2N5416S Jantx2N5416S Microchip Technology 132283-lds-0305-1-datasheet Description: TRANS PNP 300V 1A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Grade: Military
Qualification: MIL-PRF-19500/485
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JANTX2N5663 JANTX2N5663 Microchip Technology 122692-lds-0184-datasheet Description: TRANS NPN 300V 2A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 400mA, 2A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 5V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
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JANTX2N5665 JANTX2N5665 Microchip Technology 2N5664-65%2C66%28S%2CU3%29%2C67%28S%29.pdf Description: TRANS NPN 300V 5A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 2.5 W
Qualification: MIL-PRF-19500/455
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JANTX2N5684 Microchip Technology 6097-2n5683-pdf Description: TRANS NPN 80V 50A TO-3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A
Current - Collector Cutoff (Max): 5µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5A, 2V
Supplier Device Package: TO-3
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 300 W
Qualification: MIL-PRF-19500/466
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JANTX2N6051 JANTX2N6051 Microchip Technology 132511-lds-0306-datasheet Description: TRANS PNP DARL 80V 12A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-204AA (TO-3)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 150 W
Qualification: MIL-PRF-19500/501
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JANTX2N6052 JANTX2N6052 Microchip Technology 132511-lds-0306-datasheet Description: TRANS PNP DARL 100V 12A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-204AA (TO-3)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 150 W
Qualification: MIL-PRF-19500/501
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JANTX2N6284 JANTX2N6284 Microchip Technology 132512-lds-0308-datasheet Description: TRANS NPN DARL 100V 20A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1250 @ 10A, 3V
Supplier Device Package: TO-204AA (TO-3)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 175 W
Qualification: MIL-PRF-19500/504
на замовлення 138 шт:
термін постачання 21-31 дні (днів)
1+3543.89 грн
100+3169.14 грн
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JANTX2N6298 JANTX2N6298 Microchip Technology 132306-lds-0310-datasheet Description: TRANS PNP DARL 60V 8A
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JANTXV1N3595-1 JANTXV1N3595-1 Microchip Technology 8838-lds-0026-pdf Description: DIODE STD 125V 150MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Qualification: MIL-PRF-19500/241
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JANTXV1N4099-1 JANTXV1N4099-1 Microchip Technology 1N4614-1-1n4627e3+%2C1N4099-1_1N4135-1_e3.pdf Description: DIODE ZENER 6.8V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5.2 V
Qualification: MIL-PRF-19500/435
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JANTXV1N4101-1 JANTXV1N4101-1 Microchip Technology 1N4614-1-1n4627e3+%2C1N4099-1_1N4135-1_e3.pdf Description: DIODE ZENER 8.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6.3 V
Grade: Military
Qualification: MIL-PRF-19500/435
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JANTXV1N4107-1 JANTXV1N4107-1 Microchip Technology 1N4614-1-1n4627e3+%2C1N4099-1_1N4135-1_e3.pdf Description: DIODE ZENER 13V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.9 V
Grade: Military
Qualification: MIL-PRF-19500/435
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JANTXV1N4150-1 JANTXV1N4150-1 Microchip Technology 5806-1n4150-1-datasheet Description: DIODE STANDARD 50V 200MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/231
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JANTXV1N4150UR-1 JANTXV1N4150UR-1 Microchip Technology 5808-1n4150ur-1-datasheet Description: DIODE STANDARD 50V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/231
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JANTXV1N4465 JANTXV1N4465 Microchip Technology 122691-lds-0183-datasheet Description: DIODE ZENER 10V 1.5W DO204AL
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JANTXV1N4467 JANTXV1N4467 Microchip Technology 1N4460-1N4496.1N6485-1N6491.pdf Description: DIODE ZENER 12V 1.5W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Military
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 200 nA @ 9.6 V
Qualification: MIL-PRF-19500/406
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JANTXV1N4467US JANTXV1N4467US Microchip Technology 1N4460US-1N4496US.1N6485US-1NN6491US.pdf Description: DIODE ZENER 12V 1.5W D5A
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: D-5A
