Продукція > MICROSEMI CORPORATION > Всі товари виробника MICROSEMI CORPORATION (11124) > Сторінка 127 з 186
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| APTGT75A170D1G | Microsemi Corporation |
Description: IGBT MODULE 1700V 120A 520W D1 Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V Current - Collector Cutoff (Max): 5 mA Power - Max: 520 W Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 120 A IGBT Type: Trench Field Stop Supplier Device Package: D1 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A Configuration: Half Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: D1 Packaging: Bulk |
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| APTGT75DA170D1G | Microsemi Corporation | Description: IGBT MODULE 1700V 120A 520W D1 |
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| APTGT25DA120D1G | Microsemi Corporation |
 Description: IGBT MODULE 1200V 40A 140W D1 |
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| APTGT50A120D1G | Microsemi Corporation | Description: IGBT MODULE 1200V 75A 270W D1 |
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1.5KE250CAE3/TR13 | Microsemi Corporation |
Description: TVS DIODE 214VWM 344VC CASE-1 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5A Voltage - Reverse Standoff (Typ): 214V Supplier Device Package: CASE-1 Bidirectional Channels: 1 Voltage - Breakdown (Min): 237V Voltage - Clamping (Max) @ Ipp: 344V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Obsolete |
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Мінімальне замовлення: 2000 шт В кошику од. на суму грн. |
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SK310B/TR13 | Microsemi Corporation |
Description: DIODE SCHOTTKY 100V 3A DO214AA Current - Reverse Leakage @ Vr: 500 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
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SK310BE3/TR13 | Microsemi Corporation |
Description: DIODE SCHOTTKY 100V 3A SMB Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 500 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A |
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| SK310/TR13 | Microsemi Corporation |
Description: DIODE SCHOTTKY 3A 100V SMCJ Part Status: Active Packaging: Tape & Reel (TR) |
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| SK310E3/TR13 | Microsemi Corporation |
Description: DIODE SCHOTTKY 3A 100V SMCJ Part Status: Active Packaging: Tape & Reel (TR) |
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| MXPLAD30KP280A | Microsemi Corporation |
Description: TVS DIODE 280VWM 451VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 66A Voltage - Reverse Standoff (Typ): 280V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 311V Voltage - Clamping (Max) @ Ipp: 451V Power - Peak Pulse: 30000W (30kW) Power Line Protection: No Part Status: Active |
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| MXPLAD30KP350Ae3 | Microsemi Corporation |
Description: TVS DIODE 350VWM 564VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 53A Voltage - Reverse Standoff (Typ): 350V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 389V Voltage - Clamping (Max) @ Ipp: 564V Power - Peak Pulse: 30000W (30kW) Power Line Protection: No Part Status: Active |
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| MXPLAD30KP300A | Microsemi Corporation |
Description: TVS DIODE 300VWM 483VC PLAD |
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| MXPLAD30KP300Ae3 | Microsemi Corporation |
Description: TVS DIODE 300VWM 483VC PLAD |
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| MXPLAD30KP350A | Microsemi Corporation |
Description: TVS DIODE 350VWM 564VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 53A Voltage - Reverse Standoff (Typ): 350V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 389V Voltage - Clamping (Max) @ Ipp: 564V Power - Peak Pulse: 30000W (30kW) Power Line Protection: No Part Status: Active |
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| MXPLAD30KP220A | Microsemi Corporation |
Description: TVS DIODE 220VWM 356VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 84A Voltage - Reverse Standoff (Typ): 220V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 245V Voltage - Clamping (Max) @ Ipp: 356V Power - Peak Pulse: 30000W (30kW) Power Line Protection: No Part Status: Active |
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| MXPLAD30KP220Ae3 | Microsemi Corporation |
Description: TVS DIODE 220VWM 356VC PLAD |
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MXPLAD30KP400Ae3 | Microsemi Corporation |
Description: TVS DIODE 400VWM 644VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 46A Voltage - Reverse Standoff (Typ): 400V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 444V Voltage - Clamping (Max) @ Ipp: 644V Power - Peak Pulse: 30000W (30kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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JANTX1N4480CUS | Microsemi Corporation |
Description: DIODE ZENER 43V 1.5W D5A |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
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JANTX1N4488DUS | Microsemi Corporation |
Description: DIODE ZENER 91V 1.5W D5A Qualification: MIL-PRF-19500/406 Current - Reverse Leakage @ Vr: 250 nA @ 72.8 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Power - Max: 1.5 W Grade: Military Supplier Device Package: D-5A Impedance (Max) (Zzt): 200 Ohms Voltage - Zener (Nom) (Vz): 91 V Operating Temperature: -65°C ~ 175°C Mounting Type: Surface Mount Package / Case: SQ-MELF, A Tolerance: ±1% Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
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JANTX1N4485DUS | Microsemi Corporation |
Description: DIODE ZENER 68V 1.5W D5A |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
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JANTX1N4481DUS | Microsemi Corporation |
Description: DIODE ZENER 47V 1.5W D5A |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
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JANTX1N4482CUS | Microsemi Corporation |
Description: DIODE ZENER 51V 1.5W D5A |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
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P6KE51AE3/TR13 | Microsemi Corporation |
Description: TVS DIODE 43.6VWM 70.1VC AXIAL Part Status: Active Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 70.1V Voltage - Breakdown (Min): 48.5V Unidirectional Channels: 1 Supplier Device Package: Axial Voltage - Reverse Standoff (Typ): 43.6V Current - Peak Pulse (10/1000µs): 8.6A Applications: General Purpose Operating Temperature: -65°C ~ 150°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: T-18, Axial Packaging: Tape & Reel (TR) |
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APT47N65BC3G | Microsemi Corporation |
Description: MOSFET N-CH 650V 47A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Supplier Device Package: TO-247 [B] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V |
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| APT47N65SCS3G | Microsemi Corporation |
Description: MOSFET N-CH 650V 47A TO-247 Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Power Dissipation (Max): 417W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Packaging: Bulk |
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1N5230A (DO-35) | Microsemi Corporation |
Description: DIODE ZENER 4.7V 500MW DO35 Part Status: Active Supplier Device Package: DO-35 Impedance (Max) (Zzt): 19 Ohms Voltage - Zener (Nom) (Vz): 4.7 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±10% Packaging: Bulk Current - Reverse Leakage @ Vr: 50 µA @ 1.9 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 500 mW |
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1N5230B (DO-35) | Microsemi Corporation |
Description: DIODE ZENER 4.7V 500MW DO35 Current - Reverse Leakage @ Vr: 50 µA @ 2 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-35 Impedance (Max) (Zzt): 19 Ohms Voltage - Zener (Nom) (Vz): 4.7 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Bulk |
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1N5358/TR8 | Microsemi Corporation |
Description: DIODE ZENER 22V 5W T18 Packaging: Tape & Reel (TR) Tolerance: ±20% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: T-18 Part Status: Active Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 15.8 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
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1N4102 (DO35) | Microsemi Corporation |
Description: DIODE ZENER 8.7V 400MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 8.7 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-35 Part Status: Active Power - Max: 400 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 6.61 V |
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1N4702 (DO35) | Microsemi Corporation |
Description: DIODE ZENER 15V 500MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 15 V Supplier Device Package: DO-35 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 11.4 V |
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| 1N4437_FT | Microsemi Corporation |
Description: BRIDGE RECT 1PHASE 400V Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Diode Type: Single Phase Operating Temperature: -65°C ~ 160°C (TA) Technology: Standard Voltage - Peak Reverse (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
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| MDS60L | Microsemi Corporation |
Description: RF TRANS NPN 65V 1.09GHZ 55AW Part Status: Obsolete Supplier Device Package: 55AW Frequency - Transition: 1.03GHz ~ 1.09GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Voltage - Collector Emitter Breakdown (Max): 65V Current - Collector (Ic) (Max): 4A Power - Max: 120W Gain: 10dB Operating Temperature: 200°C (TJ) Transistor Type: NPN Mounting Type: Chassis Mount Package / Case: 55AW Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | |
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1.5KE130AE3/TR13 | Microsemi Corporation |
Description: TVS DIODE 111VWM 179VC CASE-1 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 8.4A Voltage - Reverse Standoff (Typ): 111V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 124V Voltage - Clamping (Max) @ Ipp: 179V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Obsolete |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. |
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MP5KE43AE3 | Microsemi Corporation |
Description: TVS DIODE 43VWM 69.4VC DO204AL Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Bulk Qualification: MIL-PRF-19500 Grade: Military Power Line Protection: No Power - Peak Pulse: 500W Voltage - Clamping (Max) @ Ipp: 69.4V Voltage - Breakdown (Min): 47.8V Unidirectional Channels: 1 Supplier Device Package: DO-204AL (DO-41) Voltage - Reverse Standoff (Typ): 43V Current - Peak Pulse (10/1000µs): 7.2A Applications: General Purpose Operating Temperature: -65°C ~ 150°C (TJ) Type: Zener |
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MAP5KE43A | Microsemi Corporation |
Description: TVS DIODE 43VWM 69.4VC DO204AL Part Status: Obsolete Power Line Protection: No Power - Peak Pulse: 500W Type: Zener Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Applications: General Purpose Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Clamping (Max) @ Ipp: 69.4V Voltage - Breakdown (Min): 47.8V Unidirectional Channels: 1 Supplier Device Package: DO-204AL (DO-41) Voltage - Reverse Standoff (Typ): 43V Current - Peak Pulse (10/1000µs): 7.2A Packaging: Bulk Grade: Military Qualification: MIL-PRF-19500 |