Grade: Military
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 200 nA @ 9.6 V
Qualification: MIL-PRF-19500/406
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JANTXV1N4614-1 JANTXV1N4614-1 Microchip Technology 1N4614-1-1n4627e3+%2C1N4099-1_1N4135-1_e3.pdf Description: DIODE ZENER 1.8V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 1.8 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3.5 µA @ 1 V
Grade: Military
Qualification: MIL-PRF-19500/435
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JANTXV1N4618UR-1 JANTXV1N4618UR-1 Microchip Technology 5801-lds-0245-datasheet Description: DIODE ZENER 2.7V 500MW DO213AA
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JANTXV1N4624UR-1 JANTXV1N4624UR-1 Microchip Technology 1N4614-1-1n4627e3-1N4099-1-1N4135-1.pdf Description: DIODE ZENER 4.7V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 1550 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Grade: Military
Qualification: MIL-PRF-19500/435
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JANTXV1N4627-1 JANTXV1N4627-1 Microchip Technology 129734-lds-0245-2-datasheet Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-35
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5 V
Qualification: MIL-PRF-19500/435
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JANTXV1N4627UR-1 JANTXV1N4627UR-1 Microchip Technology 5801-lds-0245-datasheet Description: DIODE ZENER 6.2V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5 V
Qualification: MIL-PRF-19500/435
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JANTXV1N4995 JANTXV1N4995 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 360V 5W E AXIAL
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
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JANTXV1N5650A JANTXV1N5650A Microchip Technology LDS-0096-REV3.pdf Description: TVS DIODE 43.6VWM 70.1VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.4A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/500
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
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JANTXV1N5651A JANTXV1N5651A Microchip Technology 8922-lds-0096-datasheet Description: TVS DIODE 47.8VWM 77VC DO13
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JANTXV1N5665A JANTXV1N5665A Microchip Technology LDS-0096-REV3.pdf Description: TVS DIODE 171VWM 274VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/500
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+14482.99 грн
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JANTXV1N5711-1 JANTXV1N5711-1 Microchip Technology 8865-lds-0040-datasheet Description: DIODE SCHOTTKY 50V 33MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
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JANTXV1N5711UR-1 JANTXV1N5711UR-1 Microchip Technology 131890-lds-0040-1-datasheet Description: DIODE SCHOTTKY 50V 33MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
на замовлення 159 шт:
термін постачання 21-31 дні (днів)
1+1934.94 грн
100+1730.54 грн
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JANTXV1N5819-1 JANTXV1N5819-1 Microchip Technology 131894-lds-0301-datasheet Description: DIODE SCHOTTKY 45V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Grade: Military
Qualification: MIL-PRF-19500/586
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JANTXV1N6317US JANTXV1N6317US Microchip Technology 11083-lds-0193-1-datasheet Description: DIODE ZENER 5.1V 500MW MELF
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
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JANTXV1N6491US JANTXV1N6491US Microchip Technology 124793-lds-0183-1-datasheet Description: DIODE ZENER 5.6V 1.5W D5A
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JANTXV1N746A-1 JANTXV1N746A-1 Microchip Technology 131821-lds-0288-datasheet Description: DIODE ZENER 3.3V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: MIL-PRF-19500/127
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JANTXV1N750A-1 JANTXV1N750A-1 Microchip Technology 1N746A-1-1N759A-1%2C1N4370A-1-1N4372A-1.pdf Description: DIODE ZENER 4.7V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Qualification: MIL-PRF-19500/127
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JANTXV1N751A-1 JANTXV1N751A-1 Microchip Technology 1N746A-1-1N759A-1%2C1N4370A-1-1N4372A-1.pdf Description: DIODE ZENER 5.1V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: MIL-PRF-19500/127
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JANTXV1N753A-1 JANTXV1N753A-1 Microchip Technology 131821-lds-0288-datasheet Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+427.66 грн