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MXLP5KE43Ae3 | Microsemi Corporation |
Description: TVS DIODE 43VWM 69.4VC DO204AL Grade: Military Power Line Protection: No Power - Peak Pulse: 500W Voltage - Clamping (Max) @ Ipp: 69.4V Voltage - Breakdown (Min): 47.8V Unidirectional Channels: 1 Supplier Device Package: DO-204AL (DO-41) Voltage - Reverse Standoff (Typ): 43V Current - Peak Pulse (10/1000µs): 7.2A Applications: General Purpose Operating Temperature: -65°C ~ 150°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Bulk Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. |
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1.5KE43AE3/TR13 | Microsemi Corporation |
Description: TVS DIODE 36.8VWM 59.3VC DO201 Power Line Protection: Yes Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 59.3V Voltage - Breakdown (Min): 40.9V Unidirectional Channels: 1 Supplier Device Package: CASE-1 Voltage - Reverse Standoff (Typ): 36.8V Current - Peak Pulse (10/1000µs): 25.3A Applications: General Purpose Operating Temperature: -55°C ~ 150°C Type: Zener Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. |
| LX2203AILD-TR | Microsemi Corporation |
Description: IC BATT CHG LI-ION 1CELL 10MLPD |
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| LX2203CLD | Microsemi Corporation |
Description: IC BATT CHG LI-ION 1CELL 10MLPD |
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| LX2203AILD | Microsemi Corporation |
Description: IC BATT CHG LI-ION 1CELL 10MLPD |
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| LX2203CLD-TR | Microsemi Corporation |
Description: IC BATT CHG LI-ION 1CELL 10MLPD |
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| MPT-36 | Microsemi Corporation |
Description: TVS DIODE 36VWM 54.3VC DO13 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPT-36C | Microsemi Corporation |
Description: TVS DIODE 36VWM 54.3VC DO13 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| JAN2N7236U | Microsemi Corporation |
Description: MOSFET P-CH 100V 18A TO267AB Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-267AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 4W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-267AB Packaging: Bulk |
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| JANTX2N7236U | Microsemi Corporation |
Description: MOSFET P-CH 100V 18A TO267AB Qualification: MIL-PRF-19500/595 Grade: Military Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-267AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 4W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-267AB Packaging: Bulk |
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| JAN2N7236 | Microsemi Corporation |
Description: MOSFET P-CH 100V 18A TO254AA Qualification: MIL-PRF-19500/595 Grade: Military Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA (Straight Leads) Packaging: Bulk Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-254AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 4W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V |
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| JANTXV2N7236U | Microsemi Corporation |
Description: MOSFET P-CH 100V 18A TO267AB Qualification: MIL-PRF-19500/595 Grade: Military Mounting Type: Surface Mount Package / Case: TO-267AB Packaging: Bulk Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-267AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 4W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
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| JANTX2N7236 | Microsemi Corporation |
Description: MOSFET P-CH 100V 18A TO254AA Qualification: MIL-PRF-19500/595 Grade: Military Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-254AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 4W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA (Straight Leads) Packaging: Bulk |
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| JANTXV2N7236 | Microsemi Corporation |
Description: MOSFET P-CH 100V 18A TO254AA Qualification: MIL-PRF-19500/595 Grade: Military Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-254AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 4W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA (Straight Leads) Packaging: Bulk |
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| 2N7236U | Microsemi Corporation |
Description: MOSFET P-CH 100V 18A TO267AB Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-267AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 4W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-267AB Packaging: Bulk |
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| 2N7236 | Microsemi Corporation |
Description: MOSFET P-CH 100V 18A TO254AA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-254AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 4W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA (Straight Leads) Packaging: Bulk |
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|
1N5236BDO35E3 | Microsemi Corporation |
Description: DIODE ZENER 7.5V 500MW DO35 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 3 µA @ 6 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 500 mW Part Status: Discontinued at Digi-Key Supplier Device Package: DO-35 Impedance (Max) (Zzt): 6 Ohms Voltage - Zener (Nom) (Vz): 7.5 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% |
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|
|
1N5236BDO35E3 | Microsemi Corporation |
Description: DIODE ZENER 7.5V 500MW DO35 Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 3 µA @ 6 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 500 mW Part Status: Discontinued at Digi-Key Supplier Device Package: DO-35 Impedance (Max) (Zzt): 6 Ohms Voltage - Zener (Nom) (Vz): 7.5 V |
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 |
1N5236A (DO-35) | Microsemi Corporation |
Description: DIODE ZENER 7.5V 500MW DO35 Current - Reverse Leakage @ Vr: 3 µA @ 5.7 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-204AH (DO-35) Impedance (Max) (Zzt): 6 Ohms Voltage - Zener (Nom) (Vz): 7.5 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±10% Packaging: Bulk |
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|
1N5236B (DO-35) | Microsemi Corporation |
Description: DIODE ZENER 7.5V 500MW DO35 Current - Reverse Leakage @ Vr: 3 µA @ 6 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Part Status: Active Supplier Device Package: DO-204AH (DO-35) Impedance (Max) (Zzt): 6 Ohms Voltage - Zener (Nom) (Vz): 7.5 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Bulk Power - Max: 500 mW |
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| JANTX2N2325AU4 | Microsemi Corporation |
Description: SCR 150V U4 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount SCR Type: Sensitive Gate Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 20 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz Current - On State (It (AV)) (Max): 1.6 A Voltage - Gate Trigger (Vgt) (Max): 600 mV Voltage - On State (Vtm) (Max): 2.2 V Current - Off State (Max): 10 µA Supplier Device Package: U4 Part Status: Obsolete Voltage - Off State: 150 V |
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| JANTXV2N2325A | Microsemi Corporation |
Description: SCR 150V TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole SCR Type: Sensitive Gate Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 20 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz Current - On State (It (AV)) (Max): 1.6 A Voltage - Gate Trigger (Vgt) (Max): 600 mV Voltage - On State (Vtm) (Max): 2.2 V Current - Off State (Max): 10 µA Supplier Device Package: TO-5 Part Status: Obsolete Voltage - Off State: 150 V |
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| JAN2N2325A | Microsemi Corporation |
Description: SCR 150V TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole SCR Type: Sensitive Gate Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 20 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz Current - On State (It (AV)) (Max): 1.6 A Voltage - Gate Trigger (Vgt) (Max): 600 mV Voltage - On State (Vtm) (Max): 2.2 V Current - Off State (Max): 10 µA Supplier Device Package: TO-5 Part Status: Obsolete Voltage - Off State: 150 V |
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| JAN2N2325AS | Microsemi Corporation |
Description: SCR 150V TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole SCR Type: Sensitive Gate Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 20 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz Current - On State (It (AV)) (Max): 1.6 A Voltage - Gate Trigger (Vgt) (Max): 600 mV Voltage - On State (Vtm) (Max): 2.2 V Current - Off State (Max): 10 µA Supplier Device Package: TO-5 Part Status: Obsolete Voltage - Off State: 150 V |
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| JANTX2N2325A | Microsemi Corporation |
Description: SCR 150V TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole SCR Type: Sensitive Gate Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 20 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz Current - On State (It (AV)) (Max): 1.6 A Voltage - Gate Trigger (Vgt) (Max): 600 mV Voltage - On State (Vtm) (Max): 2.2 V Current - Off State (Max): 10 µA Supplier Device Package: TO-5 Part Status: Obsolete Voltage - Off State: 150 V |
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| APTGT75A170D1G |
Виробник: Microsemi Corporation
Description: IGBT MODULE 1700V 120A 520W D1
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 520 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 120 A
IGBT Type: Trench Field Stop
Supplier Device Package: D1
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: D1
Packaging: Bulk
Description: IGBT MODULE 1700V 120A 520W D1
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 520 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 120 A
IGBT Type: Trench Field Stop
Supplier Device Package: D1
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: D1
Packaging: Bulk
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| APTGT75DA170D1G |
Виробник: Microsemi Corporation
Description: IGBT MODULE 1700V 120A 520W D1
Description: IGBT MODULE 1700V 120A 520W D1
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| APTGT25DA120D1G |
|
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 40A 140W D1
Description: IGBT MODULE 1200V 40A 140W D1
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| APTGT50A120D1G |
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 270W D1
Description: IGBT MODULE 1200V 75A 270W D1
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| 1.5KE250CAE3/TR13 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 214VWM 344VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: CASE-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 214VWM 344VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: CASE-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
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Мінімальне замовлення: 2000 шт
В кошику
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| SK310B/TR13 |
|
Виробник: Microsemi Corporation
Description: DIODE SCHOTTKY 100V 3A DO214AA
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 100V 3A DO214AA
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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| SK310BE3/TR13 |
|
Виробник: Microsemi Corporation
Description: DIODE SCHOTTKY 100V 3A SMB
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Description: DIODE SCHOTTKY 100V 3A SMB