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JANTXV1N758A-1 JANTXV1N758A-1 Microchip Technology 131821-lds-0288-datasheet Description: DIODE ZENER 10V 500MW DO35
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JANTXV1N759A-1 JANTXV1N759A-1 Microchip Technology 1N746A-1-1N759A-1%2C1N4370A-1-1N4372A-1.pdf Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9 V
Qualification: MIL-PRF-19500/127
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JANTXV1N965B-1 JANTXV1N965B-1 Microchip Technology 1N957B-1-1N992B-1%28e3%29.pdf Description: DIODE ZENER 15V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Grade: Military
Qualification: MIL-PRF-19500/117
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JANTXV2N1613L JANTXV2N1613L Microchip Technology 123516-lds-0200-datasheet Description: TRANS NPN 30V 0.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/181
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
1+25518.10 грн
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JANTXV2N2369A JANTXV2N2369A Microchip Technology 8893-lds-0057-datasheet Description: TRANS NPN 15V TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-206AA (TO-18)
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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JANTXV2N2432A JANTXV2N2432A Microchip Technology 6026-2n2432-datasheet Description: TRANS NPN 45V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 0.15mV @ 500µA, 10V
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Military
Qualification: MIL-PRF-19500/313
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JANTXV2N2920 JANTXV2N2920 Microchip Technology Description: TRANS 2NPN 60V 0.03A TO-78
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: 200°C (TJ)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/355
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JANTXV2N3637 JANTXV2N3637 Microchip Technology 8968-lds-0156-datasheet Description: TRANS PNP 175V 1A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANTXV2N5686 JANTXV2N5686 Microchip Technology 2N5685%2C%202N5686.pdf Description: TRANS NPN 80V 50A TO-3
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 25A, 2V
Supplier Device Package: TO-3
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 300 W
Qualification: MIL-PRF-19500/464
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+37255.22 грн
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JANTX2N2323 6024-2n2323-datasheet
JANTX2N2323
Виробник: Microchip Technology
Description: SCR 50V TO5-3
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Supplier Device Package: TO-5-3
Grade: Military
Part Status: Obsolete
Voltage - Off State: 50 V
Qualification: MIL-PRF-19500/276
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JANTX2N2324A 6024-2n2323-datasheet
JANTX2N2324A
Виробник: Microchip Technology
Description: SCR 100V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Supplier Device Package: TO-5
Grade: Military
Part Status: Obsolete
Voltage - Off State: 100 V
Qualification: MIL-PRF-19500/276
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JANTX2N2324AS 6024-2n2323-datasheet
JANTX2N2324AS
Виробник: Microchip Technology
Description: SCR 100V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Supplier Device Package: TO-5
Grade: Military
Part Status: Obsolete
Voltage - Off State: 100 V
Qualification: MIL-PRF-19500/276
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JANTX2N2324S 6024-2n2323-datasheet
JANTX2N2324S
Виробник: Microchip Technology
Description: SCR 100V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 100 V
Grade: Military
Qualification: MIL-PRF-19500/276
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JANTX2N2904A 122694-lds-0186-datasheet
JANTX2N2904A
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/290
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JANTX2N3055 6038-2n3055ne-datasheet
JANTX2N3055
Виробник: Microchip Technology
Description: TRANS NPN 70V 15A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 3.3A, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 6 W
Grade: Military
Qualification: MIL-PRF-19500/407
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JANTX2N3439UA 125353-lds-0022-3-datasheet
JANTX2N3439UA
Виробник: Microchip Technology
Description: TRANS NPN 350V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
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JANTX2N3442 6043-2n3442-datasheet
JANTX2N3442
Виробник: Microchip Technology
Description: TRANS NPN 140V 10A TO-3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 6 W
Grade: Military
Qualification: MIL-PRF-19500/307
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JANTX2N3506 124336-lds-0016-datasheet
JANTX2N3506
Виробник: Microchip Technology
Description: TRANS NPN 40V 3A TO-39
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JANTX2N3637 8968-lds-0156-datasheet
JANTX2N3637
Виробник: Microchip Technology
Description: TRANS PNP 175V 1A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANTX2N3740 8828-lds-0021-pdf
JANTX2N3740
Виробник: Microchip Technology
Description: TRANS PNP 60V 4A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Grade: Military
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 25 W
Qualification: MIL-PRF-19500/441
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JANTX2N3772 6055-2n3771-pdf
JANTX2N3772
Виробник: Microchip Technology
Description: TRANS NPN 60V 20A TO-3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 4A, 20A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 4V
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 6 W
Grade: Military
Qualification: MIL-PRF-19500/518
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JANTX2N3792 6056-2n3791-pdf
JANTX2N3792
Виробник: Microchip Technology
Description: TRANS PNP 80V 10A TO-3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 5 W
Grade: Military
Qualification: MIL-PRF-19500/379
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JANTX2N4261 8963-lds-0150-pdf
JANTX2N4261
Виробник: Microchip Technology
Description: TRANS PNP 15V 0.03A TO72
Packaging: Bulk
Package / Case: TO-72-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V
Supplier Device Package: TO-72
Grade: Military
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Qualification: MIL-PRF-19500/511
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JANTX2N4405
JANTX2N4405
Виробник: Microchip Technology
Description: TRANS NPN TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: 200°C (TJ)
Supplier Device Package: TO-39
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JANTX2N5415 132282-lds-0305-datasheet
JANTX2N5415
Виробник: Microchip Technology
Description: TRANS PNP 200V 1A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
Grade: Military
Qualification: MIL-PRF-19500/485
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Jantx2N5416S 132283-lds-0305-1-datasheet
Jantx2N5416S
Виробник: Microchip Technology
Description: TRANS PNP 300V 1A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Grade: Military
Qualification: MIL-PRF-19500/485
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JANTX2N5663 122692-lds-0184-datasheet
JANTX2N5663
Виробник: Microchip Technology
Description: TRANS NPN 300V 2A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 400mA, 2A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 5V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
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JANTX2N5665 2N5664-65%2C66%28S%2CU3%29%2C67%28S%29.pdf
JANTX2N5665
Виробник: Microchip Technology
Description: TRANS NPN 300V 5A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 2.5 W
Qualification: MIL-PRF-19500/455
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JANTX2N5684 6097-2n5683-pdf
Виробник: Microchip Technology
Description: TRANS NPN 80V 50A TO-3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A
Current - Collector Cutoff (Max): 5µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5A, 2V
Supplier Device Package: TO-3
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 300 W
Qualification: MIL-PRF-19500/466
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JANTX2N6051 132511-lds-0306-datasheet
JANTX2N6051
Виробник: Microchip Technology
Description: TRANS PNP DARL 80V 12A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-204AA (TO-3)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 150 W
Qualification: MIL-PRF-19500/501
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JANTX2N6052 132511-lds-0306-datasheet
JANTX2N6052
Виробник: Microchip Technology
Description: TRANS PNP DARL 100V 12A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-204AA (TO-3)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 150 W
Qualification: MIL-PRF-19500/501
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JANTX2N6284 132512-lds-0308-datasheet
JANTX2N6284
Виробник: Microchip Technology
Description: TRANS NPN DARL 100V 20A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1250 @ 10A, 3V
Supplier Device Package: TO-204AA (TO-3)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 175 W
Qualification: MIL-PRF-19500/504
на замовлення 138 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3543.89 грн
100+3169.14 грн
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JANTX2N6298 132306-lds-0310-datasheet
JANTX2N6298
Виробник: Microchip Technology
Description: TRANS PNP DARL 60V 8A