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
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| SK310/TR13 |
Виробник: Microsemi Corporation
Description: DIODE SCHOTTKY 3A 100V SMCJ
Part Status: Active
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 3A 100V SMCJ
Part Status: Active
Packaging: Tape & Reel (TR)
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| SK310E3/TR13 |
Виробник: Microsemi Corporation
Description: DIODE SCHOTTKY 3A 100V SMCJ
Part Status: Active
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 3A 100V SMCJ
Part Status: Active
Packaging: Tape & Reel (TR)
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| MXPLAD30KP280A |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 280VWM 451VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 66A
Voltage - Reverse Standoff (Typ): 280V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 311V
Voltage - Clamping (Max) @ Ipp: 451V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 280VWM 451VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 66A
Voltage - Reverse Standoff (Typ): 280V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 311V
Voltage - Clamping (Max) @ Ipp: 451V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
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| MXPLAD30KP350Ae3 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 350VWM 564VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53A
Voltage - Reverse Standoff (Typ): 350V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 389V
Voltage - Clamping (Max) @ Ipp: 564V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 350VWM 564VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53A
Voltage - Reverse Standoff (Typ): 350V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 389V
Voltage - Clamping (Max) @ Ipp: 564V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
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| MXPLAD30KP300A |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 300VWM 483VC PLAD
Description: TVS DIODE 300VWM 483VC PLAD
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| MXPLAD30KP300Ae3 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 300VWM 483VC PLAD
Description: TVS DIODE 300VWM 483VC PLAD
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| MXPLAD30KP350A |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 350VWM 564VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53A
Voltage - Reverse Standoff (Typ): 350V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 389V
Voltage - Clamping (Max) @ Ipp: 564V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 350VWM 564VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53A
Voltage - Reverse Standoff (Typ): 350V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 389V
Voltage - Clamping (Max) @ Ipp: 564V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
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| MXPLAD30KP220A |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 220VWM 356VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 84A
Voltage - Reverse Standoff (Typ): 220V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 245V
Voltage - Clamping (Max) @ Ipp: 356V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 220VWM 356VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 84A
Voltage - Reverse Standoff (Typ): 220V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 245V
Voltage - Clamping (Max) @ Ipp: 356V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
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| MXPLAD30KP220Ae3 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 220VWM 356VC PLAD
Description: TVS DIODE 220VWM 356VC PLAD
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| MXPLAD30KP400Ae3 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 400VWM 644VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 46A
Voltage - Reverse Standoff (Typ): 400V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 444V
Voltage - Clamping (Max) @ Ipp: 644V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 400VWM 644VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 46A
Voltage - Reverse Standoff (Typ): 400V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 444V
Voltage - Clamping (Max) @ Ipp: 644V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| JANTX1N4480CUS |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 43V 1.5W D5A
Description: DIODE ZENER 43V 1.5W D5A
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Мінімальне замовлення: 100 шт
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| JANTX1N4488DUS |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 91V 1.5W D5A
Qualification: MIL-PRF-19500/406
Current - Reverse Leakage @ Vr: 250 nA @ 72.8 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Power - Max: 1.5 W
Grade: Military
Supplier Device Package: D-5A
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Tolerance: ±1%
Packaging: Bulk
Description: DIODE ZENER 91V 1.5W D5A
Qualification: MIL-PRF-19500/406
Current - Reverse Leakage @ Vr: 250 nA @ 72.8 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Power - Max: 1.5 W
Grade: Military
Supplier Device Package: D-5A
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Tolerance: ±1%
Packaging: Bulk
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Мінімальне замовлення: 100 шт
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| JANTX1N4485DUS |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 68V 1.5W D5A
Description: DIODE ZENER 68V 1.5W D5A
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| JANTX1N4481DUS |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 47V 1.5W D5A
Description: DIODE ZENER 47V 1.5W D5A
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