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JANTXV1N3595-1 8838-lds-0026-pdf
JANTXV1N3595-1
Виробник: Microchip Technology
Description: DIODE STD 125V 150MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Qualification: MIL-PRF-19500/241
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JANTXV1N4099-1 1N4614-1-1n4627e3+%2C1N4099-1_1N4135-1_e3.pdf
JANTXV1N4099-1
Виробник: Microchip Technology
Description: DIODE ZENER 6.8V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5.2 V
Qualification: MIL-PRF-19500/435
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JANTXV1N4101-1 1N4614-1-1n4627e3+%2C1N4099-1_1N4135-1_e3.pdf
JANTXV1N4101-1
Виробник: Microchip Technology
Description: DIODE ZENER 8.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6.3 V
Grade: Military
Qualification: MIL-PRF-19500/435
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JANTXV1N4107-1 1N4614-1-1n4627e3+%2C1N4099-1_1N4135-1_e3.pdf
JANTXV1N4107-1
Виробник: Microchip Technology
Description: DIODE ZENER 13V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.9 V
Grade: Military
Qualification: MIL-PRF-19500/435
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JANTXV1N4150-1 5806-1n4150-1-datasheet
JANTXV1N4150-1
Виробник: Microchip Technology
Description: DIODE STANDARD 50V 200MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/231
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JANTXV1N4150UR-1 5808-1n4150ur-1-datasheet
JANTXV1N4150UR-1
Виробник: Microchip Technology
Description: DIODE STANDARD 50V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/231
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JANTXV1N4465 122691-lds-0183-datasheet
JANTXV1N4465
Виробник: Microchip Technology
Description: DIODE ZENER 10V 1.5W DO204AL
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JANTXV1N4467 1N4460-1N4496.1N6485-1N6491.pdf
JANTXV1N4467
Виробник: Microchip Technology
Description: DIODE ZENER 12V 1.5W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Military
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 200 nA @ 9.6 V
Qualification: MIL-PRF-19500/406
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JANTXV1N4467US 1N4460US-1N4496US.1N6485US-1NN6491US.pdf
JANTXV1N4467US
Виробник: Microchip Technology
Description: DIODE ZENER 12V 1.5W D5A
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: D-5A
Grade: Military
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 200 nA @ 9.6 V
Qualification: MIL-PRF-19500/406
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JANTXV1N4614-1 1N4614-1-1n4627e3+%2C1N4099-1_1N4135-1_e3.pdf
JANTXV1N4614-1
Виробник: Microchip Technology
Description: DIODE ZENER 1.8V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 1.8 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3.5 µA @ 1 V
Grade: Military
Qualification: MIL-PRF-19500/435
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JANTXV1N4618UR-1 5801-lds-0245-datasheet
JANTXV1N4618UR-1
Виробник: Microchip Technology
Description: DIODE ZENER 2.7V 500MW DO213AA
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JANTXV1N4624UR-1 1N4614-1-1n4627e3-1N4099-1-1N4135-1.pdf
JANTXV1N4624UR-1
Виробник: Microchip Technology
Description: DIODE ZENER 4.7V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 1550 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Grade: Military
Qualification: MIL-PRF-19500/435
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JANTXV1N4627-1 129734-lds-0245-2-datasheet
JANTXV1N4627-1
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-35
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5 V
Qualification: MIL-PRF-19500/435
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JANTXV1N4627UR-1 5801-lds-0245-datasheet
JANTXV1N4627UR-1
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5 V
Qualification: MIL-PRF-19500/435
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JANTXV1N4995 10913-sa5-37-datasheet
JANTXV1N4995
Виробник: Microchip Technology
Description: DIODE ZENER 360V 5W E AXIAL
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
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JANTXV1N5650A LDS-0096-REV3.pdf
JANTXV1N5650A
Виробник: Microchip Technology
Description: TVS DIODE 43.6VWM 70.1VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.4A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/500
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+15931.37 грн
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JANTXV1N5651A 8922-lds-0096-datasheet
JANTXV1N5651A
Виробник: Microchip Technology
Description: TVS DIODE 47.8VWM 77VC DO13
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JANTXV1N5665A LDS-0096-REV3.pdf
JANTXV1N5665A
Виробник: Microchip Technology
Description: TVS DIODE 171VWM 274VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/500
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+14482.99 грн
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JANTXV1N5711-1 8865-lds-0040-datasheet
JANTXV1N5711-1
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 50V 33MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
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JANTXV1N5711UR-1 131890-lds-0040-1-datasheet
JANTXV1N5711UR-1
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 50V 33MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
на замовлення 159 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1934.94 грн
100+1730.54 грн
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JANTXV1N5819-1 131894-lds-0301-datasheet
JANTXV1N5819-1
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 45V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Grade: Military
Qualification: MIL-PRF-19500/586
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JANTXV1N6317US 11083-lds-0193-1-datasheet
JANTXV1N6317US
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 500MW MELF
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
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JANTXV1N6491US 124793-lds-0183-1-datasheet
JANTXV1N6491US
Виробник: Microchip Technology
Description: DIODE ZENER 5.6V 1.5W D5A
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JANTXV1N746A-1 131821-lds-0288-datasheet
JANTXV1N746A-1
Виробник: Microchip Technology
Description: DIODE ZENER 3.3V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: MIL-PRF-19500/127
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JANTXV1N750A-1 1N746A-1-1N759A-1%2C1N4370A-1-1N4372A-1.pdf
JANTXV1N750A-1
Виробник: Microchip Technology
Description: DIODE ZENER 4.7V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Qualification: MIL-PRF-19500/127
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JANTXV1N751A-1 1N746A-1-1N759A-1%2C1N4370A-1-1N4372A-1.pdf
JANTXV1N751A-1
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: MIL-PRF-19500/127
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JANTXV1N753A-1 131821-lds-0288-datasheet
JANTXV1N753A-1
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+427.66 грн
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JANTXV1N758A-1 131821-lds-0288-datasheet
JANTXV1N758A-1
Виробник: Microchip Technology
Description: DIODE ZENER 10V 500MW DO35
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JANTXV1N759A-1 1N746A-1-1N759A-1%2C1N4370A-1-1N4372A-1.pdf
JANTXV1N759A-1
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9 V
Qualification: MIL-PRF-19500/127
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JANTXV1N965B-1 1N957B-1-1N992B-1%28e3%29.pdf
JANTXV1N965B-1
Виробник: Microchip Technology
Description: DIODE ZENER 15V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Grade: Military
Qualification: MIL-PRF-19500/117
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JANTXV2N1613L 123516-lds-0200-datasheet
JANTXV2N1613L
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/181
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+25518.10 грн
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JANTXV2N2369A 8893-lds-0057-datasheet
JANTXV2N2369A
Виробник: Microchip Technology
Description: TRANS NPN 15V TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-206AA (TO-18)
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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JANTXV2N2432A 6026-2n2432-datasheet
JANTXV2N2432A
Виробник: Microchip Technology
Description: TRANS NPN 45V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 0.15mV @ 500µA, 10V
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Military
Qualification: MIL-PRF-19500/313
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JANTXV2N2920
JANTXV2N2920
Виробник: Microchip Technology
Description: TRANS 2NPN 60V 0.03A TO-78
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: 200°C (TJ)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/355
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JANTXV2N3637 8968-lds-0156-datasheet
JANTXV2N3637
Виробник: Microchip Technology
Description: TRANS PNP 175V 1A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANTXV2N5686 2N5685%2C%202N5686.pdf
JANTXV2N5686
Виробник: Microchip Technology
Description: TRANS NPN 80V 50A TO-3
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 25A, 2V
Supplier Device Package: TO-3
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 300 W
Qualification: MIL-PRF-19500/464
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+37255.22 грн
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