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| JANTX1N4482CUS |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 51V 1.5W D5A
Description: DIODE ZENER 51V 1.5W D5A
товару немає в наявності
Мінімальне замовлення: 100 шт
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| P6KE51AE3/TR13 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 43.6VWM 70.1VC AXIAL
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 70.1V
Voltage - Breakdown (Min): 48.5V
Unidirectional Channels: 1
Supplier Device Package: Axial
Voltage - Reverse Standoff (Typ): 43.6V
Current - Peak Pulse (10/1000µs): 8.6A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: T-18, Axial
Packaging: Tape & Reel (TR)
Description: TVS DIODE 43.6VWM 70.1VC AXIAL
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 70.1V
Voltage - Breakdown (Min): 48.5V
Unidirectional Channels: 1
Supplier Device Package: Axial
Voltage - Reverse Standoff (Typ): 43.6V
Current - Peak Pulse (10/1000µs): 8.6A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: T-18, Axial
Packaging: Tape & Reel (TR)
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| APT47N65BC3G |
Виробник: Microsemi Corporation
Description: MOSFET N-CH 650V 47A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
Description: MOSFET N-CH 650V 47A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
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| APT47N65SCS3G |
Виробник: Microsemi Corporation
Description: MOSFET N-CH 650V 47A TO-247
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Power Dissipation (Max): 417W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Bulk
Description: MOSFET N-CH 650V 47A TO-247
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Power Dissipation (Max): 417W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Bulk
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| 1N5230A (DO-35) |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 4.7V 500MW DO35
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 19 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±10%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50 µA @ 1.9 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Description: DIODE ZENER 4.7V 500MW DO35
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 19 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±10%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50 µA @ 1.9 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
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| 1N5230B (DO-35) |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 4.7V 500MW DO35
Current - Reverse Leakage @ Vr: 50 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 19 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Description: DIODE ZENER 4.7V 500MW DO35
Current - Reverse Leakage @ Vr: 50 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 19 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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| 1N5358/TR8 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 22V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 15.8 V
Description: DIODE ZENER 22V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 15.8 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
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| 1N4102 (DO35) |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 8.7V 400MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.61 V
Description: DIODE ZENER 8.7V 400MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.61 V
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| 1N4702 (DO35) |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 15V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.4 V
Description: DIODE ZENER 15V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.4 V
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| 1N4437_FT |
Виробник: Microsemi Corporation
Description: BRIDGE RECT 1PHASE 400V
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 160°C (TA)
Technology: Standard
Voltage - Peak Reverse (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 160°C (TA)
Technology: Standard
Voltage - Peak Reverse (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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| MDS60L |
|
Виробник: Microsemi Corporation
Description: RF TRANS NPN 65V 1.09GHZ 55AW
Part Status: Obsolete
Supplier Device Package: 55AW
Frequency - Transition: 1.03GHz ~ 1.09GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 4A
Power - Max: 120W
Gain: 10dB
Operating Temperature: 200°C (TJ)
Transistor Type: NPN
Mounting Type: Chassis Mount
Package / Case: 55AW
Packaging: Bulk
Description: RF TRANS NPN 65V 1.09GHZ 55AW
Part Status: Obsolete
Supplier Device Package: 55AW
Frequency - Transition: 1.03GHz ~ 1.09GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 4A
Power - Max: 120W
Gain: 10dB
Operating Temperature: 200°C (TJ)
Transistor Type: NPN
Mounting Type: Chassis Mount
Package / Case: 55AW
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| 1.5KE130AE3/TR13 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 111VWM 179VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.4A
Voltage - Reverse Standoff (Typ): 111V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 124V
Voltage - Clamping (Max) @ Ipp: 179V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 111VWM 179VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.4A
Voltage - Reverse Standoff (Typ): 111V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 124V
Voltage - Clamping (Max) @ Ipp: 179V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
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Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| MP5KE43AE3 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 43VWM 69.4VC DO204AL
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 69.4V
Voltage - Breakdown (Min): 47.8V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 43V
Current - Peak Pulse (10/1000µs): 7.2A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Description: TVS DIODE 43VWM 69.4VC DO204AL
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 69.4V
Voltage - Breakdown (Min): 47.8V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 43V
Current - Peak Pulse (10/1000µs): 7.2A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
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| MAP5KE43A |
Виробник: Microsemi Corporation
Description: TVS DIODE 43VWM 69.4VC DO204AL
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 500W
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Clamping (Max) @ Ipp: 69.4V
Voltage - Breakdown (Min): 47.8V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 43V
Current - Peak Pulse (10/1000µs): 7.2A
Packaging: Bulk
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 43VWM 69.4VC DO204AL
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 500W
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Clamping (Max) @ Ipp: 69.4V
Voltage - Breakdown (Min): 47.8V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 43V
Current - Peak Pulse (10/1000µs): 7.2A
Packaging: Bulk
Grade: Military
Qualification: MIL-PRF-19500
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| MXLP5KE43Ae3 |
Виробник: Microsemi Corporation
Description: TVS DIODE 43VWM 69.4VC DO204AL
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 69.4V
Voltage - Breakdown (Min): 47.8V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 43V
Current - Peak Pulse (10/1000µs): 7.2A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500
Description: TVS DIODE 43VWM 69.4VC DO204AL
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 69.4V
Voltage - Breakdown (Min): 47.8V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 43V
Current - Peak Pulse (10/1000µs): 7.2A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500
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| 1.5KE43AE3/TR13 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 36.8VWM 59.3VC DO201
Power Line Protection: Yes
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 59.3V
Voltage - Breakdown (Min): 40.9V
Unidirectional Channels: 1
Supplier Device Package: CASE-1
Voltage - Reverse Standoff (Typ): 36.8V
Current - Peak Pulse (10/1000µs): 25.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Description: TVS DIODE 36.8VWM 59.3VC DO201
Power Line Protection: Yes
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 59.3V
Voltage - Breakdown (Min): 40.9V
Unidirectional Channels: 1
Supplier Device Package: CASE-1
Voltage - Reverse Standoff (Typ): 36.8V
Current - Peak Pulse (10/1000µs): 25.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| LX2203AILD-TR |
|
Виробник: Microsemi Corporation
Description: IC BATT CHG LI-ION 1CELL 10MLPD
Description: IC BATT CHG LI-ION 1CELL 10MLPD
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| LX2203CLD |
|
Виробник: Microsemi Corporation
Description: IC BATT CHG LI-ION 1CELL 10MLPD
Description: IC BATT CHG LI-ION 1CELL 10MLPD
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| LX2203AILD |
|
Виробник: Microsemi Corporation
Description: IC BATT CHG LI-ION 1CELL 10MLPD
Description: IC BATT CHG LI-ION 1CELL 10MLPD
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| LX2203CLD-TR |
|
Виробник: Microsemi Corporation
Description: IC BATT CHG LI-ION 1CELL 10MLPD
Description: IC BATT CHG LI-ION 1CELL 10MLPD
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В кошику
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| MPT-36 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 36VWM 54.3VC DO13
Description: TVS DIODE 36VWM 54.3VC DO13
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| MPT-36C |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 36VWM 54.3VC DO13
Description: TVS DIODE 36VWM 54.3VC DO13
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
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| JAN2N7236U |
|
Виробник: Microsemi Corporation
Description: MOSFET P-CH 100V 18A TO267AB
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-267AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-267AB
Packaging: Bulk
Description: MOSFET P-CH 100V 18A TO267AB
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-267AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-267AB
Packaging: Bulk
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| JANTX2N7236U |
|
Виробник: Microsemi Corporation
Description: MOSFET P-CH 100V 18A TO267AB
Qualification: MIL-PRF-19500/595
Grade: Military
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-267AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-267AB
Packaging: Bulk
Description: MOSFET P-CH 100V 18A TO267AB
Qualification: MIL-PRF-19500/595
Grade: Military
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-267AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-267AB
Packaging: Bulk
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| JAN2N7236 |
|
Виробник: Microsemi Corporation
Description: MOSFET P-CH 100V 18A TO254AA
Qualification: MIL-PRF-19500/595
Grade: Military
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-254AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Description: MOSFET P-CH 100V 18A TO254AA
Qualification: MIL-PRF-19500/595
Grade: Military
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-254AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
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| JANTXV2N7236U |
|
Виробник: Microsemi Corporation
Description: MOSFET P-CH 100V 18A TO267AB
Qualification: MIL-PRF-19500/595
Grade: Military
Mounting Type: Surface Mount
Package / Case: TO-267AB
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-267AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET P-CH 100V 18A TO267AB
Qualification: MIL-PRF-19500/595
Grade: Military
Mounting Type: Surface Mount
Package / Case: TO-267AB
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-267AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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| JANTX2N7236 |
|
Виробник: Microsemi Corporation
Description: MOSFET P-CH 100V 18A TO254AA
Qualification: MIL-PRF-19500/595
Grade: Military
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-254AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Packaging: Bulk
Description: MOSFET P-CH 100V 18A TO254AA
Qualification: MIL-PRF-19500/595
Grade: Military
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-254AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Packaging: Bulk
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| JANTXV2N7236 |
|
Виробник: Microsemi Corporation
Description: MOSFET P-CH 100V 18A TO254AA
Qualification: MIL-PRF-19500/595
Grade: Military
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-254AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Packaging: Bulk
Description: MOSFET P-CH 100V 18A TO254AA
Qualification: MIL-PRF-19500/595
Grade: Military
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-254AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Packaging: Bulk
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| 2N7236U |
|
Виробник: Microsemi Corporation
Description: MOSFET P-CH 100V 18A TO267AB
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-267AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-267AB
Packaging: Bulk
Description: MOSFET P-CH 100V 18A TO267AB
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-267AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-267AB
Packaging: Bulk
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| 2N7236 |
|
Виробник: Microsemi Corporation
Description: MOSFET P-CH 100V 18A TO254AA
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-254AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Packaging: Bulk
Description: MOSFET P-CH 100V 18A TO254AA
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-254AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Packaging: Bulk
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| 1N5236BDO35E3 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Discontinued at Digi-Key
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Discontinued at Digi-Key
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
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| 1N5236BDO35E3 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 7.5V 500MW DO35
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Discontinued at Digi-Key
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Description: DIODE ZENER 7.5V 500MW DO35
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Discontinued at Digi-Key
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
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| 1N5236A (DO-35) |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 7.5V 500MW DO35
Current - Reverse Leakage @ Vr: 3 µA @ 5.7 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±10%
Packaging: Bulk
Description: DIODE ZENER 7.5V 500MW DO35
Current - Reverse Leakage @ Vr: 3 µA @ 5.7 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±10%
Packaging: Bulk
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| 1N5236B (DO-35) |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 7.5V 500MW DO35
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Power - Max: 500 mW
Description: DIODE ZENER 7.5V 500MW DO35
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Power - Max: 500 mW
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| JANTX2N2325AU4 |
Виробник: Microsemi Corporation
Description: SCR 150V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1.6 A
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 150 V
Description: SCR 150V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1.6 A
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 150 V
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| JANTXV2N2325A |
|
Виробник: Microsemi Corporation
Description: SCR 150V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1.6 A
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 150 V
Description: SCR 150V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1.6 A
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 150 V
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| JAN2N2325A |
|
Виробник: Microsemi Corporation
Description: SCR 150V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1.6 A
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 150 V
Description: SCR 150V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1.6 A
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 150 V
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| JAN2N2325AS |
|
Виробник: Microsemi Corporation
Description: SCR 150V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1.6 A
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 150 V
Description: SCR 150V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1.6 A
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 150 V
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| JANTX2N2325A |
|
Виробник: Microsemi Corporation
Description: SCR 150V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1.6 A
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 150 V
Description: SCR 150V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1.6 A
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 150 V
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